Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149466) > Сторінка 380 з 2492

Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 375 376 377 378 379 380 381 382 383 384 385 498 747 996 1245 1494 1743 1992 2241 2490 2492  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
SAB-C161PI-LFAA SAB-C161PI-LFAA Infineon Technologies INFNS01619-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
40+560.81 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SAB-C161O-LM3V-HA SAB-C161O-LM3V-HA Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
34+657.32 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SABC161PILFCA SABC161PILFCA Infineon Technologies INFNS00746-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SABC161PILF3VCA Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAB-C161PI-LF3VCA Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SABC161OLM3VHA SABC161OLM3VHA Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Number of I/O: 63
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IKW30N65ET7XKSA1 IKW30N65ET7XKSA1 Infineon Technologies Infineon-IKW30N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351beb15f57f2 Description: IGBT TRENCH FS 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 590µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 180 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Qualification: AEC-Q101
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
1+320.73 грн
30+171.93 грн
120+141.61 грн
В кошику  од. на суму  грн.
SPD50P03L SPD50P03L Infineon Technologies SPD50P03L.pdf Description: MOSFET PCH -30V -50A TO252-5-3
товару немає в наявності
В кошику  од. на суму  грн.
SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 Infineon Technologies SPD50N03S2-07G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY14B256L-SP35XC CY14B256L-SP35XC Infineon Technologies CY14B256L_RevI.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
29+784.20 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
KITACTBRD60R022S7TOBO1 KITACTBRD60R022S7TOBO1 Infineon Technologies Infineon-Evaluation_kit_KIT_ACT_BRD_60R022S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170875742d51d3f Description: ACTIVE BRIDGE BOARD KIT_ACT_BRD_
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3950.41 грн
В кошику  од. на суму  грн.
CY2DP1504ZXCT CY2DP1504ZXCT Infineon Technologies Infineon-CY2DP1504ZXI-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec668e23c9c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 2:4 1.5GHZ 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVPECL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 1.5 GHz
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+193.87 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
XMC1301T038F0008AAXUMA1 XMC1301T038F0008AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 8KB FLASH 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
400+56.77 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
XMC1202T016X0032AAXUMA1 XMC1202T016X0032AAXUMA1 Infineon Technologies XMC1200.pdf Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
на замовлення 4240 шт:
термін постачання 21-31 дні (днів)
325+67.37 грн
Мінімальне замовлення: 325
В кошику  од. на суму  грн.
XMC1202T028X0032ABXUMA1 XMC1202T028X0032ABXUMA1 Infineon Technologies Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+88.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XMC1202T028X0032ABXUMA1 XMC1202T028X0032ABXUMA1 Infineon Technologies Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 3294 шт:
термін постачання 21-31 дні (днів)
2+170.69 грн
10+122.47 грн
25+111.89 грн
100+94.07 грн
250+88.86 грн
500+85.71 грн
1000+81.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC1100-T016X0064AAXUMA1 XMC1100-T016X0064AAXUMA1 Infineon Technologies Infineon-xmc1100_AB-DS-v01_07-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
XMC1402Q040X0128AAXUMA1 XMC1402Q040X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 13889 шт:
термін постачання 21-31 дні (днів)
2+223.88 грн
10+161.23 грн
25+147.73 грн
100+124.66 грн
250+117.99 грн
500+113.98 грн
1000+108.86 грн
2500+105.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC13S2T038X0032ABXUMA1 XMC13S2T038X0032ABXUMA1 Infineon Technologies Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
XMC13S2T038X0200ABXUMA1 XMC13S2T038X0200ABXUMA1 Infineon Technologies Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
XMC1302T038X0200A XMC1302T038X0200A Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
XMC1202Q040X0032ABXUMA1 XMC1202Q040X0032ABXUMA1 Infineon Technologies XMC1200.pdf Description: IC MCU 32BIT 32KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
2+202.44 грн
10+174.92 грн
25+165.04 грн
100+131.97 грн
250+123.91 грн
500+108.42 грн
1000+88.36 грн
2500+82.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
1+365.19 грн
10+258.86 грн
100+186.41 грн
500+169.63 грн
В кошику  од. на суму  грн.
IPW65R099CFD7AXKSA1 IPW65R099CFD7AXKSA1 Infineon Technologies Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912 Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+466.01 грн
В кошику  од. на суму  грн.
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 8641 шт:
термін постачання 21-31 дні (днів)
1+405.68 грн
10+261.23 грн
100+187.82 грн
500+172.91 грн
В кошику  од. на суму  грн.
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R099C6 IPI65R099C6 Infineon Technologies INFNS17322-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
1+412.03 грн
10+268.11 грн
100+193.66 грн
В кошику  од. на суму  грн.
