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CY7C1315KV18-333BZXC CY7C1315KV18-333BZXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8CKIT-024 CY8CKIT-024 Infineon Technologies Infineon-CY8CKIT_024_CapSense(R)_Proximity_Shield_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef1958d02ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PROXIMITY SHIELD PSOC 4
Packaging: Bulk
Sensor Type: Proximity
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+4711.83 грн
В кошику  од. на суму  грн.
CY8CKIT-037 CY8CKIT-037 Infineon Technologies Infineon-CY8CKIT-037_PSoC_4_Motor_Control_Evaluation_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa532a1027&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL BOARD FOR PSOC 4
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s), Cable(s), Power Supply, Accessories
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+18834.17 грн
В кошику  од. на суму  грн.
CY8CKIT-141 CY8CKIT-141 Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PSOC 4 BLE SMA MODULE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+1456.06 грн
В кошику  од. на суму  грн.
CY8CKIT-143 CY8CKIT-143 Infineon Technologies download Description: DEV KIT PSOC 4 BLUETOOTH 4.1 BLE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R125P6XKSA1 IPA60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R160P6XKSA1 IPA60R160P6XKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
2+252.40 грн
50+122.13 грн
100+116.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R230P6XKSA1 IPA60R230P6XKSA1 Infineon Technologies Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1 Description: MOSFET N-CH 600V 16.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
2+213.76 грн
50+84.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R280P6XKSA1 IPA60R280P6XKSA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 826 шт:
термін постачання 21-31 дні (днів)
2+190.74 грн
50+86.87 грн
100+82.53 грн
500+59.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R380P6XKSA1 IPA60R380P6XKSA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
3+144.70 грн
50+67.45 грн
100+60.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R099P6XKSA1 IPP60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160P6XKSA1 IPP60R160P6XKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
2+237.61 грн
50+115.31 грн
100+104.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R230P6XKSA1 IPP60R230P6XKSA1 Infineon Technologies Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1 Description: MOSFET N-CH 600V 16.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R330P6XKSA1 IPP60R330P6XKSA1 Infineon Technologies IPx60R330P6.pdf Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380P6XKSA1 IPP60R380P6XKSA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099P6XKSA1 IPW60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
1+408.62 грн
30+172.07 грн
120+165.87 грн
510+148.56 грн
В кошику  од. на суму  грн.
IPW60R125P6XKSA1 IPW60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
2+258.16 грн
30+171.72 грн
120+154.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 IPW60R160P6FKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
2+258.16 грн
30+122.85 грн
120+115.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R280P6FKSA1 IPW60R280P6FKSA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
2+230.21 грн
30+120.10 грн
120+97.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 IPD60R380P6ATMA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+49.18 грн
5000+46.28 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPL60R180P6AUMA1 IPL60R180P6AUMA1 Infineon Technologies DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+89.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPL60R210P6AUMA1 IPL60R210P6AUMA1 Infineon Technologies DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b Description: MOSFET N-CH 600V 19.2A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+89.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPL60R255P6AUMA1 IPL60R255P6AUMA1 Infineon Technologies DS_IPL60R255P6_2_0.pdf?fileId=5546d4614755559a01479191092861a4 Description: MOSFET N-CH 600V 15.9A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-VSON-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R360P6SATMA1 IPL60R360P6SATMA1 Infineon Technologies DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R650P6SATMA1 IPL60R650P6SATMA1 Infineon Technologies DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037 Description: MOSFET N-CH 600V 6.7A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 IPD60R380P6ATMA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 7122 шт:
термін постачання 21-31 дні (днів)
3+148.81 грн
10+96.67 грн
100+71.44 грн
500+53.50 грн
1000+49.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R180P6AUMA1 IPL60R180P6AUMA1 Infineon Technologies DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 4795 шт:
термін постачання 21-31 дні (днів)
3+156.21 грн
10+135.30 грн
100+119.48 грн
