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CY2544QC016 CY2544QC016 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CYT3DLBBEBQ1BZSGS CYT3DLBBEBQ1BZSGS Infineon Technologies Description: IC MCU 32BIT 4.063MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
1+2650.85 грн
10+2075.47 грн
25+1956.33 грн
96+1716.06 грн
288+1646.73 грн
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CYT3DLABGBQ1AESGS CYT3DLABGBQ1AESGS Infineon Technologies Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+2633.58 грн
10+2061.41 грн
40+1893.00 грн
80+1717.78 грн
240+1645.23 грн
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CYT3DLABABQ1AESGST CYT3DLABABQ1AESGST Infineon Technologies Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
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CYT3DLABGBQ1AESGST CYT3DLABGBQ1AESGST Infineon Technologies Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
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CY8C27243-24SXI CY8C27243-24SXI Infineon Technologies download description Description: IC MCU 8BIT 16KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1 Infineon Technologies IPD040N03LF2SATMA1.pdf Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1 Infineon Technologies IPD040N03LF2SATMA1.pdf Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
на замовлення 1994 шт:
термін постачання 21-31 дні (днів)
5+71.43 грн
10+52.84 грн
100+36.00 грн
500+26.49 грн
1000+24.08 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
S25FL128LAGNFI013 S25FL128LAGNFI013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FL128LAGNFI013 S25FL128LAGNFI013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 3684 шт:
термін постачання 21-31 дні (днів)
3+134.23 грн
10+120.79 грн
25+117.41 грн
50+107.70 грн
100+105.21 грн
250+101.93 грн
500+97.83 грн
1000+95.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IMZA65R040M2HXKSA1 IMZA65R040M2HXKSA1 Infineon Technologies Infineon-IMZA65R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b64ee52dc Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
1+718.25 грн
10+538.88 грн
30+494.36 грн
120+426.65 грн
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FF2600UXTR33T2M1BPSA1 FF2600UXTR33T2M1BPSA1 Infineon Technologies Infineon-FF2600UXTR33T2M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe3442aa75dc7 Description: MOSFET 2N-CH 3300V AG-XHP2K33
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Supplier Device Package: AG-XHP2K33
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F3L200R07W2S5PB95BPSA1 F3L200R07W2S5PB95BPSA1 Infineon Technologies Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113 Description: F3L200R07W2S5PB95BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+7901.53 грн
В кошику  од. на суму  грн.
FF4000UXTR33T2M1BPSA1 FF4000UXTR33T2M1BPSA1 Infineon Technologies DS_FF4000UXTR33T2M1_v1.00_en.pdf Description: MOSFET 2 N-CH 3300V XHP2K17
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Supplier Device Package: AG-XHP2K17
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+274098.85 грн
В кошику  од. на суму  грн.
IRF1407PBF IRF1407PBF Infineon Technologies irf1407pbf.pdf?fileId=5546d462533600a4015355db28c218c8 description Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 10953 шт:
термін постачання 21-31 дні (днів)
2+183.68 грн
50+80.82 грн
100+75.55 грн
500+63.25 грн
1000+63.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE98442QXXUMA2 Infineon Technologies Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509 Description: EMBEDDED_POWER
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
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IRG4BC30FD1PBF IRG4BC30FD1PBF Infineon Technologies irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
185+124.22 грн
Мінімальне замовлення: 185
В кошику  од. на суму  грн.
IRG4BC30FD1PBF IRG4BC30FD1PBF Infineon Technologies irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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CYW43022CUBT CYW43022CUBT Infineon Technologies Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186 Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+350.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CYW43022CUBT CYW43022CUBT Infineon Technologies Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186 Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1+643.68 грн
10+481.66 грн
25+447.07 грн
100+383.92 грн
250+366.91 грн
500+356.67 грн
1000+342.53 грн
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ICE5QR1070AZXKLA1 ICE5QR1070AZXKLA1 Infineon Technologies Infineon-ICE5QRxxxxAx-DS-v02_10-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c Description: AC-DC INTEGRATED POWER STAGE - C
Packaging: Bulk
на замовлення 1956 шт:
термін постачання 21-31 дні (днів)
273+80.26 грн
Мінімальне замовлення: 273
В кошику  од. на суму  грн.
