| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFQ28N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 695W Case: TO3P On-state resistance: 0.26Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MCMA110P1200TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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OMA160S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 125µs Turn-on time: 125µs Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| OMA160STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 125µs Turn-on time: 125µs Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| CPC1393GRTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Kind of output: MOSFET Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA Max. operating current: 90mA On-state resistance: 50Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 5kV Type of relay: solid state Manufacturer series: OptoMOS Contacts configuration: SPST-NO Body dimensions: 4.57x6.35x3.3mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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LAA100 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 120mA Control current max.: 50mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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LAA100L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 120mA Control current max.: 50mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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LCA100 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: THT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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LCA100L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: THT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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LCA100S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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LCA100LS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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LAA100S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 120mA Control current max.: 50mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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DSEI60-02A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 69A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 540A Case: TO247-2 Max. forward voltage: 0.88V Power dissipation: 150W Reverse recovery time: 35ns Technology: FRED |
на замовлення 252 шт: термін постачання 21-30 дні (днів) |
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DSEI120-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W Power dissipation: 357W Case: TO247-2 Mounting: THT Kind of package: tube Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 40ns Max. forward voltage: 1.55V Max. forward impulse current: 540A Load current: 109A Max. off-state voltage: 1.2kV Technology: FRED Semiconductor structure: single diode |
на замовлення 244 шт: термін постачання 21-30 дні (днів) |
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DSEI120-12AZ-TUB | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V Power dissipation: 357W Case: TO268AAHV Mounting: SMD Kind of package: tube Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 40ns Max. forward voltage: 1.55V Max. forward impulse current: 540A Load current: 109A Max. off-state voltage: 1.2kV Technology: FRED Semiconductor structure: single diode |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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DSEI2X61-10B | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 2.3V Max. load current: 60A Max. forward impulse current: 540A Load current: 60A x2 Max. off-state voltage: 1kV Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFK120N30P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Kind of package: tube Polarisation: unipolar Gate charge: 150nC On-state resistance: 27mΩ Drain current: 120A Drain-source voltage: 300V Power dissipation: 1.13kW Case: TO264 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFK120N25P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264 Kind of package: tube Polarisation: unipolar Gate charge: 185nC On-state resistance: 24mΩ Drain current: 120A Drain-source voltage: 250V Power dissipation: 700W Case: TO264 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXYR100N120C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™ Mounting: THT Turn-on time: 143ns Gate charge: 260nC Turn-off time: 271ns Case: PLUS247™ Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 56A Technology: GenX3™; Planar; XPT™ Pulsed collector current: 450A Power dissipation: 484W Kind of package: tube Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MCMA140PD1200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Case: TO240AA Mechanical mounting: screw Gate current: 150/200mA Max. forward voltage: 1.28V Threshold on-voltage: 0.85V Load current: 140A Max. forward impulse current: 2.4kA Max. off-state voltage: 1.2kV Max. load current: 220A Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCMA1400E1600CD | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 1.1kA Case: ComPack Max. forward voltage: 1.43V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 600/800mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCMA140P1800TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 140A Case: TO240AA Max. forward voltage: 1.7V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDMA1400C1600CC | IXYS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 700A x2 Case: ComPack Max. forward voltage: 1.05V Max. forward impulse current: 20kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCMA140P1200TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.7V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCMA140P1400TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 140A Case: TO240AA Max. forward voltage: 1.7V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCMA140P1600TA-NI | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 140A Case: TO240AA Max. forward voltage: 1.28V Max. forward impulse current: 2.04kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA Max. load current: 220A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDMA140P1200TG | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDMA140P1600TG | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.38kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 140A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDMA140P1800TG | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXTA24N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO263 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTH24N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Technology: X2-Class Reverse recovery time: 390ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTY18P10T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Reverse recovery time: 62ns |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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IXTA18P10T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Reverse recovery time: 62ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFK420N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264 Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Reverse recovery time: 140ns Gate charge: 670nC On-state resistance: 2.6mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 420A Power dissipation: 1.67kW Kind of channel: enhancement Case: TO264 Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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CPC1301GRTR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-8000%@1mA Collector-emitter voltage: 350V Turn-on time: 1µs Turn-off time: 60µs Slew rate: 0.25V/μs Max. off-state voltage: 5V Trigger current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFH18N100Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3 Mounting: THT Drain-source voltage: 1kV Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate charge: 90nC On-state resistance: 0.66Ω Drain current: 18A Power dissipation: 830W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFT18N100Q3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268 