| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| LDA102S | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 50-350%@1mA Collector-emitter voltage: 500mV Turn-on time: 7µs Turn-off time: 20µs Trigger current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXDF602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 93ns Turn-on time: 93ns |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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IXDD614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
на замовлення 1047 шт: термін постачання 21-30 дні (днів) |
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IXDI614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
на замовлення 513 шт: термін постачання 21-30 дні (днів) |
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IXDN609PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 655 шт: термін постачання 21-30 дні (днів) |
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IXDF604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 79ns Turn-on time: 81ns |
на замовлення 415 шт: термін постачання 21-30 дні (днів) |
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IXDI602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 93ns Turn-on time: 93ns |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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IXDD614SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 264 шт: термін постачання 21-30 дні (днів) |
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IXDI602SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 93ns Turn-on time: 93ns |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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FUO22-16N | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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| VUO122-16NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 125A Max. forward impulse current: 1kA Electrical mounting: THT Version: module Max. forward voltage: 1.13V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CPC1215G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC Case: DIP4 Mounting: THT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 5ms Body dimensions: 19.2x6.4x3.3mm Control current max.: 50mA Max. operating current: 0.5A On-state resistance: 6Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
на замовлення 342 шт: термін постачання 21-30 дні (днів) |
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CPC1217Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 200mA; max.60VAC Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 19.2x6.4x3.3mm Max. operating current: 200mA On-state resistance: 16Ω Control voltage: 5...12V DC Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Insulation voltage: 2.5kV Case: SIP4 Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1708J | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 5350mA Switched voltage: max. 60V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 80mΩ Mounting: THT Case: i4-pac Operating temperature: -40...85°C Turn-on time: 20ms Turn-off time: 5ms Body dimensions: 19.91x20.88x5.03mm Control current max.: 50mA Insulation voltage: 2.5kV Kind of output: MOSFET |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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OAA160 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 50mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 100Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 125µs Turn-off time: 125µs Operating temperature: -40...85°C |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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LCC120S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
на замовлення 567 шт: термін постачання 21-30 дні (днів) |
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MEE250-12DA | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 260A Case: Y4-M6 Max. forward voltage: 1.54V Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VBO88-08NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 800V; If: 90A; Ifsm: 1kA; THT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 90A Max. forward impulse current: 1kA Electrical mounting: THT Mechanical mounting: screw Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 2 |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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VBO88-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 90A; Ifsm: 1kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 90A Max. forward impulse current: 1kA Electrical mounting: THT Mechanical mounting: screw Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VBO88-16NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 1kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 90A Max. forward impulse current: 1kA Electrical mounting: THT Mechanical mounting: screw Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFN400N15X3 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 400A Pulsed drain current: 900A Power dissipation: 695W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.5mΩ Gate charge: 365nC Kind of channel: enhancement Reverse recovery time: 132ns Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXFK400N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 400A; Idm: 900A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 400A Pulsed drain current: 900A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 365nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 132ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IXFX400N15X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 400A; Idm: 900A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 400A Pulsed drain current: 900A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 365nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 132ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CS19-12HO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube Max. off-state voltage: 1.2kV Load current: 20A Case: TO220AB Mounting: THT Max. load current: 31A Max. forward impulse current: 180A Kind of package: tube Type of thyristor: thyristor Gate current: 28mA |
на замовлення 436 шт: термін постачання 21-30 дні (днів) |
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CS19-08ho1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube Mounting: THT Case: TO220AB Kind of package: tube Load current: 20A Max. load current: 31A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Gate current: 28/50mA |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
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CS19-08HO1S-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube Mounting: SMD Case: D2PAK Kind of package: tube Load current: 20A Max. load current: 31A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Gate current: 28/50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CS19-08HO1S-TRL | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape Mounting: SMD Case: D2PAK Kind of package: reel; tape Load current: 20A Max. load current: 31A Max. forward impulse current: 155A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Gate current: 28/50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CS19-12HO1S | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape Mounting: SMD Case: D2PAK Kind of package: reel; tape Load current: 20A Max. load current: 31A Max. forward impulse current: 180A Max. off-state voltage: 1.2kV Type of thyristor: thyristor Gate current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CS19-12HO1S-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube Mounting: SMD Case: D2PAK Kind of package: tube Load current: 20A Max. load current: 31A Max. forward impulse current: 155A Max. off-state voltage: 1.2kV Type of thyristor: thyristor Gate current: 