CY90911ASPMC-GS-106E1 CY90911ASPMC-GS-106E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1 Infineon Technologies IGLT65R110D2ATMA1.pdf Description: IGLT65R110D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1 Infineon Technologies IGLT65R110D2ATMA1.pdf Description: IGLT65R110D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 Infineon Technologies Infineon-IQDH29NE2LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c90530b3a0191465169fe380d Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
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IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 Infineon Technologies Infineon-IQDH29NE2LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c90530b3a0191465169fe380d Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
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IPB100N08S207ATMA1 IPB100N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I100N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e4463ae7&ack=t Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8247 шт:
термін постачання 21-31 дні (днів)
140+148.38 грн
Мінімальне замовлення: 140
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IRS2101PBF IRS2101PBF Infineon Technologies irs2101pbf.pdf?fileId=5546d462533600a40153567624e2279d description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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CY8C4248LQI-BL543T CY8C4248LQI-BL543T Infineon Technologies Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
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CY8C4248LQI-BL573T CY8C4248LQI-BL573T Infineon Technologies 4200_BLE_Family_2-22-18.pdf Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C4248BZI-L479 CY8C4248BZI-L479 Infineon Technologies Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14 Description: IC MCU 32BIT 256KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 98
DigiKey Programmable: Not Verified
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CY8C4248BZA-L489 CY8C4248BZA-L489 Infineon Technologies Infineon-CY8C4248_PSoC_TM_4_MCU_PSoC_TM_4200L_Automotive_Based_on_Arm_R_Cortex_R_-M0-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181943068cc0214 Description: IC MCU 32BIT 256KB FLASH 124VFBG
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Grade: Automotive
Number of I/O: 98
Qualification: AEC-Q100
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CY8C4248FNQ-BL583T Infineon Technologies Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
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CY8C4248FNI-BL593T Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C4248BZS-L489T CY8C4248BZS-L489T Infineon Technologies Infineon-CY8C4248_PSoC_TM_4_MCU_PSoC_TM_4200L_Automotive_Based_on_Arm_R_Cortex_R_-M0-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181943068cc0214 Description: IC MCU 32BIT 256KB FLASH 124VFBG
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Grade: Automotive
Number of I/O: 98
Qualification: AEC-Q100
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CY14B256KA-SP45XI CY14B256KA-SP45XI Infineon Technologies Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Bulk
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
19+1238.02 грн
Мінімальне замовлення: 19
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CY14B101KA-SP45XI CY14B101KA-SP45XI Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14B101LA-SP45XIT CY14B101LA-SP45XIT Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+1593.27 грн
Мінімальне замовлення: 1000
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CY14B101LA-SP45XIT CY14B101LA-SP45XIT Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Cut Tape (CT)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+2405.15 грн
10+2055.29 грн
25+1959.71 грн
50+1773.97 грн
100+1711.04 грн
250+1631.16 грн
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CY14B256L-SP45XIT CY14B256L-SP45XIT Infineon Technologies CY14B256L_RevI.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TLE4941CBAMA2 Infineon Technologies Description: SPEED SENS
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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CY7C1061GE-10BV1XI CY7C1061GE-10BV1XI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10ZXIT CY7C1061G30-10ZXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CYB06447BZI-BLD53 CYB06447BZI-BLD53 Infineon Technologies Infineon-PSoC_64_MCU_CYB06447BZI-BLDx_Datasheet_(Preliminary)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9132771ea Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
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SMBT3906SH6327XTSA1 SMBT3906SH6327XTSA1 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
на замовлення 55269 шт:
термін постачання 21-31 дні (днів)
4706+4.14 грн
Мінімальне замовлення: 4706
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IRG7PH50K10D-EPBF IRG7PH50K10D-EPBF Infineon Technologies IRG7PH50K10D%28-E%29PbF.pdf Description: IGBT 1200V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
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IPP044N03LF2SAKSA1 Infineon Technologies Infineon-IPP044N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cce7cd2b69 Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+103.62 грн
