Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (150042) > Сторінка 2501 з 2501

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BSZ017NE2LS5IATMA1 INFINEON TECHNOLOGIES Infineon-BSZ017NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f64dff4bf6a99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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BSZ031NE2LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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BSZ0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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BSZ019N03LSATMA1 BSZ019N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF2B639A8A11C&compId=BSZ019N03LS-DTE.pdf?ci_sign=b52c6b23a22669ecf0dae412af6ec741297d374d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DEF45337FA11C&compId=BSZ018NE2LSI-DTE.pdf?ci_sign=acae32995b5cdedb2f43968670a8e2ecbaebfed6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF54612E1A811C&compId=BSZ036NE2LS-DTE.pdf?ci_sign=8d8eb52afd67cfbc94e617d39c7e69ebd12fdb56 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 37W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 37W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.1Ω
Mounting: SMD
Kind of channel: enhancement
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BSZ065N03LSATMA1 BSZ065N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ068N06NSATMA1 BSZ068N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ0902NSATMA1 BSZ0902NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF64ACBBD5E11C&compId=BSZ0902NS-DTE.pdf?ci_sign=e3f4d546ef7f5a8a7c5a699e1250a82958641a81 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ0902NSIATMA1 BSZ0902NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF69D07F63811C&compId=BSZ0902NSI-DTE.PDF?ci_sign=0b340f540cb129b8c2140f98ebd831c45eb7e963 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ099N06LS5ATMA1 BSZ099N06LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D63D1CCEA8143&compId=BSZ099N06LS5.pdf?ci_sign=b11d7fa82b54145d44aecd821201c4ee5bf74603 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 6.9nC
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BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ067N06LS3GATMA1 BSZ067N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1A9561A7011C&compId=BSZ067N06LS3G-DTE.pdf?ci_sign=0f04b9701f32def11c7d73775dd03f2c23e8ccdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ0506NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0C9155E0211C&compId=BSZ0506NS-DTE.pdf?ci_sign=732a43a878218d794f7544f1ee6aa17909633f10 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ014NE2LS5IFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE506FFFB611C&compId=BSZ014NE2LS5IF-DTE.pdf?ci_sign=2eb03ffea6713708ea6c2abffa5148b9ce7c1547 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ035N03LSGATMA1 BSZ035N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E01A11A90811C&compId=BSZ035N03LSG-DTE.pdf?ci_sign=1ba0e64cdb87ea26d109828d06c283da8c193db1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ035N03MSGATMA1 BSZ035N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E03DB8287811C&compId=BSZ035N03MSG-DTE.pdf?ci_sign=b98e83f28ac710aa5ceb6da5acbd2868155cc714 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5F600351953D7&compId=IKW30N65WR5.pdf?ci_sign=fca82b64ffb71e83afcb941304821656608b4787 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 51ns
Turn-off time: 376ns
Pulsed collector current: 90A
Collector current: 30A
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
2+296.34 грн
3+247.27 грн
5+206.96 грн
13+195.34 грн
Мінімальне замовлення: 2
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IKP30N65H5XKSA1 IKP30N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDACF6933851BF&compId=IKP30N65H5-DTE.pdf?ci_sign=2782473722d787c91839e4ac87cde0214d604f30 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Pulsed collector current: 90A
Collector current: 36A
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 INFINEON TECHNOLOGIES Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
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IHW30N65R5XKSA1 IHW30N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC65625A78A73D7&compId=IHW30N65R5.pdf?ci_sign=7f03a628084c42f7eb5565be268fbe684ca2dcbe Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-off time: 228ns
Pulsed collector current: 90A
Collector current: 30A
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD73C566023820&compId=IKB30N65ES5.pdf?ci_sign=671f77607770fe9bac35150f66b692c60c114758 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6EBA99D05EA18&compId=ikw30n65h5.pdf?ci_sign=ef4af8313a33a24ffc5ddf2605e51512f85de775 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 31ns
Turn-off time: 209ns
Pulsed collector current: 90A
Collector current: 35A
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45F1EF19DB1CC&compId=IGP30N65F5-DTE.pdf?ci_sign=d5808c516fe5b312f9544fcad07701861f873cea Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 55A
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
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IKP30N65F5XKSA1 IKP30N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE50433F363820&compId=IKP30N65F5.pdf?ci_sign=fa3d1b47c8af8e134f5a323bdc4d3df0efadea7d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 22ns
Turn-off time: 189ns
Pulsed collector current: 90A
Collector current: 35A
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FF450R12KT4 FF450R12KT4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
