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CY8C4125AZI-483 CY8C4125AZI-483 Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+312.54 грн
10+227.65 грн
25+209.41 грн
100+177.69 грн
250+168.71 грн
500+163.30 грн
1000+156.24 грн
2500+151.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CYPD1134-40LQXI CYPD1134-40LQXI Infineon Technologies Infineon-CCG1_USB_Type-C_Port_Controller_with_Power_Delivery-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecca41046df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYPD2103-14LHXIT CYPD2103-14LHXIT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 14DFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 14-DFN-EP (2.5x3.5)
Part Status: Active
Number of I/O: 7
DigiKey Programmable: Not Verified
на замовлення 3444 шт:
термін постачання 21-31 дні (днів)
3+120.08 грн
10+84.71 грн
25+76.99 грн
100+64.25 грн
250+60.43 грн
500+58.13 грн
1000+55.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYPD2105-20FNXIT CYPD2105-20FNXIT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 20-WLCSP (1.63x2.03)
Part Status: Active
Number of I/O: 9
DigiKey Programmable: Not Verified
на замовлення 3934 шт:
термін постачання 21-31 дні (днів)
3+141.37 грн
10+100.21 грн
25+91.22 грн
100+76.36 грн
250+71.95 грн
500+69.29 грн
1000+66.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C1061G30-10BV1XI CY7C1061G30-10BV1XI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
1+2046.39 грн
10+1824.55 грн
25+1766.54 грн
50+1617.01 грн
100+1576.64 грн
В кошику  од. на суму  грн.
CY7C1061G30-10BVJXI CY7C1061G30-10BVJXI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1513.29 грн
10+1348.59 грн
25+1305.70 грн
50+1195.18 грн
100+1165.36 грн
В кошику  од. на суму  грн.
CY7C1061GN30-10ZSXI CY7C1061GN30-10ZSXI Infineon Technologies CY7C1061GN30.pdf Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
1+1720.23 грн
10+1532.85 грн
25+1483.94 грн
50+1358.22 грн
108+1320.49 грн
324+1290.29 грн
В кошику  од. на суму  грн.
PTMA080152MV1R500AUMA1 PTMA080152MV1R500AUMA1 Infineon Technologies dgdl?fileId=db3a3043327f13e301328dad0bf80abe Description: IC AMP RF LDMOS 15W DSO-20
товару немає в наявності
В кошику  од. на суму  грн.
IFX1763XEJVXUMA1 IFX1763XEJVXUMA1 Infineon Technologies Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
товару немає в наявності
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IPB60R190P6ATMA1 IPB60R190P6ATMA1 Infineon Technologies IPx60R190P6.pdf Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R380P6ATMA1 IPB60R380P6ATMA1 Infineon Technologies IPx60R380P6.pdf Description: MOSFET N-CH 600V 10.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE5009E1000FUMA1 TLE5009E1000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
2+205.24 грн
5+175.98 грн
10+168.11 грн
25+148.84 грн
50+142.76 грн
100+137.20 грн
500+123.92 грн
1000+119.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE5009E2000FUMA1 TLE5009E2000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
3+169.47 грн
5+145.31 грн
10+138.59 грн
25+122.52 грн
50+117.41 грн
100+112.71 грн
500+101.58 грн
1000+98.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IFX1763XEJVXUMA1 IFX1763XEJVXUMA1 Infineon Technologies Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
товару немає в наявності
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IFX54441EJVXUMA1 IFX54441EJVXUMA1 Infineon Technologies INFNS30254-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R190P6ATMA1 IPB60R190P6ATMA1 Infineon Technologies IPx60R190P6.pdf Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
товару немає в наявності
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IPB60R380P6ATMA1 IPB60R380P6ATMA1 Infineon Technologies IPx60R380P6.pdf Description: MOSFET N-CH 600V 10.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE5009E1000FUMA1 TLE5009E1000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE5009E2000FUMA1 TLE5009E2000FUMA1 Infineon Technologies Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+89.88 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLI5012BE1000XUMA1 TLI5012BE1000XUMA1 Infineon Technologies Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8 Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE4241GMXUMA1 TLE4241GMXUMA1 Infineon Technologies Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
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TLE4253EXUMA2 TLE4253EXUMA2 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+56.00 грн
5000+52.72 грн
7500+52.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IR7184SPBF IR7184SPBF Infineon Technologies ir7184s.pdf?fileId=5546d462533600a4015355d62230182c Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR7184STRPBF IR7184STRPBF Infineon Technologies ir7184s.pdf?fileId=5546d462533600a4015355d62230182c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRF7780MTRPBF IRF7780MTRPBF Infineon Technologies irf7780mpbf.pdf?fileId=5546d462533600a401535607b41f1cba Description: MOSFET N-CH 75V 89A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 53A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6504 pF @ 25 V
