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IPD60R1K5CEAUMA1 IPD60R1K5CEAUMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 13165 шт:
термін постачання 21-31 дні (днів)
7+50.93 грн
10+37.78 грн
100+24.69 грн
500+17.72 грн
1000+15.99 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPD50R280CEAUMA1 IPD50R280CEAUMA1 Infineon Technologies Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 4155 шт:
термін постачання 21-31 дні (днів)
3+136.88 грн
10+88.66 грн
100+66.11 грн
500+49.44 грн
1000+45.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50R500CEAUMA1 IPD50R500CEAUMA1 Infineon Technologies dgdl?fileId=db3a3043382e83730138514ff7881004 Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 16506 шт:
термін постачання 21-31 дні (днів)
8+40.59 грн
10+38.85 грн
100+30.52 грн
500+26.60 грн
1000+24.26 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRL60HS118 IRL60HS118 Infineon Technologies Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193 Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
4000+23.74 грн
8000+21.96 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL80HS120 IRL80HS120 Infineon Technologies Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191 Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+25.95 грн
8000+24.45 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL60HS118 IRL60HS118 Infineon Technologies Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193 Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 30802 шт:
термін постачання 21-31 дні (днів)
4+90.72 грн
10+47.82 грн
100+38.66 грн
500+28.32 грн
1000+25.76 грн
2000+23.60 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDK02G65C5XTMA2 IDK02G65C5XTMA2 Infineon Technologies Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd Description: DIODE SIL CARB 650V 2A TO263-2
товару немає в наявності
В кошику  од. на суму  грн.
IDK03G65C5XTMA2 IDK03G65C5XTMA2 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IDH02G65C5XKSA2 IDH02G65C5XKSA2 Infineon Technologies Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb Description: DIODE SIL CARB 650V 2A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
на замовлення 461 шт:
термін постачання 21-31 дні (днів)
3+109.03 грн
50+55.22 грн
100+49.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDH04G65C5XKSA2 IDH04G65C5XKSA2 Infineon Technologies IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947 Description: DIODE SIL CARB 650V 4A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
на замовлення 1636 шт:
термін постачання 21-31 дні (днів)
3+140.86 грн
50+109.14 грн
100+89.80 грн
500+71.31 грн
1000+60.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDW10G65C5XKSA1 IDW10G65C5XKSA1 Infineon Technologies IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc Description: DIODE SIL CARB 650V 10A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
1+367.66 грн
30+197.77 грн
120+163.18 грн
В кошику  од. на суму  грн.
IDW12G65C5XKSA1 IDW12G65C5XKSA1 Infineon Technologies IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f Description: DIODE SIL CARB 650V 12A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
1+417.00 грн
30+224.74 грн
120+187.85 грн
В кошику  од. на суму  грн.
IDW24G65C5BXKSA2 IDW24G65C5BXKSA2 Infineon Technologies Infineon-IDW24G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44b312b44906 Description: DIODE SIL CARB 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+841.97 грн
10+695.14 грн
240+545.22 грн
В кошику  од. на суму  грн.
IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 Infineon Technologies Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1 Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
на замовлення 344 шт:
термін постачання 21-31 дні (днів)
1+1238.28 грн
30+965.48 грн
120+908.68 грн
В кошику  од. на суму  грн.
