Продукція > IXYS > Всі товари виробника IXYS (16262) > Сторінка 263 з 272

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PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
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PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXGH10N170 IXGH10N170 IXYS IXGH(t)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 110W
Case: TO247-3
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Pulsed collector current: 70A
Turn-on time: 0.3µs
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXFR20N120P IXFR20N120P IXYS IXFR20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 0.63Ω
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+1520.52 грн
2+1335.50 грн
3+1334.65 грн
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IXFX20N120P IXFX20N120P IXYS IXF_20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Power dissipation: 780W
Case: PLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXFK20N120P IXFK20N120P IXYS IXF_20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Power dissipation: 780W
Case: TO264
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 570mΩ
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXSA20N120L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: D2PAK-7
Mounting: SMD
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXSH20N120L2KHV IXYS ixsh20n120l2khv-datasheet?assetguid=9393cb5f-7bae-401e-ad69-960584edc726 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: TO247-4
Mounting: THT
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Reverse recovery time: 30ns
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
товару немає в наявності
 Мінімальне замовлення: 450 шт
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IXFA26N30X3 IXFA26N30X3 IXYS IXF_26N30X3.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
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DSA20C100PB DSA20C100PB IXYS DSA20C100PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
товару немає в наявності
 Мінімальне замовлення: 8000 шт
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IXFH90N20X3 IXFH90N20X3 IXYS IXF_90N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
1+790.89 грн
4+658.84 грн
10+586.67 грн
20+533.18 грн
30+500.92 грн
60+467.81 грн
В кошику  од. на суму  грн.
IXFA90N20X3 IXFA90N20X3 IXYS IXFA90N20X3.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+482.76 грн
3+402.43 грн
В кошику  од. на суму  грн.
IXFP90N20X3 IXFP90N20X3 IXYS IXF_90N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
1+633.63 грн
10+401.58 грн
25+367.62 грн
50+359.13 грн
В кошику  од. на суму  грн.
IXFQ90N20X3 IXFQ90N20X3 IXYS IXF_90N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+718.66 грн
3+600.25 грн
10+530.64 грн
В кошику  од. на суму  грн.
IXTA90N20X3 IXTA90N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFA90N20X3-TRL IXFA90N20X3-TRL IXYS littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFP90N20X3M IXFP90N20X3M IXYS IXFP90N20X3M.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
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IXTA90N20X3-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MDD175-28N1 IXYS MDD175-28N1.pdf LFPCN250210_Y1-screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
товару немає в наявності
 Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTT40N50L2-TRL IXYS littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: D3PAK; TO268
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate-source voltage: 20V
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
XCA170 XCA170 IXYS XCA170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 239 шт:
термін постачання 14-30 дні (днів)
2+305.38 грн
50+214.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
XCA170S XCA170S IXYS XCA170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
2+426.99 грн
50+259.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
XCA170STR IXYS XCA170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXDI630MCI IXDI630MCI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
1+702.20 грн
10+444.88 грн
50+416.87 грн
В кошику  од. на суму  грн.
IXDI630YI IXDI630YI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
1+623.57 грн
50+464.41 грн
В кошику  од. на суму  грн.
IXDI630MYI IXDI630MYI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
1+792.72 грн
10+501.77 грн
50+433.00 грн
В кошику  од. на суму  грн.
IXDI630CI IXDI630CI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
товару немає в наявності
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DPG30P300PJ DPG30P300PJ IXYS media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 145W
Technology: HiPerFRED™ 2nd Gen
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
1+770.78 грн
2+522.15 грн
6+493.28 грн
В кошику  од. на суму  грн.
DPG80C300HB DPG80C300HB IXYS media?resourcetype=datasheets&itemid=C1424EE0-3CE3-4366-A57E-6C29BF43F77E&filename=Littelfuse-Power-Semiconductors-DPG80C300HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W
Mounting: THT
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.36V
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 40A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
1+518.42 грн
3+390.55 грн
7+369.32 грн
В кошику  од. на суму  грн.
DPG60IM400QB DPG60IM400QB IXYS Littelfuse-Power-Semiconductors-DPG60IM400QB-Datasheet?assetguid=9CDFE8CC-C0D4-4751-A0DF-C56666566D3F Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO3P
Kind of package: tube
Max. forward voltage: 1.47V
Reverse recovery time: 45ns
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
2+380.36 грн
3+317.53 грн
10+281.02 грн
30+257.25 грн
Мінімальне замовлення: 2 шт
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MCC95-18io1B IXYS MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
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IXTR20P50P IXTR20P50P IXYS IXTR20P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: PolarP™
Drain current: -13A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.49Ω
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+647.34 грн
3+534.88 грн
10+481.39 грн
В кошику  од. на суму  грн.
