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SIGC81T60SNCX7SA1 SIGC81T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
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SIDC14D60C8X1SA2 SIDC14D60C8X1SA2 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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REFICL5102HVU150WTOBO1 REFICL5102HVU150WTOBO1 Infineon Technologies Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023 Description: EVAL REF-ICL5102-U150W
Packaging: Box
Voltage - Output: 17V ~ 48V
Voltage - Input: 277 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: ICL5102HV
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+16476.43 грн
В кошику  од. на суму  грн.
FS380R12A6T4BBPSA1 FS380R12A6T4BBPSA1 Infineon Technologies Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1 Description: IGBT MODULE 1200V 380A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+46133.86 грн
В кошику  од. на суму  грн.
TLE92108232QXXUMA1 TLE92108232QXXUMA1 Infineon Technologies Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
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FS950R08A6P2BBPSA1 FS950R08A6P2BBPSA1 Infineon Technologies Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4 Description: IGBT MODULE 750V 950A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+24911.54 грн
В кошику  од. на суму  грн.
TLS715B0TSNPBOARDTOBO1 TLS715B0TSNPBOARDTOBO1 Infineon Technologies Description: EVAL TLS715B0NAV50 LDO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 40V
Current - Output: 150mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS715B0NAV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2053.80 грн
В кошику  од. на суму  грн.
TLE9210823QXAPPKITTOBO1 TLE9210823QXAPPKITTOBO1 Infineon Technologies TLE92108-23QX_APPKIT_Web.pdf Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+3985.34 грн
В кошику  од. на суму  грн.
EVALM5E1B1245NSICTOBO1 EVALM5E1B1245NSICTOBO1 Infineon Technologies Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27 Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
товару немає в наявності
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TLE92108231QXXUMA1 TLE92108231QXXUMA1 Infineon Technologies Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+139.78 грн
5000+132.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+115.69 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
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TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
3+109.56 грн
10+76.75 грн
25+69.63 грн
100+57.98 грн
250+54.47 грн
500+52.35 грн
1000+49.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
2+237.37 грн
10+171.70 грн
25+157.39 грн
100+132.99 грн
250+125.96 грн
500+121.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRAUDAMP23 IRAUDAMP23 Infineon Technologies Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4 Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+20234.72 грн
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
товару немає в наявності
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TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
2+297.71 грн
5+256.56 грн
10+245.40 грн
25+217.96 грн
50+209.46 грн
100+201.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+326.29 грн
5+281.79 грн
10+269.79 грн
25+239.71 грн
50+230.54 грн
100+222.11 грн
В кошику  од. на суму  грн.
BSC0403NSATMA1 BSC0403NSATMA1 Infineon Technologies Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215 Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
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XDPS21071XUMA1 XDPS21071XUMA1 Infineon Technologies Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14 Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
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REF_XDPS21071_45W1 REF_XDPS21071_45W1 Infineon Technologies Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668 Description: 45W USB-PD 3.0 TYPE C CHARGER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPAN70R360P7SAUMA1 Infineon Technologies Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3 Description: 700V, N-CH MOSFET, TO220 FULLPAK
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 Infineon Technologies Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
1+650.20 грн
30+369.17 грн
120+314.06 грн
В кошику  од. на суму  грн.
IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 528 шт:
термін постачання 21-31 дні (днів)
4+103.21 грн
50+52.46 грн
100+49.05 грн
500+36.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IMW65R048M1HXKSA1 IMW65R048M1HXKSA1 Infineon Technologies Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 907 шт:
термін постачання 21-31 дні (днів)
1+672.43 грн
30+381.30 грн
120+323.75 грн
510+294.82 грн
В кошику  од. на суму  грн.
IPS60R600PFD7SAKMA1 IPS60R600PFD7SAKMA1 Infineon Technologies Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797 Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMW65R107M1HXKSA1 IMW65R107M1HXKSA1 Infineon Technologies Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
1+493.01 грн
30+270.07 грн
120+227.98 грн
В кошику  од. на суму  грн.
IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7SAKMA1 Infineon Technologies Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R072M1HXKSA1 IMZA65R072M1HXKSA1 Infineon Technologies Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
1+570.01 грн
30+316.04 грн
120+267.88 грн
В кошику  од. на суму  грн.
IMW65R027M1HXKSA1 IMW65R027M1HXKSA1 Infineon Technologies Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 505 шт:
термін постачання 21-31 дні (днів)
1+907.42 грн
30+530.22 грн
120+454.89 грн
В кошику  од. на суму  грн.
IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R022S7XKSA1 IPP60R022S7XKSA1 Infineon Technologies Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
на замовлення 592 шт:
термін постачання 21-31 дні (днів)
1+724.82 грн
50+382.29 грн
100+364.19 грн
500+322.03 грн
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+13.13 грн
6000+11.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPS60R360PFD7SAKMA1 IPS60R360PFD7SAKMA1 Infineon Technologies Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794 Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+24.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IMZA65R107M1HXKSA1 IMZA65R107M1HXKSA1 Infineon Technologies Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
1+472.37 грн
30+258.86 грн
120+218.57 грн
В кошику  од. на суму  грн.
IPS60R210PFD7SAKMA1 IPS60R210PFD7SAKMA1 Infineon Technologies Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791 Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R027M1HXKSA1 IMZA65R027M1HXKSA1 Infineon Technologies Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 266 шт:
термін постачання 21-31 дні (днів)
1+1152.73 грн
30+684.12 грн
120+607.70 грн
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 12061 шт:
термін постачання 21-31 дні (днів)
7+50.02 грн
10+46.10 грн
100+35.86 грн
500+31.11 грн
1000+27.48 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
6+59.54 грн
10+44.49 грн
100+37.54 грн
500+33.89 грн
1000+31.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 2876 шт:
термін постачання 21-31 дні (днів)
3+127.82 грн
10+82.72 грн
100+57.66 грн
500+44.07 грн
1000+39.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 15079 шт:
термін постачання 21-31 дні (днів)
7+50.02 грн
10+34.71 грн
100+23.65 грн
500+17.92 грн
1000+16.17 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FR900R12IP4DBPSA1 FR900R12IP4DBPSA1 Infineon Technologies Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+83826.27 грн
В кошику  од. на суму  грн.
IDK20G120C5XTMA1 IDK20G120C5XTMA1 Infineon Technologies Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47 Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
товару немає в наявності
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IDK20G120C5XTMA1 IDK20G120C5XTMA1 Infineon Technologies Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47 Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
1+636.70 грн
10+418.40 грн
100+308.54 грн
В кошику  од. на суму  грн.
F3L200R07W2S5FB11BOMA1 F3L200R07W2S5FB11BOMA1 Infineon Technologies Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
товару немає в наявності
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FS3L40R07W2H5FB11BOMA1 FS3L40R07W2H5FB11BOMA1 Infineon Technologies Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товару немає в наявності
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FP10R12W1T7B3BOMA1 FP10R12W1T7B3BOMA1 Infineon Technologies Infineon-FP10R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1856f6372d4 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A (Typ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+2874.68 грн
В кошику  од. на суму  грн.
DF150R12W1H3FB11BOMA1 DF150R12W1H3FB11BOMA1 Infineon Technologies Description: IGBT MODULE LOW POWER EASY
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
1ED44175N01BXTSA1 1ED44175N01BXTSA1 Infineon Technologies Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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IM240S6Y1BAKMA1 IM240S6Y1BAKMA1 Infineon Technologies Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea Description: CIPOS MICRO
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
1+733.56 грн
10+638.04 грн
25+608.32 грн
100+495.70 грн
В кошику  од. на суму  грн.
