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IXTF02N450 IXTF02N450 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9172B820&compId=IXTF02N450.pdf?ci_sign=892f85121908800af19c6a6b8b7ea87700a30990 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
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DSEP30-12B DSEP30-12B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
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MCC312-16io1 MCC312-16io1 IXYS Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTH02N250 IXTH02N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Mounting: THT
Reverse recovery time: 1.5µs
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 450Ω
Drain current: 0.2A
Power dissipation: 83W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
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VUO86-16NO7 VUO86-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7C6A4B9FAE469&compId=VUO86-16NO7.pdf?ci_sign=a88f7f008cedc2c13da3d6b2ce3fe715a9f7945d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 429 шт:
термін постачання 21-30 дні (днів)
1+1251.16 грн
5+953.67 грн
10+846.02 грн
25+816.52 грн
В кошику  од. на суму  грн.
IXFL32N120P IXFL32N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 360nC
On-state resistance: 0.34Ω
Drain current: 24A
Power dissipation: 520W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1800.74 грн
В кошику  од. на суму  грн.
IXFT16N120P IXFT16N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
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VBO25-12NO2 VBO25-12NO2 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B14FB4DB5AE0C7&compId=VBO25_ser.pdf?ci_sign=901c93b9e710bb3b35cf523526fb1ef18c73cc62 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1531.10 грн
5+1264.65 грн
В кошику  од. на суму  грн.
DSP25-12AT-TUB DSP25-12AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+521.24 грн
3+436.17 грн
10+385.14 грн
30+352.44 грн
В кошику  од. на суму  грн.
IXTP80N075L2 IXTP80N075L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 172 шт:
термін постачання 21-30 дні (днів)
1+482.60 грн
5+389.12 грн
10+350.85 грн
50+339.69 грн
В кошику  од. на суму  грн.
IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Mounting: SMD
Kind of output: non-inverting
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)
4+108.20 грн
10+61.32 грн
25+51.75 грн
100+40.59 грн
300+34.13 грн
500+31.66 грн
1000+29.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTT500N04T2 IXTT500N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4EC341BB65820&compId=IXTH(T)500N04T2.pdf?ci_sign=fb6c11af8f98e6c971678d0a7c1e31c1713e7404 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
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IX4426N IX4426N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1130 шт:
термін постачання 21-30 дні (днів)
6+83.30 грн
10+55.02 грн
23+42.26 грн
61+39.87 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4426MTR IX4426MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
6+75.57 грн
10+50.24 грн
20+49.44 грн
25+45.45 грн
50+44.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
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IX9907N IX9907N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
13+33.49 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IX9908N IX9908N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
9+49.81 грн
10+41.46 грн
25+36.68 грн
100+32.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CPC1966B CPC1966B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
2+343.49 грн
4+255.16 грн
10+240.81 грн
25+236.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1961G CPC1961G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81A00C7&compId=CPC1961.pdf?ci_sign=8a6330b4874c9f3ab50e4bf711f14beab8a555df Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
2+216.40 грн
9+114.82 грн
23+108.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1943G CPC1943G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
1+553.02 грн
3+342.88 грн
8+324.54 грн
50+314.17 грн
100+311.78 грн
В кошику  од. на суму  грн.
CPC1943GS CPC1943GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+467.14 грн
3+342.88 грн
В кошику  од. на суму  грн.
CPC1916Y CPC1916Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4D709785518BF&compId=CPC1916.pdf?ci_sign=9583ecfd8a4e7c236662a12baf386e32aa0b9f6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 2.5A
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.34Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+824.37 грн
3+354.84 грн
8+335.70 грн
В кошику  од. на суму  грн.
CPC1967J CPC1967J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
1+1130.08 грн
25+1013.47 грн
В кошику  од. на суму  грн.
IXTQ460P2 IXTQ460P2 IXYS IXTQ460P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar2™
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
2+401.02 грн
10+269.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP260N055T2 IXTP260N055T2 IXYS IXTA(P)260N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
2+383.85 грн
3+334.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK32P60P IXTK32P60P IXYS IXTK32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Kind of package: tube
Case: TO264
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
1+1256.31 грн
10+1070.89 грн
В кошику  од. на суму  грн.
IXTT16P60P IXTT16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
1+964.34 грн
10+633.92 грн
30+628.34 грн
В кошику  од. на суму  грн.
IXTN600N04T2 IXTN600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4 Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 1.8kA
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.3mΩ
Power dissipation: 940W
Gate-source voltage: ±30V
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IXTX60N50L2 IXTX60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Drain-source voltage: 500V
Drain current: 60A
Gate charge: 610nC
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
Kind of channel: enhancement
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IXTK600N04T2 IXTK600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
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IXTQ60N20L2 IXTQ60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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В кошику  од. на суму  грн.
