Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126690) > Сторінка 2112 з 2112
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| IM73A135V01XTSA1 | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||
| TLE4913HTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT Type of sensor: Hall Kind of sensor: omnipolar Case: SC59 Mounting: SMT Operating temperature: -40...85°C Supply voltage: 2.4...5.5V DC Range of detectable magnetic field: -5...5mT |
товару немає в наявності |
В кошику од. на суму грн. | |||
| TLE49613LHALA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall Type of sensor: Hall |
на замовлення 8000 шт: термін постачання 14-30 дні (днів) |
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| TLE49644MXTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; unipolar; SC59; SMT Type of sensor: Hall Kind of sensor: unipolar Case: SC59 Mounting: SMT |
на замовлення 2688000 шт: термін постачання 14-30 дні (днів) |
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| TLE4966V1KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; latch; TSOP6; SMT; Temp: -40÷150°C Type of sensor: Hall Kind of sensor: latch Case: TSOP6 Mounting: SMT Operating temperature: -40...150°C |
на замовлення 21000 шт: термін постачання 14-30 дні (днів) |
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| TLE4998C3XALA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; bipolar,unipolar; PG-SSO-3-10; THT; Temp: -40÷125°C Type of sensor: Hall Kind of sensor: bipolar; unipolar Case: PG-SSO-3-10 Mounting: THT Operating temperature: -40...125°C |
на замовлення 26000 шт: термін постачання 14-30 дні (днів) |
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TT425N16KOFHPSA3 | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 471A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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TT425N18KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 471A; BG-PB60AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 471A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||
| AIGB15N65F5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||
|
IRF8910TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8 Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO8 Mounting: SMD Polarisation: unipolar Drain current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
IPD65R225C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 11A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.225Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||
|
IPD65R420CFDBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3 Power dissipation: 83.3W Polarisation: unipolar Technology: CoolMOS™ Drain current: 8.7A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.42Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
| IPD65R400CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252 Pulsed drain current: 30A Power dissipation: 118W Polarisation: unipolar Technology: CoolMOS™ CE Drain current: 9.5A Kind of channel: enhancement Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252 On-state resistance: 0.4Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||
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IPD65R1K4CFDBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3 Power dissipation: 28.4W Polarisation: unipolar Technology: CoolMOS™ Drain current: 2.8A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 1.4Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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IPD65R250E6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3 Power dissipation: 208W Polarisation: unipolar Technology: CoolMOS™ Drain current: 16.1A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.25Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
| IPD65R420CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||
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IPD65R420CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3 Power dissipation: 83.3W Polarisation: unipolar Technology: CoolMOS™ Drain current: 8.7A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.42Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
| IPD65R420CFDATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||
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IPD65R600C6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.6Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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IPD65R600E6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.6Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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IPD65R600E6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7.3A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.6Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
IPD65R650CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252 Power dissipation: 86W Gate charge: 23nC Polarisation: unipolar Drain current: 10.1A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Case: DPAK; TO252 On-state resistance: 0.54Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||
| IPD65R660CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||
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IPD65R660CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3 Power dissipation: 62.5W Polarisation: unipolar Technology: CoolMOS™ Drain current: 6A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.66Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
IPD65R660CFDATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK Power dissipation: 63W Gate charge: 22nC Technology: CoolMOS™ Drain current: 6A Kind of channel: enhancement Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||
|
IPD65R660CFDBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3 Power dissipation: 62.5W Polarisation: unipolar Technology: CoolMOS™ Drain current: 6A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.66Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
IPD65R950CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Power dissipation: 36.7W Polarisation: unipolar Technology: CoolMOS™ Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.95Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
IPD65R950CFDATMA2 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK Power dissipation: 36.7W Gate charge: 14.1nC Technology: CoolMOS™ Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||
|
IPD65R950CFDBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Power dissipation: 36.7W Polarisation: unipolar Technology: CoolMOS™ Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 0.95Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
| IPF013N04NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7 Type of transistor: N-MOSFET Technology: StrongIRFET™ 2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 239A Pulsed drain current: 956A Power dissipation: 231W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IM73A135V01XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TLE4913HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Type of sensor: Hall
Kind of sensor: omnipolar
Case: SC59
Mounting: SMT
Operating temperature: -40...85°C
Supply voltage: 2.4...5.5V DC
Range of detectable magnetic field: -5...5mT
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Type of sensor: Hall
Kind of sensor: omnipolar
Case: SC59
Mounting: SMT
Operating temperature: -40...85°C
Supply voltage: 2.4...5.5V DC
Range of detectable magnetic field: -5...5mT
товару немає в наявності
В кошику
од. на суму грн.
| TLE49613LHALA1 |
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на замовлення 8000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 41.11 грн |
| TLE49644MXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Mounting: SMT
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Mounting: SMT
на замовлення 2688000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6000+ | 11.42 грн |
| TLE4966V1KHTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; TSOP6; SMT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: TSOP6
Mounting: SMT
Operating temperature: -40...150°C
Category: Hall Sensors
Description: Sensor: Hall; latch; TSOP6; SMT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: TSOP6
Mounting: SMT
Operating temperature: -40...150°C
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 42.39 грн |
| TLE4998C3XALA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar,unipolar; PG-SSO-3-10; THT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: bipolar; unipolar
Case: PG-SSO-3-10
Mounting: THT
Operating temperature: -40...125°C
Category: Hall Sensors
Description: Sensor: Hall; bipolar,unipolar; PG-SSO-3-10; THT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: bipolar; unipolar
Case: PG-SSO-3-10
Mounting: THT
Operating temperature: -40...125°C
на замовлення 26000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 182.73 грн |
| TT425N16KOFHPSA3 |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 471A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 471A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 34125.31 грн |
| TT425N18KOFHPSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 471A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 471A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 471A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 471A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| AIGB15N65F5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRF8910TRPBFXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R225C7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.225Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.225Ω
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R420CFDBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.42Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.42Ω
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R400CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Pulsed drain current: 30A
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252
On-state resistance: 0.4Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Pulsed drain current: 30A
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252
On-state resistance: 0.4Ω
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R1K4CFDBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 1.4Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 2.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 1.4Ω
Mounting: SMD
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| IPD65R250E6XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 16.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.25Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 16.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.25Ω
Mounting: SMD
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| IPD65R420CFDAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R420CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.42Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.42Ω
Mounting: SMD
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В кошику
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| IPD65R420CFDATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R600C6BTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
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| IPD65R600E6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
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В кошику
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| IPD65R600E6BTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.6Ω
Mounting: SMD
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од. на суму грн.
| IPD65R650CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Power dissipation: 86W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 10.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 0.54Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Power dissipation: 86W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 10.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Case: DPAK; TO252
On-state resistance: 0.54Ω
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
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| IPD65R660CFDATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK
Power dissipation: 63W
Gate charge: 22nC
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 700V; 6A; 63W; DPAK
Power dissipation: 63W
Gate charge: 22nC
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R660CFDBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.66Ω
Mounting: SMD
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В кошику
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| IPD65R950CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
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| IPD65R950CFDATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK
Power dissipation: 36.7W
Gate charge: 14.1nC
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK
Power dissipation: 36.7W
Gate charge: 14.1nC
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD65R950CFDBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252-3
On-state resistance: 0.95Ω
Mounting: SMD
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| IPF013N04NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 239A
Pulsed drain current: 956A
Power dissipation: 231W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 239A
Pulsed drain current: 956A
Power dissipation: 231W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.






