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VUE75-12NO7 VUE75-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8895E059C37940C4&compId=VUE75-12NO7.pdf?ci_sign=47361efb1879fbe2a2ebc066258b9d6c06eb1e94 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1607.85 грн
10+1314.32 грн
В кошику  од. на суму  грн.
VUO68-12NO7 VUO68-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88805DBBE44460C4&compId=VUO68-12NO7.pdf?ci_sign=c0ee51601989ccf2ba8cc6ae72008a4ac26044f3 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+1155.40 грн
3+976.29 грн
5+908.68 грн
10+847.51 грн
В кошику  од. на суму  грн.
VUO68-08NO7 VUO68-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880567A6C9360C4&compId=VUO68-08NO7.pdf?ci_sign=97346785b5a2efc0318b61237cc151198a909cdb Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 70A; Ifsm: 300A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+1155.40 грн
10+847.51 грн
В кошику  од. на суму  грн.
CLA16E1200PN CLA16E1200PN IXYS CLA16E1200PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 1.2kV
Case: TO220FP
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
2+244.43 грн
10+124.75 грн
50+114.29 грн
100+110.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CS45-16IO1R CS45-16IO1R IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFB71DF8D21820&compId=CS45-16io1R.pdf?ci_sign=efdda7ec6c6e9a406aed03cc4f534b63b8ad9084 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
1+583.33 грн
5+428.99 грн
10+381.50 грн
30+373.45 грн
В кошику  од. на суму  грн.
CS45-16IO1 CS45-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 pVersion=0046&contRep=ZT&docId=E1C0492FBC2D6FF1A6F5005056AB5A8F&compId=CS45-16IO1.pdf?ci_sign=50880bc4b954e45707319554f5d24fd02df256ec description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
товару немає в наявності
В кошику  од. на суму  грн.
IXTP140N055T2 IXTP140N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1323820&compId=IXTP140N055T2.pdf?ci_sign=4fde222e64865f76b52f5a21b6005238850dbe91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTT440N055T2 IXTT440N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTH440N055T2 IXTH440N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
DSB60C30PB DSB60C30PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
4+108.35 грн
5+90.14 грн
10+79.68 грн
50+71.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DSB60C45PB DSB60C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику  од. на суму  грн.
DSB60C30HB DSB60C30HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA08444F62B8BF&compId=DSB60C30HB.pdf?ci_sign=4867e853e054ab2d49791b486e9606de233af8cf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику  од. на суму  грн.
DSB60C60PB DSB60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику  од. на суму  грн.
CS60-14io1 CS60-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFBDEEAA993820&compId=CS60-14io1.pdf?ci_sign=3a3d20fdce3befdf541fff29fba3c8fe507427f9 Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS247™
Type of thyristor: thyristor
Gate current: 200mA
Max. forward impulse current: 1.4A
Load current: 60A
Max. load current: 75A
Max. off-state voltage: 1.4kV
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1287.15 грн
3+1057.58 грн
10+948.92 грн
30+915.92 грн
В кошику  од. на суму  грн.
IXTH110N25T IXTH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+654.41 грн
В кошику  од. на суму  грн.
IXFH110N15T2 IXFH110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 21-30 дні (днів)
1+457.65 грн
3+381.50 грн
10+375.87 грн
В кошику  од. на суму  грн.
IXTP110N055T2 IXTP110N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
3+173.04 грн
10+136.02 грн
50+115.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFA110N15T2 IXFA110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
1+451.58 грн
В кошику  од. на суму  грн.
IXFH110N25T IXFH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
на замовлення 256 шт:
термін постачання 21-30 дні (днів)
1+704.68 грн
10+539.25 грн
30+438.64 грн
В кошику  од. на суму  грн.
VUB120-16NOX VUB120-16NOX IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B3548F568880D8&compId=VUB120-16NOX.pdf?ci_sign=4b3165f8cc8537c2e4339967fc5c96bd0db594db Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Topology: buck chopper; three-phase diode bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: V2-Pack
Application: Inverter
Semiconductor structure: diode/transistor
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+6076.89 грн
В кошику  од. на суму  грн.
