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IXTP220N04T2 IXTP220N04T2 IXYS littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a Description: MOSFET N-CH 40V 220A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
1+330.98 грн
50+165.48 грн
100+150.66 грн
В кошику  од. на суму  грн.
IXTP24P085T IXTP24P085T IXYS littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98 Description: MOSFET P-CH 85V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)
2+250.79 грн
50+121.66 грн
100+110.00 грн
500+84.06 грн
1000+77.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP32N20T IXTP32N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
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IXTP48N20T IXTP48N20T IXYS littelfuse-discrete-mosfets-ixt-48n20t-datasheet?assetguid=9a6a99bb-4eea-403f-a331-1f20aca73a17 Description: MOSFET N-CH 200V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
1+345.92 грн
50+173.52 грн
100+158.04 грн
500+122.91 грн
В кошику  од. на суму  грн.
IXTP52P10P IXTP52P10P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B Description: MOSFET P-CH 100V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+506.30 грн
50+261.52 грн
100+242.55 грн
В кошику  од. на суму  грн.
IXTP90N055T2 IXTP90N055T2 IXYS littelfuse-discrete-mosfets-ixt-90n055t2-datasheet?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6 Description: MOSFET N-CH 55V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
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IXTP96P085T IXTP96P085T IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 4608 шт:
термін постачання 21-31 дні (днів)
1+545.61 грн
50+283.34 грн
100+260.04 грн
500+205.77 грн
1000+193.49 грн
2000+193.46 грн
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IXTQ102N15T IXTQ102N15T IXYS DS99661B(IXTA-TH-TP-TQ102N15T).pdf Description: MOSFET N-CH 150V 102A TO-3P
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IXTQ44P15T IXTQ44P15T IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 1535 шт:
термін постачання 21-31 дні (днів)
1+552.68 грн
30+309.86 грн
120+261.03 грн
510+216.44 грн
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IXTR16P60P IXTR16P60P IXYS DS99989(IXTR16P60P).pdf Description: MOSFET P-CH 600V 10A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTR40P50P IXTR40P50P IXYS littelfuse_discrete_mosfets_p-channel_ixtr40p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
30+1615.12 грн
Мінімальне замовлення: 30
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IXTR48P20P IXTR48P20P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXTR48P20P-Datasheet.PDF?assetguid=B87E3A50-EF94-4FF7-A731-EE21735ACBE0 Description: MOSFET P-CH 200V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 24A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXTR90P10P IXTR90P10P IXYS DS99985B(IXTR90P10P).pdf Description: MOSFET P-CH 100V 57A ISOPLUS247
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IXTR90P20P IXTR90P20P IXYS DS99932D(IXTR90P20P).pdf Description: MOSFET P-CH 200V 53A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
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IXTT20P50P IXTT20P50P IXYS littelfuse_discrete_mosfets_p-channel_ixt_20p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
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IXTU12N06T IXTU12N06T IXYS 99947.pdf Description: MOSFET N-CH 60V 12A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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IXTX170P10P IXTX170P10P IXYS littelfuse_discrete_mosfets_p-channel_ixt_170p10p_datasheet.pdf.pdf Description: MOSFET P-CH 100V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
1+1481.16 грн
30+1182.48 грн
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IXTY12N06T IXTY12N06T IXYS Description: MOSFET N-CH 60V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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IXFH10N100P IXFH10N100P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH10N100P-Datasheet.PDF?assetguid=F56FE1FE-00DB-4E83-8962-198281A7CDD4 Description: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
1+602.21 грн
30+340.15 грн
120+287.56 грн
510+242.76 грн
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IXGA20N120A3 IXGA20N120A3 IXYS littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac Description: IGBT PT 1200V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
1+542.46 грн
50+284.00 грн
100+261.05 грн
500+211.18 грн
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IXGH20N120A3 IXGH20N120A3 IXYS littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac Description: IGBT PT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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IXGP20N120A3 IXGP20N120A3 IXYS littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac Description: IGBT PT 1200V 40A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
1+551.90 грн
50+287.55 грн
100+264.01 грн
500+209.11 грн
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IXGA24N120C3 IXGA24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IXGH24N120C3 IXGH24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT PT 1200V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)
1+798.76 грн
10+531.83 грн
100+397.73 грн
В кошику  од. на суму  грн.
