Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (150131) > Сторінка 2503 з 2503

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IRGB6B60KDPBF IRGB6B60KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222720D199804F1A303005056AB0C4F&compId=irgs6b60kdpbf.pdf?ci_sign=c48c1bbad11229e277a64f8c653a4a111a215a59 description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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ISC019N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PG-TDSON-8
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TLE42744DV50ATMA1 TLE42744DV50ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA7FCED021BA940D6&compId=TLE42744.pdf?ci_sign=6c5be7bae624e68a4294f276e9de8a034660f18b Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
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IPU60R1K5CEAKMA2 INFINEON TECHNOLOGIES Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
75+14.57 грн
Мінімальне замовлення: 75
В кошику  од. на суму  грн.
S80KS2564GACHI040 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS2564GACHI043 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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IRF8910TRPBF IRF8910TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AEDCC02BE6F1A303005056AB0C4F&compId=irf8910pbf.pdf?ci_sign=415f2761abde97419fd0b9fe620849045d4ded83 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
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TD250N16KOF TD250N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859EEEA58C858469&compId=TD250N16KOF.pdf?ci_sign=91ad2419539125bebac73059fb44cbc01854d4b1 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
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TD215N22KOFHPSA1 TD215N22KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859ECA5AF61D2469&compId=TD215N22KOF.pdf?ci_sign=8532a43786a93f543a16582b11024e0af89615bd Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
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TD210N12KOF TD210N12KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859EB41512A98469&compId=TD210N12KOF.pdf?ci_sign=a86820865c1a0c78739c00692e992a2cab54b511 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
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TD250N18KOF TD250N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859EF239B07A2469&compId=TD250N18KOF.pdf?ci_sign=24522337959f5407f41e7cabc507870eac24e972 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
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IRGB6B60KDPBF description pVersion=0046&contRep=ZT&docId=E222720D199804F1A303005056AB0C4F&compId=irgs6b60kdpbf.pdf?ci_sign=c48c1bbad11229e277a64f8c653a4a111a215a59
IRGB6B60KDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.
ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PG-TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
TLE42744DV50ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA7FCED021BA940D6&compId=TLE42744.pdf?ci_sign=6c5be7bae624e68a4294f276e9de8a034660f18b
TLE42744DV50ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
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IPU60R1K5CEAKMA2 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
75+14.57 грн
Мінімальне замовлення: 75
В кошику  од. на суму  грн.
S80KS2564GACHI040 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S80KS2564GACHI043 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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IRF8910TRPBF pVersion=0046&contRep=ZT&docId=E221AEDCC02BE6F1A303005056AB0C4F&compId=irf8910pbf.pdf?ci_sign=415f2761abde97419fd0b9fe620849045d4ded83
IRF8910TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
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TD250N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859EEEA58C858469&compId=TD250N16KOF.pdf?ci_sign=91ad2419539125bebac73059fb44cbc01854d4b1
TD250N16KOF
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
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TD215N22KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859ECA5AF61D2469&compId=TD215N22KOF.pdf?ci_sign=8532a43786a93f543a16582b11024e0af89615bd
TD215N22KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
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TD210N12KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859EB41512A98469&compId=TD210N12KOF.pdf?ci_sign=a86820865c1a0c78739c00692e992a2cab54b511
TD210N12KOF
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
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TD250N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859EF239B07A2469&compId=TD250N18KOF.pdf?ci_sign=24522337959f5407f41e7cabc507870eac24e972
TD250N18KOF
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
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