LBB120 LBB120 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
2+424.71 грн
10+320.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCB120S LCB120S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD865A0C7&compId=LCB120.pdf?ci_sign=27accf77bd4dab2be2154ac1ae4e7fe950ad8f63 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+256.56 грн
10+177.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LBB120S LBB120S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
1+631.00 грн
50+481.30 грн
В кошику  од. на суму  грн.
IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 9.3nC
Reverse recovery time: 400ns
Technology: Polar™
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
17+26.87 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
FDM47-06KC5
+1
 		FDM47-06KC5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+676.94 грн
3+599.62 грн
10+577.88 грн
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IXTA80N10T IXTA80N10T IXYS IXTA(P)80N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTP180N10T IXYS IXTA(P)180N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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PM1204 PM1204 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+513.99 грн
10+349.31 грн
50+291.36 грн
100+280.09 грн
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PM1205 PM1205 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
2+363.17 грн
10+282.50 грн
100+275.26 грн
Мінімальне замовлення: 2
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PM1205S PM1205S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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PM1205STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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IXGT24N170 IXGT24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 105ns
Gate charge: 106nC
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
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IXGT24N170A IXGT24N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 54ns
Gate charge: 0.14µC
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
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IXFN130N90SK IXFN130N90SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Case: SOT227B
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Drain current: 109A
Drain-source voltage: 900V
Semiconductor structure: single transistor
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MCNA120UI2200TED IXYS MCNA120UI2200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
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DCG160X650NA DCG160X650NA IXYS littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 80A x2
Case: SOT227B
Max. forward voltage: 1.35V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
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IXBF20N300 IXBF20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+4477.71 грн
3+3802.93 грн
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IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
Gate charge: 0.1µC
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
1+519.19 грн
10+396.79 грн
25+317.11 грн
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DSA120C150QB DSA120C150QB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDC439A04D18BF&compId=DSA120C150QB.pdf?ci_sign=840717d89b177139db5b20b1a2d77118d1680f5c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60Ax2; TO3P; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. forward voltage: 0.8V
Max. forward impulse current: 1.2kA
Power dissipation: 375W
Kind of package: tube
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IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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IXYP30N65C3 IXYP30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXYH30N65C3 IXYH30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS IXY_30N65C3H1_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXTP36P15P IXTP36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Gate charge: 55nC
Reverse recovery time: 228ns
On-state resistance: 0.11Ω
Power dissipation: 300W
Gate-source voltage: ±20V
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
1+492.32 грн
10+276.87 грн
50+272.04 грн
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IXTR36P15P IXTR36P15P IXYS IXTR36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Case: ISOPLUS247™
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Gate charge: 55nC
Reverse recovery time: 150ns
On-state resistance: 0.12Ω
Power dissipation: 150W
Gate-source voltage: ±20V
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
2+432.52 грн
3+354.94 грн
10+318.72 грн
30+297.80 грн
Мінімальне замовлення: 2
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IXTA36P15P IXTA36P15P IXYS IXT_36P15P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTH36P15P IXTH36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTQ36P15P IXTQ36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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MCC95-08io1B MCC95-08io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B6E42C460A854A18&compId=MCC95-08io1B.pdf?ci_sign=ff1205aa795a501d5105af34eae2c48f9ea0609a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+2948.73 грн
3+2557.02 грн
10+2281.76 грн
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IXFH26N50P3 IXFH26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 406 шт:
термін постачання 21-30 дні (днів)
1+503.59 грн
5+393.57 грн
10+354.94 грн
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IXFH26N50P IXFH26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+462.85 грн
10+354.94 грн
В кошику  од. на суму  грн.
IXTQ26N50P IXTQ26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
1+442.05 грн
3+377.48 грн
10+327.58 грн
30+323.55 грн
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IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
4+136.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFQ26N50P3 IXFQ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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IXFJ26N50P3 IXFJ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
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IXTT26N50P IXTT26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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CPC1009NTR CPC1009NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Relay variant: 1-phase; current source
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VUE75-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8895E059C37940C4&compId=VUE75-12NO7.pdf?ci_sign=47361efb1879fbe2a2ebc066258b9d6c06eb1e94
VUE75-12NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1607.85 грн
10+1314.32 грн
В кошику  од. на суму  грн.
VUO68-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88805DBBE44460C4&compId=VUO68-12NO7.pdf?ci_sign=c0ee51601989ccf2ba8cc6ae72008a4ac26044f3
VUO68-12NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1155.40 грн
3+976.29 грн
5+908.68 грн
10+847.51 грн
В кошику  од. на суму  грн.
VUO68-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880567A6C9360C4&compId=VUO68-08NO7.pdf?ci_sign=97346785b5a2efc0318b61237cc151198a909cdb
VUO68-08NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 70A; Ifsm: 300A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1155.40 грн
10+847.51 грн
В кошику  од. на суму  грн.
CLA16E1200PN CLA16E1200PN.pdf
CLA16E1200PN
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 1.2kV
Case: TO220FP
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+244.43 грн
10+124.75 грн
50+114.29 грн
100+110.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CS45-16IO1R pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFB71DF8D21820&compId=CS45-16io1R.pdf?ci_sign=efdda7ec6c6e9a406aed03cc4f534b63b8ad9084
CS45-16IO1R
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+583.33 грн
5+428.99 грн
10+381.50 грн
30+373.45 грн
В кошику  од. на суму  грн.
CS45-16IO1 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 pVersion=0046&contRep=ZT&docId=E1C0492FBC2D6FF1A6F5005056AB5A8F&compId=CS45-16IO1.pdf?ci_sign=50880bc4b954e45707319554f5d24fd02df256ec
CS45-16IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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IXTP140N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1323820&compId=IXTP140N055T2.pdf?ci_sign=4fde222e64865f76b52f5a21b6005238850dbe91
IXTP140N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808
IXTT440N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH440N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808
IXTH440N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
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DSB60C30PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e
DSB60C30PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.35 грн
5+90.14 грн
10+79.68 грн
50+71.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DSB60C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453
DSB60C45PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C30HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA08444F62B8BF&compId=DSB60C30HB.pdf?ci_sign=4867e853e054ab2d49791b486e9606de233af8cf
DSB60C30HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2
DSB60C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
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CS60-14io1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFBDEEAA993820&compId=CS60-14io1.pdf?ci_sign=3a3d20fdce3befdf541fff29fba3c8fe507427f9
CS60-14io1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS247™
Type of thyristor: thyristor
Gate current: 200mA
Max. forward impulse current: 1.4A
Load current: 60A
Max. load current: 75A
Max. off-state voltage: 1.4kV
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1287.15 грн
3+1057.58 грн
10+948.92 грн
30+915.92 грн
В кошику  од. на суму  грн.
IXTH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40
IXTH110N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+654.41 грн
В кошику  од. на суму  грн.
IXFH110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78
IXFH110N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+457.65 грн
3+381.50 грн
10+375.87 грн
В кошику  од. на суму  грн.
IXTP110N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588
IXTP110N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+173.04 грн
10+136.02 грн
50+115.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFA110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3
IXFA110N15T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+451.58 грн
В кошику  од. на суму  грн.
IXFH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293
IXFH110N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
на замовлення 256 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+704.68 грн
10+539.25 грн
30+438.64 грн
В кошику  од. на суму  грн.
VUB120-16NOX pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B3548F568880D8&compId=VUB120-16NOX.pdf?ci_sign=4b3165f8cc8537c2e4339967fc5c96bd0db594db
VUB120-16NOX
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Topology: buck chopper; three-phase diode bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: V2-Pack
Application: Inverter
Semiconductor structure: diode/transistor
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6076.89 грн
В кошику  од. на суму  грн.
LBB120 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d
LBB120
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+424.71 грн
10+320.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCB120S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD865A0C7&compId=LCB120.pdf?ci_sign=27accf77bd4dab2be2154ac1ae4e7fe950ad8f63
LCB120S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+256.56 грн
10+177.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LBB120S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d
LBB120S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+631.00 грн
50+481.30 грн
В кошику  од. на суму  грн.
IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 9.3nC
Reverse recovery time: 400ns
Technology: Polar™
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.87 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
FDM47-06KC5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b
FDM47-06KC5
+1
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+676.94 грн
3+599.62 грн
10+577.88 грн
В кошику  од. на суму  грн.
IXTA80N10T IXTA(P)80N10T.pdf
IXTA80N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTA(P)180N10T.pdf
IXTP180N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
товару немає в наявності
В кошику  од. на суму  грн.
PM1204 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99
PM1204
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+513.99 грн
10+349.31 грн
50+291.36 грн
100+280.09 грн
В кошику  од. на суму  грн.
PM1205 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
PM1205
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+363.17 грн
10+282.50 грн
100+275.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM1205S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
PM1205S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
товару немає в наявності
В кошику  од. на суму  грн.
PM1205STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
товару немає в наявності
В кошику  од. на суму  грн.
IXGT24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901
IXGT24N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 105ns
Gate charge: 106nC
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
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IXGT24N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72
IXGT24N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 54ns
Gate charge: 0.14µC
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
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IXFN130N90SK
IXFN130N90SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Case: SOT227B
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Drain current: 109A
Drain-source voltage: 900V
Semiconductor structure: single transistor
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MCNA120UI2200TED MCNA120UI2200TED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
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DCG160X650NA littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd
DCG160X650NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 80A x2
Case: SOT227B
Max. forward voltage: 1.35V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
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IXBF20N300 littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf
IXBF20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4477.71 грн
3+3802.93 грн
В кошику  од. на суму  грн.
IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
Gate charge: 0.1µC
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+519.19 грн
10+396.79 грн
25+317.11 грн
В кошику  од. на суму  грн.
DSA120C150QB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BEDC439A04D18BF&compId=DSA120C150QB.pdf?ci_sign=840717d89b177139db5b20b1a2d77118d1680f5c
DSA120C150QB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60Ax2; TO3P; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. forward voltage: 0.8V
Max. forward impulse current: 1.2kA
Power dissipation: 375W
Kind of package: tube
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IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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IXYP30N65C3 IXYH(P)30N65C3.pdf
IXYP30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXYH30N65C3 IXYH(P)30N65C3.pdf
IXYH30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYH30N65C3H1 IXY_30N65C3H1_HV.pdf
IXYH30N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXTP36P15P IXT_36P15P.pdf
IXTP36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Gate charge: 55nC
Reverse recovery time: 228ns
On-state resistance: 0.11Ω
Power dissipation: 300W
Gate-source voltage: ±20V
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+492.32 грн
10+276.87 грн
50+272.04 грн
В кошику  од. на суму  грн.
IXTR36P15P IXTR36P15P.pdf
IXTR36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Case: ISOPLUS247™
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Gate charge: 55nC
Reverse recovery time: 150ns
On-state resistance: 0.12Ω
Power dissipation: 150W
Gate-source voltage: ±20V
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+432.52 грн
3+354.94 грн
10+318.72 грн
30+297.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA36P15P IXT_36P15P.pdf
IXTA36P15P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTH36P15P IXT_36P15P.pdf
IXTH36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ36P15P IXT_36P15P.pdf
IXTQ36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
товару немає в наявності
В кошику  од. на суму  грн.
MCC95-08io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B6E42C460A854A18&compId=MCC95-08io1B.pdf?ci_sign=ff1205aa795a501d5105af34eae2c48f9ea0609a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC95-08io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2948.73 грн
3+2557.02 грн
10+2281.76 грн
В кошику  од. на суму  грн.
IXFH26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFH26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 406 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+503.59 грн
5+393.57 грн
10+354.94 грн
В кошику  од. на суму  грн.
IXFH26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+462.85 грн
10+354.94 грн
В кошику  од. на суму  грн.
IXTQ26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTQ26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+442.05 грн
3+377.48 грн
10+327.58 грн
30+323.55 грн
В кошику  од. на суму  грн.
IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+136.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFQ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFQ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb
IXFJ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
товару немає в наявності
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IXTT26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTT26N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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CPC1009NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1
CPC1009NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Relay variant: 1-phase; current source
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