| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IX4427NETR | IXYS |
 Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC8 Output current: 1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...30V Kind of output: non-inverting Impulse rise time: 10ns Integrated circuit features: MOSFET Pulse fall time: 8ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||
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IXFR230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™ Drain-source voltage: 200V Drain current: 156A Case: ISOPLUS247™ Polarisation: unipolar On-state resistance: 8mΩ Power dissipation: 600W Kind of channel: enhancement Gate charge: 358nC Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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IXTQ130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Drain-source voltage: 200V Drain current: 75A Case: TO3P Polarisation: unipolar On-state resistance: 16mΩ Pulsed drain current: 320A Power dissipation: 830W Technology: Trench™ Kind of channel: enhancement Gate charge: 150nC Reverse recovery time: 150ns Gate-source voltage: ±20V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXFN230N20T | IXYS |
Category: Transistor modules Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 220A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 7.5mΩ Pulsed drain current: 630A Power dissipation: 1090W Technology: GigaMOS™ Kind of channel: enhancement Gate charge: 358nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTA32N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 32A Power dissipation: 200W Case: TO263 On-state resistance: 78mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 110ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC5603CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Drain current: 0.13A Kind of channel: depletion Drain-source voltage: 415V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 14Ω |
на замовлення 121 шт: термін постачання 14-30 дні (днів) |
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IXBOD1-21R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk Mounting: THT Breakover voltage: 2.1kV Max. load current: 0.9A Kind of package: bulk Case: BOD Type of thyristor: BOD x3 |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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IXYH40N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Kind of package: tube Turn-off time: 206ns Gate charge: 70nC Turn-on time: 65ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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VBO40-08NO6 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A Max. off-state voltage: 0.8kV Load current: 40A Max. forward impulse current: 0.32kA Case: SOT227B Version: module Mechanical mounting: screw Leads: M4 screws Electrical mounting: screw Type of bridge rectifier: single-phase |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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IXFK52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhancement Gate charge: 245nC Features of semiconductor devices: ultra junction x-class Kind of package: tube Reverse recovery time: 260ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFN52N100X | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Gate charge: 245nC Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 260ns Pulsed drain current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXFX52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: N Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO247-3 Gate-source voltage: 30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhancement Gate charge: 245nC Application: automotive industry Reverse recovery time: 260ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
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IXTA100N04T2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 25.5nC Kind of channel: enhancement Reverse recovery time: 34ns Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||
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LF2388BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: SMD Topology: IGBT three-phase bridge; MOSFET three-phase bridge Supply voltage: 10...20V Output current: -750...420mA Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Kind of package: reel; tape Case: SO20 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||
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IXBOD1-18R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk Mounting: THT Breakover voltage: 1.8kV Max. load current: 1.25A Kind of package: bulk Case: BOD Type of thyristor: BOD x2 |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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| MCC200-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 196A x2 Case: Y4-M6 Max. forward voltage: 1.2V Max. forward impulse current: 8.6kA Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXTQ64N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 64A Power dissipation: 400W Case: TO3P Gate-source voltage: ±20V On-state resistance: 49mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||
| IXBH14N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV Collector-emitter voltage: 3kV Power dissipation: 200W Gate charge: 62nC Pulsed collector current: 120A Type of transistor: IGBT Kind of package: tube Case: TO247HV Gate-emitter voltage: ±20V Collector current: 38A Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
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PS1201 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase Operating temperature: -40...85°C Insulation voltage: 3.75kV Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Switched voltage: max. 400V AC Case: SIP4 Max. operating current: 1A Control current max.: 100mA |
на замовлення 135 шт: термін постачання 14-30 дні (днів) |
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| IXYL60N450 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 38A Power dissipation: 417W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 680A Mounting: THT Gate charge: 366nC Kind of package: tube Turn-on time: 724ns Turn-off time: 1.58µs Features of semiconductor devices: high voltage |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXTT360N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO268 On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTH360N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO247-3 On-state resistance: 2.4mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MCD162-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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MCC162-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V Max. forward impulse current: 5.1kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: screw Load current: 181A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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MCC162-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Max. forward impulse current: 6.48kA Gate current: 150/200mA Max. forward voltage: 1.25V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 181A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| MCD162-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCD162-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCD162-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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MCC162-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V Max. forward impulse current: 6.48kA Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 181A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXTL2x180N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns Type of transistor: N-MOSFET Technology: Trench Drain-source voltage: 100V Drain current: 100A Power dissipation: 150W Gate-source voltage: 20V On-state resistance: 9mΩ Mounting: THT Kind of channel: enhancement Reverse recovery time: 60ns Gate charge: 151nC |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
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IXFK170N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 170A Power dissipation: 1.15kW Case: TO264 On-state resistance: 11mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFK170N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO264 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFK170N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 170A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||
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IXFK170N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 170A Power dissipation: 890W Case: TO264 On-state resistance: 7.4mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Features of semiconductor devices: ultra junction x-class |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTH6N120 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXSH50N120L3KHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||
| IXSH150N120L3KHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||
| IXGT64N60B3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 64A; 460W; TO268 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 460W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: SMD Gate charge: 168nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||
