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MUBW15-12T7 IXYS MUBW15-12T7.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
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MUBW20-06A6K IXYS MUBW20-06A6K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW35-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW35-12A8 IXYS MUBW35-12A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW50-06A8 IXYS MUBW50-06A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
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MUBW50-12T8 IXYS MUBW50-12T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
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MUBW75-17T8 IXYS MUBW75-17T8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
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IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Power dissipation: 830W
Case: SOT227B
Pulsed drain current: 900A
Type of semiconductor module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 2.6mΩ
Reverse recovery time: 130ns
на замовлення 229 шт:
термін постачання 14-30 дні (днів)
1+1899.05 грн
2+1667.47 грн
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LF21844NTR LF21844NTR IXYS LF21844NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
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 Мінімальне замовлення: 2500 шт
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IXTA44P15T IXTA44P15T IXYS IXT_44P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
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FUO22-16N FUO22-16N IXYS FUO22-16N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
1+1272.74 грн
5+1090.14 грн
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FUO22-12N FUO22-12N IXYS FUO22-12N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.2V
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 30A
Case: ISOPLUS i4-pac™ x024a
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
1+1188.62 грн
3+1043.44 грн
25+1005.24 грн
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CPC1972GS CPC1972GS IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
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CPC1972GSTR IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
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 Мінімальне замовлення: 1000 шт
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IXTA300N04T2-7 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
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 Мінімальне замовлення: 300 шт
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IXTK100N25P IXTK100N25P IXYS IXTK100N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
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IXFA7N80P-TRL IXFA7N80P-TRL IXYS littelfuse-discrete-mosfets-ixf-7n80p-datasheet?assetguid=b00d4e8d-827b-4a04-b106-292ed53206ee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFP7N80PM IXFP7N80PM IXYS media?resourcetype=datasheets&itemid=37EF9B66-C3C4-4E98-858B-59EA1F7ACA5F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP7N80PM-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
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 Мінімальне замовлення: 300 шт
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IXKR47N60C5 IXKR47N60C5 IXYS IXKR47N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+1471.15 грн
2+1292.20 грн
3+1291.35 грн
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MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
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CPC5602CTR CPC5602CTR IXYS CPC5602.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
3+164.58 грн
10+91.69 грн
100+64.53 грн
Мінімальне замовлення: 3 шт
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IXDI609CI IXDI609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 755 шт:
термін постачання 14-30 дні (днів)
2+243.21 грн
10+169.80 грн
50+164.71 грн
Мінімальне замовлення: 2 шт
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IXDI609YI IXDI609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609PI IXDI609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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 Мінімальне замовлення: 1000 шт
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XBB170 XBB170 IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+702.20 грн
10+568.84 грн
250+478.85 грн
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XBB170P XBB170P IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
1+1009.42 грн
50+613.84 грн
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XBB170S XBB170S IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
1+1009.42 грн
50+613.84 грн
В кошику  од. на суму  грн.
XBB170PTR IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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 Мінімальне замовлення: 1000 шт
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XBB170STR IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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 Мінімальне замовлення: 1000 шт
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IXSG110N65L2K IXYS ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
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 Мінімальне замовлення: 2000 шт
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IXFK360N15T2 IXFK360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXFH160N15T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Application: automotive industry
Reverse recovery time: 90ns
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 Мінімальне замовлення: 300 шт
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IXFN360N15T2 IXFN360N15T2 IXYS IXFN360N15T2.pdf Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 715nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Pulsed drain current: 900A
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IXFX360N15T2 IXFX360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXTH160N15T IXYS littelfuse-discrete-mosfets-ixth160n15t-datasheet?assetguid=2e1c68df-3eb8-4840-9ed0-17898eef579d Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhancement
Reverse recovery time: 115ns
Application: automotive industry
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MMIX1H60N150V1 IXYS MMIX1H60N150V1.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; SMPD; SMD; 32kA
Case: SMPD
Mounting: SMD
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 32kA
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MMIX1F360N15T2 IXYS media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 235A
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Pulsed drain current: 900A
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IXGT32N120A3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
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IXGH32N120A3 IXGH32N120A3 IXYS IXGH(t)32N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
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IXGT32N120A3 IXGT32N120A3 IXYS IXGH(t)32N120A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38s
Gate-emitter voltage: ±20V
Collector current: 32A
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IXTY44N10T-TRL IXTY44N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-44n10t-datasheet?assetguid=6f632209-e987-45d8-bd19-71a9b1e1ecdc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: DPAK; TO252AA
Gate-source voltage: 30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 60ns
Application: automotive industry
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IXFT50N30Q3 IXFT50N30Q3 IXYS IXFH50N30Q3_IXFT50N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
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MMIX1F160N30T MMIX1F160N30T IXYS 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 440A
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+2534.51 грн
2+2225.27 грн
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MCC312-12io1 IXYS MCC312-12IO1.pdf LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Case: Y1-CU
Kind of package: bulk
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.32V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 320A x2
Max. load current: 520A
Semiconductor structure: double series
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+13396.70 грн
В кошику  од. на суму  грн.
