Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149791) > Сторінка 373 з 2497
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||
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|   | IRF3709ZSTRRPBF | Infineon Technologies |  Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IRF3709ZSTRRPBF | Infineon Technologies |  Description: MOSFET N-CH 30V 87A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BB837E6327HTSA1 | Infineon Technologies |  Description: DIODE VAR CAP 30V 20MA SOD-323 Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C25 Supplier Device Package: PG-SOD323-3D Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 12.0 | на замовлення 66085 шт:термін постачання 21-31 дні (днів) | 
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|   | BAS3005A-02VE6327 | Infineon Technologies |  Description: DIODE SCHOTT 30V 500MA SC79-2-1 Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 10pF @ 5V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: PG-SC79-2-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 300 µA @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BAS3005A-02VH6327 | Infineon Technologies |  Description: DIODE SCHOTT 30V 500MA SC79-2-1 Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 10pF @ 5V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: PG-SC79-2-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 300 µA @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IPP80N04S304AKSA1 | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V | на замовлення 452 шт:термін постачання 21-31 дні (днів) | 
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|   | IPP80N04S3-03 | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V | на замовлення 345 шт:термін постачання 21-31 дні (днів) | 
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| IPP80N04S2-H4 | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | CY8C4127AXI-S443 | Infineon Technologies |  Description: IC MCU 32BIT 128KB FLASH 44TQFP Packaging: Tray Package / Case: 44-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 37 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IRLR7843TRLPBF | Infineon Technologies |  Description: MOSFET N-CH 30V 161A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IRLR7843TRLPBF | Infineon Technologies |  Description: MOSFET N-CH 30V 161A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BAT5405WH6327XTSA1 | Infineon Technologies |  Description: DIODE ARR SCHOT 30V 200MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 105895 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE4263GXUMA1 | Infineon Technologies |  Description: IC REG LINEAR 5V 200MA PG-DSO-20 Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1.3 mA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-20 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit, Reset, Watchdog Part Status: Active PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 23 mA Grade: Automotive Qualification: AEC-Q100 | на замовлення 14000 шт:термін постачання 21-31 дні (днів) | 
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| TLE4263GSNTMA1 | Infineon Technologies |  Description: IC REG LINEAR LDO 5V 0.2A 8DSOP Packaging: Tape & Reel (TR) Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | IRG4IBC10UDPBF | Infineon Technologies |  Description: IGBT 600V 6.8A TO220AB FP Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Supplier Device Package: TO-220AB Full-Pak Td (on/off) @ 25°C: 40ns/87ns Switching Energy: 140µJ (on), 120µJ (off) Test Condition: 480V, 5A, 100Ohm, 15V Gate Charge: 15 nC Part Status: Obsolete Current - Collector (Ic) (Max): 6.8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 27 A Power - Max: 25 W | на замовлення 2157 шт:термін постачання 21-31 дні (днів) | 
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| SLF9630ID1XFSA2 | Infineon Technologies | Description: TRANSPORT TICKETING | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | BAS4007WH6327XTSA1 | Infineon Technologies |  Description: DIODE ARR SCHOTT 40V SOT343-4-3 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT343-4-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V | на замовлення 12242 шт:термін постачання 21-31 дні (днів) | 
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| BF517E6327 | Infineon Technologies |  Description: RF 0.025, NPN Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB Power - Max: 280mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Supplier Device Package: PG-SOT23-3-3 Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | CY7C1460AV33-167BZC | Infineon Technologies |  Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 36 DigiKey Programmable: Not Verified | на замовлення 344 шт:термін постачання 21-31 дні (днів) | 
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|   | IPP114N03LGHKSA1 | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V | на замовлення 12496 шт:термін постачання 21-31 дні (днів) | 
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| IPP114N03LG | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V | на замовлення 12946 шт:термін постачання 21-31 дні (днів) | 
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| TLE4473GV52AUMA1 | Infineon Technologies |  Description: IC REG LINEAR FIXED LDO REG Packaging: Bulk Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA, 180mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 165 µA Voltage - Input (Max): 42V Number of Regulators: 2 Supplier Device Package: PG-DSO-12-11 Voltage - Output (Min/Fixed): 2.6V, 5V Control Features: Inhibit, Reset, Watchdog Part Status: Active PSRR: 65dB (100Hz), 65dB (100Hz) Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage Current - Supply (Max): 20 mA Grade: Automotive Qualification: AEC-Q100 | на замовлення 14000 шт:термін постачання 21-31 дні (днів) | 
