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TLE9877QXW40XUMA1 TLE9877QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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TLE9879QXA20XUMA2 TLE9879QXA20XUMA2 Infineon Technologies Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9879QXA40XUMA2 Infineon Technologies Infineon-TLE9879QXA40-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d840096a3c2f Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-VQFN (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+224.06 грн
Мінімальне замовлення: 2500
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TLE9879QXW40XUMA1 TLE9879QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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TLF35584QVVS2XUMA1 TLF35584QVVS2XUMA1 Infineon Technologies Infineon-TLF35584_ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46266f85d63016711a0d29f2713 Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Obsolete
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TLS805B1LDV33XUMA1 TLS805B1LDV33XUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC REG LIN 3.3V 50MA PG-TSON-102
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810A1LDV33XUMA1 TLS810A1LDV33XUMA1 Infineon Technologies Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679 Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810B1EJV33XUMA1 TLS810B1EJV33XUMA1 Infineon Technologies Infineon-TLS810B1xxV33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015921015a8b366e Description: IC REG LIN 3.3V 100MA 8DSO E-PAD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810B1EJV50XUMA1 TLS810B1EJV50XUMA1 Infineon Technologies Infineon-TLS810B1xxV50-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101592101695f3674 Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.55V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 11 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810D1EJV33XUMA1 TLS810D1EJV33XUMA1 Infineon Technologies Infineon-TLS810D1xxV33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101592101892b367d Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+59.74 грн
Мінімальне замовлення: 2500
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TLS810D1LDV33XUMA1 TLS810D1LDV33XUMA1 Infineon Technologies Infineon-TLS810D1xxV33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101592101892b367d Description: IC REG LIN 3.3V 100MA TSON-10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
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TLS850D0TEV33ATMA1 TLS850D0TEV33ATMA1 Infineon Technologies Infineon-TLS850D0TE-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edc108426b Description: IC REG LINEAR 3.3V 500MA TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 52 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.43V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS850D0TEV50ATMA1 TLS850D0TEV50ATMA1 Infineon Technologies Infineon-TLS850D0TE-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edc108426b Description: IC REG LIN 5V 500MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 52 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.425V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
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XDPL8105XUMA1 XDPL8105XUMA1 Infineon Technologies Infineon-XDPL8105-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158962cc1314318 Description: IC LED DRIVER OFFL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 180kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
2500+57.08 грн
5000+52.93 грн
12500+50.89 грн
Мінімальне замовлення: 2500
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BFP196WNH6327XTSA1 BFP196WNH6327XTSA1 Infineon Technologies Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643 Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.7dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB @ 900MHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+10.27 грн
Мінімальне замовлення: 3000
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BGA7L1BN6E6327XTSA1 BGA7L1BN6E6327XTSA1 Infineon Technologies Infineon-BGA7L1BN6-DS-v03_01-EN.pdf?fileId=5546d46254e133b401552f50717969dc Description: IC AMP LTE 716MHZ-960MHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 716MHz ~ 960MHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 13.6dB
Current - Supply: 4.9mA
Noise Figure: 1.8dB
Test Frequency: 960MHz
Supplier Device Package: PG-TSNP-6-2
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BGA8U1BN6E6327XTSA1 BGA8U1BN6E6327XTSA1 Infineon Technologies Infineon-BGA8U1BN6-DS-v03_01-EN.pdf?fileId=5546d462617643590161b39607a63591 Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.85GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4mA
Noise Figure: 1.6dB ~ 5dB
P1dB: -5dBm
Test Frequency: 5.15GHz ~ 5.85GHz
Supplier Device Package: PG-TSNP-6-2
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BGA8V1BN6E6327XTSA1 BGA8V1BN6E6327XTSA1 Infineon Technologies Infineon-BGA8V1BN6-DS-v03_03-EN.pdf?fileId=5546d462617643590161b39f384935a5 Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
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BGAU1A10E6327XTSA1 BGAU1A10E6327XTSA1 Infineon Technologies Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.925GHz
RF Type: LTE
Voltage - Supply: 1.7V ~ 1.9V
Current - Supply: 5mA
Noise Figure: 1.7dB ~ 6.5dB
P1dB: -1dBm
Test Frequency: 5GHz
Part Status: Last Time Buy
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BGAV1A10E6327XTSA1 BGAV1A10E6327XTSA1 Infineon Technologies Infineon-BGAV1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926ac2014ba7 Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
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BGC100GN6E6327XTSA1 BGC100GN6E6327XTSA1 Infineon Technologies Infineon-BGC100GN6-DS-v02_01-EN.pdf?fileId=5546d4626102d35a016131b20db05867 Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Supplier Device Package: PG-TSNP-6-2
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
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BGS12S3N6E6327XTSA1 Infineon Technologies Infineon-BGS12S3N6-DS-v01_00-EN.pdf?fileId=5546d462557e6e89015591d71e7c649b Description: IC RF SWITCH SPDT TSNP6-6
