| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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| NSR05201MX4T5G | onsemi |
 Description: 01005_TRENCH_SCHOTTKY_20VPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| NSR05201MX4T5G | onsemi |
Description: 01005_TRENCH_SCHOTTKY_20V Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KA7815AETU | onsemi |
Description: IC REG LINEAR 15V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV68061SNAIT1G | onsemi |
Description: IDEAL DIODE NMOS DRIVER Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Grade: Automotive Current - Supply: 215 µA Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NCV68061SNAIT1G | onsemi |
Description: IDEAL DIODE NMOS DRIVER Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Grade: Automotive Current - Supply: 215 µA Qualification: AEC-Q100 |
на замовлення 2362 шт: термін постачання 21-31 дні (днів) |
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NL27WZ125USG-F22190 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8 Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NL27WZ125USG-F22190 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8 Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLV27WZ125USG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8 Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLV27WZ125USG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8 Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: US8 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 1043 шт: термін постачання 21-31 дні (днів) |
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NC7SZ11P6X-L22347 | onsemi |
Description: IC GATE AND 1CH 3-INP SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ11P6X-L22347 | onsemi |
Description: IC GATE AND 1CH 3-INP SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 14104 шт: термін постачання 21-31 дні (днів) |
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| MAX4544EUT-T10 | onsemi |
Description: MAX45LVOLTAGSINGSUPPDUSPANALSWIT Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVBS360BNT3G | onsemi |
Description: DIODE SCHOTTKY 60V 4A SMB Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 30 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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NRVBS360BNT3G | onsemi |
Description: DIODE SCHOTTKY 60V 4A SMB Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 30 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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NVMFWD016N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 9A 8DFN Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.1W (Ta), 36W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 16380 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: 14-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 6 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: 14-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 6 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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P6SMB6.8AT3 | onsemi |
Description: TVS ZENER UNIDIR 600W 6.8V SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DFB20100 | onsemi |
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P Current - Average Rectified (Io): 20 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A |
на замовлення 583 шт: термін постачання 21-31 дні (днів) |
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| NV24C32MUW3VTBG | onsemi |
Description: IC EEPROM 32KBIT I2C 8UDFN Packaging: Bulk Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
на замовлення 38405 шт: термін постачання 21-31 дні (днів) |
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FJP2145TU | onsemi |
Description: TRANS NPN 800V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 120 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVX14SJ | onsemi |
Description: IC INVERT SCHMITT 6CH 1INP 14SOP Features: Schmitt Trigger Packaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 2.2V Input Logic Level - Low: 0.9V Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MOC217R2VM | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.07V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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MOC217R2VM | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.07V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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SC2901DR2G | onsemi |
Description: IC OPAMP 14SOIC Supplier Device Package: 14-SOIC Voltage - Input Offset: 2 mV Current - Input Bias: 25 nA Current - Supply: 800µA Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDS6679AZ-G | onsemi |
Description: FDS6P-CHANNPOWERTRENMOSFET Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NST4617MX2T5G | onsemi |
Description: SS SOT883 GP XSTR 120V Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 112MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 166 mW |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
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NST4617MX2T5G | onsemi |
Description: SS SOT883 GP XSTR 120V Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 112MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 166 mW |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
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| 1N4737ARL | onsemi |
Description: 1N47ZENDIOD7.551W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N4737ATA | onsemi |
Description: 1N47ZENDIOD7.551W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FGA20S140P | onsemi |
Description: IGBT TRENCH/FS 1400V 40A TO3PN Power - Max: 272 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector (Ic) (Max): 40 A Gate Charge: 203.5 nC IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQP9N25C | onsemi |
