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IPT60R102G7XTMA1 IPT60R102G7XTMA1 Infineon Technologies Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 IPT60R125G7XTMA1 Infineon Technologies Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 IPT60R150G7XTMA1 Infineon Technologies Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28 Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 IPD60R600P7ATMA1 Infineon Technologies infineon-ipd60r600p7-datasheet-en.pdf Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+26.21 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 IPD60R360P7ATMA1 Infineon Technologies Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+44.16 грн
5000+39.62 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 IPL60R365P7AUMA1 Infineon Technologies Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 IPL60R185P7AUMA1 Infineon Technologies infineon-ipl60r185p7-ds-en.pdf Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPA60R360P7XKSA1 IPA60R360P7XKSA1 Infineon Technologies Infineon-IPA60R360P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6dde41500b Description: MOSFET N-CHANNEL 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
3+148.78 грн
50+69.17 грн
100+61.96 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPP60R180P7XKSA1 IPP60R180P7XKSA1 Infineon Technologies Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 9520 шт:
термін постачання 21-31 дні (днів)
2+205.35 грн
50+97.96 грн
100+88.28 грн
500+66.92 грн
1000+61.81 грн
2000+57.50 грн
5000+51.99 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPW60R180P7XKSA1 IPW60R180P7XKSA1 Infineon Technologies infineon-ipw60r180p7-ds-en.pdf Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 579 шт:
термін постачання 21-31 дні (днів)
2+223.17 грн
30+117.10 грн
120+95.47 грн
510+74.70 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPZ60R037P7XKSA1 IPZ60R037P7XKSA1 Infineon Technologies Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R360P7SXKSA1 IPAW60R360P7SXKSA1 Infineon Technologies infineon-ipaw60r360p7s-datasheet-en.pdf Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 IPT60R102G7XTMA1 Infineon Technologies Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
на замовлення 1005 шт:
термін постачання 21-31 дні (днів)
1+371.96 грн
10+238.34 грн
100+170.36 грн
500+143.37 грн
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 IPT60R125G7XTMA1 Infineon Technologies Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 IPT60R150G7XTMA1 Infineon Technologies Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28 Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1299 шт:
термін постачання 21-31 дні (днів)
2+266.57 грн
10+168.79 грн
100+118.76 грн
500+91.40 грн
1000+84.95 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 IPD60R600P7ATMA1 Infineon Technologies infineon-ipd60r600p7-datasheet-en.pdf Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4+100.74 грн
10+61.19 грн
100+40.69 грн
500+29.94 грн
1000+27.29 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 IPD60R360P7ATMA1 Infineon Technologies Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 6751 шт:
термін постачання 21-31 дні (днів)
2+157.31 грн
10+96.63 грн
100+65.11 грн
500+48.41 грн
1000+44.33 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 IPL60R365P7AUMA1 Infineon Technologies Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
2+158.86 грн
10+104.25 грн
100+74.60 грн
500+57.69 грн
1000+53.78 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 IPL60R185P7AUMA1 Infineon Technologies infineon-ipl60r185p7-ds-en.pdf Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 2779 шт:
термін постачання 21-31 дні (днів)
2+199.93 грн
10+124.92 грн
100+86.29 грн
500+67.47 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FM25L04B-GA4 FM25L04B-GA4 Infineon Technologies Description: IC FRAM 4KBIT SPI 8SOIC
DigiKey Programmable: Not Verified
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FRAM
товару немає в наявності
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FM25L04B-GA4TR FM25L04B-GA4TR Infineon Technologies Description: IC FRAM 4KBIT SPI 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
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MB91248SZPFV-GS-525K5E1 MB91248SZPFV-GS-525K5E1 Infineon Technologies Description: IC MCU 32BIT 256KB MROM 144LQFP
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LCD, PWM, WDT
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x8/10b
Core Processor: FR60Lite RISC
товару немає в наявності
В кошику  од. на суму  грн.
MB91F362GBPFVS-GK5E2 MB91F362GBPFVS-GK5E2 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 208QFP
Program Memory Size: 512KB (512K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 160
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x10b; D/A 2x10b
Core Processor: FR50 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 20K x 8
товару немає в наявності
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SIPC30N60CFDX1SA1 Infineon Technologies Description: MOSFET COOL MOS 600V
товару немає в наявності
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SIPC26N60CFDX1SA1 Infineon Technologies Description: MOSFET COOL MOS 600V
Packaging: Box
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRL40SC209 IRL40SC209 Infineon Technologies Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+116.31 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL40SC228 IRL40SC228 Infineon Technologies infineon-irl40sc228-ds-en.pdf Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+147.17 грн
1600+133.07 грн
2400+131.47 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL40SC209 IRL40SC209 Infineon Technologies Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 806 шт:
термін постачання 21-31 дні (днів)
1+316.94 грн
10+201.63 грн
100+142.75 грн
В кошику  од. на суму  грн.