FS50R12W1T7B11BOMA1 FS50R12W1T7B11BOMA1 Infineon Technologies Infineon-FS50R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18717047301 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
1+3466.93 грн
24+2375.87 грн
В кошику  од. на суму  грн.
1ED44175N01BXTSA1 1ED44175N01BXTSA1 Infineon Technologies Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
5+72.24 грн
10+50.15 грн
25+45.29 грн
100+37.41 грн
250+35.00 грн
500+33.54 грн
1000+31.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE4929CXVAM18NAHAMA1 TLE4929CXVAM18NAHAMA1 Infineon Technologies Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53 Description: IC SPEED SENSOR SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+205.59 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BSC0923NDIATMA1 BSC0923NDIATMA1 Infineon Technologies Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6 Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 3949 шт:
термін постачання 21-31 дні (днів)
3+129.40 грн
10+79.12 грн
100+53.09 грн
500+39.35 грн
1000+35.98 грн
2000+33.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIGC81T60SNCX7SA1
SIGC81T60SNCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
товару немає в наявності
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SIDC14D60C8X1SA2 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
SIDC14D60C8X1SA2
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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REFICL5102HVU150WTOBO1 Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023
REFICL5102HVU150WTOBO1
Виробник: Infineon Technologies
Description: EVAL REF-ICL5102-U150W
Packaging: Box
Voltage - Output: 17V ~ 48V
Voltage - Input: 277 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: ICL5102HV
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16476.43 грн
В кошику  од. на суму  грн.
FS380R12A6T4BBPSA1 Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1
FS380R12A6T4BBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 380A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+46133.86 грн
В кошику  од. на суму  грн.
TLE92108232QXXUMA1 Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed
TLE92108232QXXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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FS950R08A6P2BBPSA1 Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4
FS950R08A6P2BBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 750V 950A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24911.54 грн
В кошику  од. на суму  грн.
TLS715B0TSNPBOARDTOBO1
TLS715B0TSNPBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL TLS715B0NAV50 LDO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 40V
Current - Output: 150mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS715B0NAV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2053.80 грн
В кошику  од. на суму  грн.
TLE9210823QXAPPKITTOBO1 TLE92108-23QX_APPKIT_Web.pdf
TLE9210823QXAPPKITTOBO1
Виробник: Infineon Technologies
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3985.34 грн
В кошику  од. на суму  грн.
EVALM5E1B1245NSICTOBO1 Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27
EVALM5E1B1245NSICTOBO1
Виробник: Infineon Technologies
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
товару немає в наявності
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TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
TLE92108231QXXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+139.78 грн
5000+132.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+115.69 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+109.56 грн
10+76.75 грн
25+69.63 грн
100+57.98 грн
250+54.47 грн
500+52.35 грн
1000+49.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.37 грн
10+171.70 грн
25+157.39 грн
100+132.99 грн
250+125.96 грн
500+121.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRAUDAMP23 Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4
IRAUDAMP23
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20234.72 грн
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+297.71 грн
5+256.56 грн
10+245.40 грн
25+217.96 грн
50+209.46 грн
100+201.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+326.29 грн
5+281.79 грн
10+269.79 грн
25+239.71 грн
50+230.54 грн
100+222.11 грн
В кошику  од. на суму  грн.
BSC0403NSATMA1 Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215
BSC0403NSATMA1
Виробник: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
XDPS21071XUMA1 Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14
XDPS21071XUMA1
Виробник: Infineon Technologies
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
товару немає в наявності
В кошику  од. на суму  грн.
REF_XDPS21071_45W1 Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668
REF_XDPS21071_45W1
Виробник: Infineon Technologies
Description: 45W USB-PD 3.0 TYPE C CHARGER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPAN70R360P7SAUMA1 Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3
Виробник: Infineon Technologies
Description: 700V, N-CH MOSFET, TO220 FULLPAK
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+650.20 грн
30+369.17 грн
120+314.06 грн
В кошику  од. на суму  грн.
IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 528 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.21 грн
50+52.46 грн
100+49.05 грн
500+36.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IMW65R048M1HXKSA1 Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466
IMW65R048M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 907 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+672.43 грн
30+381.30 грн
120+323.75 грн
510+294.82 грн
В кошику  од. на суму  грн.
IPS60R600PFD7SAKMA1 Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797
IPS60R600PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
IMW65R107M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+493.01 грн
30+270.07 грн
120+227.98 грн
В кошику  од. на суму  грн.
IPS60R1K0PFD7SAKMA1 Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c
IPS60R1K0PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R072M1HXKSA1 Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9
IMZA65R072M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+570.01 грн
30+316.04 грн
120+267.88 грн
В кошику  од. на суму  грн.
IMW65R027M1HXKSA1 Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463
IMW65R027M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 505 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+907.42 грн
30+530.22 грн
120+454.89 грн
В кошику  од. на суму  грн.
IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
на замовлення 592 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+724.82 грн
50+382.29 грн
100+364.19 грн
500+322.03 грн
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.13 грн
6000+11.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPS60R360PFD7SAKMA1 Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794
IPS60R360PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+24.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IMZA65R107M1HXKSA1 Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460
IMZA65R107M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+472.37 грн
30+258.86 грн
120+218.57 грн
В кошику  од. на суму  грн.
IPS60R210PFD7SAKMA1 Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791
IPS60R210PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
IMZA65R027M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 266 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1152.73 грн
30+684.12 грн
120+607.70 грн
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 12061 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.02 грн
10+46.10 грн
100+35.86 грн
500+31.11 грн
1000+27.48 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.54 грн
10+44.49 грн
100+37.54 грн
500+33.89 грн
1000+31.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 2876 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.82 грн
10+82.72 грн
100+57.66 грн
500+44.07 грн
1000+39.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 15079 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.02 грн
10+34.71 грн
100+23.65 грн
500+17.92 грн
1000+16.17 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FR900R12IP4DBPSA1 Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb
FR900R12IP4DBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+83826.27 грн
В кошику  од. на суму  грн.
IDK20G120C5XTMA1 Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47
IDK20G120C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
IDK20G120C5XTMA1 Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47
IDK20G120C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+636.70 грн
10+418.40 грн
100+308.54 грн
В кошику  од. на суму  грн.
F3L200R07W2S5FB11BOMA1 Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113
F3L200R07W2S5FB11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FS3L40R07W2H5FB11BOMA1 Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5
FS3L40R07W2H5FB11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FP10R12W1T7B3BOMA1 Infineon-FP10R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1856f6372d4
FP10R12W1T7B3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A (Typ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2874.68 грн
В кошику  од. на суму  грн.
DF150R12W1H3FB11BOMA1
DF150R12W1H3FB11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IM240S6Y1BAKMA1 Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea
IM240S6Y1BAKMA1
Виробник: Infineon Technologies
Description: CIPOS MICRO
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+733.56 грн
10+638.04 грн
25+608.32 грн
100+495.70 грн
В кошику  од. на суму  грн.
FS50R12W1T7B11BOMA1 Infineon-FS50R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18717047301
FS50R12W1T7B11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3466.93 грн
24+2375.87 грн
В кошику  од. на суму  грн.
1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.24 грн
10+50.15 грн
25+45.29 грн
100+37.41 грн
250+35.00 грн
500+33.54 грн
1000+31.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE4929CXVAM18NAHAMA1 Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53
TLE4929CXVAM18NAHAMA1
Виробник: Infineon Technologies
Description: IC SPEED SENSOR SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+205.59 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BSC0923NDIATMA1 Infineon-BSC0923NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136caa90c9e00b6
BSC0923NDIATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 3949 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.40 грн
10+79.12 грн
100+53.09 грн
500+39.35 грн
1000+35.98 грн
2000+33.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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