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CPC1301G CPC1301G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
Case: DIP4
Turn-on time: 1µs
Turn-off time: 60µs
Max. off-state voltage: 5V
Trigger current: 50mA
Slew rate: 0.25V/μs
CTR@If: 1000-8000%@1mA
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
4+107.34 грн
10+65.39 грн
15+62.99 грн
42+59.01 грн
50+58.21 грн
100+57.41 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP2N100P IXTP2N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
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IXFR32N100P IXFR32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BFB820&compId=IXFR32N100P.pdf?ci_sign=286c97be0b3093d0dac3237c4fe3344de0bb073d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFK32N100P IXFK32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFN32N100Q3 IXFN32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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IXTH12N100L IXTH12N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917F1820&compId=IXTH12N100L.pdf?ci_sign=063f94f56b2999358eaa03eb222f63a951994af2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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IXFK32N100Q3 IXFK32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
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IXFK52N100X IXFK52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
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IXFN32N100P IXFN32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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IXFN52N100X IXFN52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXFX32N100P IXFX32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFX32N100Q3 IXFX32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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DSS6-0025BS DSS6-0025BS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAE9537B9338BF&compId=DSS6-0025BS.pdf?ci_sign=c4764c4d2d09aff3e5d75d1005bf3fe019d6e548 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
на замовлення 693 шт:
термін постачання 21-30 дні (днів)
9+52.38 грн
12+35.08 грн
100+30.62 грн
250+28.71 грн
500+27.43 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IXTP02N50D IXTP02N50D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49599820&compId=IXTP02N50D.pdf?ci_sign=7c63629b80656d24b64dc55efa4f5870d4ea98b3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 5ns
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
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IXKH70N60C5 IXKH70N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC74F820&compId=IXKH70N60C5.pdf?ci_sign=4e1286ce35213f63fda6d3c5bff014c2071f69a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5 IXKT70N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284E291BA6C7820&compId=IXKT70N60C5.pdf?ci_sign=eac3ccd80caa6a0c5898799ec7579ba6e8b3237a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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CPC1788J CPC1788J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713 Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+984.95 грн
25+804.56 грн
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PBA150 PBA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PBA150STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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DSEP29-12A DSEP29-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
2+310.86 грн
10+181.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSI30-12A DSI30-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
3+195.79 грн
9+108.44 грн
24+102.86 грн
100+98.88 грн
Мінімальне замовлення: 3
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MDD142-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834FBC6AAC00C4&compId=MDD142-12N1.pdf?ci_sign=e60450221a50dc38006779b9dcd279ebaf641ce1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
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DMA30P1600HR DMA30P1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4530BDDF9C0C4&compId=DMA30P1600HR.pdf?ci_sign=353bf02d8c968b714b88bc63f36a7db07a0987a9 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+685.26 грн
3+456.10 грн
6+431.38 грн
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MCMA140P1600TA MCMA140P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+2793.42 грн
5+2524.52 грн
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IXFH16N60P3 IXFH16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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В кошику  од. на суму  грн.
IXFH120N30X3 IXFH120N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X3-Class
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+1225.39 грн
2+868.35 грн
3+821.31 грн
В кошику  од. на суму  грн.
IXFH120N25T IXFH120N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC061820&compId=IXFH120N25T.pdf?ci_sign=794599a89c83b00c82e6901dab3e03a7b4e0dc23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 108ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+741.93 грн
3+642.69 грн
В кошику  од. на суму  грн.
MDD142-08N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834B88367E20C4&compId=MDD142-08N1.pdf?ci_sign=82f8deb8816351787434df686089668623dcf373 Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXFA8N85XHV IXFA8N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284EDE0DB0C5820&compId=IXFP(Q)8N85X_HV.pdf?ci_sign=a8e6404908a41fd6ea4d855574b806b2f1938c58 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Case: TO263HV
On-state resistance: 0.85Ω
Drain current: 8A
Pulsed drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 200W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Reverse recovery time: 125ns
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+431.08 грн
3+358.82 грн
8+340.48 грн
10+334.90 грн
В кошику  од. на суму  грн.
IXFY4N85X IXFY4N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO252
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
2+330.61 грн
6+161.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA4N85X IXFA4N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO263
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
2+249.89 грн
9+108.44 грн
24+102.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA14N85XHV IXFA14N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Case: TO263HV
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA20N85XHV IXFA20N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7D2BF5BAE38BF&compId=IXFA20N85XHV.pdf?ci_sign=81d9ba09897f60f2974f4faff6b6192eda367229 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Mounting: SMD
Case: TO263
On-state resistance: 0.33Ω
Drain current: 20A
Gate-source voltage: ±30V
Power dissipation: 540W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 63nC
Reverse recovery time: 190ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT40N85XHV IXFT40N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A00561D2379820&compId=IXFT40N85X.PDF?ci_sign=17b8d459553279811895159364e457a57b9a6562 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.145Ω
Drain current: 40A
Power dissipation: 860W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 98nC
Reverse recovery time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYY8N90C3 IXYY8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
2+267.92 грн
25+190.57 грн
70+142.73 грн
140+123.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP8N90C3D1 IXYP8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
2+271.36 грн
3+226.46 грн
10+200.14 грн
50+180.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP8N90C3 IXYP8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
товару немає в наявності
В кошику  од. на суму  грн.