IPI65R099C6XKSA1 IPI65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO615NGXUMA1 BSO615NGXUMA1 Infineon Technologies Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSO615NGXUMA1 BSO615NGXUMA1 Infineon Technologies Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2155 шт:
термін постачання 21-31 дні (днів)
3+125.43 грн
10+76.30 грн
100+51.04 грн
500+37.72 грн
1000+34.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSM50GP120BOSA1 BSM50GP120BOSA1 Infineon Technologies BSM50GP120_6-17-2003.pdf Description: IGBT MODULE 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE6251GNT TLE6251GNT Infineon Technologies Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 400 mV
Duplex: Full
Part Status: Active
на замовлення 451 шт:
термін постачання 21-31 дні (днів)
283+73.99 грн
Мінімальне замовлення: 283
В кошику  од. на суму  грн.
SAKTC1797384F150EFACKXUMA1 Infineon Technologies INFNS30466-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SPB10N10LG SPB10N10LG Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
на замовлення 993 шт:
термін постачання 21-31 дні (днів)
717+31.99 грн
Мінімальне замовлення: 717
В кошику  од. на суму  грн.
BSC0901NSIATMA1 BSC0901NSIATMA1 Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC0901NSIATMA1 BSC0901NSIATMA1 Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 374 шт:
термін постачання 21-31 дні (днів)
3+130.20 грн
10+79.51 грн
100+53.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KP275E1505XTMA1 Infineon Technologies Infineon-KP275-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b1a430d485f4f Description: INTEGRATED PRESSURE SENS
товару немає в наявності
В кошику  од. на суму  грн.
KP276C1505XTMA1 Infineon Technologies Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182 Description: INTEGRATED PRESSURE SENS
товару немає в наявності
В кошику  од. на суму  грн.
BAT17-04WH6327 BAT17-04WH6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.7pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 33900 шт:
термін постачання 21-31 дні (днів)
3435+6.51 грн
Мінімальне замовлення: 3435
В кошику  од. на суму  грн.
IPB407N30NATMA1 IPB407N30NATMA1 Infineon Technologies Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474 Description: MOSFET N-CH 300V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB407N30NATMA1 IPB407N30NATMA1 Infineon Technologies Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474 Description: MOSFET N-CH 300V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
на замовлення 841 шт:
термін постачання 21-31 дні (днів)
1+702.59 грн
10+464.35 грн
100+344.54 грн
500+297.00 грн
В кошику  од. на суму  грн.
KIT_AURIX_TC275_LITE KIT_AURIX_TC275_LITE Infineon Technologies Description: AURIX TC275 LITE KIT
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
1+3395.48 грн
В кошику  од. на суму  грн.
BGA925L6E6327XTSA1 BGA925L6E6327XTSA1 Infineon Technologies BGA925L6.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGA925L6E6327XTSA1 BGA925L6E6327XTSA1 Infineon Technologies BGA925L6.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ICE3A2565FKLA1 ICE3A2565FKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 68 W
товару немає в наявності
В кошику  од. на суму  грн.
BCR562E6327 BCR562E6327 Infineon Technologies INFNS10743-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
товару немає в наявності
В кошику  од. на суму  грн.
BFP196WH6327 Infineon Technologies Description: RF TRANSISTOR, L BAND, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BFP196WE6327 BFP196WE6327 Infineon Technologies SIEMD096-1245.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
на замовлення 32200 шт:
термін постачання 21-31 дні (днів)
2077+10.60 грн
Мінімальне замовлення: 2077
В кошику  од. на суму  грн.
BFP196WH6740 BFP196WH6740 Infineon Technologies Infineon-BFP196W-DS-v01_01-en.pdf?fileId=db3a30431400ef680114267ecec60628 Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
1484+15.14 грн
Мінімальне замовлення: 1484
В кошику  од. на суму  грн.
BSC884N03MSG BSC884N03MSG Infineon Technologies INFNS16417-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
на замовлення 14149 шт:
термін постачання 21-31 дні (днів)
866+27.79 грн
Мінімальне замовлення: 866
В кошику  од. на суму  грн.
BSF024N03LT3G Infineon Technologies INFNS27838-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
на замовлення 9963 шт:
термін постачання 21-31 дні (днів)
547+40.27 грн
Мінімальне замовлення: 547
В кошику  од. на суму  грн.
IPP034N03LG IPP034N03LG Infineon Technologies INFNS16315-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
437+51.62 грн
Мінімальне замовлення: 437
В кошику  од. на суму  грн.