28/50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTP8N70X2M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 32W Features of semiconductor devices: ultra junction x-class Gate charge: 12nC Reverse recovery time: 200ns |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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PLA171P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x2.16mm Max. operating current: 0.1A Control current max.: 50mA On-state resistance: 50Ω Switched voltage: max. 800V AC; max. 800V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Type of relay: solid state Contacts configuration: SPST-NO |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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PLA134 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 350mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 3Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Insulation voltage: 3.75kV Kind of output: MOSFET |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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CPC1511Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 450mA Switched voltage: max. 230V AC; max. 230V DC Relay variant: 1-phase; current source On-state resistance: 4Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Turn-on time: 4ms Turn-off time: 2ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Insulation voltage: 3.75kV Kind of output: MOSFET |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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DMA50I800HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 |
на замовлення 271 шт: термін постачання 21-30 дні (днів) |
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DMA50I1200HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 |
на замовлення 293 шт: термін постачання 21-30 дні (днів) |
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DMA50I1600HA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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IXFK32N80Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264 Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 0.14µC On-state resistance: 0.27Ω Drain current: 32A Power dissipation: 1kW Drain-source voltage: 800V Kind of channel: enhancement Case: TO264 |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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IXTP80N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO220AB On-state resistance: 14mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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IXTP80N12T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 80A Power dissipation: 325W Case: TO220AB On-state resistance: 17mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 90ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCC95-12io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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IXTK20N150 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us Case: TO264 Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 215nC Reverse recovery time: 1.1µs On-state resistance: 1Ω Drain current: 20A Power dissipation: 1.25kW Drain-source voltage: 1.5kV Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTX20N150 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us Case: PLUS247™ Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 215nC Reverse recovery time: 1.1µs On-state resistance: 1Ω Drain current: 20A Power dissipation: 1.25kW Drain-source voltage: 1.5kV Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFK220N15P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264 Case: TO264 Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 162nC On-state resistance: 9mΩ Drain current: 220A Power dissipation: 1.25kW Drain-source voltage: 150V Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTQ120N15P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFH160N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Case: TO247-3 Mounting: THT Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Polarisation: unipolar Gate charge: 253nC On-state resistance: 9mΩ Drain current: 160A Power dissipation: 880W Drain-source voltage: 150V |
на замовлення 285 шт: термін постачання 21-30 дні (днів) |
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IXFK360N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4mΩ Drain current: 360A Power dissipation: 1.67kW Drain-source voltage: 150V Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFN360N15T2 | IXYS |
Category: Transistor modules MOSFETDescription: Semiconductor module; single transistor; 150V; 310A; SOT227B Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 310A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 4mΩ Pulsed drain current: 900A Power dissipation: 1.07kW Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhancement Gate charge: 715nC Reverse recovery time: 150ns Gate-source voltage: ±30V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFX360N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns Case: PLUS247™ Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4mΩ Drain current: 360A Power dissipation: 1.67kW Drain-source voltage: 150V Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MMIX1H60N150V1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.5kV; SMPD; SMD; 32kA Type of thyristor: thyristor Max. off-state voltage: 1.5kV Case: SMPD Mounting: SMD Max. forward impulse current: 32kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4.4mΩ Drain current: 235A Power dissipation: 680W Drain-source voltage: 150V Pulsed drain current: 900A Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXTA4N70X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 11.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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CPC1025N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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DSEI2x61-06P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT Max. off-state voltage: 0.6kV Load current: 60A x2 Max. forward impulse current: 0.55kA Electrical mounting: THT Max. forward voltage: 1.5V Case: ECO-PAC 1 Mechanical mounting: screw Max. load current: 60A Type of semiconductor module: diode Semiconductor structure: double independent |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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VBE17-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 19A Max. forward impulse current: 35A Electrical mounting: THT Version: module Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBE26-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 32A Max. forward impulse current: 75A Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Technology: FRED |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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VUE75-06NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 86A Max. forward impulse current: 215A Electrical mounting: THT Version: module Max. forward voltage: 1.57V Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBO54-08NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 55A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBO68-08NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 70A Max. forward impulse current: 0.55kA Electrical mounting: THT Version: module Leads: wire Ø 0.75mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBO54-16NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 55A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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VBO54-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 55A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| LDA102S |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
товару немає в наявності
В кошику
од. на суму грн.