500+99.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R210P6AUMA1 IPL60R210P6AUMA1 Infineon Technologies DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b Description: MOSFET N-CH 600V 19.2A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+268.85 грн
10+169.11 грн
100+117.95 грн
500+90.20 грн
1000+83.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R255P6AUMA1 IPL60R255P6AUMA1 Infineon Technologies DS_IPL60R255P6_2_0.pdf?fileId=5546d4614755559a01479191092861a4 Description: MOSFET N-CH 600V 15.9A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-VSON-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R360P6SATMA1 IPL60R360P6SATMA1 Infineon Technologies DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
на замовлення 4075 шт:
термін постачання 21-31 дні (днів)
3+123.32 грн
10+89.54 грн
100+64.98 грн
500+48.64 грн
1000+46.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R650P6SATMA1 IPL60R650P6SATMA1 Infineon Technologies DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037 Description: MOSFET N-CH 600V 6.7A 8THINPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE4998C3XALA1 TLE4998C3XALA1 Infineon Technologies Infineon-TLE4998C-DS-v01_00-en.pdf?fileId=db3a3043243b5f170124bf6406be59d4 Description: SENSOR HALL PWM SSO3-10
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
2+248.29 грн
5+201.41 грн
10+187.16 грн
25+159.36 грн
50+148.09 грн
100+137.63 грн
500+132.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4998P3XALA1 TLE4998P3XALA1 Infineon Technologies Infineon-TLE4998P-DS-v01_00-en.pdf?fileId=db3a30431ce5fb52011d3e9a9f3425b1 Description: SENSOR HALL PWM SSO3-10
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
2N7002H6327XTSA2 2N7002H6327XTSA2 Infineon Technologies Infineon-2N7002-DS-v02_04-en.pdf?fileId=db3a304319bc939a0119c2a9461e79e6 Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
на замовлення 75802 шт:
термін постачання 21-31 дні (днів)
31+10.69 грн
57+5.62 грн
100+4.09 грн
500+3.45 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
BFR840L3RHESDE6327XTSA1 BFR840L3RHESDE6327XTSA1 Infineon Technologies Infineon-BFR840L3RHESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389709cd4ece Description: RF TRANS NPN 2.6V 75GHZ TSLP-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 75GHz
Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
на замовлення 6191 шт:
термін постачання 21-31 дні (днів)
8+41.93 грн
12+28.34 грн
25+25.30 грн
100+20.66 грн
250+19.19 грн
500+18.30 грн
1000+17.28 грн
2500+16.52 грн
5000+16.07 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC0911NDATMA1 BSC0911NDATMA1 Infineon Technologies Infineon-BSC0911ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceebf62c4946 Description: MOSFET 2N-CH 25V 18A/30A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 18A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 9740 шт:
термін постачання 21-31 дні (днів)
3+115.93 грн
10+84.48 грн
100+62.97 грн
500+51.74 грн
1000+50.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP125H6327XTSA1 BSP125H6327XTSA1 Infineon Technologies Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
5+71.53 грн
10+41.80 грн
100+27.82 грн
500+20.12 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP129H6327XTSA1 BSP129H6327XTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8290 шт:
термін постачання 21-31 дні (днів)
6+56.73 грн
10+41.80 грн
100+27.24 грн
500+22.48 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSP135H6327XTSA1 BSP135H6327XTSA1 Infineon Technologies Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 51916 шт:
термін постачання 21-31 дні (днів)
3+116.75 грн
10+70.62 грн
100+49.98 грн
500+37.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP149H6327XTSA1 BSP149H6327XTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2315 шт:
термін постачання 21-31 дні (днів)
4+107.70 грн
10+65.63 грн
100+43.68 грн
500+32.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP149H6906XTSA1 BSP149H6906XTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSP170PH6327XTSA1 BSP170PH6327XTSA1 Infineon Technologies Infineon-BSP170P-DS-v02_53-en.pdf?fileId=db3a30433b47825b013b5fdad470576f Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7632 шт:
термін постачання 21-31 дні (днів)
5+79.75 грн
10+47.27 грн
100+32.62 грн
500+23.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP171PH6327XTSA1 BSP171PH6327XTSA1 Infineon Technologies Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3671 шт:
термін постачання 21-31 дні (днів)
5+81.39 грн
10+48.93 грн
100+32.13 грн
500+23.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP295H6327XTSA1 BSP295H6327XTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6640 шт:
термін постачання 21-31 дні (днів)
5+71.53 грн
10+46.00 грн
100+30.35 грн
500+23.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP297H6327XTSA1 BSP297H6327XTSA1 Infineon Technologies Infineon-BSP297-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b51250a8528c2 Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
5+67.42 грн
