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IXFA10N60P-TRL IXFA10N60P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 200ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTA10N60P IXTA10N60P IXYS media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
товару немає в наявності
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IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Pulsed drain current: 275A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
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 Мінімальне замовлення: 100 шт
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IXFB110N60P3 IXFB110N60P3 IXYS IXFB110N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Kind of package: tube
Reverse recovery time: 250ns
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IXTT75N10L2 IXTT75N10L2 IXYS IXT_75N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1104.51 грн
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IXTB62N50L IXTB62N50L IXYS IXTB62N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+3423.24 грн
3+2811.94 грн
10+2526.67 грн
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IXTK200N10L2 IXTK200N10L2 IXYS IXT_200N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
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IXTH80N20L IXTH80N20L IXYS IXTH(T)80N20L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Features of semiconductor devices: linear power mosfet
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IXTT80N20L IXTT80N20L IXYS IXTH(T)80N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
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IXTX240N075L2 IXTX240N075L2 IXYS IXTK(X)240N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTK240N075L2 IXTK240N075L2 IXYS IXTK(X)240N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTT140N075L2HV IXTT140N075L2HV IXYS IXTT140N075L2_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
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IXTA230N04T4 IXTA230N04T4 IXYS IXTA(P)230N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4 IXTP230N04T4 IXYS IXTA(P)230N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4M IXTP230N04T4M IXYS IXTP230N04T4M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP24P085T IXTP24P085T IXYS IXT_24P085T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
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IXTK20N150 IXTK20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
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LAA710 LAA710 IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
1+1557.10 грн
10+1373.71 грн
50+1152.12 грн
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LBA716S LBA716S IXYS lba716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+1063.36 грн
10+924.58 грн
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LBA716 LBA716 IXYS LBA716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
1+909.75 грн
10+797.23 грн
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MG1775S-BN4MM IXYS littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXBF20N300 IXBF20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 150W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 34A
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IXBF20N360 IXBF20N360 IXYS IXBF20N360.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Power dissipation: 230W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 220A
Gate-emitter voltage: ±20V
Collector current: 20A
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 Мінімальне замовлення: 300 шт
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CPC1590P IXYS CPC1590.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1590PTR IXYS CPC1590.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
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 Мінімальне замовлення: 1000 шт
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CPC1593G CPC1593G IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1593GS CPC1593GS IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1593GSTR IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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 Мінімальне замовлення: 1000 шт
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MDA72-16N1B MDA72-16N1B IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 113A x2
Kind of package: bulk
Semiconductor structure: common anode; double
Case: TO240AA
Max. forward impulse current: 1.54kA
Max. forward voltage: 1.6V
Type of semiconductor module: diode
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+2928.59 грн
3+2406.11 грн
10+2159.05 грн
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LCB110STR IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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 Мінімальне замовлення: 1000 шт
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DSEC30-06A DSEC30-06A IXYS DSEC30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 271 шт:
термін постачання 14-30 дні (днів)
1+473.62 грн
4+248.76 грн
11+235.18 грн
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DSEC30-06B DSEC30-06B IXYS Littelfuse-Power-Semiconductors-DSEC30-06B-Datasheet?assetguid=afd19e64-74f8-4ee9-aa71-195aeedffb06 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
2+310.87 грн
3+255.55 грн
4+252.16 грн
10+229.23 грн
Мінімальне замовлення: 2 шт
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IXTH12N70X2 IXTH12N70X2 IXYS IXTH12N70X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Gate charge: 19nC
Features of semiconductor devices: ultra junction x-class
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DSA70C200HB DSA70C200HB IXYS DSA70C200HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.79V
Max. forward impulse current: 0.55kA
Power dissipation: 215W
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXBT10N170 IXBT10N170 IXYS IXBH(T)10N170.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 140W
Case: TO268
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
1+675.69 грн
2+516.20 грн
6+488.18 грн
В кошику  од. на суму  грн.
IX4427NTR IX4427NTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)
6+79.55 грн
10+53.49 грн
22+44.40 грн
60+41.94 грн
250+40.50 грн
500+40.33 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IX4427NE IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=67e4d75c-b4a5-4db3-a140-f5f519d719ca Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IX4427NETR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=67e4d75c-b4a5-4db3-a140-f5f519d719ca Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IXFR230N20T IXFR230N20T IXYS IXFR230N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
Case: ISOPLUS247™
Polarisation: unipolar
On-state resistance: 8mΩ
Power dissipation: 600W
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
1+2100.21 грн
3+1755.77 грн
10+1553.70 грн
В кошику  од. на суму  грн.
IXTQ130N20T IXTQ130N20T IXYS IXTQ130N20T_IXTH130N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO3P
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+738.78 грн
3+617.24 грн
10+545.07 грн
30+489.88 грн
В кошику  од. на суму  грн.