| IXDF602PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.35 грн |
| 10+ | 70.02 грн |
| 25+ | 59.56 грн |
| 50+ | 54.73 грн |
| IXDD614PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
на замовлення 1047 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.15 грн |
| 10+ | 116.70 грн |
| 25+ | 111.07 грн |
| IXDI614PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
на замовлення 513 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.63 грн |
| 10+ | 151.31 грн |
| 25+ | 131.19 грн |
| 50+ | 118.31 грн |
| 100+ | 115.90 грн |
| IXDN609PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.15 грн |
| 10+ | 79.68 грн |
| 50+ | 74.05 грн |
| IXDF604PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 415 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 123.08 грн |
| 10+ | 105.44 грн |
| 50+ | 91.75 грн |
| 100+ | 85.31 грн |
| 250+ | 76.46 грн |
| IXDI602PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.68 грн |
| 10+ | 88.53 грн |
| 25+ | 75.66 грн |
| 50+ | 66.80 грн |
| 100+ | 60.36 грн |
| 250+ | 52.32 грн |
| IXDD614SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.30 грн |
| 10+ | 189.14 грн |
| IXDI602SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.68 грн |
| 10+ | 88.53 грн |
| 25+ | 74.05 грн |
| 100+ | 57.95 грн |
| 300+ | 54.73 грн |
| FUO22-16N |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1287.15 грн |
| 5+ | 1033.43 грн |
| VUO122-16NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| CPC1215G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Case: DIP4
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
On-state resistance: 6Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Case: DIP4
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
On-state resistance: 6Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 342 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 382.24 грн |
| 25+ | 227.77 грн |
| CPC1217Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 200mA; max.60VAC
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
On-state resistance: 16Ω
Control voltage: 5...12V DC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 200mA; max.60VAC
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
On-state resistance: 16Ω
Control voltage: 5...12V DC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Manufacturer series: OptoMOS
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| CPC1708J |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 798.29 грн |
| 10+ | 635.83 грн |
| 25+ | 597.20 грн |
| 100+ | 537.64 грн |
| OAA160 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 125µs
Turn-off time: 125µs
Operating temperature: -40...85°C
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 435.12 грн |
| 10+ | 322.75 грн |
| LCC120S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 567 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 365.77 грн |
| 10+ | 302.62 грн |
| 25+ | 284.92 грн |
| 50+ | 284.11 грн |
| MEE250-12DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
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| VBO88-08NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 90A; Ifsm: 1kA; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 90A; Ifsm: 1kA; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1733.53 грн |
| 3+ | 1422.98 грн |
| 10+ | 1287.76 грн |
| VBO88-12NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 90A; Ifsm: 1kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 90A; Ifsm: 1kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
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| VBO88-16NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 1kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 1kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
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| IXFN400N15X3 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 400A
Pulsed drain current: 900A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.5mΩ
Gate charge: 365nC
Kind of channel: enhancement
Reverse recovery time: 132ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 400A
Pulsed drain current: 900A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.5mΩ
Gate charge: 365nC
Kind of channel: enhancement
Reverse recovery time: 132ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
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| IXFK400N15X3 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 400A; Idm: 900A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 400A
Pulsed drain current: 900A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 365nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 132ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 400A; Idm: 900A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 400A
Pulsed drain current: 900A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 365nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 132ns
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| IXFX400N15X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 400A; Idm: 900A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 400A
Pulsed drain current: 900A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 365nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 132ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 400A; Idm: 900A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 400A
Pulsed drain current: 900A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 365nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 132ns
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| CS19-12HO1 | ![]() |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
на замовлення 436 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.09 грн |
| 3+ | 197.99 грн |
| 10+ | 156.14 грн |
| 50+ | 115.09 грн |
| CS19-08ho1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Case: TO220AB
Kind of package: tube
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Gate current: 28/50mA
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Case: TO220AB
Kind of package: tube
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Gate current: 28/50mA
на замовлення 129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 219.29 грн |
| 10+ | 114.29 грн |
| CS19-08HO1S-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Gate current: 28/50mA
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Gate current: 28/50mA
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| CS19-08HO1S-TRL |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Gate current: 28/50mA
