Продукція > WMQ
Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||
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WMQ | Bussmann / Eaton | Specialty Fuses BUSS HEAT LIMITER | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
WMQ-882 | NS | 1992 | на замовлення 466 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
WMQ020N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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WMQ040N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Pulsed drain current: 170A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 335 шт: термін постачання 21-30 дні (днів) |
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WMQ050N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 200A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 475 шт: термін постачання 21-30 дні (днів) |
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WMQ050N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 36A Pulsed drain current: 182A Power dissipation: 33.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 180 шт: термін постачання 21-30 дні (днів) |
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WMQ060N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMQ10N10TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 40A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMQ140DNV6LG4 | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 30A; Idm: 120A; 23.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 120A Power dissipation: 23.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 495 шт: термін постачання 21-30 дні (днів) |
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WMQ140NV6LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 33A; Idm: 132A; 25.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 33A Pulsed drain current: 132A Power dissipation: 25.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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WMQ175N10HG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 168A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 495 шт: термін постачання 21-30 дні (днів) |
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WMQ20N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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WMQ25P06TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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WMQ26P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMQ30N02T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 75A Pulsed drain current: 300A Power dissipation: 37.8W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 4mΩ Mounting: SMD Gate charge: 43.8nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMQ30N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 370 шт: термін постачання 21-30 дні (днів) |
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WMQ30P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 29.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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WMQ35P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -140A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMQ40N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 460 шт: термін постачання 21-30 дні (днів) |
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WMQ50N04T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 395 шт: термін постачання 21-30 дні (днів) |
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WMQ50P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 69W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -200A Power dissipation: 69W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2906 шт: термін постачання 21-30 дні (днів) |
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WMQ55N04T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 220A Power dissipation: 40W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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WMQ80N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2965 шт: термін постачання 21-30 дні (днів) |
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