TLE7250GVIOXUMA2 TLE7250GVIOXUMA2 Infineon Technologies Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56 Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
на замовлення 8289 шт:
термін постачання 21-31 дні (днів)
2+165.53 грн
10+118.25 грн
25+107.90 грн
100+90.57 грн
250+85.48 грн
500+82.41 грн
1000+78.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDT04S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IDT08S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IDT16S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QSAGXUMA1 ICE5QSAGXUMA1 Infineon Technologies Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119 Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QSAGXUMA1 ICE5QSAGXUMA1 Infineon Technologies Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119 Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
на замовлення 2228 шт:
термін постачання 21-31 дні (днів)
3+109.82 грн
10+77.02 грн
25+69.86 грн
100+58.18 грн
250+54.66 грн
500+52.53 грн
1000+49.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPT60R028G7XTMA1 IPT60R028G7XTMA1 Infineon Technologies Infineon-IPT60R028G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e82df70e30 Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+524.55 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R080G7XTMA1 IPT60R080G7XTMA1 Infineon Technologies Infineon-IPT60R080G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e8059d0e2c Description: MOSFET N-CH 600V 29A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+220.99 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R050G7XTMA1 IPT60R050G7XTMA1 Infineon Technologies Infineon-IPT60R050G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5974e0e26 Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+284.37 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 IPT60R102G7XTMA1 Infineon Technologies Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 IPT60R125G7XTMA1 Infineon Technologies Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 IPT60R150G7XTMA1 Infineon Technologies Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28 Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 IPD60R600P7ATMA1 Infineon Technologies Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4 Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 IPD60R360P7ATMA1 Infineon Technologies Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+36.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 IPL60R365P7AUMA1 Infineon Technologies Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 IPL60R185P7AUMA1 Infineon Technologies Infineon-IPL60R185P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc50683cb7 Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+74.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPA60R360P7XKSA1 IPA60R360P7XKSA1 Infineon Technologies Infineon-IPA60R360P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6dde41500b Description: MOSFET N-CHANNEL 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R180P7XKSA1 IPP60R180P7XKSA1 Infineon Technologies Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
2+194.97 грн
50+80.39 грн
100+77.87 грн
500+64.87 грн
1000+59.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R180P7XKSA1 IPW60R180P7XKSA1 Infineon Technologies Infineon-IPW60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5c38a2153f7a Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPZ60R037P7XKSA1 IPZ60R037P7XKSA1 Infineon Technologies Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R360P7SXKSA1 IPAW60R360P7SXKSA1 Infineon Technologies Infineon-IPAW60R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6e87ab5017 Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
3+128.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 IPT60R102G7XTMA1 Infineon Technologies Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
1+389.15 грн
10+270.67 грн
100+194.50 грн
500+152.03 грн
1000+150.25 грн
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 IPT60R125G7XTMA1 Infineon Technologies Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 IPT60R150G7XTMA1 Infineon Technologies Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28 Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1304 шт:
термін постачання 21-31 дні (днів)
2+314.34 грн
10+199.17 грн
100+140.56 грн
500+108.43 грн
1000+101.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 IPD60R600P7ATMA1 Infineon Technologies Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4 Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 2196 шт:
термін постачання 21-31 дні (днів)
3+120.17 грн
10+73.41 грн
100+49.11 грн
500+36.28 грн
1000+33.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 IPD60R360P7ATMA1 Infineon Technologies Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 5787 шт:
термін постачання 21-31 дні (днів)
5+70.83 грн
10+51.96 грн
100+42.47 грн
500+38.36 грн
1000+36.89 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 IPL60R365P7AUMA1 Infineon Technologies Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
2+163.14 грн
10+107.06 грн
100+76.61 грн
500+59.24 грн
1000+55.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 IPL60R185P7AUMA1 Infineon Technologies Infineon-IPL60R185P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc50683cb7 Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 4719 шт:
термін постачання 21-31 дні (днів)
2+219.64 грн
10+144.91 грн
100+100.42 грн
500+76.39 грн
1000+70.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FM25L04B-GA4 FM25L04B-GA4 Infineon Technologies Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM25L04B-GA4TR FM25L04B-GA4TR Infineon Technologies Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB91248SZPFV-GS-525K5E1 MB91248SZPFV-GS-525K5E1 Infineon Technologies Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB91F362GBPFVS-GK5E2 MB91F362GBPFVS-GK5E2 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR50 RISC
Data Converters: A/D 8x10b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Number of I/O: 160
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SIPC30N60CFDX1SA1 Infineon Technologies Description: MOSFET COOL MOS 600V
товару немає в наявності
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SIPC26N60CFDX1SA1 Infineon Technologies Description: MOSFET COOL MOS 600V
Packaging: Box
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRL40SC209 IRL40SC209 Infineon Technologies Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+117.52 грн
1600+112.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRL40SC228 IRL40SC228 Infineon Technologies Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664 Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+118.54 грн
1600+113.38 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRL40SC209 IRL40SC209 Infineon Technologies Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 1690 шт:
термін постачання 21-31 дні (днів)
1+319.92 грн
10+203.69 грн
100+144.24 грн
В кошику  од. на суму  грн.
