Продукція > IXYS > Всі товари виробника IXYS (20360) > Сторінка 264 з 340

Обрати Сторінку:   [  << Попередня Сторінка ]  1 34 68 102 136 170 204 238 259 260 261 262 263 264 265 266 267 268 269 272 306 340  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
IXTT60N20L2 IXTT60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
Drain-source voltage: 200V
кількість в упаковці: 1 шт
товар відсутній
IXTT64N25P IXTT64N25P IXYS IXTQ64N25P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTT68P20T IXYS littelfuse_discrete_mosfets_p-channel_ixt_68p20t_datasheet.pdf.pdf IXTT68P20T SMD P channel transistors
на замовлення 14 шт:
термін постачання 7-14 дні (днів)
1+1083.81 грн
3+ 1024.71 грн
IXTT69N30P IXTT69N30P IXYS IXTQ69N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 330ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
1+554.9 грн
IXTT6N120 IXTT6N120 IXYS IXTH(T)6N120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO268; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
товар відсутній
IXTT6N150 IXTT6N150 IXYS IXTH(T)6N150.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us
Drain-source voltage: 1.5kV
Drain current: 6A
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Reverse recovery time: 1.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTT74N20P IXTT74N20P IXYS IXTQ74N20P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO268
Mounting: SMD
Power dissipation: 480W
Gate charge: 107nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 74A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 34mΩ
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
товар відсутній
IXTT75N10L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_75n10_datasheet.pdf.pdf IXTT75N10L2 SMD N channel transistors
на замовлення 5 шт:
термін постачання 7-14 дні (днів)
1+1353.64 грн
2+ 953.12 грн
3+ 900.68 грн
IXTT80N20L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_80n20l_datasheet.pdf.pdf IXTT80N20L SMD N channel transistors
товар відсутній
IXTT82N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf IXTT82N25P SMD N channel transistors
на замовлення 9 шт:
термін постачання 7-14 дні (днів)
1+636.48 грн
5+ 614.33 грн
IXTT88N30P IXTT88N30P IXYS IXTH88N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXTT8P50 IXYS 94534.pdf IXTT8P50 SMD P channel transistors
на замовлення 48 шт:
термін постачання 7-14 дні (днів)
1+711.78 грн
2+ 500.28 грн
6+ 472.81 грн
IXTT90P10P IXTT90P10P IXYS IXT_90P10P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
товар відсутній
IXTT96N15P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf IXTT96N15P SMD N channel transistors
товар відсутній
IXTU01N100 IXTU01N100 IXYS IXTU(Y)01N100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
кількість в упаковці: 1 шт
товар відсутній
IXTU4N70X2 IXTU4N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 7-14 дні (днів)
2+198.12 грн
5+ 172.02 грн
8+ 132.35 грн
21+ 125.7 грн
Мінімальне замовлення: 2
IXTU8N70X2 IXTU8N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; Idm: 16A; 150W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 150W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 7-14 дні (днів)
2+254.59 грн
5+ 220.43 грн
6+ 160.66 грн
17+ 152.33 грн
Мінімальне замовлення: 2
IXTX102N65X2 IXTX102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
товар відсутній
IXTX110N20L2 IXTX110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
IXTX120N65X2 IXTX120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Case: PLUS247™
Mounting: THT
Drain current: 120A
Drain-source voltage: 650V
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Reverse recovery time: 505ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
кількість в упаковці: 1 шт
товар відсутній
IXTX120P20T IXTX120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS247™
Mounting: THT
Drain current: -120A
Drain-source voltage: -200V
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Type of transistor: P-MOSFET
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 7-14 дні (днів)
1+1990.12 грн
2+ 1815.31 грн
3+ 1747.25 грн
30+ 1680.65 грн
IXTX170P10P IXTX170P10P IXYS IXTX170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Kind of package: tube
Gate charge: 240nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 7-14 дні (днів)
1+1314.2 грн
3+ 1198.11 грн
IXTX17N120L IXTX17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
товар відсутній
IXTX1R4N450HV IXYS IXTX1R4N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
кількість в упаковці: 1 шт
товар відсутній
IXTX200N10L2 IXTX200N10L2 IXYS IXT_200N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Case: PLUS247™
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 1.04kW
Drain current: 200A
Features of semiconductor devices: linear power mosfet
Gate charge: 540nC
Drain-source voltage: 100V