IXGH24N120C3H1 IXGH24N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixgh24n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IXGP24N120C3 IXGP24N120C3 IXYS littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf Description: IGBT 1200V 48A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товару немає в наявності
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IXGR24N120C3D1 IXGR24N120C3D1 IXYS Description: IGBT PT 1200V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.37mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 200 W
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS media?resourcetype=datasheets&itemid=B3091E49-E491-45F2-ADC2-A1CE1973BBF7&filename=Littelfuse-Discrete-IGBTs-PT-IXGH30N120C3H1-Datasheet.PDF Description: IGBT PT 1200V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
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IXGA30N120B3 IXGA30N120B3 IXYS littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64 Description: IGBT PT 1200V 60A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
1+750.80 грн
50+405.78 грн
100+375.28 грн
500+323.75 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGP30N120B3 IXYS littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64 Description: IGBT PT 1200V 60A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
1+733.50 грн
50+394.78 грн
100+364.83 грн
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IXGT32N120A3 IXGT32N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_32n120a3_datasheet.pdf.pdf Description: IGBT PT 1200V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
1+595.92 грн
30+398.36 грн
В кошику  од. на суму  грн.
IXGH40N120C3 IXGH40N120C3 IXYS littelfuse_discrete_igbts_pt_ixgh40n120c3_datasheet.pdf.pdf Description: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
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IXGH40N120C3D1 IXGH40N120C3D1 IXYS littelfuse-discrete-igbts-ixgh40n120c3d1-datasheet?assetguid=464a9b07-f2ac-4c4a-a7fa-3d84393cb5aa Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
на замовлення 861 шт:
термін постачання 21-31 дні (днів)
1+1276.75 грн
30+764.76 грн
120+663.03 грн
510+595.23 грн
В кошику  од. на суму  грн.
IXGH50N120C3 IXGH50N120C3 IXYS littelfuse-discrete-igbts-ixgh50n120c3-datasheet?assetguid=301d9315-d6d7-4c44-85fa-549d9b9590b6 Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/123ns
Switching Energy: 2.2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 460 W
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IXGK120N120A3 IXGK120N120A3 IXYS littelfuse-discrete-igbts-ixg-120n120a3-datasheet?assetguid=d09aaf82-98c1-4c5a-8663-fac559d40986 Description: IGBT PT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+3310.59 грн
25+2272.66 грн
В кошику  од. на суму  грн.
IXGX120N120A3 IXGX120N120A3 IXYS littelfuse-discrete-igbts-ixg-120n120a3-datasheet?assetguid=d09aaf82-98c1-4c5a-8663-fac559d40986 Description: IGBT PT 1200V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
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DPG30I300HA DPG30I300HA IXYS media?resourcetype=datasheets&itemid=63779446-FB19-46A8-98FA-0405CBC10C47&filename=Littelfuse-Power-Semiconductors-DPG30I300HA-Datasheet Description: DIODE GEN PURP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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IXTK140N30P IXTK140N30P IXYS a Description: MOSFET N-CH 300V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
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CS19-08ho1S-TUBE CS19-08ho1S-TUBE IXYS CS19-08ho1.pdf Description: THYRISTOR PHASE 19A 800V TO-263
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CS19-12ho1S-TUBE CS19-12ho1S-TUBE IXYS CS19-08ho1.pdf Description: THYRISTOR PHASE 19A 1200V TO-263
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CS20-25mo1F CS20-25mo1F IXYS Littelfuse-Power-Semiconductors-CS20-25mo1F-Datasheet?assetguid=56e0d098-377c-453d-a3a9-172adaef3ec0 Description: SCR 2.5KV ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Off State: 2.5 kV
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+2976.46 грн
25+1982.34 грн
В кошику  од. на суму  грн.
