Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123015) > Сторінка 481 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IPP65R065C7 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R225C7 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R420CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4.5V @ 340µA Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R280C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO220-3Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R660CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 6A TO220-3Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 62.5W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R280E6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R075CFD7AAKSA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS PG-TO220-3Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4.5V @ 820µA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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BSS670S2LH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 55V 540MA SOT23Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Packaging: Tape & Reel (TR) |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BSS670S2LH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 55V 540MA SOT23Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Packaging: Cut Tape (CT) |
на замовлення 35634 шт: термін постачання 21-31 дні (днів) |
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SAF-XC878-16FFI 5V AA | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 64LQFPDigiKey Programmable: Not Verified Number of I/O: 40 Supplier Device Package: PG-LQFP-64-4 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: SPI, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 3.25K x 8 Program Memory Size: 64KB (64K x 8) Speed: 27MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1900 шт В кошику од. на суму грн. | ||||||||||||||
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IPB90N06S404ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRF7379QTR | Infineon Technologies |
Description: AUIRF7379Q - 30V-55V DUAL N ANDPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TD160N18SOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 275A MODULEVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 275 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 160 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Current - Gate Trigger (Igt) (Max): 145 mA Current - Hold (Ih) (Max): 200 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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T1960N18TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 4100A TO-200ADVoltage - Off State: 2.2 kV Current - On State (It (RMS)) (Max): 4100 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 1960 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz Current - Gate Trigger (Igt) (Max): 300 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AD Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DD260N18KHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 1800V 260A MODCurrent - Reverse Leakage @ Vr: 30 mA @ 1800 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Voltage - DC Reverse (Vr) (Max): 1800 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io) (per Diode): 260A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DD260N18KKHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 1800V 260A MODCurrent - Reverse Leakage @ Vr: 30 mA @ 1800 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Voltage - DC Reverse (Vr) (Max): 1800 V Operating Temperature - Junction: 150°C Supplier Device Package: Module Current - Average Rectified (Io) (per Diode): 260A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PEB8090FV1.1 | Infineon Technologies |
Description: NETWORK TERMINATION CONTROLLERPackaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: Network Controller Interface: ISDN Supplier Device Package: P-MQFP-64 Part Status: Active Number of Circuits: 1 |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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TLE8250GVIOXUMA5 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 DSO-8Part Status: Active Duplex: Half Receiver Hysteresis: 200 mV Supplier Device Package: PG-DSO-8-16 Protocol: CANbus Data Rate: 1MBd Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE8250GVIOXUMA5 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 DSO-8Part Status: Active Duplex: Half Receiver Hysteresis: 200 mV Supplier Device Package: PG-DSO-8-16 Protocol: CANbus Data Rate: 1MBd Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2410 шт: термін постачання 21-31 дні (днів) |
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TLE7250GVIOXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO8Duplex: Half Receiver Hysteresis: 100 mV Supplier Device Package: PG-DSO-8 Protocol: CANbus Data Rate: 1Mbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.75V ~ 5.25V Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE7250GVIOXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO8Duplex: Half Receiver Hysteresis: 100 mV Supplier Device Package: PG-DSO-8 Protocol: CANbus Data Rate: 1Mbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.75V ~ 5.25V Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SLB9635TT12FW317NOXUMA1 | Infineon Technologies |
Description: SECURITY IC'S/AUTHENTICATION IC'DigiKey Programmable: Not Verified Number of I/O: 2 Part Status: Not For New Designs Supplier Device Package: 28-TSSOP Core Processor: 16-Bit Applications: Trusted Platform Module (TPM) Voltage - Supply: 3.3V Operating Temperature: 0°C ~ 70°C Interface: LPC Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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IDH10S120AKSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 1200V 10A TO220-2 |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IDH10S120AKSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 1200V 10A TO220-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BBY66-05WH6327 | Infineon Technologies | Description: VARIABLE CAPACITANCE DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BBY 66-02V E6327 | Infineon Technologies |