Reverse recovery time: 245ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTX20N150 IXTX20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTX210P10T IXTX210P10T IXYS IXTX210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: PLUS247™
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+1983.85 грн
2+ 1808.4 грн
IXTX22N100L IXTX22N100L IXYS IXTK(X)22N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTX240N075L2 IXTX240N075L2 IXYS IXTK(X)240N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
кількість в упаковці: 1 шт
товар відсутній
IXTX24N100 IXTX24N100 IXYS IXTX24N100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
товар відсутній
IXTX32P60P IXYS DS99990(IXTK-TX32P60P).pdf IXTX32P60P THT P channel transistors
товар відсутній
IXTX3N250L IXTX3N250L IXYS IXTK(X)3N250L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTX40P50P IXTX40P50P IXYS IXT_40P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
товар відсутній
IXTX46N50L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtk46n50l_datasheet.pdf.pdf IXTX46N50L THT N channel transistors
товар відсутній
IXTX4N300P3HV IXYS IXTX4N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Mounting: THT
Case: TO247PLUS-HV
Power dissipation: 960W
Gate charge: 139nC
Polarisation: unipolar
Technology: Polar3™
Features of semiconductor devices: standard power mosfet
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 3kV
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
IXTX550N055T2 IXTX550N055T2 IXYS IXTK(X)550N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
IXTX600N04T2 IXTX600N04T2 IXYS IXTK(X)600N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhanced
Reverse recovery time: 100ns
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IXTX60N50L2 IXTX60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 500V
Mounting: THT
Reverse recovery time: 980ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 960W
кількість в упаковці: 1 шт
товар відсутній
IXTX6N200P3HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtx6n200p3hv_datasheet.pdf.pdf IXTX6N200P3HV THT N channel transistors
товар відсутній
IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)
1+2657.08 грн
30+ 2529.34 грн
IXTX90N25L2 IXTX90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhanced
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTX90P20P IXTX90P20P IXYS IXT_90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Kind of package: tube
Case: PLUS247™
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 315ns
Mounting: THT
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTY01N100 IXTY01N100 IXYS IXTU(Y)01N100.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
кількість в упаковці: 1 шт
товар відсутній
IXTY01N100D IXTY01N100D IXYS IXTP(Y)01N100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
кількість в упаковці: 1 шт
товар відсутній
IXTY02N120P IXTY02N120P IXYS IXTP(Y)02N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
товар відсутній
IXTY02N50D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depleted
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTY08N100D2 IXTY08N100D2 IXYS IXTA(P,Y)08N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 325nC
Kind of channel: depleted
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTY08N100P IXTY08N100P IXYS IXTA(P,Y)08N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
товар відсутній
IXTY10P15T IXTY10P15T IXYS IXT_10P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
IXTY14N60X2 IXTY14N60X2 IXYS IXTY14N60X2_DS_1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 7-14 дні (днів)
1+338.86 грн
5+ 223.02 грн
13+ 202.28 грн
IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
товар відсутній
IXTY18P10T IXTY18P10T IXYS IXT_18P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
кількість в упаковці: 1 шт
на замовлення 175 шт:
термін постачання 7-14 дні (днів)
2+264.45 грн
5+ 229.08 грн
6+ 168.98 грн
16+ 159.82 грн
Мінімальне замовлення: 2
IXTY1N100P IXTY1N100P IXYS IXTA(P,Y)1N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 15Ω
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1N120P IXTY1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
на замовлення 140 шт:
термін постачання 7-14 дні (днів)
2+230.39 грн
5+ 199.68 грн
7+ 152.33 грн
18+ 144.01 грн
Мінімальне замовлення: 2
IXTY1N80P IXTY1N80P IXYS IXTA(P,U,Y)1N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N100P IXTY1R4N100P IXYS IXTA(P,Y)1R4N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120P IXTY1R4N120P IXYS IXTA(P,Y)1R4N120P_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120PHV IXTY1R4N120PHV IXYS IXTA(P,Y)1R4N120P_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252HV
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf IXTY1R6N100D2 SMD N channel transistors
товар відсутній
IXTT60N20L2 IXTH(T,Q)60N20L2.pdf
IXTT60N20L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
Drain-source voltage: 200V
