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IXFH10N100P IXFH10N100P IXYS IXFH10N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 321 шт:
термін постачання 14-30 дні (днів)
1+580.67 грн
5+446.66 грн
10+397.04 грн
30+375.16 грн
В кошику  од. на суму  грн.
IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXTH11P50 IXTH11P50 IXYS DS94535L(IXTH-T11P50).pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
Power dissipation: 300W
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
на замовлення 291 шт:
термін постачання 14-30 дні (днів)
1+827.98 грн
3+701.54 грн
10+591.35 грн
В кошику  од. на суму  грн.
IXBH6N170 IXBH6N170 IXYS IXBH6N170_IXBT6N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
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IXFQ140N20X3 IXFQ140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
1+820.73 грн
3+675.46 грн
10+606.49 грн
30+598.08 грн
В кошику  од. на суму  грн.
IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 18mΩ
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 830W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Drain current: 140A
Kind of channel: enhancement
Power dissipation: 520W
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 90ns
Gate charge: 127nC
On-state resistance: 9.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Technology: PolarHT™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 180ns
Gate charge: 240nC
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 800W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS IXGH48N60A3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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DSS16-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 710pF
Leakage current: 0.5mA
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DSS16-01AS-TRL IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Capacitance: 334pF
Leakage current: 0.5mA
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DPS30I600HA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
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IXFR24N100Q3 IXFR24N100Q3 IXYS IXFR24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.49Ω
Drain current: 18A
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+2023.74 грн
10+1698.34 грн
В кошику  од. на суму  грн.
IXFN24N100 IXFN24N100 IXYS IXFN24N100-DTE.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Power dissipation: 568W
Case: SOT227B
Gate charge: 250nC
Gate-source voltage: ±30V
Pulsed drain current: 96A
Drain-source voltage: 1kV
Polarisation: unipolar
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Reverse recovery time: 250ns
On-state resistance: 390mΩ
Drain current: 24A
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IXFK24N100Q3 IXFK24N100Q3 IXYS IXFK(X)24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: TO264
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
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IXTX24N100 IXTX24N100 IXYS IXTX24N100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Power dissipation: 568W
Case: PLUS247™
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Reverse recovery time: 850ns
On-state resistance: 0.4Ω
Drain current: 24A
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IXFX24N100Q3 IXFX24N100Q3 IXYS IXFK(X)24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: PLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
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IXTX120P20T IXTX120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
1+2050.92 грн
3+1682.35 грн
10+1588.98 грн
В кошику  од. на суму  грн.
CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+726.52 грн
В кошику  од. на суму  грн.
IXBH16N170 IXBH16N170 IXYS IXBH16N170_IXBT16N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
на замовлення 330 шт:
термін постачання 14-30 дні (днів)
1+1184.89 грн
5+935.39 грн
10+846.22 грн
В кошику  од. на суму  грн.
IXBH16N170A IXBH16N170A IXYS IXBH(T)16N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1536.38 грн
В кошику  од. на суму  грн.
MEE300-06DA IXYS PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.19V
Load current: 304A
Max. forward impulse current: 2.4kA
Kind of package: bulk
Max. off-state voltage: 0.6kV
Semiconductor structure: double series
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IXTQ50N20P IXTQ50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 215 шт:
термін постачання 14-30 дні (днів)
2+365.98 грн
10+242.26 грн
30+216.18 грн
60+211.14 грн
Мінімальне замовлення: 2
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IXTP50N20P IXTP50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
2+309.81 грн
10+236.37 грн
50+208.61 грн
100+196.84 грн
Мінімальне замовлення: 2
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IXTP50N25T IXTP50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
2+362.35 грн
10+282.64 грн
50+229.64 грн
Мінімальне замовлення: 2
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IXTA50N20P IXTA50N20P IXYS IXTA50N20P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTP50N20PM IXTP50N20PM IXYS IXTP50N20PM-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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DSB15IM30UC-TRL IXYS dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
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DPF240X400NA DPF240X400NA IXYS DPF240X400NA.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
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LBA716S LBA716S IXYS lba716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
1+574.33 грн
10+499.66 грн
50+404.61 грн
100+384.42 грн
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LCB716S LCB716S IXYS LCB716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
на замовлення 115 шт:
термін постачання 14-30 дні (днів)
1+552.59 грн
50+470.22 грн
100+402.08 грн
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LBA716STR IXYS LBA716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Contacts configuration: SPST-NO + SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Manufacturer series: OptoMOS
Case: DIP8
Type of relay: solid state
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LCB716STR IXYS LCB716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
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IXFX360N10T IXFX360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+901.35 грн
3+797.44 грн
10+690.61 грн
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IXTA60N10T IXTA60N10T IXYS IXTA(P)60N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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IXFK360N10T IXFK360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXYP60N65A5 IXYS IXYP60N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 134A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
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IXYH60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA20N65C3-TRL IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 58A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Gate charge: 29nC
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IXYP20N65C3 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 50A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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CPC1006N CPC1006N IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 1.5kV
на замовлення 2137 шт:
термін постачання 14-30 дні (днів)
6+72.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
на замовлення 493 шт:
термін постачання 14-30 дні (днів)
3+193.86 грн
50+132.91 грн
Мінімальне замовлення: 3
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IXXP12N65B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
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LCA715S LCA715S IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
1+642.27 грн
10+472.74 грн
В кошику  од. на суму  грн.
