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IDT04S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
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IDT08S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
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IDT16S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
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ICE5QSAGXUMA1 ICE5QSAGXUMA1 Infineon Technologies Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119 Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
товару немає в наявності
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ICE5QSAGXUMA1 ICE5QSAGXUMA1 Infineon Technologies Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119 Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
на замовлення 1772 шт:
термін постачання 21-31 дні (днів)
4+99.09 грн
10+69.71 грн
25+63.27 грн
100+52.62 грн
250+49.41 грн
500+47.47 грн
1000+45.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPT60R028G7XTMA1 IPT60R028G7XTMA1 Infineon Technologies Infineon-IPT60R028G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e82df70e30 Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+520.40 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R080G7XTMA1 IPT60R080G7XTMA1 Infineon Technologies Infineon-IPT60R080G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e8059d0e2c Description: MOSFET N-CH 600V 29A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+233.20 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R050G7XTMA1 IPT60R050G7XTMA1 Infineon Technologies Infineon-IPT60R050G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5974e0e26 Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+293.29 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 IPT60R102G7XTMA1 Infineon Technologies Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
товару немає в наявності
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IPT60R125G7XTMA1 IPT60R125G7XTMA1 Infineon Technologies Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
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IPT60R150G7XTMA1 IPT60R150G7XTMA1 Infineon Technologies Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28 Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
товару немає в наявності
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IPD60R600P7ATMA1 IPD60R600P7ATMA1 Infineon Technologies infineon-ipd60r600p7-datasheet-en.pdf Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+28.41 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 IPD60R360P7ATMA1 Infineon Technologies Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+34.41 грн
5000+30.96 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 IPL60R365P7AUMA1 Infineon Technologies Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
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IPL60R185P7AUMA1 IPL60R185P7AUMA1 Infineon Technologies infineon-ipl60r185p7-ds-en.pdf Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R360P7XKSA1 IPA60R360P7XKSA1 Infineon Technologies Infineon-IPA60R360P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6dde41500b Description: MOSFET N-CHANNEL 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
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IPP60R180P7XKSA1 IPP60R180P7XKSA1 Infineon Technologies Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 931 шт:
термін постачання 21-31 дні (днів)
2+197.35 грн
50+94.03 грн
100+84.69 грн
500+64.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R180P7XKSA1 IPW60R180P7XKSA1 Infineon Technologies infineon-ipw60r180p7-ds-en.pdf Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
2+267.89 грн
30+141.11 грн
120+115.39 грн
510+90.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPZ60R037P7XKSA1 IPZ60R037P7XKSA1 Infineon Technologies Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R360P7SXKSA1 IPAW60R360P7SXKSA1 Infineon Technologies infineon-ipaw60r360p7s-datasheet-en.pdf Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
3+125.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 IPT60R102G7XTMA1 Infineon Technologies Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
1+410.65 грн
10+285.62 грн
100+205.24 грн
500+160.43 грн
1000+158.55 грн
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 IPT60R125G7XTMA1 Infineon Technologies Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 IPT60R150G7XTMA1 Infineon Technologies Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28 Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1304 шт:
термін постачання 21-31 дні (днів)
2+284.69 грн
10+180.33 грн
100+126.87 грн
500+97.64 грн
1000+90.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 IPD60R600P7ATMA1 Infineon Technologies infineon-ipd60r600p7-datasheet-en.pdf Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4+109.17 грн
10+66.31 грн
100+44.10 грн
500+32.45 грн
1000+29.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 IPD60R360P7ATMA1 Infineon Technologies Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 13553 шт:
термін постачання 21-31 дні (днів)
9+40.31 грн
10+37.85 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 IPL60R365P7AUMA1 Infineon Technologies Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
2+172.15 грн
10+112.97 грн
100+80.84 грн
500+62.52 грн
1000+58.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 IPL60R185P7AUMA1 Infineon Technologies infineon-ipl60r185p7-ds-en.pdf Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 2779 шт:
термін постачання 21-31 дні (днів)
2+216.66 грн
10+135.37 грн
100+93.52 грн
500+73.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FM25L04B-GA4 FM25L04B-GA4 Infineon Technologies Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM25L04B-GA4TR FM25L04B-GA4TR Infineon Technologies Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB91248SZPFV-GS-525K5E1 MB91248SZPFV-GS-525K5E1 Infineon Technologies Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB91F362GBPFVS-GK5E2 MB91F362GBPFVS-GK5E2 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR50 RISC
Data Converters: A/D 8x10b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Number of I/O: 160
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SIPC30N60CFDX1SA1 Infineon Technologies Description: MOSFET COOL MOS 600V
товару немає в наявності
В кошику  од. на суму  грн.
