Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148832) > Сторінка 332 з 2481
| Фото | Назва | Виробник | Інформація |
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IPB180P04P4L02ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 180A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 410µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IPP120P04P4L03AKSA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 340µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 181 шт: термін постачання 21-31 дні (днів) |
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TLF80511TFV50ATMA2 | Infineon Technologies |
Description: IC REG LIN 5V 400MA TO252-3-11Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 55dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4529 шт: термін постачання 21-31 дні (днів) |
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TLF80511TCATMA2 | Infineon Technologies |
Description: IC REG LIN 5V 400MA PG-TO263-3-1Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 5V PSRR: 55dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2559 шт: термін постачання 21-31 дні (днів) |
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TLF80511TFV33ATMA2 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA TO252-3-11Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 55dB (100Hz) Voltage Dropout (Max): 0.65V @ 250mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA Qualification: AEC-Q100 |
на замовлення 2306 шт: термін постачання 21-31 дні (днів) |
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SLB9670VQ20FW785XTMA1 | Infineon Technologies |
Description: IC TPM VQFNPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Program Memory Type: NVM (6.8kB) Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: PG-VQFN-32-13 Part Status: Active Number of I/O: 1 DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SLB9670VQ20FW785XTMA1 | Infineon Technologies |
Description: IC TPM VQFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Program Memory Type: NVM (6.8kB) Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: PG-VQFN-32-13 Part Status: Active Number of I/O: 1 DigiKey Programmable: Not Verified |
на замовлення 6875 шт: термін постачання 21-31 дні (днів) |
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IPI80N07S4-05 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS112AE3045ANTMA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS112A | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Part Status: Obsolete |
на замовлення 3397 шт: термін постачання 21-31 дні (днів) |
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IPP029N06NAK5A1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 75µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS117E3044A | Infineon Technologies |
Description: AUTOMOTIVELOW-SIDE SWITCHPackaging: Bulk Features: Auto Restart, Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS133NKSA1 | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVERPackaging: Bulk Features: Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS117E3045A | Infineon Technologies |
Description: AUTOMOTIVELOW-SIDE SWITCHPackaging: Bulk Features: Auto Restart, Slew Rate Controlled Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-5 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS133E3064 | Infineon Technologies |
Description: AUTOMOTIVELOW-SIDE SWITCHPackaging: Bulk Features: Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS133E3064NK | Infineon Technologies |
Description: AUTOMOTIVELOW-SIDE SWITCHPackaging: Bulk Features: Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP085N06LGIN | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS441RS | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVERPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS441RSAKSA1 | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVER Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS426L1E3062ANTMA1 | Infineon Technologies |
Description: AUTOMOTIVE HIGH SIDE SWITCHPackaging: Bulk Features: Auto Restart Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 5.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-5-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS5240G | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVERPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BBY53-05WE6327 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCV26E6327 | Infineon Technologies |
Description: TRANS PNP DARL 30V 0.5A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BBY57-02VH6327 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODEPackaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-SC79-2-1 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 3.7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BCW 60C E6327 | Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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IPP50CN10NGHKSA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
| BCV61CE6327 | Infineon Technologies |
Description: TRANSISTORS FOR CURRENT MIRROR Packaging: Bulk Voltage - Rated: 30V Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 100mA Mounting Type: Surface Mount Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Supplier Device Package: PG-SOT143-4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP50R299CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IFS150B12N3T4_B31 | Infineon Technologies |
Description: IGBT, 150A, 1200V, N-CHANNEL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP50R199CPXK | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 217 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BTS7710G | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 8A PDSO28Packaging: Bulk Features: Slew Rate Controlled, Status Flag Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 40mOhm LS, 70mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 8A Current - Peak Output: 15A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: P-DSO-28 Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCV62CE6327 | Infineon Technologies |
Description: TRANSISTORS FOR CURRENT MIRROR |
на замовлення 4629 шт: термін постачання 21-31 дні (днів) |
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BCV26E327 | Infineon Technologies |
Description: TRANS PNP DARL 30V 0.5A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BBY5305WE6327 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODEPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: SOT-323 Voltage - Peak Reverse (Max): 6 V Capacitance Ratio: 2.6 |
