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MWI450-12E9 IXYS Description: IGBT MODULE 1200V 640A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 640 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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MWI50-12T7T IXYS Description: IGBT MODULE 1200V 80A 270W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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 Мінімальне замовлення: 6 шт
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MWI60-06G6K IXYS MWI60-06G6K.pdf Description: IGBT MODULE 600V 60A 180W E1
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 180 W
Packaging: Box
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
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MWI75-12T7T IXYS MWI75-12T7T.pdf Description: IGBT MOD TRENCH SIX-PACK E3
товару немає в наявності
 Мінімальне замовлення: 6 шт
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MWI75-12T8T IXYS Description: IGBT MODULE 1200V 110A 360W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 360 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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VUB135-22NO1 IXYS media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet Description: BRIDGE RECT 3P 2.2KV 150A E2
Current - Reverse Leakage @ Vr: 100 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
Current - Average Rectified (Io): 150 A
Voltage - Peak Reverse (Max): 2.2 kV
Supplier Device Package: E2
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase (Braking)
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
товару немає в наявності
 Мінімальне замовлення: 6 шт
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IXFH160N15T IXFH160N15T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379 Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXTA10P50P IXTA10P50P IXYS littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 10A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
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IXTA120N04T2 IXTA120N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
300+130.37 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA170N075T2 IXTA170N075T2 IXYS 99970A.pdf Description: MOSFET N-CH 75V 170A TO263
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXTA18P10T IXTA18P10T IXYS littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682 Description: MOSFET P-CH 100V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
300+101.47 грн
Мінімальне замовлення: 300 шт
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IXTA200N055T2 IXTA200N055T2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-200N055T2-Datasheet.PDF?assetguid=B44D58FE-55F9-4C2C-B4B4-13EDAC81DC00 Description: MOSFET N-CH 55V 200A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
1+344.06 грн
50+172.39 грн
100+157.05 грн
500+122.17 грн
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IXTA220N04T2 IXTA220N04T2 IXYS littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a Description: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTA220N04T2-7 IXTA220N04T2-7 IXYS littelfuse-discrete-mosfets-ixta220n04t2-7-datasheet?assetguid=14879344-6afc-4a13-b7a9-eca221b2b9ae Description: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
300+248.91 грн
Мінімальне замовлення: 300 шт
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IXTA28P065T IXTA28P065T IXYS DS99968B(IXTA-TP28P065T).pdf Description: MOSFET P-CH 65V 28A TO-263
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTA32N20T IXTA32N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 32A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA48N20T IXTA48N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_48n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 48A TO263
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
2+306.86 грн
10+248.64 грн
100+201.17 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA70N075T2 IXTA70N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 70A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXTA90N075T2 IXTA90N075T2 IXYS littelfuse-discrete-mosfets-ixt-90n075t2-datasheet?assetguid=4d4fcb19-8221-44b3-8493-7ff79dcb0d2d Description: MOSFET N-CH 75V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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IXTA96P085T IXTA96P085T IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 3741 шт:
термін постачання 21-31 дні (днів)
1+607.53 грн
50+319.73 грн
100+294.17 грн
500+234.07 грн
1000+224.72 грн
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IXTH26P20P IXTH26P20P IXYS IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
1+499.04 грн
30+275.13 грн
120+239.25 грн
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IXTH44P15T IXTH44P15T IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 715 шт:
термін постачання 21-31 дні (днів)
1+717.56 грн
30+409.34 грн
120+347.48 грн
510+283.57 грн
В кошику  од. на суму  грн.
IXTK40P50P IXTK40P50P IXYS littelfuse-discrete-mosfets-ixt-40p50p-datasheet?assetguid=e34ee140-6c7c-4026-98f4-4b32d9d0efc6 Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1318 шт:
термін постачання 21-31 дні (днів)
1+1779.19 грн
25+1120.27 грн
100+979.71 грн
500+904.44 грн
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IXTN170P10P IXTN170P10P IXYS littelfuse-discrete-mosfets-ixtn170p10p-datasheet?assetguid=a5324887-08b2-496a-afd1-beb2354decfc Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
1+2828.41 грн
10+2035.21 грн
100+1764.60 грн
В кошику  од. на суму  грн.
IXTN32P60P IXTN32P60P IXYS DS99991(IXTN32P60P).pdf Description: MOSFET P-CH 600V 32A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+2767.20 грн
10+2457.71 грн
100+2098.72 грн
В кошику  од. на суму  грн.
