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FS100R17N3E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
товару немає в наявності
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IFS150B17N3E4PB11BPSA1 Infineon Technologies Infineon-IFS150B17N3E4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94ae58b32e1a Description: IGBT MOD 1700V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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FS75R12KT4B11BOSA1 FS75R12KT4B11BOSA1 Infineon Technologies Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130 Description: IGBT MOD 1200V 75A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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BC817-16B5000 BC817-16B5000 Infineon Technologies INFNS12118-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
10764+2.12 грн
Мінімальне замовлення: 10764
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BC817-16B5003 BC817-16B5003 Infineon Technologies INFNS12118-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10764+2.12 грн
Мінімальне замовлення: 10764
В кошику  од. на суму  грн.
SAF-XE162FM-48F80L AA SAF-XE162FM-48F80L AA Infineon Technologies XE162xM.pdf Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
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IM240M6Y1BAKSA1 Infineon Technologies IM240-M6xxB.pdf Description: MODULE IPM 3PHASE 23DIP
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
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IPG20N06S2L65ATMA1 IPG20N06S2L65ATMA1 Infineon Technologies Infineon-IPG20N06S2L_65-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a3c2672326cf Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+26.59 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPG20N06S2L65ATMA1 IPG20N06S2L65ATMA1 Infineon Technologies Infineon-IPG20N06S2L_65-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a3c2672326cf Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 26521 шт:
термін постачання 21-31 дні (днів)
3+110.82 грн
10+67.66 грн
100+45.12 грн
500+33.27 грн
1000+30.35 грн
2000+29.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLI493DA2B6HTSA1 TLI493DA2B6HTSA1 Infineon Technologies TLI493D-A2B6_v1.3_4-9-19.pdf Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+42.19 грн
6000+39.30 грн
9000+38.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLI493DA2B6HTSA1 TLI493DA2B6HTSA1 Infineon Technologies TLI493D-A2B6_v1.3_4-9-19.pdf Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
на замовлення 10967 шт:
термін постачання 21-31 дні (днів)
4+83.51 грн
5+70.99 грн
10+67.43 грн
25+59.36 грн
50+56.68 грн
100+54.22 грн
500+48.48 грн
1000+46.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCR183S BCR183S Infineon Technologies INFNS17188-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Active
на замовлення 101966 шт:
термін постачання 21-31 дні (днів)
10377+2.30 грн
Мінімальне замовлення: 10377
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FF400R12KE3S5HOSA1 Infineon Technologies INFNS28395-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
2+12205.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI60R199CP Infineon Technologies Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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BAT68E6359HTMA1 Infineon Technologies INFNS15410-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
4157+5.62 грн
Мінімальне замовлення: 4157
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BAT68-06E6327 BAT68-06E6327 Infineon Technologies INFNS15410-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
2308+10.44 грн
Мінімальне замовлення: 2308
В кошику  од. на суму  грн.