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BGSA20GN10E6327XTSA1 BGSA20GN10E6327XTSA1 Infineon Technologies Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c Description: IC RF ANT DEVICE 10TSNP
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CDM10VD2XTSA1 CDM10VD2XTSA1 Infineon Technologies Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
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CDM10VD3XTSA1 CDM10VD3XTSA1 Infineon Technologies Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+17.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CDM10VD4XTSA1 CDM10VD4XTSA1 Infineon Technologies Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
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CDM10VDXTSA1 CDM10VDXTSA1 Infineon Technologies Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+17.11 грн
6000+16.04 грн
Мінімальне замовлення: 3000
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IPC70N04S54R6ATMA1 IPC70N04S54R6ATMA1 Infineon Technologies Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
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IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 Infineon Technologies Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910 Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+26.38 грн
10000+24.34 грн
Мінімальне замовлення: 5000
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IPC90N04S53R6ATMA1 IPC90N04S53R6ATMA1 Infineon Technologies Infineon-IPC90N04S5-3R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801d898290a Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+25.63 грн
Мінімальне замовлення: 5000
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IPC90N04S5L3R3ATMA1 IPC90N04S5L3R3ATMA1 Infineon Technologies Infineon-IPC90N04S5L-3R3-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10159080203de2913 Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+25.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLV493DB1B6HTSA1 Infineon Technologies Infineon-TLV493D-A1B6-DataSheet-v01_10-EN.pdf?fileId=5546d462525dbac40152a6b85c760e80 Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
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FS900R08A2P2B31BOSA1 FS900R08A2P2B31BOSA1 Infineon Technologies Infineon-FS900R08A2P2_B31-DS-v03_02-EN.pdf?fileId=5546d46262b31d2e016301938f3a33b5 Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
товару немає в наявності
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AIGW50N65F5XKSA1 AIGW50N65F5XKSA1 Infineon Technologies Infineon-AIGW50N65F5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0800b8887f28 Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
1+480.03 грн
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AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 Infineon Technologies Infineon-AIKQ120N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b6d77c9b Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+1254.40 грн
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AIKW20N60CTXKSA1 AIKW20N60CTXKSA1 Infineon Technologies Infineon-AIKW20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b9f47c9d Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
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ICE5QR0680AZXKLA1 ICE5QR0680AZXKLA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 74 W
товару немає в наявності
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ICE5QR4770AZXKLA1 ICE5QR4770AZXKLA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
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IKA10N65ET6XKSA1 Infineon Technologies Description: IGBT 650V 10A TO220-3
Packaging: Tube
Part Status: Active
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IKA15N65ET6XKSA1 Infineon Technologies Infineon-IKA15N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d635e5280 Description: IGBT TRENCH 650V 34A TO220-3-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 35.3 W
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IKA20N65ET6XKSA1 Infineon Technologies Description: IGBT 650V 20A TO220-3
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 Infineon Technologies Infineon-IKQ40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817be8a0538 Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
1+605.81 грн
30+340.11 грн
120+286.65 грн
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 Infineon Technologies Infineon-IKQ40N120CT2-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015c0be021fb0a7d Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
товару немає в наявності
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IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 Infineon Technologies Infineon-IKQ50N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817b0150536 Description: IGBT 1200V 100A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 34ns/297ns
Switching Energy: 3mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
1+738.44 грн
30+420.45 грн
120+356.73 грн
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IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 Infineon Technologies Infineon-IKQ75N120CH3-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd817a3920534 Description: IGBT 1200V 150A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 34ns/282ns
Switching Energy: 6.4mJ (on), 2.8mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
1+939.52 грн
30+547.34 грн
120+469.05 грн
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IKQ75N120CT2XKSA1 IKQ75N120CT2XKSA1 Infineon Technologies Infineon-IKQ75N120CT2-DS-v02_03-EN.pdf?fileId=5546d4625bd71aa0015bd81797280532 Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/328ns
Switching Energy: 6.7mJ (on), 4.1mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+1023.37 грн
30+599.66 грн
120+515.11 грн
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IPAN80R280P7XKSA1 IPAN80R280P7XKSA1 Infineon Technologies infineon-ipan80r280p7-ds-en.pdf Description: MOSFET N-CH 800V 17A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
товару немає в наявності
