| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DSEP29-06AS-TUB | IXYS |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Case: D2PAK Kind of package: tube Max. forward voltage: 1.26V Reverse recovery time: 35ns Technology: HiPerFRED™ Power dissipation: 165W Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSEP29-06AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Case: D2PAK; TO263AB Kind of package: reel; tape Max. forward voltage: 1.61V Reverse recovery time: 35ns Technology: FRED |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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DSEP29-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 200A Case: TO220AC Kind of package: tube Max. forward voltage: 1.81V Reverse recovery time: 40ns Technology: HiPerFRED™ Power dissipation: 165W Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DSEP29-12B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 200A Case: TO220-2 Kind of package: tube Max. forward voltage: 3.76V Reverse recovery time: 140ns Technology: FRED |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||
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IXDI609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXDI609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 820 шт: термін постачання 14-30 дні (днів) |
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IXDI609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
| IXDI609SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
| VUO82-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 0.78V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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IXDN630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 114 шт: термін постачання 14-30 дні (днів) |
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LOC110P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A Kind of output: transistor Case: Flatpack 8pin |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LOC110PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A Kind of output: transistor Case: Flatpack 8pin |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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LOC110STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
| IXFH80N65X2W | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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PM1205S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PM1205STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PM1206S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Max. operating current: 0.5A Control current max.: 100mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PM1206STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Max. operating current: 0.5A Control current max.: 100mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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IXGH10N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Collector-emitter voltage: 1.7kV Power dissipation: 140W Gate charge: 29nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 20A Type of transistor: IGBT Turn-on time: 107ns Kind of package: tube Case: TO247-3 Turn-off time: 240ns Gate-emitter voltage: ±20V Collector current: 5A Mounting: THT |
на замовлення 278 шт: термін постачання 14-30 дні (днів) |
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IXGH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Collector-emitter voltage: 1.7kV Power dissipation: 110W Gate charge: 32nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 0.3µs Kind of package: tube Case: TO247-3 Turn-off time: 630ns Gate-emitter voltage: ±20V Collector current: 10A Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFR20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 13A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.63Ω Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXFX20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFK20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: TO264 On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXSA20N120L2-7TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 136W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 160Ω Mounting: SMD Gate charge: 29nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| IXSH20N120L2KHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 136W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 160Ω Mounting: THT Gate charge: 29nC Kind of channel: enhancement Reverse recovery time: 30ns |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||
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IXFA26N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Power dissipation: 170W Gate charge: 22nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 26A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 66mΩ Reverse recovery time: 105ns Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA20C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V Mounting: THT Case: TO220AB Max. off-state voltage: 0.1kV Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 0.24kA Max. forward voltage: 0.71V Power dissipation: 65W |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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IXFH90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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IXFA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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IXFP90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 293 шт: термін постачання 14-30 дні (днів) |
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IXFQ90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO3P Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
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IXTA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 124ns Pulsed drain current: 220A Polarisation: unipolar Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXFA90N20X3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 95ns |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IXFP90N20X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXTA90N20X3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns Type of transistor: N-MOSFET Technology: X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: D2PAK-3 Gate-source voltage: 20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 124ns |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| MDD175-28N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.8kV Load current: 240A Case: Y1-CU Max. forward voltage: 1.01V Max. forward impulse current: 7.23kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| DSEP29-06AS-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику
од. на суму грн.
| DSEP29-06AS-TRL |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| DSEP29-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику
од. на суму грн.
| DSEP29-12B |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
товару немає в наявності
Мінімальне замовлення: 50 шт
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| IXDI609SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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| IXDI609SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.44 грн |
| 10+ | 88.06 грн |
| 25+ | 84.70 грн |
| 50+ | 81.35 грн |
| 100+ | 78.83 грн |
| 300+ | 77.16 грн |
| IXDI609SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| IXDI609SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| VUO82-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2881.99 грн |
| 3+ | 2509.24 грн |
| 5+ | 2507.56 грн |
| IXDN630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 114 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 670.15 грн |
| 10+ | 499.00 грн |
| 25+ | 478.03 грн |
| 50+ | 461.26 грн |
| 100+ | 458.74 грн |
| LOC110P |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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| LOC110PTR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| LOC110STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IXFH80N65X2W |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 300 шт
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| PM1205S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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| PM1205STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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| PM1206S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
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| PM1206STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IXGH10N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 640.34 грн |
| 10+ | 482.22 грн |
| IXGH10N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
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| IXFR20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2304.87 грн |
| 3+ | 1918.83 грн |
| 10+ | 1697.43 грн |
| 30+ | 1529.70 грн |
| IXFX20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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| IXFK20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
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| IXSA20N120L2-7TR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| IXSH20N120L2KHV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
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Мінімальне замовлення: 450 шт
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| IXFA26N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
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| DSA20C100PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| IXFH90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 781.23 грн |
| 4+ | 650.79 грн |
| 10+ | 579.51 грн |
| 20+ | 526.67 грн |
| 30+ | 494.80 грн |
| 60+ | 462.10 грн |
| IXFA90N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 476.87 грн |
| 3+ | 397.52 грн |
| IXFP90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 625.89 грн |
| 10+ | 396.68 грн |
| 25+ | 363.14 грн |
| 50+ | 354.75 грн |
| IXFQ90N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 709.88 грн |
| 3+ | 592.93 грн |
| 10+ | 524.16 грн |
| IXTA90N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFA90N20X3-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXFP90N20X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTA90N20X3-TRL |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MDD175-28N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.