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IX2127N IX2127N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
на замовлення 825 шт:
термін постачання 21-30 дні (днів)
9+53.87 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
LBA716S LBA716S IXYS lba716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
1+559.91 грн
10+487.11 грн
50+394.45 грн
100+374.77 грн
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IXFP7N100P IXFP7N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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DSA120X200LB-TUB DSA120X200LB-TUB IXYS DSA120X200LB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1516.35 грн
В кошику  од. на суму  грн.
IXFN140N30P IXFN140N30P IXYS IXFN140N30P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 185nC
Reverse recovery time: 200ns
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+2595.55 грн
5+2071.47 грн
10+2001.76 грн
В кошику  од. на суму  грн.
DSSK50-015A DSSK50-015A IXYS DSSK50-015A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. forward voltage: 0.68V
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 135W
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
2+362.97 грн
3+298.50 грн
10+273.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSSK50-01A DSSK50-01A IXYS DSSK50-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. forward voltage: 0.65V
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 135W
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
2+346.19 грн
3+283.74 грн
10+259.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSSK50-0025B DSSK50-0025B IXYS DSSK50-0025B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. forward voltage: 0.42V
Max. off-state voltage: 25V
Load current: 25A x2
Power dissipation: 90W
Max. forward impulse current: 330A
Semiconductor structure: common cathode; double
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
2+255.23 грн
3+213.22 грн
10+188.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN609YI IXDN609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 814 шт:
термін постачання 21-30 дні (днів)
2+227.85 грн
10+178.77 грн
50+151.71 грн
100+142.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN602SI IXDN602SI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SIATR IXDN602SIATR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SITR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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MCC255-14io1 MCC255-14io1 IXYS MCC255-14io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+16611.86 грн
3+13580.16 грн
В кошику  од. на суму  грн.
MCC255-16io1 MCC255-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99D55E8C6C820C4&compId=MCC255-16IO1.pdf?ci_sign=93ad59242ff7c1ab22df90aad5d7e28db873c9c4 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Max. forward impulse current: 7.82kA
Load current: 250A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
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MCC255-18io1 MCC255-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Max. forward impulse current: 7.82kA
Load current: 250A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC255-12io1 MCC255-12io1 IXYS MCC255-12io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
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VHFD16-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C87224FE0E2F8BF&compId=VHFD16.pdf?ci_sign=5ca0363f707688a2b5876a748a4685cfb7cf995a Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD16-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E5B31FD220C4&compId=VHFD16.pdf?ci_sign=810d4c6dfa2d8e79071b45156d6954fd1ad917d1 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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IXTY2P50PA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9B97E6B85EF4C0D6&compId=IXTY2P50PA.pdf?ci_sign=bd00d8d990ebc0245900d412c7fbf52ca1c13176 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -2A; Idm: -6A; 58W
Mounting: SMD
Technology: PolarP™
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -6A
Drain current: -2A
Gate charge: 11.9nC
Reverse recovery time: 300ns
Power dissipation: 58W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: TO252
Kind of channel: enhancement
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PD1201 PD1201 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98340C7&compId=PD1201.pdf?ci_sign=4796b58c31b7fff3573b515888640bb4399b4c51 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
1+634.09 грн
10+481.37 грн
25+426.43 грн
100+392.81 грн
В кошику  од. на суму  грн.
IXFN520N075T2 IXFN520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C436477B578BF&compId=IXFN520N075T2.pdf?ci_sign=da0994bc8236c5e5fae595d8fdc5eb075706d345 Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXFY36N20X3 IXFY36N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB6388D34678BF&compId=IXF_36N20X3.pdf?ci_sign=e9a60fb97407140d73df56f3f3d828fbd32fadba pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 75ns
On-state resistance: 45mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 176W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO252
на замовлення 368 шт:
термін постачання 21-30 дні (днів)
2+326.76 грн
10+243.56 грн
25+206.65 грн
70+189.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFX360N10T IXFX360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 525nC
On-state resistance: 2.9mΩ
Drain current: 360A
Power dissipation: 1.25kW
Drain-source voltage: 100V
Kind of channel: enhancement
Case: PLUS247™
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+878.72 грн
3+777.42 грн
10+673.27 грн
В кошику  од. на суму  грн.