IXTN90P20P IXTN90P20P IXYS littelfuse-discrete-mosfets-ixtn90p20p-datasheet?assetguid=86257c2d-7709-4444-8d3f-31234f9a495d Description: MOSFET P-CH 200V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
1+2828.41 грн
10+2035.21 грн
100+1764.60 грн
В кошику  од. на суму  грн.
IXTP100N04T2 IXTP100N04T2 IXYS littelfuse-discrete-mosfets-ixt-100n04t2-datasheet?assetguid=02e31e74-04cd-4eee-96d9-15909abc1070 Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
2+244.10 грн
50+118.42 грн
100+107.08 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP102N15T IXTP102N15T IXYS DS99661B(IXTA-TH-TP-TQ102N15T).pdf Description: MOSFET N-CH 150V 102A TO-220
товару немає в наявності
 Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
IXTP110N055T2 IXTP110N055T2 IXYS littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a Description: MOSFET N-CH 55V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 216 шт:
термін постачання 21-31 дні (днів)
2+248.75 грн
50+121.38 грн
100+109.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP120N04T2 IXTP120N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
300+133.57 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP200N055T2 IXTP200N055T2 IXYS DS99919B(IXTA-TP200N055T2).pdf Description: MOSFET N-CH 55V 200A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
1+314.61 грн
10+272.14 грн
100+222.94 грн
В кошику  од. на суму  грн.
IXTP220N04T2 IXTP220N04T2 IXYS littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a Description: MOSFET N-CH 40V 220A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
1+326.24 грн
50+163.11 грн
100+148.50 грн
В кошику  од. на суму  грн.
IXTP24P085T IXTP24P085T IXYS littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98 Description: MOSFET P-CH 85V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)
2+247.20 грн
50+119.92 грн
100+108.42 грн
500+82.86 грн
1000+76.78 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP32N20T IXTP32N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
товару немає в наявності
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IXTP48N20T IXTP48N20T IXYS littelfuse-discrete-mosfets-ixt-48n20t-datasheet?assetguid=9a6a99bb-4eea-403f-a331-1f20aca73a17 Description: MOSFET N-CH 200V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
1+340.96 грн
50+171.03 грн
100+155.78 грн
500+121.15 грн
В кошику  од. на суму  грн.
IXTP52P10P IXTP52P10P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B Description: MOSFET P-CH 100V 52A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+499.04 грн
50+257.77 грн
100+239.07 грн
В кошику  од. на суму  грн.
IXTP76P10T IXTP76P10T IXYS littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a Description: MOSFET P-CH 100V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 5642 шт:
термін постачання 21-31 дні (днів)
1+594.35 грн
50+312.14 грн
100+287.05 грн
500+228.19 грн
1000+218.29 грн
В кошику  од. на суму  грн.
IXTP90N055T2 IXTP90N055T2 IXYS littelfuse-discrete-mosfets-ixt-90n055t2-datasheet?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6 Description: MOSFET N-CH 55V 90A TO220AB
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
товару немає в наявності
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IXTP96P085T IXTP96P085T IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 4608 шт:
термін постачання 21-31 дні (днів)
1+537.79 грн
50+279.28 грн
100+256.31 грн
500+202.82 грн
1000+190.71 грн
2000+190.68 грн
В кошику  од. на суму  грн.
IXTQ102N15T IXTQ102N15T IXYS DS99661B(IXTA-TH-TP-TQ102N15T).pdf Description: MOSFET N-CH 150V 102A TO-3P
товару немає в наявності
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IXTQ44P15T IXTQ44P15T IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 1535 шт:
термін постачання 21-31 дні (днів)
1+544.76 грн
30+305.42 грн
120+257.29 грн
510+213.34 грн
В кошику  од. на суму  грн.
