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IPL65R130C7AUMA1 IPL65R130C7AUMA1 Infineon Technologies Infineon-IPL65R130C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7977eef9029b Description: MOSFET N-CH 650V 15A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
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IPL65R230C7AUMA1 IPL65R230C7AUMA1 Infineon Technologies Infineon-IPL65R230C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e798fa6d80332 Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+65.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPLU300N04S4R8XTMA1 IPLU300N04S4R8XTMA1 Infineon Technologies IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+184.97 грн
Мінімальне замовлення: 2000
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IPT012N08N5ATMA1 IPT012N08N5ATMA1 Infineon Technologies Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9 Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+156.48 грн
Мінімальне замовлення: 2000
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KP236N6165XTMA1 KP236N6165XTMA1 Infineon Technologies Infineon-KP236_N6165-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af68133600b1a Description: SENSOR 23.93PSIA 4.85V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
1500+238.95 грн
3000+223.69 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SPD02N80C3ATMA1 SPD02N80C3ATMA1 Infineon Technologies Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334 Description: MOSFET N-CH 800V 2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+30.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+42.30 грн
5000+39.44 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SPD06N80C3ATMA1 SPD06N80C3ATMA1 Infineon Technologies Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SPD08P06PGBTMA1 SPD08P06PGBTMA1 Infineon Technologies Infineon-SPD08P06PG-DS-v01_92-en.pdf?fileId=db3a30431ed1d7b2011f40433a224ec6 Description: MOSFET P-CH 60V 8.83A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.2V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+23.87 грн
5000+21.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TC275TP64F200WCAKXUMA1 TC275TP64F200WCAKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+1754.43 грн
Мінімальне замовлення: 500
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TC277TP64F200SCAKXUMA1 TC277TP64F200SCAKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
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TLD1120ELXUMA1 TLD1120ELXUMA1 Infineon Technologies Infineon-TLD1120EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e0a8c163245 Description: IC LED DRVR LINEAR 360MA 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
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TLE4253GSXUMA3 TLE4253GSXUMA3 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42642GHTSA2 TLE42642GHTSA2 Infineon Technologies Infineon-TLE4264-2G-DS-v02_60-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42662GSV33HTMA2 TLE42662GSV33HTMA2 Infineon Technologies Infineon-TLE4266-2-DS-v01_40-EN.pdf?fileId=5546d46259d9a4bf0159f94369cf3e1b Description: IC REG LINEAR 3.3V PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
4000+60.34 грн
8000+56.97 грн
12000+56.40 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
TLE62086GXUMA2 TLE62086GXUMA2 Infineon Technologies Infineon-TLE6208_6G-DS-v01_02-en.pdf?fileId=db3a30431c48a312011c4c052072000c&ack=t Description: IC MOTOR DRIVER 4.75V-5.5V 28DSO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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TLE7240SLXUMA1 TLE7240SLXUMA1 Infineon Technologies TLE724xSL_PB.pdf Description: IC PWR DRIVER N-CHANNEL 1:2
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Voltage - Load: 41V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 210mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
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TLE9879QXA40XUMA1 TLE9879QXA40XUMA1 Infineon Technologies Infineon-TLE9879QXA40-UM-v01_00-EN.pdf?fileId=5546d4624e24005f014e52ca1628452c Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Obsolete
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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XE164FM72F80LRABKXUMA1 XE164FM72F80LRABKXUMA1 Infineon Technologies Infineon-XE164xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1d288804ef&ack=t Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Not For New Designs
Number of I/O: 76
DigiKey Programmable: Not Verified
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XE167FM72F80LRABKXUMA1 XE167FM72F80LRABKXUMA1 Infineon Technologies Infineon-XE167xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1468cf04e3&ack=t Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 119
DigiKey Programmable: Not Verified
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XMC1302T038X0064AAXUMA1 XMC1302T038X0064AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
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C167CRLMHAFXQLA1 C167CRLMHAFXQLA1 Infineon Technologies Infineon-C167CR-DS-v03_03-en%5B1%5D.pdf?fileId=db3a304412b407950112b41daf9f30b4&ack=t Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
