| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTA05N100HV-TRL | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK; TO263AB On-state resistance: 17Ω Reverse recovery time: 710ns Power dissipation: 40W Gate charge: 7.8nC Drain current: 0.75A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||
| MXB12R600DPHFC | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns Type of transistor: N-MOSFET Technology: X2-Class Polarisation: N Drain-source voltage: 600V Drain current: 18A Power dissipation: 130W Case: i4-pac On-state resistance: 0.16Ω Mounting: THT Gate charge: 37nC Kind of channel: enhancement Reverse recovery time: 145ns |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||
| CPC1563GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC On-state resistance: 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2ms Switched voltage: max. 600V AC; max. 600V DC Case: DIP6 Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
| CPC1963GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase Type of relay: solid state Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 50mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
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IXTA50N20P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns Type of transistor: N-MOSFET Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: D2PAK; TO263 Gate-source voltage: 20V Mounting: SMD Gate charge: 70nC Kind of channel: enhancement Reverse recovery time: 150ns |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||
 |
IXTY90N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns On-state resistance: 8.4mΩ Reverse recovery time: 37ns Mounting: SMD Power dissipation: 150W Gate charge: 42nC Polarisation: N Drain current: 90A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK; TO252AA |
товару немає в наявності |
Мінімальне замовлення: 350 шт В кошику од. на суму грн. | ||||||||
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IXTY90N055T2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns Reverse recovery time: 37ns Mounting: SMD Power dissipation: 150W Gate charge: 42nC Drain current: 90A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK; TO252AA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||
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IXTP96P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 55ns |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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| MUBW50-17T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 53A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 290W Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW30-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 180W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW30-12A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 21A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW15-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 14A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 75W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW25-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Power dissipation: 225W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW75-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 65A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 320W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW75-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 355W Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW10-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 8A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 18A Power dissipation: 50W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW10-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 15A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 85W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW10-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 35A Power dissipation: 180W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW100-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 85A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 410W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW15-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 18A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 100W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW15-12T7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 140W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW20-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 17A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 85W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW35-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 29A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 130W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW35-12A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Power dissipation: 225W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW50-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 250W Mechanical mounting: screw Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW50-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 270W Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MUBW75-17T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 34A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 450W Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXFN360N10T | IXYS |
Category: Transistor modules Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 360A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 2.6mΩ Pulsed drain current: 900A Power dissipation: 830W Technology: GigaMOS™; HiPerFET™ Gate-source voltage: ±30V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 130ns Gate charge: 525nC |
на замовлення 244 шт: термін постачання 14-30 дні (днів) |
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LF21844NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||
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IXTA44P15T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263 Mounting: SMD Power dissipation: 298W Gate charge: 175nC Polarisation: unipolar Technology: TrenchP™ Drain current: -44A Kind of channel: enhancement Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO263 On-state resistance: 65mΩ Reverse recovery time: 140ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
FUO22-16N | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a |
на замовлення 108 шт: термін постачання 14-30 дні (днів) |
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FUO22-12N | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Case: ISOPLUS i4-pac™ x024a Max. forward voltage: 1.2V |
на замовлення 194 шт: термін постачання 14-30 дні (днів) |
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CPC1972GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Operating temperature: -40...85°C Control current max.: 50mA Type of relay: solid state Mounting: SMT Relay variant: 1-phase Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 800V AC Case: DIP6 Max. operating current: 250mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| CPC1972GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Operating temperature: -40...85°C Control current max.: 50mA Type of relay: solid state Mounting: SMT Relay variant: 1-phase Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 800V AC Case: DIP6 Max. operating current: 250mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
| IXTA300N04T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 40V Drain current: 300A Power dissipation: 480W Case: TO263-7 Gate-source voltage: 20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 145nC Kind of channel: enhancement Reverse recovery time: 53ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
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IXTK100N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264 Type of transistor: N-MOSFET Drain-source voltage: 250V Drain current: 100A Power dissipation: 600W Case: TO264 Gate-source voltage: ±20V Mounting: THT Gate charge: 185nC Kind of channel: enhancement Polarisation: unipolar Technology: PolarHT™ Kind of package: tube On-state resistance: 27mΩ Reverse recovery time: 200ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFA7N80P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 1.44Ω Mounting: SMD Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 32nC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||
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IXFP7N80PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 800V Drain current: 3.5A Power dissipation: 50W Case: TO220-3 Gate-source voltage: 30V On-state resistance: 1.44Ω Mounting: THT Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 32nC |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||
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IXKR47N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 278W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Features of semiconductor devices: super junction coolmos |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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MCO150-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw Gate current: 150/200mA Max. forward voltage: 1.89V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 158A Kind of package: bulk Semiconductor structure: single thyristor Case: SOT227B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC5602CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion |
на замовлення 107 шт: термін постачання 14-30 дні (днів) |
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IXDI609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 755 шт: термін постачання 14-30 дні (днів) |
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IXDI609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXDI609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||
 |
XBB170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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XBB170P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 248 шт: термін постачання 14-30 дні (днів) |
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 |
XBB170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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| XBB170PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
| XBB170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
| IXSG110N65L2K | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 650V Drain current: 111A Power dissipation: 600W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 25Ω Mounting: SMD Kind of channel: enhancement Gate charge: 125nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||
|
|
IXFK360N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Power dissipation: 1.67kW Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 360A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube On-state resistance: 4mΩ Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXFH160N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns Case: TO247-3 Mounting: THT Power dissipation: 830W Gate charge: 160nC Polarisation: N Drain current: 160A Kind of channel: enhancement Drain-source voltage: 150V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 30V On-state resistance: 9.6mΩ Reverse recovery time: 90ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
