Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149641) > Сторінка 481 з 2495
| Фото | Назва | Виробник | Інформація |
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| TD310N20KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 2600V 700A MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPA60R520C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 8.1A TO220-FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IDH05SG60CXKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 600V 5A PGTO2202Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
на замовлення 12303 шт: термін постачання 21-31 дні (днів) |
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TLE5045ICR050HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2Packaging: Cut Tape (CT) Features: Selectable Scale, Temperature Compensated Output Type: PWM Axis: Single Operating Temperature: -40°C ~ 125°C Technology: Hall Effect Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1941 шт: термін постачання 21-31 дні (днів) |
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TLE5045ICR050HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2Packaging: Tape & Box (TB) Features: Selectable Scale, Temperature Compensated Output Type: PWM Axis: Single Operating Temperature: -40°C ~ 125°C Technology: Hall Effect Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVALAUDAMP25TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR MA5332 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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CY8C20424-12LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSB2161TV1.1 | Infineon Technologies |
Description: ARCOFI-SP AUDIO RINGING CODECPackaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Audio Data Interface: Serial Operating Temperature: -25°C ~ 80°C Voltage - Supply, Analog: 4.75V ~ 5.25V Voltage - Supply, Digital: 4.75V ~ 5.25V Number of ADCs / DACs: 1 / 1 Sigma Delta: No Supplier Device Package: P-DSO-28 Part Status: Active |
на замовлення 5954 шт: термін постачання 21-31 дні (днів) |
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| FS100R12KT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 100A 515WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
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TLE493DP2B6MS2GOTOBO1 | Infineon Technologies |
Description: TLE493D-P2B6MS2GO KITPackaging: Bulk Sensitivity: 15.4LSB/mT, 7.7LSB/mT Interface: I2C Voltage - Supply: 2.8V ~ 3.5V Sensor Type: Magnetic, Hall Effect Utilized IC / Part: TLE493D-P2B6, XMC1100 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: ±160mT Contents: Board(s) |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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XMC13S2Q024X0032ABXUMA1 | Infineon Technologies | Description: 32-BIT INDUSTRIAL MICROCONTROLLE |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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XMC13S2Q024X0016ABXUMA1 | Infineon Technologies | Description: XMC13S2 - 32-BIT INDUSTRIAL MICR |
на замовлення 2646 шт: термін постачання 21-31 дні (днів) |
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XMC1302T038X0128ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 38TSSOP Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1302T038X0128ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 38TSSOP Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 2845 шт: термін постачання 21-31 дні (днів) |
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XMC1302T028X0016ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28TSSOPPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 16KB (16K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XMC1302T028X0016ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28TSSOPPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 16KB (16K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLD22522RCLEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD2252-2EPPackaging: Bulk Voltage - Input: 8V ~ 16V Contents: Board(s) Current - Output / Channel: 120mA Utilized IC / Part: TLD2252-2EP Supplied Contents: Board(s) Outputs and Type: 2 Non-Isolated Outputs |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IPP065N03LGXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVALIM67D130FLEXKITTOBO1 | Infineon Technologies |
Description: EVAL KIT FOR IM67D130Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM67D130 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BCR431UXTSA1 | Infineon Technologies |
Description: IC LED DRV LIN NO 36.5MA SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 36.5mA Internal Switch(s): Yes Supplier Device Package: PG-SOT23-6 Dimming: No Voltage - Supply (Min): 6V Voltage - Supply (Max): 42 V Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BCR431UXTSA1 | Infineon Technologies |
Description: IC LED DRV LIN NO 36.5MA SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 36.5mA Internal Switch(s): Yes Supplier Device Package: PG-SOT23-6 Dimming: No Voltage - Supply (Min): 6V Voltage - Supply (Max): 42 V Part Status: Active |
на замовлення 6935 шт: термін постачання 21-31 дні (днів) |
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| TTB6C95N16LOF | Infineon Technologies |
Description: SCR MODULE 1.6KV 75A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Bridge, 3-Phase - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz Number of SCRs, Diodes: 6 SCRs Current - On State (It (AV)) (Max): 130 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 75 A Voltage - Off State: 1.6 kV |
на замовлення 236 шт: термін постачання 21-31 дні (днів) |
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BTS54220LBAAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm, 27mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS54220LBAAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm, 27mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS54220LBEAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 5A Ratio - Input:Output: 1:2 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS54220LBFAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 5A Ratio - Input:Output: 1:2 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IDP12E120XKSA1390 | Infineon Technologies |
Description: IDP12E120 - SILICON POWER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WLC1115-68LQXQ | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Tray Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
на замовлення 254 шт: термін постачання 21-31 дні (днів) |
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WLC1115-68LQXQT | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Tape & Reel (TR) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WLC1115-68LQXQT | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Cut Tape (CT) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
на замовлення 425 шт: термін постачання 21-31 дні (днів) |
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IPS80R1K4P7 | Infineon Technologies |
Description: IPS80R1K4 - 800V COOLMOS N-CHANN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPS80R750P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 7A TO251-3 |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
