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IMM102T046MXUMA1 IMM102T046MXUMA1 Infineon Technologies Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83 Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
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IMM102T046MXUMA1 IMM102T046MXUMA1 Infineon Technologies Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83 Description: IMOTION
Packaging: Bulk
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
50+481.16 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IMM100A046MXUMA1 Infineon Technologies Description: IMOTION
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TLE4269GMXUMA2 TLE4269GMXUMA2 Infineon Technologies Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57 Description: IC REG LIN 5V 150MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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TLE4269GMXUMA2 TLE4269GMXUMA2 Infineon Technologies Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57 Description: IC REG LIN 5V 150MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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IAUA250N04S6N006AUMA1 IAUA250N04S6N006AUMA1 Infineon Technologies Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2000+156.63 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUA250N04S6N006AUMA1 IAUA250N04S6N006AUMA1 Infineon Technologies Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8077 шт:
термін постачання 21-31 дні (днів)
1+332.15 грн
10+229.44 грн
100+170.92 грн
500+141.55 грн
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IAUA250N04S6N007EAUMA1 IAUA250N04S6N007EAUMA1 Infineon Technologies Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+77.98 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUA250N04S6N007EAUMA1 IAUA250N04S6N007EAUMA1 Infineon Technologies Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4260 шт:
термін постачання 21-31 дні (днів)
3+126.61 грн
10+105.30 грн
100+92.13 грн
500+86.26 грн
Мінімальне замовлення: 3
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IPD75N04S4-06 IPD75N04S4-06 Infineon Technologies INFNS15024-1.pdf?t.download=true&u=5oefqw Description: IPD75N04 - 20V-40V N-CHANNEL AUT
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IR3825MTRPBF Infineon Technologies IR3825_Rev3.7_3-24-16.pdf Description: IC REG BUCK CTRLR PQFN
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IMM100A015MXUMA1 Infineon Technologies Description: IMOTION
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SAF-XC824MT-1FGIAA SAF-XC824MT-1FGIAA Infineon Technologies INFNS19723-1.pdf?t.download=true&u=5oefqw Description: 8051 COMPATIBLE 8-BIT MCU
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 25.6MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-DSO-20-45
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 98863 шт:
термін постачання 21-31 дні (днів)
274+82.73 грн
Мінімальне замовлення: 274
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IPS65R950C6 IPS65R950C6 Infineon Technologies INFNS19166-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR
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IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 Infineon Technologies Infineon-IPD65R950CFD-DS-v02_01-en.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433efacd9a013f0a7335ee3163 Description: MOSFET N-CH 650V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 36.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
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SAB-C165-LF3V SAB-C165-LF3V Infineon Technologies INFNS21451-1.pdf?t.download=true&u=5oefqw Description: SAB-C165-LF 3V HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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SAL-XC886CLM-8FFA5VAC Infineon Technologies INFNS15605-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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SAL-XC886CM-8FFA5VAC Infineon Technologies INFNS15605-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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MA2304PNSXUMA1 MA2304PNSXUMA1 Infineon Technologies Infineon-MA2304PNS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182921adfee00e7 Description: THE MA2304PNS IS A 2X37 W AUDIO
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 74W x 1 @ 2Ohm; 37W x 2 @ 4Ohm
Supplier Device Package: PG-VQFN-40
Part Status: Active
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MA2304PNSXUMA1 MA2304PNSXUMA1 Infineon Technologies Infineon-MA2304PNS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182921adfee00e7 Description: THE MA2304PNS IS A 2X37 W AUDIO
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 74W x 1 @ 2Ohm; 37W x 2 @ 4Ohm
Supplier Device Package: PG-VQFN-40
Part Status: Active
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PSF21150HV1.4 PSF21150HV1.4 Infineon Technologies Description: IPAC-X ISDN PC ADAPTER CIRCUIT
Packaging: Bulk
на замовлення 1417 шт:
термін постачання 21-31 дні (днів)
28+769.19 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
IR35212MTRPBF IR35212MTRPBF Infineon Technologies Description: IC CONTROLLER 48QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)
79+301.44 грн
Мінімальне замовлення: 79
В кошику  од. на суму  грн.
