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IXFH110N10P IXFH110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 15mΩ
Drain current: 110A
Drain-source voltage: 100V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 204 шт:
термін постачання 21-30 дні (днів)
1+525.26 грн
5+418.52 грн
10+380.70 грн
20+341.26 грн
30+317.92 грн
120+316.31 грн
В кошику  од. на суму  грн.
CPC1726Y CPC1726Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
2+253.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA100E1200KB CLA100E1200KB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
1+588.53 грн
3+508.67 грн
10+437.84 грн
25+428.99 грн
В кошику  од. на суму  грн.
IXFK150N30P3 IXFK150N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+1425.83 грн
3+1257.99 грн
10+1101.04 грн
В кошику  од. на суму  грн.
IXTP120P065T IXTP120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
1+444.65 грн
50+319.53 грн
В кошику  од. на суму  грн.
MCMA140PD1600TB MCMA140PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 140A
Max. forward impulse current: 2.4kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 220A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+2723.37 грн
6+2322.81 грн
В кошику  од. на суму  грн.
IXTP10P50P IXTP10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Gate charge: 50nC
Reverse recovery time: 414ns
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
2+429.92 грн
5+334.01 грн
10+302.62 грн
50+272.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH90P10P IXTH90P10P IXYS IXT_90P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
1+793.96 грн
5+599.62 грн
10+528.79 грн
30+492.57 грн
В кошику  од. на суму  грн.
IXTP8N65X2 IXTP8N65X2 IXYS IXT_8N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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В кошику  од. на суму  грн.
IXFP16N50P IXFP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 21-30 дні (днів)
2+371.84 грн
10+233.41 грн
50+184.31 грн
100+183.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP16N50P IXTP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
2+309.44 грн
10+181.09 грн
50+174.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA16N50P3 IXFA16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
3+174.65 грн
10+153.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTT16N50D2 IXTT16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXTQ16N50P IXTQ16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
товару немає в наявності
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IXFH16N50P IXFH16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFA16N50P IXFA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXFH16N50P3 IXFH16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
товару немає в наявності
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IXTA16N50P IXTA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTH60N20L2 IXTH60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXDN630MYI IXDN630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+568.60 грн
10+470.03 грн
В кошику  од. на суму  грн.
FBE22-06N1 FBE22-06N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
1+984.64 грн
10+696.20 грн
В кошику  од. на суму  грн.
MCB20P1200LB-TUB MCB20P1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
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MCB20P1200LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
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IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
2+401.31 грн
10+309.06 грн
30+284.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
2+416.05 грн
10+305.04 грн
30+282.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH52N50P2 IXFH52N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
1+788.76 грн
3+663.20 грн
10+612.49 грн
30+571.45 грн
120+540.86 грн
В кошику  од. на суму  грн.
IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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LCA110 LCA110 IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
на замовлення 663 шт:
термін постачання 21-30 дні (днів)
3+146.48 грн
10+102.22 грн
50+99.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1125NTR CPC1125NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1225N CPC1225N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
на замовлення 112 шт:
термін постачання 21-30 дні (днів)
4+124.81 грн
10+100.61 грн
100+85.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFK120N20P IXFK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXTK120N20P IXTK120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Polarisation: unipolar
Type of transistor: N-MOSFET
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IXTH120P065T IXTH120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+561.66 грн
10+420.94 грн
30+368.62 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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LAA100P LAA100P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
2+313.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1983YE CPC1983YE IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49385343880C7&compId=CPC1983YE.pdf?ci_sign=974827daa00530c081d8f8338c456dd3b19928d6 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Turn-on time: 5ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 107 шт:
термін постачання 21-30 дні (днів)
2+350.17 грн
10+270.43 грн
25+255.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VUE22-12NO7 VUE22-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8896073AAE39C0C4&compId=VUE22-12NO7.pdf?ci_sign=26b20417a95d7d39b4b37d92c0b157bd49d6c9ae Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+1505.57 грн
3+1231.42 грн
10+1115.53 грн
В кошику  од. на суму  грн.