Description: MOSFET N-CH 250V 8.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C430NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 38A/200A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 55500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 38A/200A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 56703 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NWFET1G | onsemi |
Description: T6-40V N 1.7 MOHMS SL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C430NWFET1G | onsemi |
Description: T6-40V N 1.7 MOHMS SL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NLWFET1G | onsemi |
Description: T6-40V N 1.4 MOHMS LL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NLWFET1G | onsemi |
Description: T6-40V N 1.4 MOHMS LL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 7450 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 35A/185A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C430NWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 35A/185A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 1480 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C430NLT3G | onsemi |
Description: MOSFET N-CH 40V 200A 5DFN Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C430NLT3G | onsemi |
Description: MOSFET N-CH 40V 200A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C430NT3G | onsemi |
Description: MOSFET N-CH 40V 35A/185A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C430NT3G | onsemi |
Description: MOSFET N-CH 40V 35A/185A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C430NLWFAFT3G | onsemi |
Description: MOSFET N-CH 40V 38A/200A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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N93C66BT3ETAG | onsemi |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 4 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Grade: Automotive Memory Interface: Microwire Memory Organization: 256 x 16, 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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N93C66BT3ETAG | onsemi |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 4 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Grade: Automotive Memory Interface: Microwire Memory Organization: 256 x 16, 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2689 шт: термін постачання 21-31 дні (днів) |
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MC10EP142FAR2 | onsemi |
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP Packaging: Tape & Reel (TR) Package / Case: 32-LQFP Output Type: Standard Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 32-LQFP (7x7) Number of Bits per Element: 9 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC10EP142FA | onsemi |
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP Packaging: Tube Package / Case: 32-LQFP Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 32-LQFP (7x7) Number of Bits per Element: 9 |
на замовлення 10795 шт: термін постачання 21-31 дні (днів) |
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MC10EP142FAR2G | onsemi |
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP Packaging: Bulk Package / Case: 32-LQFP Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 32-LQFP (7x7) Number of Bits per Element: 9 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MC10EP142FAG | onsemi |
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP Packaging: Tray Package / Case: 32-LQFP Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 32-LQFP (7x7) Number of Bits per Element: 9 |
на замовлення 2775 шт: термін постачання 21-31 дні (днів) |
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MC10EP142MNG | onsemi |
Description: IC SHIFT REGISTER 9BIT ECL 32QFN Packaging: Tube Package / Case: 32-VFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 32-QFN (5x5) Number of Bits per Element: 9 |
на замовлення 4879 шт: термін постачання 21-31 дні (днів) |
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NL27WZ17DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC-74 Supplier Device Package: SC-74 Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Input Type: Schmitt Trigger Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NL27WZ17MU1TCG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 6-UDFN Supplier Device Package: 6-UDFN (1.45x1) Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Input Type: Schmitt Trigger Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NL27WZ17MU3TCG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 6UDFN Supplier Device Package: 6-UDFN (1x1) Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Input Type: Schmitt Trigger Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVBSS23FA | onsemi |
Description: DIODE SCHOTTKY 30V 2A SOD123FA Current - Reverse Leakage @ Vr: 400 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123FA Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 120pF @ 4V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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MCH6342-TL-H | onsemi |
Description: MOSFET P-CH 30V 4.5A 6MCPH Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-MCPH Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCH6342-TL-W | onsemi |
Description: MOSFET P-CH 30V 4.5A MCPH6 Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SC-88FL/MCPH6 Vgs(th) (Max) @ Id: 1.3V @ 1mA Power Dissipation (Max): 1.5W (Ta) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SFT1342-TL-E | onsemi |
Description: MOSFET P-CH 60V 12A DPAK/TP-FA Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: DPAK/TP-FA Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5267BT1 | onsemi |
Description: DIODE ZENER 75V 500MW SOD-123 Current - Reverse Leakage @ Vr: 100 nA @ 56 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 270 Ohms Voltage - Zener (Nom) (Vz): 75 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| KA7815AETU |
|
Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
товару немає в наявності
В кошику
од. на суму грн.