ADM6993FX-AD-T-1 ADM6993FX-AD-T-1 Infineon Technologies ADM6993_X_DS_green_version_1.pdf Description: IC ETHERNET CONVERTER 128QFP
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX/FX PHY
Supplier Device Package: PG-FQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 6971 шт:
термін постачання 21-31 дні (днів)
32+707.45 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DF300R07PE4_B6 Infineon Technologies INFNS28244-1.pdf?t.download=true&u=5oefqw Description: DFXR07P - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
2+15236.38 грн
Мінімальне замовлення: 2
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F3L300R12MT4_B22 Infineon Technologies INFNS28263-1.pdf?t.download=true&u=5oefqw Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 473 шт:
термін постачання 21-31 дні (днів)
2+20250.35 грн
Мінімальне замовлення: 2
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F3L300R12MT4_B23 Infineon Technologies INFNS28264-1.pdf?t.download=true&u=5oefqw Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
2+20250.35 грн
Мінімальне замовлення: 2
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FD300R07PE4_B6 Infineon Technologies INFNS28305-1.pdf?t.download=true&u=5oefqw Description: FD300R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
2+15424.65 грн
Мінімальне замовлення: 2
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FZ1600R12HP4NPSA1 Infineon Technologies INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+48134.51 грн
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FP50R07N2E4_B11 Infineon Technologies INFN-S-A0003209815-1.pdf?t.download=true&u=5oefqw Description: FP50R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
5+5351.15 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2EDB7259YXUMA1 2EDB7259YXUMA1 Infineon Technologies Infineon-2EDB7259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef75791141 Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+58.41 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDB7259YXUMA1 2EDB7259YXUMA1 Infineon Technologies Infineon-2EDB7259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef75791141 Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)
3+116.75 грн
10+82.50 грн
25+74.93 грн
100+62.53 грн
250+58.82 грн
500+56.58 грн
1000+53.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DF419MR20W3M1HFB11BPSA1 DF419MR20W3M1HFB11BPSA1 Infineon Technologies Infineon-DF4-19MR20W3M1HF_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401833b4361e55669 Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+18097.51 грн
В кошику  од. на суму  грн.
MB9DF566MABEQ-GTK5E1 Infineon Technologies Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
товару немає в наявності
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MB9DF566MGBEQ-GTK5E1 Infineon Technologies Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MB9DF566MAEEQ-GTK5E1 Infineon Technologies Infineon-CY9D560_Series_32_bit_Microcontroller_Traveo(TM)_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee000906572&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MB9DF566MADEQ-GTK5E1 Infineon Technologies Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
товару немає в наявності
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IPA65R225C7 IPA65R225C7 Infineon Technologies INFNS29946-1.pdf?t.download=true&u=5oefqw Description: IPA65R225 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 1360 шт:
термін постачання 21-31 дні (днів)
213+109.72 грн
Мінімальне замовлення: 213
В кошику  од. на суму  грн.
IRLML6401TRPBF-1 Infineon Technologies irlml6401pbf-1.pdf?fileId=5546d462533600a401535668c0792636 Description: MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: PG-SOT23-3-901
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
товару немає в наявності
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IPW50R350CP IPW50R350CP Infineon Technologies INFNS16484-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 4320 шт:
термін постачання 21-31 дні (днів)
245+101.13 грн
Мінімальне замовлення: 245
В кошику  од. на суму  грн.
IPA50R350CP IPA50R350CP Infineon Technologies INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw Description: 10A, 500V, 0.35OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
247+100.30 грн
Мінімальне замовлення: 247
В кошику  од. на суму  грн.