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IPS80R2K4P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 2.5A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V |
на замовлення 2945 шт: термін постачання 21-31 дні (днів) |
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| FZ1600R17HP4_B21 | Infineon Technologies |
Description: FZ1600R17 - IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA NTC Thermistor: No Supplier Device Package: AG-IHMB130-2-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 130 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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SAB-80C515A-N18 | Infineon Technologies |
Description: LEGACY 8-BIT MCUPackaging: Bulk Package / Case: 68-LCC (J-Lead) Mounting Type: Surface Mount Speed: 18MHz RAM Size: 1.25K x 8 Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: 80C515 Data Converters: A/D 8x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: UART/USART Peripherals: POR, WDT Supplier Device Package: P-LCC-68 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPF05N03LAG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO252-3-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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PEB2235PV4.1IPAT | Infineon Technologies |
Description: ISDN PRIMARY ACCESS TRANSCEICERPackaging: Bulk Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Function: ISDN Interface: ISDN Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 190mA Supplier Device Package: P-DIP-28 Part Status: Active Number of Circuits: 32 |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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PEB2075PV1.3-IDEC | Infineon Technologies |
Description: ISDN D-CHANNEL EXCH. CONTROLLERPackaging: Bulk Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Function: ISDN Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 10mA Supplier Device Package: P-DIP-28 Part Status: Active |
на замовлення 1822 шт: термін постачання 21-31 дні (днів) |
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TLS810D1EJV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 100MA 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.65V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4067 шт: термін постачання 21-31 дні (днів) |
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BSC883N03LS G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC026N02KSG | Infineon Technologies |
Description: BSC026N02 - 12V-300V N-CHANNEL PPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
на замовлення 27190 шт: термін постачання 21-31 дні (днів) |
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BSC0503NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 22A/88A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
на замовлення 9378 шт: термін постачання 21-31 дні (днів) |
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BSC883N03MSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V |
на замовлення 73343 шт: термін постачання 21-31 дні (днів) |
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BSC883N03LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 14999 шт: термін постачання 21-31 дні (днів) |
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TLE94104EPXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 2A TSDSO-14Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 825mOhm LS, 825mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2A Technology: Power MOSFET Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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| SAB-C501G-1EM | Infineon Technologies |
Description: LEGACY 8-BIT MCUPackaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: OTP Core Processor: 8051 Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: UART/USART Peripherals: POR Supplier Device Package: P-MQFP-44 Part Status: Active Number of I/O: 32 DigiKey Programmable: Not Verified |
на замовлення 109 шт: термін постачання 21-31 дні (днів) |
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CYW170-01SXC | Infineon Technologies |
Description: IC CLK ZDB 133MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Input: Clock Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFP420H6740XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 160mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BFP420H6740XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 160mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
на замовлення 7806 шт: термін постачання 21-31 дні (днів) |
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IRGS4615DTRRPBF | Infineon Technologies |
Description: IGBT 600V 23A 99W D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 30ns/95ns Switching Energy: 70µJ (on), 145µJ (off) Test Condition: 400V, 8A, 47Ohm, 15V Gate Charge: 19 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 24 A Power - Max: 99 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPW90R120C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.9mA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DEMOBGT60TR13CTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT60TR13CPackaging: Bulk For Use With/Related Products: BGT60TR13C Frequency: 60GHz Type: Transceiver; RADAR Supplied Contents: Board(s) Sensitivity: 60GHz Sensor Type: Radar Utilized IC / Part: BGT60TR13C Contents: Board(s) |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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BSL716SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 2.5A TSOP-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 218µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSL373SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 2A TSOP-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSL806NH6327XTSA1 | Infineon Technologies |
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ011NE2LS5IATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 35A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V |
на замовлення 6761 шт: термін постачання 21-31 дні (днів) |
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ISK024NE2LM5AULA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-VSON-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: 6-PQFN Dual (2x2) Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ISK024NE2LM5AULA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-VSON-6Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: 6-PQFN Dual (2x2) Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V |
на замовлення 6821 шт: термін постачання 21-31 дні (днів) |
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DDB6U144N16RBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-8111Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: 150°C (TJ) Technology: Standard Supplier Device Package: AG-ECONO2A Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC037N08NS5TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 22A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 72µA Supplier Device Package: PG-TDSON-8-7 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. |
| TD310N20KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2600V 700A MODULE
Description: SCR MODULE 2600V 700A MODULE
товару немає в наявності
В кошику
од. на суму грн.