товару немає в наявності
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IRL40B209 IRL40B209 Infineon Technologies Infineon-IRL40B209-DS-v02_00-EN.pdf?fileId=5546d46256fb43b301576b16f39706f5 Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15140 pF @ 25 V
товару немає в наявності
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IRL40B212 IRL40B212 Infineon Technologies Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
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IRL40B215 IRL40B215 Infineon Technologies Infineon-IRL40B215-DS-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5a5945a3335f Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
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IRL60B216 IRL60B216 Infineon Technologies irl60b216.pdf Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
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IRMCK188TR Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR CONTROLLER
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IRMCK188TY Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR CONTROLLER
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IPB117N20NFDATMA1 IPB117N20NFDATMA1 Infineon Technologies DS_IPB117N20NFD_2_0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043440adf7501440c8377500152 Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+234.79 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ICE1PCS01GFUMA1 ICE1PCS01GFUMA1 Infineon Technologies Infineon-ICE1PCS01-DS-v01_03-en.pdf?fileId=db3a304412b407950112b427c6f13cc7 Description: IC PFC CTRLR CCM 133KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.2V ~ 21V
Frequency - Switching: 133kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 100 µA
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ICE1PCS02GXUMA1 Infineon Technologies Infineon-ICE1PCS02-DS-v01_02-en.pdf?fileId=db3a304412b407950112b427c9283ccb Description: IC PFC CTLR CCM 8DSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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ICE2PCS02XKLA1 ICE2PCS02XKLA1 Infineon Technologies Infineon-ICE2PCS02-DS-v02_04-en.pdf?fileId=db3a304412b407950112b427cc3c3cdc Description: IC PFC CTRLR CCM 65KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
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ICE2QS03XKLA1 ICE2QS03XKLA1 Infineon Technologies dgdl?fileId=db3a304325305e6d012566b50ebd7070 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
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ICE3B0565JFKLA1 ICE3B0565JFKLA1 Infineon Technologies Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 25 W
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TCA355GGEGXUMA1 Infineon Technologies Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a Description: IC PROXIMITY SWITCH 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Proximity Only
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 5V ~ 30V
Current - Supply: 600µA
Number of Inputs: 1
Supplier Device Package: PG-DSO-8
Proximity Detection: Yes
DigiKey Programmable: Not Verified
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TCA355GXLLA1 Infineon Technologies Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a Description: IC PROXIMITY SWITCH 8DSOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Proximity Only
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 5V ~ 30V
Current - Supply: 600µA
Number of Inputs: 1
Supplier Device Package: PG-DSO-8
Proximity Detection: Yes
DigiKey Programmable: Not Verified
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TLE82612EXUMA2 Infineon Technologies TLE8261-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE82622EXUMA2 Infineon Technologies TLE8262-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8261EXUMA2 Infineon Technologies TLE8261E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8262EXUMA2 Infineon Technologies TLE8262E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE82632EXUMA2 Infineon Technologies TLE8263-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8263EXUMA2 Infineon Technologies Infineon-TLE8263E-DS-v01_00-en.pdf?fileId=db3a304320d39d59012186d0e69429fc&ack=t Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8264EXUMA2 Infineon Technologies TLE8264E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
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IPP50R140CPXKSA1 IPP50R140CPXKSA1 Infineon Technologies Infineon-IPP50R140CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123850733ed65ab Description: MOSFET N-CH 550V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
2+327.01 грн
50+162.50 грн
100+147.73 грн
Мінімальне замовлення: 2