IXTT60N20L2 IXTT60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTX600N04T2 IXTX600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
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В кошику  од. на суму  грн.
IXTP460P2 IXTP460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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В кошику  од. на суму  грн.
IXTA260N055T2 IXTA260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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IXTA260N055T2-7 IXTA260N055T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC815820&compId=IXTA260N055T2-7.pdf?ci_sign=20af502dc1bd984d39825892a1d6786d67df0a27 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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IXTA460P2 IXTA460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO263
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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MCC26-12io8B MCC26-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 0.44kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1633.29 грн
2+1433.70 грн
В кошику  од. на суму  грн.
MCC95-18io1B MCC95-18io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D66AD9C64BE27&compId=MCC95-18IO1B-DTE.pdf?ci_sign=76aa368a76aabe9775dd10afb8da54ce46bf6113 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2685.22 грн
В кошику  од. на суму  грн.
IXGH72N60C3 IXGH72N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA8AE8E972D820&compId=IXGH72N60C3.pdf?ci_sign=e7439d07a94ee0168475277f41a96e4f84faad59 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 62ns
Turn-off time: 244ns
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
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CS20-22MOF1 CS20-22MOF1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDD65D23F377CA18&compId=CS20-22moF1.pdf?ci_sign=b0af0cfe7ddc5a60264d816efdb90ab3d73413df Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Gate current: 250mA
Load current: 18A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
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DSDI60-16A DSDI60-16A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
1+852.71 грн
2+712.06 грн
4+673.79 грн
5+672.99 грн
10+657.84 грн
В кошику  од. на суму  грн.
IXFB210N20P IXFB210N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Drain-source voltage: 200V
Drain current: 210A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
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LDA201 LDA201 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ABDD895F701EC&compId=LDA201.pdf?ci_sign=ea9bc7977b0278912611a4bb6621e7b18e8942eb Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Collector-emitter voltage: 30V
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
14+30.91 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
IXTH04N300P3HV IXTH04N300P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247HV
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 13nC
Reverse recovery time: 1.1µs
Drain current: 0.4A
Power dissipation: 104W
On-state resistance: 190Ω
Drain-source voltage: 3kV
Kind of package: tube
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IXTQ52P10P IXTQ52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO3P
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 193 шт:
термін постачання 21-30 дні (днів)
1+521.24 грн
3+333.31 грн
8+314.97 грн
120+310.98 грн
В кошику  од. на суму  грн.
IXTA52P10P IXTA52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+555.59 грн
3+333.31 грн
8+314.97 грн
50+303.01 грн
В кошику  од. на суму  грн.
IXTH52P10P IXTH52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO247-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
1+628.58 грн
3+376.37 грн
7+355.63 грн
120+345.27 грн
В кошику  од. на суму  грн.
IXTK170P10P IXTK170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794BF4713B18748&compId=IXTK170P10P.pdf?ci_sign=f70b69b80f9b410a7c33f367002501ddeb7e430b Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: TO264
Kind of channel: enhancement
Type of transistor: P-MOSFET
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IXTT90P10P IXTT90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 462W
Case: TO268
Kind of channel: enhancement
Type of transistor: P-MOSFET
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В кошику  од. на суму  грн.
IXTN170P10P IXTN170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A3DD0CC20748&compId=IXTN170P10P.pdf?ci_sign=836eb5a6f8f0b2903a734fc7c94f64d2235ce61f Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -510A
Drain current: -170A
Drain-source voltage: -100V
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Power dissipation: 890W
Gate-source voltage: ±30V
Technology: PolarP™
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
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IXTP52P10P IXTP52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTR170P10P IXTR170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA056E66DE518BF&compId=IXTR170P10P.pdf?ci_sign=d1b7e100a10ee5eb6bd8252f488ba0934cedb550 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -100A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 15.4mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 312W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTR90P10P IXTR90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA06CD750E378BF&compId=IXTR90P10P.pdf?ci_sign=d99e0f8c856a9cad4c5296bc1863b57210e9c675 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -57A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 27mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 190W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTX170P10P IXTX170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA046B882FB78BF&compId=IXTX170P10P.pdf?ci_sign=94cd33348f2095bd4b19ade6fc8944ee1e626f80 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
MDD26-14N1B MDD26-14N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E035B7BAA55E28&compId=MDD26-14N1B-DTE.pdf?ci_sign=73f19312f31197fce47f8065185a9389bf591bc4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+1559.44 грн
2+1369.11 грн
В кошику  од. на суму  грн.
MDD26-16N1B MDD26-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25D3853BA55EA&compId=MDD26-16N1B.pdf?ci_sign=e20b9a9d35d6193d30eaf696fc93a921c9ea7b87 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+1627.28 грн
2+1428.91 грн
5+1428.11 грн
В кошику  од. на суму  грн.
