Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119471) > Сторінка 1985 з 1992
| Фото | Назва | Виробник | Інформація |
Доступність |
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BSS806NEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.5W Case: SOT23 Mounting: SMD Technology: OptiMOS™ 2 Gate-source voltage: ±8V On-state resistance: 82mΩ Drain current: 2.3A Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 3732 шт: термін постачання 14-30 дні (днів) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.5W Case: SOT23 Mounting: SMD Technology: OptiMOS™ 2 Gate-source voltage: ±8V On-state resistance: 82mΩ Drain current: 2.3A Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 5413 шт: термін постачання 14-30 дні (днів) |
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BC858BE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PVD1352NPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 550mA On-state resistance: 1.5Ω Mounting: THT Case: DIP8 Body dimensions: 9.39x6.47x4.57mm Leads: for PCB Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 841 шт: термін постачання 14-30 дні (днів) |
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BCR108SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 170MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
на замовлення 1121 шт: термін постачання 14-30 дні (днів) |
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| IPDD60R080G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A Mounting: SMD Case: PG-HDSOP-10-1 On-state resistance: 80mΩ Gate-source voltage: ±20V Drain current: 29A Pulsed drain current: 83A Power dissipation: 174W Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRFU5305PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK Mounting: THT Case: IPAK Kind of channel: enhancement Technology: HEXFET® Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W |
на замовлення 925 шт: термін постачання 14-30 дні (днів) |
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IGCM10F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -10...10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 26.1W |
на замовлення 228 шт: термін постачання 14-30 дні (днів) |
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IPP65R225C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Polarisation: unipolar On-state resistance: 0.225Ω Drain current: 11A Gate-source voltage: ±20V Power dissipation: 63W Drain-source voltage: 650V Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTS6142D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5 Kind of integrated circuit: high-side Mounting: SMD Technology: High Current PROFET Kind of output: N-Channel Type of integrated circuit: power switch Case: TO252-5 On-state resistance: 10mΩ Number of channels: 1 Output current: 7A Supply voltage: 5.5...38V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SPD15P10PGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Mounting: SMD Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.24Ω Gate-source voltage: ±20V Power dissipation: 128W Technology: SIPMOS™ Kind of channel: enhancement Case: PG-TO252-3 Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLE4264GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: PG-SOT223-4 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...150°C Output current: 0.16A Voltage drop: 0.25V Number of channels: 1 Tolerance: ±2% Output voltage: 5V Input voltage: 5.5...45V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IPP011N04NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 201A Power dissipation: 375W Case: TO220-3 On-state resistance: 1.15mΩ Mounting: THT Gate charge: 0.21µC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IDH10G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 44A Leakage current: 77µA Power dissipation: 72W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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IDH10G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 71A Leakage current: 2µA Power dissipation: 89W Kind of package: tube Heatsink thickness: 1.17...137mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTS70302EPAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Output current: 4.5A Case: PG-TSDSO-14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Number of channels: 2 Kind of integrated circuit: high-side Kind of output: N-Channel Technology: PROFET™+2 On-state resistance: 25mΩ Supply voltage: 4.1...28V DC |
на замовлення 2965 шт: термін постачання 14-30 дні (днів) |
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BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8 Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Case: PG-DSO-8 Polarisation: unipolar On-state resistance: 22mΩ Power dissipation: 1.56W Drain current: 7.7A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2440 шт: термін постачання 14-30 дні (днів) |
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| CY8C4248LQI-BL583 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: QFN36 Operating temperature: -40...85°C Memory: 32kB SRAM; 256kB FLASH Bluetooth version: 4.2 Clock frequency: 48MHz Kind of core: 32-bit Interface: I2C; SPI; UART Integrated circuit features: watchdog Supply voltage: 1.9...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SPP18P06PHXKSA1 | INFINEON TECHNOLOGIES |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3 Case: PG-TO220-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.7A On-state resistance: 0.13Ω Gate-source voltage: ±20V Power dissipation: 81.1W Kind of channel: enhancement |
на замовлення 558 шт: термін постачання 14-30 дні (днів) |
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| S25FL064LABBHV030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating frequency: 108MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S26KS512SDABHV030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 100MHz Operating voltage: 1.7...1.95V Case: FBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S28HL01GTFPBHV030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: octal Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating frequency: 166MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S29GL064S80BHV030 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRF7815TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 5.1A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BFR380L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1 Mounting: SMD Frequency: 14GHz Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Kind of transistor: RF Case: TSLP-3-1 Collector current: 80mA Power dissipation: 0.38W Collector-emitter voltage: 15V |
на замовлення 11825 шт: термін постачання 14-30 дні (днів) |
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BFR193L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1 Mounting: SMD Frequency: 8GHz Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Kind of transistor: RF Case: TSLP-3-1 Collector current: 80mA Power dissipation: 0.58W Collector-emitter voltage: 20V |
на замовлення 751 шт: термін постачання 14-30 дні (днів) |