IRL40SC228 IRL40SC228 Infineon Technologies Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664 Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 1674 шт:
термін постачання 21-31 дні (днів)
1+323.10 грн
10+205.38 грн
100+145.43 грн
В кошику  од. на суму  грн.
IRS2008STRPBF IRS2008STRPBF Infineon Technologies Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRS2008STRPBF IRS2008STRPBF Infineon Technologies Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1565 шт:
термін постачання 21-31 дні (днів)
6+58.89 грн
10+40.69 грн
25+36.63 грн
100+30.18 грн
250+28.18 грн
500+26.98 грн
1000+25.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CH376-80032 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CH376-80033 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI000M S25FL032P0XMFI000M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI010M S25FL032P0XMFI010M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI013M S25FL032P0XMFI013M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFV001M S25FL032P0XMFV001M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R1K5CEAUMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 13165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.93 грн
10+37.78 грн
100+24.69 грн
500+17.72 грн
1000+15.99 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPD50R280CEAUMA1 Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae
IPD50R280CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 4155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.88 грн
10+88.66 грн
100+66.11 грн
500+49.44 грн
1000+45.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50R500CEAUMA1 dgdl?fileId=db3a3043382e83730138514ff7881004
IPD50R500CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 16506 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.59 грн
10+38.85 грн
100+30.52 грн
500+26.60 грн
1000+24.26 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRL60HS118 Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193
IRL60HS118
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+23.74 грн
8000+21.96 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL80HS120 Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191
IRL80HS120
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+25.95 грн
8000+24.45 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL60HS118 Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193
IRL60HS118
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 30802 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.72 грн
10+47.82 грн
100+38.66 грн
500+28.32 грн
1000+25.76 грн
2000+23.60 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDK02G65C5XTMA2 Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd
IDK02G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 2A TO263-2
товару немає в наявності
В кошику  од. на суму  грн.
IDK03G65C5XTMA2 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IDH02G65C5XKSA2 Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb
IDH02G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 2A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
на замовлення 461 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+109.03 грн
50+55.22 грн
100+49.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDH04G65C5XKSA2 IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947
IDH04G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 4A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
на замовлення 1636 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.86 грн
50+109.14 грн
100+89.80 грн
500+71.31 грн
1000+60.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDW10G65C5XKSA1 IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc
IDW10G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+367.66 грн
30+197.77 грн
120+163.18 грн
В кошику  од. на суму  грн.
IDW12G65C5XKSA1 IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f
IDW12G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+417.00 грн
30+224.74 грн
120+187.85 грн
В кошику  од. на суму  грн.
IDW24G65C5BXKSA2 Infineon-IDW24G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44b312b44906
IDW24G65C5BXKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+841.97 грн
10+695.14 грн
240+545.22 грн
В кошику  од. на суму  грн.
IDW40G65C5BXKSA2 Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1
IDW40G65C5BXKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
на замовлення 344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1238.28 грн
30+965.48 грн
120+908.68 грн
В кошику  од. на суму  грн.
