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SPD08N50C3ATMA1 SPD08N50C3ATMA1 Infineon Technologies Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+51.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
EVALLEDICL8201F2TOBO1 EVALLEDICL8201F2TOBO1 Infineon Technologies REF-ICL8201_Single_End_Cap_T8.pdf Description: REFERENCE DESIGN ICL8201 T8
Packaging: Box
Voltage - Output: 55V ~ 75V
Voltage - Input: 170 ~ 277 VAC
Current - Output / Channel: 270mA
Utilized IC / Part: ICL8201, IPS65R1K5CE
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4614.85 грн
В кошику  од. на суму  грн.
EVALLEDICL8201F1TOBO1 EVALLEDICL8201F1TOBO1 Infineon Technologies REF-ICL8201_GU10.pdf Description: REFERENCE DESIGN ICL8201 GU10
Packaging: Box
Voltage - Output: 33V ~ 47V
Voltage - Input: 90 ~ 265 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: ICL8201, IPU50R3K0CE
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ICL8201XTSA1 ICL8201XTSA1 Infineon Technologies ICL8201.pdf Description: IC LED DRVR OFFL TRIAC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 27V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6
Dimming: Triac
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
товару немає в наявності
В кошику  од. на суму  грн.
IPD042P03L3GATMA1 IPD042P03L3GATMA1 Infineon Technologies Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425 Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
на замовлення 2442 шт:
термін постачання 21-31 дні (днів)
2+162.49 грн
10+98.80 грн
100+70.33 грн
500+52.76 грн
1000+48.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD053N08N3GATMA1 IPD053N08N3GATMA1 Infineon Technologies Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8 Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 14205 шт:
термін постачання 21-31 дні (днів)
2+158.56 грн
10+112.93 грн
100+87.84 грн
500+77.32 грн
1000+73.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD068P03L3GATMA1 IPD068P03L3GATMA1 Infineon Technologies Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94 Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 70A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7720 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+67.51 грн
10+47.62 грн
100+34.61 грн
500+28.29 грн
1000+27.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD200N15N3GATMA1 IPD200N15N3GATMA1 Infineon Technologies Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
на замовлення 37007 шт:
термін постачання 21-31 дні (днів)
3+124.03 грн
10+101.67 грн
100+80.67 грн
500+71.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50R280CEATMA1 IPD50R280CEATMA1 Infineon Technologies Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae Description: MOSFET N-CH 500V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R1K4C6ATMA1 IPD60R1K4C6ATMA1 Infineon Technologies Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5 Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 19885 шт:
термін постачання 21-31 дні (днів)
4+101.26 грн
10+61.68 грн
100+40.87 грн
500+29.99 грн
1000+27.29 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD60R380C6ATMA1 IPD60R380C6ATMA1 Infineon Technologies Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 27495 шт:
термін постачання 21-31 дні (днів)
3+121.67 грн
10+83.38 грн
100+64.06 грн
500+48.46 грн
1000+46.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD60R450E6ATMA1 IPD60R450E6ATMA1 Infineon Technologies Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30 Description: MOSFET N-CH 600V 9.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R520C6ATMA1 IPD60R520C6ATMA1 Infineon Technologies Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a Description: MOSFET N-CH 600V 8.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600C6ATMA1 IPD60R600C6ATMA1 Infineon Technologies Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 8730 шт:
термін постачання 21-31 дні (днів)
4+83.21 грн
10+59.11 грн
100+46.37 грн
500+37.77 грн
1000+34.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD60R950C6ATMA1 IPD60R950C6ATMA1 Infineon Technologies Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6 Description: MOSFET N-CH 600V 4.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 1583 шт:
термін постачання 21-31 дні (днів)
4+83.21 грн
10+31.29 грн
100+29.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD65R380C6ATMA1 IPD65R380C6ATMA1 Infineon Technologies Infineon-IPD65R380C6-DS-v02_02-en.pdf?fileId=db3a30433efacd9a013f095378172fa3 Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD78CN10NGATMA1 IPD78CN10NGATMA1 Infineon Technologies Infineon-IPP80CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42c2aaf468d Description: MOSFET N-CH 100V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
на замовлення 10918 шт:
термін постачання 21-31 дні (днів)
4+85.56 грн
10+51.48 грн
100+33.80 грн
500+24.61 грн
1000+22.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD90R1K2C3ATMA1 IPD90R1K2C3ATMA1 Infineon Technologies IPD90R1K2C3.pdf Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SPD08N50C3ATMA1 SPD08N50C3ATMA1 Infineon Technologies Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 11869 шт:
