Продукція > IXYS > Всі товари виробника IXYS (16262) > Сторінка 265 з 272

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MDD142-16N1 MDD142-16N1 IXYS MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Max. forward impulse current: 4kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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DSS60-0045B DSS60-0045B IXYS DSS60-0045B.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Max. forward voltage: 0.57V
Power dissipation: 155W
Max. off-state voltage: 45V
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: Schottky rectifying
Max. forward impulse current: 0.6kA
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH8N250CHV IXYH8N250CHV IXYS IXY_8N250CHV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXYA8N250CHV IXYA8N250CHV IXYS IXY_8N250CHV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263
Case: TO263
Mounting: SMD
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXYH8N250C IXYS DS100789A(IXYH8N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
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IXYH8N250CV1HV IXYH8N250CV1HV IXYS IXYH8N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXTH58N25L2 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns
Case: TO247-3
Mounting: THT
Power dissipation: 540W
Drain current: 58A
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 64mΩ
Reverse recovery time: 400ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFP34N65X3 IXFP34N65X3 IXYS media?resourcetype=datasheets&itemid=B8B82367-8165-4FDB-9BE0-FBB097CFCC0B&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
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IXTA34N65X2-TRL IXTA34N65X2-TRL IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTT34N65X2HV IXTT34N65X2HV IXYS IXTT34N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXXK110N65B4H1 IXXK110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
на замовлення 290 шт:
термін постачання 14-30 дні (днів)
1+1291.94 грн
3+1134.29 грн
100+1090.99 грн
В кошику  од. на суму  грн.
IXYP10N65C3 IXYP10N65C3 IXYS IXYP10N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Gate charge: 18nC
Turn-on time: 44ns
Kind of package: tube
Turn-off time: 128ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 54A
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Technology: GenX4™; XPT™
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 70A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 490A
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IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXXH110N65B4 IXYS littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Pulsed collector current: 570A
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
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IXTP6N100D2 IXTP6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
1+814.66 грн
2+491.58 грн
6+465.26 грн
50+447.43 грн
В кошику  од. на суму  грн.
IXTH6N100D2 IXTH6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTA6N100D2HV IXTA6N100D2HV IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf?assetguid=d5edabee-7480-4970-a92b-1b6b944040ed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 6A; 300W; D2PAK,TO263AB; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.2Ω
Mounting: SMD
Reverse recovery time: 952ns
Gate charge: 95nC
Gate-source voltage: 20V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTA6N100D2 IXTA6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXTA6N100D2-TRL IXTA6N100D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 800mA; 300W; D2PAK,TO263; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 2.2Ω
Mounting: SMD
Reverse recovery time: 952ns
Gate charge: 95nC
Gate-source voltage: 20V
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFH6N100F IXYS DS98732A(IXFH-FT6N100F).pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 6A; 180W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFH26N100X IXYS littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFK26N100P IXFK26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFN36N100 IXFN36N100 IXYS IXFN36N100.pdf description Category: Transistor modules
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Semiconductor structure: single transistor
Pulsed drain current: 144A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXFT26N100XHV IXYS littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 26A; 860W; D3PAK,TO268; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFX26N100P IXFX26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: PLUS247™
On-state resistance: 390mΩ
Power dissipation: 780W
Gate charge: 197nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA1R6N100D2-TRL IXTA1R6N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; 100W; D2PAK,TO263; 970ns
Mounting: SMD
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Drain current: 1.6A
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTY1R6N100D2-TRL IXTY1R6N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
On-state resistance: 10Ω
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
Power dissipation: 100W
Gate charge: 27nC
Drain current: 1.6A
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXFP7N100P IXFP7N100P IXYS IXF_7N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220AB
On-state resistance: 1.9Ω
Reverse recovery time: 300ns
Power dissipation: 300W
Gate charge: 47nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
1+541.28 грн
3+369.32 грн
8+348.95 грн
10+335.36 грн
В кошику  од. на суму  грн.
IXFA7N100P IXFA7N100P IXYS IXF_7N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 1.9Ω
Reverse recovery time: 300ns
Power dissipation: 300W
Gate charge: 47nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
1+620.83 грн
4+303.10 грн
9+286.97 грн
В кошику  од. на суму  грн.
IXFH7N100P IXFH7N100P IXYS IXF_7N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA7N100P-TRL IXFA7N100P-TRL IXYS littelfuse-discrete-mosfets-ixf-7n100p-datasheet?assetguid=2a6e65f4-034a-4ea8-af00-941e933d8061 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 7A; 300W; D2PAK,TO263; 300ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 1.9Ω
Reverse recovery time: 300ns
Power dissipation: 300W
Gate charge: 47nC
Technology: HiPerFET™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGH72N60A3 IXGH72N60A3 IXYS IXG_72N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+797.29 грн
2+538.28 грн
5+508.56 грн
30+498.37 грн
В кошику  од. на суму  грн.