Description: DIODE TUNING 12V 50MA SC-79 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BBY 66-05 E6327 | Infineon Technologies |
Description: DIODE TUNING 12V 50MA SOT-23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PXE1610CDNG003XTMA1 | Infineon Technologies |
Description: PRIMARION CONTROLLERSupplier Device Package: 48-VQFN (6x6) Applications: Controller, Intel VR12.5 Operating Temperature: -5°C ~ 85°C (TA) Voltage - Input: 3V ~ 3.6V Number of Outputs: 6 Mounting Type: Surface Mount Voltage - Output: Programmable Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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PXE1610CDNG003XTMA1 | Infineon Technologies |
Description: PRIMARION CONTROLLERSupplier Device Package: 48-VQFN (6x6) Applications: Controller, Intel VR12.5 Operating Temperature: -5°C ~ 85°C (TA) Voltage - Input: 3V ~ 3.6V Number of Outputs: 6 Mounting Type: Surface Mount Voltage - Output: Programmable Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3422 шт: термін постачання 21-31 дні (днів) |
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S29GL256S10DHIV10 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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XDPP1100Q024XUMA1 | Infineon Technologies |
Description: CONTROLLERNumber of Outputs: 6 Part Status: Active Clock Sync: Yes Output Phases: 1 Serial Interfaces: PMBus Control Features: Enable, Frequency Control, Power Good, Soft Start, Watchdog Synchronous Rectifier: Yes Supplier Device Package: PG-VQFN-24-20 Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Topology: Buck, Boost, Buck-Boost, Full-Bridge, Half-Bridge Frequency - Switching: Up to 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Function: Step-Up/Step-Down Mounting Type: Surface Mount Output Type: PWM Package / Case: 24-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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1EDI10I12MFXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GATE DVR DSO8-51Voltage - Output Supply: 13V ~ 18V Number of Channels: 1 Rise / Fall Time (Typ): 9ns, 6ns Supplier Device Package: PG-DSO-8-51 Technology: Magnetic Coupling Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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1EDI10I12MFXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GATE DVR DSO8-51Voltage - Output Supply: 13V ~ 18V Number of Channels: 1 Rise / Fall Time (Typ): 9ns, 6ns Supplier Device Package: PG-DSO-8-51 Technology: Magnetic Coupling Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1ED020I12FTXUMA1 | Infineon Technologies |
Description: DGT ISO 4.5KV 1CH GT DVR DSO16Voltage - Output Supply: 4.5V ~ 5.5V Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 30ns, 20ns Supplier Device Package: PG-DSO-16-15 Voltage - Isolation: 4500Vrms Current - Output High, Low: 2A, 2A Technology: Magnetic Coupling Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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1ED020I12FTXUMA1 | Infineon Technologies |
Description: DGT ISO 4.5KV 1CH GT DVR DSO16Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Voltage - Output Supply: 4.5V ~ 5.5V Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 30ns, 20ns Supplier Device Package: PG-DSO-16-15 Voltage - Isolation: 4500Vrms Current - Output High, Low: 2A, 2A Technology: Magnetic Coupling Operating Temperature: -40°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ETD420N22P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 700A MODULECurrent - Hold (Ih) (Max): 300 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Voltage - Off State: 2.2 kV Current - On State (It (RMS)) (Max): 700 A Part Status: Obsolete Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 427 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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| T640N12TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1250A DO200AAVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 1250 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 644 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Packaging: Bulk |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BSC240N12NS3 G | Infineon Technologies |
Description: MOSFET N-CH 120V 37A TDSON-8-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC240N12NS3 G | Infineon Technologies |
Description: MOSFET N-CH 120V 37A TDSON-8-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUC60N10S5L110ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8-33 Vgs(th) (Max) @ Id: 2.2V @ 30µA Power Dissipation (Max): 88W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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TLS208D1LDVXUMA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 800MA TSON-10Qualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 250 µA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 1.2V @ 800mA PSRR: 62dB (10kHz) Part Status: Obsolete Control Features: Enable, Reset Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 5.25V Supplier Device Package: PG-TSON-10 Number of Regulators: 1 Voltage - Input (Max): 18V Current - Quiescent (Iq): 170 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 800mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 10-TFDFN Exposed Pad Packaging: Bulk |
на замовлення 6090 шт: термін постачання 21-31 дні (днів) |
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XDPE12284C0000XUMA1 | Infineon Technologies |
Description: IC REG 2OUT 40QFNPackaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Voltage - Output: 0.2V ~ 3.04V Mounting Type: Surface Mount Number of Outputs: 2 - Dual Voltage - Input: 12V Applications: Digital Multi-phase Controller Supplier Device Package: 40-QFN (5x5) Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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XDPE12284C0000XUMA1 | Infineon Technologies |
