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IPN50R650CEATMA1 IPN50R650CEATMA1 Infineon Technologies Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8 Description: MOSFET N-CH 500V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN50R800CEATMA1 IPN50R800CEATMA1 Infineon Technologies Infineon-IPN50R800CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae426895b03 Description: MOSFET N-CH 500V 7.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товару немає в наявності
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IPN50R950CEATMA1 IPN50R950CEATMA1 Infineon Technologies Infineon-IPN50R950CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae41e225b00 Description: MOSFET N-CH 500V 6.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN60R1K0CEATMA1 IPN60R1K0CEATMA1 Infineon Technologies Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21 Description: MOSFET N-CH 600V 6.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+16.85 грн
6000+14.94 грн
9000+14.28 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN65R1K5CEATMA1 IPN65R1K5CEATMA1 Infineon Technologies Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50 Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPS60R1K0CEAKMA1 Infineon Technologies Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPS60R2K1CEAKMA1 IPS60R2K1CEAKMA1 Infineon Technologies Infineon-IPS60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537af0473b761e Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IPS60R400CEAKMA1 IPS60R400CEAKMA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 112W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
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IPS60R460CEAKMA1 IPS60R460CEAKMA1 Infineon Technologies Infineon-IPS60R460CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537ed5aa20222e Description: CONSUMER
товару немає в наявності
В кошику  од. на суму  грн.
IPS60R650CEAKMA1 IPS60R650CEAKMA1 Infineon Technologies Infineon-IPS60R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f15f6c6228a Description: CONSUMER
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 82W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
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IPS60R800CEAKMA1 IPS60R800CEAKMA1 Infineon Technologies Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPS65R400CEAKMA1 IPS65R400CEAKMA1 Infineon Technologies Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
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IPS70R600CEAKMA2 Infineon Technologies Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a Description: CONSUMER
товару немає в наявності
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TDK5100FHTMA1 TDK5100FHTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF TX IC ASK 433-435MHZ 10TFSOP
Supplier Device Package: 10-TSSOP
Antenna Connector: Castellation
Current - Transmitting: 11.4mA
Applications: General Purpose
Power - Output: 6.9dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 125°C
Modulation or Protocol: ASK, FSK
Frequency: 433MHz ~ 435MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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2EDN7524GXTMA1 2EDN7524GXTMA1 Infineon Technologies infineon-2edn752x-2edn852x-ds--datasheet-en.pdf Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 20 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+43.88 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
TLE7183FXUMA6 TLE7183FXUMA6 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
TLE7183FXUMA7 TLE7183FXUMA7 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
TLE98422QXXUMA1 TLE98422QXXUMA1 Infineon Technologies Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511 Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (40kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE9842QXXUMA1 TLE9842QXXUMA1 Infineon Technologies Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c Description: IC EMBEDDED POWER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (36kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+162.50 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE98432QXXUMA1 TLE98432QXXUMA1 Infineon Technologies Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b Description: EMBEDDED POWER
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (52kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+159.22 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE9843QXXUMA1 TLE9843QXXUMA1 Infineon Technologies Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+143.48 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE9844QXXUMA1 TLE9844QXXUMA1 Infineon Technologies Infineon-TLE9844QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1c8a87505 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE82452SAAUMA1 TLE82452SAAUMA1 Infineon Technologies TLE82452SA_rev1.0_2013-03-21.pdf Description: IC PWR DRIVER N-CHAN 1:2 DSO-36
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
TLE82453SAAUMA1 TLE82453SAAUMA1 Infineon Technologies TLE82453SA_rev1.0_2013-03-21.pdf Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IPI50R140CPXKSA1 IPI50R140CPXKSA1 Infineon Technologies Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
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SPP20N60S5HKSA1 SPP20N60S5HKSA1 Infineon Technologies SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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IPT65R033G7XTMA1 IPT65R033G7XTMA1 Infineon Technologies Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
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IPT65R105G7XTMA1 IPT65R105G7XTMA1 Infineon Technologies Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23 Description: MOSFET N-CH 650V 24A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPT65R195G7XTMA1 IPT65R195G7XTMA1 Infineon Technologies Infineon-IPT65R195G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902292a4f21 Description: MOSFET N-CH 650V 14A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPZ60R017C7XKSA1 IPZ60R017C7XKSA1 Infineon Technologies Infineon-IPZ60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc275c6b7da2 Description: MOSFET N-CH 600V 109A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
1+1318.12 грн
30+818.54 грн
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BTS141BKSA1 BTS141BKSA1 Infineon Technologies Infineon-BTS141-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84e19f937577 Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-3-1
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V (Max)
Rds On (Typ): 25mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Packaging: Tube
