| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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MCC26-12io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 27A Case: TO240AA Max. forward voltage: 1.64V Max. forward impulse current: 560A Gate current: 100/200mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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DSEP29-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: TO220AC Kind of package: tube Max. forward voltage: 2.52V Heatsink thickness: 1.14...1.39mm Power dissipation: 165W Reverse recovery time: 25ns Technology: HiPerFRED™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSEP29-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: TO220AC Kind of package: tube Max. forward voltage: 1.26V Heatsink thickness: 1.14...1.39mm Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSEP29-06AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: D2PAK Kind of package: tube Max. forward voltage: 1.26V Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSEP29-06AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Case: D2PAK; TO263AB Kind of package: reel; tape Max. forward voltage: 1.61V Reverse recovery time: 35ns Technology: FRED |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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DSEP29-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 200A Case: TO220AC Kind of package: tube Max. forward voltage: 1.81V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DSEP29-12B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 200A Case: TO220-2 Kind of package: tube Max. forward voltage: 3.76V Reverse recovery time: 140ns Technology: FRED |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||
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IXDI609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXDI609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 805 шт: термін постачання 14-30 дні (днів) |
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IXDI609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
| IXDI609SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
| VUO82-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 0.78V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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IXDN630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 114 шт: термін постачання 14-30 дні (днів) |
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LOC110P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LOC110PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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LOC110STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Insulation voltage: 3.75kV Trigger current: 1A Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
| IXFH80N65X2W | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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PM1205S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PM1205STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PM1206S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA Type of relay: solid state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PM1206STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA Type of relay: solid state |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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IXGH10N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Type of transistor: IGBT Technology: NPT Power dissipation: 140W Case: TO247-3 Mounting: THT Gate charge: 29nC Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Pulsed collector current: 20A Turn-on time: 107ns Turn-off time: 240ns Gate-emitter voltage: ±20V Collector current: 5A |
на замовлення 274 шт: термін постачання 14-30 дні (днів) |
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IXGH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Collector-emitter voltage: 1.7kV Power dissipation: 110W Gate charge: 32nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 0.3µs Kind of package: tube Case: TO247-3 Turn-off time: 630ns Gate-emitter voltage: ±20V Collector current: 10A Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFR20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Power dissipation: 290W Case: ISOPLUS247™ Mounting: THT Gate charge: 193nC Kind of package: tube On-state resistance: 0.63Ω Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 1.2kV |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXFX20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Power dissipation: 780W Case: PLUS247™ Mounting: THT Gate charge: 193nC Kind of package: tube Gate-source voltage: ±30V On-state resistance: 570mΩ Reverse recovery time: 300ns Polarisation: unipolar Drain current: 20A Kind of channel: enhancement Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFK20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264 Type of transistor: N-MOSFET Power dissipation: 780W Case: TO264 Mounting: THT Gate charge: 193nC Kind of package: tube On-state resistance: 570mΩ Polarisation: unipolar Drain current: 20A Kind of channel: enhancement Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXSA20N120L2-7TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Power dissipation: 136W Case: D2PAK-7 Mounting: SMD Gate charge: 29nC Gate-source voltage: -5...20V On-state resistance: 160Ω Polarisation: N Drain current: 20A Kind of channel: enhancement Drain-source voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| IXSH20N120L2KHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns Type of transistor: N-MOSFET Technology: SiC Power dissipation: 136W Case: TO247-4 Mounting: THT Gate charge: 29nC Gate-source voltage: -5...20V On-state resistance: 160Ω Reverse recovery time: 30ns Polarisation: N Drain current: 20A Kind of channel: enhancement Drain-source voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||
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IXFA26N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Power dissipation: 170W Gate charge: 22nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 26A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 66mΩ Reverse recovery time: 105ns Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA20C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V Mounting: THT Case: TO220AB Max. off-state voltage: 0.1kV Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 0.24kA Max. forward voltage: 0.71V Power dissipation: 65W |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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IXFH90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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IXFA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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IXFP90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 293 шт: термін постачання 14-30 дні (днів) |
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IXFQ90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO3P Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
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IXTA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 124ns Pulsed drain current: 220A Polarisation: unipolar Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXFA90N20X3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 95ns |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IXFP90N20X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXTA90N20X3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns Type of transistor: N-MOSFET Technology: X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: D2PAK-3 Gate-source voltage: 20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 124ns |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| MDD175-28N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.8kV Load current: 240A Case: Y1-CU Max. forward voltage: 1.01V Max. forward impulse current: 7.23kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||