LCA715STR IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
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DSEC16-06A DSEC16-06A IXYS Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
3+169.08 грн
10+123.65 грн
Мінімальне замовлення: 3
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DSEC16-06AC DSEC16-06AC IXYS Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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DSEC16-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 40ns
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Technology: FRED
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MCD200-16IO1 MCD200-16IO1 IXYS MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
1+6123.76 грн
В кошику  од. на суму  грн.
IXFP130N15X3 IXFP130N15X3 IXYS IXF_130N15X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: ultra junction x-class
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
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IXFK100N65X2 IXFK100N65X2 IXYS IXFK(X)100N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Drain current: 100A
Power dissipation: 1.04kW
Drain-source voltage: 650V
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+1280.01 грн
В кошику  од. на суму  грн.
IXXH110N65B4 IXYS littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Collector current: 250A
Gate-emitter voltage: ±20V
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IXTA12N50P IXTA12N50P IXYS IXTA12N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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PS1201 PS1201 IXYS PS1201.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
2+342.42 грн
25+304.51 грн
100+274.22 грн
Мінімальне замовлення: 2
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IXYA50N65C5 IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
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IXFH10N100P IXFH10N100P.pdf
IXFH10N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 321 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+580.67 грн
5+446.66 грн
10+397.04 грн
30+375.16 грн
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IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXTH11P50 DS94535L(IXTH-T11P50).pdf
IXTH11P50
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
Power dissipation: 300W
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
на замовлення 291 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+827.98 грн
3+701.54 грн
10+591.35 грн
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IXBH6N170 IXBH6N170_IXBT6N170.pdf
IXBH6N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
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IXFQ140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFQ140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+820.73 грн
3+675.46 грн
10+606.49 грн
30+598.08 грн
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 18mΩ
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 830W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Drain current: 140A
Kind of channel: enhancement
Power dissipation: 520W
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 90ns
Gate charge: 127nC
On-state resistance: 9.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Technology: PolarHT™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 180ns
Gate charge: 240nC
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 800W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXGH48N60A3D1 IXGH48N60A3D1.pdf
IXGH48N60A3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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DSS16-0045AS-TRL media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 710pF
Leakage current: 0.5mA
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DSS16-01AS-TRL
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Capacitance: 334pF
Leakage current: 0.5mA
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DPS30I600HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
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IXFR24N100Q3 IXFR24N100Q3.pdf
IXFR24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.49Ω
Drain current: 18A
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2023.74 грн
10+1698.34 грн
В кошику  од. на суму  грн.
IXFN24N100 description IXFN24N100-DTE.pdf
IXFN24N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Power dissipation: 568W
Case: SOT227B
Gate charge: 250nC
Gate-source voltage: ±30V
Pulsed drain current: 96A
Drain-source voltage: 1kV
Polarisation: unipolar
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Reverse recovery time: 250ns
On-state resistance: 390mΩ
Drain current: 24A
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IXFK24N100Q3 IXFK(X)24N100Q3.pdf
IXFK24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: TO264
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
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IXTX24N100 IXTX24N100.pdf
IXTX24N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Power dissipation: 568W
Case: PLUS247™
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Reverse recovery time: 850ns
On-state resistance: 0.4Ω
Drain current: 24A
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IXFX24N100Q3 IXFK(X)24N100Q3.pdf
IXFX24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: PLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
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IXTX120P20T IXT_120P20T.pdf
IXTX120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2050.92 грн
3+1682.35 грн
10+1588.98 грн
В кошику  од. на суму  грн.