IXFN230N20T IXFN230N20T IXYS IXFN230N20T.pdf Category: Transistor modules
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 220A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 630A
Power dissipation: 1090W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTA32N20T IXTA32N20T IXYS IXTA(P)32N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
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CPC5603CTR CPC5603CTR IXYS CPC5603.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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IXBOD1-21R IXBOD1-21R IXYS IXBOD1_v2.pdf Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk
Mounting: THT
Breakover voltage: 2.1kV
Max. load current: 0.9A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x3
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+7150.94 грн
3+5868.40 грн
10+5272.39 грн
В кошику  од. на суму  грн.
IXYH40N65C3H1 IXYH40N65C3H1 IXYS IXYH40N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 206ns
Gate charge: 70nC
Turn-on time: 65ns
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VBO40-08NO6 VBO40-08NO6 IXYS VBO40-08NO6.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.32kA
Case: SOT227B
Version: module
Mechanical mounting: screw
Leads: M4 screws
Electrical mounting: screw
Type of bridge rectifier: single-phase
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
1+2252.90 грн
5+2037.64 грн
В кошику  од. на суму  грн.
IXFK52N100X IXFK52N100X IXYS IXFK(X)52N100X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
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IXFN52N100X IXFN52N100X IXYS IXFN52N100X.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
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IXFX52N100X IXYS littelfuse-discrete-mosfets-ixf-52n100x-datasheet?assetguid=dc55a3c4-8c68-427d-a26d-524403f41306 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA100N04T2-TRL IXTA100N04T2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
LF2388BTR LF2388BTR IXYS LF2388BTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of package: reel; tape
Case: SO20
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
товару немає в наявності
 Мінімальне замовлення: 1500 шт
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IXBOD1-18R IXBOD1-18R IXYS IXBOD1_v2.pdf Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk
Mounting: THT
Breakover voltage: 1.8kV
Max. load current: 1.25A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x2
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+5608.47 грн
В кошику  од. на суму  грн.
MCC200-16io1 IXYS L627.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTQ64N25P IXTQ64N25P IXYS IXTQ64N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXBH14N300HV IXYS media?resourcetype=datasheets&itemid=6643A0D7-67D9-4A4E-8987-B0703E2C517C&filename=Littelfuse-Discrete-IGBTs-BiMOSFET-IXB-14N300HV-Datasheet.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
товару немає в наявності
 Мінімальне замовлення: 300 шт
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PS1201 PS1201 IXYS PS1201.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Switching method: zero voltage switching
Mounting: THT
Operating temperature: -40...85°C
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
1+547.68 грн
В кошику  од. на суму  грн.
IXYL60N450 IXYS IXYL60N450.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
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IXTT360N055T2 IXTT360N055T2 IXYS IXTH(T)360N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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IXTH360N055T2 IXTH360N055T2 IXYS IXTH(T)360N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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MCD162-18io1 MCD162-18io1 IXYS MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+4873.36 грн
В кошику  од. на суму  грн.
IXFA10N60P-TRL
IXFA10N60P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA10N60P media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF
IXTA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Pulsed drain current: 275A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
товару немає в наявності
Мінімальне замовлення: 100 шт
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IXFB110N60P3 IXFB110N60P3.pdf
IXFB110N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Kind of package: tube
Reverse recovery time: 250ns
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IXTT75N10L2 IXT_75N10L2.pdf
IXTT75N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1104.51 грн
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IXTB62N50L IXTB62N50L.pdf
IXTB62N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3423.24 грн
3+2811.94 грн
10+2526.67 грн
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IXTK200N10L2 IXT_200N10L2.pdf
IXTK200N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
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IXTH80N20L IXTH(T)80N20L.pdf
IXTH80N20L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Features of semiconductor devices: linear power mosfet
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IXTT80N20L IXTH(T)80N20L.pdf
IXTT80N20L
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
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IXTX240N075L2 IXTK(X)240N075L2.pdf
IXTX240N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTK240N075L2 IXTK(X)240N075L2.pdf
IXTK240N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTT140N075L2HV IXTT140N075L2_HV.pdf
IXTT140N075L2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
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IXTA230N04T4 IXTA(P)230N04T4.pdf
IXTA230N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4 IXTA(P)230N04T4.pdf
IXTP230N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4M IXTP230N04T4M.pdf
IXTP230N04T4M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP24P085T IXT_24P085T.pdf
IXTP24P085T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
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IXTK20N150 IXTK(X)20N150.pdf
IXTK20N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
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LAA710 LAA710.pdf
LAA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1557.10 грн
10+1373.71 грн
50+1152.12 грн
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LBA716S lba716.pdf
LBA716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1063.36 грн
10+924.58 грн
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LBA716 LBA716.pdf
LBA716
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+909.75 грн
10+797.23 грн
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MG1775S-BN4MM littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXBF20N300 littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf
IXBF20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 150W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 34A
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IXBF20N360 IXBF20N360.pdf
IXBF20N360
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Power dissipation: 230W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 220A
Gate-emitter voltage: ±20V
Collector current: 20A
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Мінімальне замовлення: 300 шт
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CPC1590P CPC1590.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1590PTR CPC1590.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
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Мінімальне замовлення: 1000 шт
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CPC1593G CPC1593.pdf
CPC1593G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1593GS CPC1593.pdf
CPC1593GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1593GSTR CPC1593.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MDA72-16N1B PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDA72-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 113A x2
Kind of package: bulk
Semiconductor structure: common anode; double
Case: TO240AA
Max. forward impulse current: 1.54kA
Max. forward voltage: 1.6V
Type of semiconductor module: diode
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2928.59 грн
3+2406.11 грн
10+2159.05 грн
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LCB110STR LCB110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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Мінімальне замовлення: 1000 шт
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DSEC30-06A DSEC30-06A.pdf
DSEC30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 271 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+473.62 грн
4+248.76 грн
11+235.18 грн
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DSEC30-06B Littelfuse-Power-Semiconductors-DSEC30-06B-Datasheet?assetguid=afd19e64-74f8-4ee9-aa71-195aeedffb06
DSEC30-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+310.87 грн
3+255.55 грн
4+252.16 грн
10+229.23 грн
Мінімальне замовлення: 2 шт
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IXTH12N70X2 IXTH12N70X2.pdf
IXTH12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Gate charge: 19nC
Features of semiconductor devices: ultra junction x-class
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DSA70C200HB DSA70C200HB.pdf
DSA70C200HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.79V
Max. forward impulse current: 0.55kA
Power dissipation: 215W
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXBT10N170 IXBH(T)10N170.pdf
IXBT10N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 140W
Case: TO268
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+675.69 грн
2+516.20 грн
6+488.18 грн
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IX4427NTR IX4426-27-28.pdf
IX4427NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+79.55 грн
10+53.49 грн
22+44.40 грн
60+41.94 грн
250+40.50 грн
500+40.33 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IX4427NE littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=67e4d75c-b4a5-4db3-a140-f5f519d719ca
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IX4427NETR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=67e4d75c-b4a5-4db3-a140-f5f519d719ca
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXFR230N20T IXFR230N20T.pdf
IXFR230N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
Case: ISOPLUS247™
Polarisation: unipolar
On-state resistance: 8mΩ
Power dissipation: 600W
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2100.21 грн
3+1755.77 грн
10+1553.70 грн
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IXTQ130N20T IXTQ130N20T_IXTH130N20T.pdf
IXTQ130N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO3P
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+738.78 грн
3+617.24 грн
10+545.07 грн
30+489.88 грн
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IXFN230N20T IXFN230N20T.pdf
IXFN230N20T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 220A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 630A
Power dissipation: 1090W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTA32N20T IXTA(P)32N20T.pdf
IXTA32N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
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CPC5603CTR CPC5603.pdf
CPC5603CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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IXBOD1-21R IXBOD1_v2.pdf
IXBOD1-21R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk
Mounting: THT
Breakover voltage: 2.1kV
Max. load current: 0.9A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x3
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+7150.94 грн
3+5868.40 грн
10+5272.39 грн
В кошику  од. на суму  грн.
IXYH40N65C3H1 IXYH40N65C3H1.pdf
IXYH40N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 206ns
Gate charge: 70nC
Turn-on time: 65ns
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VBO40-08NO6 VBO40-08NO6.pdf
VBO40-08NO6
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.32kA
Case: SOT227B
Version: module
Mechanical mounting: screw
Leads: M4 screws
Electrical mounting: screw
Type of bridge rectifier: single-phase
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2252.90 грн
5+2037.64 грн
В кошику  од. на суму  грн.
IXFK52N100X IXFK(X)52N100X.pdf
IXFK52N100X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
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IXFN52N100X IXFN52N100X.pdf
IXFN52N100X
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
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IXFX52N100X littelfuse-discrete-mosfets-ixf-52n100x-datasheet?assetguid=dc55a3c4-8c68-427d-a26d-524403f41306
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTA100N04T2-TRL
IXTA100N04T2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
LF2388BTR LF2388BTR.pdf
LF2388BTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of package: reel; tape
Case: SO20
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IXBOD1-18R IXBOD1_v2.pdf
IXBOD1-18R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk
Mounting: THT
Breakover voltage: 1.8kV
Max. load current: 1.25A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x2
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+5608.47 грн
В кошику  од. на суму  грн.
MCC200-16io1 L627.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTQ64N25P IXTQ64N25P-DTE.pdf
IXTQ64N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXBH14N300HV media?resourcetype=datasheets&itemid=6643A0D7-67D9-4A4E-8987-B0703E2C517C&filename=Littelfuse-Discrete-IGBTs-BiMOSFET-IXB-14N300HV-Datasheet.PDF
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
PS1201 PS1201.pdf
PS1201
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Switching method: zero voltage switching
Mounting: THT
Operating temperature: -40...85°C
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+547.68 грн
В кошику  од. на суму  грн.
IXYL60N450 IXYL60N450.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
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IXTT360N055T2 IXTH(T)360N055T2.pdf
IXTT360N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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IXTH360N055T2 IXTH(T)360N055T2.pdf
IXTH360N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
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MCD162-18io1 MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD162-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+4873.36 грн
В кошику  од. на суму  грн.