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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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DSEI120-06A DSEI120-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+671.74 грн
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IXFT50N85XHV IXFT50N85XHV IXYS IXF_50N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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DSEP29-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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VBO22-16NO8 VBO22-16NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+925.70 грн
2+814.51 грн
3+777.49 грн
5+719.54 грн
10+669.64 грн
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IX2120B IX2120B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
4+114.29 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
1+866.76 грн
10+750.12 грн
30+688.95 грн
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IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 200V; 115A; SOT227B
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXTP26P10T IXTP26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
3+135.22 грн
Мінімальне замовлення: 3
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IXTY26P10T IXTY26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXTA26P10T IXTA26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXDD614YI IXDD614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
1+433.38 грн
10+268.02 грн
50+228.58 грн
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IXDI630MYI IXDI630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
1+751.48 грн
10+475.67 грн
50+410.48 грн
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IXTH270N04T4 IXTH270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Case: TO247-3
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+433.38 грн
В кошику  од. на суму  грн.
IXTP270N04T4 IXTP270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Case: TO220AB
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
2+243.56 грн
3+203.63 грн
10+180.29 грн
50+167.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA80E1200HF CLA80E1200HF IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
1+593.73 грн
5+475.67 грн
10+439.45 грн
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VBO21-12NO7 VBO21-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+929.17 грн
3+766.22 грн
10+688.95 грн
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IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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MDI550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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MID550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
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IXYX50N170C IXYX50N170C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
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IXYN100N65A3 IXYN100N65A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
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IXYN100N120C3 IXYN100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
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IXBOD1-36R IXBOD1-36R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+8893.01 грн
3+7243.68 грн
10+6533.80 грн
20+6293.95 грн
В кошику  од. на суму  грн.
IXBOD1-38R IXBOD1-38R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+8815.00 грн
3+7243.68 грн
10+6519.31 грн
В кошику  од. на суму  грн.
IXGH30N120B3D1 IXGH30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXGH120N30B3 IXGH120N30B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Kind of package: tube
Gate charge: 225nC
Turn-on time: 51ns
Turn-off time: 356ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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IXGH120N30C3 IXGH120N30C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Kind of package: tube
Gate charge: 230nC
Turn-on time: 66ns
Turn-off time: 233ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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IXGH28N60B3D1 IXGH28N60B3D1 IXYS IXGH28N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 80nC
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXTP18P10T IXTP18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
2+220.16 грн
10+129.58 грн
25+115.09 грн
50+106.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA70I1200NA IXA70I1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+2706.91 грн
3+2260.03 грн
В кошику  од. на суму  грн.
IXTP230N075T2 IXTP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
2+409.98 грн
10+296.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC3720CTR CPC3720CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
на замовлення 381 шт:
термін постачання 21-30 дні (днів)
11+42.47 грн
19+22.21 грн
25+20.28 грн
100+17.87 грн
250+16.42 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3730CTR CPC3730CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Kind of channel: depletion
Case: SOT89
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.14A
Power dissipation: 1.4W
Gate-source voltage: ±15V
On-state resistance: 35Ω
Drain-source voltage: 350V
Kind of package: reel; tape
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IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
On-state resistance: 5.5Ω
Drain current: 3A
Drain-source voltage: 1kV
на замовлення 184 шт:
термін постачання 21-30 дні (днів)
2+288.63 грн
10+195.58 грн
25+184.31 грн
50+176.26 грн
100+168.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFT170N25X3HV IXFT170N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
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LBA716STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXFT100N30X3HV IXFT100N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXBT2N250 IXBT2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-off time: 252ns
Turn-on time: 310ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1427.56 грн
В кошику  од. на суму  грн.
IXTP3N120 IXTP3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
1+518.33 грн
5+439.45 грн
10+418.52 грн
50+374.26 грн
В кошику  од. на суму  грн.
DSI30-12AS-TUB DSI30-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 255A
Semiconductor structure: single diode
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
2+225.36 грн
10+152.92 грн
50+120.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1219Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Ucntrl: 5÷12VDC; 200mA; max.60VAC
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
On-state resistance: 16Ω
Control voltage: 5...12V DC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Manufacturer series: OptoMOS
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IXTP130N15X4 IXTP130N15X4 IXYS IXTH(P)130N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Gate charge: 87nC
Reverse recovery time: 93ns
On-state resistance: 8.5mΩ
Power dissipation: 400W
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
2+432.52 грн
3+361.38 грн
10+319.53 грн
50+286.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH130N15X3 IXFH130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+663.08 грн
В кошику  од. на суму  грн.
IXDD630CI IXDD630CI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
1+574.66 грн
10+440.25 грн
В кошику  од. на суму  грн.
IXBH12N300 IXBH12N300 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
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IXCP10M45S IXCP10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 507 шт:
термін постачання 21-30 дні (днів)
3+199.36 грн
10+144.87 грн
50+138.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXCY10M45S IXCY10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
3+198.49 грн
10+140.04 грн
25+123.14 грн
70+119.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VHFD29-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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LOC110P LOC110.pdf
LOC110P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR LOC110.pdf
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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DSEI120-06A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b
DSEI120-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+671.74 грн
В кошику  од. на суму  грн.