IXGH48N60A3 IXGH48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGP48N60A3 IXGP48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGP36N60A3 IXGP36N60A3 IXYS IXGA(P,H)36N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXGA36N60A3-TRL IXGA36N60A3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGT72N60A3-TRL IXYS littelfuse-discrete-igbts-ixg-72n60a3-datasheet?assetguid=6e16c9d0-fe75-42ee-bf54-c662531444c2 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXGX72N60A3H1 IXGX72N60A3H1 IXYS IXGK(X)72N60A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
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В кошику  од. на суму  грн.
IXYA20N65C3D1 IXYA20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
2+259.67 грн
3+216.50 грн
6+189.33 грн
15+179.14 грн
50+172.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH20N65X IXTH20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
1+664.71 грн
3+454.22 грн
6+428.75 грн
В кошику  од. на суму  грн.
IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Pulsed drain current: 22A
Gate charge: 27nC
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
2+399.56 грн
3+333.66 грн
4+274.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXYP20N65C3 IXYP20N65C3 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYA20N65C3 IXYA20N65C3 IXYS IXYA(H)20N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
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В кошику  од. на суму  грн.
IXTH20N65X2 IXTH20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXTP20N65X IXTP20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXTA20N65X IXTA20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
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В кошику  од. на суму  грн.
IXTP20N65X2 IXTP20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXYA20N65C3-TRL IXYA20N65C3-TRL IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 230W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFN160N30T IXFN160N30T IXYS IXFN160N30T.pdf Category: Transistor modules
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Pulsed drain current: 444A
Type of semiconductor module: MOSFET transistor
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IXFX160N30T IXFX160N30T IXYS IXF_160N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXFK160N30T IXFK160N30T IXYS IXF_160N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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В кошику  од. на суму  грн.
IXFB300N10P IXFB300N10P IXYS IXFB300N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT140N10P-TRL IXYS littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTT140N10P-TRL IXYS littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 120ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Reverse recovery time: 0.5µs
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IXFA10N60P IXFA10N60P IXYS IXFA(P)10N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 120ns
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MDD142-16N1 MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MDD142-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Max. forward impulse current: 4kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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В кошику  од. на суму  грн.
DSS60-0045B description DSS60-0045B.pdf
DSS60-0045B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Max. forward voltage: 0.57V
Power dissipation: 155W
Max. off-state voltage: 45V
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: Schottky rectifying
Max. forward impulse current: 0.6kA
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH8N250CHV IXY_8N250CHV.pdf
IXYH8N250CHV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXYA8N250CHV IXY_8N250CHV.pdf
IXYA8N250CHV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263
Case: TO263
Mounting: SMD
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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В кошику  од. на суму  грн.
IXYH8N250C DS100789A(IXYH8N250C)_.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
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IXYH8N250CV1HV IXYH8N250CV1HV.pdf
IXYH8N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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В кошику  од. на суму  грн.
IXTH58N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns
Case: TO247-3
Mounting: THT
Power dissipation: 540W
Drain current: 58A
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 64mΩ
Reverse recovery time: 400ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP34N65X3 media?resourcetype=datasheets&itemid=B8B82367-8165-4FDB-9BE0-FBB097CFCC0B&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet
IXFP34N65X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
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IXTA34N65X2-TRL littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTA34N65X2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTT34N65X2HV IXTT34N65X2HV.pdf
IXTT34N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXXK110N65B4H1 IXX_110N65B4H1.pdf
IXXK110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
на замовлення 290 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1291.94 грн
3+1134.29 грн
100+1090.99 грн
В кошику  од. на суму  грн.
IXYP10N65C3 IXYP10N65C3.pdf
IXYP10N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Gate charge: 18nC
Turn-on time: 44ns
Kind of package: tube
Turn-off time: 128ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 54A
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IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Technology: GenX4™; XPT™
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
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IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 70A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 490A
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IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXXH110N65B4 littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Pulsed collector current: 570A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
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IXTP6N100D2 IXTA(H,P)6N100D2.pdf
IXTP6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+814.66 грн
2+491.58 грн
6+465.26 грн
50+447.43 грн
В кошику  од. на суму  грн.
