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IXTY44N10T-TRL IXTY44N10T-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 130W
Gate charge: 33nC
Technology: Trench
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 30mΩ
Reverse recovery time: 60ns
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXFT50N30Q3 IXFT50N30Q3 IXYS IXFH50N30Q3_IXFT50N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
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MMIX1F160N30T MMIX1F160N30T IXYS 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+3471.48 грн
3+2851.05 грн
10+2559.85 грн
20+2390.55 грн
В кошику  од. на суму  грн.
MCC312-12io1 IXYS MCC312-12IO1.pdf LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Case: Y1-CU
Kind of package: bulk
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.32V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 320A x2
Max. load current: 520A
Semiconductor structure: double series
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+13357.17 грн
В кошику  од. на суму  грн.
IXXN340N65B4 IXYS Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Gate-emitter voltage: ±20V
Collector current: 520A
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFX520N075T2 IXFX520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTP220N04T2 IXTP220N04T2 IXYS IXTA(P)220N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
2+322.72 грн
10+171.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFX220N17T2 IXFX220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+946.27 грн
3+782.18 грн
10+708.53 грн
В кошику  од. на суму  грн.
DJ6025LCTP DJ6025LCTP IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Kind of package: tube
Case: TO220AB
Type of diode: rectifying
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IX4341UE IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IX4341UETR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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DSA1-16D DSA1-16D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
1+495.01 грн
5+380.08 грн
10+347.07 грн
50+282.73 грн
100+264.96 грн
В кошику  од. на суму  грн.
DAA200X1800NA DAA200X1800NA IXYS DAA200X1800NA.pdf Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Max. off-state voltage: 1.8kV
Load current: 100A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.21V
Max. load current: 200A
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
1+2703.89 грн
3+2428.64 грн
10+2264.42 грн
30+2205.16 грн
В кошику  од. на суму  грн.
IXTP20N65X2M IXTP20N65X2M IXYS IXTP20N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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IXTH420N04T2 IXTH420N04T2 IXYS IXTH420N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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CPC2330NTR IXYS CPC2330N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Turn-on time: 3ms
Case: SO8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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CPC1330GRTR IXYS CPC1330.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Insulation voltage: 5kV
Turn-on time: 2ms
Case: DIP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1786J CPC1786J IXYS CPC1786.pdf Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 1kV DC
Case: i4-pac
Max. operating current: 0.8A
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IXTY08N50D2-TRL IXTY08N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 800mA; 60W; DPAK; 400ns; module
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Version: module
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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MDD142-16N1 MDD142-16N1 IXYS MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Max. forward impulse current: 4kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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DSS60-0045B DSS60-0045B IXYS DSS60-0045B.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Max. forward voltage: 0.57V
Power dissipation: 155W
Max. off-state voltage: 45V
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: Schottky rectifying
Max. forward impulse current: 0.6kA
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH8N250CHV IXYH8N250CHV IXYS IXY_8N250CHV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXYA8N250CHV IXYA8N250CHV IXYS IXY_8N250CHV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263
Case: TO263
Mounting: SMD
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXYH8N250C IXYS DS100789A(IXYH8N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
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IXYH8N250CV1HV IXYH8N250CV1HV IXYS IXYH8N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXTH58N25L2 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns
Case: TO247-3
Mounting: THT
Power dissipation: 540W
Drain current: 58A
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 64mΩ
Reverse recovery time: 400ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
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IXTA34N65X2-TRL IXTA34N65X2-TRL IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTT34N65X2HV IXTT34N65X2HV IXYS IXTT34N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXXK110N65B4H1 IXXK110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
Turn-on time: 65ns
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
1+1811.40 грн
3+1570.28 грн
5+1489.01 грн
10+1362.88 грн
25+1201.20 грн
50+1109.78 грн
В кошику  од. на суму  грн.
IXYP10N65C3 IXYP10N65C3 IXYS IXYP10N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Turn-off time: 128ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Gate charge: 18nC
Pulsed collector current: 54A
Turn-on time: 44ns
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 70A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 490A
Turn-on time: 65ns
товару немає в наявності
В кошику  од. на суму  грн.
IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXXH110N65B4 IXYS littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
Turn-on time: 65ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP6N100D2 IXTP6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
1+779.44 грн
5+587.48 грн
10+529.07 грн
50+446.11 грн
В кошику  од. на суму  грн.