IXFP36N20X3 IXFP36N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB6388D34678BF&compId=IXF_36N20X3.pdf?ci_sign=e9a60fb97407140d73df56f3f3d828fbd32fadba pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 75ns
On-state resistance: 45mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 176W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
2+273.77 грн
10+182.87 грн
50+162.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA230N075T2 IXFA230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 178nC
Reverse recovery time: 59ns
On-state resistance: 4.2mΩ
Drain current: 230A
Power dissipation: 480W
Drain-source voltage: 75V
Kind of channel: enhancement
Case: TO263
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+289.67 грн
3+241.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK230N20T IXFK230N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCF347BAAB5820&compId=IXFK(X)230N20T.pdf?ci_sign=e4a579f4f1660cfb2f2f8a74c12b8edd99086286 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 358nC
On-state resistance: 7.5mΩ
Drain current: 230A
Power dissipation: 1.67kW
Drain-source voltage: 200V
Kind of channel: enhancement
Case: TO264
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1446.58 грн
В кошику  од. на суму  грн.
MCMA120UJ1800ED MCMA120UJ1800ED IXYS MCMA120UJ1800ED.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.8kV
Load current: 120A
Max. forward impulse current: 0.5kA
Gate current: 70/150mA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: E2-Pack
Features of semiconductor devices: freewheelling diode
Max. forward voltage: 1.36V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+5625.60 грн
В кошику  од. на суму  грн.
MCC72-16io8B MCC72-16io8B IXYS pVersion=0046&contRep=ZT&docId=E29206E7D615C5F19A99005056AB752F&compId=L076.pdf?ci_sign=8c4b57e01879000fdaed2cf55e4756f17dc884aa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: thyristor
Semiconductor structure: double series
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+3004.44 грн
3+2509.38 грн
10+2324.86 грн
В кошику  од. на суму  грн.
DSA240X150NA DSA240X150NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF5C2EF0B738BF&compId=DSA240X150NA.pdf?ci_sign=0270766f6ee4cb1d8bd81ef7f4fa0462d6851a0d Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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MCD44-12IO1B MCD44-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 49A
Max. forward impulse current: 1.15kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 77A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
1+2138.08 грн
3+1741.80 грн
10+1579.43 грн
36+1508.91 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.6kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
1+4753.06 грн
6+4136.37 грн
В кошику  од. на суму  грн.
CPC1130N CPC1130N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
3+168.68 грн
10+139.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFH6N120 IXFH6N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Power dissipation: 300W
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+772.75 грн
3+669.99 грн
10+572.40 грн
В кошику  од. на суму  грн.
IXFR16N120P IXFR16N120P IXYS IXFR16N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+622.61 грн
В кошику  од. на суму  грн.
MCMA400PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
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В кошику  од. на суму  грн.
CMA40E1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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DSEC59-06BC DSEC59-06BC IXYS DSE(A,C)-06BC.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 25ns
Max. forward voltage: 2.51V
Load current: 30A x2
Power dissipation: 135W
Max. forward impulse current: 250A
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+266.71 грн
3+223.06 грн
10+197.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PS1201 PS1201 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3300C7&compId=PS1201.pdf?ci_sign=0f613ed3e25b644f7c8a3385a41559216377d791 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: SIP4
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
2+333.83 грн
25+296.86 грн
100+267.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ200N10T IXTQ200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 76ns
Gate charge: 152nC
On-state resistance: 5.5mΩ
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Kind of package: tube
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+611.13 грн
В кошику  од. на суму  грн.
IXTK200N10P IXTK200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+854.00 грн
3+754.45 грн
5+751.99 грн
В кошику  од. на суму  грн.
