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MDMA60B1200MB IXYS Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
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IXFA5N100P-TRL IXFA5N100P-TRL IXYS littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFP5N100PM IXFP5N100PM IXYS DS100537IXFP5N100PM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFT15N100Q3-TRL IXYS littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IXTA05N100-TRL IXTA05N100-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTA05N100HV-TRL IXTA05N100HV-TRL IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
 Мінімальне замовлення: 800 шт
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MXB12R600DPHFC IXYS power-semiconductor-multichip-discrete-mxb12r600dphfc-datasheet?assetguid=3aff4714-cbce-41f9-a485-d6be474d0f73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
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 Мінімальне замовлення: 250 шт
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CPC1563GSTR IXYS CPC1563.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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CPC1963GSTR IXYS CPC1963.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
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 Мінімальне замовлення: 1000 шт
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IXTA50N20P-TRL IXTA50N20P-TRL IXYS littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTY90N055T2 IXTY90N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
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IXTY90N055T2-TRL IXTY90N055T2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
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 Мінімальне замовлення: 2500 шт
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IXTP96P085T IXTP96P085T IXYS IXT_96P085T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
2+366.32 грн
10+288.39 грн
25+260.46 грн
Мінімальне замовлення: 2 шт
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MUBW50-17T8 IXYS MUBW50-17T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
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MUBW30-06A7 IXYS MUBW30-06A7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW30-12A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
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MUBW25-12A7 IXYS MUBW25-12A7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW75-06A8 IXYS MUBW75-06A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
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MUBW75-12T8 IXYS MUBW75-12T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
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MUBW10-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
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MUBW10-06A7 IXYS MUBW10-06A7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW10-12A7 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW100-06A8 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
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MUBW15-12T7 IXYS MUBW15-12T7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
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MUBW20-06A6K IXYS MUBW20-06A6K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW35-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW35-12A8 IXYS MUBW35-12A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW50-06A8 IXYS MUBW50-06A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
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MUBW50-12T8 IXYS MUBW50-12T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
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MUBW75-17T8 IXYS MUBW75-17T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
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IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhancement
Gate charge: 525nC
Reverse recovery time: 130ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
1+1837.79 грн
2+1613.68 грн
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LF21844NTR LF21844NTR IXYS LF21844NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
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 Мінімальне замовлення: 2500 шт
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IXTA44P15T IXTA44P15T IXYS IXT_44P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
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FUO22-16N FUO22-16N IXYS FUO22-16N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
1+1231.69 грн
5+1054.97 грн
В кошику  од. на суму  грн.
FUO22-12N FUO22-12N IXYS FUO22-12N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.2V
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 30A
Case: ISOPLUS i4-pac™ x024a
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
1+1150.28 грн
3+1009.78 грн
25+972.81 грн
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CPC1972GS CPC1972GS IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
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CPC1972GSTR IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXTA300N04T2-7 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTK100N25P IXTK100N25P IXYS IXTK100N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
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IXFA7N80P-TRL IXFA7N80P-TRL IXYS littelfuse-discrete-mosfets-ixf-7n80p-datasheet?assetguid=b00d4e8d-827b-4a04-b106-292ed53206ee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFP7N80PM IXFP7N80PM IXYS media?resourcetype=datasheets&itemid=37EF9B66-C3C4-4E98-858B-59EA1F7ACA5F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP7N80PM-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXKR47N60C5 IXKR47N60C5 IXYS IXKR47N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+1819.21 грн
3+1531.52 грн
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MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
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CPC5602CTR CPC5602CTR IXYS CPC5602.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
3+159.27 грн
10+88.74 грн
100+62.44 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDI609CI IXDI609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 755 шт:
термін постачання 14-30 дні (днів)
2+235.37 грн
10+164.33 грн
50+159.40 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDI609YI IXDI609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609PI IXDI609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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XBB170 XBB170 IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+679.55 грн
10+550.49 грн
250+463.40 грн
В кошику  од. на суму  грн.
XBB170P XBB170P IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
1+976.85 грн
50+594.04 грн
В кошику  од. на суму  грн.
XBB170S XBB170S IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
1+976.85 грн
50+594.04 грн
В кошику  од. на суму  грн.
