Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149687) > Сторінка 329 з 2495
| Фото | Назва | Виробник | Інформація |
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TC234LP32F200FACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 144TQFPPackaging: Cut Tape (CT) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-144-27 Part Status: Active Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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1ED44176N01FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 12.7V ~ 20V Input Type: CMOS, TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 50ns, 25ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.2V, 1.7V Current - Peak Output (Source, Sink): 800mA, 1.75A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4167 шт: термін постачання 21-31 дні (днів) |
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TC275T64F200WDCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Cut Tape (CT) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 40x12b, 6 x Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active Number of I/O: 112 DigiKey Programmable: Not Verified |
на замовлення 495 шт: термін постачання 21-31 дні (днів) |
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IRS2008MTRPBFAUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14MLPQPackaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: CMOS High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 14-MLPQ (4x4) Rise / Fall Time (Typ): 70ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRS2008MTRPBFAUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14MLPQPackaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: CMOS High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 14-MLPQ (4x4) Rise / Fall Time (Typ): 70ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| SIDC14D60E6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC08D60C8X1SA3 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIGC25T60SNCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 44ns/324ns Test Condition: 400V, 30A, 11Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC14D60C8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 50A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC04D60F6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 9A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIGC61T60NCX1SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC06D60E6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 10A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIGC81T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 95ns/200ns Test Condition: 300V, 100A, 2.2Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIDC14D60F6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIGC42T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 43ns/130ns Test Condition: 300V, 50A, 3.3Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC06D60F6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 15A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC14D60F6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC08D60C8X7SA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC14D60C8X7SA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 50A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIDC06D65C8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 650V 20A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A Current - Reverse Leakage @ Vr: 240 nA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIGC42T60SNCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC08D60C8X1SA2 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC06D60F6X7SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 15A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC06D60F6X1SA2 | Infineon Technologies |
Description: DIODE STANDARD 600V 15A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC06D60E6X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 10A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC14D60E6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 30A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIGC25T60UNX7SA1 | Infineon Technologies | Description: IGBT 3 CHIP 600V WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIGC61T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 65ns/170ns Test Condition: 300V, 75A, 3Ohm, 15V Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIDC14D60E6X1SA3 | Infineon Technologies |
Description: DIODE STANDARD 600V 30A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC06D60E6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 10A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC04D60F6X1SA2 | Infineon Technologies |
Description: DIODE STANDARD 600V 9A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC14D60C8X1SA3 | Infineon Technologies |
Description: DIODE GEN PURP 600V 50A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC14D60F6X1SA3 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIDC26D60C8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 100A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIDC08D60C8X1SA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC04D60F6X1SA4 | Infineon Technologies |
Description: DIODE STANDARD 600V 9A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIGC25T60NCX7SA1 | Infineon Technologies | Description: IGBT 3 CHIP 600V WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC14D60F6X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 45A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIGC81T60SNCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 65ns/450ns Test Condition: 400V, 100A, 3.3Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIDC14D60C8X1SA2 | Infineon Technologies |
Description: DIODE STANDARD 600V 50A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFICL5102HVU150WTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICL5102HVPackaging: Box Voltage - Output: 17V ~ 48V Voltage - Input: 277 ~ 528 VAC Current - Output / Channel: 3A Utilized IC / Part: ICL5102HV Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FS380R12A6T4BBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 380APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 870 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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TLE92108232QXXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 6V ~ 28V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 950 V Supplier Device Package: PG-VQFN-48-31 Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Current - Peak Output (Source, Sink): 100mA, 100mA Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FS950R08A6P2BBPSA1 | Infineon Technologies |