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BTS5210G BTS5210G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698792116A06469&compId=BTS5210G.pdf?ci_sign=34a674fb634ae891218c8c260ba20409e1b33986 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
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BTS52004EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5200-4EKA-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa3fee7cd1052 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+116.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD50P03P4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50P03P4L11ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
2500+32.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Protection: undervoltage UVP
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI20I12AFXUMA1 1EDI20I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
товару немає в наявності
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1EDI60I12AFXUMA1 1EDI60I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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T501N70TOHXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB4847A69CF6160C7&compId=T501N70TOHXPSA1.pdf?ci_sign=32f065570e51f46bdba34fdd7f20fb2249109b1d Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 7kV
Max. load current: 1kA
Load current: 640A
Gate current: 350mA
Max. forward impulse current: 13.5kA
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AUIR3314STRL INFINEON TECHNOLOGIES auir3314.pdf?fileId=5546d462533600a4015355a846b8134a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Kind of package: reel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: D2PAK-5
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BBY5302VH6327XTSA1 INFINEON TECHNOLOGIES INFNS15715-1.pdf?t.download=true&u=5oefqw Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
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IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES irf7341pbf.pdf?fileId=5546d462533600a4015355f64f031b63 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
на замовлення 236000 шт:
термін постачання 21-30 дні (днів)
4000+19.53 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
BSZ017NE2LS5IATMA1 Infineon-BSZ017NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f64dff4bf6a99
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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BSZ031NE2LS5ATMA1 Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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BSZ0502NSIATMA1 Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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BSZ019N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF2B639A8A11C&compId=BSZ019N03LS-DTE.pdf?ci_sign=b52c6b23a22669ecf0dae412af6ec741297d374d
BSZ019N03LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ018NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DEF45337FA11C&compId=BSZ018NE2LSI-DTE.pdf?ci_sign=acae32995b5cdedb2f43968670a8e2ecbaebfed6
BSZ018NE2LSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ036NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF54612E1A811C&compId=BSZ036NE2LS-DTE.pdf?ci_sign=8d8eb52afd67cfbc94e617d39c7e69ebd12fdb56
BSZ036NE2LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 37W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 37W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.1Ω
Mounting: SMD
Kind of channel: enhancement
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BSZ065N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870
BSZ065N03LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ068N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec
BSZ068N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ0902NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF64ACBBD5E11C&compId=BSZ0902NS-DTE.pdf?ci_sign=e3f4d546ef7f5a8a7c5a699e1250a82958641a81
BSZ0902NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ0902NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF69D07F63811C&compId=BSZ0902NSI-DTE.PDF?ci_sign=0b340f540cb129b8c2140f98ebd831c45eb7e963
BSZ0902NSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ099N06LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D63D1CCEA8143&compId=BSZ099N06LS5.pdf?ci_sign=b11d7fa82b54145d44aecd821201c4ee5bf74603
BSZ099N06LS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 6.9nC
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BSZ520N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c
BSZ520N15NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ067N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1A9561A7011C&compId=BSZ067N06LS3G-DTE.pdf?ci_sign=0f04b9701f32def11c7d73775dd03f2c23e8ccdf
BSZ067N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ0506NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0C9155E0211C&compId=BSZ0506NS-DTE.pdf?ci_sign=732a43a878218d794f7544f1ee6aa17909633f10
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ014NE2LS5IFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE506FFFB611C&compId=BSZ014NE2LS5IF-DTE.pdf?ci_sign=2eb03ffea6713708ea6c2abffa5148b9ce7c1547
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ035N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E01A11A90811C&compId=BSZ035N03LSG-DTE.pdf?ci_sign=1ba0e64cdb87ea26d109828d06c283da8c193db1
BSZ035N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ035N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E03DB8287811C&compId=BSZ035N03MSG-DTE.pdf?ci_sign=b98e83f28ac710aa5ceb6da5acbd2868155cc714
