Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123034) > Сторінка 334 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
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BFP740E6327 | Infineon Technologies |
Description: RF TRANS NPN 4.7V 42GHZ PGSOT343Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 27dB Power - Max: 160mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Supplier Device Package: PG-SOT343-4 Part Status: Active |
на замовлення 31830 шт: термін постачання 21-31 дні (днів) |
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BC848CE6327 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT23Packaging: Bulk Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 48520 шт: термін постачання 21-31 дні (днів) |
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BC847CWH6778 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BC847BWE6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A PG-SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 84100 шт: термін постачання 21-31 дні (днів) |
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BC848AE6327 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
товару немає в наявності |
Мінімальне замовлення: 8689 шт В кошику од. на суму грн. | ||
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BC848BL3E6327 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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| BFP720FH6327 | Infineon Technologies |
Description: RF TRANSISTOR, X BAND, NPNPackaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 15dB Power - Max: 100mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 1dB @ 10GHz Supplier Device Package: 4-TSFP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BC850BWE6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BFP7220ESDH6327 | Infineon Technologies |
Description: LOW-NOISE SIGE:C TRANSISTOR Packaging: Bulk Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||
| BFP720FE6327 | Infineon Technologies |
Description: RF TRANSISTOR, X BAND, NPNPackaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 28dB Power - Max: 100mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Supplier Device Package: 4-TSFP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BFP720H6327 | Infineon Technologies |
Description: RF TRANSISTOR, X BAND, NPNPackaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 28.5dB Power - Max: 100mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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| BC848BE6327 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||
| FF300R06KE3_B2 | Infineon Technologies | Description: IGBT MODULE |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||
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BAR63 | Infineon Technologies |
Description: SILICON PIN DIODEPackaging: Bulk Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BAL74E6327 | Infineon Technologies |
Description: DIODE GEN PURP 50V 250MA SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BAR63-02LE6327 | Infineon Technologies |
Description: PIN DIODE, 50V V(BR)Packaging: Bulk Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-TSLP-2-1 Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BC849CWE6327 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A PG-SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
на замовлення 9997 шт: термін постачання 21-31 дні (днів) |
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BAR6403WE6327 | Infineon Technologies |
Description: RF PIN DIODE > ANTENNA SWITCH |
товару немає в наявності |
Мінімальне замовлення: 4466 шт В кошику од. на суму грн. | ||
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BAR63-04WH6327 | Infineon Technologies |
Description: RF PIN DIODE > ANTENNA SWITCHPackaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BC848CWH6327 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BAR63-05WH6327 | Infineon Technologies |
Description: PIN DIODE, 50V V(BR)Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BFR193FH6327 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ PG TSFP-3Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 19dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-TSFP-3-1 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
| BAR 64-06WH6327 | Infineon Technologies |
Description: RF PIN DIODE > ANTENNA SWITCHPackaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||
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BC848BE6433 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
на замовлення 78655 шт: термін постачання 21-31 дні (днів) |
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| BAR65-02VH6327 | Infineon Technologies |
Description: PIN DIODEPower Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SC79-2-1 Voltage - Peak Reverse (Max): 30V Resistance @ If, F: 900mOhm @ 10mA, 100MHz Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - Single Package / Case: SC-79, SOD-523 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BFS17WE6327 | Infineon Technologies |
Description: RF BIPOLAR TRANSISTORVoltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 25mA Power - Max: 280mW Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk Part Status: Active Supplier Device Package: SOT-323 Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Frequency - Transition: 1.4GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BAR63-03WE6433 | Infineon Technologies |
Description: PIN DIODE, 50V V(BR)Packaging: Bulk Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOD323-3D Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||
| BAR6304WH6327 | Infineon Technologies |
Description: RF PIN DIODE > ANTENNA SWITCHPackaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BAR6405E6327 | Infineon Technologies |
Description: PIN DIODE, 150V V(BR)Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BC850CWE6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BC850BE6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A SOT23Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN |
на замовлення 35665 шт: термін постачання 21-31 дні (днів) |
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| IRFIRF7314PBF | Infineon Technologies |