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BTS3050TFATMA1 BTS3050TFATMA1 Infineon Technologies Infineon-BTS3050TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a5186143f59 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 40V (Max)
Input Type: Non-Inverting
Rds On (Typ): 44mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+51.41 грн
Мінімальне замовлення: 2500 шт
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IKCM10B60GAXKMA1 Infineon Technologies IKCM10B60GA.pdf Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Tube
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F475R07W1H3B11ABOMA1 F475R07W1H3B11ABOMA1 Infineon Technologies Infineon-F4_75R07W1H3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043405f2978014071ec07db208c Description: IGBT MOD 650V 37.5A 275W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37.5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
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FS215R04A1E3DBOMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT MODULE
Packaging: Tray
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FS800R07A2E3B31BOSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT MODULES
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TLE72092RAUMA4 Infineon Technologies Infineon-TLE7209_2R-DS-v01_05-en.pdf?fileId=db3a30431f848401011fc76ca8e77a06 Description: IC MOTOR DRIVER 5V-28V 20DSO
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-DSO-20-27
Voltage - Load: 5V ~ 28V
Technology: CMOS
Applications: General Purpose
Voltage - Supply: 5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRAM136-3023B2 Infineon Technologies iram136-3023b.pdf?fileId=5546d462533600a4015355d6b6251854 Description: POWER DRIVER MOD 150V 30A 22SIP
Voltage: 150 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Packaging: Tube
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IRAM538-1065A Infineon Technologies Part_Number_Guide_Web.pdf Description: POWER DRIVER MOD 600V 10A LFRAME
Packaging: Tube
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
товару немає в наявності
 Мінімальне замовлення: 130 шт
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ICB2FL02GXUMA2 ICB2FL02GXUMA2 Infineon Technologies ICB2FL02G.pdf Description: IC BALLAST CNTRL 120KHZ DSO-19
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TLE4250GNTSA1 TLE4250GNTSA1 Infineon Technologies TLE4250G.pdf Description: IC REG LIN POS ADJ 50MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TLE4263GXUMA2 TLE4263GXUMA2 Infineon Technologies Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LINEAR 5V 200MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
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TLE4269GLXUMA2 TLE4269GLXUMA2 Infineon Technologies Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57 Description: IC REG LINEAR 5V 100MA PG-DSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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TLE4275AKSA1 TLE4275AKSA1 Infineon Technologies Infineon-TLE4275V50-DS-v01_07-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b437f96169d5&ack=t Description: IC REG LIN 5V 400MA TO220-5-11
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Not For New Designs
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 500 шт
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TLE4276DV50NTMA1 TLE4276DV50NTMA1 Infineon Technologies TLE4276_rev2.7_2007-10-23.pdf Description: IC REG LINEAR 5V 400MA TO252-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Not For New Designs
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-1
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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TLS202B1MBV33HTMA1 TLS202B1MBV33HTMA1 Infineon Technologies Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220 Description: IC REG LINEAR 3.3V 150MA SCT595
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.57V @ 150mA
PSRR: 63dB (10kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-SCT595-5-1
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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TLS805D1LDV50XUMA1 TLS805D1LDV50XUMA1 Infineon Technologies Infineon-TLS805D1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed79984250 Description: IC REG LINEAR 5V 50MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 16 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 55dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 11.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLS810A1LDV50XUMA1 TLS810A1LDV50XUMA1 Infineon Technologies Infineon-TLS810A1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed85164254 Description: IC REG LIN 5V 100MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 50 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 7.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+43.53 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
TLS810B1LDV33XUMA1 TLS810B1LDV33XUMA1 Infineon Technologies Infineon-TLS810B1xxV33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015921015a8b366e Description: IC REG LINEAR 3.3V 100MA TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 15 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.65V @ 100mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 10 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+44.08 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPD50R520CPATMA1 Infineon Technologies Infineon-IPD50R520CP-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed1dc7e86130d Description: LOW POWER_LEGACY
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SPD02N50C3BTMA1 SPD02N50C3BTMA1 Infineon Technologies Infineon-SPD02N50C3-DS-v02_05-en.pdf?fileId=db3a30432b16d655012b1aa3ea202dac Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO252-3-311
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
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SPD04N60C3ATMA1 SPD04N60C3ATMA1 Infineon Technologies Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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SPP02N60C3XKSA1 SPP02N60C3XKSA1 Infineon Technologies Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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SPP03N60C3XKSA1 SPP03N60C3XKSA1 Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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SPP03N60S5XKSA1 SPP03N60S5XKSA1 Infineon Technologies SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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SPP07N60S5HKSA1 SPP07N60S5HKSA1 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: LOW POWER_LEGACY