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Gate current: 28/50mA
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| CS19-12HO1S |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Type of thyristor: thyristor
Gate current: 50mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Type of thyristor: thyristor
Gate current: 50mA
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| CS19-12HO1S-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 1.2kV
Type of thyristor: thyristor
Gate current: 28/50mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 155A
Max. off-state voltage: 1.2kV
Type of thyristor: thyristor
Gate current: 28/50mA
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| IXTP8N70X2M |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 32W
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 32W
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
на замовлення 298 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.73 грн |
| 10+ | 137.63 грн |
| 30+ | 135.22 грн |
| PLA171P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Max. operating current: 0.1A
Control current max.: 50mA
On-state resistance: 50Ω
Switched voltage: max. 800V AC; max. 800V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Max. operating current: 0.1A
Control current max.: 50mA
On-state resistance: 50Ω
Switched voltage: max. 800V AC; max. 800V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.36 грн |
| 10+ | 247.89 грн |
| 50+ | 206.04 грн |
| 100+ | 190.75 грн |
| PLA134 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1337.42 грн |
| CPC1511Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 351.04 грн |
| 10+ | 288.94 грн |
| 125+ | 262.38 грн |
| DMA50I800HA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
на замовлення 271 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.10 грн |
| 3+ | 222.14 грн |
| 10+ | 205.24 грн |
| 30+ | 196.38 грн |
| 120+ | 180.29 грн |
| DMA50I1200HA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
на замовлення 293 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 311.17 грн |
| 10+ | 250.31 грн |
| 30+ | 222.14 грн |
| 120+ | 188.34 грн |
| DMA50I1600HA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 301.63 грн |
| 3+ | 252.72 грн |
| 10+ | 222.94 грн |
| 30+ | 204.43 грн |
| IXFK32N80Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Case: TO264
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1357.35 грн |
| 3+ | 1115.53 грн |
| 10+ | 999.63 грн |
| IXTP80N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 103 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 219.29 грн |
| 10+ | 168.21 грн |
| 50+ | 148.90 грн |
| 100+ | 140.04 грн |
| IXTP80N12T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
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| MCC95-12io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2530.09 грн |
| 3+ | 2197.25 грн |
| IXTK20N150 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
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| IXTX20N150 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
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| IXFK220N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 162nC
On-state resistance: 9mΩ
Drain current: 220A
Power dissipation: 1.25kW
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 162nC
On-state resistance: 9mΩ
Drain current: 220A
Power dissipation: 1.25kW
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
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| IXTQ120N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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| IXFH160N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
на замовлення 285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 559.06 грн |
| 30+ | 421.74 грн |
| IXFK360N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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| IXFN360N15T2 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 150V; 310A; SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 310A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 150V; 310A; SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 310A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXFX360N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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| MMIX1H60N150V1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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| MMIX1F360N15T2 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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| IXTA4N70X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.48 грн |
| 10+ | 128.78 грн |
| CPC1025N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 433.38 грн |
| DSEI2x61-06P |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Case: ECO-PAC 1
Mechanical mounting: screw
Max. load current: 60A
Type of semiconductor module: diode
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Case: ECO-PAC 1
Mechanical mounting: screw
Max. load current: 60A
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1452.70 грн |
| 10+ | 1220.96 грн |
| VBE17-12NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 19A
Max. forward impulse current: 35A
Electrical mounting: THT
Version: module
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 19A
Max. forward impulse current: 35A
Electrical mounting: THT
Version: module
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1259.41 грн |
| 10+ | 962.60 грн |
| 25+ | 837.05 грн |
| VBE26-12NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1201.34 грн |
| 10+ | 915.92 грн |
| VUE75-06NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 86A
Max. forward impulse current: 215A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 86A
Max. forward impulse current: 215A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1554.11 грн |
| 10+ | 1191.99 грн |
| 25+ | 1025.38 грн |
| VBO54-08NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1075.66 грн |
| 3+ | 882.12 грн |
| 10+ | 805.66 грн |
| VBO68-08NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1224.74 грн |
| 10+ | 935.24 грн |
| 25+ | 805.66 грн |
| VBO54-16NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1192.67 грн |
| 3+ | 965.82 грн |
| 10+ | 875.68 грн |
| VBO54-12NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1060.92 грн |
| 3+ | 869.24 грн |
| 10+ | 785.54 грн |





































