Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123023) > Сторінка 376 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| IR3570AMGB12TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3570AMGB13TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3570AMGB14TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3570AMGB15TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3570AMGB16TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3570AMGB20TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3570AMIE03TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR3570AMIE04TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFNSupplier Device Package: PG-VQFN-40-901 Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 2 Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IR3570AMIE07TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3570AMIS03TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR3570AMQA01TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFNPart Status: Obsolete Supplier Device Package: PG-VQFN-40-901 Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 2 Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3570AMQA02TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFNApplications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 2 Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Supplier Device Package: PG-VQFN-40-901 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3570AMQA04TRP | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 40VQFNMounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Supplier Device Package: PG-VQFN-40-901 Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF8113TRPBF-1 | Infineon Technologies |
Description: MOSFET N-CH 30V 17.2A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS133E3045ANTMA1 | Infineon Technologies |
Description: AUTOMOTIVE SMART LOW-SIDE SWITCHPart Status: Active Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Supplier Device Package: PG-TO220-3-5 Ratio - Input:Output: 1:1 Current - Output (Max): 7A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 60V Input Type: Non-Inverting Rds On (Typ): 40mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Features: Slew Rate Controlled Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKQ75N120CT2 | Infineon Technologies |
Description: IKQ75N120 - DISCRETE IGBT WITH APackaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICE3BS03LJG | Infineon Technologies |
Description: ICE3BS03 - PWM-FF (FIXED FREQUEN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKW15N120H3 | Infineon Technologies |
Description: IKW15N120 - DISCRETE IGBT WITH A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAR63-06E6327HTSA1 | Infineon Technologies |
Description: BAR63 - PIN DIODEPower Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SOT23-3-3 Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 1Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - 1 Pair Common Anode Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAR63-03WE6327 | Infineon Technologies |
Description: BAR63 - PIN DIODEPower Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SOD323-2 Voltage - Peak Reverse (Max): 50V Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - Single Package / Case: SC-76, SOD-323 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 5176 шт В кошику од. на суму грн. | ||||||||||||||
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BAR63-04E6327 | Infineon Technologies |
Description: BAR63 - PIN DIODEPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAR63-05E6327 | Infineon Technologies |
Description: BAR63 - PIN DIODEPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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IPP65R280C6 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 6Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI65R280C6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IPI65R280C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO262-3Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IPB65R280E6 | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPW65R280C6 | Infineon Technologies |
Description: 650 V COOLMOS E6 POWER MOSFETPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 466 шт: термін постачання 21-31 дні (днів) |
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IPW65R280E6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO247-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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IPW65R280E6 | Infineon Technologies |
Description: 650 V COOLMOS E6 POWER MOSFETPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP048N04NG | Infineon Technologies |
Description: IPP048N04 - 12V-300V N-CHANNEL P |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IFX1117MEVHTMA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 1A SOT223-4Voltage - Output (Max): 13.6V Supplier Device Package: PG-SOT223-4-21 Number of Regulators: 1 Voltage - Input (Max): 15V Current - Quiescent (Iq): 5 mA Output Configuration: Positive Operating Temperature: 0°C ~ 125°C Current - Output: 1A Mounting Type: Surface Mount Output Type: Adjustable Package / Case: TO-261-4, TO-261AA Packaging: Bulk Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 1.4V @ 1A PSRR: 70dB (120Hz) Voltage - Output (Min/Fixed): 1.25V |
на замовлення 7981 шт: термін постачання 21-31 дні (днів) |
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BCR129E6327 | Infineon Technologies |
Description: BCR129 - DIGITAL TRANSISTORResistor - Base (R1): 10 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23-3-11 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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IPW65R095C7 | Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-TO247 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD90N04S3-04 | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFETVgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-11 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPB0401NM5SATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
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TLE6251DSXT | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 DSO-8Part Status: Active Duplex: Full Receiver Hysteresis: 200 mV Supplier Device Package: PG-DSO-8-16 Protocol: CANbus Data Rate: 1MBd Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 150°C (TJ) Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE6251DXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 PGDSO816Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Full Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE6251DXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 PGDSO816Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Full Part Status: Active |
на замовлення 3330 шт: термін постачання 21-31 дні (днів) |
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TLE6251DS | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 DSO-8Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Full Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFILD8150DC15ATOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ILD8150Features: Dimmable Packaging: Box Voltage - Input: 8V ~ 80V Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: ILD8150 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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BSC430N25NSFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V TSON-8Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TSON-8-3 Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 250 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC430N25NSFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V TSON-8Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TSON-8-3 Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
