Продукція > ONSEMI > Всі товари виробника ONSEMI (144076) > Сторінка 223 з 2402

Обрати Сторінку:   [  << Попередня Сторінка ]  1 218 219 220 221 222 223 224 225 226 227 228 240 480 720 960 1200 1440 1680 1920 2160 2400 2402  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IRL640A IRL640A onsemi irl640a-d.pdf Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 5V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1705 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQB2N90TM FQB2N90TM onsemi FQB2N90.pdf Description: MOSFET N-CH 900V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
товару немає в наявності
В кошику  од. на суму  грн.
FSAV332MTCX FSAV332MTCX onsemi FSAV332.pdf Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
товару немає в наявності
В кошику  од. на суму  грн.
FSAV332MTC FSAV332MTC onsemi FSAV332.pdf Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
товару немає в наявності
В кошику  од. на суму  грн.
MOCD223R2VM MOCD223R2VM onsemi MOCD223M-D.PDF Description: OPTOISOLTR 2.5KV 2CH DARL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 10µs, 125µs
Rise / Fall Time (Typ): 8µs, 110µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+29.25 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FST3383QSCX FST3383QSCX onsemi FST3383.pdf Description: IC BUS FET EXCHG SW 5X2:2 24QSOP
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
MOCD223R1VM MOCD223R1VM onsemi MOCD223M.pdf Description: OPTOISOLTR 2.5KV 2CH DARL 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 3.5µs, 95µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 1mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FSAV330QSC FSAV330QSC onsemi FSAV330.pdf Description: IC VIDEO SWITCH QUAD 2X1 16QSOP
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-QSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Packaging: Tube
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
товару немає в наявності
В кошику  од. на суму  грн.
FQB6N60CTM FQB6N60CTM onsemi FQB6N60C%2CFQI6N60C.pdf Description: MOSFET N-CH 600V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
ISL9R460P2 ISL9R460P2 onsemi ISL9R460P2.pdf Description: DIODE GEN PURP 600V 4A TO220-2
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 22 ns
товару немає в наявності
В кошику  од. на суму  грн.
HCPL4502SDV HCPL4502SDV onsemi 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf Description: OPTOISO 2.5KV TRANS W/BASE 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику  од. на суму  грн.
FST3383QSC FST3383QSC onsemi FST3383.pdf Description: IC BUS FET EXCHG SW 5X2:2 24QSOP
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tube
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
товару немає в наявності
 Мінімальне замовлення: 756 шт
В кошику  од. на суму  грн.
HUF75329D3ST HUF75329D3ST onsemi huf75329d3s-d.pdf Description: MOSFET N-CH 55V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
QVE00832C onsemi QVE00832.pdf Description: SENSOR OPT SLOT PHOTOTRANS MODUL
Current - DC Forward (If) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 20 mA
Response Time: 4µs, 4µs
Output Configuration: Phototransistor
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: Module, PC Pins, Slot Type
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
FQPF9P25 FQPF9P25 onsemi fqpf9p25-d.pdf Description: MOSFET P-CH 250V 6A TO220F-3
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
3+130.83 грн
10+104.61 грн
100+83.25 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FQI27P06TU onsemi Description: MOSFET P-CH 60V 27A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU6K GBU6K onsemi gbu6m-d.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
3+149.86 грн
20+67.77 грн
100+56.71 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FQP55N06 FQP55N06 onsemi FQP55N06.pdf Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 27.5A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
KSC4010OTU KSC4010OTU onsemi KSC4010.pdf Description: TRANS NPN 120V 6A TO3PN
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: TO-3PN
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
KSC4010RTU KSC4010RTU onsemi KSC4010.pdf Description: TRANS NPN 120V 6A TO3PN
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: TO-3PN
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
FQPF50N06L FQPF50N06L onsemi FQPF50N06L.pdf Description: MOSFET N-CH 60V 32.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.6A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 16.3A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQD18N20V2TM FQD18N20V2TM onsemi fqd18n20v2-d.pdf Description: MOSFET N-CH 200V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+36.86 грн
5000+33.08 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FQB2N60TM FQB2N60TM onsemi FQB2N60,%20FQI2N60.pdf Description: MOSFET N-CH 600V 2.4A D2PAK