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XC161CJ16F40FBBFXQMA1 XC161CJ16F40FBBFXQMA1 Infineon Technologies Infineon-XC161_16-DS-v02_04-en.pdf?fileId=db3a304412b407950112b41cd87f2ef8&ack=t Description: IC MCU 16BIT 128KB FLASH 144TQFP
товару немає в наявності
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IDW10G120C5BFKSA1 IDW10G120C5BFKSA1 Infineon Technologies Infineon-20140610_IDW10G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146952e63f869aa Description: DIODE ARRAY SIC 1200V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 17A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товару немає в наявності
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IPA65R190C7XKSA1 IPA65R190C7XKSA1 Infineon Technologies Infineon-IPA65R190C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be94da350082 Description: MOSFET N-CH 650V 8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
товару немає в наявності
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IPP200N15N3GHKSA1 IPP200N15N3GHKSA1 Infineon Technologies Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
товару немає в наявності
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IPP65R125C7XKSA1 IPP65R125C7XKSA1 Infineon Technologies Infineon-IPP65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209f7e8700375 Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 888 шт:
термін постачання 21-31 дні (днів)
2+298.81 грн
50+164.62 грн
100+155.64 грн
500+116.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPA11N60C3XKSA1 SPA11N60C3XKSA1 Infineon Technologies SPx11N60C3%20%28E8185%29.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
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SPA20N60C3XKSA1 SPA20N60C3XKSA1 Infineon Technologies Infineon-SPP_I_A20N60C3-DS-v03_01-en.pdf?fileId=db3a304318f3fe290119090054e32a20 Description: MOSFET N-CH 600V 20.7A TO220-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
2+302.96 грн
10+192.39 грн
100+135.96 грн
500+104.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BBY5102VH6327XTSA1 BBY5102VH6327XTSA1 Infineon Technologies bby51series.pdf Description: DIODE TUNING 2SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
товару немає в наявності
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BFQ19SH6327XTSA1 BFQ19SH6327XTSA1 Infineon Technologies Infineon-BFQ19S-DS-v01_01-en.pdf?fileId=db3a30431400ef6801142683f6870630 Description: RF TRANS NPN 15V 5.5GHZ PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 1W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3dB @ 1.8GHz
Supplier Device Package: PG-SOT89
на замовлення 7759 шт:
термін постачання 21-31 дні (днів)
10+36.52 грн
13+24.70 грн
25+22.06 грн
100+17.99 грн
250+16.70 грн
500+15.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 Infineon Technologies Infineon-BSC035N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae8b5f3bc1b6f Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
на замовлення 7090 шт:
термін постачання 21-31 дні (днів)
2+244.85 грн
10+153.70 грн
100+106.99 грн
500+86.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 Infineon Technologies Infineon-BSC070N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fc62d9d6b3c Description: MOSFET N-CH 100V 80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 13257 шт:
термін постачання 21-31 дні (днів)
3+150.23 грн
10+92.64 грн
100+62.74 грн
500+46.87 грн
1000+44.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC097N06NSATMA1 BSC097N06NSATMA1 Infineon Technologies Infineon-BSC097N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cdd69b87155 Description: MOSFET N-CH 60V 46A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
на замовлення 21184 шт:
термін постачання 21-31 дні (днів)
4+95.45 грн
10+59.71 грн
100+41.35 грн
500+31.25 грн
1000+27.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSS126H6327XTSA2 BSS126H6327XTSA2 Infineon Technologies Infineon-BSS126-DS-v02_01-en.pdf?fileId=db3a304330f6860601310483af163eba Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 28224 шт:
термін постачання 21-31 дні (днів)
8+44.82 грн
13+26.38 грн
100+16.86 грн
500+11.97 грн
1000+10.72 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS127H6327XTSA2 BSS127H6327XTSA2 Infineon Technologies Infineon-BSS127-DS-v02_01-en.pdf?fileId=db3a304330f686060131049ef4883edb Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13158 шт:
термін постачання 21-31 дні (днів)
11+31.54 грн
18+18.46 грн
100+11.67 грн
500+8.18 грн
1000+7.28 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BSS138NH6327XTSA2 BSS138NH6327XTSA2 Infineon Technologies Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 83309 шт:
термін постачання 21-31 дні (днів)
18+19.09 грн
28+11.43 грн
100+7.15 грн
500+4.93 грн
1000+4.36 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS159NH6327XTSA2 BSS159NH6327XTSA2 Infineon Technologies Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16683 шт:
термін постачання 21-31 дні (днів)