MDD255-12N1 MDD255-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0130FD95C5E28&compId=MDD255-xxN1-DTE.pdf?ci_sign=f51e90d71cc41ee788c961880317ff1f84e4c330 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 270A x2
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
MDD255-20N1 MDD255-20N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
товару немає в наявності
В кошику  од. на суму  грн.
MDD255-16N1 MDD255-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
товару немає в наявності
В кошику  од. на суму  грн.
IXTF02N450 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9172B820&compId=IXTF02N450.pdf?ci_sign=892f85121908800af19c6a6b8b7ea87700a30990
IXTF02N450
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товару немає в наявності
В кошику  од. на суму  грн.
DSEP30-12B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49
DSEP30-12B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
MCC312-16io1 Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a
MCC312-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTH02N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c
IXTH02N250
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Mounting: THT
Reverse recovery time: 1.5µs
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 450Ω
Drain current: 0.2A
Power dissipation: 83W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
VUO86-16NO7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7C6A4B9FAE469&compId=VUO86-16NO7.pdf?ci_sign=a88f7f008cedc2c13da3d6b2ce3fe715a9f7945d
VUO86-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 429 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1251.16 грн
5+953.67 грн
10+846.02 грн
25+816.52 грн
В кошику  од. на суму  грн.
IXFL32N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd
IXFL32N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 360nC
On-state resistance: 0.34Ω
Drain current: 24A
Power dissipation: 520W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1800.74 грн
В кошику  од. на суму  грн.
IXFT16N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa
IXFT16N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
VBO25-12NO2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B14FB4DB5AE0C7&compId=VBO25_ser.pdf?ci_sign=901c93b9e710bb3b35cf523526fb1ef18c73cc62
VBO25-12NO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1531.10 грн
5+1264.65 грн
В кошику  од. на суму  грн.
DSP25-12AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e
DSP25-12AT-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+521.24 грн
3+436.17 грн
10+385.14 грн
30+352.44 грн
В кошику  од. на суму  грн.
IXTP80N075L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889
IXTP80N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 172 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+482.60 грн
5+389.12 грн
10+350.85 грн
50+339.69 грн
В кошику  од. на суму  грн.
IX4310N
IX4310N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Mounting: SMD
Kind of output: non-inverting
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.20 грн
10+61.32 грн
25+51.75 грн
100+40.59 грн
300+34.13 грн
500+31.66 грн
1000+29.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTT500N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4EC341BB65820&compId=IXTH(T)500N04T2.pdf?ci_sign=fb6c11af8f98e6c971678d0a7c1e31c1713e7404
IXTT500N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IX4426N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1130 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+83.30 грн
10+55.02 грн
23+42.26 грн
61+39.87 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4426MTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+75.57 грн
10+50.24 грн
20+49.44 грн
25+45.45 грн
50+44.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
В кошику  од. на суму  грн.
IX9907N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.49 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IX9908N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd
IX9908N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.81 грн
10+41.46 грн
25+36.68 грн
100+32.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CPC1966B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85
CPC1966B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+343.49 грн
4+255.16 грн
10+240.81 грн
25+236.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1961G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81A00C7&compId=CPC1961.pdf?ci_sign=8a6330b4874c9f3ab50e4bf711f14beab8a555df
CPC1961G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+216.40 грн
9+114.82 грн
23+108.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1943G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+553.02 грн
3+342.88 грн
8+324.54 грн
50+314.17 грн
100+311.78 грн
В кошику  од. на суму  грн.
CPC1943GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+467.14 грн
3+342.88 грн
В кошику  од. на суму  грн.
CPC1916Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4D709785518BF&compId=CPC1916.pdf?ci_sign=9583ecfd8a4e7c236662a12baf386e32aa0b9f6b
CPC1916Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 2.5A
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.34Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+824.37 грн
3+354.84 грн
8+335.70 грн
В кошику  од. на суму  грн.
CPC1967J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354
CPC1967J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1130.08 грн
25+1013.47 грн
В кошику  од. на суму  грн.
IXTQ460P2 IXTQ460P2.pdf
IXTQ460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar2™
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+401.02 грн
10+269.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP260N055T2 IXTA(P)260N055T2.pdf
IXTP260N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+383.85 грн
3+334.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK32P60P IXTK32P60P.pdf
IXTK32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Kind of package: tube
Case: TO264
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1256.31 грн
10+1070.89 грн
В кошику  од. на суму  грн.
IXTT16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTT16P60P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+964.34 грн
10+633.92 грн
30+628.34 грн
В кошику  од. на суму  грн.
IXTN600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4
IXTN600N04T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 1.8kA
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.3mΩ
Power dissipation: 940W
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
IXTX60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9
IXTX60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Drain-source voltage: 500V
Drain current: 60A
Gate charge: 610nC
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTK600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTK600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTQ60N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTT60N20L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTX600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTX600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
товару немає в наявності
В кошику  од. на суму  грн.