| NCV68061SNAIT1G |
|
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV68061SNAIT1G |
|
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
на замовлення 2362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.30 грн |
| 10+ | 38.56 грн |
| 25+ | 34.70 грн |
| 100+ | 28.58 грн |
| 250+ | 26.68 грн |
| 500+ | 25.54 грн |
| 1000+ | 24.19 грн |
| NL27WZ125USG-F22190 |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NL27WZ125USG-F22190 |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERT 5.5V US8
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NLV27WZ125USG |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
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| NLV27WZ125USG |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERT 5.5V US8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: US8
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.81 грн |
| 10+ | 55.82 грн |
| 25+ | 52.44 грн |
| 100+ | 37.30 грн |
| 250+ | 31.75 грн |
| 500+ | 30.16 грн |
| 1000+ | 22.64 грн |
| NC7SZ11P6X-L22347 |
|
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.03 грн |
| 6000+ | 6.40 грн |
| NC7SZ11P6X-L22347 |
|
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 14104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.72 грн |
| 14+ | 22.98 грн |
| 25+ | 20.71 грн |
| 100+ | 10.60 грн |
| 250+ | 10.24 грн |
| 500+ | 9.18 грн |
| 1000+ | 6.95 грн |
| NRVBS360BNT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NRVBS360BNT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 4A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 76.91 грн |
| 10+ | 60.24 грн |
| 100+ | 46.86 грн |
| 500+ | 37.27 грн |
| NVMFWD016N06CT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 16380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 218.06 грн |
| 10+ | 136.30 грн |
| 100+ | 94.53 грн |
| 500+ | 75.13 грн |
| NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 14.58 грн |
| NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.61 грн |
| 10+ | 36.35 грн |
| 25+ | 33.90 грн |
| 100+ | 23.63 грн |
| 250+ | 20.00 грн |
| 500+ | 19.09 грн |
| 1000+ | 13.86 грн |
| DFB20100 |
|
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 252.94 грн |
| 15+ | 148.69 грн |
| 105+ | 110.63 грн |
| 510+ | 85.16 грн |
| NV24C32MUW3VTBG |
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 38405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 550+ | 43.61 грн |
| FJP2145TU |
|
Виробник: onsemi
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
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В кошику
од. на суму грн.
| 74LVX14SJ |
|
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V
Input Logic Level - Low: 0.9V
Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V
Input Logic Level - Low: 0.9V
Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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од. на суму грн.
| MOC217R2VM |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 17.67 грн |
| 5000+ | 16.41 грн |
| 12500+ | 16.17 грн |
| MOC217R2VM |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.30 грн |
| 10+ | 35.28 грн |
| 100+ | 23.10 грн |
| 1000+ | 17.11 грн |
| SC2901DR2G |
Виробник: onsemi
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 25 nA
Current - Supply: 800µA
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC OPAMP 14SOIC
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 25 nA
Current - Supply: 800µA
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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од. на суму грн.
| NST4617MX2T5G |
|
Виробник: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
Description: SS SOT883 GP XSTR 120V
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8000+ | 4.19 грн |
| 16000+ | 3.49 грн |
| 24000+ | 3.43 грн |
| 56000+ | 2.66 грн |
| NST4617MX2T5G |
|
Виробник: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.58 грн |
| 19+ | 16.42 грн |
| 100+ | 8.29 грн |
| 500+ | 6.35 грн |
| 1000+ | 4.71 грн |
| 2000+ | 3.96 грн |
| FGA20S140P |
|
Виробник: onsemi
Description: IGBT TRENCH/FS 1400V 40A TO3PN
Power - Max: 272 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 203.5 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: IGBT TRENCH/FS 1400V 40A TO3PN
Power - Max: 272 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 203.5 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FQP9N25C |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS5C430NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 55500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 74.49 грн |
| 3000+ | 69.56 грн |
| NVMFS5C430NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 56703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 228.36 грн |
| 10+ | 142.94 грн |
| 100+ | 99.36 грн |
| 500+ | 79.90 грн |
| NVMFS5C430NWFET1G |
|
Виробник: onsemi
Description: T6-40V N 1.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Description: T6-40V N 1.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS5C430NWFET1G |
|
Виробник: onsemi
Description: T6-40V N 1.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Description: T6-40V N 1.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 226.78 грн |
| 10+ | 142.48 грн |
| 100+ | 99.06 грн |
| 500+ | 79.76 грн |
| NVMFS5C430NLWFET1G |
|
Виробник: onsemi
Description: T6-40V N 1.4 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: T6-40V N 1.4 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 74.29 грн |
| 3000+ | 69.44 грн |
| NVMFS5C430NLWFET1G |
|
Виробник: onsemi