F3L400R07ME4B22BOSA1 F3L400R07ME4B22BOSA1 Infineon Technologies Infineon-F3L400R07ME4_B22-DS-v03_01-en_de.pdf?fileId=db3a304334c41e910134d71e3ba942ac Description: IGBT MOD 650V 450A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
2+20029.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FZ2400R12HE4B9NPSA1 Infineon Technologies INFNS27080-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+71239.01 грн
В кошику  од. на суму  грн.
FZ2400R12HP4B9NPSA1 Infineon Technologies INFNS28638-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3550 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+61160.91 грн
В кошику  од. на суму  грн.
FZ2400R12HP4NPSA1 Infineon Technologies INFN-S-A0006155711-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
1+52637.51 грн
В кошику  од. на суму  грн.
TT370N18KOFHPSA1 TT370N18KOFHPSA1 Infineon Technologies TT370N18KOF_Rev3.2_1-12-23.pdf Description: THYR / DIODE MODULE DK
Packaging: Bulk
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+16784.51 грн
В кошику  од. на суму  грн.
IRLR4343TRL IRLR4343TRL Infineon Technologies IRLR4343%2C%20IRLU4343%2C-701.pdf Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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IRFP3077PBFXKMA1 Infineon Technologies Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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ESD253B1W0201E6327XTSA1 ESD253B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f Description: TVS DIODE 24VWM 30VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
товару немає в наявності
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ESD253B1W0201E6327XTSA1 ESD253B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f Description: TVS DIODE 24VWM 30VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
на замовлення 2020 шт:
термін постачання 21-31 дні (днів)
31+10.69 грн
44+7.20 грн
106+2.99 грн
500+2.67 грн
1000+2.54 грн
2000+2.50 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
IRF7420TRPBF-1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
товару немає в наявності
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IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 Infineon Technologies IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+38.25 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 Infineon Technologies IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 29787 шт:
термін постачання 21-31 дні (днів)
3+131.55 грн
10+59.54 грн
100+47.10 грн
500+42.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 Infineon Technologies IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38 Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 Infineon Technologies IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38 Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3095 шт:
термін постачання 21-31 дні (днів)
3+143.06 грн
10+86.93 грн
100+57.16 грн
500+42.71 грн
1000+41.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY8C4125FNI-S433T CY8C4125FNI-S433T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
товару немає в наявності
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IGB15N65S5ATMA1 IGB15N65S5ATMA1 Infineon Technologies Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74 Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
товару немає в наявності
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IGB15N65S5ATMA1 IGB15N65S5ATMA1 Infineon Technologies Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74 Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
3+149.63 грн
10+92.55 грн
100+62.70 грн
500+46.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD390P06NMSAUMA1 IPD390P06NMSAUMA1 Infineon Technologies Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
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T1080N06TOFXPSA1 T1080N06TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
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IFX1021SJXUMA1 IFX1021SJXUMA1 Infineon Technologies INFNS17315-1.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER FULL 1/1 DSO-8
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IMM102T046MXUMA1 Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83
IMM102T046MXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
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IMM102T046MXUMA1 Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83
IMM102T046MXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Bulk
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+481.16 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IMM100A046MXUMA1
Виробник: Infineon Technologies
Description: IMOTION
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TLE4269GMXUMA2 Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57
TLE4269GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
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TLE4269GMXUMA2 Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57
TLE4269GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
товару немає в наявності
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IAUA250N04S6N006AUMA1
IAUA250N04S6N006AUMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+156.63 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUA250N04S6N006AUMA1
IAUA250N04S6N006AUMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8077 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+332.15 грн
10+229.44 грн
100+170.92 грн
500+141.55 грн
В кошику  од. на суму  грн.