Description: IC REG 2OUT 40QFNPackaging: Cut Tape (CT) Package / Case: 40-UFQFN Exposed Pad Voltage - Output: 0.2V ~ 3.04V Mounting Type: Surface Mount Number of Outputs: 2 - Dual Voltage - Input: 12V Applications: Digital Multi-phase Controller Supplier Device Package: 40-QFN (5x5) Part Status: Active |
на замовлення 7959 шт: термін постачання 21-31 дні (днів) |
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FS225R17KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 340A 1500WInput Capacitance (Cies) @ Vce: 18.5 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 1500 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 340 A IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A Operating Temperature: -40°C ~ 150°C Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FS225R17KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 340A 1500WMounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 1500 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 340 A IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A Operating Temperature: -40°C ~ 150°C Configuration: Three Phase Inverter Input: Standard |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||
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ISP20EP10LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 78µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ISP20EP10LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 78µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V |
на замовлення 2615 шт: термін постачання 21-31 дні (днів) |
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CY2545QC022 | Infineon Technologies |
Description: IC FANOUT DIST 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Output: Clock Frequency - Max: 166MHz Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.25V ~ 3.6V Ratio - Input:Output: 2:8 Differential - Input:Output: No/No Supplier Device Package: 24-QFN (4x4) PLL: Yes with Bypass Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 4 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 980 шт В кошику од. на суму грн. | ||||||||||||||
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CY2545QC022 | Infineon Technologies |
Description: IC FANOUT DIST 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Output: Clock Frequency - Max: 166MHz Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.25V ~ 3.6V Ratio - Input:Output: 2:8 Differential - Input:Output: No/No Supplier Device Package: 24-QFN (4x4) PLL: Yes with Bypass Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 4 DigiKey Programmable: Not Verified |
на замовлення 930 шт: термін постачання 21-31 дні (днів) |
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CY7C1568XV18-633BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAMemory Organization: 4M x 18 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 633 MHz Technology: SRAM - Synchronous, DDR II+ DigiKey Programmable: Not Verified Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Bulk |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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CY7C1568KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGADigiKey Programmable: Not Verified Memory Organization: 4M x 18 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 400 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CY7C1568XV18-600BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGA |
на замовлення 271 шт: термін постачання 21-31 дні (днів) |
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CY7C1568KV18-400BZC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGADigiKey Programmable: Not Verified Memory Organization: 4M x 18 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 400 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Bulk |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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CY7C1568KV18-450BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
на замовлення 132 шт: термін постачання 21-31 дні (днів) |
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CY7C1565XV18-633BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 633 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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FF200R12MT4BOMA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 1050WConfiguration: 2 Independent Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 14 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 1050 W Voltage - Collector Emitter Breakdown (Max): 1200 V IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A Operating Temperature: -40°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FD1200R17KE3KNOSA1 | Infineon Technologies |
Description: FD1200R17K - IGBT MODULE |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BSC0805LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 79A TDSON-8-6Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 49µA Supplier Device Package: PG-TDSON-8-6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC0804LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 40A TDSON-8-6Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TDSON-8-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC0804LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 40A TDSON-8-6Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TDSON-8-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IPP65R065C7 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Description: POWER FIELD-EFFECT TRANSISTOR, 3
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R225C7 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Description: POWER FIELD-EFFECT TRANSISTOR, 1
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R420CFDXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 8.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R280C6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R660CFDXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 62.5W (Tc)