кількість в упаковці: 1 шт
товар відсутній
IXTT64N25P IXTQ64N25P-DTE.pdf
IXTT64N25P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTT68P20T littelfuse_discrete_mosfets_p-channel_ixt_68p20t_datasheet.pdf.pdf
Виробник: IXYS
IXTT68P20T SMD P channel transistors
на замовлення 14 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1083.81 грн
3+ 1024.71 грн
IXTT69N30P IXTQ69N30P-DTE.pdf
IXTT69N30P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 330ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+554.9 грн
IXTT6N120 IXTH(T)6N120.pdf
IXTT6N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO268; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
товар відсутній
IXTT6N150 IXTH(T)6N150.pdf
IXTT6N150
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us
Drain-source voltage: 1.5kV
Drain current: 6A
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Reverse recovery time: 1.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTT74N20P IXTQ74N20P-DTE.pdf
IXTT74N20P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO268
Mounting: SMD
Power dissipation: 480W
Gate charge: 107nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 74A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 34mΩ
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
товар відсутній
IXTT75N10L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_75n10_datasheet.pdf.pdf
Виробник: IXYS
IXTT75N10L2 SMD N channel transistors
на замовлення 5 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1353.64 грн
2+ 953.12 грн
3+ 900.68 грн
IXTT80N20L littelfuse_discrete_mosfets_n-channel_linear_ixt_80n20l_datasheet.pdf.pdf
Виробник: IXYS
IXTT80N20L SMD N channel transistors
товар відсутній
IXTT82N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf
Виробник: IXYS
IXTT82N25P SMD N channel transistors
на замовлення 9 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+636.48 грн
5+ 614.33 грн
IXTT88N30P IXTH88N30P-DTE.pdf
IXTT88N30P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXTT8P50 94534.pdf
Виробник: IXYS
IXTT8P50 SMD P channel transistors
на замовлення 48 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+711.78 грн
2+ 500.28 грн
6+ 472.81 грн
IXTT90P10P IXT_90P10P.pdf
IXTT90P10P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
товар відсутній
IXTT96N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf
Виробник: IXYS
IXTT96N15P SMD N channel transistors
товар відсутній
IXTU01N100 IXTU(Y)01N100.pdf
IXTU01N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
кількість в упаковці: 1 шт
товар відсутній
IXTU4N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf
IXTU4N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+198.12 грн
5+ 172.02 грн
8+ 132.35 грн
21+ 125.7 грн
Мінімальне замовлення: 2
IXTU8N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf
IXTU8N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; Idm: 16A; 150W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 150W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+254.59 грн
5+ 220.43 грн
6+ 160.66 грн
17+ 152.33 грн
Мінімальне замовлення: 2
IXTX102N65X2 IXTK(X)102N65X2.pdf
IXTX102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
товар відсутній
IXTX110N20L2 IXT_110N20L2.pdf
IXTX110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
IXTX120N65X2 IXT_120N65X2.pdf
IXTX120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Case: PLUS247™
Mounting: THT
Drain current: 120A
Drain-source voltage: 650V
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Reverse recovery time: 505ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
кількість в упаковці: 1 шт
товар відсутній
IXTX120P20T IXT_120P20T.pdf
IXTX120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS247™
Mounting: THT
Drain current: -120A
Drain-source voltage: -200V
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Type of transistor: P-MOSFET
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1990.12 грн
2+ 1815.31 грн
3+ 1747.25 грн
30+ 1680.65 грн
IXTX170P10P IXTX170P10P.pdf
IXTX170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Kind of package: tube
Gate charge: 240nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1314.2 грн
3+ 1198.11 грн
IXTX17N120L IXTK(X)17N120L.pdf
IXTX17N120L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
товар відсутній
IXTX1R4N450HV IXTX1R4N450HV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
кількість в упаковці: 1 шт
товар відсутній
IXTX200N10L2 IXT_200N10L2.pdf
IXTX200N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Case: PLUS247™
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 1.04kW
Drain current: 200A
Features of semiconductor devices: linear power mosfet
Gate charge: 540nC
Drain-source voltage: 100V
Reverse recovery time: 245ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTX20N150 IXTK(X)20N150.pdf
IXTX20N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTX210P10T IXTX210P10T.pdf