IAUA250N04S6N007EAUMA1 Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29
IAUA250N04S6N007EAUMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+77.98 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUA250N04S6N007EAUMA1 Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29
IAUA250N04S6N007EAUMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.61 грн
10+105.30 грн
100+92.13 грн
500+86.26 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD75N04S4-06 INFNS15024-1.pdf?t.download=true&u=5oefqw
IPD75N04S4-06
Виробник: Infineon Technologies
Description: IPD75N04 - 20V-40V N-CHANNEL AUT
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IR3825MTRPBF IR3825_Rev3.7_3-24-16.pdf
Виробник: Infineon Technologies
Description: IC REG BUCK CTRLR PQFN
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IMM100A015MXUMA1
Виробник: Infineon Technologies
Description: IMOTION
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SAF-XC824MT-1FGIAA INFNS19723-1.pdf?t.download=true&u=5oefqw
SAF-XC824MT-1FGIAA
Виробник: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 25.6MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-DSO-20-45
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 98863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
274+82.73 грн
Мінімальне замовлення: 274
В кошику  од. на суму  грн.
IPS65R950C6 INFNS19166-1.pdf?t.download=true&u=5oefqw
IPS65R950C6
Виробник: Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR
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IPD65R950CFDBTMA1 Infineon-IPD65R950CFD-DS-v02_01-en.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433efacd9a013f0a7335ee3163
IPD65R950CFDBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 36.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
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SAB-C165-LF3V INFNS21451-1.pdf?t.download=true&u=5oefqw
SAB-C165-LF3V
Виробник: Infineon Technologies
Description: SAB-C165-LF 3V HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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SAL-XC886CLM-8FFA5VAC INFNS15605-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
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SAL-XC886CM-8FFA5VAC INFNS15605-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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MA2304PNSXUMA1 Infineon-MA2304PNS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182921adfee00e7
MA2304PNSXUMA1
Виробник: Infineon Technologies
Description: THE MA2304PNS IS A 2X37 W AUDIO
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 74W x 1 @ 2Ohm; 37W x 2 @ 4Ohm
Supplier Device Package: PG-VQFN-40
Part Status: Active
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MA2304PNSXUMA1 Infineon-MA2304PNS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182921adfee00e7
MA2304PNSXUMA1
Виробник: Infineon Technologies
Description: THE MA2304PNS IS A 2X37 W AUDIO
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 74W x 1 @ 2Ohm; 37W x 2 @ 4Ohm
Supplier Device Package: PG-VQFN-40
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
PSF21150HV1.4
PSF21150HV1.4
Виробник: Infineon Technologies
Description: IPAC-X ISDN PC ADAPTER CIRCUIT
Packaging: Bulk
на замовлення 1417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
28+769.19 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
IR35212MTRPBF
IR35212MTRPBF
Виробник: Infineon Technologies
Description: IC CONTROLLER 48QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
79+301.44 грн
Мінімальне замовлення: 79
В кошику  од. на суму  грн.
ADM6993FX-AD-T-1 ADM6993_X_DS_green_version_1.pdf
ADM6993FX-AD-T-1
Виробник: Infineon Technologies
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX/FX PHY
Supplier Device Package: PG-FQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 6971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
32+707.45 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DF300R07PE4_B6 INFNS28244-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: DFXR07P - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+15236.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4_B22 INFNS28263-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 473 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+20250.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4_B23 INFNS28264-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+20250.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FD300R07PE4_B6 INFNS28305-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: FD300R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+15424.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FZ1600R12HP4NPSA1 INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+48134.51 грн
В кошику  од. на суму  грн.
FP50R07N2E4_B11 INFN-S-A0003209815-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: FP50R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+5351.15 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2EDB7259YXUMA1 Infineon-2EDB7259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef75791141
2EDB7259YXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+58.41 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDB7259YXUMA1 Infineon-2EDB7259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef75791141
2EDB7259YXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.75 грн
10+82.50 грн
25+74.93 грн
100+62.53 грн
250+58.82 грн
500+56.58 грн
1000+53.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DF419MR20W3M1HFB11BPSA1 Infineon-DF4-19MR20W3M1HF_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401833b4361e55669
DF419MR20W3M1HFB11BPSA1
Виробник: Infineon Technologies
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18097.51 грн
В кошику  од. на суму  грн.