SIPC26N60CFDX1SA1 Infineon Technologies Description: MOSFET COOL MOS 600V
Packaging: Box
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRL40SC209 IRL40SC209 Infineon Technologies Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRL40SC228 IRL40SC228 Infineon Technologies infineon-irl40sc228-ds-en.pdf Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+117.12 грн
1600+112.03 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRL40SC209 IRL40SC209 Infineon Technologies Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
2+326.67 грн
10+207.51 грн
100+146.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRL40SC228 IRL40SC228 Infineon Technologies infineon-irl40sc228-ds-en.pdf Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4216 шт:
термін постачання 21-31 дні (днів)
2+328.35 грн
10+209.20 грн
100+148.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS2008STRPBF IRS2008STRPBF Infineon Technologies Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
2500+28.61 грн
5000+26.85 грн
7500+26.50 грн
12500+24.51 грн
17500+24.30 грн
25000+24.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2008STRPBF IRS2008STRPBF Infineon Technologies Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 29636 шт:
термін постачання 21-31 дні (днів)
6+61.30 грн
10+42.21 грн
25+37.98 грн
100+31.28 грн
250+29.21 грн
500+27.96 грн
1000+26.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CH376-80032 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CH376-80033 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI000M S25FL032P0XMFI000M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI010M S25FL032P0XMFI010M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI013M S25FL032P0XMFI013M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFV001M S25FL032P0XMFV001M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL116K0XWEN009 S25FL116K0XWEN009 Infineon Technologies Description: IC FLASH 16MBIT SPI/QUAD 16SOIC
товару немає в наявності
В кошику  од. на суму  грн.
S25FL132K0XBHVS20 S25FL132K0XBHVS20 Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)
6+59.62 грн
10+52.32 грн
25+51.66 грн
40+48.19 грн
80+43.08 грн
338+42.72 грн
676+41.40 грн
1014+39.92 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
S25FL132K0XMFN013 S25FL132K0XMFN013 Infineon Technologies S25FL116K,S25FL132K,S25FL164K.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FL132K0XNFV041 S25FL132K0XNFV041 Infineon Technologies S25FL116K_132K_164K_RevF_2-28-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tube
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (4x4)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
на замовлення 8985 шт:
термін постачання 21-31 дні (днів)
5+83.14 грн
10+72.62 грн
25+71.75 грн
50+66.91 грн
100+59.83 грн
250+59.32 грн
500+57.49 грн
1000+55.43 грн
5000+50.49 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SAL-XC866L-4FRA 5V BE SAL-XC866L-4FRA 5V BE Infineon Technologies Infineon-SAL_XC866-DS-v01_01-cn.pdf?fileId=db3a30433004641301306564e09f0366 Description: IC MCU 8BIT 16KB FLASH 38TSSOP
товару немає в наявності
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IFCM20T65GDXKMA1 IFCM20T65GDXKMA1 Infineon Technologies Infineon-IFCM20T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd2acdfc2c7d Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 650 V
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IFCM30T65GDXKMA1 IFCM30T65GDXKMA1 Infineon Technologies Infineon-IFCM30T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd33e33d2c89 Description: IPM IGBT 650V 30A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
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BSP752RNUMA1 BSP752RNUMA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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MB44C022PW-G-ERE1 Infineon Technologies Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
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MB89537HPFM-G-320-BNDE1 Infineon Technologies Description: IC MCU 8BIT 32KB MROM 64QFP
Packaging: Bulk
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 38
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MB89585BPMC1-G-706-JNE1 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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MB89F538L-101PF-GE1 Infineon Technologies Description: IC MCU 8BIT 48KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 37
DigiKey Programmable: Not Verified
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MB90F562BPFM-G-9002E1 Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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BTF60702EKVXUMA1 BTF60702EKVXUMA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
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MB15E07PFV1-G-BNDE1 Infineon Technologies Description: IC SYNTHESIZER 16SSOP
Packaging: Tube
DigiKey Programmable: Not Verified
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IDT04S60CHKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
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IDT08S60CHKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
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IDT16S60CHKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
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ICE5QSAGXUMA1 Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119
ICE5QSAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
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ICE5QSAGXUMA1 Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119
ICE5QSAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
на замовлення 1772 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.09 грн
10+69.71 грн
25+63.27 грн
100+52.62 грн
250+49.41 грн
500+47.47 грн
1000+45.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPT60R028G7XTMA1 Infineon-IPT60R028G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e82df70e30
IPT60R028G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+520.40 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R080G7XTMA1 Infineon-IPT60R080G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e8059d0e2c
IPT60R080G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 29A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+233.20 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R050G7XTMA1 Infineon-IPT60R050G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5974e0e26
IPT60R050G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+293.29 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a
IPT60R102G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
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IPT60R125G7XTMA1 Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e
IPT60R125G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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IPT60R150G7XTMA1 Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28
IPT60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
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IPD60R600P7ATMA1 infineon-ipd60r600p7-datasheet-en.pdf
IPD60R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.41 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9
IPD60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+34.41 грн
5000+30.96 грн
Мінімальне замовлення: 2500
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IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
IPL60R365P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
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IPL60R185P7AUMA1 infineon-ipl60r185p7-ds-en.pdf
IPL60R185P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
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IPA60R360P7XKSA1 Infineon-IPA60R360P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6dde41500b
IPA60R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
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IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
IPP60R180P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 931 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+197.35 грн
50+94.03 грн
100+84.69 грн