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| BTS500851TMBAKSA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-11 On-state resistance: 7.2mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -290mA Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 2.2Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| IPB65R110CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: D2PAK; TO263 On-state resistance: 99mΩ Mounting: SMD Gate charge: 118nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IPB65R110CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XC8888FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTS70041EPPXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 220µs Turn-on time: 210µs On-state resistance: 8mΩ Number of channels: 1 Output current: 15A Supply voltage: 4.1...28V DC Technology: PROFET™+ 12V Case: SO14-W Kind of integrated circuit: high-side |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
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BTS5090-1EJA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8 Mounting: SMD Kind of output: N-Channel Type of integrated circuit: power switch On-state resistance: 90mΩ Number of channels: 1 Output current: 3A Supply voltage: 13.5V DC Technology: PROFET™+ 12V Case: DSO8 Kind of integrated circuit: high-side |
на замовлення 1775 шт: термін постачання 14-30 дні (днів) |
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BTS3050EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 210µs Turn-on time: 115µs On-state resistance: 0.1Ω Number of channels: 1 Output current: 4A Output voltage: 40V Technology: HITFET® Case: SO8-EP Kind of integrated circuit: low-side |
на замовлення 2795 шт: термін постачання 14-30 дні (днів) |
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BTS5012SDA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Mounting: SMD Kind of output: N-Channel Type of integrated circuit: power switch On-state resistance: 12mΩ Number of channels: 1 Output current: 6A Supply voltage: 5.5...20V DC Technology: High Current PROFET Case: TO252-5 Kind of integrated circuit: high-side |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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BTS3035TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3 Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 210µs Turn-on time: 115µs On-state resistance: 70mΩ Number of channels: 1 Output current: 5A Output voltage: 40V Technology: HITFET® Case: PG-TO252-3 Kind of integrated circuit: low-side |
на замовлення 1071 шт: термін постачання 14-30 дні (днів) |
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BTS3035EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 210µs Turn-on time: 115µs On-state resistance: 70mΩ Number of channels: 1 Output current: 5A Output voltage: 40V Technology: HITFET® Case: SO8-EP Kind of integrated circuit: low-side |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
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BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC010N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCR320UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 0.25A Number of channels: 1 Mounting: SMD Operating voltage: 0...25V DC Topology: single transistor |
на замовлення 759 шт: термін постачання 14-30 дні (днів) |
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| BCR321UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 0.25A Number of channels: 1 Mounting: SMD Operating voltage: 0...4.5V DC Topology: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
на замовлення 1495 шт: термін постачання 14-30 дні (днів) |
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IPW60R031CFD7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhancement |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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IPW60R037P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 255W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 164 шт: термін постачання 14-30 дні (днів) |
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| IPW60R037CSFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 245W Case: TO247-3 On-state resistance: 37mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCV46E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 200MHz Kind of transistor: Darlington |
на замовлення 8740 шт: термін постачання 14-30 дні (днів) |
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BCR112E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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BCV61BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143 Mounting: SMD Case: SOT143 Collector current: 0.1A Power dissipation: 0.3W Type of transistor: NPN x2 Collector-emitter voltage: 30V Polarisation: bipolar Frequency: 250MHz |
на замовлення 928 шт: термін постачання 14-30 дні (днів) |
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BCR505E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
на замовлення 5972 шт: термін постачання 14-30 дні (днів) |
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BCR135E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
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BCR185E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 1615 шт: термін постачання 14-30 дні (днів) |
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BCX71KE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 11042 шт: термін постачання 14-30 дні (днів) |
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BCR148E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 135 шт: термін постачання 14-30 дні (днів) |
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BCR533E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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BCR158E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX70HE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 1050 шт: термін постачання 14-30 дні (днів) |
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BCX71HE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 2380 шт: термін постачання 14-30 дні (днів) |
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BCR503E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 3310 шт: термін постачання 14-30 дні (днів) |
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BC847SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 250MHz |
на замовлення 1281 шт: термін постачання 14-30 дні (днів) |
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BCX71GE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 2720 шт: термін постачання 14-30 дні (днів) |
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| BSS806NEH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 3732 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.54 грн |
| 29+ | 14.58 грн |
| 50+ | 10.35 грн |
| 100+ | 8.97 грн |
| 500+ | 6.64 грн |
| 1000+ | 5.78 грн |
| 3000+ | 4.77 грн |
| BSS806NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 5413 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.72 грн |
| 24+ | 17.75 грн |
| 50+ | 12.40 грн |
| 100+ | 10.56 грн |
| 500+ | 7.41 грн |
| 1000+ | 6.45 грн |
| 3000+ | 5.21 грн |
| BC858BE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| PVD1352NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 841 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 225.24 грн |
| 150+ | 187.49 грн |
| BCR108SH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 1121 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.56 грн |
| 47+ | 9.00 грн |
| 54+ | 7.83 грн |
| 100+ | 7.08 грн |
| 500+ | 5.83 грн |
| 600+ | 5.75 грн |
| 1000+ | 5.17 грн |
| IPDD60R080G7XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Mounting: SMD
Case: PG-HDSOP-10-1
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Mounting: SMD
Case: PG-HDSOP-10-1
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
товару немає в наявності
В кошику
од. на суму грн.