IXTH6N100D2 IXTH6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA6N100D2HV IXTA6N100D2HV IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf?assetguid=d5edabee-7480-4970-a92b-1b6b944040ed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 6A; 300W; D2PAK,TO263AB; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA6N100D2 IXTA6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA6N100D2-TRL IXTA6N100D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 800mA; 300W; D2PAK,TO263; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFH6N100F IXYS DS98732A(IXFH-FT6N100F).pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 6A; 180W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH26N100X IXYS littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK26N100P IXFK26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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В кошику  од. на суму  грн.
IXFN36N100 IXFN36N100 IXYS IXFN36N100.pdf description Category: Transistor modules
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Semiconductor structure: single transistor
Pulsed drain current: 144A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXFT26N100XHV IXYS littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 26A; 860W; D3PAK,TO268; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFX26N100P IXFX26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTA1R6N100D2-TRL IXTA1R6N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; 100W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Reverse recovery time: 970ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTY1R6N100D2-TRL IXTY1R6N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXFP7N100P IXFP7N100P IXYS IXF_7N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
1+516.89 грн
10+334.37 грн
В кошику  од. на суму  грн.
IXFA7N100P IXFA7N100P IXYS IXF_7N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
1+594.38 грн
5+441.03 грн
10+374.16 грн
25+302.20 грн
30+292.89 грн
50+275.12 грн
В кошику  од. на суму  грн.
IXFH7N100P IXFH7N100P IXYS IXF_7N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA7N100P-TRL IXFA7N100P-TRL IXYS littelfuse-discrete-mosfets-ixf-7n100p-datasheet?assetguid=2a6e65f4-034a-4ea8-af00-941e933d8061 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 7A; 300W; D2PAK,TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGH72N60A3 IXGH72N60A3 IXYS IXG_72N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGH48N60A3 IXGH48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGP48N60A3 IXGP48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGP36N60A3 IXGP36N60A3 IXYS IXGA(P,H)36N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXGA36N60A3-TRL IXGA36N60A3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTY44N10T-TRL
IXTY44N10T-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 130W
Gate charge: 33nC
Technology: Trench
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 30mΩ
Reverse recovery time: 60ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXFT50N30Q3 IXFH50N30Q3_IXFT50N30Q3.pdf
IXFT50N30Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1F160N30T 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf
MMIX1F160N30T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3471.48 грн
3+2851.05 грн
10+2559.85 грн
20+2390.55 грн
В кошику  од. на суму  грн.
MCC312-12io1 MCC312-12IO1.pdf LFPCN250210_Y1-screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Case: Y1-CU
Kind of package: bulk
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.32V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 320A x2
Max. load current: 520A
Semiconductor structure: double series
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+13357.17 грн
В кошику  од. на суму  грн.
IXXN340N65B4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Gate-emitter voltage: ±20V
Collector current: 520A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFX520N075T2 IXFK(X)520N075T2.pdf
IXFX520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTP220N04T2 IXTA(P)220N04T2.pdf
IXTP220N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+322.72 грн
10+171.00 грн
Мінімальне замовлення: 2 шт
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IXFX220N17T2 IXFK(X)220N17T2.pdf
IXFX220N17T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+946.27 грн
3+782.18 грн
10+708.53 грн
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DJ6025LCTP
DJ6025LCTP
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Kind of package: tube
Case: TO220AB
Type of diode: rectifying
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IX4341UE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
товару немає в наявності
Мінімальне замовлення: 2000 шт
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IX4341UETR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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DSA1-16D DSA1-18D.pdf
DSA1-16D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+495.01 грн
5+380.08 грн
10+347.07 грн
50+282.73 грн
100+264.96 грн
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DAA200X1800NA DAA200X1800NA.pdf
DAA200X1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Max. off-state voltage: 1.8kV
Load current: 100A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.21V
Max. load current: 200A
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2703.89 грн
3+2428.64 грн
10+2264.42 грн
30+2205.16 грн
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IXTP20N65X2M IXTP20N65X2M.pdf
IXTP20N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
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IXTH420N04T2 IXTH420N04T2.pdf
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1150NTR CPC1150N.pdf
CPC1150NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
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CPC2330NTR CPC2330N.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Turn-on time: 3ms
Case: SO8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
товару немає в наявності
Мінімальне замовлення: 2000 шт
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CPC1330GRTR CPC1330.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Insulation voltage: 5kV
Turn-on time: 2ms
Case: DIP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1786J CPC1786.pdf
CPC1786J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 1kV DC
Case: i4-pac
Max. operating current: 0.8A
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IXTY08N50D2-TRL littelfuse-discrete-mosfets-ixt-08n50-datasheet?assetguid=a427d242-a59c-4809-ae1d-1e1f10e2a329