AUIRF6215STRL AUIRF6215STRL Infineon Technologies auirf6215s.pdf?fileId=5546d462533600a4015355acf0a713ca Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
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ISS17EP06LMXTSA1 ISS17EP06LMXTSA1 Infineon Technologies Infineon-ISS17EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0731173673a6 Description: MOSFET P-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V
на замовлення 47400 шт:
термін постачання 21-31 дні (днів)
13+24.89 грн
21+14.85 грн
100+7.20 грн
500+6.39 грн
1000+5.70 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BTS50201EKAXUMA1 BTS50201EKAXUMA1 Infineon Technologies Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
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BTS50201EKAXUMA1 BTS50201EKAXUMA1 Infineon Technologies Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)
3+137.32 грн
10+96.97 грн
25+88.28 грн
100+73.89 грн
250+69.63 грн
500+67.06 грн
1000+63.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TC275T64F200NDCKXUMA1 TC275T64F200NDCKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+1535.63 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
TC275T64F200NDCKXUMA1 TC275T64F200NDCKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
1+2295.83 грн
10+1788.36 грн
25+1682.99 грн
100+1470.76 грн
250+1418.96 грн
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TC277T64F200NDCKXUMA1 TC277T64F200NDCKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
товару немає в наявності
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TC277T64F200SDCLXUMA1 TC277T64F200SDCLXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
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ICE3GS03LJGXUMA1 ICE3GS03LJGXUMA1 Infineon Technologies ICE3GS03LJG.pdf Description: IC OFFLINE SWITCH FLYBACK 8DSO
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
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ICE3B0365 ICE3B0365 Infineon Technologies INFNS22601-1.pdf?t.download=true&u=5oefqw Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8357 шт:
термін постачання 21-31 дні (днів)
487+43.77 грн
Мінімальне замовлення: 487
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BCR185WE6327 BCR185WE6327 Infineon Technologies INFNS11751-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 375000 шт:
термін постачання 21-31 дні (днів)
10764+2.12 грн
Мінімальне замовлення: 10764
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BCR183WE6327 BCR183WE6327 Infineon Technologies INFNS11627-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
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BCR185E6327 BCR185E6327 Infineon Technologies INFNS11751-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR183WH6327 BCR183WH6327 Infineon Technologies INFNS17188-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
7123+3.00 грн
Мінімальне замовлення: 7123
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BCR185WH6327 BCR185WH6327 Infineon Technologies Infineon-BCR185SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a3730114403af22402d4 Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 45301 шт:
термін постачання 21-31 дні (днів)
6571+3.81 грн
Мінімальне замовлення: 6571
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BSZ031NE2LS5ATMA1 BSZ031NE2LS5ATMA1 Infineon Technologies Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
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BSZ031NE2LS5ATMA1 BSZ031NE2LS5ATMA1 Infineon Technologies Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
на замовлення 2008 шт:
термін постачання 21-31 дні (днів)
5+79.50 грн
10+51.50 грн
100+38.96 грн
500+29.49 грн
1000+26.03 грн
2000+25.38 грн
Мінімальне замовлення: 5
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PSB21483FV1.6 PSB21483FV1.6 Infineon Technologies Description: INCA-S CODEC
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
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FF225R12MS4BOSA1 FF225R12MS4BOSA1 Infineon Technologies Infineon-FF225R12MS4-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113ba985a0e00b0 Description: IGBT MOD 1200V 275A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+12466.84 грн
В кошику  од. на суму  грн.
PZTA14H6327XTSA1 PZTA14H6327XTSA1 Infineon Technologies pzta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e89099018b Description: TRANS NPN DARL 30V 0.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.5 W
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
1176+19.55 грн
Мінімальне замовлення: 1176
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CY8C4127FNI-BL483T CY8C4127FNI-BL483T Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
4+105.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C4127FNI-BL483T CY8C4127FNI-BL483T Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CY8C4127FNI-BL483T CY8C4127FNI-BL483T Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CY8C4248FLI-BL483T Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C4248FNI-BL483T CY8C4248FNI-BL483T Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04×3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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DEMOSENSE2GOLPULSETOBO1 DEMOSENSE2GOLPULSETOBO1 Infineon Technologies Infineon-Sense2GoL%20Pulse-ProductBrief-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eb7b647e40f3f Description: SENSE2GOL PULSE BGT24LTR11 RADAR
Packaging: Bulk
For Use With/Related Products: BGT24LTR11, XMC4700
Frequency: 24GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 24GHz
Sensor Type: Radar
Utilized IC / Part: BGT24LTR11, XMC4700
Embedded: Yes, MCU, 32-Bit
Sensing Range: 18m
Contents: Board(s)
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
1+10067.43 грн
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KP214N2611XT KP214N2611XT Infineon Technologies INFNS15304-1.pdf?t.download=true&u=5oefqw Description: SENSOR 16.68PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.18V ~ 4.65V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
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BTS612N1E3128ABUMA1 BTS612N1E3128ABUMA1 Infineon Technologies INFN-S-A0002952951-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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BTN7970S BTN7970S Infineon Technologies INFNS11665-1.pdf?t.download=true&u=5oefqw Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 90A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Technology: DMOS
Supplier Device Package: P-TO220-7-11
Motor Type - Stepper: Unipolar
Grade: Automotive
Part Status: Obsolete
на замовлення 5755 шт:
термін постачання 21-31 дні (днів)
70+319.27 грн
Мінімальне замовлення: 70
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TDA7110FHTMA1 TDA7110FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TDA7110FHTMA1 TDA7110FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BSZ076N06NS3G BSZ076N06NS3G Infineon Technologies INFNS15383-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
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BSZ0702LSATMA1 BSZ0702LSATMA1 Infineon Technologies Infineon-BSZ0702LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b86789613d0 Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
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EVALPSIRS200XTOBO1 EVALPSIRS200XTOBO1 Infineon Technologies Infineon-EVAL-PS-IRS200x-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae54769b13bd6 Description: EVAL BOARD FOR PSIRS200X
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PSIRS200X
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+15086.28 грн
В кошику  од. на суму  грн.