IXTR16P60P IXTR16P60P IXYS DS99989(IXTR16P60P).pdf Description: MOSFET P-CH 600V 10A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTR40P50P IXTR40P50P IXYS littelfuse_discrete_mosfets_p-channel_ixtr40p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
30+1591.97 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTR48P20P IXTR48P20P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXTR48P20P-Datasheet.PDF?assetguid=B87E3A50-EF94-4FF7-A731-EE21735ACBE0 Description: MOSFET P-CH 200V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 24A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
товару немає в наявності
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IXTR90P10P IXTR90P10P IXYS DS99985B(IXTR90P10P).pdf Description: MOSFET P-CH 100V 57A ISOPLUS247
товару немає в наявності
 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTR90P20P IXTR90P20P IXYS DS99932D(IXTR90P20P).pdf Description: MOSFET P-CH 200V 53A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTT20P50P IXTT20P50P IXYS littelfuse_discrete_mosfets_p-channel_ixt_20p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
товару немає в наявності
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IXTU12N06T IXTU12N06T IXYS 99947.pdf Description: MOSFET N-CH 60V 12A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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IXTX170P10P IXTX170P10P IXYS littelfuse_discrete_mosfets_p-channel_ixt_170p10p_datasheet.pdf.pdf Description: MOSFET P-CH 100V 170A PLUS247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: P-Channel
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
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IXTY12N06T IXTY12N06T IXYS Description: MOSFET N-CH 60V 12A TO252
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IXFH10N100P IXFH10N100P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH10N100P-Datasheet.PDF?assetguid=F56FE1FE-00DB-4E83-8962-198281A7CDD4 Description: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
1+593.58 грн
30+335.27 грн
120+283.44 грн
510+239.28 грн
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IXGA20N120A3 IXGA20N120A3 IXYS littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac Description: IGBT PT 1200V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
1+534.69 грн
50+279.93 грн
100+257.31 грн
500+208.16 грн
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IXGH20N120A3 IXGH20N120A3 IXYS littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac Description: IGBT PT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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IXGP20N120A3 IXGP20N120A3 IXYS littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac Description: IGBT PT 1200V 40A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
1+616.05 грн
50+324.11 грн
100+298.19 грн
500+237.27 грн
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IXGA24N120C3 IXGA24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IXGH24N120C3 IXGH24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT PT 1200V 48A TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
Switching Energy: 1.16mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)
1+787.31 грн
10+524.21 грн
100+392.03 грн
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IXGH24N120C3H1 IXGH24N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixgh24n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO247AD
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
Switching Energy: 1.16mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Reverse Recovery Time (trr): 70 ns
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IXGP24N120C3 IXGP24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO220
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
Switching Energy: 1.16mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGR24N120C3D1 IXGR24N120C3D1 IXYS Description: IGBT PT 1200V 48A ISOPLUS247
Switching Energy: 1.37mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Reverse Recovery Time (trr): 220 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS media?resourcetype=datasheets&itemid=B3091E49-E491-45F2-ADC2-A1CE1973BBF7&filename=Littelfuse-Discrete-IGBTs-PT-IXGH30N120C3H1-Datasheet.PDF Description: IGBT PT 1200V 48A TO-247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Part Status: Active
Gate Charge: 80 nC
Test Condition: 600V, 24A, 5Ohm, 15V
Switching Energy: 1.45mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 18ns/106ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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 Мінімальне замовлення: 300 шт
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MWI450-12E9
Виробник: IXYS
Description: IGBT MODULE 1200V 640A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 640 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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MWI50-12T7T
Виробник: IXYS
Description: IGBT MODULE 1200V 80A 270W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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MWI60-06G6K MWI60-06G6K.pdf
Виробник: IXYS
Description: IGBT MODULE 600V 60A 180W E1
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 180 W
Packaging: Box
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
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MWI75-12T7T MWI75-12T7T.pdf
Виробник: IXYS
Description: IGBT MOD TRENCH SIX-PACK E3
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Мінімальне замовлення: 6 шт
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MWI75-12T8T
Виробник: IXYS
Description: IGBT MODULE 1200V 110A 360W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 360 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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VUB135-22NO1 media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet
Виробник: IXYS
Description: BRIDGE RECT 3P 2.2KV 150A E2
Current - Reverse Leakage @ Vr: 100 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
Current - Average Rectified (Io): 150 A
Voltage - Peak Reverse (Max): 2.2 kV
Supplier Device Package: E2
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase (Braking)
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
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Мінімальне замовлення: 6 шт
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IXFH160N15T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379
IXFH160N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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Мінімальне замовлення: 30 шт
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IXTA10P50P littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf
IXTA10P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
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IXTA120N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf
IXTA120N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+130.37 грн
Мінімальне замовлення: 300 шт
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IXTA170N075T2 99970A.pdf
IXTA170N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 170A TO263
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 50 шт
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IXTA18P10T littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682
IXTA18P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+101.47 грн
Мінімальне замовлення: 300 шт
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IXTA200N055T2 Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-200N055T2-Datasheet.PDF?assetguid=B44D58FE-55F9-4C2C-B4B4-13EDAC81DC00
IXTA200N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 200A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+344.06 грн
50+172.39 грн
100+157.05 грн
500+122.17 грн
В кошику  од. на суму  грн.