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| TLE7469G V52 | Infineon Technologies |  Description: IC REG LINEAR FIXED LDO REG | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | CY7C1315JV18-300BZC | Infineon Technologies |  Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 512K x 36 DigiKey Programmable: Not Verified | на замовлення 3463 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE4207GXUMA1 | Infineon Technologies |  Description: IC MOTOR DRIVER 5V-18V 14DSO Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 5V ~ 18V Applications: General Purpose Voltage - Load: 5V ~ 18V Supplier Device Package: P-DSO-14-8 Motor Type - AC, DC: Brushed DC | на замовлення 69341 шт:термін постачання 21-31 дні (днів) | 
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| DD1200S33KL2C_B5 | Infineon Technologies |  Description: RECTIFIER DIODE MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C NTC Thermistor: No Supplier Device Package: A-IHV130-6 Part Status: Active Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 1800 W | на замовлення 17 шт:термін постачання 21-31 дні (днів) | 
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|   | DD1200S12H4 | Infineon Technologies |  Description: DIODE MOD GP 1200V AGIHMB130-2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Supplier Device Package: AG-IHMB130-2 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 1200 A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | DD1200S33K2CB3S2NDSA1 | Infineon Technologies |  Description: DIODE MOD GP 3300V 1200A AIHV130 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1200A (DC) Supplier Device Package: A-IHV130-3 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A Current - Reverse Leakage @ Vr: 1700 A @ 1800 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | DD1200S33K2CB3NOSA1 | Infineon Technologies |  Description: DIODE MOD GP 3300V 1200A AIHV130 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1200A (DC) Supplier Device Package: A-IHV130-3 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A Current - Reverse Leakage @ Vr: 1700 A @ 1800 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IKW40N65ET7XKSA1 | Infineon Technologies |  Description: IGBT TRENCH FS 650V 76A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 85 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/310ns Switching Energy: 1.05mJ (on), 590µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 235 nC Part Status: Active Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 230.8 W Grade: Automotive Qualification: AEC-Q101 | на замовлення 71 шт:термін постачання 21-31 дні (днів) | 
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|   | SAK-XC2267-72F66LAC | Infineon Technologies | Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x8/10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-3 Part Status: Active Number of I/O: 75 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| BSM50GD120DLCBOSA1 | Infineon Technologies | Description: IGBT MOD 1200V 85A 350W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | KTY23-5 | Infineon Technologies |  Description: CURRENT OUTPUT TEMP SENSOR | на замовлення 146619 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
|   | KTY21-7 | Infineon Technologies |  Description: SENSOR PTC 1.015KOHM 3% TO92MINI Packaging: Bulk Package / Case: TO-226-2, TO-92-2 (TO-226AC) Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C Resistance Tolerance: ±3% Supplier Device Package: TO-92MINI Resistance @ 25°C: 1.015 kOhms | на замовлення 127864 шт:термін постачання 21-31 дні (днів) | 
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|   | KTY21-5 | Infineon Technologies |  Description: THERMISTOR PTC 985 OHM 3% TO92 Packaging: Bulk Package / Case: TO-226-2, TO-92-2 (TO-226AC) Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C Resistance Tolerance: ±3% Supplier Device Package: TO-92MINI Resistance @ 25°C: 985 Ohms | на замовлення 84680 шт:термін постачання 21-31 дні (днів) | 
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|   | CY7C1568KV18-550BZXC | Infineon Technologies |  Description: IC SRAM 72MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified | на замовлення 219 шт:термін постачання 21-31 дні (днів) | 
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|   | CY62157DV30LL-55BVXI | Infineon Technologies |  Description: IC SRAM 8MBIT PARALLEL 48VFBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified | на замовлення 719 шт:термін постачання 21-31 дні (днів) | 
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|   | IR2118STRPBF | Infineon Technologies |  Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Active DigiKey Programmable: Not Verified | на замовлення 1454 шт:термін постачання 21-31 дні (днів) | 
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|   | S29GL01GT12TFN010 | Infineon Technologies |  Description: IC FLASH 1GBIT PARALLEL 56TSOP Packaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 120 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | на замовлення 14 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE9180D31QKXUMA1 | Infineon Technologies |  Description: IC GATE DRVR HALF-BRIDGE 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 60V Input Type: Non-Inverting Supplier Device Package: PG-LQFP-64-27 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1A, 1A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 | на замовлення 5700 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE9180D31QKXUMA1 | Infineon Technologies |  Description: IC GATE DRVR HALF-BRIDGE 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 60V Input Type: Non-Inverting Supplier Device Package: PG-LQFP-64-27 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1A, 1A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 | на замовлення 7008 шт:термін постачання 21-31 дні (днів) | 
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| BSF134N10NJ3 G | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: MG-WDSON-2-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V | на замовлення 4635 шт:термін постачання 21-31 дні (днів) | 
