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IXBT16N170AHV IXBT16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1088.03 грн
3+898.78 грн
10+806.94 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGP30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+794.83 грн
В кошику  од. на суму  грн.
LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
3+188.11 грн
50+159.09 грн
250+142.69 грн
Мінімальне замовлення: 3
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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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IXFT50N85XHV IXFT50N85XHV IXYS IXF_50N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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DSEP29-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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IX2120B IX2120B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
4+116.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
1+883.14 грн
10+764.29 грн
30+701.97 грн
В кошику  од. на суму  грн.
IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 200V; 115A; SOT227B
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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CLA80E1200HF CLA80E1200HF IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
1+604.95 грн
5+484.65 грн
10+447.75 грн
В кошику  од. на суму  грн.
IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
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IXYX50N170C IXYX50N170C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXGH28N60B3D1 IXGH28N60B3D1 IXYS IXGH28N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 80nC
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
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IXA70I1200NA IXA70I1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+2758.04 грн
3+2302.72 грн
В кошику  од. на суму  грн.
IXTP230N075T2 IXTP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
2+417.72 грн
10+302.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
2+294.09 грн
10+199.27 грн
25+187.79 грн
50+179.59 грн
100+171.39 грн
Мінімальне замовлення: 2
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LBA716STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXFT100N30X3HV IXFT100N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXTP3N120 IXTP3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
1+528.12 грн
5+447.75 грн
10+426.43 грн
50+381.33 грн
В кошику  од. на суму  грн.
IXTP130N15X4 IXTP130N15X4 IXYS IXTH(P)130N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Gate charge: 87nC
Reverse recovery time: 93ns
On-state resistance: 8.5mΩ
Power dissipation: 400W
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
2+440.69 грн
3+368.21 грн
10+325.56 грн
50+291.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH130N15X3 IXFH130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+675.60 грн
В кошику  од. на суму  грн.
VHFD29-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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LCA712 LCA712 IXYS LCA712.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 350µs
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+441.57 грн
В кошику  од. на суму  грн.
DMA40U1800GU DMA40U1800GU IXYS media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Case: GUFP
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: three-phase
Max. forward impulse current: 370A
Max. forward voltage: 0.74V
Load current: 40A
Max. off-state voltage: 1.8kV
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
1+949.38 грн
14+814.32 грн
56+763.47 грн
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IXTH02N250 IXTH02N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Mounting: THT
Reverse recovery time: 1.5µs
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 450Ω
Drain current: 0.2A
Power dissipation: 83W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
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IXFL32N120P IXFL32N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 360nC
On-state resistance: 0.34Ω
Drain current: 24A
Power dissipation: 520W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1851.94 грн
В кошику  од. на суму  грн.
IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Mounting: SMD
Kind of output: non-inverting
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)
4+111.28 грн
10+63.06 грн
25+53.22 грн
100+41.74 грн
300+35.10 грн
500+32.56 грн
1000+29.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IX9907N IX9907N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
13+34.44 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IX9908N IX9908N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
9+51.22 грн
10+42.64 грн
25+37.72 грн
100+33.62 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IXTQ460P2 IXTQ460P2 IXYS IXTQ460P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Technology: Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of package: tube
Kind of channel: enhancement
Case: TO3P
Type of transistor: N-MOSFET
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
2+412.43 грн
10+277.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP260N055T2 IXTP260N055T2 IXYS IXTA(P)260N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 308 шт:
термін постачання 21-30 дні (днів)
2+394.76 грн
3+343.60 грн
10+296.04 грн
50+285.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK32P60P IXTK32P60P IXYS IXTK32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Kind of package: tube
Kind of channel: enhancement
Case: TO264
Type of transistor: P-MOSFET
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
1+1292.03 грн
10+1101.34 грн
В кошику  од. на суму  грн.
IXTT16P60P IXTT16P60P IXYS IXT_16P60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Kind of package: tube
Kind of channel: enhancement
Case: TO268
Type of transistor: P-MOSFET
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
1+991.77 грн
10+651.95 грн
30+646.21 грн
В кошику  од. на суму  грн.
IXFB210N20P IXFB210N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Drain-source voltage: 200V
Drain current: 210A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
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IXFL210N30P3 IXFL210N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC4111820&compId=IXFL210N30P3.pdf?ci_sign=8debaaf3e40442e35f52c30c53f9fb7705cad9b7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
On-state resistance: 16mΩ
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Kind of package: tube
Kind of channel: enhancement
Case: ISOPLUS264™
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+946.73 грн
В кошику  од. на суму  грн.