IXYA8N90C3D1 IXYA8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
товару немає в наявності
В кошику  од. на суму  грн.
IXFH18N90P IXFH18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DLA100B1200LB-TUB DLA100B1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1356.78 грн
3+1191.29 грн
20+1174.55 грн
В кошику  од. на суму  грн.
IXTT24P20 IXTT24P20 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA012B7501098BF&compId=IXT_24P20.pdf?ci_sign=7205947c30c99ec8834ade2f2c88d0a2a265662f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.15Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Case: TO268
на замовлення 183 шт:
термін постачання 21-30 дні (днів)
1+839.83 грн
2+593.25 грн
5+560.56 грн
30+539.03 грн
В кошику  од. на суму  грн.
IXFK220N20X3 IXFK220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
1+1277.78 грн
3+1046.17 грн
10+947.29 грн
В кошику  од. на суму  грн.
IXFT220N20X3HV IXFT220N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFH220N20X3 IXFH220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
MEA250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
XAA117S XAA117S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+248.17 грн
50+151.50 грн
250+121.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117P XAA117P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
2+248.17 грн
50+151.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117 XAA117 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
2+248.17 грн
50+151.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
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XAA117STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
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IXGA30N120B3 IXGA30N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
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IXYH30N120C3 IXYH30N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFN30N120P IXFN30N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Electrical mounting: screw
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В кошику  од. на суму  грн.
IXFB30N120P IXFB30N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED471DAC7962A18&compId=IXFB30N120P.pdf?ci_sign=6747945f68e4b9f5a1fcbc7994466499b2c08e0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGT30N120B3D1 IXGT30N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-off time: 471ns
Turn-on time: 56ns
Collector-emitter voltage: 1.2kV
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACAFCD3B665820&compId=IXYH30N120C3D1.pdf?ci_sign=bf46a6df4aae9941a3d72e05b9e26fc24022a6f1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYP30N120C3 IXYP30N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
товару немає в наявності
В кошику  од. на суму  грн.
IXA33IF1200HB IXA33IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DEF404B5D8BF&compId=IXA33IF1200HB.pdf?ci_sign=02e291729e01b364bd485a7eae853dab33af3810 Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Turn-on time: 110ns
Turn-off time: 350ns
товару немає в наявності
В кошику  од. на суму  грн.
LOC111 LOC111 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2 Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
2+234.43 грн
8+130.77 грн
20+123.59 грн
100+122.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1301G pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e
CPC1301G
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
Case: DIP4
Turn-on time: 1µs
Turn-off time: 60µs
Max. off-state voltage: 5V
Trigger current: 50mA
Slew rate: 0.25V/μs
CTR@If: 1000-8000%@1mA
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+107.34 грн
10+65.39 грн
15+62.99 грн
42+59.01 грн
50+58.21 грн
100+57.41 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP2N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895
IXTP2N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
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IXFR32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BFB820&compId=IXFR32N100P.pdf?ci_sign=286c97be0b3093d0dac3237c4fe3344de0bb073d
IXFR32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFK32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c
IXFK32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFN32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225
IXFN32N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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IXTH12N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917F1820&compId=IXTH12N100L.pdf?ci_sign=063f94f56b2999358eaa03eb222f63a951994af2
IXTH12N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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IXFK32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8
IXFK32N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
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IXFK52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca
IXFK52N100X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
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IXFN32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98
IXFN32N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
товару немає в наявності
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IXFN52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910
IXFN52N100X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXFX32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c
IXFX32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFX32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8
IXFX32N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
товару немає в наявності
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DSS6-0025BS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAE9537B9338BF&compId=DSS6-0025BS.pdf?ci_sign=c4764c4d2d09aff3e5d75d1005bf3fe019d6e548
DSS6-0025BS
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
на замовлення 693 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.38 грн
12+35.08 грн
100+30.62 грн
250+28.71 грн
500+27.43 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IXTP02N50D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49599820&compId=IXTP02N50D.pdf?ci_sign=7c63629b80656d24b64dc55efa4f5870d4ea98b3
IXTP02N50D
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 5ns
товару немає в наявності
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IXXH75N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96
IXXH75N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
товару немає в наявності
В кошику  од. на суму  грн.
IXKH70N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC74F820&compId=IXKH70N60C5.pdf?ci_sign=4e1286ce35213f63fda6d3c5bff014c2071f69a7
IXKH70N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284E291BA6C7820&compId=IXKT70N60C5.pdf?ci_sign=eac3ccd80caa6a0c5898799ec7579ba6e8b3237a
IXKT70N60C5
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
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CPC1788J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713
CPC1788J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+984.95 грн
25+804.56 грн
В кошику  од. на суму  грн.
PBA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
PBA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PBA150STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
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DSEP29-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb
DSEP29-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+310.86 грн
10+181.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSI30-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19
DSI30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+195.79 грн
9+108.44 грн
24+102.86 грн
100+98.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDD142-12N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834FBC6AAC00C4&compId=MDD142-12N1.pdf?ci_sign=e60450221a50dc38006779b9dcd279ebaf641ce1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
товару немає в наявності
В кошику  од. на суму  грн.