| IPA60R520C6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IDH05SG60CXKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE SIL CARB 600V 5A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 12303 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 147+ | 162.23 грн |
| TLE5045ICR050HALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1941 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.05 грн |
| 5+ | 94.95 грн |
| 10+ | 90.48 грн |
| 25+ | 79.78 грн |
| 50+ | 76.28 грн |
| 100+ | 73.08 грн |
| 500+ | 65.55 грн |
| 1000+ | 63.20 грн |
| TLE5045ICR050HALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Tape & Box (TB)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Tape & Box (TB)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| EVALAUDAMP25TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA5332
Description: EVAL BOARD FOR MA5332
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 27473.48 грн |
| CY8C20424-12LQXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| PSB2161TV1.1 |
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Виробник: Infineon Technologies
Description: ARCOFI-SP AUDIO RINGING CODEC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Audio
Data Interface: Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply, Analog: 4.75V ~ 5.25V
Voltage - Supply, Digital: 4.75V ~ 5.25V
Number of ADCs / DACs: 1 / 1
Sigma Delta: No
Supplier Device Package: P-DSO-28
Part Status: Active
Description: ARCOFI-SP AUDIO RINGING CODEC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Audio
Data Interface: Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply, Analog: 4.75V ~ 5.25V
Voltage - Supply, Digital: 4.75V ~ 5.25V
Number of ADCs / DACs: 1 / 1
Sigma Delta: No
Supplier Device Package: P-DSO-28
Part Status: Active
на замовлення 5954 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 756.35 грн |
| FS100R12KT4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 9180.24 грн |
| TLE493DP2B6MS2GOTOBO1 |
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Виробник: Infineon Technologies
Description: TLE493D-P2B6MS2GO KIT
Packaging: Bulk
Sensitivity: 15.4LSB/mT, 7.7LSB/mT
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P2B6, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±160mT
Contents: Board(s)
Description: TLE493D-P2B6MS2GO KIT
Packaging: Bulk
Sensitivity: 15.4LSB/mT, 7.7LSB/mT
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P2B6, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±160mT
Contents: Board(s)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2071.72 грн |
| XMC13S2Q024X0032ABXUMA1 |
Виробник: Infineon Technologies
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 154+ | 169.55 грн |
| XMC13S2Q024X0016ABXUMA1 |
Виробник: Infineon Technologies
Description: XMC13S2 - 32-BIT INDUSTRIAL MICR
Description: XMC13S2 - 32-BIT INDUSTRIAL MICR
на замовлення 2646 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 154+ | 169.55 грн |
| XMC1302T038X0128ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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В кошику
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| XMC1302T038X0128ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 224.93 грн |
| 10+ | 161.61 грн |
| 25+ | 147.93 грн |
| 100+ | 124.69 грн |
| 250+ | 117.96 грн |
| 500+ | 113.89 грн |
| 1000+ | 108.74 грн |
| XMC1302T028X0016ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 78.79 грн |
| XMC1302T028X0016ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.66 грн |
| 10+ | 120.05 грн |
| 25+ | 109.63 грн |
| 100+ | 92.10 грн |
| 250+ | 86.97 грн |
| 500+ | 83.88 грн |
| 1000+ | 80.00 грн |
| TLD22522RCLEVALTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8771.59 грн |
| IPP065N03LGXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
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од. на суму грн.