DFE10I600PM DFE10I600PM IXYS DFE10I600PM.pdf Description: DIODE GP 600V 10A TO220ACFP
на замовлення 3820 шт:
термін постачання 21-31 дні (днів)
2+159.59 грн
10+138.16 грн
100+111.05 грн
500+85.62 грн
1000+71.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DGS10-018AS-TUBE DGS10-018AS-TUBE IXYS DGS10-018A,AS,%20DGSK20-018A.pdf Description: DIODE SCHOTTKY 180V 15A TO263AB
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DGS20-018AS-TUBE DGS20-018AS-TUBE IXYS DGS,DGSK%2020,40-018A,%20AS.pdf Description: DIODE SCHOTTKY 180V 23A TO263AB
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DGSK20-025AS-TUBE DGSK20-025AS-TUBE IXYS DGS,DGSK%209,%2010,%2020-025A,AS.pdf Description: DIODE ARRAY SCHOTTKY 250V TO263
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DHF30IM600PN IXYS DHF30IM600PN.pdf Description: DIODE GP 600V 15A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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DHF30IM600QB DHF30IM600QB IXYS DHF30IM600QB.pdf Description: DIODE GEN PURP 600V 30A TO3P
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DHG100X1200NA DHG100X1200NA IXYS DHG100X1200NA.pdf Description: DIODE MODULE 1.2KV 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.16 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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DHG100X600NA DHG100X600NA IXYS media?resourcetype=datasheets&itemid=0b01c02e-98f7-4b7a-816c-32a0b6b478f6&filename=littelfuse%2520power%2520semiconductors%2520dhg100x600na%2520datasheet.pdf Description: DIODE MOD GP 600V 100A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 600 V
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DHG50X1200NA DHG50X1200NA IXYS DHG50X1200NA.pdf Description: DIODE MODULE 1.2KV 25A SOT227B
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DHG50X600NA DHG50X600NA IXYS Description: DIODE MODULE GP 600V 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 600 V
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DHG60I1200HA DHG60I1200HA IXYS DHG60I1200HA.pdf Description: DIODE GEN PURP 1.2KV 60A TO247AD
на замовлення 2280 шт:
термін постачання 21-31 дні (днів)
30+619.80 грн
Мінімальне замовлення: 30
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DHG60I600HA DHG60I600HA IXYS media?resourcetype=datasheets&itemid=92842a9a-89dc-40c1-bf19-39534a9da6a1&filename=littelfuse%2520power%2520semiconductors%2520dhg60i600ha%2520datasheet.pdf Description: DIODE STANDARD 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
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DLA20IM800PC-TRL DLA20IM800PC-TRL IXYS DLA20IM800PC.pdf Description: DIODE GEN PURP 800V 20A TO263
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DPF120X400NA IXYS Description: DIODE MODULE 400V 120A SOT227B
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DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Description: DIODE ARRAY 200V 120A SOT227B
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DPF400C400NB IXYS Description: DIODE MODULE 400V 400A SOT227B
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DPF60C200HB DPF60C200HB IXYS Description: DIODE ARRAY GP 200V 60A TO247AD
на замовлення 4350 шт:
термін постачання 21-31 дні (днів)
1+500.79 грн
10+432.96 грн
100+354.74 грн
500+283.40 грн
1000+239.33 грн
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DPF60I200HA DPF60I200HA IXYS Description: DIODE ARRAY GP 200V 60A TO247AD
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DPF60XA400NA IXYS Description: DIODE MODULE 400V 60A SOT227B
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IXTP220N04T2 littelfuse-discrete-mosfets-ixt-220n04t2-datasheet?assetguid=e899b100-270e-42ae-bac4-64df6dabba7a
IXTP220N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+330.98 грн
50+165.48 грн
100+150.66 грн
В кошику  од. на суму  грн.