на замовлення 6719 шт: термін постачання 21-31 дні (днів) |
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BBY53-02VH6327 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODEPackaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: PG-SC79-2 Part Status: Active Voltage - Peak Reverse (Max): 6 V Capacitance Ratio: 2.2 |
на замовлення 2325 шт: термін постачання 21-31 дні (днів) |
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| BTS724NTMA1 | Infineon Technologies |
Description: AUTOMOTIVE HIGH SIDE SWITCH Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BBY53-05WH6327 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC 849B E6327 | Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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IPP260N06N3G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 11µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R520E6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC 858CE6327 | Infineon Technologies |
Description: TRANS PNP 30V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BCW60BE6327 | Infineon Technologies |
Description: TRANS NPN 32V 0.1A PG-SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R600P7 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Part Status: Active |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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BC 848B E6327 | Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BTS612N1E3128ANTMA1 | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVERPackaging: Bulk Features: Auto Restart, Slew Rate Controlled Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: Parallel Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: P-TO263-7-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCV61BE6327 | Infineon Technologies |
Description: TRANSISTORS FOR CURRENT MIRRORPackaging: Bulk Voltage - Rated: 30V Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 100mA Mounting Type: Surface Mount Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Supplier Device Package: PG-SOT-143-3D Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R190C3 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R520C6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BC 858C E6327 | Infineon Technologies |
Description: TRANS PNP 30V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BCW 61C E6327 | Infineon Technologies |
Description: TRANS PNP 32V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC 850B E6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A SOT23 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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IPP60R600CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPP60R520CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IPP60R750E6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 170µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V |
на замовлення 1021 шт: термін постачання 21-31 дні (днів) |
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IPP50R520CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
на замовлення 8144 шт: термін постачання 21-31 дні (днів) |
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| IPP60R450E6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 280µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPS075N03LG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO251-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R600E6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BTS7810K | Infineon Technologies |
Description: BUFFER/INVERTER PERIPHL DRIVERPackaging: Bulk Package / Case: TO-263-18 (15 Leads + 3 Tabs) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Applications: General Purpose Technology: DMOS Supplier Device Package: P-TO263-15-1 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BC 860B E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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| IPB180P04P4L02ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 102.91 грн |
| 2000+ | 98.99 грн |
| IPP120P04P4L03AKSA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 181 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 391.89 грн |
| 50+ | 195.23 грн |
| 100+ | 177.62 грн |
| TLF80511TFV50ATMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4529 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.68 грн |
| 10+ | 71.77 грн |
| 25+ | 65.06 грн |
| 100+ | 54.14 грн |
| 250+ | 50.83 грн |
| 500+ | 48.84 грн |
| 1000+ | 46.43 грн |
| TLF80511TCATMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2559 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.62 грн |
| 10+ | 98.13 грн |
| 25+ | 89.35 грн |
| 100+ | 74.76 грн |
| 250+ | 70.43 грн |
| 500+ | 67.82 грн |
| TLF80511TFV33ATMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.65V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.65V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
на замовлення 2306 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.81 грн |
| 10+ | 75.97 грн |
| 25+ | 68.95 грн |
| 100+ | 57.44 грн |
| 250+ | 53.96 грн |
| 500+ | 51.87 грн |
| 1000+ | 49.33 грн |
| SLB9670VQ20FW785XTMA1 |
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Виробник: Infineon Technologies
Description: IC TPM VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Description: IC TPM VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 139.35 грн |
| SLB9670VQ20FW785XTMA1 |
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Виробник: Infineon Technologies
Description: IC TPM VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Description: IC TPM VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
на замовлення 6875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 263.54 грн |
| 10+ | 191.16 грн |
| 25+ | 175.47 грн |
| 100+ | 148.54 грн |
| 250+ | 140.85 грн |
| 500+ | 136.21 грн |
| 1000+ | 130.22 грн |
| 2500+ | 126.26 грн |
| IPI80N07S4-05 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| BTS112AE3045ANTMA1 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
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| BTS112A |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
на замовлення 3397 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 195.18 грн |
| IPP029N06NAK5A1 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
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| BTS117E3044A |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
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| BTS133NKSA1 |
![]() |
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
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В кошику
