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FD800R17KE3B2NOSA1 FD800R17KE3B2NOSA1 Infineon Technologies Infineon-FD800R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b431012e5304 Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
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FD800R17KF6CB2NOSA1 Infineon Technologies FD800R17KF6C_B2_Rev2.3_2013-11-25.pdf Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 800A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 1300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
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FF1200R17KE3B2NOSA1 Infineon Technologies FF1200R17KE3_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.2kA
NTC Thermistor: No
Supplier Device Package: A-IHV130-3
Current - Collector (Ic) (Max): 1700 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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FF600R12KE3NOSA1 Infineon Technologies FF600R12KE3_Rev2.0_2002-07-30.pdf Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
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FF600R17KF6CB2NOSA1 Infineon Technologies FF600R17KF6C_B2_Rev2.2_2013-11-25.pdf Description: IGBT MODULE 1700V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 600A
NTC Thermistor: No
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
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FF800R12KL4CNOSA1 Infineon Technologies FF800R12KL4C_Rev3.1_2013-10-02.pdf Description: IGBT MODULE 1200V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: AG-PRIME2
Part Status: Obsolete
Current - Collector (Ic) (Max): 1250 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
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FF800R17KE3B2NOSA1 Infineon Technologies FF800R17KE3_B2_Rev2.2_2013-04-04.pdf Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: A-IHV130-3
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
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DF200R12W1H3FB11BOMA1 Infineon Technologies Infineon-DF200R12W1H3F_B11-DS-v03_00-EN.pdf?fileId=5546d462525dbac401530dd302b07cd9 Description: IGBT MOD 1200V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
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DF80R12W2H3FB11BPSA1 DF80R12W2H3FB11BPSA1 Infineon Technologies Infineon-DF80R12W2H3F_B11-DS-v02_00-en_de.pdf?fileId=db3a30433b47825b013b8e6d78e27385 Description: IGBT MOD 1200V 20A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+5421.36 грн
В кошику  од. на суму  грн.
F43L50R07W2H3FB11BPSA2 F43L50R07W2H3FB11BPSA2 Infineon Technologies Infineon-F4-3L50R07W2H3F_B11-DataSheet-v03_01-EN.pdf?fileId=5546d4625bd71aa0015bfb712d9c6e9e Description: IGBT MODULE 650V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+4708.54 грн
В кошику  од. на суму  грн.
FS3L30R07W2H3FB11BPSA2 FS3L30R07W2H3FB11BPSA2 Infineon Technologies Infineon-FS3L30R07W2H3F_B11-DS-v3_1-en_de.pdf?fileId=db3a30433fe811c7013fec1c12383cd9 Description: IGBT MOD 650V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+4761.98 грн
В кошику  од. на суму  грн.
FS3L50R07W2H3FB11BPSA1 FS3L50R07W2H3FB11BPSA1 Infineon Technologies Infineon-FS3L50R07W2H3F_B11-DS-v03_02-EN.pdf?fileId=db3a30433fe811c7013fec12b85d3c49 Description: IGBT MOD 650V 50A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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FS3L30R07W2H3FB11BPSA1 Infineon Technologies FS3L30R07W2H3F_B11_Rev3.0_2014-07-22.pdf Description: MOD DIODE BRIDGE EASY2B-2-1
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CP8173BTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173CTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174ATT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174BTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176ATT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176BTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173BT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173CT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174AT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174BT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176BT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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5962F1123501QXA Infineon Technologies CYRS1049DV33_RevF_Nov17,14.pdf Description: IC SRAM 4MBIT PAR 36CFLATPACK
Packaging: Tube
Package / Case: 36-CFlatPack
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Clock Frequency: 83 MHz
Memory Format: SRAM
Supplier Device Package: 36-Ceramic FlatPack