IXDN75N120 IXDN75N120 IXYS IXDN75N120.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Power dissipation: 660W
Technology: NPT
Mechanical mounting: screw
товару немає в наявності
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IXYH75N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
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В кошику  од. на суму  грн.
IXFP22N65X2MW IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MDMA60B1200MB IXYS Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
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В кошику  од. на суму  грн.
IXFA5N100P-TRL IXFA5N100P-TRL IXYS littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP5N100PM IXFP5N100PM IXYS media?resourcetype=datasheets&itemid=0DDA82EB-56C2-4CAA-97EC-0E0A7CB22C0B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP5N100PM-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT15N100Q3-TRL IXYS littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 1.1Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Technology: HiPerFET™
Drain current: 15A
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTA05N100-TRL IXTA05N100-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA05N100HV-TRL IXTA05N100HV-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MXB12R600DPHFC IXYS power-semiconductor-multichip-discrete-mxb12r600dphfc-datasheet?assetguid=3aff4714-cbce-41f9-a485-d6be474d0f73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
товару немає в наявності
 Мінімальне замовлення: 250 шт
В кошику  од. на суму  грн.
CPC1563GSTR IXYS CPC1563.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1963GSTR IXYS CPC1963.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXTA50N20P-TRL IXTA50N20P-TRL IXYS littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTY90N055T2 IXTY90N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
товару немає в наявності
 Мінімальне замовлення: 350 шт
В кошику  од. на суму  грн.
IXTY90N055T2-TRL IXTY90N055T2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXTP96P085T IXTP96P085T IXYS IXT_96P085T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
2+378.53 грн
10+298.00 грн
25+269.14 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MUBW50-17T8 IXYS MUBW50-17T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
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MUBW30-06A7 IXYS MUBW30-06A7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW30-12A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
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MUBW25-12A7 IXYS MUBW25-12A7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW75-06A8 IXYS MUBW75-06A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
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MUBW75-12T8 IXYS MUBW75-12T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
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MUBW10-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
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MUBW10-06A7 IXYS MUBW10-06A7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW10-12A7 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW100-06A8 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
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PM1206S PM1206.pdf
PM1206S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
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PM1206STR PM1206.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXGH10N170 IXGH(t)10N170.pdf
IXGH10N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 110W
Case: TO247-3
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Pulsed collector current: 70A
Turn-on time: 0.3µs
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXFR20N120P IXFR20N120P.pdf
IXFR20N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 0.63Ω
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1520.52 грн
2+1335.50 грн
3+1334.65 грн
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IXFX20N120P IXF_20N120P.pdf
IXFX20N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Power dissipation: 780W
Case: PLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXFK20N120P IXF_20N120P.pdf
IXFK20N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Power dissipation: 780W
Case: TO264
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 570mΩ
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXSA20N120L2-7TR power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: D2PAK-7
Mounting: SMD
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXSH20N120L2KHV ixsh20n120l2khv-datasheet?assetguid=9393cb5f-7bae-401e-ad69-960584edc726
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: TO247-4
Mounting: THT
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Reverse recovery time: 30ns
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
IXFA26N30X3 IXF_26N30X3.pdf 300VProductBrief.pdf
IXFA26N30X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DSA20C100PB DSA20C100PB.pdf
DSA20C100PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
IXFH90N20X3 IXF_90N20X3.pdf 200VProductBrief.pdf
IXFH90N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+790.89 грн
4+658.84 грн
10+586.67 грн
20+533.18 грн
30+500.92 грн
60+467.81 грн
В кошику  од. на суму  грн.
IXFA90N20X3 IXFA90N20X3.pdf 200VProductBrief.pdf
IXFA90N20X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+482.76 грн
3+402.43 грн
В кошику  од. на суму  грн.
IXFP90N20X3 IXF_90N20X3.pdf 200VProductBrief.pdf
IXFP90N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+633.63 грн
10+401.58 грн
25+367.62 грн
50+359.13 грн
В кошику  од. на суму  грн.
IXFQ90N20X3 IXF_90N20X3.pdf 200VProductBrief.pdf
IXFQ90N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+718.66 грн
3+600.25 грн
10+530.64 грн
В кошику  од. на суму  грн.
IXTA90N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210
IXTA90N20X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFA90N20X3-TRL littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1
IXFA90N20X3-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP90N20X3M IXFP90N20X3M.pdf 200VProductBrief.pdf
IXFP90N20X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
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В кошику  од. на суму  грн.
