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IXYP8N90C3 IXYP8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
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IXYA8N90C3D1 IXYA8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
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IXFH18N90P IXFH18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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IXFK220N20X3 IXFK220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
1+1289.75 грн
3+1055.97 грн
10+957.78 грн
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IXFT220N20X3HV IXFT220N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
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IXFH220N20X3 IXFH220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
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MEA250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
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XAA117S XAA117S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+250.50 грн
50+152.92 грн
250+122.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117P XAA117P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
2+250.50 грн
50+152.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117 XAA117 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
2+250.50 грн
50+152.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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XAA117STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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IXGA30N120B3 IXGA30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Case: TO263
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXYH30N120C3 IXYH30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
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IXFN30N120P IXFN30N120P IXYS IXFN30N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±40V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Drain-source voltage: 1.2kV
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IXFB30N120P IXFB30N120P IXYS IXFB30N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Power dissipation: 1.25kW
Drain-source voltage: 1.2kV
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IXGT30N120B3D1 IXGT30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Case: TO268
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS IXYH30N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Power dissipation: 416W
Collector-emitter voltage: 1.2kV
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IXYP30N120C3 IXYP30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
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IXA33IF1200HB IXA33IF1200HB IXYS IXA33IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: Sonic FRD™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 110ns
Gate charge: 76nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
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LOC112S LOC112S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+218.42 грн
5+169.02 грн
25+152.12 грн
100+137.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP14N60PM IXTP14N60PM IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP230N04T4M IXTP230N04T4M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1365820&compId=IXTP230N04T4M.pdf?ci_sign=027a29a87a204a8cf3033295a7b62dd3a81d9d5b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXFP30N25X3 IXFP30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
1+443.78 грн
10+277.67 грн
50+272.04 грн
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IXFY30N25X3 IXFY30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
2+340.64 грн
5+279.28 грн
25+263.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXBN75N170A IXBN75N170A IXYS 98938.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+4590.39 грн
В кошику  од. на суму  грн.
IXyH100N65C3 IXyH100N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9FE9B182D9820&compId=IXYH100N65C3.pdf?ci_sign=69e3af69d2cb14ebc6509d3947bbc7d28a48c48b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
1+747.15 грн
5+642.27 грн
10+612.49 грн
30+597.20 грн
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IXFP4N100P IXFP4N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
2+253.10 грн
3+211.68 грн
10+186.73 грн
50+169.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI614CI IXDI614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 1266 шт:
термін постачання 21-30 дні (днів)
2+298.17 грн
3+262.38 грн
10+241.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN614CI IXDN614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 728 шт:
термін постачання 21-30 дні (днів)
2+338.90 грн
10+240.65 грн
25+236.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD614CI IXDD614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 785 шт:
термін постачання 21-30 дні (днів)
2+303.37 грн
10+226.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN609CI IXDN609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1061 шт:
термін постачання 21-30 дні (днів)
2+224.49 грн
10+157.75 грн
25+152.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN630MCI IXDN630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
1+494.06 грн
10+440.25 грн
В кошику  од. на суму  грн.
IXDI630MCI IXDI630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
1+665.68 грн
10+421.74 грн
50+401.62 грн
В кошику  од. на суму  грн.
DSEC120-12AK DSEC120-12AK IXYS Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+1274.14 грн
3+1073.67 грн
10+951.34 грн
В кошику  од. на суму  грн.
LCB710S LCB710S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A5000E274458BF&compId=lcb710.pdf?ci_sign=6afcc9f1a3caec493c4d282148d45c8cc634e4bc Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+572.06 грн
В кошику  од. на суму  грн.
DPG10I300PA DPG10I300PA IXYS DPG10I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
4+136.08 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH74N20P IXFH74N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5AEB5963298BF&compId=IXF(V%2CH)74N20P(S).pdf?ci_sign=0f089991e74ed191755334448918e2eb4cb172ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Reverse recovery time: 200ns
на замовлення 128 шт:
термін постачання 21-30 дні (днів)
1+490.59 грн
30+324.36 грн
В кошику  од. на суму  грн.
IXTP02N120P IXTP02N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
товару немає в наявності
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IXTY02N120P IXTY02N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
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IXGK320N60B3 IXGK320N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
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MMIX1G320N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FCA36BD8D820&compId=MMIX1G320N60B3.pdf?ci_sign=e89ac637af771fafceeee892fa2d83d851e397a1 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
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CPC1001NTR CPC1001NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5536A0C7&compId=CPC1001N.pdf?ci_sign=fed221f1ce6717152996c4670d54d917b333a1f1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
CTR@If: 100-800%@0.2mA
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XBB170 XBB170 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3A00C7&compId=XBB170.pdf?ci_sign=00fa93de2696ad932ea5cc4d0329771fb18f0a2c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+363.17 грн
10+294.58 грн
250+249.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1333GR CPC1333GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 231 шт:
термін постачання 21-30 дні (днів)
3+152.55 грн
10+111.87 грн
100+98.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLB171P PLB171P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7AE0C7&compId=PLB171.pdf?ci_sign=9fe800a18959fd9115c3f387e4c1692996f299da Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
1+442.05 грн
10+326.77 грн
50+297.80 грн
В кошику  од. на суму  грн.