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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TLE6251DSXUMA2 TLE6251DSXUMA2 Infineon Technologies Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Not For New Designs
на замовлення 25900 шт:
термін постачання 21-31 дні (днів)
3+156.21 грн
10+111.55 грн
25+101.75 грн
100+85.40 грн
250+80.58 грн
500+77.68 грн
1000+74.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE72592GEXUMA4 TLE72592GEXUMA4 Infineon Technologies Infineon-TLE7259-2GE-DS-v01_50-EN.pdf?fileId=5546d46259d9a4bf015a3d11de035e87 Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
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TLE72593GEXUMA3 TLE72593GEXUMA3 Infineon Technologies Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
на замовлення 7529 шт:
термін постачання 21-31 дні (днів)
4+87.15 грн
10+61.20 грн
25+55.36 грн
100+45.96 грн
250+43.11 грн
500+41.38 грн
1000+39.31 грн
Мінімальне замовлення: 4
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CY90F457PMCR-G-N9E1 CY90F457PMCR-G-N9E1 Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 48LQFP
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TLE4278GNT TLE4278GNT Infineon Technologies Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f Description: IC REG LINEAR 5V 150MA DSO14-30
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BGS13SN9E6327XTSA1 BGS13SN9E6327XTSA1 Infineon Technologies Description: IC RF SWITCH SP3T TSNP
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BTS54220LBFXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
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BTS56033LBAXUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
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TLE42694GMXUMA2 TLE42694GMXUMA2 Infineon Technologies Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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TLE42794GMXUMA2 TLE42794GMXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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TLE62512GXUMA3 TLE62512GXUMA3 Infineon Technologies Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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TLE62513GXUMA2 TLE62513GXUMA2 Infineon Technologies Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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В кошику  од. на суму  грн.
TLE42694GMXUMA2 TLE42694GMXUMA2 Infineon Technologies Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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TLE42794GMXUMA2 TLE42794GMXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE62512GXUMA3 TLE62512GXUMA3 Infineon Technologies Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
2+203.90 грн
10+146.78 грн
25+134.37 грн
100+113.28 грн
250+107.18 грн
500+103.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE62513GXUMA2 TLE62513GXUMA2 Infineon Technologies Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
IDC08S120EX1SA3 Infineon Technologies IDC08S120E_Ed2.2_9-6-12.pdf Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
IDC08S120EX7SA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ0909NDXTMA1 BSZ0909NDXTMA1 Infineon Technologies Infineon-BSZ0909ND-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f857c3300399 Description: MOSFET 2N-CH 30V 20A WISON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
товару немає в наявності
В кошику  од. на суму  грн.
IRUPFC2 Infineon Technologies Infineon-aneval_201511_pl16_012-AN-v02_00-EN.pdf?fileId=5546d462533600a40153559ff7761263 Description: KIT DES PFC
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: IRS2505L
Supplied Contents: Board(s)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
IR3883MTRPBF IR3883MTRPBF Infineon Technologies Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+51.86 грн
6000+48.85 грн
9000+48.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IR3883MTRPBF IR3883MTRPBF Infineon Technologies Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 11796 шт:
термін постачання 21-31 дні (днів)
4+105.24 грн
10+74.18 грн
25+67.33 грн
100+56.06 грн
250+52.67 грн
500+50.63 грн
1000+48.14 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPS040N03LGAKMA1 IPS040N03LGAKMA1 Infineon Technologies IPx040N03L_G_rev2.1_2010-04-07.pdf Description: MOSFET N-CH 30V 90A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS050N03LGBKMA1 IPS050N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 50A TO251-3
товару немає в наявності
В кошику  од. на суму  грн.
