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IXFA10N80P IXFA10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
2+328.19 грн
3+270.88 грн
10+209.93 грн
50+195.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD609SIA IXDD609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 971 шт:
термін постачання 14-30 дні (днів)
4+123.07 грн
10+83.80 грн
25+78.73 грн
50+77.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD609SIATR IXDD609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
3+213.32 грн
50+180.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 500V
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Gate-source voltage: ±30V
Power dissipation: 200W
Kind of channel: enhancement
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
2+227.91 грн
3+189.62 грн
10+167.61 грн
50+151.53 грн
250+148.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP12N50P IXFP12N50P IXYS IXF_12N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
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CLA50E1200HB CLA50E1200HB IXYS CLA50E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
2+329.29 грн
5+292.89 грн
10+275.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS CLA50E1200TC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
1+619.91 грн
10+494.36 грн
30+434.26 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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PD2401 PD2401 IXYS PD2401.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 100mA
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
1+844.17 грн
25+750.01 грн
В кошику  од. на суму  грн.
IX4428N IX4428N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
7+66.55 грн
10+45.20 грн
25+41.65 грн
50+40.72 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DSS16-01A DSS16-01A IXYS DSS16-01A_AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
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IXYH40N65C3 IXYH40N65C3 IXYS IXYH40N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+1318.21 грн
В кошику  од. на суму  грн.
IXFR80N60P3 IXFR80N60P3 IXYS IXFR80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
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IXFX80N60P3 IXFX80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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CLA80E1200HF CLA80E1200HF IXYS CLA80E1200HF.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Case: PLUS247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Max. forward impulse current: 765A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 38mA
на замовлення 203 шт:
термін постачання 14-30 дні (днів)
1+602.59 грн
5+489.28 грн
10+462.20 грн
В кошику  од. на суму  грн.
IXFH10N100P IXFH10N100P IXYS IXFH10N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 300ns
On-state resistance: 1.4Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 380W
Drain-source voltage: 1kV
на замовлення 315 шт:
термін постачання 14-30 дні (днів)
1+584.35 грн
5+449.50 грн
10+399.55 грн
30+377.54 грн
В кошику  од. на суму  грн.
IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Technology: X2-Class
Power dissipation: 540W
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IXTH11P50 IXTH11P50 IXYS DS94535L(IXTH-T11P50).pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
1+833.23 грн
3+705.99 грн
10+595.10 грн
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IXFQ140N20X3 IXFQ140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
1+825.93 грн
3+679.75 грн
10+610.33 грн
30+604.41 грн
В кошику  од. на суму  грн.
IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS IXGH48N60A3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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DSS16-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 710pF
Leakage current: 0.5mA
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DSS16-01AS-TRL IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Capacitance: 334pF
Leakage current: 0.5mA
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DPS30I600HA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
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IXFR24N100Q3 IXFR24N100Q3 IXYS IXFR24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+2036.58 грн
10+1709.11 грн
В кошику  од. на суму  грн.
IXFN24N100 IXFN24N100 IXYS IXFN24N100-DTE.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
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IXFK24N100Q3 IXFK24N100Q3 IXYS IXFK(X)24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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IXTX24N100 IXTX24N100 IXYS IXTX24N100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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IXTX120P20T IXTX120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
1+2063.93 грн
3+1693.02 грн
10+1516.95 грн
В кошику  од. на суму  грн.
CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+731.13 грн
В кошику  од. на суму  грн.
IXBH16N170 IXBH16N170 IXYS IXBH16N170_IXBT16N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
на замовлення 330 шт:
термін постачання 14-30 дні (днів)
1+1192.41 грн
5+941.32 грн
10+851.59 грн
В кошику  од. на суму  грн.
