Продукція > NVT
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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| NVTYS003N03CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel LFPAK33 (Pb-Free) | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS003N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS003N04CLTWG | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 106A Pulsed drain current: 498A Power dissipation: 34W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS003N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V Qualification: AEC-Q101 | на замовлення 5870 шт: термін постачання 21-31 дні (днів) |
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| NVTYS003N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V Qualification: AEC-Q101 | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NVTYS003N04CLTWG | onsemi | MOSFETs T6 40V N-CH LL IN LFPAK33 PACKAGE | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS003N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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| NVTYS003N04CTWG | onsemi | MOSFETs T6 40V N-CH SL IN LFPAK33 PACKAGE | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS003N04CTWG | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 99A Pulsed drain current: 465A Power dissipation: 34W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS003N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS004N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 51.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS004N03CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS004N03CLTWG | onsemi | Description: T6 30V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 51.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Qualification: AEC-Q101 | на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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| NVTYS004N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS004N04CLTWG | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33 Gate charge: 25nC On-state resistance: 4.3mΩ Power dissipation: 27W Gate-source voltage: ±20V Drain current: 84A Drain-source voltage: 40V Pulsed drain current: 371A Case: LFPAK33 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS004N04CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, 40 V, 4.3 mohm, 85 A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS004N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2V @ 50µA Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) | на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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| NVTYS004N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 50µA Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS004N04CTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS004N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 50µA Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS005N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) | на замовлення 2714 шт: термін постачання 21-31 дні (днів) |
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| NVTYS005N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 75A (Tc) | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS005N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS005N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS005N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 75µA Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS005N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 75µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS005N06CLTWG | onsemi | MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS006N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS006N06CLTWG | onsemi | MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS006N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS007N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS007N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS008N06CLTWG | onsemi | MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS008N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 2766 шт: термін постачання 21-31 дні (днів) |
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| NVTYS008N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS010N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Qualification: AEC-Q101 | на замовлення 2874 шт: термін постачання 21-31 дні (днів) |
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| NVTYS010N04CLTWG | onsemi | MOSFETs T6 40V N-CH LL IN LFPAK33 PACKAGE | на замовлення 3000 шт: термін постачання 133-142 дні (днів) | В кошику од. на суму грн. | ||||||||||
| NVTYS010N04CLTWG | onsemi | Description: T6 40V N-CH LL IN LFPAK33 Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 20µA Power Dissipation (Max): 3W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS010N04CTWG | onsemi | MOSFETs T6 40V N-CH SL IN LFPAK33 PACKAGE | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS010N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V Qualification: AEC-Q101 | на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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| NVTYS010N04CTWG | onsemi | Description: T6 40V N-CH SL IN LFPAK33 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 20µA Power Dissipation (Max): 3.1W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS010N06CLTWG | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 51A Pulsed drain current: 217A Power dissipation: 23W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS010N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS010N06CLTWG | ONN | на замовлення 2950 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | |||||||||||
| NVTYS010N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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| NVTYS010N06CLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, 60 V, 9.8 mohm, 51 A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS014N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 45µA Power Dissipation (Max): 3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS014N08HLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS014N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 45µA Power Dissipation (Max): 3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS014P04M8LTWG | onsemi | MOSFETs MV8 40V LL, SINGLE PCH, LFPAK 13 MOHMS MAX | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS014P04M8LTWG | onsemi | Description: MV8 40V LL SINGLE PCH L Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 420µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V Qualification: AEC-Q101 | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NVTYS014P04M8LTWG | onsemi | Description: MV8 40V LL SINGLE PCH L Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3V @ 420µA Power Dissipation (Max): 3.1W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NVTYS020N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS020N08HLTWG | onsemi | MOSFETs T8 80V N-CH LL IN LFPAK33 PACKAGE | на замовлення 220 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| NVTYS020N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS025P04M8LTWG | onsemi | MOSFET MV8 40V P-CH LL IN LFPAK33 PACKAGE | на замовлення 2900 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| NVTYS025P04M8LTWG | onsemi | Description: MV8 40V P-CH LL IN LFPAK Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3V @ 255µA Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS027N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Power Dissipation (Max): 3.2W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 3V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS027N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Power Dissipation (Max): 3.2W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 3V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS027N10MCLTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS029N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 | на замовлення 2828 шт: термін постачання 21-31 дні (днів) |
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| NVTYS029N08HLTWG | onsemi | onsemi T8 80V N-CH LL IN LFPAK33 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS029N08HLTWG | onsemi | Description: T8 80V N-CH LL IN LFPAK33 PACKAG Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS029N08HTWG | onsemi | MOSFETs MOSFET - Power, Single, N-Channel, | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| NVTYS029N08HTWG | onsemi | Description: T8 80V N-CH SG IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V Qualification: AEC-Q101 | на замовлення 5995 шт: термін постачання 21-31 дні (днів) |
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| NVTYS029N08HTWG | onsemi | Description: T8 80V N-CH SG IN LFPAK33 Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 4V @ 20µA Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Qualification: AEC-Q101 Grade: Automotive | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NVTYS040N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 27µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS040N10MCLTWG | onsemi | MOSFETs PTNG 100V LL SINGLE NCH LFPAK33 40 MOHMS MAX | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| NVTYS040N10MCLTWG | onsemi | Description: PTNG 100V LL, SINGLE NCH, LFPAK3 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 27µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V Qualification: AEC-Q101 | на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
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| NVTYS9D6P04M8LTWG | onsemi | Description: MV8 40V LL SINGLE PCH L Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3V @ 580µA Power Dissipation (Max): 3.9W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |