Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124881) > Сторінка 481 з 2082
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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S29AL008J70TFA023 | Infineon Technologies |
Description: IC FLASH 8MBIT PARALLEL 48TSOPDigiKey Programmable: Not Verified Qualification: AEC-Q100 Grade: Automotive Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Packaging: Tape & Reel (TR) Memory Organization: 1M x 8, 512K x 16 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Part Status: Active Supplier Device Package: 48-TSOP Memory Format: FLASH |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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S29GL256S10DHSS50 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||
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IPA90R1K0C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 5.7A TO220-FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDD10SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO252-3Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 90 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 290pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IDD10SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO252-3Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 290pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 90 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 |
на замовлення 2388 шт: термін постачання 21-31 дні (днів) |
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IRLL1503 | Infineon Technologies |
Description: MOSFET N-CH 30V 75A SOT223Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. | ||||||||||||||
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IRFS7537PBF | Infineon Technologies |
Description: MOSFET N CH 60V 173A D2PAKPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 3.7V @ 150µA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 173A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TT700N22KOFHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TT700N22KOFHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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T4771N22TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 2900V 6820A DO200AE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDA5212XUMA1 | Infineon Technologies |
Description: RF RX ASK/FSK 902-928MHZ 28TSSOPPart Status: Obsolete Supplier Device Package: PG-TSSOP-28 Antenna Connector: PCB, Surface Mount Current - Receiving: 5.4mA Applications: RKE, Remote Control Systems Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Data Interface: PCB, Surface Mount Modulation or Protocol: ASK, FSK Frequency: 902MHz ~ 928MHz Mounting Type: Surface Mount Sensitivity: -109dBm Package / Case: 28-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFP4368PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 195A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 195A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19230 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4254EJSXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 70MA 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
на замовлення 5418 шт: термін постачання 21-31 дні (днів) |
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TLE4254EJAXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 70MA 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-27 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
на замовлення 3946 шт: термін постачання 21-31 дні (днів) |
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S29GL01GT11FHV010 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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ESD208-B1-02ELSE6327 | Infineon Technologies |
Description: TRANS VOLTAGE SUPPRESSOR DIODE |
на замовлення 14984 шт: термін постачання 21-31 дні (днів) |
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MB91F467SAPMC-GS-N2K5E2 | Infineon Technologies | Description: IC MCU 32B 1.0625MB FLSH 176LQFP |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||||||||||
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MB91F467TAPMC-GS-N2K5E2 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLSH 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 1.0625MB (1.0625M x 8) RAM Size: 72K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: FR60 RISC Data Converters: A/D 32x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 109 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY91F467CBPMCR-GS-UJE2 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLSH 144LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S29GL128S90TFA020 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 910 шт В кошику од. на суму грн. | ||||||||||||||
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S29GL128S90TFA010 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 910 шт В кошику од. на суму грн. | ||||||||||||||
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TLE4254EJS | Infineon Technologies |
Description: TLE4254 - LINEAR VOLTAGE REGULAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4254EJA | Infineon Technologies |
Description: TLE4254 - LINEAR VOLTAGE REGULAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGT60ATR24CE6327XTMA1 | Infineon Technologies |
Description: SENSOR - RADAR SENSOR DIGITALSensor Type: Radar Sensor Operating Temperature: -40°C ~ 145°C (TJ) Output Type: Digital Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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BGT60ATR24CE6327XTMA1 | Infineon Technologies |
Description: SENSOR - RADAR SENSOR DIGITALSensor Type: Radar Sensor Operating Temperature: -40°C ~ 145°C (TJ) Output Type: Digital Packaging: Cut Tape (CT) |
на замовлення 3445 шт: термін постачання 21-31 дні (днів) |