Description: IGBT MODULE 750V 950APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 950 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 870 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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TLS715B0TSNPBOARDTOBO1 | Infineon Technologies |
Description: EVAL TLS715B0NAV50 LDO Packaging: Box Voltage - Output: 5V Voltage - Input: 4V ~ 40V Current - Output: 150mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS715B0NAV50 Supplied Contents: Board(s) Channels per IC: 1 - Single |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TLE9210823QXAPPKITTOBO1 | Infineon Technologies |
Description: EVAL MOSFET DRVR TLE92018 MOTIXPackaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: TLE9210823 Supplied Contents: Board(s) Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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EVALM5E1B1245NSICTOBO1 | Infineon Technologies |
Description: EVAL COOLSIC MOSFET MOTOR DRIVERPackaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDI20H12AH Supplied Contents: Board(s) Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE92108231QXXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 6V ~ 28V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 950 V Supplier Device Package: PG-VQFN-48-31 Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 100mA, 100mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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ICL5102HVXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 19DSOPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-19-1 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLD22522EPXUMA1 | Infineon Technologies |
Description: IC LED DRVR CTRLR PWM 14TSDSOPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 120mA Internal Switch(s): No Topology: Switched Capacitor (Charge Pump) Supplier Device Package: PG-TSDSO-14 Dimming: PWM Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLD22522EPXUMA1 | Infineon Technologies |
Description: IC LED DRVR CTRLR PWM 14TSDSOPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 120mA Internal Switch(s): No Topology: Switched Capacitor (Charge Pump) Supplier Device Package: PG-TSDSO-14 Dimming: PWM Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Grade: Automotive |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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ICL5102HVXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 19DSOPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-19-1 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Active |
на замовлення 3950 шт: термін постачання 21-31 дні (днів) |
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IRAUDAMP23 | Infineon Technologies |
Description: EVAL BOARD FOR IRS2452AMPackaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: ±80V ~ 160V Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm Board Type: Fully Populated Utilized IC / Part: IRS2452AM Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLE5014SP16E0002XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE5014SP16E0001XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE5014SP16E0001XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active |
на замовлення 138 шт: термін постачання 21-31 дні (днів) |
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TLE5014SP16E0002XUMA1 | Infineon Technologies |
Description: GMR-BASED ANGLE SENSORPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Wheatstone Bridge Operating Temperature: -40°C ~ 125°C (TA) Termination Style: Gull Wing Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-1 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 169 шт: термін постачання 21-31 дні (днів) |
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BSC0403NSATMA1 | Infineon Technologies |
Description: 150V, N-CH MOSFET, LOGIC LEVEL,Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10 Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 91µA Supplier Device Package: PG-TDSON-8-7 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XDPS21071XUMA1 | Infineon Technologies |
Description: DIGITAL FFR CONTROLLER, DSO12Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 24.9kHz ~ 139.4kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-DSO-12-20 Synchronous Rectifier: No Control Features: Current Limit, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REF_XDPS21071_45W1 | Infineon Technologies |
Description: 45W USB-PD 3.0 TYPE C CHARGER |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| TC234LP32F200FACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1204.47 грн |
| 10+ | 921.16 грн |
| 25+ | 861.48 грн |
| 100+ | 746.89 грн |
| 250+ | 717.55 грн |
| 1ED44176N01FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: CMOS, TTL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Current - Peak Output (Source, Sink): 800mA, 1.75A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: CMOS, TTL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Current - Peak Output (Source, Sink): 800mA, 1.75A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 82.22 грн |
| 10+ | 57.16 грн |
| 25+ | 51.65 грн |
| 100+ | 42.77 грн |
| 250+ | 40.05 грн |
| 500+ | 38.41 грн |
| 1000+ | 36.46 грн |
| TC275T64F200WDCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2184.49 грн |
| 10+ | 1698.23 грн |
| 25+ | 1597.02 грн |
| 100+ | 1394.35 грн |
| 250+ | 1344.58 грн |
| IRS2008MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS2008MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SIDC14D60E6X7SA1 |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC08D60C8X1SA3 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIGC25T60SNCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/324ns
Test Condition: 400V, 30A, 11Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/324ns
Test Condition: 400V, 30A, 11Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
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| SIDC14D60C8X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC04D60F6X7SA1 |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIGC61T60NCX1SA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Description: IGBT 3 CHIP 600V WAFER
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| SIDC06D60E6X7SA1 |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIGC81T60NCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 95ns/200ns
Test Condition: 300V, 100A, 2.2Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 95ns/200ns
Test Condition: 300V, 100A, 2.2Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
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| SIDC14D60F6X7SA1 |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIGC42T60NCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/130ns