IXTX210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: PLUS247™
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1983.85 грн
2+ 1808.4 грн
IXTX22N100L IXTK(X)22N100L.pdf
IXTX22N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTX240N075L2 IXTK(X)240N075L2.pdf
IXTX240N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
кількість в упаковці: 1 шт
товар відсутній
IXTX24N100 IXTX24N100.pdf
IXTX24N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
товар відсутній
IXTX32P60P DS99990(IXTK-TX32P60P).pdf
Виробник: IXYS
IXTX32P60P THT P channel transistors
товар відсутній
IXTX3N250L IXTK(X)3N250L.pdf
IXTX3N250L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTX40P50P IXT_40P50P.pdf
IXTX40P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
товар відсутній
IXTX46N50L littelfuse_discrete_mosfets_n-channel_linear_ixtk46n50l_datasheet.pdf.pdf
Виробник: IXYS
IXTX46N50L THT N channel transistors
товар відсутній
IXTX4N300P3HV IXTX4N300P3HV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Mounting: THT
Case: TO247PLUS-HV
Power dissipation: 960W
Gate charge: 139nC
Polarisation: unipolar
Technology: Polar3™
Features of semiconductor devices: standard power mosfet
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 3kV
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
IXTX550N055T2 IXTK(X)550N055T2.pdf
IXTX550N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
IXTX600N04T2 IXTK(X)600N04T2.pdf
IXTX600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhanced
Reverse recovery time: 100ns
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IXTX60N50L2 IXTK(X)60N50L2.pdf
IXTX60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 500V
Mounting: THT
Reverse recovery time: 980ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 960W
кількість в упаковці: 1 шт
товар відсутній
IXTX6N200P3HV littelfuse_discrete_mosfets_n-channel_standard_ixtx6n200p3hv_datasheet.pdf.pdf
Виробник: IXYS
IXTX6N200P3HV THT N channel transistors
товар відсутній
IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+2657.08 грн
30+ 2529.34 грн
IXTX90N25L2 IXTK(X)90N25L2.pdf
IXTX90N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhanced
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTX90P20P IXT_90P20P.pdf
IXTX90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Kind of package: tube
Case: PLUS247™
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 315ns
Mounting: THT
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTY01N100 IXTU(Y)01N100.pdf
IXTY01N100
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
кількість в упаковці: 1 шт
товар відсутній
IXTY01N100D IXTP(Y)01N100D.pdf
IXTY01N100D
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
кількість в упаковці: 1 шт
товар відсутній
IXTY02N120P IXTP(Y)02N120P.pdf
IXTY02N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
товар відсутній
IXTY02N50D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depleted
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTY08N100D2 IXTA(P,Y)08N100D2.pdf
IXTY08N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 325nC
Kind of channel: depleted
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTY08N100P IXTA(P,Y)08N100P.pdf
IXTY08N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
товар відсутній
IXTY10P15T IXT_10P15T.pdf
IXTY10P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
IXTY14N60X2 IXTY14N60X2_DS_1.pdf
IXTY14N60X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+338.86 грн
5+ 223.02 грн
13+ 202.28 грн
IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
товар відсутній
IXTY18P10T IXT_18P10T.pdf
IXTY18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
кількість в упаковці: 1 шт
на замовлення 175 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+264.45 грн
5+ 229.08 грн
6+ 168.98 грн
16+ 159.82 грн
Мінімальне замовлення: 2
IXTY1N100P IXTA(P,Y)1N100P.pdf
IXTY1N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 15Ω
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1N120P IXTY(A,P)1N120P.pdf
IXTY1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
на замовлення 140 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+230.39 грн
5+ 199.68 грн
7+ 152.33 грн
18+ 144.01 грн
Мінімальне замовлення: 2
IXTY1N80P IXTA(P,U,Y)1N80P.pdf
IXTY1N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N100P IXTA(P,Y)1R4N100P.pdf
IXTY1R4N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120P IXTA(P,Y)1R4N120P_HV.pdf
IXTY1R4N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120PHV IXTA(P,Y)1R4N120P_HV.pdf
IXTY1R4N120PHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252HV
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf
Виробник: IXYS
IXTY1R6N100D2 SMD N channel transistors
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 34 68 102 136 170 204 238 259 260 261 262 263 264 265 266 267 268 269 272 306 340  [ Наступна Сторінка >> ]