термін постачання 21-31 дні (днів)
4+83.21 грн
10+64.10 грн
100+57.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SAE800GXLLA1 SAE800GXLLA1 Infineon Technologies SAE_800.pdf Description: IC AUDIO TONE PROCESSOR DSO8-1
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Audio Tone Processor
Interface: Logic
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 18V
Specifications: 100kHz
Applications: Audio Systems
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Number of Channels: 1
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IPU60R1K0CEAKMA1 IPU60R1K0CEAKMA1 Infineon Technologies Infineon-IPU60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c897d71e96 Description: MOSFET N-CH 600V TO-251-3
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IPU60R1K5CEAKMA1 IPU60R1K5CEAKMA1 Infineon Technologies Infineon-IPU60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e3ff711ea8 Description: MOSFET N-CH 600V TO-251-3
товару немає в наявності
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TLE4476DATMA2 TLE4476DATMA2 Infineon Technologies TLE4476.pdf Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
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IPP60R040C7XKSA1 IPP60R040C7XKSA1 Infineon Technologies Infineon-IPP60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d479ac7c56893 Description: MOSFET N-CH 600V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
1+689.21 грн
50+504.43 грн
100+458.51 грн
500+337.97 грн
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IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 Infineon Technologies Infineon-IPZ60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c9376864008 Description: MOSFET N-CH 600V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 698 шт:
термін постачання 21-31 дні (днів)
1+1146.84 грн
10+1014.95 грн
100+857.19 грн
500+715.61 грн
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IPZ60R099C7XKSA1 IPZ60R099C7XKSA1 Infineon Technologies Infineon-IPZ60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4ca5bbae4110 Description: MOSFET N-CH 600V 22A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
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TLE4274GV85ATMA2 TLE4274GV85ATMA2 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4274GV10ATMA2 TLE4274GV10ATMA2 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 10V 400MA TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 10V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4291EXUMA2 TLE4291EXUMA2 Infineon Technologies Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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IPI120N06S402AKSA2 IPI120N06S402AKSA2 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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IPI90N06S4L04AKSA2 IPI90N06S4L04AKSA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Qualification: AEC-Q101
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IPI80N06S4L07AKSA2 IPI80N06S4L07AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
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CY15B102N-ZS60XAT CY15B102N-ZS60XAT Infineon Technologies Infineon-CY15B102N_2-Mbit_(128K_X_16)_Automotive_F-RAM_Memory-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf917749ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 2MBIT PARALLEL 44TSOP II
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CY15B128Q-SXAT CY15B128Q-SXAT Infineon Technologies Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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CY15B256J-SXA CY15B256J-SXA Infineon Technologies Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
1+534.57 грн
10+478.41 грн
25+463.79 грн
97+415.06 грн
194+404.84 грн
291+398.91 грн
582+382.51 грн
В кошику  од. на суму  грн.
CY15B256Q-SXA CY15B256Q-SXA Infineon Technologies Infineon-CY15B256Q_256_KBIT_(32K_X_8)_AUTOMOTIVE-A_SERIAL_(SPI)_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c6279f3b42a8b Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY5676 CY5676 Infineon Technologies Infineon-Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef9a09b0f90&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PROC BLE
Packaging: Bulk
For Use With/Related Products: PRoC™ BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Obsolete
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1141.35 грн
10+994.31 грн
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CY62167GE30-45ZXI CY62167GE30-45ZXI Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
1+1181.38 грн
10+1054.10 грн
25+1020.83 грн
40+942.06 грн
96+929.95 грн
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CY7C1315KV18-333BZXC CY7C1315KV18-333BZXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY8CKIT-024 CY8CKIT-024 Infineon Technologies Infineon-CY8CKIT_024_CapSense(R)_Proximity_Shield_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef1958d02ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PROXIMITY SHIELD PSOC 4
Packaging: Bulk
Contents: Board(s)
Sensor Type: Proximity
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+4511.23 грн
В кошику  од. на суму  грн.