IXTA90N20X3-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MDD175-28N1 MDD175-28N1.pdf LFPCN250210_Y1-screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTT40N50L2-TRL littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: D3PAK; TO268
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate-source voltage: 20V
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
XCA170 XCA170.pdf
XCA170
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 239 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+305.38 грн
50+214.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
XCA170S XCA170.pdf
XCA170S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+426.99 грн
50+259.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
XCA170STR XCA170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXDI630MCI IXD_630.pdf
IXDI630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+702.20 грн
10+444.88 грн
50+416.87 грн
В кошику  од. на суму  грн.
IXDI630YI IXD_630.pdf
IXDI630YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+623.57 грн
50+464.41 грн
В кошику  од. на суму  грн.
IXDI630MYI IXD_630.pdf
IXDI630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+792.72 грн
10+501.77 грн
50+433.00 грн
В кошику  од. на суму  грн.
IXDI630CI IXD_630.pdf
IXDI630CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
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DPG30P300PJ media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet
DPG30P300PJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 145W
Technology: HiPerFRED™ 2nd Gen
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+770.78 грн
2+522.15 грн
6+493.28 грн
В кошику  од. на суму  грн.
DPG80C300HB media?resourcetype=datasheets&itemid=C1424EE0-3CE3-4366-A57E-6C29BF43F77E&filename=Littelfuse-Power-Semiconductors-DPG80C300HB-Datasheet
DPG80C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W
Mounting: THT
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.36V
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 40A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+518.42 грн
3+390.55 грн
7+369.32 грн
В кошику  од. на суму  грн.
DPG60IM400QB Littelfuse-Power-Semiconductors-DPG60IM400QB-Datasheet?assetguid=9CDFE8CC-C0D4-4751-A0DF-C56666566D3F
DPG60IM400QB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO3P
Kind of package: tube
Max. forward voltage: 1.47V
Reverse recovery time: 45ns
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+380.36 грн
3+317.53 грн
10+281.02 грн
30+257.25 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MCC95-18io1B MCC95-18IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
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IXTR20P50P IXTR20P50P.pdf
IXTR20P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: PolarP™
Drain current: -13A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.49Ω
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+647.34 грн
3+534.88 грн
10+481.39 грн
В кошику  од. на суму  грн.
IXDN75N120 IXDN75N120.pdf
IXDN75N120
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Power dissipation: 660W
Technology: NPT
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXYH75N120B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
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IXFP22N65X2MW
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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Мінімальне замовлення: 300 шт
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MDMA60B1200MB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
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IXFA5N100P-TRL littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811
IXFA5N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
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Мінімальне замовлення: 800 шт
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IXFP5N100PM media?resourcetype=datasheets&itemid=0DDA82EB-56C2-4CAA-97EC-0E0A7CB22C0B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP5N100PM-Datasheet.PDF
IXFP5N100PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
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Мінімальне замовлення: 300 шт
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IXFT15N100Q3-TRL littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 1.1Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Technology: HiPerFET™
Drain current: 15A
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Мінімальне замовлення: 400 шт
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IXTA05N100-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
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Мінімальне замовлення: 800 шт
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IXTA05N100HV-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100HV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
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Мінімальне замовлення: 800 шт
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MXB12R600DPHFC power-semiconductor-multichip-discrete-mxb12r600dphfc-datasheet?assetguid=3aff4714-cbce-41f9-a485-d6be474d0f73
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
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Мінімальне замовлення: 250 шт
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CPC1563GSTR CPC1563.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
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Мінімальне замовлення: 1000 шт
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CPC1963GSTR CPC1963.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
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Мінімальне замовлення: 1000 шт
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IXTA50N20P-TRL littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220
IXTA50N20P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
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Мінімальне замовлення: 800 шт
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IXTY90N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6
IXTY90N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
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Мінімальне замовлення: 350 шт
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IXTY90N055T2-TRL
IXTY90N055T2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
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Мінімальне замовлення: 2500 шт
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IXTP96P085T IXT_96P085T.pdf
IXTP96P085T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+378.53 грн
10+298.00 грн
25+269.14 грн
Мінімальне замовлення: 2 шт
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MUBW50-17T8 MUBW50-17T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
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MUBW30-06A7 MUBW30-06A7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW30-12A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
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MUBW25-12A7 MUBW25-12A7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW75-06A8 MUBW75-06A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
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MUBW75-12T8 MUBW75-12T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
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MUBW10-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
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MUBW10-06A7 MUBW10-06A7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW10-12A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW100-06A8
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
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