IPS060N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS075N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS090N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 40A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R1K5CEAUMA1 IPD60R1K5CEAUMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)
6+58.37 грн
10+38.16 грн
100+24.80 грн
500+17.86 грн
1000+16.12 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPD50R280CEAUMA1 IPD50R280CEAUMA1 Infineon Technologies Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 4155 шт:
термін постачання 21-31 дні (днів)
3+141.41 грн
10+91.60 грн
100+68.30 грн
500+51.07 грн
1000+46.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50R500CEAUMA1 IPD50R500CEAUMA1 Infineon Technologies dgdl?fileId=db3a3043382e83730138514ff7881004 Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 15176 шт:
термін постачання 21-31 дні (днів)
9+40.29 грн
10+38.24 грн
100+33.60 грн
500+26.91 грн
1000+24.45 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRL60HS118 IRL60HS118 Infineon Technologies Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193 Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
4000+24.52 грн
8000+22.69 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL80HS120 IRL80HS120 Infineon Technologies Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191 Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+26.81 грн
8000+25.26 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL60HS118 IRL60HS118 Infineon Technologies Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193 Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 30802 шт:
термін постачання 21-31 дні (днів)
4+93.73 грн
10+49.40 грн
100+39.94 грн
500+29.26 грн
1000+26.61 грн
2000+24.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDK03G65C5XTMA2 IDK03G65C5XTMA2 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
товару немає в наявності
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IDH02G65C5XKSA2 IDH02G65C5XKSA2 Infineon Technologies Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
товару немає в наявності
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FD800R17KE3B2NOSA1 Infineon-FD800R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b431012e5304
FD800R17KE3B2NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
товару немає в наявності
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FD800R17KF6CB2NOSA1 FD800R17KF6C_B2_Rev2.3_2013-11-25.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 800A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 1300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
товару немає в наявності
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FF1200R17KE3B2NOSA1 FF1200R17KE3_B2_Rev2.1_2013-11-25.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.2kA
NTC Thermistor: No
Supplier Device Package: A-IHV130-3
Current - Collector (Ic) (Max): 1700 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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FF600R12KE3NOSA1 FF600R12KE3_Rev2.0_2002-07-30.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
товару немає в наявності
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FF600R17KF6CB2NOSA1 FF600R17KF6C_B2_Rev2.2_2013-11-25.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 600A
NTC Thermistor: No
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
товару немає в наявності
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FF800R12KL4CNOSA1 FF800R12KL4C_Rev3.1_2013-10-02.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: AG-PRIME2
Part Status: Obsolete
Current - Collector (Ic) (Max): 1250 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
товару немає в наявності
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FF800R17KE3B2NOSA1 FF800R17KE3_B2_Rev2.2_2013-04-04.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: A-IHV130-3
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
товару немає в наявності
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DF200R12W1H3FB11BOMA1 Infineon-DF200R12W1H3F_B11-DS-v03_00-EN.pdf?fileId=5546d462525dbac401530dd302b07cd9
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
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DF80R12W2H3FB11BPSA1 Infineon-DF80R12W2H3F_B11-DS-v02_00-en_de.pdf?fileId=db3a30433b47825b013b8e6d78e27385
DF80R12W2H3FB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 20A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5421.36 грн
В кошику  од. на суму  грн.
F43L50R07W2H3FB11BPSA2 Infineon-F4-3L50R07W2H3F_B11-DataSheet-v03_01-EN.pdf?fileId=5546d4625bd71aa0015bfb712d9c6e9e
F43L50R07W2H3FB11BPSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4708.54 грн
В кошику  од. на суму  грн.
FS3L30R07W2H3FB11BPSA2 Infineon-FS3L30R07W2H3F_B11-DS-v3_1-en_de.pdf?fileId=db3a30433fe811c7013fec1c12383cd9
FS3L30R07W2H3FB11BPSA2
Виробник: Infineon Technologies
Description: IGBT MOD 650V 30A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4761.98 грн
В кошику  од. на суму  грн.