IRL40SC228 IRL40SC228 Infineon Technologies infineon-irl40sc228-ds-en.pdf Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4212 шт:
термін постачання 21-31 дні (днів)
1+389.78 грн
10+249.83 грн
100+178.80 грн
В кошику  од. на суму  грн.
IRS2008STRPBF IRS2008STRPBF Infineon Technologies infineon-irs2008s-m-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+34.75 грн
5000+32.63 грн
7500+32.22 грн
12500+29.80 грн
17500+29.55 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IRS2008STRPBF IRS2008STRPBF Infineon Technologies infineon-irs2008s-m-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 22063 шт:
термін постачання 21-31 дні (днів)
5+73.62 грн
10+50.97 грн
25+45.91 грн
100+37.90 грн
250+35.42 грн
500+33.93 грн
1000+32.17 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
CH376-80032 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
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CH376-80033 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
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S25FL032P0XMFI000M S25FL032P0XMFI000M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
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S25FL032P0XMFI010M S25FL032P0XMFI010M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
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S25FL032P0XMFI013M S25FL032P0XMFI013M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
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S25FL032P0XMFV001M S25FL032P0XMFV001M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
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S25FL116K0XWEN009 S25FL116K0XWEN009 Infineon Technologies Description: IC FLASH 16MBIT SPI/QUAD 16SOIC
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S25FL132K0XBHVS20 S25FL132K0XBHVS20 Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)
6+55.02 грн
10+48.28 грн
25+47.67 грн
40+44.47 грн
80+39.75 грн
338+39.42 грн
676+38.20 грн
1014+36.83 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
S25FL132K0XMFN013 S25FL132K0XMFN013 Infineon Technologies S25FL116K,S25FL132K,S25FL164K.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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S25FL132K0XNFV041 S25FL132K0XNFV041 Infineon Technologies S25FL116K_132K_164K_RevF_2-28-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8USON
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-USON (4x4)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Tube
на замовлення 8985 шт:
термін постачання 21-31 дні (днів)
5+76.72 грн
10+67.01 грн
25+66.20 грн
50+61.74 грн
100+55.21 грн
250+54.74 грн
500+53.05 грн
1000+51.15 грн
5000+46.59 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
SAL-XC866L-4FRA 5V BE SAL-XC866L-4FRA 5V BE Infineon Technologies Infineon-SAL_XC866-DS-v01_01-cn.pdf?fileId=db3a30433004641301306564e09f0366 Description: IC MCU 8BIT 16KB FLASH 38TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
IFCM20T65GDXKMA1 IFCM20T65GDXKMA1 Infineon Technologies Infineon-IFCM20T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd2acdfc2c7d Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 650 V
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IFCM30T65GDXKMA1 IFCM30T65GDXKMA1 Infineon Technologies Infineon-IFCM30T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd33e33d2c89 Description: IPM IGBT 650V 30A 24PWRDIP MOD
Voltage: 650 V
Current: 30 A
Voltage - Isolation: 2000Vrms
Configuration: 2 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Tube
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BSP752RNUMA1 BSP752RNUMA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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MB44C022PW-G-ERE1 Infineon Technologies Description: IC ANALOG
Part Status: Obsolete
Packaging: Bulk
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MB89537HPFM-G-320-BNDE1 Infineon Technologies Description: IC MCU 8BIT 32KB MROM 64QFP
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Connectivity: I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Bulk
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MB89585BPMC1-G-706-JNE1 Infineon Technologies Description: IC MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
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В кошику  од. на суму  грн.