VUE22-06NO7 VUE22-06NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88960436DB59E0C4&compId=VUE22-06NO7.pdf?ci_sign=d488fd843cac84f64e5b7f9061a3e09fabaf9d12 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1458.76 грн
В кошику  од. на суму  грн.
IXGH12N120A3 IXGH12N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 50A
Case: D3PAK
Mounting: SMD
Max. load current: 79A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
1+589.40 грн
10+470.03 грн
30+412.89 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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CPC1150NTR CPC1150NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20F80C7&compId=CPC1150N.pdf?ci_sign=6c33409f6d640e230d2ef27a0b63d7a2c895247e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFT150N20T IXFT150N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1135NTR CPC1135NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFH170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFQ170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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PM1206 PM1206 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+647.47 грн
50+394.38 грн
В кошику  од. на суму  грн.
PM1204S PM1204S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+577.27 грн
50+350.92 грн
В кошику  од. на суму  грн.
IXFH44N50P IXFH44N50P IXYS IXFK44N50P.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
1+825.16 грн
6+668.83 грн
10+581.10 грн
30+544.08 грн
В кошику  од. на суму  грн.
IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1495.17 грн
3+1232.23 грн
В кошику  од. на суму  грн.
IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTT40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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PM1206S PM1206S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
товару немає в наявності
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PM1206STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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DSP25-12A DSP25-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEC87D9A344143&compId=DSP25-12A.pdf?ci_sign=9b32012fa217f3b41cdd73f28c4975da5fe89caa Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Kind of package: tube
Semiconductor structure: double series
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
2+318.97 грн
10+252.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1193.54 грн
3+977.90 грн
10+883.73 грн
В кошику  од. на суму  грн.
IXDD604SI IXDD604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
3+206.29 грн
10+145.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDI604PI IXDI604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 974 шт:
термін постачання 21-30 дні (днів)
4+110.95 грн
10+82.10 грн
50+76.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604PI IXDD604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
4+125.68 грн
10+85.31 грн
50+77.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH110N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC01F820&compId=IXFH110N10P.pdf?ci_sign=2692b409156b87ba36b15cc212f6c4d34cf32b38
IXFH110N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 15mΩ
Drain current: 110A
Drain-source voltage: 100V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 204 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+525.26 грн
5+418.52 грн
10+380.70 грн
20+341.26 грн
30+317.92 грн
120+316.31 грн
В кошику  од. на суму  грн.
CPC1726Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca
CPC1726Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+253.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA100E1200KB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39
CLA100E1200KB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+588.53 грн
3+508.67 грн
10+437.84 грн
25+428.99 грн
В кошику  од. на суму  грн.
IXFK150N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c
IXFK150N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1425.83 грн
3+1257.99 грн
10+1101.04 грн
В кошику  од. на суму  грн.
IXTP120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTP120P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+444.65 грн
50+319.53 грн
В кошику  од. на суму  грн.
MCMA140PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 140A
Max. forward impulse current: 2.4kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 220A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2723.37 грн
6+2322.81 грн
В кошику  од. на суму  грн.
IXTP10P50P IXT_10P50P.pdf
IXTP10P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Gate charge: 50nC
Reverse recovery time: 414ns
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+429.92 грн
5+334.01 грн
10+302.62 грн
50+272.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH90P10P IXT_90P10P.pdf
IXTH90P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+793.96 грн
5+599.62 грн
10+528.79 грн
30+492.57 грн
В кошику  од. на суму  грн.
IXTP8N65X2 IXT_8N65X2.pdf
IXTP8N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFP16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFP16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+371.84 грн
10+233.41 грн
50+184.31 грн
100+183.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTP16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+309.44 грн
10+181.09 грн
50+174.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFA16N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+174.65 грн
10+153.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTT16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTT16N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXTQ16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTQ16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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IXFH16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFH16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFA16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFA16N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXFH16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFH16N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTA16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTA16N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTH60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTH60N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXDN630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+568.60 грн
10+470.03 грн
В кошику  од. на суму  грн.
FBE22-06N1 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5933B49D018BF&compId=FBE22-06N1.pdf?ci_sign=7ea1713ca283cb8800d681aa2a8c9d4a27a181dc
FBE22-06N1
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+984.64 грн
10+696.20 грн
В кошику  од. на суму  грн.