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IXFN360N15T2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A Case: SOT227B Pulsed drain current: 900A Type of semiconductor module: MOSFET transistor Power dissipation: 1.07kW Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 310A Kind of channel: enhancement Drain-source voltage: 150V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±30V Semiconductor structure: single transistor On-state resistance: 4mΩ Reverse recovery time: 150ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||
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IXFX360N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns Case: PLUS247™ Mounting: THT Power dissipation: 1.67kW Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 360A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube On-state resistance: 4mΩ Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXTH160N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns Case: TO247-3 Mounting: THT Power dissipation: 830W Gate charge: 160nC Drain current: 160A Kind of channel: enhancement Drain-source voltage: 150V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 30V On-state resistance: 9.6mΩ Reverse recovery time: 115ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
| MMIX1H60N150V1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; SMPD; SMD; 32kA Type of thyristor: thyristor Max. off-state voltage: 1.5kV Case: SMPD Mounting: SMD Max. forward impulse current: 32kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Pulsed drain current: 900A Power dissipation: 680W Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 235A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.4mΩ Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IXGT32N120A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV Case: TO268HV Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 89nC Pulsed collector current: 230A Type of transistor: IGBT Collector current: 32A |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||
 |
IXGH32N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 89nC Technology: GenX3™; PT Pulsed collector current: 230A Type of transistor: IGBT Turn-on time: 239ns Turn-off time: 1.38µs Gate-emitter voltage: ±20V Collector current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXGT32N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 89nC Technology: GenX3™; PT Pulsed collector current: 230A Type of transistor: IGBT Turn-on time: 239ns Turn-off time: 1.38s Gate-emitter voltage: ±20V Collector current: 32A |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA05N100HV-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MXB12R600DPHFC |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| CPC1563GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CPC1963GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IXTA50N20P-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXTY90N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
товару немає в наявності
Мінімальне замовлення: 350 шт
В кошику
од. на суму грн.
| IXTY90N055T2-TRL |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IXTP96P085T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 377.41 грн |
| 10+ | 297.13 грн |
| 25+ | 268.34 грн |
| MUBW50-17T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MUBW30-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
товару немає в наявності
В кошику
од. на суму грн.
| MUBW30-12A6K |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
товару немає в наявності
В кошику
од. на суму грн.
| MUBW15-06A6K |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
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| MUBW25-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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| MUBW75-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
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| MUBW75-12T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
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| MUBW10-06A6K |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
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| MUBW10-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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| MUBW10-12A7 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
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| MUBW100-06A8 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
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| MUBW15-06A7 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
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| MUBW15-12T7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
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| MUBW20-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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| MUBW35-06A6K |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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| MUBW35-12A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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| MUBW50-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
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| MUBW50-12T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
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| MUBW75-17T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
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| IXFN360N10T |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 130ns
Gate charge: 525nC
Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 130ns
Gate charge: 525nC
на замовлення 244 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1781.32 грн |
| 5+ | 1598.21 грн |
| LF21844NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
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Мінімальне замовлення: 2500 шт
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| IXTA44P15T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Mounting: SMD
Power dissipation: 298W
Gate charge: 175nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -44A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
On-state resistance: 65mΩ
Reverse recovery time: 140ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Mounting: SMD
Power dissipation: 298W
Gate charge: 175nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -44A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
On-state resistance: 65mΩ
Reverse recovery time: 140ns
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| FUO22-16N |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1268.99 грн |
| 5+ | 1086.92 грн |
| FUO22-12N |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Max. forward voltage: 1.2V
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Max. forward voltage: 1.2V
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1538.83 грн |
| 5+ | 1261.30 грн |
| 10+ | 1126.71 грн |
| 25+ | 1002.27 грн |
| CPC1972GS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
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| CPC1972GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IXTA300N04T2-7 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
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Мінімальне замовлення: 300 шт
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| IXTK100N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
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| IXFA7N80P-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
Мінімальне замовлення: 800 шт
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| IXFP7N80PM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
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Мінімальне замовлення: 300 шт
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| IXKR47N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1874.31 грн |
| 3+ | 1577.90 грн |
| MCO150-12IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
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| CPC5602CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.09 грн |
| 10+ | 91.42 грн |
| 100+ | 64.33 грн |
| IXDI609CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 755 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.49 грн |
| 10+ | 169.30 грн |
| 50+ | 164.22 грн |
| IXDI609YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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| IXDI609PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| XBB170 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 700.13 грн |
| 10+ | 567.16 грн |
| 250+ | 477.43 грн |
| XBB170P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1006.44 грн |
| 50+ | 612.03 грн |
| XBB170S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1006.44 грн |
| 50+ | 612.03 грн |
| XBB170PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| XBB170STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IXSG110N65L2K |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXFK360N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
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од. на суму грн.
| IXFH160N15T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Polarisation: N
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Polarisation: N
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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од. на суму грн.
| IXFN360N15T2 |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Pulsed drain current: 900A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.07kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 150V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Pulsed drain current: 900A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.07kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 150V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 4mΩ
Reverse recovery time: 150ns
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Мінімальне замовлення: 300 шт
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| IXFX360N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
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| IXTH160N15T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 115ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 115ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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| MMIX1H60N150V1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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| MMIX1F360N15T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 680W
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 235A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 680W
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 235A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Reverse recovery time: 150ns
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| IXGT32N120A3-TRL |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
товару немає в наявності
Мінімальне замовлення: 400 шт
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| IXGH32N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38µs
Gate-emitter voltage: ±20V
Collector current: 32A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38µs
Gate-emitter voltage: ±20V
Collector current: 32A
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| IXGT32N120A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38s
Gate-emitter voltage: ±20V
Collector current: 32A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38s
Gate-emitter voltage: ±20V
Collector current: 32A
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