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IXFH50N30Q3 IXFH50N30Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+792.60 грн
10+695.32 грн
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
1+2040.32 грн
5+1622.68 грн
10+1607.53 грн
В кошику  од. на суму  грн.
IXFT120N15P IXFT120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 200ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+753.10 грн
10+576.51 грн
30+452.91 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV IXFT120N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO268HV
Polarisation: unipolar
Gate charge: 122nC
Reverse recovery time: 140ns
On-state resistance: 12mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 480W
Kind of package: tube
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+889.63 грн
В кошику  од. на суму  грн.
IXXN200N60C3H1 IXXN200N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F323B2A9A45820&compId=IXXN200N60C3H1.pdf?ci_sign=c226e5dec3e51a0405118c87d36ddf9c69c0fdda Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
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IXGX55N120A3H1 IXGX55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
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MMIX1F210N30P3
+1
 		MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+3469.23 грн
3+2845.07 грн
10+2558.01 грн
20+2554.82 грн
В кошику  од. на суму  грн.
IX4427NTR IX4427NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
5+100.47 грн
10+58.61 грн
25+51.51 грн
50+46.97 грн
100+43.06 грн
250+38.67 грн
500+37.88 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 IXFN170N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
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IXTT1N250HV IXTT1N250HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14B3820&compId=IXTT1N250HV.pdf?ci_sign=35d38b5601b2a04ee4448180fd9ae245a739e2e3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 250W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.5µs
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IXTH24N50L IXTH24N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXGH32N170 IXGH32N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 155nC
Turn-on time: 90ns
Turn-off time: 920ns
Power dissipation: 350W
Collector current: 32A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXGH6N170 IXGH6N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A99DD112ACB8BF&compId=IXG_6N170.pdf?ci_sign=da939209e45ad284a3aacd5ea8533deede4f01af Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 20nC
Turn-on time: 85ns
Turn-off time: 0.6µs
Power dissipation: 75W
Collector current: 6A
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXGH16N170 IXGH16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
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IXGH16N170A IXGH16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGH6N170A IXGH6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXGH10N170 IXGH10N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAED5175596B820&compId=IXGH(t)10N170.pdf?ci_sign=3b7d3b6c182f8b0f27b026b278621c2bcff2c55b Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXTP130N10T IXTP130N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F130D820&compId=IXTA(P)130N10T.pdf?ci_sign=2932da386061339a6cff57dbeaf4458030129d04 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP10P15T IXTP10P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
3+176.90 грн
10+132.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LDA203S LDA203S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Collector-emitter voltage: 500mV
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
5+102.19 грн
6+76.55 грн
25+59.80 грн
100+48.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
2+246.45 грн
100+212.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+320.30 грн
10+238.42 грн
50+217.69 грн
Мінімальне замовлення: 2
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IXBH42N170 IXBH42N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
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IXFA3N120 IXFA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
на замовлення 321 шт:
термін постачання 21-30 дні (днів)
1+670.66 грн
3+570.13 грн
5+531.85 грн
10+470.46 грн
50+436.17 грн
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IXFK120N30T IXFK120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+429.36 грн
В кошику  од. на суму  грн.
IXFP270N06T3 IXFP270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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IXFA270N06T3 IXFA270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
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LCC110 LCC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 80 шт:
термін постачання 21-30 дні (днів)
2+309.14 грн
4+241.61 грн
11+228.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCC110S LCC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
1+474.01 грн
4+242.40 грн
11+229.65 грн
В кошику  од. на суму  грн.
CPC1977J CPC1977J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+401.02 грн
3+335.70 грн
10+296.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXBT16N170A IXBT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1071.68 грн
3+873.93 грн
В кошику  од. на суму  грн.
IXBT16N170AHV IXBT16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1057.94 грн
3+873.93 грн
10+784.63 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGP30N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+772.85 грн
В кошику  од. на суму  грн.
LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
3+182.91 грн
50+154.69 грн
250+138.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCB716S LCB716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
1+523.82 грн
50+445.74 грн
100+381.15 грн
В кошику  од. на суму  грн.
