Продукція > WMQ
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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| WMQ | Bussmann / Eaton | Specialty Fuses BUSS HEAT LIMITER | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| WMQ-882 | NS | 1992 | на замовлення 466 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | ||||||||||
| WMQ020N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 472A Gate charge: 33nC Kind of package: reel; tape | на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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| WMQ040N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 170A Gate charge: 15.9nC Kind of package: reel; tape | на замовлення 298 шт: термін постачання 14-30 дні (днів) |
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| WMQ050N03LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 16nC Kind of package: reel; tape | на замовлення 342 шт: термін постачання 14-30 дні (днів) |
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| WMQ050N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 36A Power dissipation: 33.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 182A Gate charge: 10.1nC | на замовлення 108 шт: термін постачання 14-30 дні (днів) |
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| WMQ060N04LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Power dissipation: 30W Case: PDFN3030-8 On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A Gate-source voltage: ±20V | на замовлення 425 шт: термін постачання 14-30 дні (днів) |
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| WMQ060N08LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 58A Pulsed drain current: 232A Power dissipation: 43W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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| WMQ080N03LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 112A Gate charge: 7nC Kind of package: reel; tape | на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMQ090NV6LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 44A; Idm: 176A; 29W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 44A Pulsed drain current: 176A Power dissipation: 29W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 402 шт: термін постачання 14-30 дні (днів) |
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| WMQ10N10TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 40A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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| WMQ119N10LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 151A Power dissipation: 42W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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| WMQ12P10TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Case: PDFN3030-8 Mounting: SMD Kind of package: reel; tape Power dissipation: 30W Gate charge: 65nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.1Ω Pulsed drain current: -48A | на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMQ15DN04TS | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W Mounting: SMD Pulsed drain current: 60A Power dissipation: 11.36W Gate charge: 10.4nC Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 32mΩ | на замовлення 378 шт: термін постачання 14-30 дні (днів) |
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| WMQ175N10HG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W Mounting: SMD Polarisation: unipolar Drain current: 42A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 18mΩ Pulsed drain current: 168A Power dissipation: 65.8W Gate charge: 17nC | на замовлення 325 шт: термін постачання 14-30 дні (днів) |
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| WMQ175N10LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W Mounting: SMD Polarisation: unipolar Drain current: 43A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 17.5mΩ Pulsed drain current: 172A Power dissipation: 65.8W Gate charge: 22.7nC | на замовлення 286 шт: термін постачання 14-30 дні (днів) |
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| WMQ20N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 22nC Kind of package: reel; tape | на замовлення 117 шт: термін постачання 14-30 дні (днів) |
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| WMQ25P06TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 259 шт: термін постачання 14-30 дні (днів) |
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| WMQ26P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| WMQ28N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Mounting: SMD Pulsed drain current: 54A Power dissipation: 21W Gate charge: 7.3nC Polarisation: unipolar Drain current: 28A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 18mΩ | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| WMQ30DN04TS | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 28A Power dissipation: 18.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 112A Gate charge: 26nC | на замовлення 389 шт: термін постачання 14-30 дні (днів) |
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| WMQ30N02T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 75A Power dissipation: 37.8W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 4mΩ Mounting: SMD Gate charge: 43.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 300A | на замовлення 453 шт: термін постачання 14-30 дні (днів) |
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| WMQ30N04TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 120A Power dissipation: 18.9W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 497 шт: термін постачання 14-30 дні (днів) |
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| WMQ30N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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| WMQ30P03T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 29.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 483 шт: термін постачання 14-30 дні (днів) |
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| WMQ30P04T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 330 шт: термін постачання 14-30 дні (днів) |
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| WMQ35P02TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Case: PDFN3030-8 Power dissipation: 24W Gate charge: 19nC Polarisation: unipolar Drain current: -35A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 13mΩ Mounting: SMD Pulsed drain current: -140A | на замовлення 450 шт: термін постачання 14-30 дні (днів) |
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| WMQ40DN03T1 | WAYON | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 28.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| WMQ40N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 20nC Kind of package: reel; tape | на замовлення 141 шт: термін постачання 14-30 дні (днів) |
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| WMQ46N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 411 шт: термін постачання 14-30 дні (днів) |
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| WMQ50N04T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 200A Gate charge: 36nC | на замовлення 395 шт: термін постачання 14-30 дні (днів) |
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| WMQ55N04T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 220A Power dissipation: 40W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 455 шт: термін постачання 14-30 дні (днів) |
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| WMQ55P02T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W Case: PDFN3030-8 Power dissipation: 39W Gate charge: 43nC Polarisation: unipolar Drain current: -55A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 8.2mΩ Mounting: SMD Pulsed drain current: -220A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| WMQ80N03T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Mounting: SMD Pulsed drain current: 320A Power dissipation: 44.6W Gate charge: 32nC Polarisation: unipolar Drain current: 80A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 3.4mΩ | на замовлення 2930 шт: термін постачання 14-30 дні (днів) |
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