10+47.90 грн
100+33.32 грн
500+24.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP298H6327XUSA1 BSP298H6327XUSA1 Infineon Technologies Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29 Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSP300H6327XUSA1 BSP300H6327XUSA1 Infineon Technologies Infineon-BSP300-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c980bd0110d Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSP315PH6327XTSA1 BSP315PH6327XTSA1 Infineon Technologies Infineon-BSP315P-DS-v01_07-en.pdf?fileId=db3a30433b47825b013b6015cc1558b9 Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17595 шт:
термін постачання 21-31 дні (днів)
6+59.20 грн
10+39.90 грн
100+27.19 грн
500+20.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSP316PH6327XTSA1 BSP316PH6327XTSA1 Infineon Technologies Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2 Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 28179 шт:
термін постачання 21-31 дні (днів)
10+34.53 грн
13+26.36 грн
100+17.07 грн
500+15.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BSP317PH6327XTSA1 BSP317PH6327XTSA1 Infineon Technologies Infineon-BSP317P-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b604df1d959f2 Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 393 шт:
термін постачання 21-31 дні (днів)
5+78.11 грн
10+54.15 грн
100+36.29 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP322PH6327XTSA1 BSP322PH6327XTSA1 Infineon Technologies Infineon-BSP322P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b60a022246d9c Description: MOSFET P-CH 100V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
7+53.44 грн
10+51.14 грн
100+33.81 грн
500+25.34 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSP324H6327XTSA1 BSP324H6327XTSA1 Infineon Technologies Infineon-BSP324-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c38c51e0fe9 Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2293 шт:
термін постачання 21-31 дні (днів)
5+76.46 грн
10+47.11 грн
100+32.40 грн
500+23.90 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP613PH6327XTSA1 BSP613PH6327XTSA1 Infineon Technologies Infineon-BSP613P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b60ac86a96dc0 Description: MOSFET P-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6030 шт:
термін постачання 21-31 дні (днів)
3+119.21 грн
10+57.00 грн
100+43.58 грн
500+35.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSS119NH6327XTSA1 BSS119NH6327XTSA1 Infineon Technologies Infineon-BSS119N-DS-v02_01-en.pdf?fileId=db3a304335f1f4b6013639b6532a164a Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22988 шт:
термін постачання 21-31 дні (днів)
16+21.38 грн
26+12.43 грн
100+5.81 грн
1000+5.39 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BSS123NH6327XTSA1 BSS123NH6327XTSA1 Infineon Technologies Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 156924 шт:
термін постачання 21-31 дні (днів)
34+9.87 грн
53+6.02 грн
100+4.78 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BSS123NH6433XTMA1 BSS123NH6433XTMA1 Infineon Technologies Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 151592 шт:
термін постачання 21-31 дні (днів)
15+23.02 грн
27+11.95 грн
100+6.25 грн
500+5.76 грн
1000+4.84 грн
2000+4.46 грн
5000+3.87 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BSS138WH6327XTSA1 BSS138WH6327XTSA1 Infineon Technologies Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 85518 шт:
термін постачання 21-31 дні (днів)
27+12.33 грн
54+5.94 грн
100+4.78 грн
500+4.36 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BSS192PH6327FTSA1 BSS192PH6327FTSA1 Infineon Technologies Infineon-BSS192P-DS-v01_07-en.pdf?fileId=db3a304342e8be2c014300e20296154c Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4556 шт:
термін постачання 21-31 дні (днів)
8+45.22 грн
11+29.21 грн
100+19.96 грн
500+15.60 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 Infineon Technologies Infineon-BSS209PW-DS-v01_32-en.pdf?fileId=db3a3043321e499401324806c439244b Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 101346 шт:
термін постачання 21-31 дні (днів)
20+17.27 грн
32+10.21 грн
100+5.99 грн
500+5.02 грн
1000+4.62 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 Infineon Technologies Infineon-BSS223PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132481523b6245f Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29891 шт:
термін постачання 21-31 дні (днів)
20+17.27 грн
34+9.42 грн
100+5.34 грн
500+4.35 грн
1000+3.93 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
CY7C1315KV18-333BZXC download
CY7C1315KV18-333BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8CKIT-024 Infineon-CY8CKIT_024_CapSense(R)_Proximity_Shield_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef1958d02ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-024
Виробник: Infineon Technologies
Description: DEV KIT PROXIMITY SHIELD PSOC 4
Packaging: Bulk
Sensor Type: Proximity
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4711.83 грн
В кошику  од. на суму  грн.