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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SPP07N60S5XKSA1 SPP07N60S5XKSA1 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SPP07N65C3XKSA1 SPP07N65C3XKSA1 Infineon Technologies SPP_A_I07N65C3_Rev.1.9.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a3043163797a6011637d56b30003d Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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SPP12N50C3XKSA1 SPP12N50C3XKSA1 Infineon Technologies SPx12N50C3.pdf Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPS02N60C3BKMA1 SPS02N60C3BKMA1 Infineon Technologies SPS02N60C3_rev2.3_2013-07-31.pdf Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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IPN50R650CEATMA1 Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8
IPN50R650CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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IPN50R800CEATMA1 Infineon-IPN50R800CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae426895b03
IPN50R800CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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IPN50R950CEATMA1 Infineon-IPN50R950CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ae41e225b00
IPN50R950CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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IPN60R1K0CEATMA1 Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21
IPN60R1K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+16.85 грн
6000+14.94 грн
9000+14.28 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN65R1K5CEATMA1 Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50
IPN65R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPS60R1K0CEAKMA1 Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224
Виробник: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPS60R2K1CEAKMA1 Infineon-IPS60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537af0473b761e
IPS60R2K1CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IPS60R400CEAKMA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPS60R400CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 112W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IPS60R460CEAKMA1 Infineon-IPS60R460CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537ed5aa20222e
IPS60R460CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
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IPS60R650CEAKMA1 Infineon-IPS60R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f15f6c6228a
IPS60R650CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 82W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
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IPS60R800CEAKMA1 Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590
IPS60R800CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPS65R400CEAKMA1 Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98
IPS65R400CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IPS70R600CEAKMA2 Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a
Виробник: Infineon Technologies
Description: CONSUMER
товару немає в наявності
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TDK5100FHTMA1 Part_Number_Guide_Web.pdf
TDK5100FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Supplier Device Package: 10-TSSOP
Antenna Connector: Castellation
Current - Transmitting: 11.4mA
Applications: General Purpose
Power - Output: 6.9dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 125°C
Modulation or Protocol: ASK, FSK
Frequency: 433MHz ~ 435MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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2EDN7524GXTMA1 infineon-2edn752x-2edn852x-ds--datasheet-en.pdf
2EDN7524GXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 20 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+43.88 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
TLE7183FXUMA6 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA6
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
TLE7183FXUMA7 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA7
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
TLE98422QXXUMA1 Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511
TLE98422QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (40kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE9842QXXUMA1 Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c
TLE9842QXXUMA1
Виробник: Infineon Technologies
Description: IC EMBEDDED POWER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (36kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+162.50 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE98432QXXUMA1 Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b
TLE98432QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (52kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+159.22 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE9843QXXUMA1 Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d
TLE9843QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+143.48 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE9844QXXUMA1 Infineon-TLE9844QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1c8a87505
TLE9844QXXUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE82452SAAUMA1 TLE82452SA_rev1.0_2013-03-21.pdf
TLE82452SAAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-36
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
TLE82453SAAUMA1 TLE82453SA_rev1.0_2013-03-21.pdf
TLE82453SAAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IPI50R140CPXKSA1 Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a
IPI50R140CPXKSA1
Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SPP20N60S5HKSA1 SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b
SPP20N60S5HKSA1
Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
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IPT65R033G7XTMA1 Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f
IPT65R033G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
товару немає в наявності
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IPT65R105G7XTMA1 Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23
IPT65R105G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IPT65R195G7XTMA1 Infineon-IPT65R195G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902292a4f21
IPT65R195G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IPZ60R017C7XKSA1 Infineon-IPZ60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc275c6b7da2
IPZ60R017C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 109A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1318.12 грн
30+818.54 грн
В кошику  од. на суму  грн.