CY8CKIT-037 CY8CKIT-037 Infineon Technologies Infineon-CY8CKIT-037_PSoC_4_Motor_Control_Evaluation_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa532a1027&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL BOARD FOR PSOC 4
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Embedded: Yes, MCU, 8-Bit
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+16869.05 грн
В кошику  од. на суму  грн.
CY8CKIT-141 CY8CKIT-141 Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PSOC 4 BLE SMA MODULE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
Supplied Contents: Board(s)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+1425.51 грн
В кошику  од. на суму  грн.
CY8CKIT-143 CY8CKIT-143 Infineon Technologies download Description: DEV KIT PSOC 4 BLUETOOTH 4.1 BLE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
Supplied Contents: Board(s)
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
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IPA60R160P6XKSA1 IPA60R160P6XKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
2+220.58 грн
50+135.15 грн
100+121.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R230P6XKSA1 IPA60R230P6XKSA1 Infineon Technologies Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1 Description: MOSFET N-CH 600V 16.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
2+204.09 грн
50+81.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R280P6XKSA1 IPA60R280P6XKSA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
2+184.47 грн
50+88.74 грн
100+84.02 грн
500+60.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R380P6XKSA1 IPA60R380P6XKSA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
3+155.42 грн
50+72.94 грн
100+65.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R099P6XKSA1 IPP60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160P6XKSA1 IPP60R160P6XKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 338 шт:
термін постачання 21-31 дні (днів)
2+255.90 грн
50+124.97 грн
100+113.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R230P6XKSA1 IPP60R230P6XKSA1 Infineon Technologies Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1 Description: MOSFET N-CH 600V 16.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R330P6XKSA1 IPP60R330P6XKSA1 Infineon Technologies IPx60R330P6.pdf Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380P6XKSA1 IPP60R380P6XKSA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099P6XKSA1 IPW60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
1+402.69 грн
30+177.26 грн
120+157.24 грн
510+146.22 грн
В кошику  од. на суму  грн.
IPW60R125P6XKSA1 IPW60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 IPW60R160P6FKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
2+221.36 грн
30+122.66 грн
120+121.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R280P6FKSA1 IPW60R280P6FKSA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
2+200.95 грн
30+109.48 грн
120+99.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 IPD60R380P6ATMA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+46.95 грн
5000+44.19 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPL60R180P6AUMA1 IPL60R180P6AUMA1 Infineon Technologies DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+97.21 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPL60R210P6AUMA1 IPL60R210P6AUMA1 Infineon Technologies DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b Description: MOSFET N-CH 600V 19.2A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+85.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SPD08N50C3ATMA1 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
SPD08N50C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+51.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
EVALLEDICL8201F2TOBO1 REF-ICL8201_Single_End_Cap_T8.pdf
EVALLEDICL8201F2TOBO1
Виробник: Infineon Technologies
Description: REFERENCE DESIGN ICL8201 T8
Packaging: Box
Voltage - Output: 55V ~ 75V
Voltage - Input: 170 ~ 277 VAC
Current - Output / Channel: 270mA
Utilized IC / Part: ICL8201, IPS65R1K5CE
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4614.85 грн
В кошику  од. на суму  грн.
EVALLEDICL8201F1TOBO1 REF-ICL8201_GU10.pdf
EVALLEDICL8201F1TOBO1
Виробник: Infineon Technologies
Description: REFERENCE DESIGN ICL8201 GU10
Packaging: Box
Voltage - Output: 33V ~ 47V
Voltage - Input: 90 ~ 265 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: ICL8201, IPU50R3K0CE
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ICL8201XTSA1 ICL8201.pdf
ICL8201XTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR OFFL TRIAC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 27V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6
Dimming: Triac
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
товару немає в наявності
В кошику  од. на суму  грн.