CY8CKIT-037 Infineon-CY8CKIT-037_PSoC_4_Motor_Control_Evaluation_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa532a1027&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-037
Виробник: Infineon Technologies
Description: EVAL BOARD FOR PSOC 4
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s), Cable(s), Power Supply, Accessories
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18834.17 грн
В кошику  од. на суму  грн.
CY8CKIT-141 Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-141
Виробник: Infineon Technologies
Description: DEV KIT PSOC 4 BLE SMA MODULE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1456.06 грн
В кошику  од. на суму  грн.
CY8CKIT-143 download
CY8CKIT-143
Виробник: Infineon Technologies
Description: DEV KIT PSOC 4 BLUETOOTH 4.1 BLE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPA60R125P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R160P6XKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPA60R160P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+252.40 грн
50+122.13 грн
100+116.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R230P6XKSA1 Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1
IPA60R230P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.76 грн
50+84.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R280P6XKSA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPA60R280P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 826 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.74 грн
50+86.87 грн
100+82.53 грн
500+59.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R380P6XKSA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPA60R380P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.70 грн
50+67.45 грн
100+60.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPP60R099P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160P6XKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPP60R160P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.61 грн
50+115.31 грн
100+104.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R230P6XKSA1 Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1
IPP60R230P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
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IPP60R330P6XKSA1 IPx60R330P6.pdf
IPP60R330P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380P6XKSA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPP60R380P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPW60R099P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+408.62 грн
30+172.07 грн
120+165.87 грн
510+148.56 грн
В кошику  од. на суму  грн.
IPW60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPW60R125P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+258.16 грн
30+171.72 грн
120+154.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPW60R160P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+258.16 грн
30+122.85 грн
120+115.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R280P6FKSA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPW60R280P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.21 грн
30+120.10 грн
120+97.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPD60R380P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+49.18 грн
5000+46.28 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPL60R180P6AUMA1 DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146
IPL60R180P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+89.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPL60R210P6AUMA1 DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b
IPL60R210P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+89.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPL60R255P6AUMA1 DS_IPL60R255P6_2_0.pdf?fileId=5546d4614755559a01479191092861a4
IPL60R255P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 15.9A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-VSON-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R360P6SATMA1 DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c
IPL60R360P6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R650P6SATMA1 DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037
IPL60R650P6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPD60R380P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 7122 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.81 грн
10+96.67 грн
100+71.44 грн
500+53.50 грн
1000+49.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R180P6AUMA1 DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146
IPL60R180P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 4795 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.21 грн
10+135.30 грн
100+119.48 грн
500+99.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R210P6AUMA1 DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b
IPL60R210P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+268.85 грн
10+169.11 грн
100+117.95 грн
500+90.20 грн
1000+83.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R255P6AUMA1 DS_IPL60R255P6_2_0.pdf?fileId=5546d4614755559a01479191092861a4
IPL60R255P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 15.9A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-VSON-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R360P6SATMA1 DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c
IPL60R360P6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
на замовлення 4075 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.32 грн
10+89.54 грн
100+64.98 грн
500+48.64 грн
1000+46.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R650P6SATMA1 DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037
IPL60R650P6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE4998C3XALA1 Infineon-TLE4998C-DS-v01_00-en.pdf?fileId=db3a3043243b5f170124bf6406be59d4
TLE4998C3XALA1
Виробник: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+248.29 грн
5+201.41 грн
10+187.16 грн
25+159.36 грн
50+148.09 грн
100+137.63 грн
500+132.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4998P3XALA1 Infineon-TLE4998P-DS-v01_00-en.pdf?fileId=db3a30431ce5fb52011d3e9a9f3425b1
TLE4998P3XALA1
Виробник: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
2N7002H6327XTSA2 Infineon-2N7002-DS-v02_04-en.pdf?fileId=db3a304319bc939a0119c2a9461e79e6
2N7002H6327XTSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
на замовлення 75802 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.69 грн
57+5.62 грн
100+4.09 грн
500+3.45 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
BFR840L3RHESDE6327XTSA1 Infineon-BFR840L3RHESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389709cd4ece