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|   | STT800N18P55XPSA1 | Infineon Technologies |  Description: THYR / DIODE MODULE DK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 60Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.8 kV | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IMC301AF064XUMA1 | Infineon Technologies |  Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT Supplier Device Package: 64-QFP (10x10) Part Status: Active Number of I/O: 41 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IMC302AF064XUMA1 | Infineon Technologies |  Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Supplier Device Package: 64-QFP (10x10) Number of I/O: 41 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| PEB4265V V1.1 | Infineon Technologies |  Description: DUSLIC DUAL CHANNEL SLIC Packaging: Bulk | на замовлення 1745 шт:термін постачання 21-31 дні (днів) | 
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| PEB4265VV1.1 | Infineon Technologies |  Description: DUSLIC DUAL CHANNEL SLIC Packaging: Bulk | на замовлення 588 шт:термін постачання 21-31 дні (днів) | 
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| PEB4265VV1.2 | Infineon Technologies |  Description: DUSLIC DUAL CHANNEL SUBSCRIBER L Packaging: Bulk | на замовлення 2450 шт:термін постачання 21-31 дні (днів) | 
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|   | XMC1402T038X0128AAXUMA1 | Infineon Technologies |  Description: IC MCU 32BIT 128KB FLASH 38TSSOP Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | XMC1402T038X0128AAXUMA1 | Infineon Technologies |  Description: IC MCU 32BIT 128KB FLASH 38TSSOP Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified | на замовлення 2799 шт:термін постачання 21-31 дні (днів) | 
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|   | BSL214NL6327 | Infineon Technologies |  Description: SMALL SIGNAL N-CHANNEL MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSL215PL6327 | Infineon Technologies |  Description: P-CHANNEL MOSFET Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 11µA Supplier Device Package: PG-TSOP6-6 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSL205NL6327 | Infineon Technologies |  Description: SMALL SIGNAL N-CHANNEL MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSL207NL6327 | Infineon Technologies |  Description: MOSFET 2N-CH 20V 2.1A TSOP6-6 Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 11µA Supplier Device Package: PG-TSOP6-6 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSL202SNL6327 | Infineon Technologies |  Description: SMALL SIGNAL N-CHANNEL MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| D3041N68TXPSA1 | Infineon Technologies |  Description: DIODE GEN PURP 6.8KV 4090A | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| D3041N58TXPSA1 | Infineon Technologies |  Description: DIODE GEN PURP 5.8KV 4090A | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | EVALM12ED2106STOBO1 | Infineon Technologies |  Description: EVAL BOARD FOR M12ED2106S Packaging: Bulk Function: Motor Controller/Driver, Stepper Type: Power Management Utilized IC / Part: M12ED2106S Supplied Contents: Board(s) Part Status: Active Contents: Board(s) | на замовлення 2 шт:термін постачання 21-31 дні (днів) | 
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|   | TLD1310ELXUMA1 | Infineon Technologies |  Description: IC LED DRVR LINEAR 120MA 14SSOP Packaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 3 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-5 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Part Status: Active Grade: Automotive | на замовлення 2500 шт:термін постачання 21-31 дні (днів) | 
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|   | TLD1310ELXUMA1 | Infineon Technologies |  Description: IC LED DRVR LINEAR 120MA 14SSOP Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 3 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-5 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Part Status: Active Grade: Automotive | на замовлення 2500 шт:термін постачання 21-31 дні (днів) | 
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| IRF3709ZSTRRPBF |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
    Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| IRF3709ZSTRRPBF |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
    Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| BB837E6327HTSA1 |  | 
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C25
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
    Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C25
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
на замовлення 66085 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2377+ | 10.22 грн | 
| BAS3005A-02VE6327 |  | 
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
    Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| BAS3005A-02VH6327 |  | 
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
    Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| IPP80N04S304AKSA1 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
на замовлення 452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 334+ | 63.77 грн | 
| IPP80N04S3-03 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 345+ | 70.80 грн | 
| IPP80N04S2-H4 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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| CY8C4127AXI-S443 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
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| IRLR7843TRLPBF |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
    Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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| IRLR7843TRLPBF |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
    Description: MOSFET N-CH 30V 161A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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| BAT5405WH6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
    Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 105895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 15+ | 22.30 грн | 
| 24+ | 13.36 грн | 
| 100+ | 8.35 грн | 
| 500+ | 5.79 грн | 
| 1000+ | 5.13 грн | 
| TLE4263GXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA PG-DSO-20