Mounting: SMD Drain-source voltage: 1kV Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO268 Kind of package: tube Polarisation: unipolar Gate charge: 90nC On-state resistance: 0.66Ω Drain current: 18A Power dissipation: 830W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1014NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1020NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Switched voltage: max. 30V AC; max. 30V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 1.2A On-state resistance: 0.25Ω Relay variant: current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1025NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1019NTR | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms Switched voltage: max. 60V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 750mA On-state resistance: 0.6Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1006NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Switched voltage: max. 60V AC; max. 60V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 10ms Turn-off time: 10ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 75mA On-state resistance: 10Ω Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1010N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 0.17A On-state resistance: 11.5Ω Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1004NTR | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV Switched voltage: max. 100V DC Operating temperature: -40...110°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 3ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 4Ω Relay variant: current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1010NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 0.17A On-state resistance: 11.5Ω Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1016NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC Switched voltage: max. 100V AC; max. 100V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 2ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 0.1A On-state resistance: 16Ω Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXA12IF1200HB | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 13A Power dissipation: 85W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 27nC Kind of package: tube Turn-off time: 350ns Technology: Planar; Sonic FRD™; XPT™ Turn-on time: 110ns |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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IXA37IF1200HJ | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 37A Power dissipation: 195W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-off time: 350ns Technology: Planar; Sonic FRD™; XPT™ Turn-on time: 110ns |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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IXA30RG1200DHGLB | IXYS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Technology: ISOPLUS™; Sonic FRD™ Power dissipation: 147W |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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DHG10I1200PA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W Power dissipation: 85W Case: TO220AC Mounting: THT Kind of package: tube Features of semiconductor devices: fast switching Reverse recovery time: 200ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 2.23V Load current: 10A Max. forward impulse current: 60A Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: Sonic FRD™ Type of diode: rectifying |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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IXFB300N10P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™ Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 279nC Reverse recovery time: 200ns On-state resistance: 5.5mΩ Drain current: 300A Gate-source voltage: ±20V Power dissipation: 1.5kW Drain-source voltage: 100V Kind of channel: enhancement Technology: HiPerFET™; Polar™ Case: PLUS264™ |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| VMM300-03F | IXYS |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA Case: Y3-DCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Topology: MOSFET half-bridge Polarisation: unipolar Technology: HiPerFET™ Drain-source voltage: 300V Gate-source voltage: ±20V Type of semiconductor module: MOSFET transistor Drain current: 220A Pulsed drain current: 1.16kA On-state resistance: 7.4mΩ Power dissipation: 1.5kW Electrical mounting: FASTON connectors; screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXFN300N10P | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A Case: SOT227B Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain-source voltage: 100V Gate-source voltage: ±30V Type of semiconductor module: MOSFET transistor Drain current: 295A Pulsed drain current: 900A Gate charge: 279nC Kind of channel: enhancement Reverse recovery time: 200ns On-state resistance: 5.5mΩ Power dissipation: 1.07kW Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFN300N20X3 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A Case: SOT227B Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Gate-source voltage: ±30V Type of semiconductor module: MOSFET transistor Drain current: 300A Pulsed drain current: 700A Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 172ns On-state resistance: 3.5mΩ Power dissipation: 695W Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CLA60PD1200NA | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw Kind of package: bulk Case: SOT227B Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Gate current: 40/80mA Threshold on-voltage: 0.79V Max. forward voltage: 1.09V Load current: 60A Max. load current: 94A Max. forward impulse current: 935A Max. off-state voltage: 1.2kV |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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CLA110MB1200NA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V Kind of package: bulk Semiconductor structure: opposing Electrical mounting: screw Mechanical mounting: screw Case: SOT227B Type of semiconductor module: thyristor Gate current: 40/80mA Max. forward voltage: 1.04V Load current: 50A Max. forward impulse current: 935A Max. off-state voltage: 1.2kV |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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IXGN200N60B3 | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mechanical mounting: screw Technology: GenX3™; PT Power dissipation: 830W |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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DSEP2X91-03A | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 90A x2 Case: SOT227B Max. forward voltage: 1.54V Max. forward impulse current: 1kA Electrical mounting: screw Max. load current: 90A Mechanical mounting: screw Technology: HiPerFRED™ |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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DSEP2X61-03A | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 60A x2 Case: SOT227B Max. forward voltage: 1.11V Max. forward impulse current: 0.6kA Electrical mounting: screw Max. load current: 60A Mechanical mounting: screw Technology: HiPerFRED™ |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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DPF240X200NA | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Max. forward voltage: 1.06V Max. load current: 120A Load current: 120A x2 Max. off-state voltage: 200V Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Case: SOT227B Semiconductor structure: double independent Type of semiconductor module: diode |
на замовлення 56 шт: термін постачання 21-30 дні (днів) |
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| IXFQ28N60P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MCMA110P1200TA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| OMA160S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
товару немає в наявності
В кошику
од. на суму грн.
| OMA160STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
товару немає в наявності
В кошику
од. на суму грн.
| CPC1393GRTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
товару немає в наявності
В кошику
од. на суму грн.
