Продукція > IXYS > Всі товари виробника IXYS (16121) > Сторінка 265 з 269

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IXGH72N60A3 IXGH72N60A3 IXYS IXG_72N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
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IXGH48N60A3 IXGH48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP48N60A3 IXGP48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP36N60A3 IXGP36N60A3 IXYS IXGA(P,H)36N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
товару немає в наявності
 Мінімальне замовлення: 50 шт
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IXGA36N60A3-TRL IXGA36N60A3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXGT72N60A3-TRL IXYS littelfuse-discrete-igbts-ixg-72n60a3-datasheet?assetguid=6e16c9d0-fe75-42ee-bf54-c662531444c2 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IXGX72N60A3H1 IXGX72N60A3H1 IXYS IXGK(X)72N60A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
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IXYA20N65C3D1 IXYA20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Case: TO263
Mounting: SMD
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 30nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 105A
Type of transistor: IGBT
Turn-on time: 51ns
Kind of package: tube
Turn-off time: 132ns
Gate-emitter voltage: ±20V
Collector current: 20A
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
2+251.29 грн
3+209.52 грн
6+183.22 грн
15+173.36 грн
50+166.79 грн
Мінімальне замовлення: 2 шт
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IXTH20N65X IXTH20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
1+643.27 грн
3+438.75 грн
6+414.92 грн
В кошику  од. на суму  грн.
IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
2+420.29 грн
3+350.84 грн
4+266.21 грн
Мінімальне замовлення: 2 шт
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IXYP20N65C3 IXYP20N65C3 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYA20N65C3 IXYA20N65C3 IXYS IXYA(H)20N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
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IXTH20N65X2 IXTH20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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IXTP20N65X IXTP20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
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IXTA20N65X IXTA20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
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IXTP20N65X2 IXTP20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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IXYA20N65C3-TRL IXYA20N65C3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 230W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFN160N30T IXFN160N30T IXYS IXFN160N30T.pdf Category: Transistor modules
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXFX160N30T IXFX160N30T IXYS IXF_160N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXFK160N30T IXFK160N30T IXYS IXF_160N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
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IXFB300N10P IXFB300N10P IXYS IXFB300N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFT140N10P-TRL IXYS littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IXTT140N10P-TRL IXYS littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 120ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IXFP10N60P IXFP10N60P IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 120ns
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+442.42 грн
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXFA10N60P IXFA10N60P IXYS IXFA(P)10N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 120ns
Technology: HiPerFET™; Polar™
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IXFA10N60P-TRL IXFA10N60P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA10N60P IXTA10N60P IXYS media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Pulsed drain current: 275A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
 Мінімальне замовлення: 100 шт
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IXFB110N60P3 IXFB110N60P3 IXYS IXFB110N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTT75N10L2 IXTT75N10L2 IXYS IXT_75N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1068.88 грн
В кошику  од. на суму  грн.
IXTB62N50L IXTB62N50L IXYS IXTB62N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+3312.81 грн
3+2721.24 грн
10+2445.17 грн
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IXTK200N10L2 IXTK200N10L2 IXYS IXT_200N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
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IXTH80N20L IXTH80N20L IXYS IXTH(T)80N20L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Features of semiconductor devices: linear power mosfet
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IXTT80N20L IXTT80N20L IXYS IXTH(T)80N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
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IXTX240N075L2 IXTX240N075L2 IXYS IXTK(X)240N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTK240N075L2 IXTK240N075L2 IXYS IXTK(X)240N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTT140N075L2HV IXTT140N075L2HV IXYS IXTT140N075L2_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
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IXTA230N04T4 IXTA230N04T4 IXYS IXTA(P)230N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4 IXTP230N04T4 IXYS IXTA(P)230N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4M IXTP230N04T4M IXYS IXTP230N04T4M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP24P085T IXTP24P085T IXYS IXT_24P085T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
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IXTK20N150 IXTK20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
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LAA710 LAA710 IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
1+1506.87 грн
10+1329.40 грн
50+1114.95 грн
В кошику  од. на суму  грн.
LBA716S LBA716S IXYS lba716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+1029.06 грн
10+894.75 грн
В кошику  од. на суму  грн.