IXBH16N170A IXBH16N170A IXYS IXBH(T)16N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
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IXTQ50N20P IXTQ50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 215 шт:
термін постачання 14-30 дні (днів)
2+368.30 грн
10+243.80 грн
30+217.55 грн
60+212.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP50N25T IXTP50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
2+364.65 грн
10+284.43 грн
50+231.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA50N20P IXTA50N20P IXYS IXTA50N20P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTP50N20PM IXTP50N20PM IXYS IXTP50N20PM-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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DSB15IM30UC-TRL IXYS dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
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DPF240X400NA DPF240X400NA IXYS DPF240X400NA.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
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LBA716S LBA716S IXYS lba716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
1+577.97 грн
10+502.83 грн
50+407.17 грн
100+386.86 грн
В кошику  од. на суму  грн.
IXYP60N65A5 IXYS IXYP60N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 128nC
Gate-emitter voltage: ±20V
Collector current: 134A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
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IXYA60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
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IXYH60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA20N65C3-TRL IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 650V
Gate charge: 30nC
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 29nC
Collector current: 58A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
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IXYP20N65C3 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Collector current: 50A
Pulsed collector current: 105A
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CPC1006N CPC1006N IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
на замовлення 2131 шт:
термін постачання 14-30 дні (днів)
6+72.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Kind of output: MOSFET
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
на замовлення 483 шт:
термін постачання 14-30 дні (днів)
2+357.36 грн
50+244.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXP12N65B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
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DSEC16-06A DSEC16-06A IXYS Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
3+170.15 грн
10+124.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEC16-06AC DSEC16-06AC IXYS Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
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DSEC16-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Kind of package: reel; tape
Technology: FRED
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MCD200-16IO1 MCD200-16IO1 IXYS MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 216A
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8kA
Electrical mounting: FASTON connectors; screw
Max. load current: 340A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
1+6162.60 грн
В кошику  од. на суму  грн.
IXFK100N65X2 IXFK100N65X2 IXYS IXFK(X)100N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Case: TO264
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
Reverse recovery time: 200ns
Gate charge: 183nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+1288.13 грн
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IXFA10N80P IXFA(H,P,Q)10N80P.pdf
IXFA10N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+328.19 грн
3+270.88 грн
10+209.93 грн
50+195.54 грн
Мінімальне замовлення: 2
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IXDD609SIA IXDD609CI.pdf
IXDD609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 971 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+123.07 грн
10+83.80 грн
25+78.73 грн
50+77.03 грн
Мінімальне замовлення: 4
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IXDD609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDD609SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+213.32 грн
50+180.31 грн
Мінімальне замовлення: 3
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IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 500V
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Gate-source voltage: ±30V
Power dissipation: 200W
Kind of channel: enhancement
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+227.91 грн
3+189.62 грн
10+167.61 грн
50+151.53 грн
250+148.99 грн
Мінімальне замовлення: 2
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IXFP12N50P IXF_12N50P.pdf
IXFP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
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CLA50E1200HB CLA50E1200HB.pdf
CLA50E1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+329.29 грн
5+292.89 грн
10+275.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200TC-TUB CLA50E1200TC.pdf
CLA50E1200TC-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+619.91 грн
10+494.36 грн
30+434.26 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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PD2401 PD2401.pdf
PD2401
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 100mA
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+844.17 грн
25+750.01 грн
В кошику  од. на суму  грн.
IX4428N IX4426-27-28.pdf
IX4428N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+66.55 грн
10+45.20 грн
25+41.65 грн
50+40.72 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DSS16-01A DSS16-01A_AR.pdf
DSS16-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
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IXYH40N65C3 IXYH40N65C3.pdf
IXYH40N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1318.21 грн
В кошику  од. на суму  грн.
IXFR80N60P3 IXFR80N60P3.pdf
IXFR80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
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IXFX80N60P3 IXFK(X)80N60P3.pdf
IXFX80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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CLA80E1200HF CLA80E1200HF.pdf
CLA80E1200HF
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Case: PLUS247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Max. forward impulse current: 765A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 38mA
на замовлення 203 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+602.59 грн
5+489.28 грн
10+462.20 грн
В кошику  од. на суму  грн.
IXFH10N100P IXFH10N100P.pdf
IXFH10N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 300ns
On-state resistance: 1.4Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 380W
Drain-source voltage: 1kV
на замовлення 315 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+584.35 грн
5+449.50 грн
10+399.55 грн
30+377.54 грн
В кошику  од. на суму  грн.
IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Technology: X2-Class
Power dissipation: 540W
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IXTH11P50 DS94535L(IXTH-T11P50).pdf
IXTH11P50
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+833.23 грн
3+705.99 грн
10+595.10 грн
В кошику  од. на суму  грн.
IXFQ140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFQ140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+825.93 грн
3+679.75 грн
10+610.33 грн
30+604.41 грн
В кошику  од. на суму  грн.
IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXGH48N60A3D1 IXGH48N60A3D1.pdf
IXGH48N60A3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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DSS16-0045AS-TRL media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 710pF
Leakage current: 0.5mA
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DSS16-01AS-TRL
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Capacitance: 334pF
Leakage current: 0.5mA
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DPS30I600HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
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IXFR24N100Q3 IXFR24N100Q3.pdf
IXFR24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2036.58 грн
10+1709.11 грн
В кошику  од. на суму  грн.
IXFN24N100 description IXFN24N100-DTE.pdf
IXFN24N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
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IXFK24N100Q3 IXFK(X)24N100Q3.pdf
IXFK24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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IXTX24N100 IXTX24N100.pdf
IXTX24N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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IXTX120P20T IXT_120P20T.pdf
IXTX120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2063.93 грн
3+1693.02 грн
10+1516.95 грн
В кошику  од. на суму  грн.
CPC2907B CPC2907B.pdf
CPC2907B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+731.13 грн
В кошику  од. на суму  грн.
IXBH16N170 IXBH16N170_IXBT16N170.pdf
IXBH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
на замовлення 330 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1192.41 грн
5+941.32 грн
10+851.59 грн
В кошику  од. на суму  грн.
IXBH16N170A IXBH(T)16N170A.pdf
IXBH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
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IXTQ50N20P IXTA50N20P-DTE.pdf
IXTQ50N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 215 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+368.30 грн
10+243.80 грн
30+217.55 грн
60+212.47 грн
Мінімальне замовлення: 2
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IXTP50N25T IXTA(H,P,Q)50N25T.pdf
IXTP50N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+364.65 грн
10+284.43 грн
50+231.10 грн
Мінімальне замовлення: 2
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IXTA50N20P IXTA50N20P-DTE.pdf
IXTA50N20P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTP50N20PM IXTP50N20PM-DTE.pdf
IXTP50N20PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA(H,P,Q)50N25T.pdf
IXTA50N25T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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DSB15IM30UC-TRL dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
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DPF240X400NA DPF240X400NA.pdf
DPF240X400NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
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LBA716S lba716.pdf
LBA716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+577.97 грн
10+502.83 грн
50+407.17 грн
100+386.86 грн
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IXYP60N65A5 IXYP60N65A5.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 128nC
Gate-emitter voltage: ±20V
Collector current: 134A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
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IXYA60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
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IXYH60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA20N65C3-TRL littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 650V
Gate charge: 30nC
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 29nC
Collector current: 58A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
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IXYP20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 30nC
Collector current: 50A
Pulsed collector current: 105A
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CPC1006N CPC1006N.pdf
CPC1006N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
на замовлення 2131 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+72.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC1018N cpc1018n.pdf
CPC1018N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Kind of output: MOSFET
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
на замовлення 483 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+357.36 грн
50+244.64 грн
Мінімальне замовлення: 2
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IXXP12N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
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DSEC16-06A Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5
DSEC16-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+170.15 грн
10+124.44 грн
Мінімальне замовлення: 3
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DSEC16-06AC Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7
DSEC16-06AC
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
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DSEC16-12AS-TRL Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Kind of package: reel; tape
Technology: FRED
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MCD200-16IO1 MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD200-16IO1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 216A
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8kA
Electrical mounting: FASTON connectors; screw
Max. load current: 340A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+6162.60 грн
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IXFK100N65X2 IXFK(X)100N65X2.pdf
IXFK100N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Case: TO264
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
Reverse recovery time: 200ns
Gate charge: 183nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1288.13 грн
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