Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N4454 | onsemi |
![]() Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 52168 шт: термін постачання 21-31 дні (днів) |
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MM74HCT374N | onsemi |
![]() Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Tri-State, Non-Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.2mA, 7.2mA Trigger Type: Positive Edge Clock Frequency: 30 MHz Input Capacitance: 10 pF Supplier Device Package: 20-PDIP Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1681BAD2R2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCP1681BAD2R2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
на замовлення 4456 шт: термін постачання 21-31 дні (днів) |
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NCP1681ABD2R2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 95kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1681ABD2R2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 95kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
на замовлення 2269 шт: термін постачання 21-31 дні (днів) |
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NCP1681AAD2R2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1681AAD2R2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
на замовлення 1875 шт: термін постачання 21-31 дні (днів) |
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FDMC013P030Z | onsemi |
![]() Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS016N10MCLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 3V @ 64µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFWS2D3P04M8LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2.7mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5436 шт: термін постачання 21-31 дні (днів) |
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NVMFWS025P04M8LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 255µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1434 шт: термін постачання 21-31 дні (днів) |
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NVMFWS027N10MCLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.5W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11530 шт: термін постачання 21-31 дні (днів) |
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NVMFS003P03P8ZT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFS003P03P8ZT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V |
на замовлення 1476 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C466NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 38W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 67500 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C466NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 38W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 68731 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H818NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 190µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C406NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NVMFS5C406NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C468NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NVMFS5C468NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
на замовлення 554 шт: термін постачання 21-31 дні (днів) |
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FQPF18N50V2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD237STU | onsemi |
Description: TRANS NPN 80V 2A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD441STU | onsemi |
Description: TRANS NPN 80V 4A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 36 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FJP13007H1TU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FJP3307DH2TU | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FJP3307DTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8161AMX250TBG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NCV8161AMX250TBG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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2N3704 | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS6375 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDS6375 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V |
на замовлення 16667 шт: термін постачання 21-31 дні (днів) |
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NC7S14P5 | onsemi |
![]() ![]() Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: SC-70-5 Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD5C470NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C470NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C470NLWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD5C470NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGAF40N60UFTU | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3PF Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 470µJ (on), 130µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 100 W |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SFTU | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 25ns/115ns Switching Energy: 1.13mJ (on), 310µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD6296 | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V |
на замовлення 24388 шт: термін постачання 21-31 дні (днів) |
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MURF1620CT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NV24C08DTVLT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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NV24C08DTVLT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 56907 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC32DTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 4.4V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC32DTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 4.4V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDZ1827NZ-P | onsemi |
Description: FDZ18COMMONDRAN-CPOWERTRENMOSFET Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ECH8657-TL-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
на замовлення 16473 шт: термін постачання 21-31 дні (днів) |
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ECH8402-TL-E | onsemi |
![]() Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V |
на замовлення 1035562 шт: термін постачання 21-31 дні (днів) |
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ECH8601R-TL-EX | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 98333 шт: термін постачання 21-31 дні (днів) |
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ECH8305-TL-E | onsemi |
Description: MOSFET P-CH 60V 4A 8ECH Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V |
на замовлення 63650 шт: термін постачання 21-31 дні (днів) |
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ECH8301-TL-E | onsemi |
Description: P CHANNEL SILICON MOS FET Packaging: Bulk |
на замовлення 92692 шт: термін постачання 21-31 дні (днів) |
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ECH8315-TL-H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ECH8315-TL-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
на замовлення 4665 шт: термін постачання 21-31 дні (днів) |
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ECH8606-TL-H | onsemi |
Description: NCH+NCH 4V DRIVE SERIES Packaging: Bulk |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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ECH8311-TL-H | onsemi |
Description: PCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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ECH8602R-TL-H | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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ECH8604-TL-E | onsemi |
Description: N-CHANNEL MOSFET Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ECH8201-TL-H | onsemi |
![]() Packaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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FJP13007H2TU-F080 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. |
1N4454 |
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Виробник: onsemi
Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 52168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
45+ | 7.26 грн |
103+ | 3.03 грн |
120+ | 2.61 грн |
500+ | 1.76 грн |
1000+ | 1.35 грн |
2000+ | 1.29 грн |
5000+ | 0.93 грн |
10000+ | 0.78 грн |
50000+ | 0.70 грн |
MM74HCT374N |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
товару немає в наявності
В кошику
од. на суму грн.
NCP1681BAD2R2G |
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Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 185.63 грн |
NCP1681BAD2R2G |
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Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 4456 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 476.88 грн |
10+ | 303.19 грн |
25+ | 262.54 грн |
100+ | 203.26 грн |
250+ | 182.09 грн |
500+ | 169.06 грн |
1000+ | 165.00 грн |
NCP1681ABD2R2G |
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Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
товару немає в наявності
В кошику
од. на суму грн.
NCP1681ABD2R2G |
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Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 2269 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 221.90 грн |
10+ | 135.20 грн |
25+ | 114.72 грн |
100+ | 85.89 грн |
250+ | 75.20 грн |
500+ | 68.62 грн |
1000+ | 62.07 грн |
NCP1681AAD2R2G |
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Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
товару немає в наявності
В кошику
од. на суму грн.