10+62.97 грн
100+41.79 грн
500+30.69 грн
1000+27.94 грн
Мінімальне замовлення: 4
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EVALBGA123L4TOBO1 EVALBGA123L4TOBO1 Infineon Technologies Infineon-BGA123L4-DS-v01_00-EN.pdf?fileId=5546d4625fe36784015ffd006b653a7c Description: EVAL BRD ESP32-S3-WROOM-1-N16R8
Packaging: Bulk
For Use With/Related Products: BGA123L4
Frequency: 1.55GHz ~ 1.615GHz
Type: Amplifier
Supplied Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+11251.79 грн
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Infineon Technologies Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
502+41.41 грн
Мінімальне замовлення: 502
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
117+178.06 грн
Мінімальне замовлення: 117
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ISA220280C03LMDSXTMA1 ISA220280C03LMDSXTMA1 Infineon Technologies Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369 Description: ISA220280C03LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
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ISA220280C03LMDSXTMA1 ISA220280C03LMDSXTMA1 Infineon Technologies Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369 Description: ISA220280C03LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
6+62.01 грн
10+37.34 грн
100+24.24 грн
500+17.46 грн
Мінімальне замовлення: 6
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PEB22522FV2.1 PEB22522FV2.1 Infineon Technologies Description: IC MULTI BIT RATE INTEGRATED
Packaging: Bulk
на замовлення 28025 шт:
термін постачання 21-31 дні (днів)
10+2355.23 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CYT4DNJBNCQ1BZSGS CYT4DNJBNCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBNCQ1BZSGST CYT4DNJBNCQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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D2650N24TVFXPSA1 D2650N24TVFXPSA1 Infineon Technologies Infineon-D2650N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42ff14d4e7c Description: DIODE GEN PURP 2.4KV 2650A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2500 A
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
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FS200R07N3E4RB11BOSA1 Infineon Technologies Infineon-FS200R07N3E4R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f496103d258b8 Description: FS200R07 - IGBT MODULE
Packaging: Bulk
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
3+7401.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRG7PH50K10DPBF IRG7PH50K10DPBF Infineon Technologies IRG7PH50K10D%28-E%29PbF.pdf Description: IGBT 1200V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
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CYAT81685-128AS88 CYAT81685-128AS88 Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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IRSM807-045MH IRSM807-045MH Infineon Technologies irsm807-045mh.pdf?fileId=5546d462533600a40153567f11bb2896 Description: IC HALF BRIDGE DRIVER 4A 31PQFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 12V ~ 16.5V
Rds On (Typ): 1.5Ohm
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 35A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
1+329.69 грн
10+211.88 грн
25+183.83 грн
80+146.66 грн
260+140.92 грн
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CY2544QC016 download
CY2544QC016
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CYT3DLBBEBQ1BZSGS
CYT3DLBBEBQ1BZSGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4.063MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2650.85 грн
10+2075.47 грн
25+1956.33 грн
96+1716.06 грн
288+1646.73 грн
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CYT3DLABGBQ1AESGS
CYT3DLABGBQ1AESGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2633.58 грн
10+2061.41 грн
40+1893.00 грн
80+1717.78 грн
240+1645.23 грн
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CYT3DLABABQ1AESGST
CYT3DLABABQ1AESGST
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
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CYT3DLABGBQ1AESGST
CYT3DLABGBQ1AESGST
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
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CY8C27243-24SXI description download
CY8C27243-24SXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
IPD040N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
IPD040N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
на замовлення 1994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.43 грн
10+52.84 грн
100+36.00 грн
500+26.49 грн
1000+24.08 грн
Мінімальне замовлення: 5
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S25FL128LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFI013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FL128LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFI013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 3684 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.23 грн
10+120.79 грн
25+117.41 грн
50+107.70 грн
100+105.21 грн
250+101.93 грн
500+97.83 грн
1000+95.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IMZA65R040M2HXKSA1 Infineon-IMZA65R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b64ee52dc
IMZA65R040M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+718.25 грн
10+538.88 грн
30+494.36 грн
120+426.65 грн
В кошику  од. на суму  грн.