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IRL40S212 IRL40S212 Infineon Technologies Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
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IPD60R600CPATMA1 IPD60R600CPATMA1 Infineon Technologies Infineon-IPD60R600CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012385657d1567e3 Description: MOSFET N-CH 600V 6.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
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IPP06CN10NGXKSA1 IPP06CN10NGXKSA1 Infineon Technologies IP(B,I,P)06CN10N_G.pdf Description: MOSFET N-CH 100V 100A TO220-3
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IPP12CN10NGXKSA1 IPP12CN10NGXKSA1 Infineon Technologies dgdl?fileId=db3a304412b407950112b42c236e467c Description: MOSFET N-CH 100V 67A TO220-3
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IPP35CN10NGXKSA1 IPP35CN10NGXKSA1 Infineon Technologies dgdl?fileId=db3a304412b407950112b42b457b44b1 Description: MOSFET N-CH 100V 27A TO220-3
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IPI075N15N3GXKSA1 IPI075N15N3GXKSA1 Infineon Technologies Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad Description: MOSFET N-CH 150V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
на замовлення 591 шт:
термін постачання 21-31 дні (днів)
1+502.44 грн
50+257.04 грн
100+240.29 грн
500+190.91 грн
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IPP052NE7N3GHKSA1 IPP052NE7N3GHKSA1 Infineon Technologies Infineon-IPP052NE7N3+G-DS-v02_01-EN.pdf?fileId=5546d4624fb7fef2014ff96f171905f2 Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
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IPP100N08N3GHKSA1 IPP100N08N3GHKSA1 Infineon Technologies Infineon-IPP100N08N3+G-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef2014ff98a754b064b Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
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IPP093N06N3GHKSA1 IPP093N06N3GHKSA1 Infineon Technologies Infineon-IPP_B093N06N3-DS-v01_02-en.pdf?fileId=db3a30432313ff5e0123a3593b1425eb Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
товару немає в наявності
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IPP086N10N3GHKSA1 IPP086N10N3GHKSA1 Infineon Technologies dgdl?fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
товару немає в наявності
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IPP084N06L3GHKSA1 IPP084N06L3GHKSA1 Infineon Technologies dgdl?fileId=db3a30433ba77ced013bade4048934ce Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
товару немає в наявності
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IPP075N15N3GHKSA1 IPP075N15N3GHKSA1 Infineon Technologies Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad Description: MOSFET N-CH 150V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
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IPP072N10N3GHKSA1 IPP072N10N3GHKSA1 Infineon Technologies Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012393bed2d20405 Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
товару немає в наявності
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CY8C4125AZI-483 Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AZI-483
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+312.54 грн
10+227.65 грн
25+209.41 грн
100+177.69 грн
250+168.71 грн
500+163.30 грн
1000+156.24 грн
2500+151.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CYPD1134-40LQXI Infineon-CCG1_USB_Type-C_Port_Controller_with_Power_Delivery-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecca41046df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD1134-40LQXI
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
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CYPD2103-14LHXIT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD2103-14LHXIT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 14DFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 14-DFN-EP (2.5x3.5)
Part Status: Active
Number of I/O: 7
DigiKey Programmable: Not Verified
на замовлення 3444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.08 грн
10+84.71 грн
25+76.99 грн
100+64.25 грн
250+60.43 грн
500+58.13 грн
1000+55.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYPD2105-20FNXIT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD2105-20FNXIT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 20-WLCSP (1.63x2.03)
Part Status: Active
Number of I/O: 9
DigiKey Programmable: Not Verified
на замовлення 3934 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.37 грн
10+100.21 грн
25+91.22 грн
100+76.36 грн
250+71.95 грн
500+69.29 грн
1000+66.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C1061G30-10BV1XI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G30-10BV1XI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2046.39 грн
10+1824.55 грн
25+1766.54 грн
50+1617.01 грн
100+1576.64 грн
В кошику  од. на суму  грн.
