| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DFE250X600NA | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw Technology: FRED Semiconductor structure: double independent Load current: 125A x2 Max. forward impulse current: 1.2kA Max. off-state voltage: 0.6kV Mechanical mounting: screw Type of semiconductor module: diode Electrical mounting: screw Case: SOT227B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DFE25I600HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO247-2; 35ns Kind of package: tube Reverse recovery time: 35ns Type of diode: rectifying Technology: FRED Max. forward voltage: 1.4V Semiconductor structure: single diode Load current: 25A Max. forward impulse current: 0.24kA Max. off-state voltage: 0.6kV Case: TO247-2 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXHX40N150V1HV | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA Type of thyristor: thyristor Max. off-state voltage: 1.5kV Case: TO247PLUS-HV Mounting: THT Kind of package: tube Max. forward impulse current: 7.6kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSEP2X25-12C | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; 25Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 25A x2 Case: SOT227B Max. forward voltage: 2.95V Electrical mounting: screw Mechanical mounting: screw |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| MCMA700PD1600CB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 700A Case: ComPack Max. forward voltage: 1.11V Max. forward impulse current: 19kA Electrical mounting: FASTON connectors; screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXDI609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 893 шт: термін постачання 21-30 дні (днів) |
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IXDI609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXDD609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 1081 шт: термін постачання 21-30 дні (днів) |
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IXDD609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1010N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 4.09x3.81x2.03mm On-state resistance: 11.5Ω Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 1.5kV Relay variant: 1-phase; current source Case: SOP4 Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1010NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 4.09x3.81x2.03mm On-state resistance: 11.5Ω Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 1.5kV Relay variant: 1-phase; current source Case: SOP4 Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFA12N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Reverse recovery time: 300ns Gate charge: 29nC On-state resistance: 0.5Ω Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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IXTP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Reverse recovery time: 300ns Gate charge: 29nC On-state resistance: 0.5Ω Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V Kind of channel: enhancement Technology: Polar™ |
на замовлення 282 шт: термін постачання 21-30 дні (днів) |
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IXFH52N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 960W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 113nC On-state resistance: 0.12Ω Drain current: 52A Drain-source voltage: 500V Kind of channel: enhancement |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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IXTB62N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 800W Case: PLUS264™ Mounting: THT Kind of package: tube Reverse recovery time: 0.5µs Gate charge: 550nC On-state resistance: 0.1Ω Drain current: 62A Drain-source voltage: 500V Kind of channel: enhancement Features of semiconductor devices: linear power mosfet |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXTN62N50L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Polarisation: unipolar Power dissipation: 800W Case: SOT227B Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 0.5µs Gate charge: 550nC On-state resistance: 0.1Ω Drain current: 62A Pulsed drain current: 150A Gate-source voltage: ±40V Drain-source voltage: 500V Kind of channel: enhancement Technology: Linear™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTP02N50D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube Reverse recovery time: 5ns Gate charge: 0.12µC On-state resistance: 30Ω Drain current: 0.2A Drain-source voltage: 500V Kind of channel: depletion |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFH42N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 830W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 92nC On-state resistance: 0.145Ω Drain current: 42A Drain-source voltage: 500V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC On-state resistance: 0.5Ω Drain current: 12A Drain-source voltage: 500V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFT52N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 960W Case: TO268 Mounting: SMD Kind of package: tube Gate charge: 113nC On-state resistance: 0.12Ω Drain current: 52A Drain-source voltage: 500V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CLA50E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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CLA50E1200TC-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 555A |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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| CLA50E1200TC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 555A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PD2401 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase Case: DIP4 Mounting: THT Type of relay: solid state Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 500V AC Insulation voltage: 3.75kV Relay variant: 1-phase |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IX4427N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting |
на замовлення 1128 шт: термін постачання 21-30 дні (днів) |
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IX4428N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Number of channels: 2 Output current: -1.5...1.5A |
на замовлення 524 шт: термін постачання 21-30 дні (днів) |
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IX4427MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Supply voltage: 4.5...30V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Number of channels: 2 Output current: -1.5...1.5A |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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IX4340N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Number of channels: 2 Output current: -5...5A |
на замовлення 823 шт: термін постачання 21-30 дні (днів) |
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IX4340NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Number of channels: 2 Output current: -5...5A |
на замовлення 909 шт: термін постачання 21-30 дні (днів) |
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IX4340UE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Number of channels: 2 Output current: -5...5A |
на замовлення 1775 шт: термін постачання 21-30 дні (днів) |
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IX4428MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Supply voltage: 4.5...30V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Number of channels: 2 Output current: -1.5...1.5A |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DSA60C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 0.66V Load current: 30A x2 Power dissipation: 160W |
на замовлення 299 шт: термін постачання 21-30 дні (днів) |
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DSA60C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 490A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.67V Load current: 30A x2 Power dissipation: 175W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA60C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward impulse current: 0.44kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.78V Load current: 30A x2 Power dissipation: 175W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA60C60HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 0.75V Load current: 30A x2 Power dissipation: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA60C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.45kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.77V Load current: 30A x2 Power dissipation: 175W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTQ26N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSS16-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 100V Load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.64V Max. forward impulse current: 230A Kind of package: tube Power dissipation: 105W Max. load current: 35A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCO150-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single thyristor Case: SOT227B Type of semiconductor module: thyristor Gate current: 150/200mA Max. forward voltage: 1.89V Load current: 158A Max. off-state voltage: 1.2kV Kind of package: bulk |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IXYH40N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 64ns Turn-off time: 160ns Technology: GenX3™; Planar; XPT™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFK80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 80A Power dissipation: 1.3kW Case: TO264 On-state resistance: 77mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXFR80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 540W Case: ISOPLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFN80N60P3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Pulsed drain current: 200A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhancement Mechanical mounting: screw Reverse recovery time: 250ns Electrical mounting: screw Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFX80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 80A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
