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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Protection: undervoltage UVP
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI20I12AFXUMA1 1EDI20I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI60I12AFXUMA1 1EDI60I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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T501N70TOHXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB4847A69CF6160C7&compId=T501N70TOHXPSA1.pdf?ci_sign=32f065570e51f46bdba34fdd7f20fb2249109b1d Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 7kV
Max. load current: 1kA
Load current: 640A
Gate current: 350mA
Max. forward impulse current: 13.5kA
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AUIR3314STRL INFINEON TECHNOLOGIES auir3314.pdf?fileId=5546d462533600a4015355a846b8134a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Kind of package: reel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: D2PAK-5
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BBY5302VH6327XTSA1 INFINEON TECHNOLOGIES INFNS15715-1.pdf?t.download=true&u=5oefqw Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
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IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES irf7341pbf.pdf?fileId=5546d462533600a4015355f64f031b63 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
на замовлення 236000 шт:
термін постачання 21-30 дні (днів)
4000+19.45 грн
Мінімальне замовлення: 4000
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IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
3+146.92 грн
10+95.73 грн
20+46.90 грн
54+44.34 грн
150+43.41 грн
Мінімальне замовлення: 3
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IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
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IRF100P219AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 316A
Type of transistor: N-MOSFET
Polarisation: unipolar
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IFX1050GVIO IFX1050GVIO INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FB39823315A259&compId=IFX1050GVIO.pdf?ci_sign=067fabe4fb859a1aad4c08bb9ad538b4b247d661 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
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6EDL04I06PTXUMA1 INFINEON TECHNOLOGIES 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
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6EDL04I06NTXUMA1 INFINEON TECHNOLOGIES 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+168.62 грн
Мінімальне замовлення: 1000
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TC387QP160F300SAEKXUMA2 INFINEON TECHNOLOGIES Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Category: Unclassified
Description: TC387QP160F300SAEKXUMA2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
1000+3522.73 грн
Мінімальне замовлення: 1000
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S26KL128SDABHB023 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
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S26KL128SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
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S26KL256SDABHB020 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
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S26KL256SDABHB023 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
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S26KL256SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
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S26KL512SDABHI020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KL512SDABHI030 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KL512SDABHV023 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KS512SDABHI030 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KS512SDABHV030 INFINEON TECHNOLOGIES CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
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1EDI60N12AFXUMA1 Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a
1EDI60N12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Protection: undervoltage UVP
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI40I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI40I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI20I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI20I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI60I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI60I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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T501N70TOHXPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB4847A69CF6160C7&compId=T501N70TOHXPSA1.pdf?ci_sign=32f065570e51f46bdba34fdd7f20fb2249109b1d
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 7kV
Max. load current: 1kA
Load current: 640A
Gate current: 350mA
Max. forward impulse current: 13.5kA
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AUIR3314STRL auir3314.pdf?fileId=5546d462533600a4015355a846b8134a
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Kind of package: reel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: D2PAK-5
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BBY5302VH6327XTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
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IRF7341TRPBFXTMA1 irf7341pbf.pdf?fileId=5546d462533600a4015355f64f031b63
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
на замовлення 236000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+19.45 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1
IRF1310NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+146.92 грн
10+95.73 грн
20+46.90 грн
54+44.34 грн
150+43.41 грн
Мінімальне замовлення: 3
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IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
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IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 316A
Type of transistor: N-MOSFET
Polarisation: unipolar
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IFX1050GVIO pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FB39823315A259&compId=IFX1050GVIO.pdf?ci_sign=067fabe4fb859a1aad4c08bb9ad538b4b247d661
IFX1050GVIO
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
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6EDL04I06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
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6EDL04I06NTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+168.62 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TC387QP160F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TC387QP160F300SAEKXUMA2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+3522.73 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
S26KL128SDABHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
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S26KL128SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
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S26KL256SDABHB020
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
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S26KL256SDABHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
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S26KL256SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
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S26KL512SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KL512SDABHI030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KL512SDABHV023 download
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KS512SDABHI030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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S26KS512SDABHV030 CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
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