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IPD25N06S240ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 29A TO252-31Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD25N06S240ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 29A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2406 шт: термін постачання 21-31 дні (днів) |
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1EDN7116GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 10VFDFNPackaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.2V ~ 11V Input Type: Non-Inverting Supplier Device Package: PG-VSON-10-4 Rise / Fall Time (Typ): 3ns, 3ns Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 1 Gate Type: GaN FET, MOSFET (N-Channel) Current - Peak Output (Source, Sink): 2A, 2A DigiKey Programmable: Not Verified High Side Voltage - Max (Bootstrap): 200 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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1EDN7116GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 10VFDFNPackaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.2V ~ 11V Input Type: Non-Inverting Supplier Device Package: PG-VSON-10-4 Rise / Fall Time (Typ): 3ns, 3ns Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 1 Gate Type: GaN FET, MOSFET (N-Channel) Current - Peak Output (Source, Sink): 2A, 2A DigiKey Programmable: Not Verified High Side Voltage - Max (Bootstrap): 200 V |
на замовлення 7374 шт: термін постачання 21-31 дні (днів) |
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D650S12TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 620A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D650S14TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.4KV 620A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D650S14TQRXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.4KV 620A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FP50R06KE3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 600V 60A AG-ECONO3-3-1Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 190 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO3-3-1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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TLE63892GVXUMA1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE63892GVXUMA1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| D3041N68TS04XPSA1 | Infineon Technologies |
Description: DIODE GP 6.8KV 4090A D12026K-1 Mounting Type: Chassis Mount Package / Case: DO-200AE Packaging: Bulk Current - Reverse Leakage @ Vr: 100 mA @ 6800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A Voltage - DC Reverse (Vr) (Max): 6800 V Operating Temperature - Junction: 160°C Supplier Device Package: BG-D12026K-1 Current - Average Rectified (Io): 4090A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BSZ058N03MSG | Infineon Technologies |
Description: BSZ058N03 - 12V-300V N-CHANNEL PSupplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 11233 шт: термін постачання 21-31 дні (днів) |
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CY25701FLXCT | Infineon Technologies |
Description: IC OSC XTAL PROG 4-CLCCPackaging: Cut Tape (CT) Package / Case: 4-CLCC Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Programmable Type: Blank (User Must Program) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Current - Supply (Max): 50mA Height - Seated (Max): 0.051" (1.30mm) Part Status: Obsolete Available Frequency Range: 10 MHz ~ 166 MHz Base Resonator: Crystal Supplier Device Package: 4-CLCC (5x3.2) |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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CY2547QI | Infineon Technologies |
Description: IC FANOUT DIST 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Output: Clock Frequency - Max: 166MHz Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Ratio - Input:Output: 2:8 Differential - Input:Output: No/No Supplier Device Package: 24-QFN (4x4) PLL: Yes with Bypass Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 4 DigiKey Programmable: Not Verified |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
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CY2547QI | Infineon Technologies |
Description: IC FANOUT DIST 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Output: Clock Frequency - Max: 166MHz Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Ratio - Input:Output: 2:8 Differential - Input:Output: No/No Supplier Device Package: 24-QFN (4x4) PLL: Yes with Bypass Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 4 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2450 шт В кошику од. на суму грн. | ||||||||||||||
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CY25561SXC | Infineon Technologies |
Description: IC CLK/FREQ SYNTH 8SOICRatio - Input:Output: 1:1 Voltage - Supply: 2.97V ~ 3.63V Operating Temperature: 0°C ~ 70°C Input: Clock, Crystal Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk DigiKey Programmable: Not Verified Number of Circuits: 1 Part Status: Active Divider/Multiplier: Yes/No PLL: Yes Supplier Device Package: 8-SOIC Differential - Input:Output: No/No |
на замовлення 15190 шт: термін постачання 21-31 дні (днів) |
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CHL8104-02CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPN60R1K0PFD7SATMA1 | Infineon Technologies |
Description: CONSUMER PG-SOT223-3Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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IPN60R1K0PFD7SATMA1 | Infineon Technologies |
Description: CONSUMER PG-SOT223-3Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 1402 шт: термін постачання 21-31 дні (днів) |
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PEB2080NVB1 | Infineon Technologies |
Description: S-BUS INTERFACE CIRCUITPower (Watts): 1 W Number of Circuits: 1 Part Status: Active Supplier Device Package: PG-LCC-28-R Current - Supply: 13mA Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: 0°C ~ 70°C Interface: S-Bus Function: S / T Bus Interface Transceiver Mounting Type: Surface Mount Package / Case: 28-LCC (J-Lead) Packaging: Bulk |