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| DFE250X600NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Technology: FRED
Semiconductor structure: double independent
Load current: 125A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Technology: FRED
Semiconductor structure: double independent
Load current: 125A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
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| DFE25I600HA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO247-2; 35ns
Kind of package: tube
Reverse recovery time: 35ns
Type of diode: rectifying
Technology: FRED
Max. forward voltage: 1.4V
Semiconductor structure: single diode
Load current: 25A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: TO247-2
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO247-2; 35ns
Kind of package: tube
Reverse recovery time: 35ns
Type of diode: rectifying
Technology: FRED
Max. forward voltage: 1.4V
Semiconductor structure: single diode
Load current: 25A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: TO247-2
Mounting: THT
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| IXHX40N150V1HV |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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| DSEP2X25-12C | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 25Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 25A x2
Case: SOT227B
Max. forward voltage: 2.95V
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 25Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 25A x2
Case: SOT227B
Max. forward voltage: 2.95V
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1907.79 грн |
| 5+ | 1723.62 грн |
| MCMA700PD1600CB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.11V
Max. forward impulse current: 19kA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.11V
Max. forward impulse current: 19kA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Mechanical mounting: screw
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| IXDI609SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 893 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 190.33 грн |
| 10+ | 109.84 грн |
| 25+ | 94.98 грн |
| 50+ | 85.89 грн |
| 100+ | 78.46 грн |
| 200+ | 75.98 грн |
| IXDI609SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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| IXDD609SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1081 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.96 грн |
| 10+ | 82.59 грн |
| 25+ | 75.16 грн |
| IXDD609SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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| CPC1010N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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| CPC1010NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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| IXFA12N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 208.12 грн |
| 50+ | 175.91 грн |
| IXTP12N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Polar™
на замовлення 282 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.35 грн |
| 3+ | 185.00 грн |
| 10+ | 163.52 грн |
| 50+ | 147.83 грн |
| 250+ | 145.36 грн |
| IXFH52N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 809.36 грн |
| 3+ | 680.53 грн |
| 10+ | 628.50 грн |
| 30+ | 586.38 грн |
| 120+ | 554.99 грн |
| IXTB62N50L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Drain-source voltage: 500V
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Drain-source voltage: 500V
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3329.96 грн |
| 3+ | 2735.32 грн |
| 10+ | 2457.83 грн |
| IXTN62N50L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Pulsed drain current: 150A
Gate-source voltage: ±40V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Linear™
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Pulsed drain current: 150A
Gate-source voltage: ±40V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Linear™
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| IXTP02N50D |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 5ns
Gate charge: 0.12µC
On-state resistance: 30Ω
Drain current: 0.2A
Drain-source voltage: 500V
Kind of channel: depletion
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 5ns
Gate charge: 0.12µC
On-state resistance: 30Ω
Drain current: 0.2A
Drain-source voltage: 500V
Kind of channel: depletion
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| IXFH42N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 92nC
On-state resistance: 0.145Ω
Drain current: 42A
Drain-source voltage: 500V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 92nC
On-state resistance: 0.145Ω
Drain current: 42A
Drain-source voltage: 500V
Kind of channel: enhancement
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| IXFP12N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Drain-source voltage: 500V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Drain-source voltage: 500V
Kind of channel: enhancement
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| IXFT52N50P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
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| CLA50E1200HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
на замовлення 160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 318.79 грн |
| 5+ | 281.63 грн |
| 10+ | 268.41 грн |
| CLA50E1200TC-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 604.80 грн |
| 10+ | 482.32 грн |
| 30+ | 423.68 грн |
| CLA50E1200TC-TRL |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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| PD2401 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 449.15 грн |
| 25+ | 398.90 грн |
| IX4427N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.60 грн |
| 10+ | 47.16 грн |
| 25+ | 39.72 грн |
| IX4428N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 524 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.14 грн |
| 11+ | 39.72 грн |
| IX4427MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.39 грн |
| 10+ | 72.68 грн |
| 25+ | 56.99 грн |
| 50+ | 46.25 грн |
| IX4340N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 823 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.39 грн |
| 10+ | 58.31 грн |
| 50+ | 48.40 грн |
| 100+ | 44.43 грн |
| 300+ | 39.56 грн |
| IX4340NE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 909 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 86.27 грн |
| 10+ | 55.42 грн |
| 25+ | 48.07 грн |
| 100+ | 39.31 грн |
| 300+ | 39.23 грн |
| IX4340UE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 1775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.18 грн |
| 10+ | 55.09 грн |
| 25+ | 47.90 грн |
| 80+ | 41.29 грн |
| 240+ | 40.80 грн |
| IX4428MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.94 грн |
| DSA60C45HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
на замовлення 299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 269.49 грн |
| 3+ | 225.47 грн |
| 10+ | 199.04 грн |
| 30+ | 182.52 грн |
| DSA60C45PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
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| DSA60C100PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
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| DSA60C60HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
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| DSA60C60PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
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| IXTT26N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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| IXFT26N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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| IXTQ26N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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| DSS16-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 100V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 100V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
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| MCO150-12IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2832.78 грн |
| IXYH40N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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| IXFK80N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1286.09 грн |
| 10+ | 875.44 грн |
| IXFR80N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IXFN80N60P3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
товару немає в наявності
В кошику
од. на суму грн.
| IXFX80N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.