IXFN200N10P IXFN200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c description Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
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IXTN200N10T IXTN200N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF620111CC99820&compId=IXTN200N10T.pdf?ci_sign=47e3508a6a84eac76a19a547dda3173382c5c6bf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 76ns
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IXTH75N10L2 IXTH75N10L2 IXYS IXT_75N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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IXFT400N075T2 IXFT400N075T2 IXYS IXFH(T)400N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 420nC
Reverse recovery time: 77ns
On-state resistance: 2.3mΩ
Power dissipation: 1kW
Drain current: 400A
Drain-source voltage: 75V
Kind of package: tube
Case: TO268
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DPG60B600LB-TRR IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
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DPG60B600LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: tube
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
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IXTP12N70X2 IXTP12N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 180W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+294.09 грн
3+245.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH12N70X2 IXTH12N70X2 IXYS IXTH12N70X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 19nC
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
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IXTP12N70X2M IXTP12N70X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 40W
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IXFH50N85X IXFH50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
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IXFK50N85X IXFK50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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LF21844NTR LF21844NTR IXYS LF21844NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of package: reel; tape
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IXFX220N17T2 IXFX220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+916.70 грн
3+757.73 грн
10+702.79 грн
В кошику  од. на суму  грн.
LCA220 LCA220 IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
On-state resistance: 20Ω
Mounting: THT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
1+443.34 грн
10+334.58 грн
50+293.58 грн
В кошику  од. на суму  грн.
DSA50C100HB DSA50C100HB IXYS DSA50C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
2+279.07 грн
3+233.72 грн
10+206.65 грн
30+188.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA30C100HB DSA30C100HB IXYS DSA30C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
на замовлення 53 шт:
термін постачання 21-30 дні (днів)
3+176.31 грн
10+155.81 грн
30+141.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP62N15P IXTP62N15P IXYS IXTA62N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Gate charge: 70nC
Reverse recovery time: 150ns
On-state resistance: 40mΩ
Power dissipation: 350W
Gate-source voltage: ±20V
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
2+318.81 грн
10+191.89 грн
50+184.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK180N15P IXTK180N15P IXYS IXTK180N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
1+1058.00 грн
5+850.40 грн
10+773.31 грн
25+767.57 грн
В кошику  од. на суму  грн.
IXTA15P15T IXTA15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IX2127N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
на замовлення 825 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+53.87 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
LBA716S lba716.pdf
LBA716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+559.91 грн
10+487.11 грн
50+394.45 грн
100+374.77 грн
В кошику  од. на суму  грн.
IXFP7N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEC13C244BC98BF&compId=IXF_7N100P.pdf?ci_sign=098a71bb06e557089a0d1511de1a94a0bc177181
IXFP7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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DSA120X200LB-TUB DSA120X200LB.pdf
DSA120X200LB-TUB
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1516.35 грн
В кошику  од. на суму  грн.
IXFN140N30P description IXFN140N30P.pdf
IXFN140N30P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 185nC
Reverse recovery time: 200ns
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2595.55 грн
5+2071.47 грн
10+2001.76 грн
В кошику  од. на суму  грн.
DSSK50-015A DSSK50-015A.pdf
DSSK50-015A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. forward voltage: 0.68V
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 135W
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+362.97 грн
3+298.50 грн
10+273.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSSK50-01A DSSK50-01A.pdf
DSSK50-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. forward voltage: 0.65V
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 135W
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+346.19 грн
3+283.74 грн
10+259.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSSK50-0025B DSSK50-0025B.pdf
DSSK50-0025B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. forward voltage: 0.42V
Max. off-state voltage: 25V
Load current: 25A x2
Power dissipation: 90W
Max. forward impulse current: 330A
Semiconductor structure: common cathode; double
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+255.23 грн
3+213.22 грн
10+188.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN609YI IXDD609CI.pdf
IXDN609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 814 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+227.85 грн
10+178.77 грн
50+151.71 грн
100+142.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN602SI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SIATR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
IXDN602SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SITR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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MCC255-14io1 MCC255-14io1.pdf
MCC255-14io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+16611.86 грн
3+13580.16 грн
В кошику  од. на суму  грн.
MCC255-16io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99D55E8C6C820C4&compId=MCC255-16IO1.pdf?ci_sign=93ad59242ff7c1ab22df90aad5d7e28db873c9c4
MCC255-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Max. forward impulse current: 7.82kA
Load current: 250A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
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MCC255-18io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9
MCC255-18io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Max. forward impulse current: 7.82kA
Load current: 250A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC255-12io1 MCC255-12io1.pdf
MCC255-12io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
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VHFD16-12IO1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C87224FE0E2F8BF&compId=VHFD16.pdf?ci_sign=5ca0363f707688a2b5876a748a4685cfb7cf995a
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD16-16IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E5B31FD220C4&compId=VHFD16.pdf?ci_sign=810d4c6dfa2d8e79071b45156d6954fd1ad917d1
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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IXTY2P50PA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9B97E6B85EF4C0D6&compId=IXTY2P50PA.pdf?ci_sign=bd00d8d990ebc0245900d412c7fbf52ca1c13176
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -2A; Idm: -6A; 58W
Mounting: SMD
Technology: PolarP™
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -6A
Drain current: -2A
Gate charge: 11.9nC
Reverse recovery time: 300ns
Power dissipation: 58W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: TO252
Kind of channel: enhancement
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PD1201 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98340C7&compId=PD1201.pdf?ci_sign=4796b58c31b7fff3573b515888640bb4399b4c51
PD1201
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+634.09 грн
10+481.37 грн
25+426.43 грн
100+392.81 грн
В кошику  од. на суму  грн.
IXFN520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C436477B578BF&compId=IXFN520N075T2.pdf?ci_sign=da0994bc8236c5e5fae595d8fdc5eb075706d345
IXFN520N075T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXFY36N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB6388D34678BF&compId=IXF_36N20X3.pdf?ci_sign=e9a60fb97407140d73df56f3f3d828fbd32fadba pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFY36N20X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 75ns
On-state resistance: 45mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 176W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO252
на замовлення 368 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+326.76 грн
10+243.56 грн
25+206.65 грн
70+189.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFX360N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e
IXFX360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 525nC
On-state resistance: 2.9mΩ
Drain current: 360A
Power dissipation: 1.25kW
Drain-source voltage: 100V
Kind of channel: enhancement
Case: PLUS247™
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+878.72 грн
3+777.42 грн
10+673.27 грн
В кошику  од. на суму  грн.
IXFP36N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB6388D34678BF&compId=IXF_36N20X3.pdf?ci_sign=e9a60fb97407140d73df56f3f3d828fbd32fadba pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP36N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 75ns
On-state resistance: 45mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 176W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+273.77 грн
10+182.87 грн
50+162.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01
IXFA230N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 178nC
Reverse recovery time: 59ns
On-state resistance: 4.2mΩ
Drain current: 230A
Power dissipation: 480W
Drain-source voltage: 75V
Kind of channel: enhancement
Case: TO263
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+289.67 грн
3+241.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK230N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCF347BAAB5820&compId=IXFK(X)230N20T.pdf?ci_sign=e4a579f4f1660cfb2f2f8a74c12b8edd99086286
IXFK230N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 358nC
On-state resistance: 7.5mΩ
Drain current: 230A
Power dissipation: 1.67kW
Drain-source voltage: 200V
Kind of channel: enhancement
Case: TO264
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1446.58 грн
В кошику  од. на суму  грн.
MCMA120UJ1800ED MCMA120UJ1800ED.pdf
MCMA120UJ1800ED
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.8kV; If: 120A; E2-Pack
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.8kV
Load current: 120A
Max. forward impulse current: 0.5kA
Gate current: 70/150mA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Case: E2-Pack
Features of semiconductor devices: freewheelling diode
Max. forward voltage: 1.36V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5625.60 грн
В кошику  од. на суму  грн.
MCC72-16io8B pVersion=0046&contRep=ZT&docId=E29206E7D615C5F19A99005056AB752F&compId=L076.pdf?ci_sign=8c4b57e01879000fdaed2cf55e4756f17dc884aa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC72-16io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: thyristor
Semiconductor structure: double series
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3004.44 грн
3+2509.38 грн
10+2324.86 грн
В кошику  од. на суму  грн.
DSA240X150NA pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF5C2EF0B738BF&compId=DSA240X150NA.pdf?ci_sign=0270766f6ee4cb1d8bd81ef7f4fa0462d6851a0d
DSA240X150NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товару немає в наявності
В кошику  од. на суму  грн.
MCD44-12IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD44-12IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 49A
Max. forward impulse current: 1.15kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 77A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2138.08 грн
3+1741.80 грн
10+1579.43 грн
36+1508.91 грн
В кошику  од. на суму  грн.
MCD162-16io1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.6kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4753.06 грн
6+4136.37 грн
В кошику  од. на суму  грн.
CPC1130N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e
CPC1130N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+168.68 грн
10+139.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFH6N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d
IXFH6N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Power dissipation: 300W
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+772.75 грн
3+669.99 грн
10+572.40 грн
В кошику  од. на суму  грн.
IXFR16N120P IXFR16N120P.pdf
IXFR16N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+622.61 грн
В кошику  од. на суму  грн.
MCMA400PD1600PTSF
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
товару немає в наявності
В кошику  од. на суму  грн.
CMA40E1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
товару немає в наявності
В кошику  од. на суму  грн.
DSEC59-06BC DSE(A,C)-06BC.pdf
DSEC59-06BC
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 25ns
Max. forward voltage: 2.51V
Load current: 30A x2
Power dissipation: 135W
Max. forward impulse current: 250A
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+266.71 грн
3+223.06 грн
10+197.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PS1201 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3300C7&compId=PS1201.pdf?ci_sign=0f613ed3e25b644f7c8a3385a41559216377d791
PS1201
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: SIP4
на замовлення 135 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+333.83 грн
25+296.86 грн
100+267.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ200N10T IXTH(Q)200N10T.pdf
IXTQ200N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 76ns
Gate charge: 152nC
On-state resistance: 5.5mΩ
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Kind of package: tube
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+611.13 грн
В кошику  од. на суму  грн.
IXTK200N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d
IXTK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+854.00 грн
3+754.45 грн
5+751.99 грн
В кошику  од. на суму  грн.
IXFN200N10P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c
IXFN200N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
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IXTN200N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF620111CC99820&compId=IXTN200N10T.pdf?ci_sign=47e3508a6a84eac76a19a547dda3173382c5c6bf
IXTN200N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 76ns
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В кошику  од. на суму  грн.
IXTH75N10L2 IXT_75N10L2.pdf
IXTH75N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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IXFT400N075T2 IXFH(T)400N075T2.pdf
IXFT400N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 420nC
Reverse recovery time: 77ns
On-state resistance: 2.3mΩ
Power dissipation: 1kW
Drain current: 400A
Drain-source voltage: 75V
Kind of package: tube
Case: TO268
товару немає в наявності
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DPG60B600LB-TRR
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
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DPG60B600LB-TUB
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: tube
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
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IXTP12N70X2 ixty2n65x2.pdf
IXTP12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 180W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+294.09 грн
3+245.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH12N70X2 IXTH12N70X2.pdf
IXTH12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 19nC
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
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IXTP12N70X2M ixty2n65x2.pdf
IXTP12N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 40W
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IXFH50N85X IXF_50N85X.pdf
IXFH50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
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IXFK50N85X IXF_50N85X.pdf
IXFK50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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LF21844NTR LF21844NTR.pdf
LF21844NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of package: reel; tape
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IXFX220N17T2 IXFK(X)220N17T2.pdf
IXFX220N17T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+916.70 грн
3+757.73 грн
10+702.79 грн
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LCA220 LCA220.pdf
LCA220
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
On-state resistance: 20Ω
Mounting: THT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+443.34 грн
10+334.58 грн
50+293.58 грн
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DSA50C100HB DSA50C100HB.pdf
DSA50C100HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.07 грн
3+233.72 грн
10+206.65 грн
30+188.61 грн
Мінімальне замовлення: 2
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DSA30C100HB DSA30C100HB.pdf
DSA30C100HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
на замовлення 53 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.31 грн
10+155.81 грн
30+141.87 грн
Мінімальне замовлення: 3
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IXTP62N15P IXTA62N15P-DTE.pdf
IXTP62N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Gate charge: 70nC
Reverse recovery time: 150ns
On-state resistance: 40mΩ
Power dissipation: 350W
Gate-source voltage: ±20V
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+318.81 грн
10+191.89 грн
50+184.51 грн
Мінімальне замовлення: 2
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IXTK180N15P IXTK180N15P-DTE.pdf
IXTK180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1058.00 грн
5+850.40 грн
10+773.31 грн
25+767.57 грн
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IXTA15P15T IXT_15P15T.pdf
IXTA15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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