9+39.84 грн
14+23.34 грн
100+14.87 грн
500+10.50 грн
1000+9.39 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS84PH6327XTSA2 BSS84PH6327XTSA2 Infineon Technologies Infineon-BSS84P-DS-v02_07-en.pdf?fileId=db3a304330f68606013118ac7a9b4549 Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 110105 шт:
термін постачання 21-31 дні (днів)
19+18.26 грн
30+10.87 грн
100+6.80 грн
500+4.69 грн
1000+4.14 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BSZ097N10NS5ATMA1 BSZ097N10NS5ATMA1 Infineon Technologies Infineon-BSZ097N10NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145d5a1b051648d Description: MOSFET N-CH 100V 8A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
на замовлення 5313 шт:
термін постачання 21-31 дні (днів)
3+155.21 грн
10+95.99 грн
100+65.09 грн
500+48.70 грн
1000+46.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS50301EJAXUMA1 BTS50301EJAXUMA1 Infineon Technologies Infineon-BTS5030-1EJA-DS-v02_20-EN.pdf?fileId=5546d46259d9a4bf015a84f3e686758a Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Voltage - Load: 8V ~ 18V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 5661 шт:
термін постачання 21-31 дні (днів)
3+120.35 грн
10+84.88 грн
25+77.15 грн
100+64.42 грн
250+60.61 грн
500+58.31 грн
1000+55.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS50451EJAXUMA1 BTS50451EJAXUMA1 Infineon Technologies Infineon-BTS5045-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa411125b1069 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 13242 шт:
термін постачання 21-31 дні (днів)
4+107.07 грн
10+75.21 грн
25+68.29 грн
100+56.92 грн
250+53.49 грн
500+51.42 грн
1000+48.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ESD108B1CSP0201XTSA1 ESD108B1CSP0201XTSA1 Infineon Technologies Infineon-ESD108-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d4624b0b249c014b1746e4d05aa8 Description: TVS DIODE 5.5VWM 41VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.28pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 27.5W
Power Line Protection: No
Part Status: Active
на замовлення 474550 шт:
термін постачання 21-31 дні (днів)
37+9.13 грн
50+6.39 грн
129+2.49 грн
500+2.20 грн
1000+2.01 грн
2000+1.98 грн
5000+1.91 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
ICE3PCS01GXUMA1 ICE3PCS01GXUMA1 Infineon Technologies Infineon-ICE3PCS01-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67ae8c02b46 Description: IC PFC CTRLR CCM 100KHZ 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-14
Part Status: Active
Current - Startup: 380 µA
на замовлення 26138 шт:
термін постачання 21-31 дні (днів)
4+104.58 грн
10+73.53 грн
25+66.69 грн
100+55.53 грн
250+52.17 грн
500+50.14 грн
1000+47.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPB020N10N5ATMA1 IPB020N10N5ATMA1 Infineon Technologies Infineon-IPB020N10N5-DS-v02_01-en.pdf?fileId=5546d461454603990145d1e190ea6423 Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
на замовлення 7458 шт:
термін постачання 21-31 дні (днів)
1+424.14 грн
10+273.59 грн
100+197.00 грн
500+182.13 грн
В кошику  од. на суму  грн.
IPB180P04P4L02ATMA1 IPB180P04P4L02ATMA1 Infineon Technologies IPB180P04P4L-02_Rev1.4_7-4-19.pdf Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50P04P413ATMA1 IPD50P04P413ATMA1 Infineon Technologies Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380P6BTMA1 IPD60R380P6BTMA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R385CPATMA1 IPD60R385CPATMA1 Infineon Technologies Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
2+198.37 грн
10+123.49 грн
100+84.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 Infineon Technologies Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
5+76.36 грн
10+45.72 грн
100+29.89 грн
500+21.67 грн
1000+19.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD65R190C7ATMA1 IPD65R190C7ATMA1 Infineon Technologies Infineon-IPD65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd014209837c650210 Description: MOSFET N-CH 650V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 3585 шт:
термін постачання 21-31 дні (днів)
2+229.08 грн
10+142.99 грн
100+99.14 грн
500+78.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPG20N10S4L22AATMA1 IPG20N10S4L22AATMA1 Infineon Technologies IPG20N10S4L-22A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f76fc25c0a21&ack=t Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
на замовлення 20540 шт:
термін постачання 21-31 дні (днів)
2+173.47 грн
10+100.39 грн
100+73.17 грн
500+55.06 грн
1000+53.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL65R130C7AUMA1 IPL65R130C7AUMA1 Infineon Technologies Infineon-IPL65R130C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7977eef9029b Description: MOSFET N-CH 650V 15A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)
2+197.54 грн
10+164.17 грн
100+154.83 грн
500+142.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPLU300N04S4R8XTMA1 IPLU300N04S4R8XTMA1 Infineon Technologies IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4102 шт:
термін постачання 21-31 дні (днів)
1+463.15 грн
10+299.81 грн
100+218.02 грн
В кошику  од. на суму  грн.