Description: MOSFET N-CH 650V 6A TO220-3
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 62.5W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R280E6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 13.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R075CFD7AAKSA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BSS670S2LH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 540MA SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 4.03 грн |
| 20000+ | 3.54 грн |
| BSS670S2LH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 540MA SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Cut Tape (CT)
на замовлення 35634 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.25 грн |
| 23+ | 13.51 грн |
| 100+ | 8.45 грн |
| 500+ | 5.87 грн |
| 1000+ | 5.20 грн |
| 2000+ | 4.63 грн |
| 5000+ | 3.95 грн |
| SAF-XC878-16FFI 5V AA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 40
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 40
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1900 шт
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| IPB90N06S404ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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| AUIRF7379QTR |
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Виробник: Infineon Technologies
Description: AUIRF7379Q - 30V-55V DUAL N AND
Packaging: Bulk
Part Status: Active
Description: AUIRF7379Q - 30V-55V DUAL N AND
Packaging: Bulk
Part Status: Active
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| TD160N18SOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 275A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 275 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 160 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.8KV 275A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 275 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 160 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| T1960N18TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 4100A TO-200AD
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1960 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
Description: SCR MODULE 2.2KV 4100A TO-200AD
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1960 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
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| DD260N18KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 1800V 260A MOD
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 260A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: DIODE MOD GP 1800V 260A MOD
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 260A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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| DD260N18KKHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 1800V 260A MOD
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 260A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: DIODE MOD GP 1800V 260A MOD
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 260A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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| PEB8090FV1.1 |
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Виробник: Infineon Technologies
Description: NETWORK TERMINATION CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Network Controller
Interface: ISDN
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
Description: NETWORK TERMINATION CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Network Controller
Interface: ISDN
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 781.11 грн |
| TLE8250GVIOXUMA5 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Part Status: Active
Duplex: Half
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Part Status: Active
Duplex: Half
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| TLE8250GVIOXUMA5 |
![]() |
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Part Status: Active
Duplex: Half
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Part Status: Active
Duplex: Half
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-DSO-8-16
Protocol: CANbus
Data Rate: 1MBd
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.21 грн |
| 10+ | 106.11 грн |
| 25+ | 95.48 грн |
| 100+ | 78.56 грн |
| 250+ | 73.29 грн |
| 500+ | 70.12 грн |
| 1000+ | 66.39 грн |
| TLE7250GVIOXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Duplex: Half
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Duplex: Half
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| TLE7250GVIOXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Duplex: Half
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Duplex: Half
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| SLB9635TT12FW317NOXUMA1 |
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Виробник: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
DigiKey Programmable: Not Verified
Number of I/O: 2
Part Status: Not For New Designs
Supplier Device Package: 28-TSSOP
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: LPC
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: SECURITY IC'S/AUTHENTICATION IC'
DigiKey Programmable: Not Verified
Number of I/O: 2
Part Status: Not For New Designs
Supplier Device Package: 28-TSSOP
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: LPC
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| IDH10S120AKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 1200V 10A TO220-2
Description: DIODE SCHOTTKY 1200V 10A TO220-2
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 884.43 грн |
| 70+ | 818.14 грн |
| 200+ | 783.92 грн |
| 400+ | 707.21 грн |
| IDH10S120AKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 1200V 10A TO220-2
Description: DIODE SCHOTTKY 1200V 10A TO220-2
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| BBY66-05WH6327 |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Description: VARIABLE CAPACITANCE DIODE
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| BBY 66-02V E6327 |