LBA716 LBA716 IXYS LBA716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
1+880.41 грн
10+771.51 грн
В кошику  од. на суму  грн.
MG1775S-BN4MM IXYS littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXBF20N300 IXBF20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 150W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 34A
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IXBF20N360 IXBF20N360 IXYS IXBF20N360.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Power dissipation: 230W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 220A
Gate-emitter voltage: ±20V
Collector current: 20A
товару немає в наявності
 Мінімальне замовлення: 300 шт
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CPC1590P IXYS CPC1590.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1590PTR IXYS CPC1590.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1593G CPC1593G IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1593GS CPC1593GS IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
CPC1593GSTR IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MDA72-16N1B MDA72-16N1B IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 113A x2
Kind of package: bulk
Semiconductor structure: common anode; double
Case: TO240AA
Max. forward impulse current: 1.54kA
Max. forward voltage: 1.6V
Type of semiconductor module: diode
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+2834.12 грн
3+2328.50 грн
10+2089.40 грн
В кошику  од. на суму  грн.
LCB110STR IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSEC30-06A DSEC30-06A IXYS DSEC30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 271 шт:
термін постачання 14-30 дні (днів)
1+468.08 грн
10+228.41 грн
30+219.38 грн
В кошику  од. на суму  грн.
DSEC30-06B DSEC30-06B IXYS Littelfuse-Power-Semiconductors-DSEC30-06B-Datasheet?assetguid=afd19e64-74f8-4ee9-aa71-195aeedffb06 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
2+300.84 грн
3+247.31 грн
10+221.84 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH12N70X2 IXTH12N70X2 IXYS IXTH12N70X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Gate charge: 19nC
Features of semiconductor devices: ultra junction x-class
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DSA70C200HB DSA70C200HB IXYS DSA70C200HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.79V
Max. forward impulse current: 0.55kA
Power dissipation: 215W
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGH72N60A3 IXG_72N60A3.pdf
IXGH72N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
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IXGH48N60A3 IXGA(P,H)48N60A3.pdf
IXGH48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP48N60A3 IXGA(P,H)48N60A3.pdf
IXGP48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP36N60A3 IXGA(P,H)36N60A3.pdf
IXGP36N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXGA36N60A3-TRL
IXGA36N60A3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGT72N60A3-TRL littelfuse-discrete-igbts-ixg-72n60a3-datasheet?assetguid=6e16c9d0-fe75-42ee-bf54-c662531444c2
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXGX72N60A3H1 IXGK(X)72N60A3H1.pdf
IXGX72N60A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
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IXYA20N65C3D1 IXY_20N65C3D1.pdf
IXYA20N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Case: TO263
Mounting: SMD
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 30nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 105A
Type of transistor: IGBT
Turn-on time: 51ns
Kind of package: tube
Turn-off time: 132ns
Gate-emitter voltage: ±20V
Collector current: 20A
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+251.29 грн
3+209.52 грн
6+183.22 грн
15+173.36 грн
50+166.79 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH20N65X IXTA(H,P)20N65X.pdf
IXTH20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+643.27 грн
3+438.75 грн
6+414.92 грн
В кошику  од. на суму  грн.
IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+420.29 грн
3+350.84 грн
4+266.21 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXYP20N65C3
IXYP20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYA20N65C3 IXYA(H)20N65C3.pdf
IXYA20N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
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В кошику  од. на суму  грн.
IXTH20N65X2 IXTA(H,P)20N65X2.pdf
IXTH20N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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В кошику  од. на суму  грн.
IXTP20N65X IXTA(H,P)20N65X.pdf
IXTP20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
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В кошику  од. на суму  грн.
IXTA20N65X IXTA(H,P)20N65X.pdf
IXTA20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
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IXTP20N65X2 IXTA(H,P)20N65X2.pdf
IXTP20N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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В кошику  од. на суму  грн.
IXYA20N65C3-TRL
IXYA20N65C3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 230W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFN160N30T IXFN160N30T.pdf
IXFN160N30T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXFX160N30T IXF_160N30T.pdf
IXFX160N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXFK160N30T IXF_160N30T.pdf
IXFK160N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
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В кошику  од. на суму  грн.
