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PLA171P PLA171P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6E40C7&compId=PLA171.pdf?ci_sign=138dba0ad6265865f9462ed6c575f68af5377000 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Max. operating current: 0.1A
Control current max.: 50mA
On-state resistance: 50Ω
Switched voltage: max. 800V AC; max. 800V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
2+282.60 грн
10+252.58 грн
50+209.93 грн
100+194.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA134 PLA134 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98B60C7&compId=PLA134.pdf?ci_sign=7731cdb8abeac785cdd7ba775e2f0d505010a3bd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+1362.68 грн
В кошику  од. на суму  грн.
CPC1511Y CPC1511Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320048E0C7&compId=CPC1511.pdf?ci_sign=58b19b931ace12b777f563204bcc6482003a5ac9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
2+357.67 грн
10+294.40 грн
125+267.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK32N80Q3 IXFK32N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC102BD600B820&compId=IXFK(X)32N80Q3.pdf?ci_sign=c47e75c209491b589467e1adbfe959bafdbee39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Case: TO264
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1383.00 грн
3+1136.60 грн
10+1018.51 грн
В кошику  од. на суму  грн.
IXTP80N10T IXTP80N10T IXYS IXTA(P)80N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
2+223.43 грн
10+171.39 грн
50+151.71 грн
100+142.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP80N12T2 IXTP80N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D401DBA5BEB820&compId=IXTA(P)80N12T2.pdf?ci_sign=7682108f228cee2f7d0194b2935bc173520213f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
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IXTQ120N15P IXTQ120N15P IXYS IXTQ120N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXFH160N15T2 IXFH160N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0E5820&compId=IXFH160N15T2.pdf?ci_sign=467d005fecee5b2cd75a7e20897d1283fa7c3985 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
1+569.62 грн
30+429.71 грн
В кошику  од. на суму  грн.
IXFK360N15T2 IXFK360N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681 Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFN360N15T2 IXFN360N15T2 IXYS IXFN360N15T2.pdf Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 150V; 310A; SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 310A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXFX360N15T2 IXFX360N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681 Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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MMIX1H60N150V1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF049A4BE1158BF&compId=MMIX1H60N150V1.pdf?ci_sign=2ae92bab7b597b60581a48f40ba8030aeacc3a55 Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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MMIX1F360N15T2 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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CPC1025N CPC1025N IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+441.57 грн
В кошику  од. на суму  грн.
CLA16E1200PN CLA16E1200PN IXYS CLA16E1200PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 1.2kV
Case: TO220FP
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
2+249.05 грн
10+127.11 грн
50+116.45 грн
100+112.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP110N055T2 IXTP110N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
3+176.31 грн
10+138.59 грн
50+118.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTA80N10T IXTA80N10T IXYS IXTA(P)80N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTP180N10T IXYS IXTA(P)180N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
1+529.00 грн
10+404.29 грн
25+323.10 грн
В кошику  од. на суму  грн.
IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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IXYP30N65C3 IXYP30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXYH30N65C3 IXYH30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS IXY_30N65C3H1_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXTP36P15P IXTP36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Gate charge: 55nC
Reverse recovery time: 228ns
On-state resistance: 0.11Ω
Power dissipation: 300W
Gate-source voltage: ±20V
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
1+501.62 грн
10+282.10 грн
50+277.18 грн
В кошику  од. на суму  грн.
IXTR36P15P IXTR36P15P IXYS IXTR36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Case: ISOPLUS247™
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Gate charge: 55nC
Reverse recovery time: 150ns
On-state resistance: 0.12Ω
Power dissipation: 150W
Gate-source voltage: ±20V
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
2+440.69 грн
3+361.65 грн
10+324.74 грн
30+303.42 грн
Мінімальне замовлення: 2
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IXTA36P15P IXTA36P15P IXYS IXT_36P15P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTH36P15P IXTH36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTQ36P15P IXTQ36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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В кошику  од. на суму  грн.
IXFH26N50P3 IXFH26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 406 шт:
термін постачання 21-30 дні (днів)
1+513.10 грн
5+401.01 грн
10+361.65 грн
В кошику  од. на суму  грн.
IXFH26N50P IXFH26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+471.60 грн
10+361.65 грн
В кошику  од. на суму  грн.