FF2600UXTR33T2M1BPSA1 Infineon-FF2600UXTR33T2M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe3442aa75dc7
FF2600UXTR33T2M1BPSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 3300V AG-XHP2K33
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Supplier Device Package: AG-XHP2K33
товару немає в наявності
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F3L200R07W2S5PB95BPSA1 Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113
F3L200R07W2S5PB95BPSA1
Виробник: Infineon Technologies
Description: F3L200R07W2S5PB95BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7901.53 грн
В кошику  од. на суму  грн.
FF4000UXTR33T2M1BPSA1 DS_FF4000UXTR33T2M1_v1.00_en.pdf
FF4000UXTR33T2M1BPSA1
Виробник: Infineon Technologies
Description: MOSFET 2 N-CH 3300V XHP2K17
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Supplier Device Package: AG-XHP2K17
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+274098.85 грн
В кошику  од. на суму  грн.
IRF1407PBF description irf1407pbf.pdf?fileId=5546d462533600a4015355db28c218c8
IRF1407PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 10953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.68 грн
50+80.82 грн
100+75.55 грн
500+63.25 грн
1000+63.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE98442QXXUMA2 Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509
Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
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IRG4BC30FD1PBF irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f
IRG4BC30FD1PBF
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
185+124.22 грн
Мінімальне замовлення: 185
В кошику  од. на суму  грн.
IRG4BC30FD1PBF irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f
IRG4BC30FD1PBF
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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CYW43022CUBT Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186
CYW43022CUBT
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+350.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CYW43022CUBT Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186
CYW43022CUBT
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+643.68 грн
10+481.66 грн
25+447.07 грн
100+383.92 грн
250+366.91 грн
500+356.67 грн
1000+342.53 грн
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ICE5QR1070AZXKLA1 Infineon-ICE5QRxxxxAx-DS-v02_10-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c
ICE5QR1070AZXKLA1
Виробник: Infineon Technologies
Description: AC-DC INTEGRATED POWER STAGE - C
Packaging: Bulk
на замовлення 1956 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
273+80.26 грн
Мінімальне замовлення: 273
В кошику  од. на суму  грн.
CY90911ASPMC-GS-106E1 download
CY90911ASPMC-GS-106E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1.pdf
IGLT65R110D2ATMA1
Виробник: Infineon Technologies
Description: IGLT65R110D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1.pdf
IGLT65R110D2ATMA1
Виробник: Infineon Technologies
Description: IGLT65R110D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IQDH29NE2LM5CGSCATMA1 Infineon-IQDH29NE2LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c90530b3a0191465169fe380d
IQDH29NE2LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
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IQDH29NE2LM5CGSCATMA1 Infineon-IQDH29NE2LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c90530b3a0191465169fe380d
IQDH29NE2LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
товару немає в наявності
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IPB100N08S207ATMA1 Infineon-IPP_B_I100N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e4463ae7&ack=t
IPB100N08S207ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
140+148.38 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
IRS2101PBF description irs2101pbf.pdf?fileId=5546d462533600a40153567624e2279d
IRS2101PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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CY8C4248LQI-BL543T
CY8C4248LQI-BL543T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
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CY8C4248LQI-BL573T 4200_BLE_Family_2-22-18.pdf
CY8C4248LQI-BL573T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C4248BZI-L479 Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14
CY8C4248BZI-L479
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 98
DigiKey Programmable: Not Verified
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CY8C4248BZA-L489 Infineon-CY8C4248_PSoC_TM_4_MCU_PSoC_TM_4200L_Automotive_Based_on_Arm_R_Cortex_R_-M0-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181943068cc0214
CY8C4248BZA-L489
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Grade: Automotive
Number of I/O: 98
Qualification: AEC-Q100
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CY8C4248FNQ-BL583T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
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CY8C4248FNI-BL593T Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C4248BZS-L489T Infineon-CY8C4248_PSoC_TM_4_MCU_PSoC_TM_4200L_Automotive_Based_on_Arm_R_Cortex_R_-M0-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181943068cc0214
CY8C4248BZS-L489T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Grade: Automotive
Number of I/O: 98
Qualification: AEC-Q100
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CY14B256KA-SP45XI Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B256KA-SP45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Bulk
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+1238.02 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
CY14B101KA-SP45XI download