| IXTT40N50L2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: D3PAK; TO268 Gate-source voltage: 20V On-state resistance: 0.17Ω Mounting: SMD Kind of channel: enhancement Reverse recovery time: 0.5µs |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||||
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XCA170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 239 шт: термін постачання 14-30 дні (днів) |
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XCA170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 248 шт: термін постачання 14-30 дні (днів) |
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| XCA170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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IXDI630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 193 шт: термін постачання 14-30 дні (днів) |
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IXDI630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 190 шт: термін постачання 14-30 дні (днів) |
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IXDI630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 110 шт: термін постачання 14-30 дні (днів) |
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IXDI630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DPG30P300PJ | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward impulse current: 0.45kA Case: ISOPLUS220™ Kind of package: tube Max. forward voltage: 1.27V Reverse recovery time: 35ns Power dissipation: 145W Technology: HiPerFRED™ 2nd Gen |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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DPG80C300HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 40A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 0.45kA Case: TO247-3 Kind of package: tube Max. forward voltage: 1.36V Power dissipation: 215W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
на замовлення 182 шт: термін постачання 14-30 дні (днів) |
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DPG60IM400QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 0.45kA Case: TO3P Kind of package: tube Max. forward voltage: 1.47V Reverse recovery time: 45ns Power dissipation: 275W Technology: HiPerFRED™ 2nd Gen |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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| MCC95-18io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXTR20P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Technology: PolarP™ Drain current: -13A Kind of channel: enhancement Drain-source voltage: -500V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.49Ω Reverse recovery time: 406ns Power dissipation: 190W Gate charge: 103nC Polarisation: unipolar |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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IXDN75N120 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B Technology: NPT Collector current: 150A Power dissipation: 660W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 190A Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Semiconductor structure: single transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXYH75N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 1.15kW Case: TO247; TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 157nC Kind of package: tube Turn-on time: 24ns Turn-off time: 235ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IXFP22N65X2MW | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| MDMA60B1200MB | IXYS |
Category: Diode modules Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: THT Load current: 60A Kind of package: bulk Case: ECO-PAC 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXFA5N100P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK; TO263 On-state resistance: 2.8Ω Reverse recovery time: 200ns Power dissipation: 250W Gate charge: 33.4nC Technology: HiPerFET™ Drain current: 5A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IXFP5N100PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns Mounting: THT Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: TO220-3 On-state resistance: 2.8Ω Reverse recovery time: 200ns Power dissipation: 42W Gate charge: 33.4nC Drain current: 2.3A |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
| IXFT15N100Q3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D3PAK; TO268 On-state resistance: 1.1Ω Reverse recovery time: 250ns Power dissipation: 690W Gate charge: 64nC Technology: HiPerFET™ Drain current: 15A |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||||
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IXTA05N100-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK; TO263 On-state resistance: 17Ω Reverse recovery time: 710ns Power dissipation: 40W Gate charge: 7.8nC Drain current: 0.75A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| MCC26-12io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2033.84 грн |
| 5+ | 1755.67 грн |
| DSEP29-06B |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
товару немає в наявності
В кошику
од. на суму грн.
| DSEP29-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
товару немає в наявності
В кошику
од. на суму грн.
| DSEP29-06AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
товару немає в наявності
В кошику
од. на суму грн.
| DSEP29-06AS-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| DSEP29-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
товару немає в наявності
В кошику
од. на суму грн.
| DSEP29-12B |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXDI609SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
В кошику
од. на суму грн.
| IXDI609SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 805 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.63 грн |
| 10+ | 88.88 грн |
| 25+ | 85.50 грн |
| 50+ | 82.11 грн |
| 100+ | 79.57 грн |
| 300+ | 77.88 грн |
| IXDI609SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXDI609SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| VUO82-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2909.00 грн |
| 3+ | 2532.76 грн |
| 5+ | 2531.07 грн |
| IXDN630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 114 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 676.43 грн |
| 10+ | 503.67 грн |
| 25+ | 482.51 грн |
| 50+ | 465.58 грн |
| 100+ | 463.04 грн |
| LOC110P |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
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| LOC110PTR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LOC110STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 1A
Number of channels: 1
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 1A
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IXFH80N65X2W |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| PM1205S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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В кошику
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| PM1205STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
товару немає в наявності
В кошику
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| PM1206S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
товару немає в наявності
В кошику
од. на суму грн.