на замовлення 5973 шт: термін постачання 21-31 дні (днів) |
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PEB2080PVB1 | Infineon Technologies |
Description: S-BUS INTERFACE CIRCUITPower (Watts): 1 W Number of Circuits: 1 Part Status: Active Supplier Device Package: P-DIP-22 Current - Supply: 13mA Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: 0°C ~ 70°C Interface: S-Bus Function: S / T Bus Interface Transceiver Mounting Type: Through Hole Package / Case: 22-DIP (0.400", 10.16mm) Packaging: Bulk |
на замовлення 795 шт: термін постачання 21-31 дні (днів) |
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IKW50N65H5AXKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/173ns Switching Energy: 450µJ (on), 160µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 116 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FB20R06YE3B1BOMA1 | Infineon Technologies |
Description: IGBT MODULEInput Capacitance (Cies) @ Vce: 1.1 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 77 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 27 A NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| F3L300R12ME4_B22 | Infineon Technologies |
Description: F3L300R12 - IGBT MODULEInput Capacitance (Cies) @ Vce: 19 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 1550 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 450 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONOD-3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Half Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 206 шт: термін постачання 21-31 дні (днів) |
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KITA2GAUDIOSHIELDTOBO1 | Infineon Technologies |
Description: GENERIC AUDIO EVAL-KIT WITH CLASPart Status: Active Utilized IC / Part: IM67D120A, MA12070P Contents: Board(s) Type: Audio Function: Microphone Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BCP49E6327 | Infineon Technologies |
Description: BIPOLAR DARLINGTON TRANSISTORPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCP49E6419 | Infineon Technologies |
Description: BIPOLAR DARLINGTON TRANSISTORPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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TC327LP16F160SAAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 292LFBGAConnectivity: DMA, I2S, PWM, WDT Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16 SAR Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 152K x 8 Program Memory Size: 1MB (1M x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: PG-LFBGA-292-11 Peripherals: DMA, I2S, PWM, WDT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR 151T E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V 0.05A SC75Resistor - Emitter Base (R2): 100 kOhms Resistor - Base (R1): 100 kOhms Frequency - Transition: 120 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: PG-SC75-3D DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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BCR 153L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 250MW TSLP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR 151F E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 250MW TSFP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR 151L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V TSLP-3Resistor - Emitter Base (R2): 100 kOhms Resistor - Base (R1): 100 kOhms Frequency - Transition: 120 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: PG-TSLP-3-4 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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BCR 191L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V TSLP-3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
| PTFA092213ELV4T400XWSA1 | Infineon Technologies |
Description: IC RF FET LDMOS H-33288-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSO612CVG | Infineon Technologies |
Description: BSO612 - 20V-60V COMPLEMENTARY M |
товару немає в наявності |
В кошику од. на суму грн. |
| S29AL008J70TFA023 |
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Виробник: Infineon Technologies
Description: IC FLASH 8MBIT PARALLEL 48TSOP
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 1M x 8, 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Description: IC FLASH 8MBIT PARALLEL 48TSOP
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 1M x 8, 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
Supplier Device Package: 48-TSOP
Memory Format: FLASH
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| S29GL256S10DHSS50 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| IPA90R1K0C3XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.7A TO220-FP
Description: MOSFET N-CH 900V 5.7A TO220-FP
товару немає в наявності
В кошику
од. на суму грн.
| IDD10SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Description: DIODE SIL CARB 600V 10A TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IDD10SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO252-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Description: DIODE SIL CARB 600V 10A TO252-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
на замовлення 2388 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.12 грн |
| 10+ | 288.98 грн |
| 100+ | 208.39 грн |
| 500+ | 179.51 грн |
| IRLL1503 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 75A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Description: MOSFET N-CH 30V 75A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 80 шт
В кошику
од. на суму грн.
| IRFS7537PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 173A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: MOSFET N CH 60V 173A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
товару немає в наявності
В кошику
од. на суму грн.