LCB717 LCB717 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86CE0C7&compId=LCB717.pdf?ci_sign=87a05df09da7b5fc5d647e258aa9681fbe313cf2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Case: DIP6
On-state resistance: 0.3Ω
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
2+420.77 грн
3+339.69 грн
8+321.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LOC110P LOC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
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LOC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
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LOC110STR LOC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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DSEI120-06A DSEI120-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+665.51 грн
В кошику  од. на суму  грн.
IXFT50N85XHV IXFT50N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.105Ω
Drain current: 50A
Power dissipation: 890W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 218ns
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DSEP29-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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VBO22-08NO8 VBO22-08NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B12C9F6B6540C7&compId=VBO22-08NO8.pdf?ci_sign=1fbe7e5633960b7d58e4762058e773b0db93c70e Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
1+714.46 грн
2+578.90 грн
5+547.01 грн
10+526.27 грн
В кошику  од. на суму  грн.
VBO22-16NO8 VBO22-16NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+917.11 грн
2+806.95 грн
3+770.27 грн
5+712.86 грн
10+663.42 грн
В кошику  од. на суму  грн.
IX2120B IX2120B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
4+113.23 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH140N20X3 IXFH140N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
1+858.72 грн
10+743.16 грн
30+682.56 грн
В кошику  од. на суму  грн.
IXFN140N20P IXFN140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXFK140N20P IXFK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 18mΩ
Drain-source voltage: 200V
Power dissipation: 830W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR140N20P IXFR140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTK140N20P IXTK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Technology: PolarHT™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 180ns
Gate charge: 240nC
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Power dissipation: 800W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTP26P10T IXTP26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
3+133.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY26P10T IXTY26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA26P10T IXTA26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IXDD614YI IXDD614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
1+429.36 грн
10+265.53 грн
50+226.46 грн
В кошику  од. на суму  грн.
IXDI630MYI IXDI630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
1+744.51 грн
10+471.25 грн
50+406.67 грн
В кошику  од. на суму  грн.
IXFH50N30Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158
IXFH50N30Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+792.60 грн
10+695.32 грн
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2040.32 грн
5+1622.68 грн
10+1607.53 грн
В кошику  од. на суму  грн.
IXFT120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFT120N15P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 200ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+753.10 грн
10+576.51 грн
30+452.91 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa
IXFT120N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO268HV
Polarisation: unipolar
Gate charge: 122nC
Reverse recovery time: 140ns
On-state resistance: 12mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 480W
Kind of package: tube
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+889.63 грн
В кошику  од. на суму  грн.
IXXN200N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F323B2A9A45820&compId=IXXN200N60C3H1.pdf?ci_sign=c226e5dec3e51a0405118c87d36ddf9c69c0fdda
IXXN200N60C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
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IXGX55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba
IXGX55N120A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товару немає в наявності
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MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
MMIX1F210N30P3
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3469.23 грн
3+2845.07 грн
10+2558.01 грн
20+2554.82 грн
В кошику  од. на суму  грн.
IX4427NTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4427NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+100.47 грн
10+58.61 грн
25+51.51 грн
50+46.97 грн
100+43.06 грн
250+38.67 грн
500+37.88 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866
IXFN170N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
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IXTT1N250HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14B3820&compId=IXTT1N250HV.pdf?ci_sign=35d38b5601b2a04ee4448180fd9ae245a739e2e3
IXTT1N250HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 250W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.5µs
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IXTH24N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59
IXTH24N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXGH32N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6
IXGH32N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 155nC
Turn-on time: 90ns
Turn-off time: 920ns
Power dissipation: 350W
Collector current: 32A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXGH6N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A99DD112ACB8BF&compId=IXG_6N170.pdf?ci_sign=da939209e45ad284a3aacd5ea8533deede4f01af
IXGH6N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 20nC
Turn-on time: 85ns
Turn-off time: 0.6µs
Power dissipation: 75W
Collector current: 6A
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXGH16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
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IXGH16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGH6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8
IXGH6N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXGH10N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAED5175596B820&compId=IXGH(t)10N170.pdf?ci_sign=3b7d3b6c182f8b0f27b026b278621c2bcff2c55b
IXGH10N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
IXTP130N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F130D820&compId=IXTA(P)130N10T.pdf?ci_sign=2932da386061339a6cff57dbeaf4458030129d04
IXTP130N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP10P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af
IXTP10P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.90 грн
10+132.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LDA203S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6
LDA203S
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Collector-emitter voltage: 500mV
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.19 грн
6+76.55 грн
25+59.80 грн
100+48.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+246.45 грн
100+212.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+320.30 грн
10+238.42 грн
50+217.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXBH42N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7
IXBH42N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXFA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a
IXFA3N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
на замовлення 321 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+670.66 грн
3+570.13 грн
5+531.85 грн
10+470.46 грн
50+436.17 грн
В кошику  од. на суму  грн.