IXTQ26N50P IXTQ26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
1+450.40 грн
3+384.61 грн
10+333.76 грн
30+329.66 грн
В кошику  од. на суму  грн.
IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
4+139.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFQ26N50P3 IXFQ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFJ26N50P3 IXFJ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
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IXTT26N50P IXTT26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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В кошику  од. на суму  грн.
IXFQ28N60P3 IXFQ28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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LAA100 LAA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+378.87 грн
10+307.52 грн
250+248.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100L LAA100L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+309.10 грн
50+246.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100S LAA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
1+507.81 грн
50+309.16 грн
В кошику  од. на суму  грн.
DSEI60-02A DSEI60-02A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD571E80678D8BF&compId=DSEI60-02A.pdf?ci_sign=a0fb9e8e737a89169c2b9a3753e0abe4ec11b12a description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
1+459.23 грн
3+405.11 грн
10+351.80 грн
30+323.92 грн
В кошику  од. на суму  грн.
MCMA140PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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IXFK420N10T IXFK420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1245.23 грн
5+984.89 грн
В кошику  од. на суму  грн.
CPC1014NTR CPC1014NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1025NTR CPC1025NTR IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+471.60 грн
В кошику  од. на суму  грн.
IXFB300N10P IXFB300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2274.97 грн
В кошику  од. на суму  грн.
IXGN200N60B3 IXGN200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
1+3815.16 грн
3+3242.51 грн
В кошику  од. на суму  грн.
DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
1+3139.56 грн
3+2597.94 грн
9+2561.04 грн
В кошику  од. на суму  грн.
CS45-12IO1 CS45-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
1+460.12 грн
5+335.40 грн
10+296.04 грн
30+272.26 грн
В кошику  од. на суму  грн.
LAA110 LAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
2+314.40 грн
5+264.06 грн
10+244.38 грн
30+232.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110PL LAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+312.63 грн
10+255.86 грн
100+235.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110S LAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
2+390.35 грн
50+305.88 грн
100+290.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110L LAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LS LAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
LAA110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PLA171P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6E40C7&compId=PLA171.pdf?ci_sign=138dba0ad6265865f9462ed6c575f68af5377000
PLA171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Max. operating current: 0.1A
Control current max.: 50mA
On-state resistance: 50Ω
Switched voltage: max. 800V AC; max. 800V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+282.60 грн
10+252.58 грн
50+209.93 грн
100+194.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA134 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98B60C7&compId=PLA134.pdf?ci_sign=7731cdb8abeac785cdd7ba775e2f0d505010a3bd
PLA134
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1362.68 грн
В кошику  од. на суму  грн.
CPC1511Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320048E0C7&compId=CPC1511.pdf?ci_sign=58b19b931ace12b777f563204bcc6482003a5ac9
CPC1511Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+357.67 грн
10+294.40 грн
125+267.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK32N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC102BD600B820&compId=IXFK(X)32N80Q3.pdf?ci_sign=c47e75c209491b589467e1adbfe959bafdbee39b
IXFK32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Case: TO264
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1383.00 грн
3+1136.60 грн
10+1018.51 грн
В кошику  од. на суму  грн.
IXTP80N10T IXTA(P)80N10T.pdf
IXTP80N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+223.43 грн
10+171.39 грн
50+151.71 грн
100+142.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP80N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D401DBA5BEB820&compId=IXTA(P)80N12T2.pdf?ci_sign=7682108f228cee2f7d0194b2935bc173520213f0
IXTP80N12T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ120N15P IXTQ120N15P-DTE.pdf
IXTQ120N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXFH160N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0E5820&compId=IXFH160N15T2.pdf?ci_sign=467d005fecee5b2cd75a7e20897d1283fa7c3985
IXFH160N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+569.62 грн
30+429.71 грн
В кошику  од. на суму  грн.
IXFK360N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681
IXFK360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFN360N15T2 IXFN360N15T2.pdf
IXFN360N15T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 150V; 310A; SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 310A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXFX360N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681
IXFX360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
товару немає в наявності
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MMIX1H60N150V1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF049A4BE1158BF&compId=MMIX1H60N150V1.pdf?ci_sign=2ae92bab7b597b60581a48f40ba8030aeacc3a55
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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MMIX1F360N15T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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CPC1025N CPC1025N.pdf
CPC1025N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+441.57 грн
В кошику  од. на суму  грн.