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| SFH756 | Infineon Technologies |
Description: XMITTER FIBER OPTIC 660NMCurrent - DC Forward (If) (Max): 50 mA Voltage - DC Reverse (Vr) (Max): 3 V Capacitance: 30 pF Spectral Bandwidth: 25nm Voltage - Forward (Vf) (Typ): 2.1V Wavelength: 660nm Packaging: Bulk |
на замовлення 3691 шт: термін постачання 21-31 дні (днів) |
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CY7C1460SV25-250BZC | Infineon Technologies | Description: IC SRAM 36MBIT PARALLEL 165FBGA |
на замовлення 675 шт: термін постачання 21-31 дні (днів) |
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TLE4906L | Infineon Technologies |
Description: TLE4906 - HALL SWITCHPart Status: Active Test Condition: 25°C Supplier Device Package: PG-SSO-3-2 Current - Supply (Max): 6mA Current - Output (Max): 20mA Sensing Range: 13.5mT Trip, 5mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 18V Operating Temperature: -40°C ~ 150°C (TJ) Function: Unipolar Switch Mounting Type: Through Hole Polarization: South Pole Output Type: Open Collector Package / Case: 3-SSIP, SSO-3-02 Features: Temperature Compensated Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUZ40N06S5N050ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 40A TSDSON-8-33Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUZ40N06S5N050ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 40A TSDSON-8-33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 8254 шт: термін постачання 21-31 дні (днів) |
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IPP040N06N3G | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 9Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGW15T120 | Infineon Technologies |
Description: IGW15T120 - DISCRETE IGBT WITHOUPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: PG-TO247-3-21 Td (on/off) @ 25°C: 50ns/520ns Switching Energy: 1.3mJ (on), 1.4mJ (off) Test Condition: 600V, 15A, 56Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 110 W |
на замовлення 7690 шт: термін постачання 21-31 дні (днів) |
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BTS442E2 | Infineon Technologies |
Description: BTS442 - PROFET - SMART HIGH SIDFeatures: Auto Restart, Status Flag Packaging: Bulk Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 15mOhm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 21A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-5-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKW75N60TXK | Infineon Technologies |
Description: IKW75N60 - DISCRETE IGBT WITH ANPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IKW75N60H3 | Infineon Technologies |
Description: IKW75N60 - DISCRETE IGBT WITH ANPower - Max: 428 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Part Status: Active Gate Charge: 470 nC Test Condition: 400V, 75A, 5.2Ohm, 15V Switching Energy: 3mJ (on), 1.7mJ (off) Td (on/off) @ 25°C: 31ns/265ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3-41 Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Reverse Recovery Time (trr): 190 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IKW75N60TA | Infineon Technologies |
Description: IKW75N60 - AUTOMOTIVE IGBT DISCRPower - Max: 428 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Part Status: Active Gate Charge: 470 nC Test Condition: 400V, 75A, 5Ohm, 15V Switching Energy: 2mJ (on), 2.5mJ (off) Td (on/off) @ 25°C: 33ns/330ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3-41 Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Reverse Recovery Time (trr): 121 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4104Q48K128AB | Infineon Technologies |
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4Core Processor: ARM® Cortex®-M4 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 20K x 8 Program Memory Size: 128KB (128K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Bulk Number of I/O: 30 Part Status: Active Supplier Device Package: 48-VQFN (7x7) Peripherals: DMA, I²S, LED, POR, PWM, WDT Connectivity: I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Core Size: 32-Bit Data Converters: A/D 9x12b SAR; D/A 2x12b |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4100Q48K128BAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 128KB (128K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 9x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-53 Part Status: Active Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 1727 шт: термін постачання 21-31 дні (днів) |
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XMC4108F64K64ABXQMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFPDigiKey Programmable: Not Verified Number of I/O: 35 Supplier Device Package: PG-LQFP-64-19 Peripherals: DMA, I2S, LED, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Core Size: 32-Bit Data Converters: A/D 10x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 20K x 8 Program Memory Size: 64KB (64K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||||
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IGW50N60H3 | Infineon Technologies |
Description: IGW50N60 - DISCRETE IGBT WITHOUT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKW50N60H3 | Infineon Technologies |
Description: IKW50N60 - DISCRETE IGBT WITH AN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KITXMCDPEXP01TOBO1 | Infineon Technologies |
Description: XMC DIGITAL POWER EXPLORER KITPart Status: Active Platform: XMC Digital Power Explorer Utilized IC / Part: XMC1300, XMC4200 Board Type: Evaluation Platform Core Processor: ARM® Cortex®-M0, Cortex®-M4F Contents: Board(s) Type: MCU 32-Bit Mounting Type: Fixed Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DEMO850W12VDC230VACTOBO1 | Infineon Technologies |
Description: DEV KITPart Status: Active Utilized IC / Part: XMC1300 Board Type: Single Board Computers (SBC) Core Processor: ARM® Cortex®-M0 Contents: Board(s) Type: MCU Mounting Type: Fixed Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| IR3570AMGB12TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMGB13TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMGB14TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMGB15TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMGB16TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMGB20TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMIE03TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMIE04TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMIE07TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMIS03TRP |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Description: IC REG CTRLR INTEL 2OUT 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMQA01TRP |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Part Status: Obsolete
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Part Status: Obsolete
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IR3570AMQA02TRP |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
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В кошику
од. на суму грн.