DMA30P1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4530BDDF9C0C4&compId=DMA30P1600HR.pdf?ci_sign=353bf02d8c968b714b88bc63f36a7db07a0987a9
DMA30P1600HR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+685.26 грн
3+456.10 грн
6+431.38 грн
В кошику  од. на суму  грн.
MCMA140P1600TA pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140P1600TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2793.42 грн
5+2524.52 грн
В кошику  од. на суму  грн.
IXFH16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFH16N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFH120N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH120N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X3-Class
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1225.39 грн
2+868.35 грн
3+821.31 грн
В кошику  од. на суму  грн.
IXFH120N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC061820&compId=IXFH120N25T.pdf?ci_sign=794599a89c83b00c82e6901dab3e03a7b4e0dc23
IXFH120N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 108ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+741.93 грн
3+642.69 грн
В кошику  од. на суму  грн.
MDD142-08N1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834B88367E20C4&compId=MDD142-08N1.pdf?ci_sign=82f8deb8816351787434df686089668623dcf373
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
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IXFA8N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284EDE0DB0C5820&compId=IXFP(Q)8N85X_HV.pdf?ci_sign=a8e6404908a41fd6ea4d855574b806b2f1938c58
IXFA8N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Case: TO263HV
On-state resistance: 0.85Ω
Drain current: 8A
Pulsed drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 200W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Reverse recovery time: 125ns
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+431.08 грн
3+358.82 грн
8+340.48 грн
10+334.90 грн
В кошику  од. на суму  грн.
IXFY4N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5
IXFY4N85X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO252
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+330.61 грн
6+161.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA4N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5
IXFA4N85X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO263
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+249.89 грн
9+108.44 грн
24+102.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA14N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb
IXFA14N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Case: TO263HV
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
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IXFA20N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7D2BF5BAE38BF&compId=IXFA20N85XHV.pdf?ci_sign=81d9ba09897f60f2974f4faff6b6192eda367229
IXFA20N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Mounting: SMD
Case: TO263
On-state resistance: 0.33Ω
Drain current: 20A
Gate-source voltage: ±30V
Power dissipation: 540W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 63nC
Reverse recovery time: 190ns
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В кошику  од. на суму  грн.
IXFT40N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A00561D2379820&compId=IXFT40N85X.PDF?ci_sign=17b8d459553279811895159364e457a57b9a6562
IXFT40N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.145Ω
Drain current: 40A
Power dissipation: 860W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 98nC
Reverse recovery time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYY8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYY8N90C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+267.92 грн
25+190.57 грн
70+142.73 грн
140+123.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYP8N90C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+271.36 грн
3+226.46 грн
10+200.14 грн
50+180.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYP8N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
товару немає в наявності
В кошику  од. на суму  грн.
IXYA8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYA8N90C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
товару немає в наявності
В кошику  од. на суму  грн.
IXFH18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89
IXFH18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
DLA100B1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293
DLA100B1200LB-TUB
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1356.78 грн
3+1191.29 грн
20+1174.55 грн
В кошику  од. на суму  грн.
IXTT24P20 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA012B7501098BF&compId=IXT_24P20.pdf?ci_sign=7205947c30c99ec8834ade2f2c88d0a2a265662f
IXTT24P20
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.15Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Case: TO268
на замовлення 183 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+839.83 грн
2+593.25 грн
5+560.56 грн
30+539.03 грн
В кошику  од. на суму  грн.
IXFK220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFK220N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1277.78 грн
3+1046.17 грн
10+947.29 грн
В кошику  од. на суму  грн.
IXFT220N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT220N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
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IXFH220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH220N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
товару немає в наявності
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MEA250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
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XAA117S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+248.17 грн
50+151.50 грн
250+121.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+248.17 грн
50+151.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+248.17 грн
50+151.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
XAA117STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
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IXGA30N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c
IXGA30N120B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
товару немає в наявності
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IXYH30N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae
IXYH30N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
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IXFN30N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3
IXFN30N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Electrical mounting: screw
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IXFB30N120P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED471DAC7962A18&compId=IXFB30N120P.pdf?ci_sign=6747945f68e4b9f5a1fcbc7994466499b2c08e0b
IXFB30N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXGT30N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3
IXGT30N120B3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-off time: 471ns
Turn-on time: 56ns
Collector-emitter voltage: 1.2kV
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IXYH30N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACAFCD3B665820&compId=IXYH30N120C3D1.pdf?ci_sign=bf46a6df4aae9941a3d72e05b9e26fc24022a6f1
IXYH30N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
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IXYP30N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae
IXYP30N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
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IXA33IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DEF404B5D8BF&compId=IXA33IF1200HB.pdf?ci_sign=02e291729e01b364bd485a7eae853dab33af3810
IXA33IF1200HB
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Turn-on time: 110ns
Turn-off time: 350ns
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LOC111 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2
LOC111
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+234.43 грн
8+130.77 грн
20+123.59 грн
100+122.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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