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MCC26-16io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Gate current: 100/200mA
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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IXFH46N65X2W IXYS ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 650W; TO247-3; 210ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 650W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
Reverse recovery time: 210ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA4N150HV-TRL IXTA4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D2PAK,TO263AB; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTT4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D3PAK,TO268; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
FDM47-06KC5FDM47-06KC5
FDM47-06KC5FDM47-06KC5
 FDM47-06KC5 IXYS FDM47-06KC5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Gate charge: 150nC
Polarisation: unipolar
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Features of semiconductor devices: super junction coolmos
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Semiconductor structure: diode/transistor
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 45mΩ
Topology: buck chopper
Mounting: THT
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+711.98 грн
3+630.65 грн
10+601.02 грн
В кошику  од. на суму  грн.
IXTA15N50L2-TRL IXTA15N50L2-TRL IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 15A; 300W; D2PAK,TO263; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: D2PAK; TO263
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Gate-source voltage: 20V
Type of transistor: N-MOSFET
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTH6N50D2 IXTH6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Power dissipation: 300W
на замовлення 205 шт:
термін постачання 14-30 дні (днів)
1+683.72 грн
10+525.68 грн
30+491.82 грн
120+449.50 грн
В кошику  од. на суму  грн.
IXTA6N50D2 IXTA6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 277 шт:
термін постачання 14-30 дні (днів)
1+751.18 грн
10+586.63 грн
25+492.67 грн
50+453.73 грн
В кошику  од. на суму  грн.
IXTP6N50D2 IXTP6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 129 шт:
термін постачання 14-30 дні (днів)
1+662.75 грн
10+436.80 грн
50+350.46 грн
100+338.60 грн
В кошику  од. на суму  грн.
IXTQ26N50P IXTQ26N50P IXYS IXTQ(T,V)26N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 163 шт:
термін постачання 14-30 дні (днів)
1+464.93 грн
3+397.01 грн
10+344.53 грн
30+340.30 грн
В кошику  од. на суму  грн.
IXTQ36N50P IXTQ36N50P IXYS IXTH(Q,T,V)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 265 шт:
термін постачання 14-30 дні (днів)
1+745.71 грн
30+590.87 грн
В кошику  од. на суму  грн.
IXFA26N50P3 IXFA26N50P3 IXYS IXFH26N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
4+142.21 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXTY1R6N50D2 IXTY1R6N50D2 IXYS IXTA(P,Y)1R6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 400ns
на замовлення 331 шт:
термін постачання 14-30 дні (днів)
2+297.19 грн
10+226.02 грн
25+187.08 грн
30+179.46 грн
50+159.99 грн
70+154.07 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA6N50D2-TRL IXTA6N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 6A; 300W; D2PAK,TO263; 350ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 96nC
Reverse recovery time: 0.35µs
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTN46N50L IXTN46N50L IXYS IXTN46N50L.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Type of semiconductor module: MOSFET transistor
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IXTK46N50L IXTK46N50L IXYS IXTK(X)46N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
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IXTX46N50L IXTX46N50L IXYS IXTK(X)46N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; PLUS247™; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
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IXFJ26N50P3 IXFJ26N50P3 IXYS IXFJ26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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IXFH36N50P IXFH36N50P IXYS IXFH(V,T)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFQ26N50P3 IXFQ26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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IXFR36N50P IXFR36N50P IXYS IXFR36N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; 156W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 156W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXG240W1200PZTEH IXYS MIXG240W1200PZTEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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LAA110P IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110L LAA110L IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110LS LAA110LS IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110LSTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PLTR IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PTR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110STR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCB717 LCB717 IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+770.33 грн
10+652.66 грн
В кошику  од. на суму  грн.
LCB717S LCB717S IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCB717STR IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LBA110LS LBA110LS IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110P LBA110P IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110STR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA110PTR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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LBA110LSTR IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA110PLTR IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; TO247PLUS-HV; THT; 7.6kA; tube
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV IXYS IXHH40N150HV.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; TO247HV; THT; 7.6kA; tube
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 7.6kA
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IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.2mΩ
Gate charge: 460nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Type of semiconductor module: MOSFET transistor
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
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IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Reverse recovery time: 140ns
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IXFH240N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 97ns
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MMJX1H40N150 IXYS MMJX1H40N150.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 15.5kA
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LCB710 LCB710 IXYS LCB710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCB710STR IXYS LCB710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXFN32N120P IXFN32N120P IXYS IXFN32N120P.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTA3N100P-TRL IXTA3N100P-TRL IXYS littelfuse-discrete-mosfets-ixt-3n100p-datasheet?assetguid=ec56a47a-d10f-43fa-8e9e-e6b982b889df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 820ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Reverse recovery time: 820ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTA3N100D2-TRL IXTA3N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTA3N100D2HV-TRL IXTA3N100D2HV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
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 Мінімальне замовлення: 800 шт
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CLA60PD1200NA CLA60PD1200NA IXYS CLA60PD1200NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Max. forward impulse current: 935A
Gate current: 40/80mA
Max. forward voltage: 1.09V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 60A
Max. load current: 94A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.79V
Case: SOT227B
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1974.59 грн
В кошику  од. на суму  грн.