| IRFU5305PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
на замовлення 925 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.66 грн |
| 10+ | 48.41 грн |
| 75+ | 39.58 грн |
| 150+ | 38.16 грн |
| 525+ | 35.91 грн |
| IGCM10F60GAXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
на замовлення 228 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 682.01 грн |
| 3+ | 571.63 грн |
| 5+ | 531.64 грн |
| 10+ | 478.31 грн |
| IPP65R225C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| BTS6142D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Kind of integrated circuit: high-side
Mounting: SMD
Technology: High Current PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-5
On-state resistance: 10mΩ
Number of channels: 1
Output current: 7A
Supply voltage: 5.5...38V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Kind of integrated circuit: high-side
Mounting: SMD
Technology: High Current PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-5
On-state resistance: 10mΩ
Number of channels: 1
Output current: 7A
Supply voltage: 5.5...38V DC
товару немає в наявності
В кошику
од. на суму грн.
| SPD15P10PGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| TLE4264GHTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
товару немає в наявності
В кошику
од. на суму грн.
| IPP011N04NF2SAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
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| IDH10G65C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
на замовлення 39 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.99 грн |
| IDH10G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: tube
Heatsink thickness: 1.17...137mm
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| BTS70302EPAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 108.58 грн |
| 10+ | 95.83 грн |
| 25+ | 94.99 грн |
| BSO220N03MDGXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-DSO-8
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.56W
Drain current: 7.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-DSO-8
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.56W
Drain current: 7.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.10 грн |
| 8+ | 52.33 грн |
| 10+ | 44.58 грн |
| 25+ | 34.83 грн |
| 50+ | 29.16 грн |
| 100+ | 25.17 грн |
| 250+ | 23.42 грн |
| CY8C4248LQI-BL583 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
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| SPP18P06PHXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
на замовлення 558 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.50 грн |
| 5+ | 94.99 грн |
| 10+ | 85.00 грн |
| 25+ | 73.33 грн |
| 50+ | 65.83 грн |
| 100+ | 59.16 грн |
| 500+ | 48.33 грн |
| S25FL064LABBHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
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| S26KS512SDABHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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| S28HL01GTFPBHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 166MHz
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| S29GL064S80BHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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| IRF7815TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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| BFR380L3E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Frequency: 14GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Frequency: 14GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
на замовлення 11825 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.38 грн |
| 97+ | 4.33 грн |
| 101+ | 4.13 грн |
| 500+ | 3.93 грн |
| 1000+ | 3.80 грн |
| 2500+ | 3.62 грн |
| BFR193L3E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 20V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 20V
на замовлення 751 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.43 грн |
| 33+ | 12.83 грн |
| BTS500851TMBAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
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| BSR316PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
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| IPB65R110CFDAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
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| IPB65R110CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
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| XC8888FFI5VACFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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| BTS70041EPPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 220µs
Turn-on time: 210µs
On-state resistance: 8mΩ
Number of channels: 1
Output current: 15A
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Case: SO14-W
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 220µs
Turn-on time: 210µs
On-state resistance: 8mΩ
Number of channels: 1
Output current: 15A
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Case: SO14-W
Kind of integrated circuit: high-side
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.94 грн |
| 10+ | 107.49 грн |
| 25+ | 99.99 грн |
| 50+ | 94.99 грн |
| BTS5090-1EJA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
на замовлення 1775 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.20 грн |
| 10+ | 104.16 грн |
| 25+ | 92.49 грн |
| 100+ | 77.50 грн |