| LAA100 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 371.84 грн |
| 10+ | 301.82 грн |
| 250+ | 243.87 грн |
| LAA100L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 303.37 грн |
| 50+ | 242.26 грн |
| LCA100 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 299.03 грн |
| 50+ | 181.90 грн |
| 250+ | 145.68 грн |
| LCA100L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.30 грн |
| 50+ | 188.34 грн |
| 250+ | 152.12 грн |
| LCA100S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 208.02 грн |
| 50+ | 177.07 грн |
| LCA100LS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.23 грн |
| 10+ | 169.02 грн |
| LAA100S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 498.39 грн |
| 50+ | 303.43 грн |
| DSEI60-02A | ![]() |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 252 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 450.72 грн |
| 3+ | 397.60 грн |
| 10+ | 345.28 грн |
| 30+ | 317.92 грн |
| DSEI120-12A | ![]() |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 244 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 819.96 грн |
| 5+ | 704.25 грн |
| DSEI120-12AZ-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 936.11 грн |
| 3+ | 798.41 грн |
| 10+ | 708.27 грн |
| DSEI2X61-10B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. load current: 60A
Max. forward impulse current: 540A
Load current: 60A x2
Max. off-state voltage: 1kV
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. load current: 60A
Max. forward impulse current: 540A
Load current: 60A x2
Max. off-state voltage: 1kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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| IXFK120N30P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| IXFK120N25P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| IXYR100N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
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| MCMA140PD1200TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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| MCMA1400E1600CD |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
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| MCMA140P1800TA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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| MDMA1400C1600CC |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
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| MCMA140P1200TA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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| MCMA140P1400TA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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| MCMA140P1600TA-NI |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
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| MDMA140P1200TG |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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| MDMA140P1600TG |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
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| MDMA140P1800TG |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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| IXTA24N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
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| IXTH24N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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| IXTY18P10T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.57 грн |
| 10+ | 160.17 грн |
| IXTA18P10T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
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| IXFK420N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1222.14 грн |
| 5+ | 966.63 грн |
| CPC1301GRTR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
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| IXFH18N100Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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| IXFT18N100Q3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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| CPC1014NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| CPC1020NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
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| CPC1025NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| CPC1019NTR |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
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| CPC1006NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Relay variant: 1-phase; current source
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| CPC1010N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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| CPC1004NTR |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Relay variant: current source
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Relay variant: current source
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| CPC1010NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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| CPC1016NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Relay variant: 1-phase; current source
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| IXA12IF1200HB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 348.44 грн |
| 10+ | 266.41 грн |
| 30+ | 228.58 грн |
| 120+ | 201.21 грн |
| IXA37IF1200HJ |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1724.00 грн |
| 3+ | 1434.25 грн |
| 10+ | 1267.64 грн |
| 30+ | 1137.26 грн |
| IXA30RG1200DHGLB |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 462.85 грн |
| DHG10I1200PA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Power dissipation: 85W
Case: TO220AC
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.23V
Load current: 10A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: Sonic FRD™
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Power dissipation: 85W
Case: TO220AC
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.23V
Load current: 10A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: Sonic FRD™
Type of diode: rectifying
на замовлення 158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 162.08 грн |
| 5+ | 115.90 грн |
| 10+ | 98.19 грн |
| 25+ | 90.95 грн |
| IXFB300N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2232.79 грн |
| VMM300-03F |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Polarisation: unipolar
Technology: HiPerFET™
Drain-source voltage: 300V
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
Drain current: 220A
Pulsed drain current: 1.16kA
On-state resistance: 7.4mΩ
Power dissipation: 1.5kW
Electrical mounting: FASTON connectors; screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Polarisation: unipolar
Technology: HiPerFET™
Drain-source voltage: 300V
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
Drain current: 220A
Pulsed drain current: 1.16kA
On-state resistance: 7.4mΩ
Power dissipation: 1.5kW
Electrical mounting: FASTON connectors; screw
товару немає в наявності
В кошику
од. на суму грн.
| IXFN300N10P |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 295A
Pulsed drain current: 900A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.07kW
Electrical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 295A
Pulsed drain current: 900A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.07kW
Electrical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| IXFN300N20X3 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
Pulsed drain current: 700A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
On-state resistance: 3.5mΩ
Power dissipation: 695W
Electrical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
Pulsed drain current: 700A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
On-state resistance: 3.5mΩ
Power dissipation: 695W
Electrical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| CLA60PD1200NA |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1877.41 грн |
| CLA110MB1200NA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
на замовлення 71 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1600.05 грн |
| 5+ | 1360.20 грн |
| IXGN200N60B3 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3744.42 грн |
| 3+ | 3182.39 грн |
| DSEP2X91-03A | ![]() |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 90A
Mechanical mounting: screw
Technology: HiPerFRED™
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 90A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2517.95 грн |
| DSEP2X61-03A | ![]() |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2055.10 грн |
| 3+ | 1901.87 грн |
| DPF240X200NA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
на замовлення 56 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3081.35 грн |
| 3+ | 2549.77 грн |
| 9+ | 2513.56 грн |


