IPD042P03L3GATMA1 Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425
IPD042P03L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
на замовлення 2442 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.49 грн
10+98.80 грн
100+70.33 грн
500+52.76 грн
1000+48.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD053N08N3GATMA1 Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8
IPD053N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 14205 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+158.56 грн
10+112.93 грн
100+87.84 грн
500+77.32 грн
1000+73.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD068P03L3GATMA1 Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94
IPD068P03L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 70A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7720 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.51 грн
10+47.62 грн
100+34.61 грн
500+28.29 грн
1000+27.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD200N15N3GATMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
IPD200N15N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
на замовлення 37007 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.03 грн
10+101.67 грн
100+80.67 грн
500+71.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50R280CEATMA1 Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae
IPD50R280CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
товару немає в наявності
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IPD60R1K4C6ATMA1 Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5
IPD60R1K4C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 19885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.26 грн
10+61.68 грн
100+40.87 грн
500+29.99 грн
1000+27.29 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD60R380C6ATMA1 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
IPD60R380C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 27495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.67 грн
10+83.38 грн
100+64.06 грн
500+48.46 грн
1000+46.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD60R450E6ATMA1 Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30
IPD60R450E6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
товару немає в наявності
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IPD60R520C6ATMA1 Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a
IPD60R520C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
товару немає в наявності
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IPD60R600C6ATMA1 Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b
IPD60R600C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 8730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.21 грн
10+59.11 грн
100+46.37 грн
500+37.77 грн
1000+34.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD60R950C6ATMA1 Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6
IPD60R950C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 1583 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.21 грн
10+31.29 грн
100+29.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD65R380C6ATMA1 Infineon-IPD65R380C6-DS-v02_02-en.pdf?fileId=db3a30433efacd9a013f095378172fa3
IPD65R380C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
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IPD78CN10NGATMA1 Infineon-IPP80CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42c2aaf468d
IPD78CN10NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
на замовлення 10918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.56 грн
10+51.48 грн
100+33.80 грн
500+24.61 грн
1000+22.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD90R1K2C3ATMA1 IPD90R1K2C3.pdf
IPD90R1K2C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
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SPD08N50C3ATMA1 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
SPD08N50C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 11869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.21 грн
10+64.10 грн
100+57.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SAE800GXLLA1 SAE_800.pdf
SAE800GXLLA1
Виробник: Infineon Technologies
Description: IC AUDIO TONE PROCESSOR DSO8-1
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Audio Tone Processor
Interface: Logic
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 18V
Specifications: 100kHz
Applications: Audio Systems
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Number of Channels: 1
товару немає в наявності
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IPU60R1K0CEAKMA1 Infineon-IPU60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c897d71e96
IPU60R1K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-251-3
товару немає в наявності
В кошику  од. на суму  грн.
IPU60R1K5CEAKMA1 Infineon-IPU60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e3ff711ea8
IPU60R1K5CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-251-3
товару немає в наявності
В кошику  од. на суму  грн.
TLE4476DATMA2 TLE4476.pdf
TLE4476DATMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
товару немає в наявності
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IPP60R040C7XKSA1 Infineon-IPP60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d479ac7c56893
IPP60R040C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+689.21 грн
50+504.43 грн
100+458.51 грн
500+337.97 грн
В кошику  од. на суму  грн.