IXTP24P085T littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98
IXTP24P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+250.79 грн
50+121.66 грн
100+110.00 грн
500+84.06 грн
1000+77.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP32N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf
IXTP32N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
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IXTP48N20T littelfuse-discrete-mosfets-ixt-48n20t-datasheet?assetguid=9a6a99bb-4eea-403f-a331-1f20aca73a17
IXTP48N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+345.92 грн
50+173.52 грн
100+158.04 грн
500+122.91 грн
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IXTP52P10P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B
IXTP52P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+506.30 грн
50+261.52 грн
100+242.55 грн
В кошику  од. на суму  грн.
IXTP90N055T2 littelfuse-discrete-mosfets-ixt-90n055t2-datasheet?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6
IXTP90N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
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IXTP96P085T littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTP96P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 96A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 4608 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+545.61 грн
50+283.34 грн
100+260.04 грн
500+205.77 грн
1000+193.49 грн
2000+193.46 грн
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IXTQ102N15T DS99661B(IXTA-TH-TP-TQ102N15T).pdf
IXTQ102N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 102A TO-3P
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IXTQ44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTQ44P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 1535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+552.68 грн
30+309.86 грн
120+261.03 грн
510+216.44 грн
В кошику  од. на суму  грн.
IXTR16P60P DS99989(IXTR16P60P).pdf
IXTR16P60P
Виробник: IXYS
Description: MOSFET P-CH 600V 10A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
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IXTR40P50P littelfuse_discrete_mosfets_p-channel_ixtr40p50p_datasheet.pdf.pdf
IXTR40P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+1615.12 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IXTR48P20P Littelfuse-Discrete-MOSFETs-P-Channel-IXTR48P20P-Datasheet.PDF?assetguid=B87E3A50-EF94-4FF7-A731-EE21735ACBE0
IXTR48P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 24A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXTR90P10P DS99985B(IXTR90P10P).pdf
IXTR90P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 57A ISOPLUS247
товару немає в наявності
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IXTR90P20P DS99932D(IXTR90P20P).pdf
IXTR90P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 53A ISOPLUS247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
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IXTT20P50P littelfuse_discrete_mosfets_p-channel_ixt_20p50p_datasheet.pdf.pdf
IXTT20P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
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IXTU12N06T 99947.pdf
IXTU12N06T
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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IXTX170P10P littelfuse_discrete_mosfets_p-channel_ixt_170p10p_datasheet.pdf.pdf
IXTX170P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1481.16 грн
30+1182.48 грн
В кошику  од. на суму  грн.
IXTY12N06T
IXTY12N06T
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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IXFH10N100P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH10N100P-Datasheet.PDF?assetguid=F56FE1FE-00DB-4E83-8962-198281A7CDD4
IXFH10N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+602.21 грн
30+340.15 грн
120+287.56 грн
510+242.76 грн
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IXGA20N120A3 littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac
IXGA20N120A3
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+542.46 грн
50+284.00 грн
100+261.05 грн
500+211.18 грн
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IXGH20N120A3 littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac
IXGH20N120A3
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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IXGP20N120A3 littelfuse-discrete-igbts-ixg-20n120a3-datasheet?assetguid=06a9f4bd-9bf8-42b7-93fd-ad79977369ac
IXGP20N120A3
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+551.90 грн
50+287.55 грн
100+264.01 грн
500+209.11 грн
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IXGA24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGA24N120C3
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IXGH24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGH24N120C3
Виробник: IXYS
Description: IGBT PT 1200V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+798.76 грн
10+531.83 грн
100+397.73 грн
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IXGH24N120C3H1 littelfuse_discrete_igbts_pt_ixgh24n120c3h1_datasheet.pdf.pdf
IXGH24N120C3H1
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IXGP24N120C3 littelfuse_discrete_igbts_pt_ixg_24n120c3_datasheet.pdf.pdf
IXGP24N120C3
Виробник: IXYS
Description: IGBT 1200V 48A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IXGR24N120C3D1
IXGR24N120C3D1
Виробник: IXYS
Description: IGBT PT 1200V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.37mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 200 W
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IXGH30N120C3H1 media?resourcetype=datasheets&itemid=B3091E49-E491-45F2-ADC2-A1CE1973BBF7&filename=Littelfuse-Discrete-IGBTs-PT-IXGH30N120C3H1-Datasheet.PDF
IXGH30N120C3H1
Виробник: IXYS
Description: IGBT PT 1200V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
товару немає в наявності
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IXGA30N120B3 littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64
IXGA30N120B3
Виробник: IXYS
Description: IGBT PT 1200V 60A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+750.80 грн
50+405.78 грн
100+375.28 грн
500+323.75 грн
В кошику  од. на суму  грн.