CY14B101KA-SP45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14B101LA-SP45XIT Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101LA-SP45XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+1593.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY14B101LA-SP45XIT Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101LA-SP45XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Cut Tape (CT)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2405.15 грн
10+2055.29 грн
25+1959.71 грн
50+1773.97 грн
100+1711.04 грн
250+1631.16 грн
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CY14B256L-SP45XIT CY14B256L_RevI.pdf
CY14B256L-SP45XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TLE4941CBAMA2
Виробник: Infineon Technologies
Description: SPEED SENS
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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CY7C1061GE-10BV1XI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE-10BV1XI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10ZXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G30-10ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CYB06447BZI-BLD53 Infineon-PSoC_64_MCU_CYB06447BZI-BLDx_Datasheet_(Preliminary)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9132771ea
CYB06447BZI-BLD53
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
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SMBT3906SH6327XTSA1 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT3906SH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
на замовлення 55269 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4706+4.14 грн
Мінімальне замовлення: 4706
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IRG7PH50K10D-EPBF IRG7PH50K10D%28-E%29PbF.pdf
IRG7PH50K10D-EPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
товару немає в наявності
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IPP044N03LF2SAKSA1 Infineon-IPP044N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cce7cd2b69
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.62 грн
10+62.97 грн
100+41.79 грн
500+30.69 грн
1000+27.94 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EVALBGA123L4TOBO1 Infineon-BGA123L4-DS-v01_00-EN.pdf?fileId=5546d4625fe36784015ffd006b653a7c
EVALBGA123L4TOBO1
Виробник: Infineon Technologies
Description: EVAL BRD ESP32-S3-WROOM-1-N16R8
Packaging: Bulk
For Use With/Related Products: BGA123L4
Frequency: 1.55GHz ~ 1.615GHz
Type: Amplifier
Supplied Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11251.79 грн
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IPU80R1K2P7AKMA1 Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685
IPU80R1K2P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
502+41.41 грн
Мінімальне замовлення: 502
В кошику  од. на суму  грн.
AUIRF1324STRL INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw
AUIRF1324STRL
Виробник: Infineon Technologies
Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
117+178.06 грн
Мінімальне замовлення: 117
В кошику  од. на суму  грн.
ISA220280C03LMDSXTMA1 Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369
ISA220280C03LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA220280C03LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
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ISA220280C03LMDSXTMA1 Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369
ISA220280C03LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA220280C03LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.01 грн
10+37.34 грн
100+24.24 грн
500+17.46 грн
Мінімальне замовлення: 6
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PEB22522FV2.1
PEB22522FV2.1
Виробник: Infineon Technologies
Description: IC MULTI BIT RATE INTEGRATED
Packaging: Bulk
на замовлення 28025 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+2355.23 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CYT4DNJBNCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBNCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
товару немає в наявності
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CYT4DNJBNCQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBNCQ1BZSGST
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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D2650N24TVFXPSA1 Infineon-D2650N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42ff14d4e7c
D2650N24TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 2650A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2500 A
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
товару немає в наявності
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FS200R07N3E4RB11BOSA1 Infineon-FS200R07N3E4R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f496103d258b8
Виробник: Infineon Technologies
Description: FS200R07 - IGBT MODULE
Packaging: Bulk
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+7401.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRG7PH50K10DPBF IRG7PH50K10D%28-E%29PbF.pdf
IRG7PH50K10DPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
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CYAT81685-128AS88 CYAT8168x.pdf
CYAT81685-128AS88
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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IRSM807-045MH irsm807-045mh.pdf?fileId=5546d462533600a40153567f11bb2896
IRSM807-045MH
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 31PQFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 12V ~ 16.5V
Rds On (Typ): 1.5Ohm
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 35A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+329.69 грн
10+211.88 грн
25+183.83 грн
80+146.66 грн
260+140.92 грн
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