IXFB300N10P IXFB300N10P.pdf
IXFB300N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT140N10P-TRL littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTT140N10P-TRL littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 120ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXFP10N60P IXFA(P)10N60P.pdf
IXFP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 120ns
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+442.42 грн
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXFA10N60P IXFA(P)10N60P.pdf
IXFA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 120ns
Technology: HiPerFET™; Polar™
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В кошику  од. на суму  грн.
IXFA10N60P-TRL
IXFA10N60P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA10N60P media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF
IXTA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Pulsed drain current: 275A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
IXFB110N60P3 IXFB110N60P3.pdf
IXFB110N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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В кошику  од. на суму  грн.
IXTT75N10L2 IXT_75N10L2.pdf
IXTT75N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1068.88 грн
В кошику  од. на суму  грн.
IXTB62N50L IXTB62N50L.pdf
IXTB62N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3312.81 грн
3+2721.24 грн
10+2445.17 грн
В кошику  од. на суму  грн.
IXTK200N10L2 IXT_200N10L2.pdf
IXTK200N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
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IXTH80N20L IXTH(T)80N20L.pdf
IXTH80N20L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Features of semiconductor devices: linear power mosfet
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IXTT80N20L IXTH(T)80N20L.pdf
IXTT80N20L
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
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IXTX240N075L2 IXTK(X)240N075L2.pdf
IXTX240N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTK240N075L2 IXTK(X)240N075L2.pdf
IXTK240N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
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IXTT140N075L2HV IXTT140N075L2_HV.pdf
IXTT140N075L2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
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IXTA230N04T4 IXTA(P)230N04T4.pdf
IXTA230N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4 IXTA(P)230N04T4.pdf
IXTP230N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP230N04T4M IXTP230N04T4M.pdf
IXTP230N04T4M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP24P085T IXT_24P085T.pdf
IXTP24P085T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
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IXTK20N150 IXTK(X)20N150.pdf
IXTK20N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
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LAA710 LAA710.pdf
LAA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1506.87 грн
10+1329.40 грн
50+1114.95 грн
В кошику  од. на суму  грн.
LBA716S lba716.pdf
LBA716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1029.06 грн
10+894.75 грн
В кошику  од. на суму  грн.
LBA716 LBA716.pdf
LBA716
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+880.41 грн
10+771.51 грн
В кошику  од. на суму  грн.
MG1775S-BN4MM littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXBF20N300 littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf
IXBF20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 150W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 34A
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IXBF20N360 IXBF20N360.pdf
IXBF20N360
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Power dissipation: 230W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 220A
Gate-emitter voltage: ±20V
Collector current: 20A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC1590P CPC1590.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1590PTR CPC1590.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
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CPC1593G CPC1593.pdf
CPC1593G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1593GS CPC1593.pdf
CPC1593GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1593GSTR CPC1593.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MDA72-16N1B PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDA72-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 113A x2
Kind of package: bulk
Semiconductor structure: common anode; double
Case: TO240AA
Max. forward impulse current: 1.54kA
Max. forward voltage: 1.6V
Type of semiconductor module: diode
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2834.12 грн
3+2328.50 грн
10+2089.40 грн
В кошику  од. на суму  грн.
LCB110STR LCB110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSEC30-06A DSEC30-06A.pdf
DSEC30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 271 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+468.08 грн
10+228.41 грн
30+219.38 грн
В кошику  од. на суму  грн.
DSEC30-06B Littelfuse-Power-Semiconductors-DSEC30-06B-Datasheet?assetguid=afd19e64-74f8-4ee9-aa71-195aeedffb06
DSEC30-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+300.84 грн
3+247.31 грн
10+221.84 грн
Мінімальне замовлення: 2 шт
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IXTH12N70X2 IXTH12N70X2.pdf
IXTH12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Gate charge: 19nC
Features of semiconductor devices: ultra junction x-class
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DSA70C200HB DSA70C200HB.pdf
DSA70C200HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.79V
Max. forward impulse current: 0.55kA
Power dissipation: 215W
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.