| TT700N22KOFHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Description: THYR / DIODE MODULE DK
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 26115.08 грн |
| TT700N22KOFHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Description: THYR / DIODE MODULE DK
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| T4771N22TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2900V 6820A DO200AE
Description: SCR MODULE 2900V 6820A DO200AE
товару немає в наявності
В кошику
од. на суму грн.
| TDA5212XUMA1 |
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Виробник: Infineon Technologies
Description: RF RX ASK/FSK 902-928MHZ 28TSSOP
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-28
Antenna Connector: PCB, Surface Mount
Current - Receiving: 5.4mA
Applications: RKE, Remote Control Systems
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Frequency: 902MHz ~ 928MHz
Mounting Type: Surface Mount
Sensitivity: -109dBm
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: RF RX ASK/FSK 902-928MHZ 28TSSOP
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-28
Antenna Connector: PCB, Surface Mount
Current - Receiving: 5.4mA
Applications: RKE, Remote Control Systems
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Frequency: 902MHz ~ 928MHz
Mounting Type: Surface Mount
Sensitivity: -109dBm
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IRFP4368PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 195A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19230 pF @ 50 V
Description: MOSFET N-CH 75V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 195A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19230 pF @ 50 V
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| TLE4254EJSXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
на замовлення 5418 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.09 грн |
| 10+ | 63.12 грн |
| 25+ | 57.14 грн |
| 100+ | 47.47 грн |
| 250+ | 44.53 грн |
| 500+ | 42.76 грн |
| 1000+ | 41.38 грн |
| TLE4254EJAXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
на замовлення 3946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.09 грн |
| 10+ | 63.12 грн |
| 25+ | 57.14 грн |
| 100+ | 47.47 грн |
| 250+ | 44.53 грн |
| 500+ | 42.76 грн |
| 1000+ | 41.38 грн |
| S29GL01GT11FHV010 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 360 шт
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| ESD208-B1-02ELSE6327 |
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Виробник: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Description: TRANS VOLTAGE SUPPRESSOR DIODE
на замовлення 14984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7493+ | 2.84 грн |
| MB91F467SAPMC-GS-N2K5E2 |
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
товару немає в наявності
Мінімальне замовлення: 40 шт
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| MB91F467TAPMC-GS-N2K5E2 |
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 109
DigiKey Programmable: Not Verified
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 109
DigiKey Programmable: Not Verified
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| CY91F467CBPMCR-GS-UJE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
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| S29GL128S90TFA020 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 910 шт
В кошику
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| S29GL128S90TFA010 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 910 шт
В кошику
од. на суму грн.
| TLE4254EJS |
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Виробник: Infineon Technologies
Description: TLE4254 - LINEAR VOLTAGE REGULAT
Description: TLE4254 - LINEAR VOLTAGE REGULAT
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| TLE4254EJA |
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Виробник: Infineon Technologies
Description: TLE4254 - LINEAR VOLTAGE REGULAT
Description: TLE4254 - LINEAR VOLTAGE REGULAT
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| BGT60ATR24CE6327XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Sensor Type: Radar Sensor
Operating Temperature: -40°C ~ 145°C (TJ)
Output Type: Digital
Packaging: Tape & Reel (TR)
Description: SENSOR - RADAR SENSOR DIGITAL
Sensor Type: Radar Sensor
Operating Temperature: -40°C ~ 145°C (TJ)
Output Type: Digital
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
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| BGT60ATR24CE6327XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Sensor Type: Radar Sensor
Operating Temperature: -40°C ~ 145°C (TJ)
Output Type: Digital
Packaging: Cut Tape (CT)
Description: SENSOR - RADAR SENSOR DIGITAL
Sensor Type: Radar Sensor
Operating Temperature: -40°C ~ 145°C (TJ)
Output Type: Digital
Packaging: Cut Tape (CT)
на замовлення 3445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1926.83 грн |
| 10+ | 1619.51 грн |
| 25+ | 1537.65 грн |
| 100+ | 1337.68 грн |
| 250+ | 1274.67 грн |
| 500+ | 1230.23 грн |
| IPD25N06S240ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD25N06S240ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2406 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.73 грн |
| 10+ | 66.26 грн |
| 100+ | 44.07 грн |
| 500+ | 32.43 грн |
| 1000+ | 29.55 грн |
| 1EDN7116GXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 200 V
Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 200 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 23.11 грн |