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
RFD16N06LESM9A RFD16N06LESM9A onsemi rfd16n06lesm-d.pdf Description: MOSFET N-CH 60V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ISL9R460PF2 ISL9R460PF2 onsemi isl9r460pf2-d.pdf Description: DIODE GEN PURP 600V 4A TO220F-2L
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
FQB27P06TM FQB27P06TM onsemi fqb27p06-d.pdf Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+63.53 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NDS9933A NDS9933A onsemi NDS9933A.pdf Description: MOSFET 2P-CH 20V 2.8A 8-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
FQB7P20TM FQB7P20TM onsemi FAIR-S-A0000011863-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 200V 7.3A D2PAK
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQP11N40C FQP11N40C onsemi FQPF11N40C-D.PDF Description: MOSFET N-CH 400V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
на замовлення 3703 шт:
термін постачання 21-31 дні (днів)
2+198.23 грн
50+94.82 грн
100+85.48 грн
500+64.86 грн
1000+59.92 грн
2000+55.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FQB50N06LTM FQB50N06LTM onsemi fqb50n06l-d.pdf Description: MOSFET N-CH 60V 52.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLS640A IRLS640A onsemi irls640a-d.pdf Description: MOSFET N-CH 200V 9.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1705 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 4.9A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQB9N50CTM FQB9N50CTM onsemi fqb9n50c-d.pdf Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQP4N60 FQP4N60 onsemi FQP4N60.pdf Description: MOSFET N-CH 600V 4.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQP33N10L FQP33N10L onsemi FQP33N10L.pdf Description: MOSFET N-CH 100V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQD16N15TF FQD16N15TF onsemi FQD16N15.pdf Description: MOSFET N-CH 150V 11.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FQB22P10TM FQB22P10TM onsemi fqb22p10-d.pdf Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+63.16 грн
1600+56.38 грн
2400+54.13 грн
4000+49.80 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQB33N10LTM FQB33N10LTM onsemi fqb33n10l-d.pdf Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FFPF14X150STU FFPF14X150STU onsemi FFPF14X150S.pdf Description: DIODE AVAL 1500V 14A TO220F2L
Current - Reverse Leakage @ Vr: 20 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 14 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 14A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
RV4141AMT RV4141AMT onsemi FAIRS31314-1.pdf?t.download=true&u=5oefqw Description: IC CTRLR LP AC GFI 8-SOIC
Supplier Device Package: 8-SOIC
Current - Supply: 10mA
Applications: Ground Fault Protection
Operating Temperature: -35°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FPF2125 FPF2125 onsemi ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SC-74A, SOT-753
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: SOT-23-5
Ratio - Input:Output: 1:1
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MM74HC4514WM MM74HC4514WM onsemi MM74HC4514.pdf Description: IC DECODER/DEMUX 1 X 4:16 24-SOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 24-SOP
товару немає в наявності
В кошику  од. на суму  грн.
MM74HC4514MTC MM74HC4514MTC onsemi MM74HC4514.pdf Description: IC DECODER/DEMUX 1X4:16 24-TSSOP
Part Status: Obsolete
Supplier Device Package: 24-TSSOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
FPF2124 FPF2124 onsemi ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 24638 шт:
термін постачання 21-31 дні (днів)
3+149.07 грн
10+128.74 грн
25+121.41 грн
100+97.08 грн
250+91.16 грн
500+79.76 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MM74HC4514WMX MM74HC4514WMX onsemi MM74HC4514.pdf Description: IC DECODER/DEMUX 1 X 4:16 24-SOP
Part Status: Obsolete
Supplier Device Package: 24-SOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
MM74HC4514MTCX MM74HC4514MTCX onsemi MM74HC4514.pdf Description: IC DECODER/DEMUX 1X4:16 24-TSSOP
Part Status: Obsolete
Supplier Device Package: 24-TSSOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FQP3N80 FQP3N80 onsemi FQP3N80.pdf Description: MOSFET N-CH 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FKPF12N80 FKPF12N80 onsemi FKPF12N80.pdf Description: TRIAC 800V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F-3
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HUF76429D3S HUF76429D3S onsemi HUF76429D3S.pdf Description: MOSFET N-CH 60V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
FKPF10N80 onsemi Description: TRIAC 800V 10A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FODB100 FODB100 onsemi FODB100.pdf Description: OPTOISO 2.5KV TRANSISTOR 4BGA
товару немає в наявності
В кошику  од. на суму  грн.