Test Condition: 300V, 50A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/130ns
Test Condition: 300V, 50A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
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| SIDC06D60F6X1SA4 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC14D60F6X1SA4 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC08D60C8X7SA1 |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC14D60C8X7SA1 |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC06D65C8X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
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| SIGC42T60SNCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
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| SIDC08D60C8X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC06D60F6X7SA1 |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC06D60F6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC06D60E6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC14D60E6X1SA4 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIGC25T60UNX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Description: IGBT 3 CHIP 600V WAFER
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| SIGC61T60NCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 300V, 75A, 3Ohm, 15V
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 300V, 75A, 3Ohm, 15V
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
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| SIDC14D60E6X1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC06D60E6X1SA4 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC04D60F6X1SA2 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC14D60C8X1SA3 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC14D60F6X1SA3 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC26D60C8X1SA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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| SIDC08D60C8X1SA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIDC04D60F6X1SA4 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIGC25T60NCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Description: IGBT 3 CHIP 600V WAFER
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| SIDC14D60F6X1SA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| SIGC81T60SNCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
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| SIDC14D60C8X1SA2 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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| REFICL5102HVU150WTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICL5102HV
Packaging: Box
Voltage - Output: 17V ~ 48V
Voltage - Input: 277 ~ 528 VAC
Current - Output / Channel: 3A
Utilized IC / Part: ICL5102HV
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR ICL5102HV
Packaging: Box
Voltage - Output: 17V ~ 48V
Voltage - Input: 277 ~ 528 VAC
Current - Output / Channel: 3A
Utilized IC / Part: ICL5102HV
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
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| FS380R12A6T4BBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 380A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Description: IGBT MODULE 1200V 380A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 47776.87 грн |
| TLE92108232QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
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| FS950R08A6P2BBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 750V 950A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Description: IGBT MODULE 750V 950A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 25798.74 грн |
| TLS715B0TSNPBOARDTOBO1 |
Виробник: Infineon Technologies
Description: EVAL TLS715B0NAV50 LDO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 40V
Current - Output: 150mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS715B0NAV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Description: EVAL TLS715B0NAV50 LDO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 40V
Current - Output: 150mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS715B0NAV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2126.94 грн |
| TLE9210823QXAPPKITTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4127.27 грн |
| EVALM5E1B1245NSICTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
Contents: Board(s)
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
Contents: Board(s)
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| TLE92108231QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 144.76 грн |
| 5000+ | 136.73 грн |
| ICL5102HVXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 119.81 грн |
| TLD22522EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
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| TLD22522EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.46 грн |
| 10+ | 79.49 грн |
| 25+ | 72.11 грн |
| 100+ | 60.05 грн |
| 250+ | 56.41 грн |
| 500+ | 54.22 грн |
| 1000+ | 51.55 грн |
| ICL5102HVXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.83 грн |
| 10+ | 177.82 грн |
| 25+ | 163.00 грн |
| 100+ | 137.72 грн |
| 250+ | 130.44 грн |
| 500+ | 126.06 грн |
| IRAUDAMP23 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 20955.36 грн |
| TLE5014SP16E0002XUMA1 |
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Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE5014SP16E0001XUMA1 |
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Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TLE5014SP16E0001XUMA1 |
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Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
на замовлення 138 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 308.31 грн |
| 5+ | 265.70 грн |
| 10+ | 254.14 грн |
| 25+ | 225.72 грн |
| 50+ | 216.92 грн |
| 100+ | 208.91 грн |
| TLE5014SP16E0002XUMA1 |
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Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 329.69 грн |
| 5+ | 284.70 грн |
| 10+ | 272.59 грн |
| 25+ | 242.22 грн |
| 50+ | 232.93 грн |
| 100+ | 224.41 грн |
| BSC0403NSATMA1 |
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Виробник: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
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В кошику
од. на суму грн.
| XDPS21071XUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
товару немає в наявності
В кошику
од. на суму грн.
| REF_XDPS21071_45W1 |
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Виробник: Infineon Technologies
Description: 45W USB-PD 3.0 TYPE C CHARGER
Description: 45W USB-PD 3.0 TYPE C CHARGER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.

