BSB165N15NZ3GXUMA1 BSB165N15NZ3GXUMA1 Infineon Technologies BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843 Description: MOSFET N-CH 150V 9A/45A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPLK60R360PFD7ATMA1 IPLK60R360PFD7ATMA1 Infineon Technologies Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95 Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPLK60R360PFD7ATMA1 IPLK60R360PFD7ATMA1 Infineon Technologies Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95 Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 4201 шт:
термін постачання 21-31 дні (днів)
3+115.91 грн
10+75.38 грн
100+57.00 грн
500+42.45 грн
1000+39.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC886N03LSG BSC886N03LSG Infineon Technologies INFNS15759-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
на замовлення 4609 шт:
термін постачання 21-31 дні (днів)
1205+19.14 грн
Мінімальне замовлення: 1205
В кошику  од. на суму  грн.
SAB-C161PI-LFAA INFNS01619-1.pdf?t.download=true&u=5oefqw
SAB-C161PI-LFAA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+560.81 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SAB-C161O-LM3V-HA INFNS11060-1.pdf?t.download=true&u=5oefqw
SAB-C161O-LM3V-HA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+657.32 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SABC161PILFCA INFNS00746-1.pdf?t.download=true&u=5oefqw
SABC161PILFCA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SABC161PILF3VCA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAB-C161PI-LF3VCA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SABC161OLM3VHA INFNS11060-1.pdf?t.download=true&u=5oefqw
SABC161OLM3VHA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Number of I/O: 63
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IKW30N65ET7XKSA1 Infineon-IKW30N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351beb15f57f2
IKW30N65ET7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 590µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 180 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Qualification: AEC-Q101
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+320.73 грн
30+171.93 грн
120+141.61 грн
В кошику  од. на суму  грн.
SPD50P03L SPD50P03L.pdf
SPD50P03L
Виробник: Infineon Technologies
Description: MOSFET PCH -30V -50A TO252-5-3
товару немає в наявності
В кошику  од. на суму  грн.
SPD50N03S207GBTMA1 SPD50N03S2-07G.pdf
SPD50N03S207GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY14B256L-SP35XC CY14B256L_RevI.pdf
CY14B256L-SP35XC
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+784.20 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
KITACTBRD60R022S7TOBO1 Infineon-Evaluation_kit_KIT_ACT_BRD_60R022S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170875742d51d3f
KITACTBRD60R022S7TOBO1
Виробник: Infineon Technologies
Description: ACTIVE BRIDGE BOARD KIT_ACT_BRD_
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3950.41 грн
В кошику  од. на суму  грн.
CY2DP1504ZXCT Infineon-CY2DP1504ZXI-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec668e23c9c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2DP1504ZXCT
Виробник: Infineon Technologies
Description: IC CLK BUFFER 2:4 1.5GHZ 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVPECL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 1.5 GHz
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+193.87 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
XMC1301T038F0008AAXUMA1 XMC1300.pdf
XMC1301T038F0008AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
400+56.77 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
XMC1202T016X0032AAXUMA1 XMC1200.pdf
XMC1202T016X0032AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
на замовлення 4240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
325+67.37 грн
Мінімальне замовлення: 325
В кошику  од. на суму  грн.
XMC1202T028X0032ABXUMA1 Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t
XMC1202T028X0032ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+88.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XMC1202T028X0032ABXUMA1 Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t
XMC1202T028X0032ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 3294 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+170.69 грн
10+122.47 грн
25+111.89 грн
100+94.07 грн
250+88.86 грн
500+85.71 грн
1000+81.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC1100-T016X0064AAXUMA1 Infineon-xmc1100_AB-DS-v01_07-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd
XMC1100-T016X0064AAXUMA1
Виробник: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
XMC1402Q040X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0128AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 13889 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.88 грн
10+161.23 грн
25+147.73 грн
100+124.66 грн
250+117.99 грн
500+113.98 грн
1000+108.86 грн
2500+105.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC13S2T038X0032ABXUMA1
XMC13S2T038X0032ABXUMA1
Виробник: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
XMC13S2T038X0200ABXUMA1
XMC13S2T038X0200ABXUMA1
Виробник: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
XMC1302T038X0200A Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T038X0200A
Виробник: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
XMC1202Q040X0032ABXUMA1 XMC1200.pdf
XMC1202Q040X0032ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+202.44 грн
10+174.92 грн
25+165.04 грн
100+131.97 грн
250+123.91 грн
500+108.42 грн
1000+88.36 грн
2500+82.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+365.19 грн
10+258.86 грн
100+186.41 грн
500+169.63 грн
В кошику  од. на суму  грн.
IPW65R099CFD7AXKSA1 Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912
IPW65R099CFD7AXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+466.01 грн
В кошику  од. на суму  грн.
IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 8641 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+405.68 грн
10+261.23 грн
100+187.82 грн
500+172.91 грн
В кошику  од. на суму  грн.
IPB65R099C6ATMA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R099C6ATMA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R099C6 INFNS17322-1.pdf?t.download=true&u=5oefqw
IPI65R099C6
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+412.03 грн
10+268.11 грн
100+193.66 грн
В кошику  од. на суму  грн.
IPI65R099C6XKSA1 IPx65R099C6.pdf
IPI65R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO615NGXUMA1 Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac
BSO615NGXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSO615NGXUMA1 Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac
BSO615NGXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.43 грн
10+76.30 грн
100+51.04 грн
500+37.72 грн
1000+34.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSM50GP120BOSA1 BSM50GP120_6-17-2003.pdf
BSM50GP120BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE6251GNT Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE6251GNT
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 400 mV
Duplex: Full
Part Status: Active
на замовлення 451 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
283+73.99 грн
Мінімальне замовлення: 283
В кошику  од. на суму  грн.
SAKTC1797384F150EFACKXUMA1 INFNS30466-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SPB10N10LG
SPB10N10LG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
на замовлення 993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
717+31.99 грн
Мінімальне замовлення: 717
В кошику  од. на суму  грн.
BSC0901NSIATMA1 BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC0901NSIATMA1 BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.20 грн
10+79.51 грн
100+53.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KP275E1505XTMA1 Infineon-KP275-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b1a430d485f4f
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
товару немає в наявності
В кошику  од. на суму  грн.
KP276C1505XTMA1 Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
товару немає в наявності
В кошику  од. на суму  грн.
BAT17-04WH6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT17-04WH6327
Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.7pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 33900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3435+6.51 грн
Мінімальне замовлення: 3435
В кошику  од. на суму  грн.
IPB407N30NATMA1 Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474
IPB407N30NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB407N30NATMA1 Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474
IPB407N30NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
на замовлення 841 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+702.59 грн
10+464.35 грн
100+344.54 грн
500+297.00 грн
В кошику  од. на суму  грн.
KIT_AURIX_TC275_LITE
KIT_AURIX_TC275_LITE
Виробник: Infineon Technologies
Description: AURIX TC275 LITE KIT
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3395.48 грн
В кошику  од. на суму  грн.
BGA925L6E6327XTSA1 BGA925L6.pdf
BGA925L6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGA925L6E6327XTSA1 BGA925L6.pdf
BGA925L6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ICE3A2565FKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A2565FKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 68 W
товару немає в наявності
В кошику  од. на суму  грн.
BCR562E6327 INFNS10743-1.pdf?t.download=true&u=5oefqw
BCR562E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
товару немає в наявності
В кошику  од. на суму  грн.
BFP196WH6327
Виробник: Infineon Technologies
Description: RF TRANSISTOR, L BAND, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BFP196WE6327 SIEMD096-1245.pdf?t.download=true&u=5oefqw
BFP196WE6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
на замовлення 32200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2077+10.60 грн
Мінімальне замовлення: 2077
В кошику  од. на суму  грн.
BFP196WH6740 Infineon-BFP196W-DS-v01_01-en.pdf?fileId=db3a30431400ef680114267ecec60628
BFP196WH6740
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1484+15.14 грн
Мінімальне замовлення: 1484
В кошику  од. на суму  грн.
BSC884N03MSG INFNS16417-1.pdf?t.download=true&u=5oefqw
BSC884N03MSG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
на замовлення 14149 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
866+27.79 грн
Мінімальне замовлення: 866
В кошику  од. на суму  грн.
BSF024N03LT3G INFNS27838-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
на замовлення 9963 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
547+40.27 грн
Мінімальне замовлення: 547
В кошику  од. на суму  грн.
IPP034N03LG INFNS16315-1.pdf?t.download=true&u=5oefqw
IPP034N03LG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
437+51.62 грн
Мінімальне замовлення: 437
В кошику  од. на суму  грн.
BSB165N15NZ3GXUMA1 BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843
BSB165N15NZ3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 9A/45A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPLK60R360PFD7ATMA1 Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95
IPLK60R360PFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPLK60R360PFD7ATMA1 Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95
IPLK60R360PFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 4201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.91 грн
10+75.38 грн
100+57.00 грн
500+42.45 грн
1000+39.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC886N03LSG INFNS15759-1.pdf?t.download=true&u=5oefqw
BSC886N03LSG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
на замовлення 4609 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1205+19.14 грн
Мінімальне замовлення: 1205
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 375 376 377 378 379 380 381 382 383 384 385 498 747 996 1245 1494 1743 1992 2241 2490 2492  [ Наступна Сторінка >> ]