IRFI740BTU onsemi IRFW740B%2C%20IRFI740B.pdf Description: MOSFET N-CH 400V 10A I2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQB19N20LTM FQB19N20LTM onsemi fqb19n20l-d.pdf Description: MOSFET N-CH 200V 21A D2PAK
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+54.89 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQPF28N15T FQPF28N15T onsemi FQPF28N15.pdf Description: MOSFET N-CH 150V 16.7A TO220F
товару немає в наявності
В кошику  од. на суму  грн.
HUF76429D3ST HUF76429D3ST onsemi HUF76429D3S.pdf Description: MOSFET N-CH 60V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TIP146TU TIP146TU onsemi TIP140%20-%20142%2C%20TIP145%20-%20147.pdf Description: TRANS PNP DARL 80V 10A TO-220-3
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Operating Temperature: 150°C (TJ)
товару немає в наявності
 Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
TIP147FTU TIP147FTU onsemi tip147f-d.pdf Description: TRANS PNP DARL 100V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-3PF
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
2+241.05 грн
30+126.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TIP142FTU TIP142FTU onsemi TIP140-42F.pdf Description: TRANS NPN DARL 100V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-3PF
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
товару немає в наявності
 Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
HUF76629D3 HUF76629D3 onsemi HUF76629D3%28S%29.pdf Description: MOSFET N-CH 100V 20A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
FFPF30U20STU FFPF30U20STU onsemi FFPF30U20S.pdf Description: DIODE AVAL 200V 30A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NDP6020P NDP6020P onsemi NDP6020P-D.PDF Description: MOSFET P-CH 20V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 4.5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRL640A irl640a-d.pdf
IRL640A
Виробник: onsemi
Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 5V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1705 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQB2N90TM FQB2N90.pdf
FQB2N90TM
Виробник: onsemi
Description: MOSFET N-CH 900V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
товару немає в наявності
В кошику  од. на суму  грн.
FSAV332MTCX FSAV332.pdf
FSAV332MTCX
Виробник: onsemi
Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
товару немає в наявності
В кошику  од. на суму  грн.
FSAV332MTC FSAV332.pdf
FSAV332MTC
Виробник: onsemi
Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
товару немає в наявності
В кошику  од. на суму  грн.
MOCD223R2VM MOCD223M-D.PDF
MOCD223R2VM
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 2CH DARL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 10µs, 125µs
Rise / Fall Time (Typ): 8µs, 110µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2500+29.25 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FST3383QSCX FST3383.pdf
FST3383QSCX
Виробник: onsemi
Description: IC BUS FET EXCHG SW 5X2:2 24QSOP
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
MOCD223R1VM MOCD223M.pdf
MOCD223R1VM
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 2CH DARL 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 3.5µs, 95µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 1mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FSAV330QSC FSAV330.pdf
FSAV330QSC
Виробник: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16QSOP
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-QSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Packaging: Tube
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
товару немає в наявності
В кошику  од. на суму  грн.
FQB6N60CTM FQB6N60C%2CFQI6N60C.pdf
FQB6N60CTM
Виробник: onsemi
Description: MOSFET N-CH 600V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
ISL9R460P2 ISL9R460P2.pdf
ISL9R460P2
Виробник: onsemi
Description: DIODE GEN PURP 600V 4A TO220-2
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 22 ns
товару немає в наявності
В кошику  од. на суму  грн.
HCPL4502SDV 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf
HCPL4502SDV
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику  од. на суму  грн.
FST3383QSC FST3383.pdf
FST3383QSC
Виробник: onsemi
Description: IC BUS FET EXCHG SW 5X2:2 24QSOP
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tube
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
товару немає в наявності
Мінімальне замовлення: 756 шт
В кошику  од. на суму  грн.