IPT012N08N5ATMA1 IPT012N08N5ATMA1 Infineon Technologies Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9 Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)
1+408.37 грн
10+262.88 грн
100+188.84 грн
500+173.09 грн
В кошику  од. на суму  грн.
KP236N6165XTMA1 KP236N6165XTMA1 Infineon Technologies Infineon-KP236_N6165-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af68133600b1a Description: SENSOR 23.93PSIA 4.85V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10084 шт:
термін постачання 21-31 дні (днів)
1+359.40 грн
5+310.44 грн
10+297.33 грн
25+264.36 грн
50+254.32 грн
100+245.13 грн
500+224.97 грн
В кошику  од. на суму  грн.
SPD02N80C3ATMA1 SPD02N80C3ATMA1 Infineon Technologies Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334 Description: MOSFET N-CH 800V 2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 4540 шт:
термін постачання 21-31 дні (днів)
3+117.03 грн
10+71.30 грн
100+47.63 грн
500+35.18 грн
1000+32.11 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 6624 шт:
термін постачання 21-31 дні (днів)
3+152.72 грн
10+93.91 грн
100+63.63 грн
500+47.55 грн
1000+45.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPD06N80C3ATMA1 SPD06N80C3ATMA1 Infineon Technologies Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 2357 шт:
термін постачання 21-31 дні (днів)
2+166.00 грн
10+102.15 грн
100+69.57 грн
500+52.19 грн
1000+50.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPD08P06PGBTMA1 SPD08P06PGBTMA1 Infineon Technologies Infineon-SPD08P06PG-DS-v01_92-en.pdf?fileId=db3a30431ed1d7b2011f40433a224ec6 Description: MOSFET P-CH 60V 8.83A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.2V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7478 шт:
термін постачання 21-31 дні (днів)
5+66.40 грн
10+51.95 грн
100+35.67 грн
500+26.76 грн
1000+23.67 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPL65R130C7AUMA1 Infineon-IPL65R130C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7977eef9029b
IPL65R130C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 15A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
товару немає в наявності
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IPL65R230C7AUMA1 Infineon-IPL65R230C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e798fa6d80332
IPL65R230C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+65.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPLU300N04S4R8XTMA1 IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t
IPLU300N04S4R8XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+184.97 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT012N08N5ATMA1 Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9
IPT012N08N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+156.48 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
KP236N6165XTMA1 Infineon-KP236_N6165-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af68133600b1a
KP236N6165XTMA1
Виробник: Infineon Technologies
Description: SENSOR 23.93PSIA 4.85V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+238.95 грн
3000+223.69 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SPD02N80C3ATMA1 Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334
SPD02N80C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
SPD04N80C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+42.30 грн
5000+39.44 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
SPD06N80C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SPD08P06PGBTMA1 Infineon-SPD08P06PG-DS-v01_92-en.pdf?fileId=db3a30431ed1d7b2011f40433a224ec6
SPD08P06PGBTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 8.83A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.2V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+23.87 грн
5000+21.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TC275TP64F200WCAKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC275TP64F200WCAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+1754.43 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
TC277TP64F200SCAKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC277TP64F200SCAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
товару немає в наявності
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TLD1120ELXUMA1 Infineon-TLD1120EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e0a8c163245
TLD1120ELXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 360MA 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
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TLE4253GSXUMA3 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA3
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42642GHTSA2 Infineon-TLE4264-2G-DS-v02_60-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d
TLE42642GHTSA2
Виробник: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE42662GSV33HTMA2 Infineon-TLE4266-2-DS-v01_40-EN.pdf?fileId=5546d46259d9a4bf0159f94369cf3e1b
TLE42662GSV33HTMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+60.34 грн
8000+56.97 грн
12000+56.40 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
TLE62086GXUMA2 Infineon-TLE6208_6G-DS-v01_02-en.pdf?fileId=db3a30431c48a312011c4c052072000c&ack=t
TLE62086GXUMA2
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 4.75V-5.5V 28DSO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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TLE7240SLXUMA1 TLE724xSL_PB.pdf
TLE7240SLXUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHANNEL 1:2
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Voltage - Load: 41V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 210mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
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TLE9879QXA40XUMA1 Infineon-TLE9879QXA40-UM-v01_00-EN.pdf?fileId=5546d4624e24005f014e52ca1628452c
TLE9879QXA40XUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Obsolete
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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XE164FM72F80LRABKXUMA1 Infineon-XE164xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1d288804ef&ack=t
XE164FM72F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Not For New Designs
Number of I/O: 76
DigiKey Programmable: Not Verified
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XE167FM72F80LRABKXUMA1 Infineon-XE167xM-DS-v02_01-EN.pdf?fileId=db3a304334c41e910134eb1468cf04e3&ack=t
XE167FM72F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 119
DigiKey Programmable: Not Verified
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XMC1302T038X0064AAXUMA1 XMC1300.pdf
XMC1302T038X0064AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
товару немає в наявності
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C167CRLMHAFXQLA1 Infineon-C167CR-DS-v03_03-en%5B1%5D.pdf?fileId=db3a304412b407950112b41daf9f30b4&ack=t
C167CRLMHAFXQLA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
товару немає в наявності
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XC161CJ16F40FBBFXQMA1 Infineon-XC161_16-DS-v02_04-en.pdf?fileId=db3a304412b407950112b41cd87f2ef8&ack=t
XC161CJ16F40FBBFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
товару немає в наявності
В кошику  од. на суму  грн.