TLE7250GVIOXUMA2 Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56
TLE7250GVIOXUMA2
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
на замовлення 8289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.53 грн
10+118.25 грн
25+107.90 грн
100+90.57 грн
250+85.48 грн
500+82.41 грн
1000+78.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDT04S60CHKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IDT08S60CHKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IDT16S60CHKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QSAGXUMA1 Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119
ICE5QSAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QSAGXUMA1 Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119
ICE5QSAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
на замовлення 2228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+109.82 грн
10+77.02 грн
25+69.86 грн
100+58.18 грн
250+54.66 грн
500+52.53 грн
1000+49.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPT60R028G7XTMA1 Infineon-IPT60R028G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e82df70e30
IPT60R028G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 75A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 28.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+524.55 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R080G7XTMA1 Infineon-IPT60R080G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e8059d0e2c
IPT60R080G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 29A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+220.99 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R050G7XTMA1 Infineon-IPT60R050G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5974e0e26
IPT60R050G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+284.37 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a
IPT60R102G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
товару немає в наявності
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IPT60R125G7XTMA1 Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e
IPT60R125G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
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IPT60R150G7XTMA1 Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28
IPT60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4
IPD60R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9
IPD60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+36.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
IPL60R365P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 Infineon-IPL60R185P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc50683cb7
IPL60R185P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+74.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPA60R360P7XKSA1 Infineon-IPA60R360P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6dde41500b
IPA60R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
IPP60R180P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+194.97 грн
50+80.39 грн
100+77.87 грн
500+64.87 грн
1000+59.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R180P7XKSA1 Infineon-IPW60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5c38a2153f7a
IPW60R180P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPZ60R037P7XKSA1
IPZ60R037P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R360P7SXKSA1 Infineon-IPAW60R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6e87ab5017
IPAW60R360P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPT60R102G7XTMA1 Infineon-IPT60R102G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e7ed8b0e2a
IPT60R102G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+389.15 грн
10+270.67 грн
100+194.50 грн
500+152.03 грн
1000+150.25 грн
В кошику  од. на суму  грн.
IPT60R125G7XTMA1 Infineon-IPT60R125G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13e819a60e2e
IPT60R125G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R150G7XTMA1 Infineon-IPT60R150G7-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a13d5af7b0e28
IPT60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 17A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1304 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+314.34 грн
10+199.17 грн
100+140.56 грн
500+108.43 грн
1000+101.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R600P7ATMA1 Infineon-IPD60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be5a5523cc4
IPD60R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 2196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.17 грн
10+73.41 грн
100+49.11 грн
500+36.28 грн
1000+33.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD60R360P7ATMA1 Infineon-IPD60R360P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc6a473cb9
IPD60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 5787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.83 грн
10+51.96 грн
100+42.47 грн
500+38.36 грн
1000+36.89 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
IPL60R365P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+163.14 грн
10+107.06 грн
100+76.61 грн
500+59.24 грн
1000+55.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R185P7AUMA1 Infineon-IPL60R185P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc50683cb7
IPL60R185P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 4719 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.64 грн
10+144.91 грн
100+100.42 грн
500+76.39 грн
1000+70.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FM25L04B-GA4
FM25L04B-GA4
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM25L04B-GA4TR
FM25L04B-GA4TR
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB91248SZPFV-GS-525K5E1
MB91248SZPFV-GS-525K5E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB91F362GBPFVS-GK5E2
MB91F362GBPFVS-GK5E2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR50 RISC
Data Converters: A/D 8x10b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Number of I/O: 160
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SIPC30N60CFDX1SA1
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V
товару немає в наявності
В кошику  од. на суму  грн.
SIPC26N60CFDX1SA1
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V
Packaging: Box
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
IRL40SC209
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+117.52 грн
1600+112.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRL40SC228 Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664
IRL40SC228
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+118.54 грн
1600+113.38 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
IRL40SC209
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 478A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15270 pF @ 25 V
на замовлення 1690 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+319.92 грн
10+203.69 грн
100+144.24 грн
В кошику  од. на суму  грн.
IRL40SC228 Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664
IRL40SC228
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 557A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 557A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 307 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19680 pF @ 25 V
на замовлення 1674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+323.10 грн
10+205.38 грн
100+145.43 грн
В кошику  од. на суму  грн.
IRS2008STRPBF Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112
IRS2008STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRS2008STRPBF Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112
IRS2008STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1565 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.89 грн
10+40.69 грн
25+36.63 грн
100+30.18 грн
250+28.18 грн
500+26.98 грн
1000+25.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CH376-80032
Виробник: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CH376-80033
Виробник: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI000M
S25FL032P0XMFI000M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI010M
S25FL032P0XMFI010M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFI013M
S25FL032P0XMFI013M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFV001M
S25FL032P0XMFV001M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
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