IRL6372TRPBF IRL6372TRPBF Infineon Technologies irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579 Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+21.50 грн
8000+19.47 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL6372TRPBF IRL6372TRPBF Infineon Technologies irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579 Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 11036 шт:
термін постачання 21-31 дні (днів)
4+87.53 грн
10+43.15 грн
100+25.56 грн
500+20.65 грн
1000+20.26 грн
2000+20.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRL60SC216ARMA1 IRL60SC216ARMA1 Infineon Technologies Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товару немає в наявності
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IRL60SC216ARMA1 IRL60SC216ARMA1 Infineon Technologies Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товару немає в наявності
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PMB8870V1.1 Infineon Technologies PMB8870.pdf?t.download=true&u=ovmfp3 Description: S-GOLD GSM/E-GPRS BASEBAND IC
Packaging: Bulk
на замовлення 206000 шт:
термін постачання 21-31 дні (днів)
27+816.34 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MB90553BPMC-G-329-JNE1 Infineon Technologies Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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MB90553BPMC-G-353-JNE1 MB90553BPMC-G-353-JNE1 Infineon Technologies Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MB90553BPMC-G-373E1 MB90553BPMC-G-373E1 Infineon Technologies Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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IPT65R105G7XTMA1 IPT65R105G7XTMA1 Infineon Technologies Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23 Description: MOSFET N-CH 650V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
товару немає в наявності
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IPP530N15N3GXKSA1 IPP530N15N3GXKSA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A TO220-3
товару немає в наявності
В кошику  од. на суму  грн.
FS100R17N3E4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
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IFS150B17N3E4PB11BPSA1 Infineon-IFS150B17N3E4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94ae58b32e1a
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
товару немає в наявності
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FS75R12KT4B11BOSA1 Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130
FS75R12KT4B11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
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BC817-16B5000 INFNS12118-1.pdf?t.download=true&u=5oefqw
BC817-16B5000
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10764+2.12 грн
Мінімальне замовлення: 10764
В кошику  од. на суму  грн.
BC817-16B5003 INFNS12118-1.pdf?t.download=true&u=5oefqw
BC817-16B5003
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10764+2.12 грн
Мінімальне замовлення: 10764
В кошику  од. на суму  грн.