IXTA220N04T2 littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a
IXTA220N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA220N04T2-7 littelfuse-discrete-mosfets-ixta220n04t2-7-datasheet?assetguid=14879344-6afc-4a13-b7a9-eca221b2b9ae
IXTA220N04T2-7
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+248.91 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA28P065T DS99968B(IXTA-TP28P065T).pdf
IXTA28P065T
Виробник: IXYS
Description: MOSFET P-CH 65V 28A TO-263
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTA32N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf
IXTA32N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 32A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IXTA48N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_48n20t_datasheet.pdf.pdf
IXTA48N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO263
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+306.86 грн
10+248.64 грн
100+201.17 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA70N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf
IXTA70N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 70A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXTA90N075T2 littelfuse-discrete-mosfets-ixt-90n075t2-datasheet?assetguid=4d4fcb19-8221-44b3-8493-7ff79dcb0d2d
IXTA90N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA96P085T littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTA96P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 3741 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+607.53 грн
50+319.73 грн
100+294.17 грн
500+234.07 грн
1000+224.72 грн
В кошику  од. на суму  грн.
IXTH26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTH26P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+499.04 грн
30+275.13 грн
120+239.25 грн
В кошику  од. на суму  грн.
IXTH44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTH44P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 715 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+717.56 грн
30+409.34 грн
120+347.48 грн
510+283.57 грн
В кошику  од. на суму  грн.
IXTK40P50P littelfuse-discrete-mosfets-ixt-40p50p-datasheet?assetguid=e34ee140-6c7c-4026-98f4-4b32d9d0efc6
IXTK40P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1318 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1779.19 грн
25+1120.27 грн
100+979.71 грн
500+904.44 грн
В кошику  од. на суму  грн.
IXTN170P10P littelfuse-discrete-mosfets-ixtn170p10p-datasheet?assetguid=a5324887-08b2-496a-afd1-beb2354decfc
IXTN170P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2828.41 грн
10+2035.21 грн
100+1764.60 грн
В кошику  од. на суму  грн.
IXTN32P60P DS99991(IXTN32P60P).pdf
IXTN32P60P
Виробник: IXYS
Description: MOSFET P-CH 600V 32A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2767.20 грн
10+2457.71 грн
100+2098.72 грн
В кошику  од. на суму  грн.
IXTN90P20P littelfuse-discrete-mosfets-ixtn90p20p-datasheet?assetguid=86257c2d-7709-4444-8d3f-31234f9a495d
IXTN90P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2828.41 грн
10+2035.21 грн
100+1764.60 грн
В кошику  од. на суму  грн.
IXTP100N04T2 littelfuse-discrete-mosfets-ixt-100n04t2-datasheet?assetguid=02e31e74-04cd-4eee-96d9-15909abc1070
IXTP100N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+244.10 грн
50+118.42 грн
100+107.08 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP102N15T DS99661B(IXTA-TH-TP-TQ102N15T).pdf
IXTP102N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 102A TO-220
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
IXTP110N055T2 littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a
IXTP110N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 216 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+248.75 грн
50+121.38 грн
100+109.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP120N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf
IXTP120N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+133.57 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP200N055T2 DS99919B(IXTA-TP200N055T2).pdf
IXTP200N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 200A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+314.61 грн
10+272.14 грн
100+222.94 грн
В кошику  од. на суму  грн.
IXTP220N04T2 littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a
IXTP220N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+326.24 грн
50+163.11 грн
100+148.50 грн
В кошику  од. на суму  грн.
IXTP24P085T littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98
IXTP24P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+247.20 грн
50+119.92 грн
100+108.42 грн
500+82.86 грн
1000+76.78 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP32N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf
IXTP32N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
товару немає в наявності
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IXTP48N20T littelfuse-discrete-mosfets-ixt-48n20t-datasheet?assetguid=9a6a99bb-4eea-403f-a331-1f20aca73a17
IXTP48N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+340.96 грн
50+171.03 грн
100+155.78 грн
500+121.15 грн
В кошику  од. на суму  грн.
IXTP52P10P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B
IXTP52P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 52A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+499.04 грн
50+257.77 грн
100+239.07 грн
В кошику  од. на суму  грн.
IXTP76P10T littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a
IXTP76P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 5642 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+594.35 грн
50+312.14 грн
100+287.05 грн
500+228.19 грн
1000+218.29 грн
В кошику  од. на суму  грн.