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.3 mA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
    Description: IC REG LINEAR 5V 200MA PG-DSO-20
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.3 mA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 330+ | 71.67 грн | 
| TLE4263GSNTMA1 |  | 
Виробник: Infineon Technologies
Description: IC REG LINEAR LDO 5V 0.2A 8DSOP
Packaging: Tape & Reel (TR)
Part Status: Active
    Description: IC REG LINEAR LDO 5V 0.2A 8DSOP
Packaging: Tape & Reel (TR)
Part Status: Active
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| IRG4IBC10UDPBF |  | 
Виробник: Infineon Technologies
Description: IGBT 600V 6.8A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 25 W
    Description: IGBT 600V 6.8A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 25 W
на замовлення 2157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 155+ | 137.47 грн | 
| SLF9630ID1XFSA2 | 
Виробник: Infineon Technologies
Description: TRANSPORT TICKETING
    Description: TRANSPORT TICKETING
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| BAS4007WH6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
    Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 12242 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 13+ | 26.43 грн | 
| 21+ | 15.67 грн | 
| 100+ | 9.85 грн | 
| 500+ | 6.87 грн | 
| 1000+ | 6.10 грн | 
| BF517E6327 |  | 
Виробник: Infineon Technologies
Description: RF 0.025, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
    Description: RF 0.025, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
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| CY7C1460AV33-167BZC |  | 
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
    Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 6+ | 4435.83 грн | 
| IPP114N03LGHKSA1 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 12496 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 944+ | 24.41 грн | 
| IPP114N03LG |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 12946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 693+ | 35.52 грн | 
| TLE4473GV52AUMA1 |  | 
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 165 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 2.6V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
    Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 165 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 2.6V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 183+ | 125.93 грн | 
| TLE7469G V52 |  | 
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
    Description: IC REG LINEAR FIXED LDO REG
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| CY7C1315JV18-300BZC |  | 
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
    Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 3463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 9+ | 2846.80 грн | 
| TLE4207GXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 5V-18V 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5V ~ 18V
Applications: General Purpose
Voltage - Load: 5V ~ 18V
Supplier Device Package: P-DSO-14-8
Motor Type - AC, DC: Brushed DC
    Description: IC MOTOR DRIVER 5V-18V 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5V ~ 18V
Applications: General Purpose
Voltage - Load: 5V ~ 18V
Supplier Device Package: P-DSO-14-8
Motor Type - AC, DC: Brushed DC
на замовлення 69341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 289+ | 82.43 грн | 
| DD1200S33KL2C_B5 |  | 
Виробник: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: No
Supplier Device Package: A-IHV130-6
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1800 W
    Description: RECTIFIER DIODE MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: No
Supplier Device Package: A-IHV130-6
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1800 W
на замовлення 17 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 98186.59 грн | 
| DD1200S12H4 |  | 
Виробник: Infineon Technologies
Description: DIODE MOD GP 1200V AGIHMB130-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-2
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 1200 A
    Description: DIODE MOD GP 1200V AGIHMB130-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-2
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 1200 A
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| DD1200S33K2CB3S2NDSA1 |  | 
Виробник: Infineon Technologies
Description: DIODE MOD GP 3300V 1200A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
Current - Reverse Leakage @ Vr: 1700 A @ 1800 V
    Description: DIODE MOD GP 3300V 1200A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
Current - Reverse Leakage @ Vr: 1700 A @ 1800 V
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| DD1200S33K2CB3NOSA1 |  | 
Виробник: Infineon Technologies
Description: DIODE MOD GP 3300V 1200A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
Current - Reverse Leakage @ Vr: 1700 A @ 1800 V
    Description: DIODE MOD GP 3300V 1200A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
Current - Reverse Leakage @ Vr: 1700 A @ 1800 V
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| IKW40N65ET7XKSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/310ns
Switching Energy: 1.05mJ (on), 590µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230.8 W
Grade: Automotive
Qualification: AEC-Q101
    Description: IGBT TRENCH FS 650V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/310ns
Switching Energy: 1.05mJ (on), 590µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230.8 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 71 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 299.87 грн | 
| 30+ | 159.66 грн | 
| SAK-XC2267-72F66LAC | 
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8/10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
    Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8/10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
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| BSM50GD120DLCBOSA1 | 
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 85A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