500+64.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R180P7XKSA1 infineon-ipw60r180p7-ds-en.pdf
IPW60R180P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.89 грн
30+141.11 грн
120+115.39 грн
510+90.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPZ60R037P7XKSA1
IPZ60R037P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
товару немає в наявності
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IPAW60R360P7SXKSA1 infineon-ipaw60r360p7s-datasheet-en.pdf
IPAW60R360P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a
IPT60R102G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+410.65 грн
10+285.62 грн
100+205.24 грн
500+160.43 грн
1000+158.55 грн
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e
IPT60R125G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
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IPT60R150G7XTMA1 Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28
IPT60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1304 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+284.69 грн
10+180.33 грн
100+126.87 грн
500+97.64 грн
1000+90.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 infineon-ipd60r600p7-datasheet-en.pdf
IPD60R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.17 грн
10+66.31 грн
100+44.10 грн
500+32.45 грн
1000+29.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9
IPD60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 13553 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+40.31 грн
10+37.85 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
IPL60R365P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.15 грн
10+112.97 грн
100+80.84 грн
500+62.52 грн
1000+58.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 infineon-ipl60r185p7-ds-en.pdf
IPL60R185P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 2779 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+216.66 грн
10+135.37 грн
100+93.52 грн
500+73.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FM25L04B-GA4
FM25L04B-GA4
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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FM25L04B-GA4TR
FM25L04B-GA4TR
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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MB91248SZPFV-GS-525K5E1
MB91248SZPFV-GS-525K5E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
товару немає в наявності
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MB91F362GBPFVS-GK5E2
MB91F362GBPFVS-GK5E2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR50 RISC
Data Converters: A/D 8x10b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Number of I/O: 160
DigiKey Programmable: Not Verified
товару немає в наявності
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SIPC30N60CFDX1SA1
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V
товару немає в наявності
В кошику  од. на суму  грн.
SIPC26N60CFDX1SA1
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V
Packaging: Box
Part Status: Obsolete
товару немає в наявності
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IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
IRL40SC209
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
товару немає в наявності
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IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+117.12 грн
1600+112.03 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
IRL40SC209
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+326.67 грн
10+207.51 грн
100+146.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4216 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+328.35 грн
10+209.20 грн
100+148.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS2008STRPBF Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112
IRS2008STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.61 грн
5000+26.85 грн
7500+26.50 грн
12500+24.51 грн
17500+24.30 грн
25000+24.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2008STRPBF Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112
IRS2008STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 29636 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.30 грн
10+42.21 грн
25+37.98 грн
100+31.28 грн
250+29.21 грн
500+27.96 грн
1000+26.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CH376-80032
Виробник: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
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CH376-80033
Виробник: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
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S25FL032P0XMFI000M
S25FL032P0XMFI000M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
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S25FL032P0XMFI010M
S25FL032P0XMFI010M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
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S25FL032P0XMFI013M
S25FL032P0XMFI013M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
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S25FL032P0XMFV001M
S25FL032P0XMFV001M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
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S25FL116K0XWEN009
S25FL116K0XWEN009
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 16SOIC
товару немає в наявності
В кошику  од. на суму  грн.
S25FL132K0XBHVS20
S25FL132K0XBHVS20
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.62 грн
10+52.32 грн
25+51.66 грн
40+48.19 грн
80+43.08 грн
338+42.72 грн
676+41.40 грн
1014+39.92 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
S25FL132K0XMFN013 S25FL116K,S25FL132K,S25FL164K.pdf
S25FL132K0XMFN013
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FL132K0XNFV041 S25FL116K_132K_164K_RevF_2-28-17.pdf
S25FL132K0XNFV041
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tube
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (4x4)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
на замовлення 8985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+83.14 грн
10+72.62 грн
25+71.75 грн
50+66.91 грн
100+59.83 грн
250+59.32 грн
500+57.49 грн
1000+55.43 грн
5000+50.49 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SAL-XC866L-4FRA 5V BE Infineon-SAL_XC866-DS-v01_01-cn.pdf?fileId=db3a30433004641301306564e09f0366
SAL-XC866L-4FRA 5V BE
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
IFCM20T65GDXKMA1 Infineon-IFCM20T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd2acdfc2c7d
IFCM20T65GDXKMA1
Виробник: Infineon Technologies
Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 650 V
товару немає в наявності
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IFCM30T65GDXKMA1 Infineon-IFCM30T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd33e33d2c89
IFCM30T65GDXKMA1
Виробник: Infineon Technologies
Description: IPM IGBT 650V 30A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
товару немає в наявності
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BSP752RNUMA1
BSP752RNUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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MB44C022PW-G-ERE1
Виробник: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
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MB89537HPFM-G-320-BNDE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 64QFP
Packaging: Bulk
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 38
товару немає в наявності
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MB89585BPMC1-G-706-JNE1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
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MB89F538L-101PF-GE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 48KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 37
DigiKey Programmable: Not Verified
товару немає в наявності
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MB90F562BPFM-G-9002E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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BTF60702EKVXUMA1
BTF60702EKVXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
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MB15E07PFV1-G-BNDE1
Виробник: Infineon Technologies
Description: IC SYNTHESIZER 16SSOP
Packaging: Tube
DigiKey Programmable: Not Verified
товару немає в наявності
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