Description: P-CHANNEL POWER MOSFET Part Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BAR63-05E6433 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW PG-SOT23Power Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 1Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - 1 Pair Common Cathode Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
| BFS-17-SE | Infineon Technologies |
Description: LOW-NOISE SI TRANSISTOR Part Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BAR6406WE6327 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SOT-323Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: SOT-323 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BFR750L3RHE6327 | Infineon Technologies |
Description: RF BIPOLAR TRANSISTORPackaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 360mW Current - Collector (Ic) (Max): 90mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz Supplier Device Package: PG-TSLP-3 Part Status: Active |
на замовлення 36420 шт: термін постачання 21-31 дні (днів) |
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| BAR64-06WH6327 | Infineon Technologies |
Description: RF PIN DIODE > ANTENNA SWITCHPackaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BC856BE6327 | Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTORMounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: PG-SOT23-3-1 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BAR 67-04 E6327 | Infineon Technologies |
Description: PIN DIODE, 150V V(BR) Power Dissipation (Max): 250 mW Current - Max: 200 mA Supplier Device Package: PG-SOT23 Voltage - Peak Reverse (Max): 150V Resistance @ If, F: 1Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - 1 Pair Series Connection Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BAR6302WE6327 | Infineon Technologies |
Description: PIN DIODE, 50V V(BR)Power Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SCD80-2 Voltage - Peak Reverse (Max): 50V Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - Single Package / Case: SC-80 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
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BG5120KE6327 | Infineon Technologies |
Description: RF MOSFET 5V SOT363Qualification: AEC-Q101 Grade: Automotive Current - Test: 10 mA Voltage - Test: 5 V Voltage - Rated: 8 V Part Status: Active Supplier Device Package: SOT-363 Noise Figure: 1.1dB Technology: MOSFET (Metal Oxide) Gain: 30dB Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Current Rating (Amps): 10µA Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
на замовлення 879000 шт: термін постачання 21-31 дні (днів) |
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BFR93AWE6327 | Infineon Technologies |
Description: RF BIPOLAR TRANSISTORPart Status: Active Supplier Device Package: SOT-323 Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Frequency - Transition: 6GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 90mA Power - Max: 300mW Gain: 10.5dB ~ 15.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
| BAR63-06WH6327 | Infineon Technologies |
Description: RF PIN DIODE > ANTENNA SWITCHPower Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SOT323-3 Voltage - Peak Reverse (Max): 50V Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - 1 Pair Common Anode Package / Case: SC-70, SOT-323 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BAR6302VE6327 | Infineon Technologies |
Description: PIN DIODE, 50V V(BR)Diode Type: PIN - Single Package / Case: SC-79, SOD-523 Packaging: Bulk Power Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SC79-2 Voltage - Peak Reverse (Max): 50V Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Operating Temperature: 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||
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BC849BE6327 | Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTORPower - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 53990 шт: термін постачання 21-31 дні (днів) |
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| BAR6405WE6433 | Infineon Technologies |
Description: PIN DIODE, 150V V(BR)Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BC849CE6327 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
BC850CE6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A SOT23Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
BAS40-06B5000 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 120MA SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
на замовлення 137000 шт: термін постачання 21-31 дні (днів) |
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BAS 40-06 E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKY |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
BAS 70-04 E6433 | Infineon Technologies |
Description: SCHOTTKY DIODE |
на замовлення 17100 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5453 шт В кошику од. на суму грн. | ||
| BGF106CE6328 | Infineon Technologies |
Description: SIM CARD INTERFACE FILTERPackaging: Bulk Voltage - Rated: 5.5V Package / Case: 8-UFBGA, WLCSP Size / Dimension: 0.047" L x 0.047" W (1.20mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 47Ohm, 100Ohm, C = 16.5pF (Total) Height: 0.026" (0.65mm) Attenuation Value: 16.9dB @ 800MHz ~ 4GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC Center / Cutoff Frequency: 290MHz (Cutoff) ESD Protection: Yes Part Status: Active Number of Channels: 3 |
на замовлення 562174 шт: термін постачання 21-31 дні (днів) |
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BGA614E6327 | Infineon Technologies |
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6Packaging: Bulk Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1575.42MHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 15.5dB Current - Supply: 4.4mA Noise Figure: 0.7dB P1dB: -5dBm Test Frequency: 1575.42MHz Supplier Device Package: PG-TSNP-7-6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
BAR6302WH6327 | Infineon Technologies |
Description: PIN DIODE, 50V V(BR)Packaging: Bulk Package / Case: SC-80 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: SCD-80 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
| BAR67-04E6327 | Infineon Technologies |
Description: PIN DIODE, 150V V(BR)Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 200 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||