IXFN210N30X3 IXFN210N30X3 IXYS IXFN210N30X3.pdf 300VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Mechanical mounting: screw
Gate charge: 375nC
Reverse recovery time: 190ns
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+3163.41 грн
3+2895.63 грн
В кошику  од. на суму  грн.
IXFB210N30P3 IXFB210N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46B16B9872A18&compId=IXFB210N30P3.pdf?ci_sign=bf9c00172d85f0f1adf86ab7c01e6aacacfaa7ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 14.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1890W
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: PLUS264™
Type of transistor: N-MOSFET
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IXFX210N30X3 IXFX210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: PLUS247™
Type of transistor: N-MOSFET
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IXFR44N50Q IXFR44N50Q IXYS IXFR44N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
1+1507.52 грн
3+1306.35 грн
10+1216.97 грн
В кошику  од. на суму  грн.
IXFR44N50Q3 IXFR44N50Q3 IXYS IXFR44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFH44N50Q3 IXFH44N50Q3 IXYS IXFH(T)44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFR44N50P IXFR44N50P IXYS IXFR44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50P IXFT44N50P IXYS IXFK44N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50Q3 IXFT44N50Q3 IXYS IXFH(T)44N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IXTQ44N50P IXTQ44N50P IXYS IXTQ44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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CPC1976YX6 CPC1976YX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AFC0C7&compId=CPC1976YX6.pdf?ci_sign=e33d691a54e5fb0e6bd851fcf1f909cfda4963d9 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
товару немає в наявності
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CPC5712U CPC5712U IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85CD8B72C8D8BF&compId=CPC5712.pdf?ci_sign=ecc7e95d5c1594f45f4608f513d2fdc393fd7c97 Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Output current: -500...500µA
Case: SOP16
Type of integrated circuit: driver
Mounting: SMD
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
3+188.99 грн
10+109.89 грн
25+93.49 грн
100+75.45 грн
300+64.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LF2304NTR LF2304NTR IXYS LF2304NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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LAA125L LAA125L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+355.02 грн
10+264.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA125P LAA125P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+293.20 грн
100+224.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXBT16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBT16N170AHV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1088.03 грн
3+898.78 грн
10+806.94 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGA(H,P)30N120B3.pdf
IXGP30N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+794.83 грн
В кошику  од. на суму  грн.
LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+188.11 грн
50+159.09 грн
250+142.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LOC110P LOC110.pdf
LOC110P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR LOC110.pdf
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
товару немає в наявності
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IXFT50N85XHV IXF_50N85X.pdf
IXFT50N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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DSEP29-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
товару немає в наявності
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
товару немає в наявності
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IX2120B pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c
IX2120B
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+116.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+883.14 грн
10+764.29 грн
30+701.97 грн
В кошику  од. на суму  грн.
IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 200V; 115A; SOT227B
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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CLA80E1200HF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf
CLA80E1200HF
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+604.95 грн
5+484.65 грн
10+447.75 грн
В кошику  од. на суму  грн.
IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXYX100N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953
IXYX100N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
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IXYX50N170C pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b
IXYX50N170C
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
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IXGH30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGH30N120B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXGH28N60B3D1 IXGH28N60B3D1.pdf
IXGH28N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
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IXGH30N120C3H1 IXGH30N120C3H1.pdf
IXGH30N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 80nC
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
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IXA70I1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae
IXA70I1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2758.04 грн
3+2302.72 грн
В кошику  од. на суму  грн.
IXTP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988
IXTP230N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+417.72 грн
10+302.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+294.09 грн
10+199.27 грн
25+187.79 грн
50+179.59 грн
100+171.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LBA716STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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IXTA380N036T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0
IXTA380N036T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXFT100N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT100N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXTP3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTP3N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+528.12 грн
5+447.75 грн
10+426.43 грн
50+381.33 грн
В кошику  од. на суму  грн.
IXTP130N15X4 IXTH(P)130N15X4.pdf
IXTP130N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Gate charge: 87nC
Reverse recovery time: 93ns
On-state resistance: 8.5mΩ
Power dissipation: 400W
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+440.69 грн
3+368.21 грн
10+325.56 грн
50+291.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFH130N15X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+675.60 грн
В кошику  од. на суму  грн.
VHFD29-16IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
товару немає в наявності
В кошику  од. на суму  грн.
LCA712 LCA712.pdf
LCA712
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Turn-off time: 350µs
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+441.57 грн
В кошику  од. на суму  грн.