IDW10G120C5BFKSA1 Infineon-20140610_IDW10G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146952e63f869aa
IDW10G120C5BFKSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY SIC 1200V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 17A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R190C7XKSA1 Infineon-IPA65R190C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be94da350082
IPA65R190C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP200N15N3GHKSA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
IPP200N15N3GHKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R125C7XKSA1 Infineon-IPP65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd014209f7e8700375
IPP65R125C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 888 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+298.81 грн
50+164.62 грн
100+155.64 грн
500+116.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
SPA11N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPA20N60C3XKSA1 Infineon-SPP_I_A20N60C3-DS-v03_01-en.pdf?fileId=db3a304318f3fe290119090054e32a20
SPA20N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.7A TO220-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.96 грн
10+192.39 грн
100+135.96 грн
500+104.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BBY5102VH6327XTSA1 bby51series.pdf
BBY5102VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE TUNING 2SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
товару немає в наявності
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BFQ19SH6327XTSA1 Infineon-BFQ19S-DS-v01_01-en.pdf?fileId=db3a30431400ef6801142683f6870630
BFQ19SH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5.5GHZ PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 1W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3dB @ 1.8GHz
Supplier Device Package: PG-SOT89
на замовлення 7759 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.52 грн
13+24.70 грн
25+22.06 грн
100+17.99 грн
250+16.70 грн
500+15.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BSC035N10NS5ATMA1 Infineon-BSC035N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae8b5f3bc1b6f
BSC035N10NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
на замовлення 7090 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+244.85 грн
10+153.70 грн
100+106.99 грн
500+86.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC070N10NS5ATMA1 Infineon-BSC070N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fc62d9d6b3c
BSC070N10NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 13257 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.23 грн
10+92.64 грн
100+62.74 грн
500+46.87 грн
1000+44.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC097N06NSATMA1 Infineon-BSC097N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cdd69b87155
BSC097N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 46A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
на замовлення 21184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.45 грн
10+59.71 грн
100+41.35 грн
500+31.25 грн
1000+27.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSS126H6327XTSA2 Infineon-BSS126-DS-v02_01-en.pdf?fileId=db3a304330f6860601310483af163eba
BSS126H6327XTSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 28224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.82 грн
13+26.38 грн
100+16.86 грн
500+11.97 грн
1000+10.72 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS127H6327XTSA2 Infineon-BSS127-DS-v02_01-en.pdf?fileId=db3a304330f686060131049ef4883edb
BSS127H6327XTSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13158 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.54 грн
18+18.46 грн
100+11.67 грн
500+8.18 грн
1000+7.28 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BSS138NH6327XTSA2 Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb
BSS138NH6327XTSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 83309 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.09 грн
28+11.43 грн
100+7.15 грн
500+4.93 грн
1000+4.36 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS159NH6327XTSA2 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
BSS159NH6327XTSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.84 грн
14+23.34 грн
100+14.87 грн
500+10.50 грн
1000+9.39 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS84PH6327XTSA2 Infineon-BSS84P-DS-v02_07-en.pdf?fileId=db3a304330f68606013118ac7a9b4549
BSS84PH6327XTSA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 110105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.26 грн
30+10.87 грн
100+6.80 грн
500+4.69 грн
1000+4.14 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BSZ097N10NS5ATMA1 Infineon-BSZ097N10NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145d5a1b051648d
BSZ097N10NS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
на замовлення 5313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.21 грн
10+95.99 грн
100+65.09 грн
500+48.70 грн
1000+46.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS50301EJAXUMA1 Infineon-BTS5030-1EJA-DS-v02_20-EN.pdf?fileId=5546d46259d9a4bf015a84f3e686758a
BTS50301EJAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Voltage - Load: 8V ~ 18V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 5661 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.35 грн
10+84.88 грн
25+77.15 грн
100+64.42 грн
250+60.61 грн
500+58.31 грн
1000+55.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS50451EJAXUMA1 Infineon-BTS5045-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa411125b1069