FS3L50R07W2H3FB11BPSA1 Infineon-FS3L50R07W2H3F_B11-DS-v03_02-EN.pdf?fileId=db3a30433fe811c7013fec12b85d3c49
FS3L50R07W2H3FB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 50A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
товару немає в наявності
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FS3L30R07W2H3FB11BPSA1 FS3L30R07W2H3F_B11_Rev3.0_2014-07-22.pdf
Виробник: Infineon Technologies
Description: MOD DIODE BRIDGE EASY2B-2-1
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CP8173BTT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173CTT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174ATT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174BTT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176ATT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176BTT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173BT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CP8173CT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174AT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CP8174BT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CP8176BT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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5962F1123501QXA CYRS1049DV33_RevF_Nov17,14.pdf
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PAR 36CFLATPACK
Packaging: Tube
Package / Case: 36-CFlatPack
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Clock Frequency: 83 MHz
Memory Format: SRAM
Supplier Device Package: 36-Ceramic FlatPack
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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TLE6251DSXUMA2 Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e
TLE6251DSXUMA2
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Not For New Designs
на замовлення 25900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.21 грн
10+111.55 грн
25+101.75 грн
100+85.40 грн
250+80.58 грн
500+77.68 грн
1000+74.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE72592GEXUMA4 Infineon-TLE7259-2GE-DS-v01_50-EN.pdf?fileId=5546d46259d9a4bf015a3d11de035e87
TLE72592GEXUMA4
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
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TLE72593GEXUMA3 Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a
TLE72593GEXUMA3
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
на замовлення 7529 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.15 грн
10+61.20 грн
25+55.36 грн
100+45.96 грн
250+43.11 грн
500+41.38 грн
1000+39.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY90F457PMCR-G-N9E1
CY90F457PMCR-G-N9E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
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TLE4278GNT Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f
TLE4278GNT
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 150MA DSO14-30
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BGS13SN9E6327XTSA1
BGS13SN9E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP3T TSNP
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BTS54220LBFXUMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
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BTS56033LBAXUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
Виробник: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
товару немає в наявності
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TLE42694GMXUMA2 Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53
TLE42694GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
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TLE42794GMXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
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TLE62512GXUMA3 Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE62512GXUMA3
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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TLE62513GXUMA2 Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5
TLE62513GXUMA2
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
товару немає в наявності
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TLE42694GMXUMA2 Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53
TLE42694GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
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TLE42794GMXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
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TLE62512GXUMA3 Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE62512GXUMA3
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.90 грн
10+146.78 грн
25+134.37 грн
100+113.28 грн
250+107.18 грн
500+103.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE62513GXUMA2 Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5
TLE62513GXUMA2
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
товару немає в наявності
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IDC08S120EX1SA3 IDC08S120E_Ed2.2_9-6-12.pdf
Виробник: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
товару немає в наявності
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IDC08S120EX7SA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
товару немає в наявності
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BSZ0909NDXTMA1 Infineon-BSZ0909ND-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f857c3300399
BSZ0909NDXTMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 20A WISON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
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IRUPFC2 Infineon-aneval_201511_pl16_012-AN-v02_00-EN.pdf?fileId=5546d462533600a40153559ff7761263
Виробник: Infineon Technologies
Description: KIT DES PFC
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: IRS2505L
Supplied Contents: Board(s)
Part Status: Active
товару немає в наявності
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IR3883MTRPBF Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c
IR3883MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+51.86 грн
6000+48.85 грн
9000+48.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IR3883MTRPBF Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c
IR3883MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 11796 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.24 грн
10+74.18 грн
25+67.33 грн
100+56.06 грн
250+52.67 грн
500+50.63 грн
1000+48.14 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPS040N03LGAKMA1 IPx040N03L_G_rev2.1_2010-04-07.pdf
IPS040N03LGAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
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IPS050N03LGBKMA1 Part_Number_Guide_Web.pdf
IPS050N03LGBKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 50A TO251-3
товару немає в наявності
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IPS060N03LGBKMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
товару немає в наявності
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IPS075N03LGBKMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товару немає в наявності
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IPS090N03LGBKMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 40A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
товару немає в наявності
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IPD60R1K5CEAUMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.37 грн
10+38.16 грн
100+24.80 грн
500+17.86 грн
1000+16.12 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPD50R280CEAUMA1 Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae
IPD50R280CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 4155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.41 грн
10+91.60 грн
100+68.30 грн
500+51.07 грн
1000+46.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50R500CEAUMA1 dgdl?fileId=db3a3043382e83730138514ff7881004
IPD50R500CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 15176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+40.29 грн
10+38.24 грн
100+33.60 грн
500+26.91 грн
1000+24.45 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRL60HS118 Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193
IRL60HS118
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+24.52 грн
8000+22.69 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL80HS120 Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191
IRL80HS120
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+26.81 грн
8000+25.26 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL60HS118 Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193
IRL60HS118
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 30802 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.73 грн
10+49.40 грн
100+39.94 грн
500+29.26 грн
1000+26.61 грн
2000+24.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDK03G65C5XTMA2 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
товару немає в наявності
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IDH02G65C5XKSA2 Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb
IDH02G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
товару немає в наявності
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