IXXN340N65B4 IXYS Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Gate-emitter voltage: ±20V
Collector current: 520A
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 Мінімальне замовлення: 300 шт
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IXFX520N075T2 IXFX520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTP220N04T2 IXTP220N04T2 IXYS IXTA(P)220N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
2+367.56 грн
6+188.48 грн
15+178.29 грн
Мінімальне замовлення: 2 шт
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IXFX220N17T2 IXFX220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+949.07 грн
3+784.49 грн
10+710.63 грн
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DJ6025LCTP DJ6025LCTP IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Kind of package: tube
Case: TO220AB
Type of diode: rectifying
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IX4341UE IXYS ix4341-data-sheet?assetguid=17527a5d-0949-41d1-8027-a753e176f71e Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
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IX4341UETR IXYS ix4341-data-sheet?assetguid=17527a5d-0949-41d1-8027-a753e176f71e Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
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DSA1-16D DSA1-16D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
1+496.48 грн
5+381.21 грн
10+348.10 грн
50+283.57 грн
100+265.74 грн
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DAA200X1800NA DAA200X1800NA IXYS DAA200X1800NA.pdf Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.21V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Kind of package: tube
Features of semiconductor devices: avalanche breakdown effect
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
1+2711.89 грн
3+2435.83 грн
10+2271.12 грн
30+2211.69 грн
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IXTP20N65X2M IXTP20N65X2M IXYS IXTP20N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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IXTH420N04T2 IXTH420N04T2 IXYS IXTH420N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC2330NTR IXYS CPC2330N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Turn-on time: 3ms
Case: SO8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
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CPC1330GRTR IXYS CPC1330.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Insulation voltage: 5kV
Turn-on time: 2ms
Case: DIP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
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 Мінімальне замовлення: 1000 шт
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CPC1786J CPC1786J IXYS CPC1786.pdf Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Type of relay: solid state
Max. operating current: 0.8A
Switched voltage: max. 1kV DC
Mounting: THT
Case: i4-pac
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 2Ω
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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IXTY08N50D2-TRL IXTY08N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 800mA; 60W; DPAK; 400ns; module
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: depletion
Reverse recovery time: 400ns
Version: module
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MUBW15-12T7 MUBW15-12T7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
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MUBW20-06A6K MUBW20-06A6K.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
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MUBW35-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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MUBW35-12A8 MUBW35-12A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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MUBW50-06A8 MUBW50-06A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
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MUBW50-12T8 MUBW50-12T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
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MUBW75-17T8 MUBW75-17T8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
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IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Power dissipation: 830W
Case: SOT227B
Pulsed drain current: 900A
Type of semiconductor module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 2.6mΩ
Reverse recovery time: 130ns
на замовлення 229 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1899.05 грн
2+1667.47 грн
В кошику  од. на суму  грн.
LF21844NTR LF21844NTR.pdf
LF21844NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXTA44P15T IXT_44P15T.pdf
IXTA44P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
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FUO22-16N FUO22-16N.pdf
FUO22-16N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1272.74 грн
5+1090.14 грн
В кошику  од. на суму  грн.
FUO22-12N FUO22-12N.pdf
FUO22-12N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. forward impulse current: 150A
Max. forward voltage: 1.2V
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 30A
Case: ISOPLUS i4-pac™ x024a
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1188.62 грн
3+1043.44 грн
25+1005.24 грн
В кошику  од. на суму  грн.
CPC1972GS CPC1972.pdf
CPC1972GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
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CPC1972GSTR CPC1972.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IXTA300N04T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTK100N25P IXTK100N25P-DTE.pdf
IXTK100N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
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IXFA7N80P-TRL littelfuse-discrete-mosfets-ixf-7n80p-datasheet?assetguid=b00d4e8d-827b-4a04-b106-292ed53206ee
IXFA7N80P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP7N80PM media?resourcetype=datasheets&itemid=37EF9B66-C3C4-4E98-858B-59EA1F7ACA5F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFP7N80PM-Datasheet.PDF
IXFP7N80PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXKR47N60C5 IXKR47N60C5.pdf
IXKR47N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1471.15 грн
2+1292.20 грн
3+1291.35 грн
В кошику  од. на суму  грн.
MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
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CPC5602CTR CPC5602.pdf
CPC5602CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+164.58 грн
10+91.69 грн
100+64.53 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDI609CI IXDD609CI.pdf
IXDI609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 755 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+243.21 грн
10+169.80 грн
50+164.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDI609YI IXDD609CI.pdf
IXDI609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609PI IXDD609CI.pdf
IXDI609PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
XBB170 XBB170.pdf
XBB170
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+702.20 грн
10+568.84 грн
250+478.85 грн
В кошику  од. на суму  грн.