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IPAN80R450P7XKSA1 IPAN80R450P7XKSA1 Infineon Technologies Infineon-IPAN80R450P7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc10159892576773237 Description: MOSFET N-CH 800V 11A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
3+170.28 грн
50+131.87 грн
100+108.48 грн
Мінімальне замовлення: 3
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IPAW70R600CEXKSA1 IPAW70R600CEXKSA1 Infineon Technologies Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
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IPP039N10N5AKSA1 IPP039N10N5AKSA1 Infineon Technologies Infineon-IPP039N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b626e5b4367fa Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
2+326.86 грн
50+153.44 грн
100+146.10 грн
Мінімальне замовлення: 2
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IPS65R650CEAKMA1 IPS65R650CEAKMA1 Infineon Technologies Infineon-IPS65R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539da993114571 Description: MOSFET N-CH 700V 10.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPSA70R1K4CEAKMA1 IPSA70R1K4CEAKMA1 Infineon Technologies Infineon-IPSA70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805cd70d15551 Description: MOSFET N-CH 700V 5.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
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IPSA70R2K0CEAKMA1 IPSA70R2K0CEAKMA1 Infineon Technologies Infineon-IPSA70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c980e854ef Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
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IPSA70R600CEAKMA1 IPSA70R600CEAKMA1 Infineon Technologies Infineon-IPSA70R600CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c99b2654f5 Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
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IPSA70R950CEAKMA1 IPSA70R950CEAKMA1 Infineon Technologies Infineon-IPSA70R950CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c98e8554f2 Description: MOSFET N-CH 700V 8.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-347
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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IRF300P227 IRF300P227 Infineon Technologies Infineon-IRF300P227-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb678da7c74 Description: MOSFET N-CH 300V 50A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4893 pF @ 50 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
1+569.02 грн
25+326.75 грн
100+273.98 грн
500+228.45 грн
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IRS2008SPBF IRS2008SPBF Infineon Technologies Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2890DSPBF IRS2890DSPBF Infineon Technologies Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
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IRSM506-076DA IRSM506-076DA Infineon Technologies IRSM506-076.pdf Description: IC HALF BRIDGE DRIVER 4A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 15A
Technology: IGBT
Voltage - Load: 480V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM506-076DA2 Infineon Technologies IRSM506-076.pdf Description: IC MICRO MCM DRIVER 23DIP
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TLE9877QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9877QXW40XUMA1
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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TLE9879QXA20XUMA2 Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de
TLE9879QXA20XUMA2
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9879QXA40XUMA2 Infineon-TLE9879QXA40-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d840096a3c2f
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-VQFN (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+224.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9879QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9879QXW40XUMA1
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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TLF35584QVVS2XUMA1 Infineon-TLF35584_ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46266f85d63016711a0d29f2713
TLF35584QVVS2XUMA1
Виробник: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Obsolete
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TLS805B1LDV33XUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
TLS805B1LDV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 50MA PG-TSON-102
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810A1LDV33XUMA1 Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679
TLS810A1LDV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810B1EJV33XUMA1 Infineon-TLS810B1xxV33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015921015a8b366e
TLS810B1EJV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 100MA 8DSO E-PAD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810B1EJV50XUMA1 Infineon-TLS810B1xxV50-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101592101695f3674
TLS810B1EJV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.55V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 11 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS810D1EJV33XUMA1 Infineon-TLS810D1xxV33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101592101892b367d
TLS810D1EJV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+59.74 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLS810D1LDV33XUMA1 Infineon-TLS810D1xxV33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101592101892b367d
TLS810D1LDV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 100MA TSON-10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
товару немає в наявності
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TLS850D0TEV33ATMA1 Infineon-TLS850D0TE-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edc108426b
TLS850D0TEV33ATMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 500MA TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 52 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.43V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
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TLS850D0TEV50ATMA1 Infineon-TLS850D0TE-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edc108426b