Description: T6-40V N 1.4 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: T6-40V N 1.4 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 7450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 226.78 грн |
| 10+ | 142.48 грн |
| 100+ | 99.06 грн |
| 500+ | 79.76 грн |
| NVMFS5C430NWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS5C430NWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 35A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 237.88 грн |
| 10+ | 153.55 грн |
| 100+ | 109.60 грн |
| 500+ | 86.18 грн |
| NTMFS5C430NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 200A 5DFN
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Description: MOSFET N-CH 40V 200A 5DFN
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 113.86 грн |
| NTMFS5C430NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 200A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 200A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 327.48 грн |
| 10+ | 207.84 грн |
| 100+ | 146.73 грн |
| 500+ | 113.24 грн |
| 1000+ | 105.39 грн |
| 2000+ | 102.90 грн |
| NTMFS5C430NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 35A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 130.94 грн |
| NTMFS5C430NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 279.90 грн |
| NVMFS5C430NLWFAFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| N93C66BT3ETAG |
|
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Grade: Automotive
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Grade: Automotive
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| N93C66BT3ETAG |
|
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Grade: Automotive
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Grade: Automotive
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2689 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 12+ | 27.56 грн |
| 25+ | 26.88 грн |
| 50+ | 24.68 грн |
| 100+ | 24.16 грн |
| 250+ | 23.45 грн |
| 500+ | 22.55 грн |
| 1000+ | 22.02 грн |
| MC10EP142FAR2 |
|
Виробник: onsemi
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Standard
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Standard
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
товару немає в наявності
В кошику
од. на суму грн.
| MC10EP142FA |
|
Виробник: onsemi
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tube
Package / Case: 32-LQFP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tube
Package / Case: 32-LQFP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
на замовлення 10795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 33+ | 660.75 грн |
| MC10EP142FAR2G |
|
Виробник: onsemi
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 1200.74 грн |
| MC10EP142FAG |
|
Виробник: onsemi
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
на замовлення 2775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 1200.74 грн |
| MC10EP142MNG |
|
Виробник: onsemi
Description: IC SHIFT REGISTER 9BIT ECL 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-QFN (5x5)
Number of Bits per Element: 9
Description: IC SHIFT REGISTER 9BIT ECL 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-QFN (5x5)
Number of Bits per Element: 9
на замовлення 4879 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 1200.74 грн |
| NL27WZ17DBVT1G |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-74
Supplier Device Package: SC-74
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V SC-74
Supplier Device Package: SC-74
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NL27WZ17MU1TCG |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6-UDFN
Supplier Device Package: 6-UDFN (1.45x1)
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V 6-UDFN
Supplier Device Package: 6-UDFN (1.45x1)
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NL27WZ17MU3TCG |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Supplier Device Package: 6-UDFN (1x1)
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Supplier Device Package: 6-UDFN (1x1)
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NRVBSS23FA |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A SOD123FA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 30V 2A SOD123FA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MCH6342-TL-H |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 4.5A 6MCPH
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MCPH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Description: MOSFET P-CH 30V 4.5A 6MCPH
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MCPH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
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| MCH6342-TL-W |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 4.5A MCPH6
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-88FL/MCPH6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Description: MOSFET P-CH 30V 4.5A MCPH6
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-88FL/MCPH6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1406+ | 15.36 грн |
| SFT1342-TL-E |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 12A DPAK/TP-FA
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 12A DPAK/TP-FA
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| MMSZ5267BT1 |
|
Виробник: onsemi
Description: DIODE ZENER 75V 500MW SOD-123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 75V 500MW SOD-123
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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од. на суму грн.