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Виробник: Infineon Technologies
Description: DIODE TUNING 12V 50MA SC-79
Description: DIODE TUNING 12V 50MA SC-79
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| BBY 66-05 E6327 |
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Виробник: Infineon Technologies
Description: DIODE TUNING 12V 50MA SOT-23
Description: DIODE TUNING 12V 50MA SOT-23
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| PXE1610CDNG003XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: PRIMARION CONTROLLER
Supplier Device Package: 48-VQFN (6x6)
Applications: Controller, Intel VR12.5
Operating Temperature: -5°C ~ 85°C (TA)
Voltage - Input: 3V ~ 3.6V
Number of Outputs: 6
Mounting Type: Surface Mount
Voltage - Output: Programmable
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: PRIMARION CONTROLLER
Supplier Device Package: 48-VQFN (6x6)
Applications: Controller, Intel VR12.5
Operating Temperature: -5°C ~ 85°C (TA)
Voltage - Input: 3V ~ 3.6V
Number of Outputs: 6
Mounting Type: Surface Mount
Voltage - Output: Programmable
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| PXE1610CDNG003XTMA1 |
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Виробник: Infineon Technologies
Description: PRIMARION CONTROLLER
Supplier Device Package: 48-VQFN (6x6)
Applications: Controller, Intel VR12.5
Operating Temperature: -5°C ~ 85°C (TA)
Voltage - Input: 3V ~ 3.6V
Number of Outputs: 6
Mounting Type: Surface Mount
Voltage - Output: Programmable
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: PRIMARION CONTROLLER
Supplier Device Package: 48-VQFN (6x6)
Applications: Controller, Intel VR12.5
Operating Temperature: -5°C ~ 85°C (TA)
Voltage - Input: 3V ~ 3.6V
Number of Outputs: 6
Mounting Type: Surface Mount
Voltage - Output: Programmable
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 364.21 грн |
| 10+ | 268.11 грн |
| 25+ | 247.41 грн |
| 100+ | 210.84 грн |
| 250+ | 200.66 грн |
| 500+ | 194.53 грн |
| 1000+ | 186.38 грн |
| S29GL256S10DHIV10 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 750.89 грн |
| 10+ | 672.03 грн |
| 25+ | 651.44 грн |
| 50+ | 596.73 грн |
| 100+ | 582.20 грн |
| 260+ | 562.40 грн |
| XDPP1100Q024XUMA1 |
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Виробник: Infineon Technologies
Description: CONTROLLER
Number of Outputs: 6
Part Status: Active
Clock Sync: Yes
Output Phases: 1
Serial Interfaces: PMBus
Control Features: Enable, Frequency Control, Power Good, Soft Start, Watchdog
Synchronous Rectifier: Yes
Supplier Device Package: PG-VQFN-24-20
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Topology: Buck, Boost, Buck-Boost, Full-Bridge, Half-Bridge
Frequency - Switching: Up to 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: CONTROLLER
Number of Outputs: 6
Part Status: Active
Clock Sync: Yes
Output Phases: 1
Serial Interfaces: PMBus
Control Features: Enable, Frequency Control, Power Good, Soft Start, Watchdog
Synchronous Rectifier: Yes
Supplier Device Package: PG-VQFN-24-20
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Topology: Buck, Boost, Buck-Boost, Full-Bridge, Half-Bridge
Frequency - Switching: Up to 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| 1EDI10I12MFXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Voltage - Output Supply: 13V ~ 18V
Number of Channels: 1
Rise / Fall Time (Typ): 9ns, 6ns
Supplier Device Package: PG-DSO-8-51
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Voltage - Output Supply: 13V ~ 18V
Number of Channels: 1
Rise / Fall Time (Typ): 9ns, 6ns
Supplier Device Package: PG-DSO-8-51
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| 1EDI10I12MFXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Voltage - Output Supply: 13V ~ 18V
Number of Channels: 1
Rise / Fall Time (Typ): 9ns, 6ns
Supplier Device Package: PG-DSO-8-51
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Voltage - Output Supply: 13V ~ 18V
Number of Channels: 1
Rise / Fall Time (Typ): 9ns, 6ns
Supplier Device Package: PG-DSO-8-51
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| 1ED020I12FTXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Voltage - Output Supply: 4.5V ~ 5.5V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: PG-DSO-16-15
Voltage - Isolation: 4500Vrms
Current - Output High, Low: 2A, 2A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Voltage - Output Supply: 4.5V ~ 5.5V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: PG-DSO-16-15
Voltage - Isolation: 4500Vrms
Current - Output High, Low: 2A, 2A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| 1ED020I12FTXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 4.5V ~ 5.5V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: PG-DSO-16-15
Voltage - Isolation: 4500Vrms
Current - Output High, Low: 2A, 2A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 4.5V ~ 5.5V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: PG-DSO-16-15
Voltage - Isolation: 4500Vrms
Current - Output High, Low: 2A, 2A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
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| ETD420N22P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Description: SCR MODULE 2.2KV 700A MODULE
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 12563.58 грн |
| T640N12TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 644 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Bulk
Description: SCR MODULE 1800V 1250A DO200AA
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 644 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Bulk
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 9423.91 грн |
| BSC240N12NS3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 37A TDSON-8-1
Description: MOSFET N-CH 120V 37A TDSON-8-1
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| BSC240N12NS3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 37A TDSON-8-1
Description: MOSFET N-CH 120V 37A TDSON-8-1
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| IAUC60N10S5L110ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-33