| IR3570AMQA04TRP |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
Description: IC REG CTRLR INTEL 2OUT 40VQFN
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-VQFN-40-901
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 2
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В кошику
од. на суму грн.
| IRF8113TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 17.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BTS133E3045ANTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE SMART LOW-SIDE SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO220-3-5
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Features: Slew Rate Controlled
Packaging: Bulk
Description: AUTOMOTIVE SMART LOW-SIDE SWITCH
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO220-3-5
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Features: Slew Rate Controlled
Packaging: Bulk
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В кошику
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| ICE3BS03LJG |
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Виробник: Infineon Technologies
Description: ICE3BS03 - PWM-FF (FIXED FREQUEN
Description: ICE3BS03 - PWM-FF (FIXED FREQUEN
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В кошику
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| IKW15N120H3 |
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Виробник: Infineon Technologies
Description: IKW15N120 - DISCRETE IGBT WITH A
Description: IKW15N120 - DISCRETE IGBT WITH A
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В кошику
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| BAR63-06E6327HTSA1 |
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Виробник: Infineon Technologies
Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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| BAR63-03WE6327 |
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Виробник: Infineon Technologies
Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Bulk
Description: BAR63 - PIN DIODE
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 50V
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 5176 шт
В кошику
од. на суму грн.
| BAR63-04E6327 |
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Виробник: Infineon Technologies
Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| BAR63-05E6327 |
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Виробник: Infineon Technologies
Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: BAR63 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2874+ | 7.75 грн |
| IPP65R280C6 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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| IPI65R280C6 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 260+ | 82.79 грн |
| IPI65R280C6XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 176+ | 113.00 грн |
| IPB65R280E6 |
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Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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| IPW65R280C6 |
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Виробник: Infineon Technologies
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 194+ | 110.62 грн |
| IPW65R280E6FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 170+ | 117.80 грн |
| IPW65R280E6 |
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Виробник: Infineon Technologies
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: 650 V COOLMOS E6 POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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| IPP048N04NG |
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Виробник: Infineon Technologies
Description: IPP048N04 - 12V-300V N-CHANNEL P
Description: IPP048N04 - 12V-300V N-CHANNEL P
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| IFX1117MEVHTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4-21
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
Description: IC REG LIN POS ADJ 1A SOT223-4
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4-21
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
на замовлення 7981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 961+ | 22.90 грн |
| BCR129E6327 |
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Виробник: Infineon Technologies
Description: BCR129 - DIGITAL TRANSISTOR
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: BCR129 - DIGITAL TRANSISTOR
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Мінімальне замовлення: 6000 шт
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| IPW65R095C7 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
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| IPD90N04S3-04 |
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Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
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| IPB0401NM5SATMA1 |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| TLE6251DSXT |
![]() |
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Active
Duplex: Full
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Part Status: Active
Duplex: Full
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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| TLE6251DXUMA2 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 53.65 грн |
| TLE6251DXUMA2 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
на замовлення 3330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.71 грн |
| 10+ | 75.89 грн |
| 25+ | 68.95 грн |
| 100+ | 57.49 грн |
| 250+ | 54.06 грн |
| 500+ | 51.99 грн |
| 1000+ | 50.73 грн |
| TLE6251DS |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Active
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| REFILD8150DC15ATOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Box
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Box
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5718.82 грн |
| BSC430N25NSFDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 250 V
Description: MOSFET N-CH 250V TSON-8
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 250 V
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| BSC430N25NSFDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 82 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 354.91 грн |
| 10+ | 227.74 грн |
| SFH756 |
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Виробник: Infineon Technologies
Description: XMITTER FIBER OPTIC 660NM
Current - DC Forward (If) (Max): 50 mA