    Description: IGBT MOD 1200V 85A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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| KTY23-5 |  | 
Виробник: Infineon Technologies
Description: CURRENT OUTPUT TEMP SENSOR
    Description: CURRENT OUTPUT TEMP SENSOR
на замовлення 146619 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| KTY21-7 |  | 
Виробник: Infineon Technologies
Description: SENSOR PTC 1.015KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1.015 kOhms
    Description: SENSOR PTC 1.015KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1.015 kOhms
на замовлення 127864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 799+ | 29.93 грн | 
| KTY21-5 |  | 
Виробник: Infineon Technologies
Description: THERMISTOR PTC 985 OHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 985 Ohms
    Description: THERMISTOR PTC 985 OHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 985 Ohms
на замовлення 84680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 611+ | 37.00 грн | 
| CY7C1568KV18-550BZXC |  | 
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
    Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 219 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 27217.19 грн | 
| CY62157DV30LL-55BVXI |  | 
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
    Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 719 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 43+ | 542.20 грн | 
| IR2118STRPBF |  | 
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
    Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1454 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 140.44 грн | 
| 10+ | 99.83 грн | 
| 25+ | 90.91 грн | 
| 100+ | 76.14 грн | 
| 250+ | 71.77 грн | 
| 500+ | 69.13 грн | 
| 1000+ | 65.86 грн | 
| S29GL01GT12TFN010 |  | 
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
    Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 1359.74 грн | 
| 10+ | 1212.57 грн | 
| TLE9180D31QKXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
    Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1900+ | 239.60 грн | 
| TLE9180D31QKXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
    Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7008 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 456.00 грн | 
| 10+ | 337.05 грн | 
| 25+ | 311.64 грн | 
| 100+ | 266.29 грн | 
| 250+ | 253.81 грн | 
| 500+ | 246.29 грн | 
| BSF134N10NJ3 G |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
на замовлення 4635 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 317+ | 78.48 грн | 
| STT800N18P55XPSA1 |  | 
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 60Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
    Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 60Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
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| IMC301AF064XUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
    Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
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| IMC302AF064XUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
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| PEB4265V V1.1 |  | 
на замовлення 1745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 72+ | 318.45 грн | 
| PEB4265VV1.1 |  | 
на замовлення 588 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 72+ | 318.45 грн | 
| PEB4265VV1.2 |  | 
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 63+ | 364.80 грн | 
| XMC1402T038X0128AAXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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| XMC1402T038X0128AAXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2799 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 235.44 грн | 
| 10+ | 169.92 грн | 
| 25+ | 155.57 грн | 
| 100+ | 131.26 грн | 
| 250+ | 124.23 грн | 
| 500+ | 119.99 грн | 
| 1000+ | 114.59 грн | 
| BSL214NL6327 |  | 
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
    Description: SMALL SIGNAL N-CHANNEL MOSFET
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| BSL215PL6327 |  | 
Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
    Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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| BSL205NL6327 |  | 
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
    Description: SMALL SIGNAL N-CHANNEL MOSFET
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| BSL207NL6327 |  | 
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
    Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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| BSL202SNL6327 |  | 
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
    Description: SMALL SIGNAL N-CHANNEL MOSFET
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| D3041N68TXPSA1 |  | 
Виробник: Infineon Technologies
Description: DIODE GEN PURP 6.8KV 4090A
    Description: DIODE GEN PURP 6.8KV 4090A
товару немає в наявності
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| D3041N58TXPSA1 |  | 
Виробник: Infineon Technologies
Description: DIODE GEN PURP 5.8KV 4090A
    Description: DIODE GEN PURP 5.8KV 4090A
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| EVALM12ED2106STOBO1 |  | 
Виробник: Infineon Technologies
Description: EVAL BOARD FOR M12ED2106S
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: M12ED2106S
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
    Description: EVAL BOARD FOR M12ED2106S
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: M12ED2106S
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 21312.30 грн | 
| TLD1310ELXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
    Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 35.10 грн | 
| TLD1310ELXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
    Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 83.44 грн | 
| 10+ | 57.67 грн | 
| 25+ | 52.06 грн | 
| 100+ | 43.09 грн | 
| 250+ | 40.34 грн | 
| 500+ | 38.68 грн | 
| 1000+ | 36.70 грн |