IXTP460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTP460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1
IXTA260N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXTA260N055T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC815820&compId=IXTA260N055T2-7.pdf?ci_sign=20af502dc1bd984d39825892a1d6786d67df0a27
IXTA260N055T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTA460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTA460P2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO263
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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MCC26-12io8B pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-12io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 0.44kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1633.29 грн
2+1433.70 грн
В кошику  од. на суму  грн.
MCC95-18io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D66AD9C64BE27&compId=MCC95-18IO1B-DTE.pdf?ci_sign=76aa368a76aabe9775dd10afb8da54ce46bf6113 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC95-18io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2685.22 грн
В кошику  од. на суму  грн.
IXGH72N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA8AE8E972D820&compId=IXGH72N60C3.pdf?ci_sign=e7439d07a94ee0168475277f41a96e4f84faad59
IXGH72N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 62ns
Turn-off time: 244ns
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
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CS20-22MOF1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDD65D23F377CA18&compId=CS20-22moF1.pdf?ci_sign=b0af0cfe7ddc5a60264d816efdb90ab3d73413df
CS20-22MOF1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Gate current: 250mA
Load current: 18A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
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DSDI60-16A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433
DSDI60-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+852.71 грн
2+712.06 грн
4+673.79 грн
5+672.99 грн
10+657.84 грн
В кошику  од. на суму  грн.
IXFB210N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178
IXFB210N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Drain-source voltage: 200V
Drain current: 210A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
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LDA201 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ABDD895F701EC&compId=LDA201.pdf?ci_sign=ea9bc7977b0278912611a4bb6621e7b18e8942eb
LDA201
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Collector-emitter voltage: 30V
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.91 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
IXTH04N300P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac
IXTH04N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247HV
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 13nC
Reverse recovery time: 1.1µs
Drain current: 0.4A
Power dissipation: 104W
On-state resistance: 190Ω
Drain-source voltage: 3kV
Kind of package: tube
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IXTQ52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTQ52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO3P
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 193 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+521.24 грн
3+333.31 грн
8+314.97 грн
120+310.98 грн
В кошику  од. на суму  грн.
IXTA52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTA52P10P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+555.59 грн
3+333.31 грн
8+314.97 грн
50+303.01 грн
В кошику  од. на суму  грн.
IXTH52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTH52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO247-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+628.58 грн
3+376.37 грн
7+355.63 грн
120+345.27 грн
В кошику  од. на суму  грн.
IXTK170P10P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794BF4713B18748&compId=IXTK170P10P.pdf?ci_sign=f70b69b80f9b410a7c33f367002501ddeb7e430b
IXTK170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: TO264
Kind of channel: enhancement
Type of transistor: P-MOSFET
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IXTT90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108
IXTT90P10P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 462W
Case: TO268
Kind of channel: enhancement
Type of transistor: P-MOSFET
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IXTN170P10P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A3DD0CC20748&compId=IXTN170P10P.pdf?ci_sign=836eb5a6f8f0b2903a734fc7c94f64d2235ce61f
IXTN170P10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -510A
Drain current: -170A
Drain-source voltage: -100V
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Power dissipation: 890W
Gate-source voltage: ±30V
Technology: PolarP™
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
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IXTP52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTP52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
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IXTR170P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA056E66DE518BF&compId=IXTR170P10P.pdf?ci_sign=d1b7e100a10ee5eb6bd8252f488ba0934cedb550
IXTR170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -100A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 15.4mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 312W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
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IXTR90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA06CD750E378BF&compId=IXTR90P10P.pdf?ci_sign=d99e0f8c856a9cad4c5296bc1863b57210e9c675
IXTR90P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -57A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 27mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 190W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
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IXTX170P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA046B882FB78BF&compId=IXTX170P10P.pdf?ci_sign=94cd33348f2095bd4b19ade6fc8944ee1e626f80
IXTX170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
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MDD26-14N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E035B7BAA55E28&compId=MDD26-14N1B-DTE.pdf?ci_sign=73f19312f31197fce47f8065185a9389bf591bc4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD26-14N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1559.44 грн
2+1369.11 грн
В кошику  од. на суму  грн.
MDD26-16N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25D3853BA55EA&compId=MDD26-16N1B.pdf?ci_sign=e20b9a9d35d6193d30eaf696fc93a921c9ea7b87 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD26-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1627.28 грн
2+1428.91 грн
5+1428.11 грн
В кошику  од. на суму  грн.
MDD255-12N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0130FD95C5E28&compId=MDD255-xxN1-DTE.pdf?ci_sign=f51e90d71cc41ee788c961880317ff1f84e4c330 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b
MDD255-12N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 270A x2
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
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MDD255-20N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b
MDD255-20N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
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MDD255-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b
MDD255-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
товару немає в наявності
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