IPZ60R040C7XKSA1 Infineon-IPZ60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c9376864008
IPZ60R040C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 698 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1146.84 грн
10+1014.95 грн
100+857.19 грн
500+715.61 грн
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IPZ60R099C7XKSA1 Infineon-IPZ60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4ca5bbae4110
IPZ60R099C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
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TLE4274GV85ATMA2 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274GV85ATMA2
Виробник: Infineon Technologies
Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4274GV10ATMA2 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274GV10ATMA2
Виробник: Infineon Technologies
Description: IC REG LIN 10V 400MA TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 10V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4291EXUMA2 Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce
TLE4291EXUMA2
Виробник: Infineon Technologies
Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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IPI120N06S402AKSA2 IPx120N06S4-02.pdf
IPI120N06S402AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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IPI90N06S4L04AKSA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPI90N06S4L04AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Qualification: AEC-Q101
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IPI80N06S4L07AKSA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPI80N06S4L07AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
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CY15B102N-ZS60XAT Infineon-CY15B102N_2-Mbit_(128K_X_16)_Automotive_F-RAM_Memory-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf917749ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B102N-ZS60XAT
Виробник: Infineon Technologies
Description: IC FRAM 2MBIT PARALLEL 44TSOP II
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CY15B128Q-SXAT Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI
CY15B128Q-SXAT
Виробник: Infineon Technologies
Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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CY15B256J-SXA Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B256J-SXA
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+534.57 грн
10+478.41 грн
25+463.79 грн
97+415.06 грн
194+404.84 грн
291+398.91 грн
582+382.51 грн
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CY15B256Q-SXA Infineon-CY15B256Q_256_KBIT_(32K_X_8)_AUTOMOTIVE-A_SERIAL_(SPI)_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c6279f3b42a8b
CY15B256Q-SXA
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY5676 Infineon-Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef9a09b0f90&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY5676
Виробник: Infineon Technologies
Description: DEV KIT PROC BLE
Packaging: Bulk
For Use With/Related Products: PRoC™ BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Obsolete
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1141.35 грн
10+994.31 грн
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CY62167GE30-45ZXI Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE30-45ZXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1181.38 грн
10+1054.10 грн
25+1020.83 грн
40+942.06 грн
96+929.95 грн
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CY7C1315KV18-333BZXC download
CY7C1315KV18-333BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY8CKIT-024 Infineon-CY8CKIT_024_CapSense(R)_Proximity_Shield_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef1958d02ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-024
Виробник: Infineon Technologies
Description: DEV KIT PROXIMITY SHIELD PSOC 4
Packaging: Bulk
Contents: Board(s)
Sensor Type: Proximity
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4511.23 грн
В кошику  од. на суму  грн.
CY8CKIT-037 Infineon-CY8CKIT-037_PSoC_4_Motor_Control_Evaluation_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa532a1027&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-037
Виробник: Infineon Technologies
Description: EVAL BOARD FOR PSOC 4
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Embedded: Yes, MCU, 8-Bit
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16869.05 грн
В кошику  од. на суму  грн.
CY8CKIT-141 Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-141
Виробник: Infineon Technologies
Description: DEV KIT PSOC 4 BLE SMA MODULE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
Supplied Contents: Board(s)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1425.51 грн
В кошику  од. на суму  грн.
CY8CKIT-143 download
CY8CKIT-143
Виробник: Infineon Technologies
Description: DEV KIT PSOC 4 BLUETOOTH 4.1 BLE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
Supplied Contents: Board(s)
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IPA60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPA60R125P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
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IPA60R160P6XKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPA60R160P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+220.58 грн
50+135.15 грн
100+121.14 грн
Мінімальне замовлення: 2
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IPA60R230P6XKSA1 Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1
IPA60R230P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.09 грн
50+81.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R280P6XKSA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPA60R280P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.47 грн
50+88.74 грн
100+84.02 грн
500+60.45 грн
Мінімальне замовлення: 2
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IPA60R380P6XKSA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPA60R380P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.42 грн
50+72.94 грн
100+65.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPP60R099P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160P6XKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPP60R160P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 338 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+255.90 грн
50+124.97 грн
100+113.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R230P6XKSA1 Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1
IPP60R230P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R330P6XKSA1 IPx60R330P6.pdf
IPP60R330P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R380P6XKSA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPP60R380P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPW60R099P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+402.69 грн
30+177.26 грн
120+157.24 грн
510+146.22 грн
В кошику  од. на суму  грн.
IPW60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPW60R125P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R160P6FKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPW60R160P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+221.36 грн
30+122.66 грн
120+121.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R280P6FKSA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPW60R280P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.95 грн
30+109.48 грн
120+99.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPD60R380P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+46.95 грн
5000+44.19 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPL60R180P6AUMA1 DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146
IPL60R180P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+97.21 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPL60R210P6AUMA1 DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b
IPL60R210P6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+85.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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