IXTP102N15T IXTP102N15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
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DSEI30-12A DSEI30-12A IXYS pVersion=0046&contRep=ZT&docId=E2916DEC5E36DDF19A99005056AB752F&compId=92722.pdf?ci_sign=990727ced795f1f61d5fc4ad016abc029ccb1a31 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
2+395.24 грн
10+238.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MUBW25-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: motors
Technology: NPT
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
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IXTP12N50P IXTP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 294 шт:
термін постачання 21-30 дні (днів)
2+216.69 грн
3+180.29 грн
10+159.36 грн
50+144.07 грн
250+141.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA12N50P IXFA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
3+209.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP12N50P IXFP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
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IXTA12N50P IXTA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
товару немає в наявності
В кошику  од. на суму  грн.
IXFR26N100P IXFR26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BB9820&compId=IXFR26N100P.pdf?ci_sign=3b03500e95698d4c8c007286dc3266ee074c8df4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+3127.29 грн
3+2613.36 грн
10+2309.12 грн
В кошику  од. на суму  грн.
PS2601 PS2601 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3580C7&compId=PS2601.pdf?ci_sign=7e11c50a1503c9bb2c7b0e2e3fe9cdb52a6bc9e5 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
CPC1972GS CPC1972GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
CPC1972GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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IXFP38N30X3 IXFP38N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBADFCE7F4B8BF&compId=IXF_38N30X3.pdf?ci_sign=1109e99730c8ed475df2ed7e746e482190ba3431 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 240W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
2+310.30 грн
3+259.16 грн
10+229.38 грн
50+206.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP38N30X3M IXFP38N30X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB3F631E6D8BF&compId=IXFP38N30X3M.pdf?ci_sign=76d575cc16e861382b12e8f0daa79094585c8fd8 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220FP
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+302.50 грн
10+247.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYP8N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
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В кошику  од. на суму  грн.
IXYA8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYA8N90C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
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В кошику  од. на суму  грн.
IXFH18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89
IXFH18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFK220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFK220N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1289.75 грн
3+1055.97 грн
10+957.78 грн
В кошику  од. на суму  грн.
IXFT220N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT220N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
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В кошику  од. на суму  грн.
IXFH220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH220N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
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В кошику  од. на суму  грн.
MEA250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
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В кошику  од. на суму  грн.
XAA117S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+250.50 грн
50+152.92 грн
250+122.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+250.50 грн
50+152.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+250.50 грн
50+152.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XAA117PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
XAA117STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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IXGA30N120B3 IXGA(H,P)30N120B3.pdf
IXGA30N120B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Case: TO263
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXYH30N120C3 IXY_30N120C3.pdf
IXYH30N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
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IXFN30N120P IXFN30N120P.pdf
IXFN30N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±40V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Drain-source voltage: 1.2kV
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IXFB30N120P IXFB30N120P.pdf
IXFB30N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Power dissipation: 1.25kW
Drain-source voltage: 1.2kV
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IXGT30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGT30N120B3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Case: TO268
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
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IXYH30N120C3D1 IXYH30N120C3D1.pdf
IXYH30N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Power dissipation: 416W
Collector-emitter voltage: 1.2kV
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IXYP30N120C3 IXY_30N120C3.pdf
IXYP30N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
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IXA33IF1200HB IXA33IF1200HB.pdf
IXA33IF1200HB
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: Sonic FRD™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 110ns
Gate charge: 76nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
LOC112S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112S
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+218.42 грн
5+169.02 грн
25+152.12 грн
100+137.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP14N60PM pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e
IXTP14N60PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP230N04T4M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1365820&compId=IXTP230N04T4M.pdf?ci_sign=027a29a87a204a8cf3033295a7b62dd3a81d9d5b
IXTP230N04T4M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFP30N25X3 IXFA(P,Y)30N25X3.pdf
IXFP30N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+443.78 грн
10+277.67 грн
50+272.04 грн
В кошику  од. на суму  грн.
IXFY30N25X3 IXFA(P,Y)30N25X3.pdf
IXFY30N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+340.64 грн
5+279.28 грн
25+263.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXBN75N170A 98938.pdf
IXBN75N170A
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4590.39 грн
В кошику  од. на суму  грн.