MB9DF566MABEQ-GTK5E1
Виробник: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
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MB9DF566MGBEQ-GTK5E1
Виробник: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
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MB9DF566MAEEQ-GTK5E1 Infineon-CY9D560_Series_32_bit_Microcontroller_Traveo(TM)_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee000906572&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
Виробник: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MB9DF566MADEQ-GTK5E1
Виробник: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R225C7 INFNS29946-1.pdf?t.download=true&u=5oefqw
IPA65R225C7
Виробник: Infineon Technologies
Description: IPA65R225 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 1360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
213+109.72 грн
Мінімальне замовлення: 213
В кошику  од. на суму  грн.
IRLML6401TRPBF-1 irlml6401pbf-1.pdf?fileId=5546d462533600a401535668c0792636
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: PG-SOT23-3-901
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
товару немає в наявності
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IPW50R350CP INFNS16484-1.pdf?t.download=true&u=5oefqw
IPW50R350CP
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 4320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
245+101.13 грн
Мінімальне замовлення: 245
В кошику  од. на суму  грн.
IPA50R350CP INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw
IPA50R350CP
Виробник: Infineon Technologies
Description: 10A, 500V, 0.35OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
247+100.30 грн
Мінімальне замовлення: 247
В кошику  од. на суму  грн.
F3L400R07ME4B22BOSA1 Infineon-F3L400R07ME4_B22-DS-v03_01-en_de.pdf?fileId=db3a304334c41e910134d71e3ba942ac
F3L400R07ME4B22BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+20029.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FZ2400R12HE4B9NPSA1 INFNS27080-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+71239.01 грн
В кошику  од. на суму  грн.
FZ2400R12HP4B9NPSA1 INFNS28638-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3550 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+61160.91 грн
В кошику  од. на суму  грн.
FZ2400R12HP4NPSA1 INFN-S-A0006155711-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+52637.51 грн
В кошику  од. на суму  грн.
TT370N18KOFHPSA1 TT370N18KOF_Rev3.2_1-12-23.pdf
TT370N18KOFHPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Bulk
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16784.51 грн
В кошику  од. на суму  грн.
IRLR4343TRL IRLR4343%2C%20IRLU4343%2C-701.pdf
IRLR4343TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
товару немає в наявності
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ESD253B1W0201E6327XTSA1 Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f
ESD253B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 30VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
товару немає в наявності
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ESD253B1W0201E6327XTSA1 Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f
ESD253B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 30VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
на замовлення 2020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.69 грн
44+7.20 грн
106+2.99 грн
500+2.67 грн
1000+2.54 грн
2000+2.50 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
IRF7420TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
товару немає в наявності
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IPG20N06S4L14AATMA1 IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097
IPG20N06S4L14AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+38.25 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPG20N06S4L14AATMA1 IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097
IPG20N06S4L14AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 29787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.55 грн
10+59.54 грн
100+47.10 грн
500+42.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPG20N10S4L35AATMA1 IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38
IPG20N10S4L35AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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IPG20N10S4L35AATMA1 IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38
IPG20N10S4L35AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3095 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.06 грн
10+86.93 грн
100+57.16 грн
500+42.71 грн
1000+41.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY8C4125FNI-S433T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125FNI-S433T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
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IGB15N65S5ATMA1 Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74
IGB15N65S5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
товару немає в наявності
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IGB15N65S5ATMA1 Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74
IGB15N65S5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.63 грн
10+92.55 грн
100+62.70 грн
500+46.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD390P06NMSAUMA1
IPD390P06NMSAUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
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T1080N06TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N06TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
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IFX1021SJXUMA1 INFNS17315-1.pdf?t.download=true&u=5oefqw
IFX1021SJXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
товару немає в наявності
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