IXTP90N055T2 littelfuse-discrete-mosfets-ixt-90n055t2-datasheet?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6
IXTP90N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 90A TO220AB
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
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IXTP96P085T littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTP96P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 4608 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+537.79 грн
50+279.28 грн
100+256.31 грн
500+202.82 грн
1000+190.71 грн
2000+190.68 грн
В кошику  од. на суму  грн.
IXTQ102N15T DS99661B(IXTA-TH-TP-TQ102N15T).pdf
IXTQ102N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 102A TO-3P
товару немає в наявності
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IXTQ44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTQ44P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 1535 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+544.76 грн
30+305.42 грн
120+257.29 грн
510+213.34 грн
В кошику  од. на суму  грн.
IXTR16P60P DS99989(IXTR16P60P).pdf
IXTR16P60P
Виробник: IXYS
Description: MOSFET P-CH 600V 10A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTR40P50P littelfuse_discrete_mosfets_p-channel_ixtr40p50p_datasheet.pdf.pdf
IXTR40P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
30+1591.97 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTR48P20P Littelfuse-Discrete-MOSFETs-P-Channel-IXTR48P20P-Datasheet.PDF?assetguid=B87E3A50-EF94-4FF7-A731-EE21735ACBE0
IXTR48P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 24A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXTR90P10P DS99985B(IXTR90P10P).pdf
IXTR90P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 57A ISOPLUS247
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTR90P20P DS99932D(IXTR90P20P).pdf
IXTR90P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 53A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTT20P50P littelfuse_discrete_mosfets_p-channel_ixt_20p50p_datasheet.pdf.pdf
IXTT20P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
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IXTU12N06T 99947.pdf
IXTU12N06T
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товару немає в наявності
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IXTX170P10P littelfuse_discrete_mosfets_p-channel_ixt_170p10p_datasheet.pdf.pdf
IXTX170P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 170A PLUS247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: P-Channel
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1459.93 грн
30+1165.53 грн
В кошику  од. на суму  грн.
IXTY12N06T
IXTY12N06T
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
IXFH10N100P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH10N100P-Datasheet.PDF?assetguid=F56FE1FE-00DB-4E83-8962-198281A7CDD4
IXFH10N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+593.58 грн
30+335.27 грн
120+283.44 грн
510+239.28 грн
В кошику  од. на суму  грн.
IXGA20N120A3 littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac
IXGA20N120A3
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+534.69 грн
50+279.93 грн
100+257.31 грн
500+208.16 грн
В кошику  од. на суму  грн.
IXGH20N120A3 littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac
IXGH20N120A3
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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IXGP20N120A3 littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac
IXGP20N120A3
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+616.05 грн
50+324.11 грн
100+298.19 грн
500+237.27 грн
В кошику  од. на суму  грн.
IXGA24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGA24N120C3
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товару немає в наявності
В кошику  од. на суму  грн.
IXGH24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGH24N120C3
Виробник: IXYS
Description: IGBT PT 1200V 48A TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
Switching Energy: 1.16mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+787.31 грн
10+524.21 грн
100+392.03 грн
В кошику  од. на суму  грн.
IXGH24N120C3H1 littelfuse_discrete_igbts_pt_ixgh24n120c3h1_datasheet.pdf.pdf
IXGH24N120C3H1
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO247AD
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
Switching Energy: 1.16mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Reverse Recovery Time (trr): 70 ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGP24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGP24N120C3
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO220
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
Switching Energy: 1.16mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGR24N120C3D1
IXGR24N120C3D1
Виробник: IXYS
Description: IGBT PT 1200V 48A ISOPLUS247
Switching Energy: 1.37mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 16ns/93ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Reverse Recovery Time (trr): 220 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 600V, 20A, 5Ohm, 15V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGH30N120C3H1 media?resourcetype=datasheets&itemid=B3091E49-E491-45F2-ADC2-A1CE1973BBF7&filename=Littelfuse-Discrete-IGBTs-PT-IXGH30N120C3H1-Datasheet.PDF
IXGH30N120C3H1
Виробник: IXYS
Description: IGBT PT 1200V 48A TO-247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Part Status: Active
Gate Charge: 80 nC
Test Condition: 600V, 24A, 5Ohm, 15V
Switching Energy: 1.45mJ (on), 470µJ (off)
Td (on/off) @ 25°C: 18ns/106ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
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