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BAS40-05WH6327 | Infineon Technologies |
Description: DIODE ARR SCHOT 40V 120MA SOT323Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT323-3 Current - Average Rectified (Io) (per Diode): 120mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
BAS125-04WE6327 | Infineon Technologies |
Description: DIODE ARR SCHOTT 25V PG-SOT323-3Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk Current - Reverse Leakage @ Vr: 150 nA @ 25 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA Voltage - DC Reverse (Vr) (Max): 25 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT323-3 Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Schottky |
на замовлення 4850 шт: термін постачання 21-31 дні (днів) |
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BGA420E6433 | Infineon Technologies |
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-4Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 3GHz RF Type: General Purpose Voltage - Supply: 3V ~ 6V Gain: 13dB Current - Supply: 6.7mA Noise Figure: 2.3dB P1dB: -2.5dBm Test Frequency: 1GHz Supplier Device Package: PG-SOT343-4 |
на замовлення 27466 шт: термін постачання 21-31 дні (днів) |
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BC858BWE6327 | Infineon Technologies |
Description: TRANS PNP 30V 0.1A PG-SOT323-3-1Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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BAS40-06WH6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKYPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BFP740E6327 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ PGSOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Description: RF TRANS NPN 4.7V 42GHZ PGSOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
на замовлення 31830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 616+ | 32.20 грн |
| BC848CE6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 48520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8689+ | 2.12 грн |
| BC847CWH6778 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| BC847BWE6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A PG-SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 84100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8955+ | 1.98 грн |
| BC848AE6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товару немає в наявності
Мінімальне замовлення: 8689 шт
В кошику
од. на суму грн.
| BC848BL3E6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3202+ | 6.36 грн |
| BFP720FH6327 |
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Виробник: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 1dB @ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 1dB @ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BC850BWE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| BFP7220ESDH6327 |
Виробник: Infineon Technologies
Description: LOW-NOISE SIGE:C TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: LOW-NOISE SIGE:C TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BFP720FE6327 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
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| BFP720H6327 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1537+ | 14.67 грн |
| BC848BE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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| FF300R06KE3_B2 |
Виробник: Infineon Technologies
Description: IGBT MODULE
Description: IGBT MODULE
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
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| BAR63 |
![]() |
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7059+ | 2.63 грн |
| BAL74E6327 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 50V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| BAR63-02LE6327 |
![]() |
Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BC849CWE6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
Description: TRANS NPN 30V 0.1A PG-SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 9997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8955+ | 1.98 грн |
| BAR6403WE6327 |
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Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Description: RF PIN DIODE > ANTENNA SWITCH
товару немає в наявності
Мінімальне замовлення: 4466 шт
В кошику
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| BAR63-04WH6327 |
![]() |
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BC848CWH6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
Description: TRANS NPN 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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| BAR63-05WH6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BFR193FH6327 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG TSFP-3
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: RF TRANS NPN 12V 8GHZ PG TSFP-3
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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| BAR 64-06WH6327 |
![]() |
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BC848BE6433 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 78655 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8689+ | 2.12 грн |
| BAR65-02VH6327 |
![]() |
Виробник: Infineon Technologies
Description: PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Bulk
Description: PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Bulk
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| BFS17WE6327 |
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Виробник: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Part Status: Active
Supplier Device Package: SOT-323
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Frequency - Transition: 1.4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Description: RF BIPOLAR TRANSISTOR
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Part Status: Active
Supplier Device Package: SOT-323
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Frequency - Transition: 1.4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
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| BAR63-03WE6433 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
Мінімальне замовлення: 7000 шт
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од. на суму грн.