HUF75329D3ST huf75329d3s-d.pdf
HUF75329D3ST
Виробник: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
QVE00832C QVE00832.pdf
Виробник: onsemi
Description: SENSOR OPT SLOT PHOTOTRANS MODUL
Current - DC Forward (If) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 20 mA
Response Time: 4µs, 4µs
Output Configuration: Phototransistor
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: Module, PC Pins, Slot Type
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
FQPF9P25 fqpf9p25-d.pdf
FQPF9P25
Виробник: onsemi
Description: MOSFET P-CH 250V 6A TO220F-3
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+130.83 грн
10+104.61 грн
100+83.25 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FQI27P06TU
Виробник: onsemi
Description: MOSFET P-CH 60V 27A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU6K gbu6m-d.pdf
GBU6K
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+149.86 грн
20+67.77 грн
100+56.71 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FQP55N06 FQP55N06.pdf
FQP55N06
Виробник: onsemi
Description: MOSFET N-CH 60V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 27.5A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
KSC4010OTU KSC4010.pdf
KSC4010OTU
Виробник: onsemi
Description: TRANS NPN 120V 6A TO3PN
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: TO-3PN
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
KSC4010RTU KSC4010.pdf
KSC4010RTU
Виробник: onsemi
Description: TRANS NPN 120V 6A TO3PN
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: TO-3PN
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
FQPF50N06L FQPF50N06L.pdf
FQPF50N06L
Виробник: onsemi
Description: MOSFET N-CH 60V 32.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.6A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 16.3A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQD18N20V2TM fqd18n20v2-d.pdf
FQD18N20V2TM
Виробник: onsemi
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2500+36.86 грн
5000+33.08 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FQB2N60TM FQB2N60,%20FQI2N60.pdf
FQB2N60TM
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
RFD16N06LESM9A rfd16n06lesm-d.pdf
RFD16N06LESM9A
Виробник: onsemi
Description: MOSFET N-CH 60V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ISL9R460PF2 isl9r460pf2-d.pdf
ISL9R460PF2
Виробник: onsemi
Description: DIODE GEN PURP 600V 4A TO220F-2L
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
FQB27P06TM fqb27p06-d.pdf
FQB27P06TM
Виробник: onsemi
Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+63.53 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NDS9933A NDS9933A.pdf
NDS9933A
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.8A 8-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
FQB7P20TM FAIR-S-A0000011863-1.pdf?t.download=true&u=5oefqw
FQB7P20TM
Виробник: onsemi
Description: MOSFET P-CH 200V 7.3A D2PAK
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQP11N40C FQPF11N40C-D.PDF
FQP11N40C
Виробник: onsemi
Description: MOSFET N-CH 400V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
на замовлення 3703 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+198.23 грн
50+94.82 грн
100+85.48 грн
500+64.86 грн
1000+59.92 грн
2000+55.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FQB50N06LTM fqb50n06l-d.pdf
FQB50N06LTM
Виробник: onsemi
Description: MOSFET N-CH 60V 52.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLS640A irls640a-d.pdf
IRLS640A
Виробник: onsemi
Description: MOSFET N-CH 200V 9.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1705 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 4.9A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQB9N50CTM fqb9n50c-d.pdf
FQB9N50CTM
Виробник: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQP4N60 FQP4N60.pdf
FQP4N60
Виробник: onsemi
Description: MOSFET N-CH 600V 4.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQP33N10L FQP33N10L.pdf
FQP33N10L
Виробник: onsemi
Description: MOSFET N-CH 100V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FQD16N15TF FQD16N15.pdf
FQD16N15TF
Виробник: onsemi
Description: MOSFET N-CH 150V 11.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Виробник: onsemi
Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+63.16 грн
1600+56.38 грн
2400+54.13 грн
4000+49.80 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Виробник: onsemi
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FFPF14X150STU FFPF14X150S.pdf
FFPF14X150STU
Виробник: onsemi
Description: DIODE AVAL 1500V 14A TO220F2L
Current - Reverse Leakage @ Vr: 20 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 14 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 14A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
RV4141AMT FAIRS31314-1.pdf?t.download=true&u=5oefqw
RV4141AMT
Виробник: onsemi
Description: IC CTRLR LP AC GFI 8-SOIC
Supplier Device Package: 8-SOIC
Current - Supply: 10mA
Applications: Ground Fault Protection
Operating Temperature: -35°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FPF2125 ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw
FPF2125
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SC-74A, SOT-753
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: SOT-23-5
Ratio - Input:Output: 1:1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MM74HC4514WM MM74HC4514.pdf
MM74HC4514WM
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 4:16 24-SOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 24-SOP
товару немає в наявності
В кошику  од. на суму  грн.