CY7C1061G30-10BVJXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G30-10BVJXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1513.29 грн
10+1348.59 грн
25+1305.70 грн
50+1195.18 грн
100+1165.36 грн
В кошику  од. на суму  грн.
CY7C1061GN30-10ZSXI CY7C1061GN30.pdf
CY7C1061GN30-10ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1720.23 грн
10+1532.85 грн
25+1483.94 грн
50+1358.22 грн
108+1320.49 грн
324+1290.29 грн
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PTMA080152MV1R500AUMA1 dgdl?fileId=db3a3043327f13e301328dad0bf80abe
PTMA080152MV1R500AUMA1
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS 15W DSO-20
товару немає в наявності
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IFX1763XEJVXUMA1 Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t
IFX1763XEJVXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
товару немає в наявності
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IPB60R190P6ATMA1 IPx60R190P6.pdf
IPB60R190P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
товару немає в наявності
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IPB60R380P6ATMA1 IPx60R380P6.pdf
IPB60R380P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
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TLE5009E1000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E1000FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.24 грн
5+175.98 грн
10+168.11 грн
25+148.84 грн
50+142.76 грн
100+137.20 грн
500+123.92 грн
1000+119.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE5009E2000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E2000FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+169.47 грн
5+145.31 грн
10+138.59 грн
25+122.52 грн
50+117.41 грн
100+112.71 грн
500+101.58 грн
1000+98.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IFX1763XEJVXUMA1 Infineon-IFX1763-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bca3b274f4e59&ack=t
IFX1763XEJVXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
товару немає в наявності
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IFX54441EJVXUMA1 INFNS30254-1.pdf?t.download=true&u=5oefqw
IFX54441EJVXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
товару немає в наявності
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IPB60R190P6ATMA1 IPx60R190P6.pdf
IPB60R190P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
товару немає в наявності
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IPB60R380P6ATMA1 IPx60R380P6.pdf
IPB60R380P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
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TLE5009E1000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E1000FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
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TLE5009E2000FUMA1 Infineon-TLE5009_EXXXX-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01771b1fec2f3a7f
TLE5009E2000FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+89.88 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLI5012BE1000XUMA1 Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8
TLI5012BE1000XUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE4241GMXUMA1 Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t
TLE4241GMXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
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TLE4253EXUMA2 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253EXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+56.00 грн
5000+52.72 грн
7500+52.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IR7184SPBF ir7184s.pdf?fileId=5546d462533600a4015355d62230182c
IR7184SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR7184STRPBF ir7184s.pdf?fileId=5546d462533600a4015355d62230182c
IR7184STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRF7780MTRPBF irf7780mpbf.pdf?fileId=5546d462533600a401535607b41f1cba
IRF7780MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 89A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 53A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6504 pF @ 25 V
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IRL40B209 Infineon-IRL40B209-DS-v02_00-EN.pdf?fileId=5546d46256fb43b301576b16f39706f5
IRL40B209
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15140 pF @ 25 V
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IRL40B212 Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d
IRL40B212
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
товару немає в наявності
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IRL40B215 Infineon-IRL40B215-DS-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5a5945a3335f
IRL40B215
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
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IRL60B216 irl60b216.pdf
IRL60B216
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
товару немає в наявності
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IRMCK188TR Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC MOTOR CONTROLLER
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IRMCK188TY Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC MOTOR CONTROLLER
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IPB117N20NFDATMA1 DS_IPB117N20NFD_2_0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043440adf7501440c8377500152
IPB117N20NFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+234.79 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ICE1PCS01GFUMA1 Infineon-ICE1PCS01-DS-v01_03-en.pdf?fileId=db3a304412b407950112b427c6f13cc7
ICE1PCS01GFUMA1
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 133KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.2V ~ 21V
Frequency - Switching: 133kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 100 µA