| BAR6304WH6327 |
![]() |
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BAR6405E6327 |
![]() |
Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BC850CWE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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| BC850BE6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Description: TRANS NPN 45V 0.1A SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
на замовлення 35665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6836+ | 2.83 грн |
| IRFIRF7314PBF |
Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Description: P-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
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| BAR63-05E6433 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: RF DIODE PIN 50V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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| BFS-17-SE |
Виробник: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Part Status: Active
Packaging: Bulk
Description: LOW-NOISE SI TRANSISTOR
Part Status: Active
Packaging: Bulk
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| BAR6406WE6327 |
![]() |
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: SOT-323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: SOT-323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2834+ | 7.24 грн |
| BFR750L3RHE6327 |
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Виробник: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
на замовлення 36420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 944+ | 22.90 грн |
| BAR64-06WH6327 |
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Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BC856BE6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
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| BAR 67-04 E6327 |
Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Power Dissipation (Max): 250 mW
Current - Max: 200 mA
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 150V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: PIN DIODE, 150V V(BR)
Power Dissipation (Max): 250 mW
Current - Max: 200 mA
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 150V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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| BAR6302WE6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-80
Packaging: Bulk
Description: PIN DIODE, 50V V(BR)
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-80
Packaging: Bulk
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| BG5120KE6327 |
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Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT363
Qualification: AEC-Q101
Grade: Automotive
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Active
Supplier Device Package: SOT-363
Noise Figure: 1.1dB
Technology: MOSFET (Metal Oxide)
Gain: 30dB
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Current Rating (Amps): 10µA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: RF MOSFET 5V SOT363
Qualification: AEC-Q101
Grade: Automotive
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Active
Supplier Device Package: SOT-363
Noise Figure: 1.1dB
Technology: MOSFET (Metal Oxide)
Gain: 30dB
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Current Rating (Amps): 10µA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
на замовлення 879000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3463+ | 6.26 грн |
| BFR93AWE6327 |
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Виробник: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: SOT-323
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 6GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 90mA
Power - Max: 300mW
Gain: 10.5dB ~ 15.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: RF BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: SOT-323
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 6GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 90mA
Power - Max: 300mW
Gain: 10.5dB ~ 15.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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| BAR63-06WH6327 |
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Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: RF PIN DIODE > ANTENNA SWITCH
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Bulk
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| BAR6302VE6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Bulk
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Description: PIN DIODE, 50V V(BR)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Bulk
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
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Мінімальне замовлення: 1000 шт
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| BC849BE6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 53990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8689+ | 2.12 грн |
| BAR6405WE6433 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BC849CE6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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| BC850CE6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Description: TRANS NPN 45V 0.1A SOT23
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
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| BAS40-06B5000 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 137000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7059+ | 2.63 грн |
| BAS 40-06 E6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
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| BAS 70-04 E6433 |
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Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Description: SCHOTTKY DIODE
на замовлення 17100 шт:
термін постачання 21-31 дні (днів)
| BGF106CE6328 |
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Виробник: Infineon Technologies
Description: SIM CARD INTERFACE FILTER
Packaging: Bulk
Voltage - Rated: 5.5V
Package / Case: 8-UFBGA, WLCSP
Size / Dimension: 0.047" L x 0.047" W (1.20mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 16.5pF (Total)
Height: 0.026" (0.65mm)
Attenuation Value: 16.9dB @ 800MHz ~ 4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Center / Cutoff Frequency: 290MHz (Cutoff)
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
Description: SIM CARD INTERFACE FILTER
Packaging: Bulk
Voltage - Rated: 5.5V
Package / Case: 8-UFBGA, WLCSP
Size / Dimension: 0.047" L x 0.047" W (1.20mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 16.5pF (Total)
Height: 0.026" (0.65mm)
Attenuation Value: 16.9dB @ 800MHz ~ 4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Center / Cutoff Frequency: 290MHz (Cutoff)
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
на замовлення 562174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2597+ | 8.48 грн |
| BGA614E6327 |
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Виробник: Infineon Technologies
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Part Status: Active
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Part Status: Active
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| BAR6302WH6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BAR67-04E6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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| BAS40-05WH6327 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: DIODE ARR SCHOT 40V 120MA SOT323
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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| BAS125-04WE6327 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 25V PG-SOT323-3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Description: DIODE ARR SCHOTT 25V PG-SOT323-3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT323-3
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2025+ | 10.04 грн |
| BGA420E6433 |
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Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4
на замовлення 27466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 787+ | 25.34 грн |
| BC858BWE6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT323-3-1
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
Description: TRANS PNP 30V 0.1A PG-SOT323-3-1
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8955+ | 1.99 грн |
| BAS40-06WH6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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