| PM1206STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IXGH10N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 140W
Case: TO247-3
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 140W
Case: TO247-3
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
на замовлення 274 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 646.34 грн |
| 10+ | 486.74 грн |
| IXGH10N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| IXFR20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 0.63Ω
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 0.63Ω
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2326.47 грн |
| 3+ | 1936.82 грн |
| 10+ | 1713.34 грн |
| 30+ | 1544.04 грн |
| IXFX20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Power dissipation: 780W
Case: PLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Power dissipation: 780W
Case: PLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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В кошику
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| IXFK20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Power dissipation: 780W
Case: TO264
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 570mΩ
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Power dissipation: 780W
Case: TO264
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 570mΩ
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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| IXSA20N120L2-7TR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: D2PAK-7
Mounting: SMD
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: D2PAK-7
Mounting: SMD
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXSH20N120L2KHV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: TO247-4
Mounting: THT
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Reverse recovery time: 30ns
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: TO247-4
Mounting: THT
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Reverse recovery time: 30ns
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| IXFA26N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
товару немає в наявності
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| DSA20C100PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| IXFH90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 788.56 грн |
| 4+ | 656.89 грн |
| 10+ | 584.94 грн |
| 20+ | 531.61 грн |
| 30+ | 499.44 грн |
| 60+ | 466.43 грн |
| IXFA90N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.34 грн |
| 3+ | 401.25 грн |
| IXFP90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 631.76 грн |
| 10+ | 400.40 грн |
| 25+ | 366.54 грн |
| 50+ | 358.07 грн |
| IXFQ90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 716.54 грн |
| 3+ | 598.48 грн |
| 10+ | 529.07 грн |
| IXTA90N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
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| IXFA90N20X3-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXFP90N20X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
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В кошику
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| IXTA90N20X3-TRL |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MDD175-28N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| IXTT40N50L2-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| XCA170 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 239 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.48 грн |
| 50+ | 214.17 грн |
| XCA170S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 425.73 грн |
| 50+ | 259.03 грн |
| XCA170STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| IXDI630MCI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 700.13 грн |
| 10+ | 443.57 грн |
| 50+ | 415.64 грн |
| IXDI630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 621.73 грн |
| 50+ | 463.04 грн |
| IXDI630MYI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 790.38 грн |
| 10+ | 500.29 грн |
| 50+ | 431.72 грн |
| IXDI630CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
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| DPG30P300PJ |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 145W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 145W
Technology: HiPerFRED™ 2nd Gen
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 710.16 грн |
| 3+ | 523.14 грн |
| 10+ | 473.20 грн |
| DPG80C300HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.36V
Power dissipation: 215W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.36V
Power dissipation: 215W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 182 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 477.69 грн |
| 3+ | 386.01 грн |
| 10+ | 353.00 грн |
| DPG60IM400QB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO3P
Kind of package: tube
Max. forward voltage: 1.47V
Reverse recovery time: 45ns
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO3P
Kind of package: tube
Max. forward voltage: 1.47V
Reverse recovery time: 45ns
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 379.24 грн |
| 3+ | 316.60 грн |
| 10+ | 280.20 грн |
| 30+ | 256.49 грн |
| MCC95-18io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| IXTR20P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: PolarP™
Drain current: -13A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.49Ω
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: PolarP™
Drain current: -13A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.49Ω
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 645.43 грн |
| 3+ | 533.30 грн |
| 10+ | 479.97 грн |
| IXDN75N120 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
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| IXYH75N120B4 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
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| IXFP22N65X2MW |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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Мінімальне замовлення: 300 шт
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| MDMA60B1200MB |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
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| IXFA5N100P-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
товару немає в наявності
Мінімальне замовлення: 800 шт
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| IXFP5N100PM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXFT15N100Q3-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 1.1Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Technology: HiPerFET™
Drain current: 15A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 1.1Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Technology: HiPerFET™
Drain current: 15A
товару немає в наявності
Мінімальне замовлення: 400 шт
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| IXTA05N100-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.