| 250+ | 70.00 грн |
| 500+ | 64.16 грн |
| 1000+ | 62.50 грн |
| BTS3050EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
на замовлення 2795 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.12 грн |
| 6+ | 79.16 грн |
| 25+ | 65.83 грн |
| 100+ | 59.16 грн |
| 250+ | 55.00 грн |
| 500+ | 52.50 грн |
| 1000+ | 47.50 грн |
| BTS5012SDA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 12mΩ
Number of channels: 1
Output current: 6A
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 12mΩ
Number of channels: 1
Output current: 6A
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
на замовлення 990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 175.89 грн |
| 10+ | 128.33 грн |
| BTS3035TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: PG-TO252-3
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: PG-TO252-3
Kind of integrated circuit: low-side
на замовлення 1071 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.45 грн |
| 5+ | 100.83 грн |
| 10+ | 94.16 грн |
| 25+ | 84.16 грн |
| 100+ | 73.33 грн |
| 250+ | 67.50 грн |
| 500+ | 62.50 грн |
| 1000+ | 61.66 грн |
| BTS3035EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.99 грн |
| 25+ | 75.83 грн |
| 100+ | 68.33 грн |
| 250+ | 63.33 грн |
| 500+ | 60.00 грн |
| 1000+ | 54.16 грн |
| BSC010N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BSC010N04LSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BCR320UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...25V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...25V DC
Topology: single transistor
на замовлення 759 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.08 грн |
| BCR321UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
товару немає в наявності
В кошику
од. на суму грн.
| SN7002NH6327XTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 1495 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.05 грн |
| 36+ | 11.75 грн |
| 53+ | 7.88 грн |
| 100+ | 6.58 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.82 грн |
| IPW60R031CFD7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 595.86 грн |
| 3+ | 509.97 грн |
| 10+ | 478.31 грн |
| IPW60R037P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 164 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 557.28 грн |
| 2+ | 489.97 грн |
| 5+ | 432.47 грн |
| 10+ | 406.64 грн |
| IPW60R037CSFDXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BCV46E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
на замовлення 8740 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.95 грн |
| 34+ | 12.42 грн |
| 100+ | 9.17 грн |
| 250+ | 8.14 грн |
| 1000+ | 6.69 грн |
| 3000+ | 5.72 грн |
| BCR112E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 20 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.43 грн |
| BCV61BE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
на замовлення 928 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.51 грн |
| 25+ | 16.83 грн |
| 100+ | 12.50 грн |
| 250+ | 11.00 грн |
| 500+ | 10.00 грн |
| BCR505E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 5972 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.43 грн |
| 26+ | 16.50 грн |
| 29+ | 14.67 грн |
| 100+ | 9.50 грн |
| 250+ | 7.92 грн |
| 500+ | 6.83 грн |
| 1000+ | 6.17 грн |
| 3000+ | 5.83 грн |
| BCR135E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 372 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.67 грн |
| 53+ | 7.92 грн |
| 100+ | 5.24 грн |
| BCR185E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1615 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.18 грн |
| 91+ | 4.60 грн |
| 111+ | 3.77 грн |
| 250+ | 3.33 грн |
| 500+ | 3.05 грн |
| 1000+ | 2.77 грн |
| BCX71KE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 11042 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 95+ | 4.74 грн |
| 106+ | 3.95 грн |
| 250+ | 3.49 грн |
| 1000+ | 3.02 грн |
| 3000+ | 2.97 грн |
| BCR148E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 135 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.67 грн |
| 100+ | 4.75 грн |
| BCR533E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.17 грн |
| BCR158E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 10 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| BCX70HE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1050 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.52 грн |
| 111+ | 3.78 грн |
| 250+ | 3.34 грн |
| 1000+ | 2.91 грн |
| BCX71HE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 2380 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 7.54 грн |
| 160+ | 2.63 грн |
| 180+ | 2.37 грн |
| 500+ | 2.09 грн |
| BCR503E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 3310 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.23 грн |
| 25+ | 17.17 грн |
| 30+ | 14.25 грн |
| 100+ | 7.47 грн |
| 250+ | 6.08 грн |
| 500+ | 5.37 грн |
| 1000+ | 4.84 грн |
| 1300+ | 4.67 грн |
| 3000+ | 4.28 грн |
| BC847SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 1281 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.36 грн |
| 55+ | 7.67 грн |
| 72+ | 5.83 грн |
| 100+ | 5.17 грн |
| 500+ | 4.50 грн |
| BCX71GE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 2720 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 98+ | 4.59 грн |
| 109+ | 3.84 грн |
| 250+ | 3.40 грн |
| 1000+ | 2.96 грн |






