SAF-XE162FM-48F80L AA XE162xM.pdf
SAF-XE162FM-48F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
товару немає в наявності
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IM240M6Y1BAKSA1 IM240-M6xxB.pdf
Виробник: Infineon Technologies
Description: MODULE IPM 3PHASE 23DIP
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
товару немає в наявності
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IPG20N06S2L65ATMA1 Infineon-IPG20N06S2L_65-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a3c2672326cf
IPG20N06S2L65ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+26.59 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPG20N06S2L65ATMA1 Infineon-IPG20N06S2L_65-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a3c2672326cf
IPG20N06S2L65ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 26521 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+110.82 грн
10+67.66 грн
100+45.12 грн
500+33.27 грн
1000+30.35 грн
2000+29.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLI493DA2B6HTSA1 TLI493D-A2B6_v1.3_4-9-19.pdf
TLI493DA2B6HTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+42.19 грн
6000+39.30 грн
9000+38.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLI493DA2B6HTSA1 TLI493D-A2B6_v1.3_4-9-19.pdf
TLI493DA2B6HTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
на замовлення 10967 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.51 грн
5+70.99 грн
10+67.43 грн
25+59.36 грн
50+56.68 грн
100+54.22 грн
500+48.48 грн
1000+46.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCR183S INFNS17188-1.pdf?t.download=true&u=5oefqw
BCR183S
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Active
на замовлення 101966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10377+2.30 грн
Мінімальне замовлення: 10377
В кошику  од. на суму  грн.
FF400R12KE3S5HOSA1 INFNS28395-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+12205.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI60R199CP
Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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BAT68E6359HTMA1 INFNS15410-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4157+5.62 грн
Мінімальне замовлення: 4157
В кошику  од. на суму  грн.
BAT68-06E6327 INFNS15410-1.pdf?t.download=true&u=5oefqw
BAT68-06E6327
Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2308+10.44 грн
Мінімальне замовлення: 2308
В кошику  од. на суму  грн.
AUIRF6215STRL auirf6215s.pdf?fileId=5546d462533600a4015355acf0a713ca
AUIRF6215STRL
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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ISS17EP06LMXTSA1 Infineon-ISS17EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0731173673a6
ISS17EP06LMXTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V
на замовлення 47400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.89 грн
21+14.85 грн
100+7.20 грн
500+6.39 грн
1000+5.70 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BTS50201EKAXUMA1 Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc
BTS50201EKAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
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BTS50201EKAXUMA1 Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc
BTS50201EKAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.32 грн
10+96.97 грн
25+88.28 грн
100+73.89 грн
250+69.63 грн
500+67.06 грн
1000+63.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TC275T64F200NDCKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC275T64F200NDCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+1535.63 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
TC275T64F200NDCKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC275T64F200NDCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2295.83 грн
10+1788.36 грн
25+1682.99 грн
100+1470.76 грн
250+1418.96 грн
В кошику  од. на суму  грн.
TC277T64F200NDCKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC277T64F200NDCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
товару немає в наявності
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TC277T64F200SDCLXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC277T64F200SDCLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
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ICE3GS03LJGXUMA1 ICE3GS03LJG.pdf
ICE3GS03LJGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ICE3B0365 INFNS22601-1.pdf?t.download=true&u=5oefqw
ICE3B0365
Виробник: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8357 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
487+43.77 грн
Мінімальне замовлення: 487
В кошику  од. на суму  грн.
BCR185WE6327 INFNS11751-1.pdf?t.download=true&u=5oefqw
BCR185WE6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 375000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10764+2.12 грн
Мінімальне замовлення: 10764
В кошику  од. на суму  грн.
BCR183WE6327 INFNS11627-1.pdf?t.download=true&u=5oefqw
BCR183WE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
товару немає в наявності
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BCR185E6327 INFNS11751-1.pdf?t.download=true&u=5oefqw
BCR185E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
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BCR183WH6327 INFNS17188-1.pdf?t.download=true&u=5oefqw
BCR183WH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7123+3.00 грн
Мінімальне замовлення: 7123
В кошику  од. на суму  грн.
BCR185WH6327 Infineon-BCR185SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a3730114403af22402d4
BCR185WH6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 45301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6571+3.81 грн
Мінімальне замовлення: 6571
В кошику  од. на суму  грн.
BSZ031NE2LS5ATMA1 Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa
BSZ031NE2LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
товару немає в наявності
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BSZ031NE2LS5ATMA1 Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa
BSZ031NE2LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
на замовлення 2008 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+79.50 грн
10+51.50 грн
100+38.96 грн
500+29.49 грн
1000+26.03 грн
2000+25.38 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PSB21483FV1.6
PSB21483FV1.6
Виробник: Infineon Technologies
Description: INCA-S CODEC
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FF225R12MS4BOSA1 Infineon-FF225R12MS4-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113ba985a0e00b0
FF225R12MS4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 275A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12466.84 грн
В кошику  од. на суму  грн.