BSZ035N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB020N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a
IPB020N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB020N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8
IPB020N10N5LF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IKW30N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5F600351953D7&compId=IKW30N65WR5.pdf?ci_sign=fca82b64ffb71e83afcb941304821656608b4787
IKW30N65WR5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 51ns
Turn-off time: 376ns
Pulsed collector current: 90A
Collector current: 30A
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+296.34 грн
3+247.27 грн
5+206.96 грн
13+195.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKP30N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDACF6933851BF&compId=IKP30N65H5-DTE.pdf?ci_sign=2782473722d787c91839e4ac87cde0214d604f30
IKP30N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Pulsed collector current: 90A
Collector current: 36A
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IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
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IHW30N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC65625A78A73D7&compId=IHW30N65R5.pdf?ci_sign=7f03a628084c42f7eb5565be268fbe684ca2dcbe
IHW30N65R5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-off time: 228ns
Pulsed collector current: 90A
Collector current: 30A
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IKB30N65ES5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD73C566023820&compId=IKB30N65ES5.pdf?ci_sign=671f77607770fe9bac35150f66b692c60c114758
IKB30N65ES5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
товару немає в наявності
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IKW30N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6EBA99D05EA18&compId=ikw30n65h5.pdf?ci_sign=ef4af8313a33a24ffc5ddf2605e51512f85de775
IKW30N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 31ns
Turn-off time: 209ns
Pulsed collector current: 90A
Collector current: 35A
товару немає в наявності
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IGP30N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45F1EF19DB1CC&compId=IGP30N65F5-DTE.pdf?ci_sign=d5808c516fe5b312f9544fcad07701861f873cea
IGP30N65F5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 55A
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IKB30N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac
IKB30N65EH5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
товару немає в наявності
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IKP30N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE50433F363820&compId=IKP30N65F5.pdf?ci_sign=fa3d1b47c8af8e134f5a323bdc4d3df0efadea7d
IKP30N65F5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 22ns
Turn-off time: 189ns
Pulsed collector current: 90A
Collector current: 35A
товару немає в наявності
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FF450R12KT4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5
FF450R12KT4
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
товару немає в наявності
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BTS5210G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698792116A06469&compId=BTS5210G.pdf?ci_sign=34a674fb634ae891218c8c260ba20409e1b33986
BTS5210G
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
товару немає в наявності
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BTS52004EKAXUMA1 Infineon-BTS5200-4EKA-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa3fee7cd1052
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+116.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+32.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
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1EDI60N12AFXUMA1 Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a
1EDI60N12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Protection: undervoltage UVP
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI40I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI40I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
товару немає в наявності
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1EDI20I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI20I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
товару немає в наявності
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1EDI60I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI60I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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T501N70TOHXPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB4847A69CF6160C7&compId=T501N70TOHXPSA1.pdf?ci_sign=32f065570e51f46bdba34fdd7f20fb2249109b1d
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 7kV
Max. load current: 1kA
Load current: 640A
Gate current: 350mA
Max. forward impulse current: 13.5kA
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AUIR3314STRL auir3314.pdf?fileId=5546d462533600a4015355a846b8134a
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Kind of package: reel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: D2PAK-5
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BBY5302VH6327XTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
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IRF7341TRPBFXTMA1 irf7341pbf.pdf?fileId=5546d462533600a4015355f64f031b63
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
на замовлення 236000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+19.53 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
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