CPC2907B CPC2907B.pdf
CPC2907B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+726.52 грн
В кошику  од. на суму  грн.
IXBH16N170 IXBH16N170_IXBT16N170.pdf
IXBH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
на замовлення 330 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1184.89 грн
5+935.39 грн
10+846.22 грн
В кошику  од. на суму  грн.
IXBH16N170A IXBH(T)16N170A.pdf
IXBH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1536.38 грн
В кошику  од. на суму  грн.
MEE300-06DA PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.19V
Load current: 304A
Max. forward impulse current: 2.4kA
Kind of package: bulk
Max. off-state voltage: 0.6kV
Semiconductor structure: double series
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IXTQ50N20P IXTA50N20P-DTE.pdf
IXTQ50N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 215 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+365.98 грн
10+242.26 грн
30+216.18 грн
60+211.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP50N20P IXTA50N20P-DTE.pdf
IXTP50N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+309.81 грн
10+236.37 грн
50+208.61 грн
100+196.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP50N25T IXTA(H,P,Q)50N25T.pdf
IXTP50N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+362.35 грн
10+282.64 грн
50+229.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA50N20P IXTA50N20P-DTE.pdf
IXTA50N20P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTP50N20PM IXTP50N20PM-DTE.pdf
IXTP50N20PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA(H,P,Q)50N25T.pdf
IXTA50N25T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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DSB15IM30UC-TRL dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
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DPF240X400NA DPF240X400NA.pdf
DPF240X400NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
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LBA716S lba716.pdf
LBA716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+574.33 грн
10+499.66 грн
50+404.61 грн
100+384.42 грн
В кошику  од. на суму  грн.
LCB716S LCB716.pdf
LCB716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
на замовлення 115 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+552.59 грн
50+470.22 грн
100+402.08 грн
В кошику  од. на суму  грн.
LBA716STR LBA716.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Contacts configuration: SPST-NO + SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Manufacturer series: OptoMOS
Case: DIP8
Type of relay: solid state
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LCB716STR LCB716.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
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IXFX360N10T IXFK(X)360N10T.pdf
IXFX360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+901.35 грн
3+797.44 грн
10+690.61 грн
В кошику  од. на суму  грн.
IXTA60N10T IXTA(P)60N10T.pdf
IXTA60N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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IXFK360N10T IXFK(X)360N10T.pdf
IXFK360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXYP60N65A5 IXYP60N65A5.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 134A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
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IXYH60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA20N65C3-TRL littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 58A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Gate charge: 29nC
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IXYP20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 50A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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CPC1006N CPC1006N.pdf
CPC1006N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Kind of output: MOSFET
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 1.5kV
на замовлення 2137 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+72.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC1018N cpc1018n.pdf
CPC1018N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
на замовлення 493 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+193.86 грн
50+132.91 грн
Мінімальне замовлення: 3
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IXXP12N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
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LCA715S LCA715.pdf
LCA715S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+642.27 грн
10+472.74 грн
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LCA715STR LCA715.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
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DSEC16-06A Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5
DSEC16-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+169.08 грн
10+123.65 грн
Мінімальне замовлення: 3
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DSEC16-06AC Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7
DSEC16-06AC
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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DSEC16-12AS-TRL Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 40ns
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Technology: FRED
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MCD200-16IO1 MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD200-16IO1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+6123.76 грн
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IXFP130N15X3 IXF_130N15X3.pdf
IXFP130N15X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: ultra junction x-class
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
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IXFK100N65X2 IXFK(X)100N65X2.pdf
IXFK100N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Drain current: 100A
Power dissipation: 1.04kW
Drain-source voltage: 650V
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1280.01 грн
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IXXH110N65B4 littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Collector current: 250A
Gate-emitter voltage: ±20V
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IXTA12N50P IXTA12N50P-DTE.pdf
IXTA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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PS1201 PS1201.pdf
PS1201
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+342.42 грн
25+304.51 грн
100+274.22 грн
Мінімальне замовлення: 2
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IXYA50N65C5
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
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