IXTH6N100D2 IXTA(H,P)6N100D2.pdf
IXTH6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA6N100D2HV littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf?assetguid=d5edabee-7480-4970-a92b-1b6b944040ed
IXTA6N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 6A; 300W; D2PAK,TO263AB; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.2Ω
Mounting: SMD
Reverse recovery time: 952ns
Gate charge: 95nC
Gate-source voltage: 20V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA6N100D2 IXTA(H,P)6N100D2.pdf
IXTA6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXTA6N100D2-TRL littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTA6N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 800mA; 300W; D2PAK,TO263; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 2.2Ω
Mounting: SMD
Reverse recovery time: 952ns
Gate charge: 95nC
Gate-source voltage: 20V
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXFH6N100F DS98732A(IXFH-FT6N100F).pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 6A; 180W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFH26N100X littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK26N100P IXFK26N100P_IXFX26N100P.pdf
IXFK26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFN36N100 description IXFN36N100.pdf
IXFN36N100
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Semiconductor structure: single transistor
Pulsed drain current: 144A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXFT26N100XHV littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 26A; 860W; D3PAK,TO268; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFX26N100P IXFK26N100P_IXFX26N100P.pdf
IXFX26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: PLUS247™
On-state resistance: 390mΩ
Power dissipation: 780W
Gate charge: 197nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA1R6N100D2-TRL
IXTA1R6N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; 100W; D2PAK,TO263; 970ns
Mounting: SMD
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Drain current: 1.6A
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTY1R6N100D2-TRL
IXTY1R6N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
On-state resistance: 10Ω
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
Power dissipation: 100W
Gate charge: 27nC
Drain current: 1.6A
товару немає в наявності
Мінімальне замовлення: 2500 шт
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IXFP7N100P IXF_7N100P.pdf
IXFP7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220AB
On-state resistance: 1.9Ω
Reverse recovery time: 300ns
Power dissipation: 300W
Gate charge: 47nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+541.28 грн
3+369.32 грн
8+348.95 грн
10+335.36 грн
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IXFA7N100P IXF_7N100P.pdf
IXFA7N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 1.9Ω
Reverse recovery time: 300ns
Power dissipation: 300W
Gate charge: 47nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+620.83 грн
4+303.10 грн
9+286.97 грн
В кошику  од. на суму  грн.
IXFH7N100P IXF_7N100P.pdf
IXFH7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFA7N100P-TRL littelfuse-discrete-mosfets-ixf-7n100p-datasheet?assetguid=2a6e65f4-034a-4ea8-af00-941e933d8061
IXFA7N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 7A; 300W; D2PAK,TO263; 300ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 1.9Ω
Reverse recovery time: 300ns
Power dissipation: 300W
Gate charge: 47nC
Technology: HiPerFET™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGH72N60A3 IXG_72N60A3.pdf
IXGH72N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+797.29 грн
2+538.28 грн
5+508.56 грн
30+498.37 грн
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IXGH48N60A3 IXGA(P,H)48N60A3.pdf
IXGH48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP48N60A3 IXGA(P,H)48N60A3.pdf
IXGP48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP36N60A3 IXGA(P,H)36N60A3.pdf
IXGP36N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
товару немає в наявності
Мінімальне замовлення: 50 шт
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IXGA36N60A3-TRL
IXGA36N60A3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGT72N60A3-TRL littelfuse-discrete-igbts-ixg-72n60a3-datasheet?assetguid=6e16c9d0-fe75-42ee-bf54-c662531444c2
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXGX72N60A3H1 IXGK(X)72N60A3H1.pdf
IXGX72N60A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
товару немає в наявності
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IXYA20N65C3D1 IXY_20N65C3D1.pdf
IXYA20N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+259.67 грн
3+216.50 грн
6+189.33 грн
15+179.14 грн
50+172.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH20N65X IXTA(H,P)20N65X.pdf
IXTH20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+664.71 грн
3+454.22 грн
6+428.75 грн
В кошику  од. на суму  грн.
IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Pulsed drain current: 22A
Gate charge: 27nC
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+399.56 грн
3+333.66 грн
4+274.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXYP20N65C3
IXYP20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYA20N65C3 IXYA(H)20N65C3.pdf
IXYA20N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
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IXTH20N65X2 IXTA(H,P)20N65X2.pdf
IXTH20N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXTP20N65X IXTA(H,P)20N65X.pdf
IXTP20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXTA20N65X IXTA(H,P)20N65X.pdf
IXTA20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
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IXTP20N65X2 IXTA(H,P)20N65X2.pdf
IXTP20N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IXYA20N65C3-TRL littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
IXYA20N65C3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 230W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate charge: 30nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFN160N30T IXFN160N30T.pdf
IXFN160N30T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Pulsed drain current: 444A
Type of semiconductor module: MOSFET transistor
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IXFX160N30T IXF_160N30T.pdf
IXFX160N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK160N30T IXF_160N30T.pdf
IXFK160N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFB300N10P IXFB300N10P.pdf
IXFB300N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT140N10P-TRL littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTT140N10P-TRL littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 120ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Reverse recovery time: 0.5µs
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IXFA10N60P IXFA(P)10N60P.pdf
IXFA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 120ns
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В кошику  од. на суму  грн.