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ICE1PCS02GXUMA1 Infineon-ICE1PCS02-DS-v01_02-en.pdf?fileId=db3a304412b407950112b427c9283ccb
Виробник: Infineon Technologies
Description: IC PFC CTLR CCM 8DSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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ICE2PCS02XKLA1 Infineon-ICE2PCS02-DS-v02_04-en.pdf?fileId=db3a304412b407950112b427cc3c3cdc
ICE2PCS02XKLA1
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 65KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
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ICE2QS03XKLA1 dgdl?fileId=db3a304325305e6d012566b50ebd7070
ICE2QS03XKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
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ICE3B0565JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
ICE3B0565JFKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 25 W
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TCA355GGEGXUMA1 Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a
Виробник: Infineon Technologies
Description: IC PROXIMITY SWITCH 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Proximity Only
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 5V ~ 30V
Current - Supply: 600µA
Number of Inputs: 1
Supplier Device Package: PG-DSO-8
Proximity Detection: Yes
DigiKey Programmable: Not Verified
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TCA355GXLLA1 Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a
Виробник: Infineon Technologies
Description: IC PROXIMITY SWITCH 8DSOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Proximity Only
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 5V ~ 30V
Current - Supply: 600µA
Number of Inputs: 1
Supplier Device Package: PG-DSO-8
Proximity Detection: Yes
DigiKey Programmable: Not Verified
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TLE82612EXUMA2 TLE8261-2E.pdf
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
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TLE82622EXUMA2 TLE8262-2E.pdf
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8261EXUMA2 TLE8261E.pdf
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8262EXUMA2 TLE8262E.pdf
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
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TLE82632EXUMA2 TLE8263-2E.pdf
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8263EXUMA2 Infineon-TLE8263E-DS-v01_00-en.pdf?fileId=db3a304320d39d59012186d0e69429fc&ack=t
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
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TLE8264EXUMA2 TLE8264E.pdf
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
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IPP50R140CPXKSA1 Infineon-IPP50R140CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123850733ed65ab
IPP50R140CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+327.01 грн
50+162.50 грн
100+147.73 грн
Мінімальне замовлення: 2
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IRL40S212 Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d
IRL40S212
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
товару немає в наявності
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IPD60R600CPATMA1 Infineon-IPD60R600CP-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012385657d1567e3
IPD60R600CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
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IPP06CN10NGXKSA1 IP(B,I,P)06CN10N_G.pdf
IPP06CN10NGXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
товару немає в наявності
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IPP12CN10NGXKSA1 dgdl?fileId=db3a304412b407950112b42c236e467c
IPP12CN10NGXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO220-3
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IPP35CN10NGXKSA1 dgdl?fileId=db3a304412b407950112b42b457b44b1
IPP35CN10NGXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO220-3
товару немає в наявності
В кошику  од. на суму  грн.
IPI075N15N3GXKSA1 Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad
IPI075N15N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
на замовлення 591 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+502.44 грн
50+257.04 грн
100+240.29 грн
500+190.91 грн
В кошику  од. на суму  грн.
IPP052NE7N3GHKSA1 Infineon-IPP052NE7N3+G-DS-v02_01-EN.pdf?fileId=5546d4624fb7fef2014ff96f171905f2
IPP052NE7N3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
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IPP100N08N3GHKSA1 Infineon-IPP100N08N3+G-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef2014ff98a754b064b
IPP100N08N3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
товару немає в наявності
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IPP093N06N3GHKSA1 Infineon-IPP_B093N06N3-DS-v01_02-en.pdf?fileId=db3a30432313ff5e0123a3593b1425eb
IPP093N06N3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
товару немає в наявності
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IPP086N10N3GHKSA1 dgdl?fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPP086N10N3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
товару немає в наявності
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IPP084N06L3GHKSA1 dgdl?fileId=db3a30433ba77ced013bade4048934ce
IPP084N06L3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
товару немає в наявності
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IPP075N15N3GHKSA1 Infineon-IPP075N15N3_G-DS-v02_06-en.pdf?fileId=db3a30432313ff5e012399f743143bad
IPP075N15N3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
товару немає в наявності
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IPP072N10N3GHKSA1 Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e012393bed2d20405
IPP072N10N3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
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