CLA16E1200PN CLA16E1200PN.pdf
CLA16E1200PN
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 1.2kV
Case: TO220FP
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+249.05 грн
10+127.11 грн
50+116.45 грн
100+112.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP110N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588
IXTP110N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.31 грн
10+138.59 грн
50+118.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTA80N10T IXTA(P)80N10T.pdf
IXTA80N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTA(P)180N10T.pdf
IXTP180N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+529.00 грн
10+404.29 грн
25+323.10 грн
В кошику  од. на суму  грн.
IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
товару немає в наявності
В кошику  од. на суму  грн.
IXYP30N65C3 IXYH(P)30N65C3.pdf
IXYP30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXYH30N65C3 IXYH(P)30N65C3.pdf
IXYH30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYH30N65C3H1 IXY_30N65C3H1_HV.pdf
IXYH30N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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В кошику  од. на суму  грн.
IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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В кошику  од. на суму  грн.
IXTP36P15P IXT_36P15P.pdf
IXTP36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Gate charge: 55nC
Reverse recovery time: 228ns
On-state resistance: 0.11Ω
Power dissipation: 300W
Gate-source voltage: ±20V
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+501.62 грн
10+282.10 грн
50+277.18 грн
В кошику  од. на суму  грн.
IXTR36P15P IXTR36P15P.pdf
IXTR36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Case: ISOPLUS247™
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Gate charge: 55nC
Reverse recovery time: 150ns
On-state resistance: 0.12Ω
Power dissipation: 150W
Gate-source voltage: ±20V
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+440.69 грн
3+361.65 грн
10+324.74 грн
30+303.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA36P15P IXT_36P15P.pdf
IXTA36P15P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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В кошику  од. на суму  грн.
IXTH36P15P IXT_36P15P.pdf
IXTH36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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В кошику  од. на суму  грн.
IXTQ36P15P IXT_36P15P.pdf
IXTQ36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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В кошику  од. на суму  грн.
IXFH26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFH26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 406 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+513.10 грн
5+401.01 грн
10+361.65 грн
В кошику  од. на суму  грн.
IXFH26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+471.60 грн
10+361.65 грн
В кошику  од. на суму  грн.
IXTQ26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTQ26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+450.40 грн
3+384.61 грн
10+333.76 грн
30+329.66 грн
В кошику  од. на суму  грн.
IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+139.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFQ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFQ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFJ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb
IXFJ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
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IXTT26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTT26N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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IXFQ28N60P3 IXFH(Q)28N60P3.pdf
IXFQ28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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LAA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+378.87 грн
10+307.52 грн
250+248.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824
LAA100L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+309.10 грн
50+246.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+507.81 грн
50+309.16 грн
В кошику  од. на суму  грн.
DSEI60-02A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD571E80678D8BF&compId=DSEI60-02A.pdf?ci_sign=a0fb9e8e737a89169c2b9a3753e0abe4ec11b12a
DSEI60-02A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+459.23 грн
3+405.11 грн
10+351.80 грн
30+323.92 грн
В кошику  од. на суму  грн.
MCMA140PD1200TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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IXFK420N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c
IXFK420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1245.23 грн
5+984.89 грн
В кошику  од. на суму  грн.
CPC1014NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f
CPC1014NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1025NTR CPC1025N.pdf
CPC1025NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXA30RG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA30RG1200DHGLB
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+471.60 грн
В кошику  од. на суму  грн.
IXFB300N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99
IXFB300N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2274.97 грн
В кошику  од. на суму  грн.
IXGN200N60B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241
IXGN200N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3815.16 грн
3+3242.51 грн
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DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3139.56 грн
3+2597.94 грн
9+2561.04 грн
В кошику  од. на суму  грн.
CS45-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0
CS45-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+460.12 грн
5+335.40 грн
10+296.04 грн
30+272.26 грн
В кошику  од. на суму  грн.
LAA110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+314.40 грн
5+264.06 грн
10+244.38 грн
30+232.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+312.63 грн
10+255.86 грн
100+235.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+390.35 грн
50+305.88 грн
100+290.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
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