| 1EDN7116GXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 200 V
Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 200 V
на замовлення 7374 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.48 грн |
| 10+ | 34.93 грн |
| 25+ | 31.41 грн |
| 100+ | 25.85 грн |
| 250+ | 24.10 грн |
| 500+ | 23.05 грн |
| 1000+ | 21.82 грн |
| D650S12TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 620A
Description: DIODE GEN PURP 1.2KV 620A
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| D650S14TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.4KV 620A
Description: DIODE GEN PURP 1.4KV 620A
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| D650S14TQRXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.4KV 620A
Description: DIODE GEN PURP 1.4KV 620A
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| FP50R06KE3GBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 600V 60A AG-ECONO3-3-1
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3-3-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 600V 60A AG-ECONO3-3-1
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3-3-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 8594.61 грн |
| TLE63892GVXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Description: IC REG CTRLR BUCK 14DSO
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| TLE63892GVXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Description: IC REG CTRLR BUCK 14DSO
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| D3041N68TS04XPSA1 |
Виробник: Infineon Technologies
Description: DIODE GP 6.8KV 4090A D12026K-1
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 6800 V
Operating Temperature - Junction: 160°C
Supplier Device Package: BG-D12026K-1
Current - Average Rectified (Io): 4090A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE GP 6.8KV 4090A D12026K-1
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 6800 V
Operating Temperature - Junction: 160°C
Supplier Device Package: BG-D12026K-1
Current - Average Rectified (Io): 4090A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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| BSZ058N03MSG |
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Виробник: Infineon Technologies
Description: BSZ058N03 - 12V-300V N-CHANNEL P
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: BSZ058N03 - 12V-300V N-CHANNEL P
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 11233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 886+ | 26.41 грн |
| CY25701FLXCT |
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Виробник: Infineon Technologies
Description: IC OSC XTAL PROG 4-CLCC
Packaging: Cut Tape (CT)
Package / Case: 4-CLCC
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Programmable Type: Blank (User Must Program)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 50mA
Height - Seated (Max): 0.051" (1.30mm)
Part Status: Obsolete
Available Frequency Range: 10 MHz ~ 166 MHz
Base Resonator: Crystal
Supplier Device Package: 4-CLCC (5x3.2)
Description: IC OSC XTAL PROG 4-CLCC
Packaging: Cut Tape (CT)
Package / Case: 4-CLCC
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Programmable Type: Blank (User Must Program)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 50mA
Height - Seated (Max): 0.051" (1.30mm)
Part Status: Obsolete
Available Frequency Range: 10 MHz ~ 166 MHz
Base Resonator: Crystal
Supplier Device Package: 4-CLCC (5x3.2)
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.55 грн |
| 10+ | 110.16 грн |
| 25+ | 100.51 грн |
| 100+ | 84.32 грн |
| CY2547QI |
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Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.25 грн |
| 10+ | 147.63 грн |
| 25+ | 135.24 грн |
| 100+ | 114.19 грн |
| CY2547QI |
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Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2450 шт
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| CY25561SXC |
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Виробник: Infineon Technologies
Description: IC CLK/FREQ SYNTH 8SOIC
Ratio - Input:Output: 1:1
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: 0°C ~ 70°C
Input: Clock, Crystal
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Description: IC CLK/FREQ SYNTH 8SOIC
Ratio - Input:Output: 1:1
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: 0°C ~ 70°C
Input: Clock, Crystal
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
на замовлення 15190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 369.60 грн |
| CHL8104-02CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Description: IC REG BUCK 40VQFN
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| IPN60R1K0PFD7SATMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: CONSUMER PG-SOT223-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| IPN60R1K0PFD7SATMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: CONSUMER PG-SOT223-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 1402 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.10 грн |
| 10+ | 50.26 грн |
| 100+ | 32.99 грн |
| 500+ | 23.99 грн |
| 1000+ | 21.75 грн |
| PEB2080NVB1 |
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Виробник: Infineon Technologies
Description: S-BUS INTERFACE CIRCUIT
Power (Watts): 1 W
Number of Circuits: 1
Part Status: Active
Supplier Device Package: PG-LCC-28-R
Current - Supply: 13mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: S-Bus
Function: S / T Bus Interface Transceiver