MM74HC4514MTC MM74HC4514.pdf
MM74HC4514MTC
Виробник: onsemi
Description: IC DECODER/DEMUX 1X4:16 24-TSSOP
Part Status: Obsolete
Supplier Device Package: 24-TSSOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
FPF2124 ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw
FPF2124
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 24638 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+149.07 грн
10+128.74 грн
25+121.41 грн
100+97.08 грн
250+91.16 грн
500+79.76 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MM74HC4514WMX MM74HC4514.pdf
MM74HC4514WMX
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 4:16 24-SOP
Part Status: Obsolete
Supplier Device Package: 24-SOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
MM74HC4514MTCX MM74HC4514.pdf
MM74HC4514MTCX
Виробник: onsemi
Description: IC DECODER/DEMUX 1X4:16 24-TSSOP
Part Status: Obsolete
Supplier Device Package: 24-TSSOP
Voltage Supply Source: Dual Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 4:16
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FQP3N80 FQP3N80.pdf
FQP3N80
Виробник: onsemi
Description: MOSFET N-CH 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FKPF12N80 FKPF12N80.pdf
FKPF12N80
Виробник: onsemi
Description: TRIAC 800V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F-3
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HUF76429D3S HUF76429D3S.pdf
HUF76429D3S
Виробник: onsemi
Description: MOSFET N-CH 60V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
FKPF10N80
Виробник: onsemi
Description: TRIAC 800V 10A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FODB100 FODB100.pdf
FODB100
Виробник: onsemi
Description: OPTOISO 2.5KV TRANSISTOR 4BGA
товару немає в наявності
В кошику  од. на суму  грн.
IRFI740BTU IRFW740B%2C%20IRFI740B.pdf
Виробник: onsemi
Description: MOSFET N-CH 400V 10A I2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQB19N20LTM fqb19n20l-d.pdf
FQB19N20LTM
Виробник: onsemi
Description: MOSFET N-CH 200V 21A D2PAK
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+54.89 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQPF28N15T FQPF28N15.pdf
FQPF28N15T
Виробник: onsemi
Description: MOSFET N-CH 150V 16.7A TO220F
товару немає в наявності
В кошику  од. на суму  грн.
HUF76429D3ST HUF76429D3S.pdf
HUF76429D3ST
Виробник: onsemi
Description: MOSFET N-CH 60V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TIP146TU TIP140%20-%20142%2C%20TIP145%20-%20147.pdf
TIP146TU
Виробник: onsemi
Description: TRANS PNP DARL 80V 10A TO-220-3
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Operating Temperature: 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
TIP147FTU tip147f-d.pdf
TIP147FTU
Виробник: onsemi
Description: TRANS PNP DARL 100V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-3PF
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+241.05 грн
30+126.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TIP142FTU TIP140-42F.pdf
TIP142FTU
Виробник: onsemi
Description: TRANS NPN DARL 100V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-3PF
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
HUF76629D3 HUF76629D3%28S%29.pdf
HUF76629D3
Виробник: onsemi
Description: MOSFET N-CH 100V 20A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
FFPF30U20STU FFPF30U20S.pdf
FFPF30U20STU
Виробник: onsemi
Description: DIODE AVAL 200V 30A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NDP6020P NDP6020P-D.PDF
NDP6020P
Виробник: onsemi
Description: MOSFET P-CH 20V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 4.5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 218 219 220 221 222 223 224 225 226 227 228 240 480 720 960 1200 1440 1680 1920 2160 2400 2402  [ Наступна Сторінка >> ]