IXGP30N120B3 littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64
IXGP30N120B3
Виробник: IXYS
Description: IGBT PT 1200V 60A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+733.50 грн
50+394.78 грн
100+364.83 грн
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IXGT32N120A3 littelfuse_discrete_igbts_pt_ixg_32n120a3_datasheet.pdf.pdf
IXGT32N120A3
Виробник: IXYS
Description: IGBT PT 1200V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+595.92 грн
30+398.36 грн
В кошику  од. на суму  грн.
IXGH40N120C3 littelfuse_discrete_igbts_pt_ixgh40n120c3_datasheet.pdf.pdf
IXGH40N120C3
Виробник: IXYS
Description: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
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IXGH40N120C3D1 littelfuse-discrete-igbts-ixgh40n120c3d1-datasheet?assetguid=464a9b07-f2ac-4c4a-a7fa-3d84393cb5aa
IXGH40N120C3D1
Виробник: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
на замовлення 861 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1276.75 грн
30+764.76 грн
120+663.03 грн
510+595.23 грн
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IXGH50N120C3 littelfuse-discrete-igbts-ixgh50n120c3-datasheet?assetguid=301d9315-d6d7-4c44-85fa-549d9b9590b6
IXGH50N120C3
Виробник: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/123ns
Switching Energy: 2.2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 460 W
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IXGK120N120A3 littelfuse-discrete-igbts-ixg-120n120a3-datasheet?assetguid=d09aaf82-98c1-4c5a-8663-fac559d40986
IXGK120N120A3
Виробник: IXYS
Description: IGBT PT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3310.59 грн
25+2272.66 грн
В кошику  од. на суму  грн.
IXGX120N120A3 littelfuse-discrete-igbts-ixg-120n120a3-datasheet?assetguid=d09aaf82-98c1-4c5a-8663-fac559d40986
IXGX120N120A3
Виробник: IXYS
Description: IGBT PT 1200V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
товару немає в наявності
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DPG30I300HA media?resourcetype=datasheets&itemid=63779446-FB19-46A8-98FA-0405CBC10C47&filename=Littelfuse-Power-Semiconductors-DPG30I300HA-Datasheet
DPG30I300HA
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товару немає в наявності
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IXTK140N30P a
IXTK140N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
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CS19-08ho1S-TUBE CS19-08ho1.pdf
CS19-08ho1S-TUBE
Виробник: IXYS
Description: THYRISTOR PHASE 19A 800V TO-263
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CS19-12ho1S-TUBE CS19-08ho1.pdf
CS19-12ho1S-TUBE
Виробник: IXYS
Description: THYRISTOR PHASE 19A 1200V TO-263
товару немає в наявності
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CS20-25mo1F Littelfuse-Power-Semiconductors-CS20-25mo1F-Datasheet?assetguid=56e0d098-377c-453d-a3a9-172adaef3ec0
CS20-25mo1F
Виробник: IXYS
Description: SCR 2.5KV ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Off State: 2.5 kV
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2976.46 грн
25+1982.34 грн
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DFE10I600PM DFE10I600PM.pdf
DFE10I600PM
Виробник: IXYS
Description: DIODE GP 600V 10A TO220ACFP
на замовлення 3820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.59 грн
10+138.16 грн
100+111.05 грн
500+85.62 грн
1000+71.25 грн
Мінімальне замовлення: 2
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DGS10-018AS-TUBE DGS10-018A,AS,%20DGSK20-018A.pdf
DGS10-018AS-TUBE
Виробник: IXYS
Description: DIODE SCHOTTKY 180V 15A TO263AB
товару немає в наявності
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DGS20-018AS-TUBE DGS,DGSK%2020,40-018A,%20AS.pdf
DGS20-018AS-TUBE
Виробник: IXYS
Description: DIODE SCHOTTKY 180V 23A TO263AB
товару немає в наявності
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DGSK20-025AS-TUBE DGS,DGSK%209,%2010,%2020-025A,AS.pdf
DGSK20-025AS-TUBE
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 250V TO263
товару немає в наявності
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DHF30IM600PN DHF30IM600PN.pdf
Виробник: IXYS
Description: DIODE GP 600V 15A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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DHF30IM600QB DHF30IM600QB.pdf
DHF30IM600QB
Виробник: IXYS
Description: DIODE GEN PURP 600V 30A TO3P
товару немає в наявності
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DHG100X1200NA DHG100X1200NA.pdf
DHG100X1200NA
Виробник: IXYS
Description: DIODE MODULE 1.2KV 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.16 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
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DHG100X600NA media?resourcetype=datasheets&itemid=0b01c02e-98f7-4b7a-816c-32a0b6b478f6&filename=littelfuse%2520power%2520semiconductors%2520dhg100x600na%2520datasheet.pdf
DHG100X600NA
Виробник: IXYS
Description: DIODE MOD GP 600V 100A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
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DHG50X1200NA DHG50X1200NA.pdf
DHG50X1200NA
Виробник: IXYS
Description: DIODE MODULE 1.2KV 25A SOT227B
товару немає в наявності
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DHG50X600NA
DHG50X600NA
Виробник: IXYS
Description: DIODE MODULE GP 600V 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 600 V
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DHG60I1200HA DHG60I1200HA.pdf
DHG60I1200HA
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247AD
на замовлення 2280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+619.80 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DHG60I600HA media?resourcetype=datasheets&itemid=92842a9a-89dc-40c1-bf19-39534a9da6a1&filename=littelfuse%2520power%2520semiconductors%2520dhg60i600ha%2520datasheet.pdf
DHG60I600HA
Виробник: IXYS
Description: DIODE STANDARD 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
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DLA20IM800PC-TRL DLA20IM800PC.pdf
DLA20IM800PC-TRL
Виробник: IXYS
Description: DIODE GEN PURP 800V 20A TO263
товару немає в наявності
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DPF120X400NA
Виробник: IXYS
Description: DIODE MODULE 400V 120A SOT227B
товару немає в наявності
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DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Виробник: IXYS
Description: DIODE ARRAY 200V 120A SOT227B
товару немає в наявності
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DPF400C400NB
Виробник: IXYS
Description: DIODE MODULE 400V 400A SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
DPF60C200HB
DPF60C200HB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 60A TO247AD
на замовлення 4350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+500.79 грн
10+432.96 грн
100+354.74 грн
500+283.40 грн
1000+239.33 грн
В кошику  од. на суму  грн.
DPF60I200HA
DPF60I200HA
Виробник: IXYS
Description: DIODE ARRAY GP 200V 60A TO247AD
товару немає в наявності
В кошику  од. на суму  грн.
DPF60XA400NA
Виробник: IXYS
Description: DIODE MODULE 400V 60A SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
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