TLS850D0TEV50ATMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 52 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.425V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
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XDPL8105XUMA1 Infineon-XDPL8105-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158962cc1314318
XDPL8105XUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 180kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+57.08 грн
5000+52.93 грн
12500+50.89 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BFP196WNH6327XTSA1 Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643
BFP196WNH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.7dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB @ 900MHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.27 грн
Мінімальне замовлення: 3000
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BGA7L1BN6E6327XTSA1 Infineon-BGA7L1BN6-DS-v03_01-EN.pdf?fileId=5546d46254e133b401552f50717969dc
BGA7L1BN6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP LTE 716MHZ-960MHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 716MHz ~ 960MHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 13.6dB
Current - Supply: 4.9mA
Noise Figure: 1.8dB
Test Frequency: 960MHz
Supplier Device Package: PG-TSNP-6-2
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BGA8U1BN6E6327XTSA1 Infineon-BGA8U1BN6-DS-v03_01-EN.pdf?fileId=5546d462617643590161b39607a63591
BGA8U1BN6E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP 5.15GHZ-5.85GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.85GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4mA
Noise Figure: 1.6dB ~ 5dB
P1dB: -5dBm
Test Frequency: 5.15GHz ~ 5.85GHz
Supplier Device Package: PG-TSNP-6-2
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BGA8V1BN6E6327XTSA1 Infineon-BGA8V1BN6-DS-v03_03-EN.pdf?fileId=5546d462617643590161b39f384935a5
BGA8V1BN6E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP 3.4GHZ-3.8GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
Voltage - Supply: 1.6V ~ 3.1V
Current - Supply: 4.2mA
Noise Figure: 1.2dB ~ 5.3dB
P1dB: -3dBm
Test Frequency: 3.4GHz ~ 3.8GHz
Supplier Device Package: PG-TSNP-6-2
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BGAU1A10E6327XTSA1 Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa
BGAU1A10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.925GHz
RF Type: LTE
Voltage - Supply: 1.7V ~ 1.9V
Current - Supply: 5mA
Noise Figure: 1.7dB ~ 6.5dB
P1dB: -1dBm
Test Frequency: 5GHz
Part Status: Last Time Buy
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BGAV1A10E6327XTSA1 Infineon-BGAV1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926ac2014ba7
BGAV1A10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
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BGC100GN6E6327XTSA1 Infineon-BGC100GN6-DS-v02_01-EN.pdf?fileId=5546d4626102d35a016131b20db05867
BGC100GN6E6327XTSA1
Виробник: Infineon Technologies
Description: RF DIR COUPLER 600MHZ~2.7GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: Cellular, CDMA, GSM, HSPA+, LTE, TD-SCDMA, W-CDMA
Supplier Device Package: PG-TSNP-6-2
Insertion Loss: 0.3dB
Applications: Cellular, GSM
Coupler Type: Coupler, With Filter
Return Loss: 21dB
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BGS12S3N6E6327XTSA1 Infineon-BGS12S3N6-DS-v01_00-EN.pdf?fileId=5546d462557e6e89015591d71e7c649b
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT TSNP6-6
товару немає в наявності
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BGSA20GN10E6327XTSA1 Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c
BGSA20GN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
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CDM10VD2XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
CDM10VD2XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
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CDM10VD3XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
CDM10VD3XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CDM10VD4XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
CDM10VD4XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: PG-SOT23-6
Part Status: Active
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CDM10VDXTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
CDM10VDXTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.11 грн
6000+16.04 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPC70N04S54R6ATMA1 Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d
IPC70N04S54R6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
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IPC70N04S5L4R2ATMA1 Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910
IPC70N04S5L4R2ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+26.38 грн
10000+24.34 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPC90N04S53R6ATMA1 Infineon-IPC90N04S5-3R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801d898290a
IPC90N04S53R6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 45A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+25.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPC90N04S5L3R3ATMA1 Infineon-IPC90N04S5L-3R3-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10159080203de2913
IPC90N04S5L3R3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+25.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLV493DB1B6HTSA1 Infineon-TLV493D-A1B6-DataSheet-v01_10-EN.pdf?fileId=5546d462525dbac40152a6b85c760e80
Виробник: Infineon Technologies
Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
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FS900R08A2P2B31BOSA1 Infineon-FS900R08A2P2_B31-DS-v03_02-EN.pdf?fileId=5546d46262b31d2e016301938f3a33b5
FS900R08A2P2B31BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
товару немає в наявності
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AIGW50N65F5XKSA1 Infineon-AIGW50N65F5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0800b8887f28
AIGW50N65F5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+480.03 грн
В кошику  од. на суму  грн.