XBB170PTR IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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XBB170STR IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXSG110N65L2K IXYS ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IXFK360N15T2 IXFK360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXFH160N15T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Application: automotive industry
Reverse recovery time: 90ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFN360N15T2 IXFN360N15T2 IXYS IXFN360N15T2.pdf Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 715nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Pulsed drain current: 900A
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFX360N15T2 IXFX360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXTH160N15T IXYS littelfuse-discrete-mosfets-ixth160n15t-datasheet?assetguid=2e1c68df-3eb8-4840-9ed0-17898eef579d Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Application: automotive industry
Reverse recovery time: 115ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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MDMA60B1200MB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
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IXFA5N100P-TRL littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811
IXFA5N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXFP5N100PM DS100537IXFP5N100PM.pdf
IXFP5N100PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFT15N100Q3-TRL littelfuse-discrete-mosfets-ixf-15n100q3-datasheet?assetguid=2eb816c3-afba-4569-a822-bf202a29101a
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
Мінімальне замовлення: 400 шт
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IXTA05N100-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTA05N100HV-TRL littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100HV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MXB12R600DPHFC power-semiconductor-multichip-discrete-mxb12r600dphfc-datasheet?assetguid=3aff4714-cbce-41f9-a485-d6be474d0f73
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
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Мінімальне замовлення: 250 шт
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CPC1563GSTR CPC1563.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
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CPC1963GSTR CPC1963.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IXTA50N20P-TRL littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220
IXTA50N20P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTY90N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6
IXTY90N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
товару немає в наявності
Мінімальне замовлення: 350 шт
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IXTY90N055T2-TRL
IXTY90N055T2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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IXTP96P085T IXT_96P085T.pdf
IXTP96P085T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+366.32 грн
10+288.39 грн
25+260.46 грн
Мінімальне замовлення: 2 шт
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MUBW50-17T8 MUBW50-17T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
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MUBW30-06A7 MUBW30-06A7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW30-12A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
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MUBW25-12A7 MUBW25-12A7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW75-06A8 MUBW75-06A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
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MUBW75-12T8 MUBW75-12T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
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MUBW10-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
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MUBW10-06A7 MUBW10-06A7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW10-12A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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MUBW100-06A8
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
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MUBW15-06A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
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MUBW15-12T7 MUBW15-12T7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
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MUBW20-06A6K MUBW20-06A6K.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW35-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW35-12A8 MUBW35-12A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW50-06A8 MUBW50-06A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
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MUBW50-12T8 MUBW50-12T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
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MUBW75-17T8 MUBW75-17T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
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IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhancement
Gate charge: 525nC
Reverse recovery time: 130ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1837.79 грн
2+1613.68 грн
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LF21844NTR LF21844NTR.pdf
LF21844NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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IXTA44P15T IXT_44P15T.pdf
IXTA44P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
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FUO22-16N FUO22-16N.pdf
FUO22-16N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1231.69 грн
5+1054.97 грн
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FUO22-12N FUO22-12N.pdf
FUO22-12N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.2V
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 30A
Case: ISOPLUS i4-pac™ x024a
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1150.28 грн
3+1009.78 грн
25+972.81 грн
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CPC1972GS CPC1972.pdf
CPC1972GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
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CPC1972GSTR CPC1972.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
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Мінімальне замовлення: 1000 шт
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IXTA300N04T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTK100N25P IXTK100N25P-DTE.pdf
IXTK100N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
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IXFA7N80P-TRL littelfuse-discrete-mosfets-ixf-7n80p-datasheet?assetguid=b00d4e8d-827b-4a04-b106-292ed53206ee
IXFA7N80P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP7N80PM media?resourcetype=datasheets&itemid=37EF9B66-C3C4-4E98-858B-59EA1F7ACA5F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP7N80PM-Datasheet.PDF
IXFP7N80PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXKR47N60C5 IXKR47N60C5.pdf
IXKR47N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1819.21 грн
3+1531.52 грн
В кошику  од. на суму  грн.
MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
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CPC5602CTR CPC5602.pdf
CPC5602CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+159.27 грн
10+88.74 грн
100+62.44 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDI609CI IXDD609CI.pdf
IXDI609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 755 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+235.37 грн
10+164.33 грн
50+159.40 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDI609YI IXDD609CI.pdf
IXDI609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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В кошику  од. на суму  грн.
IXDI609PI IXDD609CI.pdf
IXDI609PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
XBB170 XBB170.pdf
XBB170
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+679.55 грн
10+550.49 грн
250+463.40 грн
В кошику  од. на суму  грн.
XBB170P XBB170.pdf
XBB170P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+976.85 грн
50+594.04 грн
В кошику  од. на суму  грн.
XBB170S XBB170.pdf
XBB170S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+976.85 грн
50+594.04 грн
В кошику  од. на суму  грн.
XBB170PTR XBB170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
XBB170STR XBB170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXSG110N65L2K ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXFK360N15T2 IXFK(X)360N15T2.pdf
IXFK360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXFH160N15T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Application: automotive industry
Reverse recovery time: 90ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN360N15T2 IXFN360N15T2.pdf
IXFN360N15T2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 715nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Pulsed drain current: 900A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFX360N15T2 IXFK(X)360N15T2.pdf
IXFX360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXTH160N15T littelfuse-discrete-mosfets-ixth160n15t-datasheet?assetguid=2e1c68df-3eb8-4840-9ed0-17898eef579d
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Application: automotive industry
Reverse recovery time: 115ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.