IXyH100N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9FE9B182D9820&compId=IXYH100N65C3.pdf?ci_sign=69e3af69d2cb14ebc6509d3947bbc7d28a48c48b
IXyH100N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+747.15 грн
5+642.27 грн
10+612.49 грн
30+597.20 грн
В кошику  од. на суму  грн.
IXFP4N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c
IXFP4N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+253.10 грн
3+211.68 грн
10+186.73 грн
50+169.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDI614CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 1266 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+298.17 грн
3+262.38 грн
10+241.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 728 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+338.90 грн
10+240.65 грн
25+236.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 785 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+303.37 грн
10+226.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN609CI IXDD609CI.pdf
IXDN609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1061 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+224.49 грн
10+157.75 грн
25+152.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+494.06 грн
10+440.25 грн
В кошику  од. на суму  грн.
IXDI630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+665.68 грн
10+421.74 грн
50+401.62 грн
В кошику  од. на суму  грн.
DSEC120-12AK Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79
DSEC120-12AK
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1274.14 грн
3+1073.67 грн
10+951.34 грн
В кошику  од. на суму  грн.
LCB710S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A5000E274458BF&compId=lcb710.pdf?ci_sign=6afcc9f1a3caec493c4d282148d45c8cc634e4bc
LCB710S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+572.06 грн
В кошику  од. на суму  грн.
DPG10I300PA DPG10I300PA.pdf
DPG10I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+136.08 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFH74N20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5AEB5963298BF&compId=IXF(V%2CH)74N20P(S).pdf?ci_sign=0f089991e74ed191755334448918e2eb4cb172ba
IXFH74N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Reverse recovery time: 200ns
на замовлення 128 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+490.59 грн
30+324.36 грн
В кошику  од. на суму  грн.
IXTP02N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1
IXTP02N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
товару немає в наявності
В кошику  од. на суму  грн.
IXTY02N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1
IXTY02N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
товару немає в наявності
В кошику  од. на суму  грн.
IXGK320N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441
IXGK320N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1G320N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FCA36BD8D820&compId=MMIX1G320N60B3.pdf?ci_sign=e89ac637af771fafceeee892fa2d83d851e397a1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC1001NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5536A0C7&compId=CPC1001N.pdf?ci_sign=fed221f1ce6717152996c4670d54d917b333a1f1
CPC1001NTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
CTR@If: 100-800%@0.2mA
товару немає в наявності
В кошику  од. на суму  грн.
XBB170 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3A00C7&compId=XBB170.pdf?ci_sign=00fa93de2696ad932ea5cc4d0329771fb18f0a2c
XBB170
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+363.17 грн
10+294.58 грн
250+249.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1333GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
CPC1333GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 231 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+152.55 грн
10+111.87 грн
100+98.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLB171P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7AE0C7&compId=PLB171.pdf?ci_sign=9fe800a18959fd9115c3f387e4c1692996f299da
PLB171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+442.05 грн
10+326.77 грн
50+297.80 грн
В кошику  од. на суму  грн.
IXTP102N15T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392
IXTP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
товару немає в наявності
В кошику  од. на суму  грн.
DSEI30-12A pVersion=0046&contRep=ZT&docId=E2916DEC5E36DDF19A99005056AB752F&compId=92722.pdf?ci_sign=990727ced795f1f61d5fc4ad016abc029ccb1a31
DSEI30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 212 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+395.24 грн
10+238.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MUBW25-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: motors
Technology: NPT
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
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IXTP12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 294 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+216.69 грн
3+180.29 грн
10+159.36 грн
50+144.07 грн
250+141.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+209.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
товару немає в наявності
В кошику  од. на суму  грн.
IXFR26N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BB9820&compId=IXFR26N100P.pdf?ci_sign=3b03500e95698d4c8c007286dc3266ee074c8df4
IXFR26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3127.29 грн
3+2613.36 грн
10+2309.12 грн
В кошику  од. на суму  грн.
PS2601 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3580C7&compId=PS2601.pdf?ci_sign=7e11c50a1503c9bb2c7b0e2e3fe9cdb52a6bc9e5
PS2601
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1972GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
CPC1972GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1972GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AF084E0C7&compId=CPC1972.pdf?ci_sign=ad681fe35f2cbf4725519c25a38bae72b51c2f77
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXFP38N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBADFCE7F4B8BF&compId=IXF_38N30X3.pdf?ci_sign=1109e99730c8ed475df2ed7e746e482190ba3431 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFP38N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 240W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+310.30 грн
3+259.16 грн
10+229.38 грн
50+206.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP38N30X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB3F631E6D8BF&compId=IXFP38N30X3M.pdf?ci_sign=76d575cc16e861382b12e8f0daa79094585c8fd8 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFP38N30X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220FP
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+302.50 грн
10+247.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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