DMA40U1800GU media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf
DMA40U1800GU
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Case: GUFP
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: three-phase
Max. forward impulse current: 370A
Max. forward voltage: 0.74V
Load current: 40A
Max. off-state voltage: 1.8kV
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+949.38 грн
14+814.32 грн
56+763.47 грн
В кошику  од. на суму  грн.
IXTH02N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c
IXTH02N250
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Mounting: THT
Reverse recovery time: 1.5µs
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 450Ω
Drain current: 0.2A
Power dissipation: 83W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFL32N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd
IXFL32N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 360nC
On-state resistance: 0.34Ω
Drain current: 24A
Power dissipation: 520W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1851.94 грн
В кошику  од. на суму  грн.
IX4310N
IX4310N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Mounting: SMD
Kind of output: non-inverting
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+111.28 грн
10+63.06 грн
25+53.22 грн
100+41.74 грн
300+35.10 грн
500+32.56 грн
1000+29.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IX9907N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.44 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IX9908N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd
IX9908N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+51.22 грн
10+42.64 грн
25+37.72 грн
100+33.62 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IXTQ460P2 IXTQ460P2.pdf
IXTQ460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Technology: Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of package: tube
Kind of channel: enhancement
Case: TO3P
Type of transistor: N-MOSFET
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+412.43 грн
10+277.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP260N055T2 IXTA(P)260N055T2.pdf
IXTP260N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 308 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+394.76 грн
3+343.60 грн
10+296.04 грн
50+285.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK32P60P IXTK32P60P.pdf
IXTK32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Kind of package: tube
Kind of channel: enhancement
Case: TO264
Type of transistor: P-MOSFET
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1292.03 грн
10+1101.34 грн
В кошику  од. на суму  грн.
IXTT16P60P IXT_16P60P.pdf
IXTT16P60P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Kind of package: tube
Kind of channel: enhancement
Case: TO268
Type of transistor: P-MOSFET
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+991.77 грн
10+651.95 грн
30+646.21 грн
В кошику  од. на суму  грн.
IXFB210N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178
IXFB210N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Drain-source voltage: 200V
Drain current: 210A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFL210N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC4111820&compId=IXFL210N30P3.pdf?ci_sign=8debaaf3e40442e35f52c30c53f9fb7705cad9b7
IXFL210N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
On-state resistance: 16mΩ
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Kind of package: tube
Kind of channel: enhancement
Case: ISOPLUS264™
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+946.73 грн
В кошику  од. на суму  грн.
IXFN210N30X3 IXFN210N30X3.pdf 300VProductBrief.pdf
IXFN210N30X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Mechanical mounting: screw
Gate charge: 375nC
Reverse recovery time: 190ns
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3163.41 грн
3+2895.63 грн
В кошику  од. на суму  грн.
IXFB210N30P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46B16B9872A18&compId=IXFB210N30P3.pdf?ci_sign=bf9c00172d85f0f1adf86ab7c01e6aacacfaa7ad
IXFB210N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 14.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1890W
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: PLUS264™
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFX210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFX210N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: PLUS247™
Type of transistor: N-MOSFET
товару немає в наявності
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IXFR44N50Q IXFR44N50Q.pdf
IXFR44N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1507.52 грн
3+1306.35 грн
10+1216.97 грн
В кошику  од. на суму  грн.
IXFR44N50Q3 IXFR44N50Q3.pdf
IXFR44N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFH44N50Q3 IXFH(T)44N50Q3.pdf
IXFH44N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR44N50P IXFR44N50P.pdf
IXFR44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50P IXFK44N50P.pdf
IXFT44N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IXFT44N50Q3 IXFH(T)44N50Q3.pdf
IXFT44N50Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ44N50P IXTQ44N50P.pdf
IXTQ44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
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CPC1976YX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AFC0C7&compId=CPC1976YX6.pdf?ci_sign=e33d691a54e5fb0e6bd851fcf1f909cfda4963d9
CPC1976YX6
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CPC5712U pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85CD8B72C8D8BF&compId=CPC5712.pdf?ci_sign=ecc7e95d5c1594f45f4608f513d2fdc393fd7c97
CPC5712U
Виробник: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Output current: -500...500µA
Case: SOP16
Type of integrated circuit: driver
Mounting: SMD
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+188.99 грн
10+109.89 грн
25+93.49 грн
100+75.45 грн
300+64.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LF2304NTR LF2304NTR.pdf
LF2304NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
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LAA125L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
LAA125L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+355.02 грн
10+264.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA125P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
LAA125P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+293.20 грн
100+224.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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