BTS141BKSA1 Infineon-BTS141-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84e19f937577
BTS141BKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-3-1
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V (Max)
Rds On (Typ): 25mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
BTS3050TFATMA1 Infineon-BTS3050TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a5186143f59
BTS3050TFATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 40V (Max)
Input Type: Non-Inverting
Rds On (Typ): 44mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+51.41 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IKCM10B60GAXKMA1 IKCM10B60GA.pdf
Виробник: Infineon Technologies
Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Tube
товару немає в наявності
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F475R07W1H3B11ABOMA1 Infineon-F4_75R07W1H3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043405f2978014071ec07db208c
F475R07W1H3B11ABOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 37.5A 275W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37.5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
товару немає в наявності
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FS215R04A1E3DBOMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
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FS800R07A2E3B31BOSA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IGBT MODULES
товару немає в наявності
В кошику  од. на суму  грн.
TLE72092RAUMA4 Infineon-TLE7209_2R-DS-v01_05-en.pdf?fileId=db3a30431f848401011fc76ca8e77a06
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5V-28V 20DSO
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-DSO-20-27
Voltage - Load: 5V ~ 28V
Technology: CMOS
Applications: General Purpose
Voltage - Supply: 5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRAM136-3023B2 iram136-3023b.pdf?fileId=5546d462533600a4015355d6b6251854
Виробник: Infineon Technologies
Description: POWER DRIVER MOD 150V 30A 22SIP
Voltage: 150 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Packaging: Tube
товару немає в наявності
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IRAM538-1065A Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: POWER DRIVER MOD 600V 10A LFRAME
Packaging: Tube
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
товару немає в наявності
Мінімальне замовлення: 130 шт
В кошику  од. на суму  грн.
ICB2FL02GXUMA2 ICB2FL02G.pdf
ICB2FL02GXUMA2
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 120KHZ DSO-19
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TLE4250GNTSA1 TLE4250G.pdf
TLE4250GNTSA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 50MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TLE4263GXUMA2 Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
товару немає в наявності
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TLE4269GLXUMA2 Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57
TLE4269GLXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
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TLE4275AKSA1 Infineon-TLE4275V50-DS-v01_07-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b437f96169d5&ack=t
TLE4275AKSA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA TO220-5-11
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Not For New Designs
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
TLE4276DV50NTMA1 TLE4276_rev2.7_2007-10-23.pdf
TLE4276DV50NTMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO252-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Not For New Designs
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-1
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLS202B1MBV33HTMA1 Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220
TLS202B1MBV33HTMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.57V @ 150mA
PSRR: 63dB (10kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-SCT595-5-1
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 10000 шт
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TLS805D1LDV50XUMA1 Infineon-TLS805D1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed79984250
TLS805D1LDV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 16 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 55dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 11.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLS810A1LDV50XUMA1 Infineon-TLS810A1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed85164254
TLS810A1LDV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 100MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 50 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 7.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+43.53 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
TLS810B1LDV33XUMA1 Infineon-TLS810B1xxV33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015921015a8b366e
TLS810B1LDV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 15 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.65V @ 100mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 10 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+44.08 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IPD50R520CPATMA1 Infineon-IPD50R520CP-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed1dc7e86130d
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SPD02N50C3BTMA1 Infineon-SPD02N50C3-DS-v02_05-en.pdf?fileId=db3a30432b16d655012b1aa3ea202dac
SPD02N50C3BTMA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO252-3-311
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
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SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
SPD04N60C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SPP02N60C3XKSA1 Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f
SPP02N60C3XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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SPP03N60C3XKSA1 Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b
SPP03N60C3XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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SPP03N60S5XKSA1 SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b
SPP03N60S5XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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SPP07N60S5HKSA1 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N60S5HKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
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SPP07N60S5XKSA1 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N60S5XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
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SPP07N65C3XKSA1 SPP_A_I07N65C3_Rev.1.9.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a3043163797a6011637d56b30003d
SPP07N65C3XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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SPP12N50C3XKSA1 SPx12N50C3.pdf
SPP12N50C3XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPS02N60C3BKMA1 SPS02N60C3_rev2.3_2013-07-31.pdf
SPS02N60C3BKMA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
товару немає в наявності
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