MCB20P1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5
MCB20P1200LB-TUB
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
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MCB20P1200LB-TRR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492AAB14BE880D6&compId=MCB20P1200LB.pdf?ci_sign=6bfc7396ad52f2b8a4c26e9686129c71656ba3b5
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Case: SMPD-B
Drain-source voltage: 1.2kV
Semiconductor structure: double series
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
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IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+401.31 грн
10+309.06 грн
30+284.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+416.05 грн
10+305.04 грн
30+282.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH52N50P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4B656662E1820&compId=IXFH(T)52N50P2.pdf?ci_sign=7c44fe5509f3cb92524e6dfee4e7d8922d30699d
IXFH52N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Power dissipation: 960W
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+788.76 грн
3+663.20 грн
10+612.49 грн
30+571.45 грн
120+540.86 грн
В кошику  од. на суму  грн.
IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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LCA110 LCA110.pdf
LCA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
на замовлення 663 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+146.48 грн
10+102.22 грн
50+99.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1125NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1225N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003A60C7&compId=CPC1225N.pdf?ci_sign=4ce0245a05e1666e017a4e8632ce448230354fc0
CPC1225N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
на замовлення 112 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+124.81 грн
10+100.61 грн
100+85.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFK120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXTK120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Polarisation: unipolar
Type of transistor: N-MOSFET
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IXTH120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTH120P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+561.66 грн
10+420.94 грн
30+368.62 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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LAA100P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+313.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1983YE pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49385343880C7&compId=CPC1983YE.pdf?ci_sign=974827daa00530c081d8f8338c456dd3b19928d6
CPC1983YE
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Turn-on time: 5ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 107 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+350.17 грн
10+270.43 грн
25+255.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VUE22-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8896073AAE39C0C4&compId=VUE22-12NO7.pdf?ci_sign=26b20417a95d7d39b4b37d92c0b157bd49d6c9ae
VUE22-12NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1505.57 грн
3+1231.42 грн
10+1115.53 грн
В кошику  од. на суму  грн.
VUE22-06NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88960436DB59E0C4&compId=VUE22-06NO7.pdf?ci_sign=d488fd843cac84f64e5b7f9061a3e09fabaf9d12
VUE22-06NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1458.76 грн
В кошику  од. на суму  грн.
IXGH12N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180
IXGH12N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
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CLA50E1200TC-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d
CLA50E1200TC-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 50A
Case: D3PAK
Mounting: SMD
Max. load current: 79A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+589.40 грн
10+470.03 грн
30+412.89 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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CPC1150NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20F80C7&compId=CPC1150N.pdf?ci_sign=6c33409f6d640e230d2ef27a0b63d7a2c895247e
CPC1150NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFT150N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86
IXFT150N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1135NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFH170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFQ170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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PM1206 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
PM1206
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+647.47 грн
50+394.38 грн
В кошику  од. на суму  грн.
PM1204S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99
PM1204S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+577.27 грн
50+350.92 грн
В кошику  од. на суму  грн.
IXFH44N50P description IXFK44N50P.pdf
IXFH44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+825.16 грн
6+668.83 грн
10+581.10 грн
30+544.08 грн
В кошику  од. на суму  грн.
IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1495.17 грн
3+1232.23 грн
В кошику  од. на суму  грн.
IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTH(T,Q)40N50L2.pdf
IXTT40N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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PM1206S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
PM1206S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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PM1206STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3160C7&compId=PM1206.pdf?ci_sign=c09be491d231e3d21eac1f0a3551944d7ccc748d
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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DSP25-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEC87D9A344143&compId=DSP25-12A.pdf?ci_sign=9b32012fa217f3b41cdd73f28c4975da5fe89caa
DSP25-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Kind of package: tube
Semiconductor structure: double series
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+318.97 грн
10+252.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1193.54 грн
3+977.90 грн
10+883.73 грн
В кошику  од. на суму  грн.
IXDD604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+206.29 грн
10+145.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDI604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 974 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+110.95 грн
10+82.10 грн
50+76.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+125.68 грн
10+85.31 грн
50+77.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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