IXTY08N50D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 800mA; 60W; DPAK; 400ns; module
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Version: module
товару немає в наявності
Мінімальне замовлення: 2500 шт
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MDD142-16N1 MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MDD142-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Max. forward impulse current: 4kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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DSS60-0045B description DSS60-0045B.pdf
DSS60-0045B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Max. forward voltage: 0.57V
Power dissipation: 155W
Max. off-state voltage: 45V
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: Schottky rectifying
Max. forward impulse current: 0.6kA
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYH8N250CHV IXY_8N250CHV.pdf
IXYH8N250CHV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXYA8N250CHV IXY_8N250CHV.pdf
IXYA8N250CHV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263
Case: TO263
Mounting: SMD
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXYH8N250C DS100789A(IXYH8N250C)_.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
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IXYH8N250CV1HV IXYH8N250CV1HV.pdf
IXYH8N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
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IXTH58N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns
Case: TO247-3
Mounting: THT
Power dissipation: 540W
Drain current: 58A
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 64mΩ
Reverse recovery time: 400ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
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IXTA34N65X2-TRL littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTA34N65X2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTT34N65X2HV IXTT34N65X2HV.pdf
IXTT34N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXXK110N65B4H1 IXX_110N65B4H1.pdf
IXXK110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
Turn-on time: 65ns
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1811.40 грн
3+1570.28 грн
5+1489.01 грн
10+1362.88 грн
25+1201.20 грн
50+1109.78 грн
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IXYP10N65C3 IXYP10N65C3.pdf
IXYP10N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Turn-off time: 128ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Gate charge: 18nC
Pulsed collector current: 54A
Turn-on time: 44ns
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IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
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IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 70A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 490A
Turn-on time: 65ns
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IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXXH110N65B4 littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
Turn-on time: 65ns
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IXTP6N100D2 IXTA(H,P)6N100D2.pdf
IXTP6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+779.44 грн
5+587.48 грн
10+529.07 грн
50+446.11 грн
В кошику  од. на суму  грн.
IXTH6N100D2 IXTA(H,P)6N100D2.pdf
IXTH6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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Мінімальне замовлення: 300 шт
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IXTA6N100D2HV littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf?assetguid=d5edabee-7480-4970-a92b-1b6b944040ed
IXTA6N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 6A; 300W; D2PAK,TO263AB; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTA6N100D2 IXTA(H,P)6N100D2.pdf
IXTA6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXTA6N100D2-TRL littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTA6N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 800mA; 300W; D2PAK,TO263; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFH6N100F DS98732A(IXFH-FT6N100F).pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 6A; 180W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFH26N100X littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK26N100P IXFK26N100P_IXFX26N100P.pdf
IXFK26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFN36N100 description IXFN36N100.pdf
IXFN36N100
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Semiconductor structure: single transistor
Pulsed drain current: 144A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXFT26N100XHV littelfuse-discrete-mosfets-ixf-26n100x-datasheet?assetguid=dfa4119b-8089-448d-9ee5-2a71897c79bd
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 26A; 860W; D3PAK,TO268; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFX26N100P IXFK26N100P_IXFX26N100P.pdf
IXFX26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
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IXTA1R6N100D2-TRL
IXTA1R6N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; 100W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Reverse recovery time: 970ns
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTY1R6N100D2-TRL
IXTY1R6N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXFP7N100P IXF_7N100P.pdf
IXFP7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+516.89 грн
10+334.37 грн
В кошику  од. на суму  грн.
IXFA7N100P IXF_7N100P.pdf
IXFA7N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+594.38 грн
5+441.03 грн
10+374.16 грн
25+302.20 грн
30+292.89 грн
50+275.12 грн
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IXFH7N100P IXF_7N100P.pdf
IXFH7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFA7N100P-TRL littelfuse-discrete-mosfets-ixf-7n100p-datasheet?assetguid=2a6e65f4-034a-4ea8-af00-941e933d8061
IXFA7N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 7A; 300W; D2PAK,TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGH72N60A3 IXG_72N60A3.pdf
IXGH72N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
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IXGH48N60A3 IXGA(P,H)48N60A3.pdf
IXGH48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP48N60A3 IXGA(P,H)48N60A3.pdf
IXGP48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGP36N60A3 IXGA(P,H)36N60A3.pdf
IXGP36N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
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Мінімальне замовлення: 50 шт
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IXGA36N60A3-TRL
IXGA36N60A3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
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