AIKQ120N60CTXKSA1 Infineon-AIKQ120N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b6d77c9b
AIKQ120N60CTXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1254.40 грн
В кошику  од. на суму  грн.
AIKW20N60CTXKSA1 Infineon-AIKW20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b9f47c9d
AIKW20N60CTXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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ICE5QR0680AZXKLA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 74 W
товару немає в наявності
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ICE5QR4770AZXKLA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR4770AZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
товару немає в наявності
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IKA10N65ET6XKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 10A TO220-3
Packaging: Tube
Part Status: Active
товару немає в наявності
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IKA15N65ET6XKSA1 Infineon-IKA15N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d635e5280
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 34A TO220-3-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 35.3 W
товару немає в наявності
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IKA20N65ET6XKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 20A TO220-3
товару немає в наявності
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IKQ40N120CH3XKSA1 Infineon-IKQ40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817be8a0538
IKQ40N120CH3XKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 80A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+605.81 грн
30+340.11 грн
120+286.65 грн
В кошику  од. на суму  грн.
IKQ40N120CT2XKSA1 Infineon-IKQ40N120CT2-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015c0be021fb0a7d
IKQ40N120CT2XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
товару немає в наявності
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IKQ50N120CH3XKSA1 Infineon-IKQ50N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817b0150536
IKQ50N120CH3XKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 100A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 34ns/297ns
Switching Energy: 3mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+738.44 грн
30+420.45 грн
120+356.73 грн
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IKQ75N120CH3XKSA1 Infineon-IKQ75N120CH3-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd817a3920534
IKQ75N120CH3XKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 150A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 34ns/282ns
Switching Energy: 6.4mJ (on), 2.8mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+939.52 грн
30+547.34 грн
120+469.05 грн
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IKQ75N120CT2XKSA1 Infineon-IKQ75N120CT2-DS-v02_03-EN.pdf?fileId=5546d4625bd71aa0015bd81797280532
IKQ75N120CT2XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/328ns
Switching Energy: 6.7mJ (on), 4.1mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1023.37 грн
30+599.66 грн
120+515.11 грн
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IPAN80R280P7XKSA1 infineon-ipan80r280p7-ds-en.pdf
IPAN80R280P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
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IPAN80R450P7XKSA1 Infineon-IPAN80R450P7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc10159892576773237
IPAN80R450P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+170.28 грн
50+131.87 грн
100+108.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPAW70R600CEXKSA1 Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd
IPAW70R600CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
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IPP039N10N5AKSA1 Infineon-IPP039N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b626e5b4367fa
IPP039N10N5AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+326.86 грн
50+153.44 грн
100+146.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS65R650CEAKMA1 Infineon-IPS65R650CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539da993114571
IPS65R650CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPSA70R1K4CEAKMA1 Infineon-IPSA70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805cd70d15551
IPSA70R1K4CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
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IPSA70R2K0CEAKMA1 Infineon-IPSA70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c980e854ef
IPSA70R2K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
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IPSA70R600CEAKMA1 Infineon-IPSA70R600CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c99b2654f5
IPSA70R600CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
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IPSA70R950CEAKMA1 Infineon-IPSA70R950CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c98e8554f2
IPSA70R950CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-347
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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IRF300P227 Infineon-IRF300P227-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb678da7c74
IRF300P227
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 50A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4893 pF @ 50 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+569.02 грн
25+326.75 грн
100+273.98 грн
500+228.45 грн
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IRS2008SPBF Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112
IRS2008SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2890DSPBF Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4
IRS2890DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
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IRSM506-076DA IRSM506-076.pdf
IRSM506-076DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 15A
Technology: IGBT
Voltage - Load: 480V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM506-076DA2 IRSM506-076.pdf
Виробник: Infineon Technologies
Description: IC MICRO MCM DRIVER 23DIP
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