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| BTS117E3045A |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
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| BTS133E3064 |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
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В кошику
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| BTS133E3064NK |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
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В кошику
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| IPP085N06LGIN |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
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| BTS441RS |
![]() |
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
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В кошику
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| BTS441RSAKSA1 |
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
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| BTS426L1E3062ANTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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| BTS5240G |
![]() |
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
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| BBY53-05WE6327 |
![]() |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Description: VARIABLE CAPACITANCE DIODE
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| BCV26E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
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| BBY57-02VH6327 |
![]() |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.7
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.7
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| BCW 60C E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7397+ | 3.42 грн |
| IPP50CN10NGHKSA1 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BCV61CE6327 |
Виробник: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT143-4
Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT143-4
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| IPP50R299CP |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| IFS150B12N3T4_B31 |
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Виробник: Infineon Technologies
Description: IGBT, 150A, 1200V, N-CHANNEL
Description: IGBT, 150A, 1200V, N-CHANNEL
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| IPP50R199CPXK |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 217 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BTS7710G |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 8A PDSO28
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 8A
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 8A PDSO28
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 8A
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BCV62CE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
Description: TRANSISTORS FOR CURRENT MIRROR
на замовлення 4629 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3480+ | 7.41 грн |
| BCV26E327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
товару немає в наявності
В кошику
од. на суму грн.
| BBY5305WE6327 |
![]() |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
на замовлення 6719 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2308+ | 9.92 грн |
| BBY53-02VH6327 |
![]() |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.2
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.2
на замовлення 2325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2325+ | 11.12 грн |
| BTS724NTMA1 |
Виробник: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BBY53-05WH6327 |
![]() |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Description: VARIABLE CAPACITANCE DIODE
товару немає в наявності
В кошику
од. на суму грн.
| BC 849B E6327 |
![]() |
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Description: BIPOLAR GEN PURPOSE TRANSISTOR
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPP260N06N3G |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| IPP60R520E6 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BC 858CE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8460+ | 3.42 грн |
| BCW60BE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
товару немає в наявності
В кошику
од. на суму грн.
| IPP60R600P7 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 367+ | 70.16 грн |
| BC 848B E6327 |
![]() |
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Description: BIPOLAR GEN PURPOSE TRANSISTOR
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11269+ | 2.39 грн |
| BTS612N1E3128ANTMA1 |
![]() |
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BCV61BE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| IPP60R190C3 |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| IPP60R520C6 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BC 858C E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9000+ | 3.42 грн |
| BCW 61C E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
товару немає в наявності
В кошику
од. на суму грн.
| BC 850B E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Description: TRANS NPN 45V 0.1A SOT23
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7397+ | 3.13 грн |
| IPP60R600CP |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 295+ | 74.82 грн |
| IPP60R520CP |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 258+ | 85.09 грн |
| IPP60R750E6 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
на замовлення 1021 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 547+ | 47.06 грн |
| IPP50R520CP |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
на замовлення 8144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 442+ | 54.43 грн |
| IPP60R450E6 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPS075N03LG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IPP60R600E6 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BTS7810K |
![]() |
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Package / Case: TO-263-18 (15 Leads + 3 Tabs)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Applications: General Purpose
Technology: DMOS
Supplier Device Package: P-TO263-15-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Package / Case: TO-263-18 (15 Leads + 3 Tabs)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Applications: General Purpose
Technology: DMOS
Supplier Device Package: P-TO263-15-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BC 860B E6327 |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8149+ | 3.44 грн |