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
Description: S-BUS INTERFACE CIRCUIT
Power (Watts): 1 W
Number of Circuits: 1
Part Status: Active
Supplier Device Package: PG-LCC-28-R
Current - Supply: 13mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: S-Bus
Function: S / T Bus Interface Transceiver
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
на замовлення 5973 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 62+ | 348.16 грн |
| PEB2080PVB1 |
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Виробник: Infineon Technologies
Description: S-BUS INTERFACE CIRCUIT
Power (Watts): 1 W
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-DIP-22
Current - Supply: 13mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: S-Bus
Function: S / T Bus Interface Transceiver
Mounting Type: Through Hole
Package / Case: 22-DIP (0.400", 10.16mm)
Packaging: Bulk
Description: S-BUS INTERFACE CIRCUIT
Power (Watts): 1 W
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-DIP-22
Current - Supply: 13mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: S-Bus
Function: S / T Bus Interface Transceiver
Mounting Type: Through Hole
Package / Case: 22-DIP (0.400", 10.16mm)
Packaging: Bulk
на замовлення 795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 490.71 грн |
| IKW50N65H5AXKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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| FB20R06YE3B1BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 77 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 27 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 77 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 27 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 2242.37 грн |
| F3L300R12ME4_B22 |
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Виробник: Infineon Technologies
Description: F3L300R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD-3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: F3L300R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD-3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 24950.13 грн |
| KITA2GAUDIOSHIELDTOBO1 |
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Виробник: Infineon Technologies
Description: GENERIC AUDIO EVAL-KIT WITH CLAS
Part Status: Active
Utilized IC / Part: IM67D120A, MA12070P
Contents: Board(s)
Type: Audio
Function: Microphone
Packaging: Bulk
Description: GENERIC AUDIO EVAL-KIT WITH CLAS
Part Status: Active
Utilized IC / Part: IM67D120A, MA12070P
Contents: Board(s)
Type: Audio
Function: Microphone
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11762.11 грн |
| BCP49E6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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| BCP49E6419 |
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Виробник: Infineon Technologies
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| TC327LP16F160SAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 292LFBGA
Connectivity: DMA, I2S, PWM, WDT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16 SAR
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 152K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-LFBGA-292-11
Peripherals: DMA, I2S, PWM, WDT
Description: IC MCU 32BIT 1MB FLASH 292LFBGA
Connectivity: DMA, I2S, PWM, WDT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16 SAR
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 152K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-LFBGA-292-11
Peripherals: DMA, I2S, PWM, WDT
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| BCR 151T E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.05A SC75
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 120 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: PG-SC75-3D
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.05A SC75
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 120 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: PG-SC75-3D
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 15000 шт
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| BCR 153L3 E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 250MW TSLP-3
Description: TRANS PREBIAS PNP 250MW TSLP-3
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| BCR 151F E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 250MW TSFP-3
Description: TRANS PREBIAS PNP 250MW TSFP-3
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| BCR 151L3 E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 120 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: PG-TSLP-3-4
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V TSLP-3
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 120 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: PG-TSLP-3-4
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
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од. на суму грн.
| BCR 191L3 E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 30000 шт
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| PTFA092213ELV4T400XWSA1 |
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Виробник: Infineon Technologies
Description: IC RF FET LDMOS H-33288-6
Description: IC RF FET LDMOS H-33288-6
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| BSO612CVG |
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Виробник: Infineon Technologies
Description: BSO612 - 20V-60V COMPLEMENTARY M
Description: BSO612 - 20V-60V COMPLEMENTARY M
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