Voltage - DC Reverse (Vr) (Max): 3 V
Capacitance: 30 pF
Spectral Bandwidth: 25nm
Voltage - Forward (Vf) (Typ): 2.1V
Wavelength: 660nm
Packaging: Bulk
Description: XMITTER FIBER OPTIC 660NM
Current - DC Forward (If) (Max): 50 mA
Voltage - DC Reverse (Vr) (Max): 3 V
Capacitance: 30 pF
Spectral Bandwidth: 25nm
Voltage - Forward (Vf) (Typ): 2.1V
Wavelength: 660nm
Packaging: Bulk
на замовлення 3691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 238.94 грн |
| CY7C1460SV25-250BZC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Description: IC SRAM 36MBIT PARALLEL 165FBGA
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 3749.65 грн |
| TLE4906L |
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Виробник: Infineon Technologies
Description: TLE4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.5mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Description: TLE4906 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.5mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Unipolar Switch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
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| IAUZ40N06S5N050ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 30.80 грн |
| IAUZ40N06S5N050ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 40A TSDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Qualification: AEC-Q101
на замовлення 8254 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.89 грн |
| 10+ | 73.65 грн |
| 100+ | 49.31 грн |
| 500+ | 36.49 грн |
| 1000+ | 33.35 грн |
| 2000+ | 30.80 грн |
| IPP040N06N3G |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
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| IGW15T120 |
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Виробник: Infineon Technologies
Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Description: IGW15T120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
на замовлення 7690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 136+ | 156.84 грн |
| BTS442E2 |
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Виробник: Infineon Technologies
Description: BTS442 - PROFET - SMART HIGH SID
Features: Auto Restart, Status Flag
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: BTS442 - PROFET - SMART HIGH SID
Features: Auto Restart, Status Flag
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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| IKW75N60TXK |
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Виробник: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Part Status: Active
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| IKW75N60H3 |
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Виробник: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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| IKW75N60TA |
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Виробник: Infineon Technologies
Description: IKW75N60 - AUTOMOTIVE IGBT DISCR
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5Ohm, 15V
Switching Energy: 2mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 33ns/330ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Reverse Recovery Time (trr): 121 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: IKW75N60 - AUTOMOTIVE IGBT DISCR
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5Ohm, 15V
Switching Energy: 2mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 33ns/330ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Reverse Recovery Time (trr): 121 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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| XMC4104Q48K128AB |
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Виробник: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
Number of I/O: 30
Part Status: Active
Supplier Device Package: 48-VQFN (7x7)
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 9x12b SAR; D/A 2x12b
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
Number of I/O: 30
Part Status: Active
Supplier Device Package: 48-VQFN (7x7)
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 9x12b SAR; D/A 2x12b
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| XMC4100Q48K128BAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 1727 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.44 грн |
| 10+ | 380.86 грн |
| 25+ | 352.99 грн |
| 100+ | 302.53 грн |
| 250+ | 288.82 грн |
| 500+ | 280.56 грн |
| 1000+ | 269.28 грн |
| XMC4108F64K64ABXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 35
Supplier Device Package: PG-LQFP-64-19
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 10x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 35
Supplier Device Package: PG-LQFP-64-19
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit
Data Converters: A/D 10x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику
од. на суму грн.
| IGW50N60H3 |
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Виробник: Infineon Technologies
Description: IGW50N60 - DISCRETE IGBT WITHOUT
Description: IGW50N60 - DISCRETE IGBT WITHOUT
товару немає в наявності
В кошику
од. на суму грн.
| IKW50N60H3 |
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Виробник: Infineon Technologies
Description: IKW50N60 - DISCRETE IGBT WITH AN
Description: IKW50N60 - DISCRETE IGBT WITH AN
товару немає в наявності
В кошику
од. на суму грн.
| KITXMCDPEXP01TOBO1 |
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Виробник: Infineon Technologies
Description: XMC DIGITAL POWER EXPLORER KIT
Part Status: Active
Platform: XMC Digital Power Explorer
Utilized IC / Part: XMC1300, XMC4200
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0, Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Description: XMC DIGITAL POWER EXPLORER KIT
Part Status: Active
Platform: XMC Digital Power Explorer
Utilized IC / Part: XMC1300, XMC4200
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0, Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9366.31 грн |
| DEMO850W12VDC230VACTOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Part Status: Active
Utilized IC / Part: XMC1300
Board Type: Single Board Computers (SBC)
Core Processor: ARM® Cortex®-M0
Contents: Board(s)
Type: MCU
Mounting Type: Fixed
Packaging: Bulk
Description: DEV KIT
Part Status: Active
Utilized IC / Part: XMC1300
Board Type: Single Board Computers (SBC)
Core Processor: ARM® Cortex®-M0
Contents: Board(s)
Type: MCU
Mounting Type: Fixed
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21841.55 грн |


































