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IXDD614YI IXDD614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
1+429.36 грн
10+265.53 грн
50+226.46 грн
В кошику  од. на суму  грн.
IXDI630MYI IXDI630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
1+744.51 грн
10+471.25 грн
50+406.67 грн
В кошику  од. на суму  грн.
IXGK100N170 IXGK100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 425nC
Turn-on time: 285ns
Turn-off time: 720ns
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
товару немає в наявності
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DSDI60-18A DSDI60-18A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
1+808.06 грн
2+628.34 грн
5+594.05 грн
10+586.87 грн
30+570.93 грн
В кошику  од. на суму  грн.
IXTH270N04T4 IXTH270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Case: TO247-3
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+429.36 грн
В кошику  од. на суму  грн.
IXTP270N04T4 IXTP270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Case: TO220AB
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
2+241.30 грн
3+201.74 грн
10+178.61 грн
50+165.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA80E1200HF CLA80E1200HF IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
1+588.22 грн
5+471.25 грн
10+435.37 грн
В кошику  од. на суму  грн.
VBO21-12NO7 VBO21-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+920.55 грн
3+759.11 грн
10+682.56 грн
В кошику  од. на суму  грн.
IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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MDI550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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MID550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
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IXYX50N170C IXYX50N170C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
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IXYN100N65A3 IXYN100N65A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
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IXYN100N120C3 IXYN100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
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В кошику  од. на суму  грн.
IXBOD1-36R IXBOD1-36R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+8810.48 грн
3+7176.45 грн
10+6473.16 грн
20+6235.54 грн
В кошику  од. на суму  грн.
IXBOD1-38R IXBOD1-38R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+8733.19 грн
3+7176.45 грн
10+6458.81 грн
В кошику  од. на суму  грн.
IXGH50N90B2 IXGH50N90B2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488 Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: HiPerFAST™; XPT™
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
1+549.58 грн
3+401.08 грн
7+378.76 грн
30+365.20 грн
В кошику  од. на суму  грн.
IXGH50N90B2D1 IXGH50N90B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: GenX3™; HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
1+955.76 грн
2+539.83 грн
5+510.33 грн
В кошику  од. на суму  грн.
IXGH48N60A3 IXGH48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
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IXGH120N30B3 IXGH120N30B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Kind of package: tube
Gate charge: 225nC
Turn-on time: 51ns
Turn-off time: 356ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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IXGH120N30C3 IXGH120N30C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Kind of package: tube
Gate charge: 230nC
Turn-on time: 66ns
Turn-off time: 233ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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IXGH28N60B3D1 IXGH28N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0D5F6D5F1820&compId=IXGH28N60B3D1.pdf?ci_sign=6f6b95dccb0524e7c091ba3fc038cb10729717c2 Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 415ns
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXTP18P10T IXTP18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
2+218.12 грн
10+128.38 грн
25+114.03 грн
50+105.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA70I1200NA IXA70I1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+2681.79 грн
3+2239.05 грн
В кошику  од. на суму  грн.
IXTP230N075T2 IXTP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
2+406.18 грн
10+294.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK100N65X2 IXFK100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+1165.28 грн
В кошику  од. на суму  грн.
CPC3982TTR CPC3982TTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: depletion
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.15A
Power dissipation: 0.4W
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
на замовлення 2851 шт:
термін постачання 21-30 дні (днів)
11+42.08 грн
12+33.81 грн
49+19.30 грн
135+18.18 грн
1000+17.54 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3720CTR CPC3720CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
на замовлення 381 шт:
термін постачання 21-30 дні (днів)
11+42.08 грн
19+22.01 грн
25+20.09 грн
100+17.70 грн
250+16.27 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3730CTR CPC3730CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Kind of channel: depletion
Case: SOT89
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.14A
Power dissipation: 1.4W
Gate-source voltage: ±15V
On-state resistance: 35Ω
Drain-source voltage: 350V
Kind of package: reel; tape
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IXTP3N100D2 IXTP3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
2+285.95 грн
10+193.76 грн
25+182.60 грн
50+174.63 грн
100+166.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA60N10T IXTA60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXFR200N10P IXFR200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFT170N25X3HV IXFT170N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
товару немає в наявності
В кошику  од. на суму  грн.
LBA716STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
IXTH06N220P3HV IXTH06N220P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
товару немає в наявності
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXFT100N30X3HV IXFT100N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXBT2N250 IXBT2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-off time: 252ns
Turn-on time: 310ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1414.31 грн
В кошику  од. на суму  грн.