IXFT50N85XHV IXF_50N85X.pdf
IXFT50N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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DSEP29-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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MIXA60HU1200VA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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VBO22-16NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd
VBO22-16NO8
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+925.70 грн
2+814.51 грн
3+777.49 грн
5+719.54 грн
10+669.64 грн
В кошику  од. на суму  грн.
IX2120B pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c
IX2120B
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.29 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+866.76 грн
10+750.12 грн
30+688.95 грн
В кошику  од. на суму  грн.
IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 200V; 115A; SOT227B
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXTP26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTP26P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+135.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXTA26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTA26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXDD614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+433.38 грн
10+268.02 грн
50+228.58 грн
В кошику  од. на суму  грн.
IXDI630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+751.48 грн
10+475.67 грн
50+410.48 грн
В кошику  од. на суму  грн.
IXTH270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTH270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Case: TO247-3
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+433.38 грн
В кошику  од. на суму  грн.
IXTP270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTP270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Case: TO220AB
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+243.56 грн
3+203.63 грн
10+180.29 грн
50+167.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA80E1200HF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf
CLA80E1200HF
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+593.73 грн
5+475.67 грн
10+439.45 грн
В кошику  од. на суму  грн.
VBO21-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208
VBO21-12NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+929.17 грн
3+766.22 грн
10+688.95 грн
В кошику  од. на суму  грн.
IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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MDI550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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MID550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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IXYX100N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953
IXYX100N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
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IXYX50N170C pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b
IXYX50N170C
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
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IXYN100N65A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b
IXYN100N65A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
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IXYN100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405
IXYN100N120C3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
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IXBOD1-36R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-36R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+8893.01 грн
3+7243.68 грн
10+6533.80 грн
20+6293.95 грн
В кошику  од. на суму  грн.
IXBOD1-38R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-38R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+8815.00 грн
3+7243.68 грн
10+6519.31 грн
В кошику  од. на суму  грн.
IXGH30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGH30N120B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXGH120N30B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27
IXGH120N30B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Kind of package: tube
Gate charge: 225nC
Turn-on time: 51ns
Turn-off time: 356ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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IXGH120N30C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f
IXGH120N30C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Kind of package: tube
Gate charge: 230nC
Turn-on time: 66ns
Turn-off time: 233ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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IXGH28N60B3D1 IXGH28N60B3D1.pdf
IXGH28N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
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IXGH30N120C3H1 IXGH30N120C3H1.pdf
IXGH30N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 80nC
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
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IXGH48N60A3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380
IXGH48N60A3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXTP18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTP18P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+220.16 грн
10+129.58 грн
25+115.09 грн
50+106.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA70I1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae
IXA70I1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2706.91 грн
3+2260.03 грн
В кошику  од. на суму  грн.
IXTP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988
IXTP230N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+409.98 грн
10+296.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC3720CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94
CPC3720CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
на замовлення 381 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.47 грн
19+22.21 грн
25+20.28 грн
100+17.87 грн
250+16.42 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3730CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869
CPC3730CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Kind of channel: depletion
Case: SOT89
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.14A
Power dissipation: 1.4W
Gate-source voltage: ±15V
On-state resistance: 35Ω
Drain-source voltage: 350V
Kind of package: reel; tape
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IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
On-state resistance: 5.5Ω
Drain current: 3A
Drain-source voltage: 1kV
на замовлення 184 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+288.63 грн
10+195.58 грн
25+184.31 грн
50+176.26 грн
100+168.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFT170N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef
IXFT170N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
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LBA716STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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IXTA380N036T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0
IXTA380N036T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXFT100N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT100N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXBT2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0
IXBT2N250
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-off time: 252ns
Turn-on time: 310ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1427.56 грн
В кошику  од. на суму  грн.
IXTP3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTP3N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+518.33 грн
5+439.45 грн
10+418.52 грн
50+374.26 грн
В кошику  од. на суму  грн.
DSI30-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0
DSI30-12AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 255A
Semiconductor structure: single diode
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+225.36 грн
10+152.92 грн
50+120.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1219Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Ucntrl: 5÷12VDC; 200mA; max.60VAC
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
On-state resistance: 16Ω
Control voltage: 5...12V DC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Manufacturer series: OptoMOS
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IXTP130N15X4 IXTH(P)130N15X4.pdf
IXTP130N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Gate charge: 87nC
Reverse recovery time: 93ns
On-state resistance: 8.5mΩ
Power dissipation: 400W
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+432.52 грн
3+361.38 грн
10+319.53 грн
50+286.53 грн
Мінімальне замовлення: 2
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IXFH130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFH130N15X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+663.08 грн
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IXDD630CI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+574.66 грн
10+440.25 грн
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IXBH12N300 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602
IXBH12N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
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IXCP10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCP10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 507 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+199.36 грн
10+144.87 грн
50+138.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXCY10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCY10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+198.49 грн
10+140.04 грн
25+123.14 грн
70+119.12 грн
Мінімальне замовлення: 3
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VHFD29-16IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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