PZTA14H6327XTSA1 pzta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e89099018b
PZTA14H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.5 W
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1176+19.55 грн
Мінімальне замовлення: 1176
В кошику  од. на суму  грн.
CY8C4127FNI-BL483T Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4127FNI-BL483T
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C4127FNI-BL483T Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4127FNI-BL483T
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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CY8C4127FNI-BL483T Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4127FNI-BL483T
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CY8C4248FLI-BL483T Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C4248FNI-BL483T Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4248FNI-BL483T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04×3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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DEMOSENSE2GOLPULSETOBO1 Infineon-Sense2GoL%20Pulse-ProductBrief-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eb7b647e40f3f
DEMOSENSE2GOLPULSETOBO1
Виробник: Infineon Technologies
Description: SENSE2GOL PULSE BGT24LTR11 RADAR
Packaging: Bulk
For Use With/Related Products: BGT24LTR11, XMC4700
Frequency: 24GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 24GHz
Sensor Type: Radar
Utilized IC / Part: BGT24LTR11, XMC4700
Embedded: Yes, MCU, 32-Bit
Sensing Range: 18m
Contents: Board(s)
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10067.43 грн
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KP214N2611XT INFNS15304-1.pdf?t.download=true&u=5oefqw
KP214N2611XT
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.18V ~ 4.65V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
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BTS612N1E3128ABUMA1 INFN-S-A0002952951-1.pdf?t.download=true&u=5oefqw
BTS612N1E3128ABUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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BTN7970S INFNS11665-1.pdf?t.download=true&u=5oefqw
BTN7970S
Виробник: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 90A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Technology: DMOS
Supplier Device Package: P-TO220-7-11
Motor Type - Stepper: Unipolar
Grade: Automotive
Part Status: Obsolete
на замовлення 5755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
70+319.27 грн
Мінімальне замовлення: 70
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TDA7110FHTMA1 fundamentals-of-power-semiconductors
TDA7110FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TDA7110FHTMA1 fundamentals-of-power-semiconductors
TDA7110FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BSZ076N06NS3G INFNS15383-1.pdf?t.download=true&u=5oefqw
BSZ076N06NS3G
Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
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BSZ0702LSATMA1 Infineon-BSZ0702LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b86789613d0
BSZ0702LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
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EVALPSIRS200XTOBO1 Infineon-EVAL-PS-IRS200x-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae54769b13bd6
EVALPSIRS200XTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR PSIRS200X
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PSIRS200X
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15086.28 грн
В кошику  од. на суму  грн.
IRL6372TRPBF irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579
IRL6372TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+21.50 грн
8000+19.47 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL6372TRPBF irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579
IRL6372TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 11036 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.53 грн
10+43.15 грн
100+25.56 грн
500+20.65 грн
1000+20.26 грн
2000+20.09 грн
Мінімальне замовлення: 4
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IRL60SC216ARMA1 Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea
IRL60SC216ARMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
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IRL60SC216ARMA1 Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea
IRL60SC216ARMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
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PMB8870V1.1 PMB8870.pdf?t.download=true&u=ovmfp3
Виробник: Infineon Technologies
Description: S-GOLD GSM/E-GPRS BASEBAND IC
Packaging: Bulk
на замовлення 206000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+816.34 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MB90553BPMC-G-329-JNE1
Виробник: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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MB90553BPMC-G-353-JNE1
MB90553BPMC-G-353-JNE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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MB90553BPMC-G-373E1
MB90553BPMC-G-373E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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IPT65R105G7XTMA1 Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23
IPT65R105G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
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IPP530N15N3GXKSA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPP530N15N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO220-3
товару немає в наявності
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