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IXGX100N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™ Mounting: THT Features of semiconductor devices: high voltage Pulsed collector current: 600A Type of transistor: IGBT Turn-on time: 285ns Kind of package: tube Case: PLUS247™ Turn-off time: 720ns Gate-emitter voltage: ±20V Collector current: 100A Collector-emitter voltage: 1.7kV Power dissipation: 830W Gate charge: 425nC Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1909J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 6.5A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.1Ω Mounting: THT Case: ISOPLUS264™ Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Turn-on time: 25ms Turn-off time: 10ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1908J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC Max. operating current: 3.5A Switched voltage: max. 60V AC; max. 60V DC On-state resistance: 0.3Ω Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Case: i4-pac Turn-off time: 5ms Control current max.: 100mA Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 19.91x20.88x5.03mm Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IX4426N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Mounting: SMD Supply voltage: 4.5...35V Output current: -1.5...1.5A Type of integrated circuit: driver Kind of output: inverting Operating temperature: -40...125°C Kind of package: tube Case: SO8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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| IX4426CMTR | IXYS |
Category: MOSFET/IGBT drivers Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||
| IX4426CN | IXYS |
Category: MOSFET/IGBT drivers Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
| IX4426CNTR | IXYS |
Category: MOSFET/IGBT drivers Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| IX4427NETR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
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Мінімальне замовлення: 2000 шт
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| IXFR230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
Case: ISOPLUS247™
Polarisation: unipolar
On-state resistance: 8mΩ
Power dissipation: 600W
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
Case: ISOPLUS247™
Polarisation: unipolar
On-state resistance: 8mΩ
Power dissipation: 600W
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2094.01 грн |
| 3+ | 1750.59 грн |
| 10+ | 1549.12 грн |
| IXTQ130N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO3P
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO3P
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 736.60 грн |
| 3+ | 615.41 грн |
| 10+ | 543.46 грн |
| 30+ | 488.44 грн |
| IXFN230N20T |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 220A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 630A
Power dissipation: 1090W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 220A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 630A
Power dissipation: 1090W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTA32N20T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
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| CPC5603CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 0.13A
Kind of channel: depletion
Drain-source voltage: 415V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 14Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 0.13A
Kind of channel: depletion
Drain-source voltage: 415V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 14Ω
на замовлення 121 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.11 грн |
| 10+ | 44.36 грн |
| 50+ | 40.46 грн |
| 100+ | 38.77 грн |
| IXBOD1-21R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk
Mounting: THT
Breakover voltage: 2.1kV
Max. load current: 0.9A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x3
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk
Mounting: THT
Breakover voltage: 2.1kV
Max. load current: 0.9A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x3
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7129.84 грн |
| 3+ | 5851.09 грн |
| 10+ | 5256.84 грн |
| IXYH40N65C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 206ns
Gate charge: 70nC
Turn-on time: 65ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 206ns
Gate charge: 70nC
Turn-on time: 65ns
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| VBO40-08NO6 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.32kA
Case: SOT227B
Version: module
Mechanical mounting: screw
Leads: M4 screws
Electrical mounting: screw
Type of bridge rectifier: single-phase
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.32kA
Case: SOT227B
Version: module
Mechanical mounting: screw
Leads: M4 screws
Electrical mounting: screw
Type of bridge rectifier: single-phase
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2246.25 грн |
| 5+ | 2031.63 грн |
| IXFK52N100X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
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| IXFN52N100X |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
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| IXFX52N100X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXTA100N04T2-TRL |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| LF2388BTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of package: reel; tape
Case: SO20
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of package: reel; tape
Case: SO20
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| IXBOD1-18R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk
Mounting: THT
Breakover voltage: 1.8kV
Max. load current: 1.25A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x2
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk
Mounting: THT
Breakover voltage: 1.8kV
Max. load current: 1.25A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x2
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5591.93 грн |
| MCC200-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| IXTQ64N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXBH14N300HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 300 шт
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| PS1201 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 546.07 грн |
| IXYL60N450 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
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| IXTT360N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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| IXTH360N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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од. на суму грн.
| MCD162-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4858.98 грн |
| MCC162-14io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V
Max. forward impulse current: 5.1kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V
Max. forward impulse current: 5.1kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5576.43 грн |
| MCC162-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.25V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.25V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6348.58 грн |
| MCD162-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
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В кошику
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| MCD162-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
товару немає в наявності
В кошику
од. на суму грн.
| MCD162-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
товару немає в наявності
В кошику
од. на суму грн.
| MCC162-12io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
товару немає в наявності
В кошику
од. на суму грн.
| IXTL2x180N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 150W
Gate-source voltage: 20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 151nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 150W
Gate-source voltage: 20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 151nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFK170N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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од. на суму грн.
| IXFK170N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
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В кошику
од. на суму грн.
| IXFK170N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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од. на суму грн.
| IXFK170N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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В кошику
од. на суму грн.
| IXTH6N120 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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од. на суму грн.
| IXSH50N120L3KHV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| IXSH150N120L3KHV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| IXGT64N60B3-TRL |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 460W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 460W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 460W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 460W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
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Мінімальне замовлення: 400 шт
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| IXGX100N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
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| CPC1909J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| CPC1908J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
On-state resistance: 0.3Ω
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Case: i4-pac
Turn-off time: 5ms
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
On-state resistance: 0.3Ω
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Case: i4-pac
Turn-off time: 5ms
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
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| IX4426N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: tube
Case: SO8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: tube
Case: SO8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.20 грн |
| 10+ | 47.57 грн |
| 25+ | 44.27 грн |
| 50+ | 43.68 грн |
| IX4426CMTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IX4426CN |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IX4426CNTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.