| EVALIM67D130FLEXKITTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2386.29 грн |
| BCR431UXTSA1 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.96 грн |
| 6000+ | 11.19 грн |
| BCR431UXTSA1 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
на замовлення 6935 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.22 грн |
| 17+ | 18.86 грн |
| 25+ | 16.78 грн |
| 100+ | 13.60 грн |
| 250+ | 12.57 грн |
| 500+ | 11.95 грн |
| 1000+ | 11.25 грн |
| TTB6C95N16LOF |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
на замовлення 236 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 8057.23 грн |
| BTS54220LBAAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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| BTS54220LBAAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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| BTS54220LBEAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
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| BTS54220LBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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| IDP12E120XKSA1390 |
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Виробник: Infineon Technologies
Description: IDP12E120 - SILICON POWER DIODE
Description: IDP12E120 - SILICON POWER DIODE
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| WLC1115-68LQXQ |
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Виробник: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
на замовлення 254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 430.78 грн |
| 10+ | 316.99 грн |
| 25+ | 292.53 грн |
| 80+ | 252.71 грн |
| 230+ | 238.22 грн |
| WLC1115-68LQXQT |
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Виробник: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| WLC1115-68LQXQT |
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Виробник: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
на замовлення 425 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 390.11 грн |
| 10+ | 287.18 грн |
| 25+ | 265.01 грн |
| 100+ | 225.83 грн |
| 250+ | 214.93 грн |
| IPS80R1K4P7 |
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Виробник: Infineon Technologies
Description: IPS80R1K4 - 800V COOLMOS N-CHANN
Description: IPS80R1K4 - 800V COOLMOS N-CHANN
товару немає в наявності
В кошику
од. на суму грн.
| IPS80R750P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
Description: MOSFET N-CH 800V 7A TO251-3
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 420+ | 61.42 грн |
| IPS80R2K4P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 848+ | 26.80 грн |
| FZ1600R17HP4_B21 |
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Виробник: Infineon Technologies
Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 80541.29 грн |
| SAB-80C515A-N18 |
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Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IPF05N03LAG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 547+ | 43.70 грн |
| PEB2235PV4.1IPAT |
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Виробник: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
на замовлення 84 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 1340.18 грн |
| PEB2075PV1.3-IDEC |
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Виробник: Infineon Technologies
Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
на замовлення 1822 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 1671.23 грн |
| TLS810D1EJV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.03 грн |
| 10+ | 82.33 грн |
| 25+ | 74.72 грн |
| 100+ | 62.22 грн |
| 250+ | 58.46 грн |
| 500+ | 56.20 грн |
| 1000+ | 53.44 грн |
| BSC883N03LS G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 916+ | 27.39 грн |
| BSC026N02KSG |
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Виробник: Infineon Technologies
Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
на замовлення 27190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 363+ | 68.89 грн |
| BSC0503NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
на замовлення 9378 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.31 грн |
| 10+ | 79.77 грн |
| 100+ | 53.42 грн |
| 500+ | 39.53 грн |
| 1000+ | 36.11 грн |
| 2000+ | 33.24 грн |
| BSC883N03MSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 73343 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 799+ | 29.85 грн |
| BSC883N03LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 14999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 916+ | 26.42 грн |
| TLE94104EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.72 грн |
| 10+ | 108.46 грн |
| 25+ | 98.76 грн |
| 100+ | 82.67 грн |
| 250+ | 77.90 грн |
| 500+ | 75.02 грн |
| 1000+ | 71.46 грн |
| SAB-C501G-1EM |
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Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
на замовлення 109 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 74+ | 313.90 грн |
| CYW170-01SXC |
Виробник: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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| BFP420H6740XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.53 грн |
| BFP420H6740XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 7806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.86 грн |
| 14+ | 23.98 грн |
| 25+ | 21.39 грн |
| 100+ | 17.45 грн |
| 250+ | 16.19 грн |
| 500+ | 15.43 грн |
| 1000+ | 14.56 грн |
| IRGS4615DTRRPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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| IPW90R120C3FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| DEMOBGT60TR13CTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Contents: Board(s)
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Contents: Board(s)
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 16013.47 грн |
| 10+ | 15384.73 грн |
| BSL716SNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
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| BSL373SNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP-6
Description: MOSFET N-CH 100V 2A TSOP-6
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| BSL806NH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
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| BSZ011NE2LS5IATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
на замовлення 6761 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 127.82 грн |
| 10+ | 106.14 грн |
| 25+ | 100.13 грн |
| 100+ | 86.28 грн |
| 250+ | 81.67 грн |
| 500+ | 78.40 грн |
| 1000+ | 74.09 грн |
| ISK024NE2LM5AULA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.07 грн |
| ISK024NE2LM5AULA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
на замовлення 6821 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.15 грн |
| 10+ | 52.43 грн |
| 100+ | 34.53 грн |
| 500+ | 25.20 грн |
| 1000+ | 22.89 грн |
| DDB6U144N16RBPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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| BSC037N08NS5TATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
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