BTS50451EJAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 13242 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+107.07 грн
10+75.21 грн
25+68.29 грн
100+56.92 грн
250+53.49 грн
500+51.42 грн
1000+48.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ESD108B1CSP0201XTSA1 Infineon-ESD108-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d4624b0b249c014b1746e4d05aa8
ESD108B1CSP0201XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 41VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.28pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 27.5W
Power Line Protection: No
Part Status: Active
на замовлення 474550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+9.13 грн
50+6.39 грн
129+2.49 грн
500+2.20 грн
1000+2.01 грн
2000+1.98 грн
5000+1.91 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
ICE3PCS01GXUMA1 Infineon-ICE3PCS01-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67ae8c02b46
ICE3PCS01GXUMA1
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-14
Part Status: Active
Current - Startup: 380 µA
на замовлення 26138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.58 грн
10+73.53 грн
25+66.69 грн
100+55.53 грн
250+52.17 грн
500+50.14 грн
1000+47.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPB020N10N5ATMA1 Infineon-IPB020N10N5-DS-v02_01-en.pdf?fileId=5546d461454603990145d1e190ea6423
IPB020N10N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
на замовлення 7458 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+424.14 грн
10+273.59 грн
100+197.00 грн
500+182.13 грн
В кошику  од. на суму  грн.
IPB180P04P4L02ATMA1 IPB180P04P4L-02_Rev1.4_7-4-19.pdf
IPB180P04P4L02ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
IPD50P04P413ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R380P6BTMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPD60R380P6BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
IPD60R385CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.37 грн
10+123.49 грн
100+84.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
IPD60R3K3C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V
Power Dissipation (Max): 18.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.36 грн
10+45.72 грн
100+29.89 грн
500+21.67 грн
1000+19.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD65R190C7ATMA1 Infineon-IPD65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd014209837c650210
IPD65R190C7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 3585 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+229.08 грн
10+142.99 грн
100+99.14 грн
500+78.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPG20N10S4L22AATMA1 IPG20N10S4L-22A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f76fc25c0a21&ack=t
IPG20N10S4L22AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
на замовлення 20540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.47 грн
10+100.39 грн
100+73.17 грн
500+55.06 грн
1000+53.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL65R130C7AUMA1 Infineon-IPL65R130C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7977eef9029b
IPL65R130C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 15A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+197.54 грн
10+164.17 грн
100+154.83 грн
500+142.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPLU300N04S4R8XTMA1 IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t
IPLU300N04S4R8XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4102 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+463.15 грн
10+299.81 грн
100+218.02 грн
В кошику  од. на суму  грн.
IPT012N08N5ATMA1 Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9
IPT012N08N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+408.37 грн
10+262.88 грн
100+188.84 грн
500+173.09 грн
В кошику  од. на суму  грн.
KP236N6165XTMA1 Infineon-KP236_N6165-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af68133600b1a
KP236N6165XTMA1
Виробник: Infineon Technologies
Description: SENSOR 23.93PSIA 4.85V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10084 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+359.40 грн
5+310.44 грн
10+297.33 грн
25+264.36 грн
50+254.32 грн
100+245.13 грн
500+224.97 грн
В кошику  од. на суму  грн.
SPD02N80C3ATMA1 Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334
SPD02N80C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 4540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.03 грн
10+71.30 грн
100+47.63 грн
500+35.18 грн
1000+32.11 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
SPD04N80C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 6624 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.72 грн
10+93.91 грн
100+63.63 грн
500+47.55 грн
1000+45.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
SPD06N80C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 2357 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.00 грн
10+102.15 грн
100+69.57 грн
500+52.19 грн
1000+50.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPD08P06PGBTMA1 Infineon-SPD08P06PG-DS-v01_92-en.pdf?fileId=db3a30431ed1d7b2011f40433a224ec6
SPD08P06PGBTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 8.83A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.2V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7478 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.40 грн
10+51.95 грн
100+35.67 грн
500+26.76 грн
1000+23.67 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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