MB89F538L-101PF-GE1 Infineon Technologies Description: IC MCU 8BIT 48KB FLASH 64QFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Connectivity: I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Bulk
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MB90F562BPFM-G-9002E1 Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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BTF60702EKVXUMA1 BTF60702EKVXUMA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5 ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 120mOhm
Output Configuration: High Side
Packaging: Tape & Reel (TR)
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MB15E07PFV1-G-BNDE1 Infineon Technologies Description: IC SYNTHESIZER 16SSOP
Packaging: Tube
DigiKey Programmable: Not Verified
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MB89135LPMC-G-500-BNDE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 48QFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 48-QFP (10x10)
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 4x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 48-QFP
Packaging: Tray
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MB89183PFM-G-247-BNDE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 64QFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: LCD, POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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MB89193APF-G-196-BND-RE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 28SOP
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
товару немає в наявності
В кошику  од. на суму  грн.
MB89193APF-G-269-BND-RE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 28SOP
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
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MB89535APF-G-1033E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 16KB MROM 64QFP
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
товару немає в наявності
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MB89535APMC-G-1022-JNE1 MB89535APMC-G-1022-JNE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 16KB MROM 64LQFP
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-LQFP (12x12)
Peripherals: POR, PWM, WDT
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
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MB89537APF-G-1098E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 32KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 38
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В кошику  од. на суму  грн.
MB89567APF-G-196-BNDE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 32KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
товару немає в наявності
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IPT60R102G7XTMA1 Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a
IPT60R102G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e
IPT60R125G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28
IPT60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
товару немає в наявності
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IPD60R600P7ATMA1 infineon-ipd60r600p7-datasheet-en.pdf
IPD60R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+26.21 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9
IPD60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+44.16 грн
5000+39.62 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
IPL60R365P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 infineon-ipl60r185p7-ds-en.pdf
IPL60R185P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPA60R360P7XKSA1 Infineon-IPA60R360P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6dde41500b
IPA60R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+148.78 грн
50+69.17 грн
100+61.96 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
IPP60R180P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 9520 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+205.35 грн
50+97.96 грн
100+88.28 грн
500+66.92 грн
1000+61.81 грн
2000+57.50 грн
5000+51.99 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPW60R180P7XKSA1 infineon-ipw60r180p7-ds-en.pdf
IPW60R180P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 579 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+223.17 грн
30+117.10 грн
120+95.47 грн
510+74.70 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPZ60R037P7XKSA1
IPZ60R037P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
товару немає в наявності
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IPAW60R360P7SXKSA1 infineon-ipaw60r360p7s-datasheet-en.pdf
IPAW60R360P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a
IPT60R102G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
на замовлення 1005 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+371.96 грн
10+238.34 грн
100+170.36 грн
500+143.37 грн
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e
IPT60R125G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28
IPT60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1299 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+266.57 грн
10+168.79 грн
100+118.76 грн
500+91.40 грн
1000+84.95 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 infineon-ipd60r600p7-datasheet-en.pdf
IPD60R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+100.74 грн
10+61.19 грн
100+40.69 грн
500+29.94 грн
1000+27.29 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9
IPD60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 6751 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+157.31 грн
10+96.63 грн
100+65.11 грн
500+48.41 грн
1000+44.33 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
IPL60R365P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+158.86 грн
10+104.25 грн
100+74.60 грн
500+57.69 грн
1000+53.78 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 infineon-ipl60r185p7-ds-en.pdf
IPL60R185P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 2779 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+199.93 грн
10+124.92 грн
100+86.29 грн
500+67.47 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FM25L04B-GA4
FM25L04B-GA4
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 8SOIC
DigiKey Programmable: Not Verified
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FRAM
товару немає в наявності
В кошику  од. на суму  грн.
FM25L04B-GA4TR
FM25L04B-GA4TR
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
MB91248SZPFV-GS-525K5E1
MB91248SZPFV-GS-525K5E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB MROM 144LQFP
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LCD, PWM, WDT
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x8/10b
Core Processor: FR60Lite RISC
товару немає в наявності
В кошику  од. на суму  грн.
MB91F362GBPFVS-GK5E2
MB91F362GBPFVS-GK5E2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 208QFP
Program Memory Size: 512KB (512K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 160
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x10b; D/A 2x10b
Core Processor: FR50 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 20K x 8
товару немає в наявності
В кошику  од. на суму  грн.
SIPC30N60CFDX1SA1
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V
товару немає в наявності
В кошику  од. на суму  грн.
SIPC26N60CFDX1SA1
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V
Packaging: Box
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
IRL40SC209
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+116.31 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+147.17 грн
1600+133.07 грн
2400+131.47 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
IRL40SC209
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 806 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+316.94 грн
10+201.63 грн
100+142.75 грн
В кошику  од. на суму  грн.
IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 4212 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+389.78 грн
10+249.83 грн
100+178.80 грн
В кошику  од. на суму  грн.
IRS2008STRPBF infineon-irs2008s-m-datasheet-en.pdf
IRS2008STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+34.75 грн
5000+32.63 грн
7500+32.22 грн
12500+29.80 грн
17500+29.55 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IRS2008STRPBF infineon-irs2008s-m-datasheet-en.pdf
IRS2008STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 22063 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+73.62 грн
10+50.97 грн
25+45.91 грн
100+37.90 грн
250+35.42 грн
500+33.93 грн
1000+32.17 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
CH376-80032
Виробник: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CH376-80033
Виробник: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI000M
S25FL032P0XMFI000M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI010M
S25FL032P0XMFI010M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI013M
S25FL032P0XMFI013M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFV001M
S25FL032P0XMFV001M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
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S25FL116K0XWEN009
S25FL116K0XWEN009
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 16SOIC
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S25FL132K0XBHVS20
S25FL132K0XBHVS20
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+55.02 грн
10+48.28 грн
25+47.67 грн
40+44.47 грн
80+39.75 грн
338+39.42 грн
676+38.20 грн
1014+36.83 грн
Мінімальне замовлення: 6 шт
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S25FL132K0XMFN013 S25FL116K,S25FL132K,S25FL164K.pdf
S25FL132K0XMFN013
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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S25FL132K0XNFV041 S25FL116K_132K_164K_RevF_2-28-17.pdf
S25FL132K0XNFV041
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8USON
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-USON (4x4)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Tube
на замовлення 8985 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+76.72 грн
10+67.01 грн
25+66.20 грн
50+61.74 грн
100+55.21 грн
250+54.74 грн
500+53.05 грн
1000+51.15 грн
5000+46.59 грн
Мінімальне замовлення: 5 шт
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SAL-XC866L-4FRA 5V BE Infineon-SAL_XC866-DS-v01_01-cn.pdf?fileId=db3a30433004641301306564e09f0366
SAL-XC866L-4FRA 5V BE
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
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IFCM20T65GDXKMA1 Infineon-IFCM20T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd2acdfc2c7d
IFCM20T65GDXKMA1
Виробник: Infineon Technologies
Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 650 V
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IFCM30T65GDXKMA1 Infineon-IFCM30T65GD-DS-v01_00-EN.pdf?fileId=5546d46254bdc4f50154dd33e33d2c89
IFCM30T65GDXKMA1
Виробник: Infineon Technologies
Description: IPM IGBT 650V 30A 24PWRDIP MOD
Voltage: 650 V
Current: 30 A
Voltage - Isolation: 2000Vrms
Configuration: 2 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Tube
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BSP752RNUMA1
BSP752RNUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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MB44C022PW-G-ERE1
Виробник: Infineon Technologies
Description: IC ANALOG
Part Status: Obsolete
Packaging: Bulk
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MB89537HPFM-G-320-BNDE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 64QFP
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Connectivity: I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Bulk
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MB89585BPMC1-G-706-JNE1
Виробник: Infineon Technologies
Description: IC MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
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MB89F538L-101PF-GE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 48KB FLASH 64QFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Connectivity: I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Bulk
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MB90F562BPFM-G-9002E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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BTF60702EKVXUMA1
BTF60702EKVXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5 ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 120mOhm
Output Configuration: High Side
Packaging: Tape & Reel (TR)
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MB15E07PFV1-G-BNDE1
Виробник: Infineon Technologies
Description: IC SYNTHESIZER 16SSOP
Packaging: Tube
DigiKey Programmable: Not Verified
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MB89135LPMC-G-500-BNDE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 48QFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 48-QFP (10x10)
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 4x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 48-QFP
Packaging: Tray
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MB89183PFM-G-247-BNDE1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 64QFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: LCD, POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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MB89193APF-G-196-BND-RE1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
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MB89193APF-G-269-BND-RE1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
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MB89535APF-G-1033E1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
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MB89535APMC-G-1022-JNE1 ProductGuide_2008.1.pdf
MB89535APMC-G-1022-JNE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64LQFP
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-LQFP (12x12)
Peripherals: POR, PWM, WDT
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
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MB89537APF-G-1098E1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 38
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MB89567APF-G-196-BNDE1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
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