BFR840L3RHESDE6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.6V 75GHZ TSLP-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 75GHz
Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
на замовлення 6191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.93 грн
12+28.34 грн
25+25.30 грн
100+20.66 грн
250+19.19 грн
500+18.30 грн
1000+17.28 грн
2500+16.52 грн
5000+16.07 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC0911NDATMA1 Infineon-BSC0911ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceebf62c4946
BSC0911NDATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 18A/30A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 18A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 9740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.93 грн
10+84.48 грн
100+62.97 грн
500+51.74 грн
1000+50.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP125H6327XTSA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
BSP125H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.53 грн
10+41.80 грн
100+27.82 грн
500+20.12 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP129H6327XTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.73 грн
10+41.80 грн
100+27.24 грн
500+22.48 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSP135H6327XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
BSP135H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 51916 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.75 грн
10+70.62 грн
100+49.98 грн
500+37.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP149H6327XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+107.70 грн
10+65.63 грн
100+43.68 грн
500+32.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSP170PH6327XTSA1 Infineon-BSP170P-DS-v02_53-en.pdf?fileId=db3a30433b47825b013b5fdad470576f
BSP170PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7632 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+79.75 грн
10+47.27 грн
100+32.62 грн
500+23.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP171PH6327XTSA1 Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa
BSP171PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3671 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+81.39 грн
10+48.93 грн
100+32.13 грн
500+23.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP295H6327XTSA1 Infineon-BSP295-DS-v02_03-en.pdf?fileId=db3a30433b47825b013b5fc5eed1573f
BSP295H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.53 грн
10+46.00 грн
100+30.35 грн
500+23.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP297H6327XTSA1 Infineon-BSP297-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b51250a8528c2
BSP297H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.42 грн
10+47.90 грн
100+33.32 грн
500+24.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP298H6327XUSA1 Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29
BSP298H6327XUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSP300H6327XUSA1 Infineon-BSP300-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c980bd0110d
BSP300H6327XUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSP315PH6327XTSA1 Infineon-BSP315P-DS-v01_07-en.pdf?fileId=db3a30433b47825b013b6015cc1558b9
BSP315PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.20 грн
10+39.90 грн
100+27.19 грн
500+20.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSP316PH6327XTSA1 Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2
BSP316PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 28179 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.53 грн
13+26.36 грн
100+17.07 грн
500+15.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BSP317PH6327XTSA1 Infineon-BSP317P-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b604df1d959f2
BSP317PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 393 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.11 грн
10+54.15 грн
100+36.29 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP322PH6327XTSA1 Infineon-BSP322P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b60a022246d9c
BSP322PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.44 грн
10+51.14 грн
100+33.81 грн
500+25.34 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSP324H6327XTSA1 Infineon-BSP324-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c38c51e0fe9
BSP324H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2293 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.46 грн
10+47.11 грн
100+32.40 грн
500+23.90 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSP613PH6327XTSA1 Infineon-BSP613P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b60ac86a96dc0
BSP613PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.21 грн
10+57.00 грн
100+43.58 грн
500+35.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSS119NH6327XTSA1 Infineon-BSS119N-DS-v02_01-en.pdf?fileId=db3a304335f1f4b6013639b6532a164a
BSS119NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.38 грн
26+12.43 грн
100+5.81 грн
1000+5.39 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BSS123NH6327XTSA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 156924 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.87 грн
53+6.02 грн
100+4.78 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 151592 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.02 грн
27+11.95 грн
100+6.25 грн
500+5.76 грн
1000+4.84 грн
2000+4.46 грн
5000+3.87 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BSS138WH6327XTSA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 85518 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.33 грн
54+5.94 грн
100+4.78 грн
500+4.36 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BSS192PH6327FTSA1 Infineon-BSS192P-DS-v01_07-en.pdf?fileId=db3a304342e8be2c014300e20296154c
BSS192PH6327FTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4556 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.22 грн
11+29.21 грн
100+19.96 грн
500+15.60 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS209PWH6327XTSA1 Infineon-BSS209PW-DS-v01_32-en.pdf?fileId=db3a3043321e499401324806c439244b
BSS209PWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 101346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.27 грн
32+10.21 грн
100+5.99 грн
500+5.02 грн
1000+4.62 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BSS223PWH6327XTSA1 Infineon-BSS223PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132481523b6245f
BSS223PWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29891 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.27 грн
34+9.42 грн
100+5.34 грн
500+4.35 грн
1000+3.93 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
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