IXFK120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFK120N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+429.36 грн
В кошику  од. на суму  грн.
IXFP270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFP270N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFA270N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
LCC110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 80 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+309.14 грн
4+241.61 грн
11+228.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1
LCC110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Contacts configuration: SPDT
Turn-off time: 4ms
Turn-on time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+474.01 грн
4+242.40 грн
11+229.65 грн
В кошику  од. на суму  грн.
CPC1977J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2
CPC1977J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
товару немає в наявності
В кошику  од. на суму  грн.
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+401.02 грн
3+335.70 грн
10+296.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXBT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33
IXBT16N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1071.68 грн
3+873.93 грн
В кошику  од. на суму  грн.
IXBT16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBT16N170AHV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1057.94 грн
3+873.93 грн
10+784.63 грн
В кошику  од. на суму  грн.
IXGP30N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c
IXGP30N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+772.85 грн
В кошику  од. на суму  грн.
LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+182.91 грн
50+154.69 грн
250+138.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCB716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c
LCB716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+523.82 грн
50+445.74 грн
100+381.15 грн
В кошику  од. на суму  грн.
LCB717 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86CE0C7&compId=LCB717.pdf?ci_sign=87a05df09da7b5fc5d647e258aa9681fbe313cf2
LCB717
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Case: DIP6
On-state resistance: 0.3Ω
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+420.77 грн
3+339.69 грн
8+321.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LOC110P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
товару немає в наявності
В кошику  од. на суму  грн.
LOC110PTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
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LOC110STR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110STR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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DSEI120-06A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b
DSEI120-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+665.51 грн
В кошику  од. на суму  грн.
IXFT50N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFT50N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.105Ω
Drain current: 50A
Power dissipation: 890W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 218ns
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DSEP29-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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MIXA60HU1200VA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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VBO22-08NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B12C9F6B6540C7&compId=VBO22-08NO8.pdf?ci_sign=1fbe7e5633960b7d58e4762058e773b0db93c70e
VBO22-08NO8
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+714.46 грн
2+578.90 грн
5+547.01 грн
10+526.27 грн
В кошику  од. на суму  грн.
VBO22-16NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd
VBO22-16NO8
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+917.11 грн
2+806.95 грн
3+770.27 грн
5+712.86 грн
10+663.42 грн
В кошику  од. на суму  грн.
IX2120B pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c
IX2120B
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.23 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH140N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+858.72 грн
10+743.16 грн
30+682.56 грн
В кошику  од. на суму  грн.
IXFN140N20P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e
IXFN140N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee
IXFK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 18mΩ
Drain-source voltage: 200V
Power dissipation: 830W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239
IXFR140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d
IXTK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Technology: PolarHT™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 180ns
Gate charge: 240nC
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Power dissipation: 800W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXTP26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTP26P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+133.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXTA26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTA26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXDD614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+429.36 грн
10+265.53 грн
50+226.46 грн
В кошику  од. на суму  грн.
IXDI630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+744.51 грн
10+471.25 грн
50+406.67 грн
В кошику  од. на суму  грн.
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