XBB170P XBB170.pdf
XBB170P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1009.42 грн
50+613.84 грн
В кошику  од. на суму  грн.
XBB170S XBB170.pdf
XBB170S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1009.42 грн
50+613.84 грн
В кошику  од. на суму  грн.
XBB170PTR XBB170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
XBB170STR XBB170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXSG110N65L2K ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXFK360N15T2 IXFK(X)360N15T2.pdf
IXFK360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXFH160N15T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH160N15T-Datasheet.PDF?assetguid=B9B32D06-6B37-4FB0-9F26-E704C46FA379
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
Application: automotive industry
Reverse recovery time: 90ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN360N15T2 IXFN360N15T2.pdf
IXFN360N15T2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 715nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Pulsed drain current: 900A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFX360N15T2 IXFK(X)360N15T2.pdf
IXFX360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 360A
Power dissipation: 1.67kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 715nC
Kind of package: tube
Reverse recovery time: 150ns
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IXTH160N15T littelfuse-discrete-mosfets-ixth160n15t-datasheet?assetguid=2e1c68df-3eb8-4840-9ed0-17898eef579d
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhancement
Reverse recovery time: 115ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MMIX1H60N150V1 MMIX1H60N150V1.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.5kV; SMPD; SMD; 32kA
Case: SMPD
Mounting: SMD
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: standard
Max. forward impulse current: 32kA
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MMIX1F360N15T2 media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 235A
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Pulsed drain current: 900A
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IXGT32N120A3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXGH32N120A3 IXGH(t)32N120A3.pdf
IXGH32N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
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IXGT32N120A3 IXGH(t)32N120A3.pdf
IXGT32N120A3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38s
Gate-emitter voltage: ±20V
Collector current: 32A
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IXTY44N10T-TRL littelfuse-discrete-mosfets-ixt-44n10t-datasheet?assetguid=6f632209-e987-45d8-bd19-71a9b1e1ecdc
IXTY44N10T-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: DPAK; TO252AA
Gate-source voltage: 30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 60ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXFT50N30Q3 IXFH50N30Q3_IXFT50N30Q3.pdf
IXFT50N30Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
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MMIX1F160N30T 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf
MMIX1F160N30T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 440A
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2534.51 грн
2+2225.27 грн
В кошику  од. на суму  грн.
MCC312-12io1 MCC312-12IO1.pdf LFPCN250210_Y1-screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Case: Y1-CU
Kind of package: bulk
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.32V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 320A x2
Max. load current: 520A
Semiconductor structure: double series
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+13396.70 грн
В кошику  од. на суму  грн.
IXXN340N65B4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Gate-emitter voltage: ±20V
Collector current: 520A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFX520N075T2 IXFK(X)520N075T2.pdf
IXFX520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTP220N04T2 IXTA(P)220N04T2.pdf
IXTP220N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+367.56 грн
6+188.48 грн
15+178.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFX220N17T2 IXFK(X)220N17T2.pdf
IXFX220N17T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+949.07 грн
3+784.49 грн
10+710.63 грн
В кошику  од. на суму  грн.
DJ6025LCTP
DJ6025LCTP
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Kind of package: tube
Case: TO220AB
Type of diode: rectifying
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IX4341UE ix4341-data-sheet?assetguid=17527a5d-0949-41d1-8027-a753e176f71e
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IX4341UETR ix4341-data-sheet?assetguid=17527a5d-0949-41d1-8027-a753e176f71e
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
DSA1-16D DSA1-18D.pdf
DSA1-16D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+496.48 грн
5+381.21 грн
10+348.10 грн
50+283.57 грн
100+265.74 грн
В кошику  од. на суму  грн.
DAA200X1800NA DAA200X1800NA.pdf
DAA200X1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.21V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Kind of package: tube
Features of semiconductor devices: avalanche breakdown effect
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2711.89 грн
3+2435.83 грн
10+2271.12 грн
30+2211.69 грн
В кошику  од. на суму  грн.
IXTP20N65X2M IXTP20N65X2M.pdf
IXTP20N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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IXTH420N04T2 IXTH420N04T2.pdf
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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CPC1150NTR CPC1150N.pdf
CPC1150NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CPC2330NTR CPC2330N.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Turn-on time: 3ms
Case: SO8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CPC1330GRTR CPC1330.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Insulation voltage: 5kV
Turn-on time: 2ms
Case: DIP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1786J CPC1786.pdf
CPC1786J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Type of relay: solid state
Max. operating current: 0.8A
Switched voltage: max. 1kV DC
Mounting: THT
Case: i4-pac
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 2Ω
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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IXTY08N50D2-TRL littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329
IXTY08N50D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 800mA; 60W; DPAK; 400ns; module
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: depletion
Reverse recovery time: 400ns
Version: module
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.