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Power Dissipation (Max): 88W (Tc)
Description: MOSFET_(75V 120V( PG-TDSON-8
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-33
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Power Dissipation (Max): 88W (Tc)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| TLS208D1LDVXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 800MA TSON-10
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 250 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.2V @ 800mA
PSRR: 62dB (10kHz)
Part Status: Obsolete
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5.25V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 170 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-TFDFN Exposed Pad
Packaging: Bulk
Description: IC REG LIN POS ADJ 800MA TSON-10
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 250 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.2V @ 800mA
PSRR: 62dB (10kHz)
Part Status: Obsolete
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5.25V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 170 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-TFDFN Exposed Pad
Packaging: Bulk
на замовлення 6090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 211+ | 97.13 грн |
| XDPE12284C0000XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2 - Dual
Voltage - Input: 12V
Applications: Digital Multi-phase Controller
Supplier Device Package: 40-QFN (5x5)
Part Status: Active
Description: IC REG 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2 - Dual
Voltage - Input: 12V
Applications: Digital Multi-phase Controller
Supplier Device Package: 40-QFN (5x5)
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 212.92 грн |
| XDPE12284C0000XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG 2OUT 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2 - Dual
Voltage - Input: 12V
Applications: Digital Multi-phase Controller
Supplier Device Package: 40-QFN (5x5)
Part Status: Active
Description: IC REG 2OUT 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2 - Dual
Voltage - Input: 12V
Applications: Digital Multi-phase Controller
Supplier Device Package: 40-QFN (5x5)
Part Status: Active
на замовлення 7959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 383.58 грн |
| 10+ | 282.96 грн |
| 25+ | 261.23 грн |
| 100+ | 222.78 грн |
| 250+ | 214.00 грн |
| FS225R17KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 340A 1500W
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1500 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 340 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1700V 340A 1500W
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1500 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 340 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 49795.57 грн |
| FS225R17KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 340A 1500W
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1500 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 340 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Description: IGBT MOD 1700V 340A 1500W
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1500 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 340 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
товару немає в наявності
Мінімальне замовлення: 4 шт
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| ISP20EP10LMXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 78µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 78µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 8.65 грн |
| 2000+ | 8.01 грн |
| ISP20EP10LMXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 78µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 78µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 23+ | 13.06 грн |
| 26+ | 11.61 грн |
| 100+ | 9.36 грн |
| 250+ | 8.62 грн |
| 500+ | 8.18 грн |
| CY2545QC022 |
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Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 980 шт
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| CY2545QC022 |
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Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.68 грн |
| 10+ | 149.76 грн |
| 25+ | 137.30 грн |
| 100+ | 115.93 грн |
| 490+ | 106.16 грн |
| CY7C1568XV18-633BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, DDR II+
DigiKey Programmable: Not Verified
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 633 MHz
Technology: SRAM - Synchronous, DDR II+
DigiKey Programmable: Not Verified
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 33850.29 грн |
| CY7C1568KV18-400BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5214.35 грн |
| CY7C1568XV18-600BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 31094.72 грн |
| CY7C1568KV18-400BZC |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 14490.00 грн |
| CY7C1568KV18-450BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4764.91 грн |
| 10+ | 4236.89 грн |
| 25+ | 4098.92 грн |
| 50+ | 3750.15 грн |
| CY7C1565XV18-633BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 34288.89 грн |
| FF200R12MT4BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C
Description: IGBT MODULE 1200V 1050W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C
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В кошику
од. на суму грн.
| FD1200R17KE3KNOSA1 |
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Виробник: Infineon Technologies
Description: FD1200R17K - IGBT MODULE
Description: FD1200R17K - IGBT MODULE
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 81802.35 грн |
| BSC0805LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
товару немає в наявності
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од. на суму грн.
| BSC0804LSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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од. на суму грн.
| BSC0804LSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.


































