Продукція > WMQ
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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| WMQ | Bussmann / Eaton | Specialty Fuses BUSS HEAT LIMITER | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| WMQ-882 | NS | 1992 | на замовлення 466 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | ||||||||||
| WMQ020N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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| WMQ040N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Pulsed drain current: 170A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 298 шт: термін постачання 14-30 дні (днів) |
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| WMQ050N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 200A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 352 шт: термін постачання 14-30 дні (днів) |
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| WMQ050N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 36A Pulsed drain current: 182A Power dissipation: 33.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 108 шт: термін постачання 14-30 дні (днів) |
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| WMQ060N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 488 шт: термін постачання 14-30 дні (днів) |
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| WMQ080N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMQ090N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 25.3A; Idm: 160A; 27.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: 25.3A Power dissipation: 27.7W Pulsed drain current: 160A Gate charge: 5.6nC | на замовлення 490 шт: термін постачання 14-30 дні (днів) |
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| WMQ12P10TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMQ140DNV6LG4 | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 30A; Idm: 120A; 23.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 120A Power dissipation: 23.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 1190 шт: термін постачання 14-30 дні (днів) |
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| WMQ15DN04TS | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Pulsed drain current: 60A Power dissipation: 11.36W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 378 шт: термін постачання 14-30 дні (днів) |
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| WMQ175N10LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 172A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 286 шт: термін постачання 14-30 дні (днів) |
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| WMQ18P04TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -72A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -18A Pulsed drain current: -72A Power dissipation: 22W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 497 шт: термін постачання 14-30 дні (днів) |
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| WMQ26P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMQ28N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 54A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 450 шт: термін постачання 14-30 дні (днів) |
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| WMQ30N02T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W Mounting: SMD Case: PDFN3030-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 43.8nC On-state resistance: 4mΩ Power dissipation: 37.8W Gate-source voltage: ±10V Drain current: 75A Drain-source voltage: 20V Pulsed drain current: 300A Kind of package: reel; tape | на замовлення 465 шт: термін постачання 14-30 дні (днів) |
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| WMQ30N04TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 120A Power dissipation: 18.9W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 499 шт: термін постачання 14-30 дні (днів) |
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| WMQ30P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 29.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 483 шт: термін постачання 14-30 дні (днів) |
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| WMQ30P04T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 330 шт: термін постачання 14-30 дні (днів) |
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| WMQ35P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -140A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMQ40DN03T1 | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 28.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| WMQ40N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 155 шт: термін постачання 14-30 дні (днів) |
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| WMQ46N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 411 шт: термін постачання 14-30 дні (днів) |
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| WMQ50N04T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 395 шт: термін постачання 14-30 дні (днів) |
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| WMQ80N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2930 шт: термін постачання 14-30 дні (днів) |
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