IXTP3N120 IXTP3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
1+513.52 грн
5+435.37 грн
10+414.64 грн
50+370.78 грн
В кошику  од. на суму  грн.
IXFK180N25T IXFK180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 364nC
On-state resistance: 12.9mΩ
Drain current: 180A
Power dissipation: 1390W
Drain-source voltage: 250V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1081.99 грн
В кошику  од. на суму  грн.
IXFT30N85XHV IXFT30N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2992D6C47820&compId=IXFH30N85X_IXFT30N85XHV.pdf?ci_sign=390b5581f76a713c23254cf56e292a2a68f13ab2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.23Ω
Drain current: 30A
Power dissipation: 695W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 68nC
Reverse recovery time: 160ns
товару немає в наявності
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DSI30-12AS-TUB DSI30-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 255A
Semiconductor structure: single diode
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
2+223.27 грн
10+151.50 грн
50+119.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1219Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Ucntrl: 5÷12VDC; 200mA; max.60VAC
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
On-state resistance: 16Ω
Control voltage: 5...12V DC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Manufacturer series: OptoMOS
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IXTP130N15X4 IXTP130N15X4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2892EBE01F77820&compId=IXTH(P)130N15X4.pdf?ci_sign=7bebcf155b0b8631aec3241bd97b7a01a507017d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 93ns
Features of semiconductor devices: ultra junction x-class
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+428.50 грн
3+358.03 грн
10+316.56 грн
50+283.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH130N15X3 IXFH130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+656.92 грн
В кошику  од. на суму  грн.
IXDD630CI IXDD630CI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
1+569.33 грн
10+436.17 грн
В кошику  од. на суму  грн.
IXBH12N300 IXBH12N300 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
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IXCP10M45S IXCP10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 507 шт:
термін постачання 21-30 дні (днів)
3+197.51 грн
10+143.53 грн
50+137.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXCY10M45S IXCY10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
3+196.65 грн
10+138.74 грн
25+122.00 грн
70+118.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VHFD29-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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LCA712 LCA712 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 350µs
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+429.36 грн
В кошику  од. на суму  грн.
LCA125 LCA125 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+252.46 грн
5+187.39 грн
10+183.40 грн
14+177.02 грн
100+170.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MD16200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
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MDMA210P1600YD IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83687231AA00C4&compId=MDMA210P1600YD.pdf?ci_sign=b427c411ce21d44949c533e9b3d1060607206045 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
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CPC1301GR CPC1301GR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Case: SO4
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
5+87.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXDD614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+429.36 грн
10+265.53 грн
50+226.46 грн
В кошику  од. на суму  грн.
IXDI630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+744.51 грн
10+471.25 грн
50+406.67 грн
В кошику  од. на суму  грн.
IXGK100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGK100N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 425nC
Turn-on time: 285ns
Turn-off time: 720ns
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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DSDI60-18A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433
DSDI60-18A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+808.06 грн
2+628.34 грн
5+594.05 грн
10+586.87 грн
30+570.93 грн
В кошику  од. на суму  грн.
IXTH270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTH270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Case: TO247-3
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+429.36 грн
В кошику  од. на суму  грн.
IXTP270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTP270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Case: TO220AB
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+241.30 грн
3+201.74 грн
10+178.61 грн
50+165.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA80E1200HF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf
CLA80E1200HF
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+588.22 грн
5+471.25 грн
10+435.37 грн
В кошику  од. на суму  грн.
VBO21-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208
VBO21-12NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+920.55 грн
3+759.11 грн
10+682.56 грн
В кошику  од. на суму  грн.
IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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MDI550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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MID550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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IXYX100N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953
IXYX100N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
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IXYX50N170C pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b
IXYX50N170C
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
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IXYN100N65A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b
IXYN100N65A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
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IXYN100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405
IXYN100N120C3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXBOD1-36R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-36R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+8810.48 грн
3+7176.45 грн
10+6473.16 грн
20+6235.54 грн
В кошику  од. на суму  грн.
IXBOD1-38R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-38R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+8733.19 грн
3+7176.45 грн
10+6458.81 грн
В кошику  од. на суму  грн.
IXGH50N90B2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488
IXGH50N90B2
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: HiPerFAST™; XPT™
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+549.58 грн
3+401.08 грн
7+378.76 грн
30+365.20 грн
В кошику  од. на суму  грн.
IXGH50N90B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf
IXGH50N90B2D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: GenX3™; HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+955.76 грн
2+539.83 грн
5+510.33 грн
В кошику  од. на суму  грн.
IXGH48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGH48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGH30N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3
IXGH30N120B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
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IXGH120N30B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27
IXGH120N30B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Kind of package: tube
Gate charge: 225nC
Turn-on time: 51ns
Turn-off time: 356ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXGH120N30C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f
IXGH120N30C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Kind of package: tube
Gate charge: 230nC
Turn-on time: 66ns
Turn-off time: 233ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXGH28N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0D5F6D5F1820&compId=IXGH28N60B3D1.pdf?ci_sign=6f6b95dccb0524e7c091ba3fc038cb10729717c2
IXGH28N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
товару немає в наявності
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IXGH30N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81
IXGH30N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 415ns
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IXGH48N60A3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380
IXGH48N60A3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTP18P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+218.12 грн
10+128.38 грн
25+114.03 грн
50+105.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA70I1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae
IXA70I1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2681.79 грн
3+2239.05 грн
В кошику  од. на суму  грн.
IXTP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988
IXTP230N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+406.18 грн
10+294.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFK100N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1165.28 грн
В кошику  од. на суму  грн.
CPC3982TTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3
CPC3982TTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: depletion
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.15A
Power dissipation: 0.4W
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
на замовлення 2851 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.08 грн
12+33.81 грн
49+19.30 грн
135+18.18 грн
1000+17.54 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3720CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94
CPC3720CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
на замовлення 381 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.08 грн
19+22.01 грн
25+20.09 грн
100+17.70 грн
250+16.27 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3730CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869
CPC3730CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Kind of channel: depletion
Case: SOT89
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.14A
Power dissipation: 1.4W
Gate-source voltage: ±15V
On-state resistance: 35Ω
Drain-source voltage: 350V
Kind of package: reel; tape
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В кошику  од. на суму  грн.
IXTP3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+285.95 грн
10+193.76 грн
25+182.60 грн
50+174.63 грн
100+166.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTA60N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXFR200N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c
IXFR200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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IXFT170N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef
IXFT170N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
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LBA716STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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IXTH06N220P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8
IXTH06N220P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
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IXTA380N036T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0
IXTA380N036T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXFT100N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT100N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXBT2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0
IXBT2N250
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-off time: 252ns
Turn-on time: 310ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1414.31 грн
В кошику  од. на суму  грн.
IXTP3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTP3N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+513.52 грн
5+435.37 грн
10+414.64 грн
50+370.78 грн
В кошику  од. на суму  грн.
IXFK180N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f
IXFK180N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 364nC
On-state resistance: 12.9mΩ
Drain current: 180A
Power dissipation: 1390W
Drain-source voltage: 250V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1081.99 грн
В кошику  од. на суму  грн.
IXFT30N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2992D6C47820&compId=IXFH30N85X_IXFT30N85XHV.pdf?ci_sign=390b5581f76a713c23254cf56e292a2a68f13ab2
IXFT30N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.23Ω
Drain current: 30A
Power dissipation: 695W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 68nC
Reverse recovery time: 160ns
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DSI30-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0
DSI30-12AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.25V
Load current: 30A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 255A
Semiconductor structure: single diode
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+223.27 грн
10+151.50 грн
50+119.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1219Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Ucntrl: 5÷12VDC; 200mA; max.60VAC
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
On-state resistance: 16Ω
Control voltage: 5...12V DC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Manufacturer series: OptoMOS
товару немає в наявності
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IXTP130N15X4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2892EBE01F77820&compId=IXTH(P)130N15X4.pdf?ci_sign=7bebcf155b0b8631aec3241bd97b7a01a507017d
IXTP130N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 93ns
Features of semiconductor devices: ultra junction x-class
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+428.50 грн
3+358.03 грн
10+316.56 грн
50+283.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFH130N15X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+656.92 грн
В кошику  од. на суму  грн.
IXDD630CI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+569.33 грн
10+436.17 грн
В кошику  од. на суму  грн.
IXBH12N300 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602
IXBH12N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
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IXCP10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCP10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 507 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+197.51 грн
10+143.53 грн
50+137.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXCY10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCY10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+196.65 грн
10+138.74 грн
25+122.00 грн
70+118.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VHFD29-16IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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LCA712 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430
LCA712
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 350µs
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+429.36 грн
В кошику  од. на суму  грн.
LCA125 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe
LCA125
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+252.46 грн
5+187.39 грн
10+183.40 грн
14+177.02 грн
100+170.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MD16200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
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MDMA210P1600YD pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83687231AA00C4&compId=MDMA210P1600YD.pdf?ci_sign=b427c411ce21d44949c533e9b3d1060607206045 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
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CPC1301GR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0
CPC1301GR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Case: SO4
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+87.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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