NCP1681AAD2R2G |
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Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 1875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.21 грн |
10+ | 129.14 грн |
25+ | 109.43 грн |
100+ | 81.79 грн |
250+ | 71.52 грн |
500+ | 65.21 грн |
1000+ | 58.93 грн |
FDMC013P030Z |
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Виробник: onsemi
Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
194+ | 125.07 грн |
NVMFWS016N10MCLT1G |
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Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 120.23 грн |
10+ | 73.82 грн |
100+ | 49.46 грн |
500+ | 36.60 грн |
NVMFWS2D3P04M8LT1G |
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Виробник: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5436 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 250.94 грн |
10+ | 202.72 грн |
100+ | 163.98 грн |
500+ | 136.79 грн |
NVMFWS025P04M8LT1G |
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Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 63.74 грн |
10+ | 50.12 грн |
100+ | 39.00 грн |
500+ | 31.02 грн |
NVMFWS027N10MCLT1G |
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Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11530 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.16 грн |
10+ | 68.07 грн |
100+ | 45.28 грн |
500+ | 33.31 грн |
NVMFS003P03P8ZT1G |
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Виробник: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
NVMFS003P03P8ZT1G |
![]() |
Виробник: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 177.52 грн |
10+ | 142.43 грн |
100+ | 113.35 грн |
500+ | 90.01 грн |
NVMFD5C466NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 60.77 грн |
3000+ | 55.86 грн |
NVMFD5C466NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 68731 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 194.46 грн |
10+ | 120.51 грн |
100+ | 82.60 грн |
500+ | 62.30 грн |
NVMFS6H818NLWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 371.17 грн |
10+ | 244.21 грн |
100+ | 178.38 грн |
500+ | 139.70 грн |
NVMFS5C406NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
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NVMFS5C406NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 371.98 грн |
10+ | 300.63 грн |
100+ | 243.22 грн |
NVMFS5C468NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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NVMFS5C468NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.09 грн |
10+ | 81.82 грн |
100+ | 63.65 грн |
500+ | 50.63 грн |
FQPF18N50V2 |
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Виробник: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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BD237STU |
Виробник: onsemi
Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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BD441STU |
Виробник: onsemi
Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
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FJP13007H1TU |
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Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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FJP3307DH2TU |
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Виробник: onsemi
Description: TRANS NPN 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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FJP3307DTU |
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Виробник: onsemi
Description: TRANS NPN 400V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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од. на суму грн.
NCV8161AMX250TBG |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 17.78 грн |
10000+ | 16.06 грн |
15000+ | 15.53 грн |
NCV8161AMX250TBG |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.27 грн |
10+ | 44.76 грн |
25+ | 37.17 грн |
100+ | 27.08 грн |
250+ | 23.35 грн |
500+ | 21.10 грн |
1000+ | 18.92 грн |
2500+ | 16.98 грн |
2N3704 |
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Виробник: onsemi
Description: TRANS NPN 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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FDS6375 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 27.83 грн |
5000+ | 25.28 грн |
FDS6375 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 16667 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 88.76 грн |
10+ | 57.65 грн |
100+ | 40.13 грн |
500+ | 30.24 грн |
1000+ | 27.81 грн |
NC7S14P5 | ![]() |
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Виробник: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NVMFD5C470NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 55.92 грн |
3000+ | 50.68 грн |
NVMFD5C470NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 180.74 грн |
10+ | 111.97 грн |
100+ | 76.42 грн |
500+ | 57.45 грн |
NVMFD5C470NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C470NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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FGAF40N60UFTU |
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Виробник: onsemi
Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 226 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 318.72 грн |
30+ | 169.93 грн |
120+ | 139.82 грн |
FGH40N60SFTU |
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Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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FDD6296 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
на замовлення 24388 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
644+ | 37.92 грн |
MURF1620CT |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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NV24C08DTVLT3G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 23.46 грн |
6000+ | 22.03 грн |
9000+ | 21.71 грн |
15000+ | 20.00 грн |
21000+ | 19.75 грн |
30000+ | 19.49 грн |
NV24C08DTVLT3G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 56907 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 26.34 грн |
25+ | 25.70 грн |
50+ | 23.63 грн |
100+ | 23.12 грн |
250+ | 22.45 грн |
500+ | 21.57 грн |
1000+ | 21.07 грн |
NLV74VHC32DTR2G |
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.31 грн |
NLV74VHC32DTR2G |
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 75.04 грн |
10+ | 43.90 грн |
25+ | 36.43 грн |
100+ | 26.19 грн |
250+ | 22.26 грн |
500+ | 19.85 грн |
1000+ | 17.53 грн |
ECH8657-TL-H |
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Виробник: onsemi
Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 16473 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.27 грн |
10+ | 47.32 грн |
100+ | 30.92 грн |
500+ | 22.38 грн |
1000+ | 20.24 грн |
ECH8402-TL-E |
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Виробник: onsemi
Description: MOSFET N-CH 30V 10A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Description: MOSFET N-CH 30V 10A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
на замовлення 1035562 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1480+ | 16.14 грн |
ECH8601R-TL-EX |
на замовлення 98333 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1401+ | 16.94 грн |
ECH8305-TL-E |
Виробник: onsemi
Description: MOSFET P-CH 60V 4A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Description: MOSFET P-CH 60V 4A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
на замовлення 63650 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
993+ | 21.28 грн |
ECH8301-TL-E |
на замовлення 92692 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
910+ | 23.41 грн |
ECH8315-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 20.86 грн |
ECH8315-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
на замовлення 4665 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 83.11 грн |
10+ | 50.04 грн |
100+ | 32.88 грн |
500+ | 23.93 грн |
1000+ | 21.70 грн |
ECH8606-TL-H |
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
987+ | 24.21 грн |
ECH8311-TL-H |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
919+ | 26.63 грн |
ECH8602R-TL-H |
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
919+ | 26.63 грн |
ECH8604-TL-E |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
888+ | 27.43 грн |
ECH8201-TL-H |
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на замовлення 66000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
579+ | 41.96 грн |
FJP13007H2TU-F080 |
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Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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од. на суму грн.