MCMA25PD1200TB IXYS MCMA25PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Gate current: 55/80mA
Max. forward voltage: 1.25V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 0.4kA
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MCMA65PD1200TB IXYS MCMA65PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Gate current: 95/200mA
Max. forward voltage: 1.17V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 65A
Max. load current: 105A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.15kA
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MCMA140PD1200TB IXYS MCMA140PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.28V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 140A
Max. load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.4kA
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MCMA110PD1200TB IXYS MCMA110PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 110A
Max. load current: 170A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.9kA
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MCMA35PD1200TB IXYS MCMA35PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
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MCC26-16io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Gate current: 100/200mA
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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IXFH46N65X2W ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 650W; TO247-3; 210ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 650W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
Reverse recovery time: 210ns
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Мінімальне замовлення: 300 шт
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IXTA4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
IXTA4N150HV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D2PAK,TO263AB; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTT4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D3PAK,TO268; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
Мінімальне замовлення: 400 шт
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FDM47-06KC5 FDM47-06KC5.pdf
FDM47-06KC5FDM47-06KC5
FDM47-06KC5FDM47-06KC5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Gate charge: 150nC
Polarisation: unipolar
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Features of semiconductor devices: super junction coolmos
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Semiconductor structure: diode/transistor
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 45mΩ
Topology: buck chopper
Mounting: THT
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+711.98 грн
3+630.65 грн
10+601.02 грн
В кошику  од. на суму  грн.
IXTA15N50L2-TRL littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTA15N50L2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 15A; 300W; D2PAK,TO263; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: D2PAK; TO263
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Gate-source voltage: 20V
Type of transistor: N-MOSFET
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTH6N50D2 IXTA(H,P)6N50D2.pdf
IXTH6N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Power dissipation: 300W
на замовлення 205 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+683.72 грн
10+525.68 грн
30+491.82 грн
120+449.50 грн
В кошику  од. на суму  грн.
IXTA6N50D2 IXTA(H,P)6N50D2.pdf
IXTA6N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 277 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+751.18 грн
10+586.63 грн
25+492.67 грн
50+453.73 грн
В кошику  од. на суму  грн.
IXTP6N50D2 IXTA(H,P)6N50D2.pdf
IXTP6N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 129 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+662.75 грн
10+436.80 грн
50+350.46 грн
100+338.60 грн
В кошику  од. на суму  грн.
IXTQ26N50P IXTQ(T,V)26N50P_S.pdf
IXTQ26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 163 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+464.93 грн
3+397.01 грн
10+344.53 грн
30+340.30 грн
В кошику  од. на суму  грн.
IXTQ36N50P IXTH(Q,T,V)36N50P_S.pdf
IXTQ36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 265 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+745.71 грн
30+590.87 грн
В кошику  од. на суму  грн.
IXFA26N50P3 IXFH26N50P3.pdf
IXFA26N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+142.21 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXTY1R6N50D2 IXTA(P,Y)1R6N50D2.pdf
IXTY1R6N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 400ns
на замовлення 331 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+297.19 грн
10+226.02 грн
25+187.08 грн
30+179.46 грн
50+159.99 грн
70+154.07 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA6N50D2-TRL littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37
IXTA6N50D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 6A; 300W; D2PAK,TO263; 350ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 96nC
Reverse recovery time: 0.35µs
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTN46N50L IXTN46N50L.pdf
IXTN46N50L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTK46N50L IXTK(X)46N50L.pdf
IXTK46N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTX46N50L IXTK(X)46N50L.pdf
IXTX46N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; PLUS247™; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ26N50P3 IXFJ26N50P3.pdf
IXFJ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH36N50P IXFH(V,T)36N50P_S.pdf
IXFH36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFQ26N50P3 IXFH26N50P3.pdf
IXFQ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR36N50P IXFR36N50P.pdf
IXFR36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; 156W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 156W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240W1200PZTEH MIXG240W1200PZTEH.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
LAA110P LAA100.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110L LAA110L.pdf
LAA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LS LAA110L.pdf
LAA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LSTR LAA100L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PLTR LAA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110PTR LAA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA110STR LAA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCB717 LCB717.pdf
LCB717
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+770.33 грн
10+652.66 грн
В кошику  од. на суму  грн.
LCB717S LCB717.pdf
LCB717S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCB717STR LCB717.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA110LS LBA110L.pdf
LBA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110P LBA110.pdf
LBA110P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110STR LBA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA110PTR LBA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA110LSTR LBA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA110PLTR LBA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; TO247PLUS-HV; THT; 7.6kA; tube
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV.pdf
IXHH40N150HV
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; TO247HV; THT; 7.6kA; tube
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 7.6kA
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IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.2mΩ
Gate charge: 460nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Type of semiconductor module: MOSFET transistor
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
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IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK(X)240N15T2.pdf
IXFK240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Reverse recovery time: 140ns
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IXFH240N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 97ns
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MMJX1H40N150 MMJX1H40N150.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 15.5kA
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LCB710 LCB710.pdf
LCB710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCB710STR LCB710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXFN32N120P IXFN32N120P.pdf
IXFN32N120P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTA3N100P-TRL littelfuse-discrete-mosfets-ixt-3n100p-datasheet?assetguid=ec56a47a-d10f-43fa-8e9e-e6b982b889df
IXTA3N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 820ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Reverse recovery time: 820ns
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTA3N100D2-TRL
IXTA3N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTA3N100D2HV-TRL
IXTA3N100D2HV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
товару немає в наявності
Мінімальне замовлення: 800 шт
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CLA60PD1200NA CLA60PD1200NA.pdf
CLA60PD1200NA
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Max. forward impulse current: 935A
Gate current: 40/80mA
Max. forward voltage: 1.09V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 60A
Max. load current: 94A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.79V
Case: SOT227B
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1974.59 грн
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MCMA25PD1200TB MCMA25PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Gate current: 55/80mA
Max. forward voltage: 1.25V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 0.4kA
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MCMA65PD1200TB MCMA65PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Gate current: 95/200mA
Max. forward voltage: 1.17V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 65A
Max. load current: 105A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.15kA
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MCMA140PD1200TB MCMA140PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.28V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 140A
Max. load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.4kA
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MCMA110PD1200TB MCMA110PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 110A
Max. load current: 170A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.9kA
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MCMA35PD1200TB MCMA35PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
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