| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FDMS3D5N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 86A Pulsed drain current: 745A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMS5672 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 78W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS7602S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W Drain-source voltage: 30/30V Drain current: 30/30A On-state resistance: 12/7.2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.2/2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28/46nC Kind of channel: enhanced Gate-source voltage: ±20/±20V Mounting: SMD Case: Power56 |
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| FDMS7608S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS7650 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 169A Pulsed drain current: 1210A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 209nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD4243 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK Kind of package: reel; tape Case: DPAK Drain-source voltage: -40V Drain current: -14A On-state resistance: 69mΩ Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 29nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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MM74HCT574SJX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Trigger: positive-edge-triggered |
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FDS6680A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
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| FPF2895CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...85°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection |
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| FPF2895UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
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| FPF2895VUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...105°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection |
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MMBZ33VALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Tolerance: ±5% |
на замовлення 1870 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ33VALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
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BZX84C5V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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1SS400T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 3pF Case: SOD523F Max. forward voltage: 1.2V Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 5670 шт: термін постачання 21-30 дні (днів) |
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NSS40201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 2A Power dissipation: 0.46W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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MC74VHC126DR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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MC74VHC126DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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| FSA4157AP6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: analog switch Kind of output: SPDT Technology: TTL Quiescent current: 1µA Kind of package: reel; tape Case: SC70-6 Number of channels: 1 Supply voltage: 2.7...5.5V DC |
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| FDA38N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 22A Pulsed drain current: 150A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 85mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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MBT6429DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 500...1250 Mounting: SMD Kind of package: reel; tape Frequency: 700MHz |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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MMBT6429LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.2A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 500...1250 Mounting: SMD Kind of package: reel; tape Frequency: 700MHz |
на замовлення 1003 шт: термін постачання 21-30 дні (днів) |
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| FDMS7678 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 70A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
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MC74VHC541DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Quiescent current: 40µA |
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MC74VHC541DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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| MC74VHC541DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20WB Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
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MMSZ5228BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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MC74AC253DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC Manufacturer series: AC Mounting: SMD Supply voltage: 2...6V DC Operating temperature: -40...85°C Number of channels: 2 Number of inputs: 5 Kind of output: 3-state Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 3-state; multiplexer Family: AC Case: SOIC16 |
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MC74HCT4051ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V DC; 2...12V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Technology: CMOS; TTL Family: HCT Manufacturer series: HCT |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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MC74HCT4051ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V DC; 2...12V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Family: HCT Manufacturer series: HCT |
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MC74HCT4051ADTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: 2...6V DC; 2...12V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Technology: CMOS; TTL Family: HCT Manufacturer series: HCT |
на замовлення 314 шт: термін постачання 21-30 дні (днів) |
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PACDN042Y3R | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2 Type of diode: TVS array Mounting: SMD Case: SOT23-3 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Number of channels: 2 Kind of package: reel; tape |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
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NCP51460SN33T1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Kind of package: reel; tape Operating voltage: 4.2...28V Type of integrated circuit: voltage reference source Reference voltage: 3.3V Maximum output current: 20mA Mounting: SMD Operating temperature: 0...100°C Case: SOT23 Tolerance: ±1% |
на замовлення 1611 шт: термін постачання 21-30 дні (днів) |
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SBAV99LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
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MMBT4124LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.2A Power dissipation: 0.3W Case: SOT23 Current gain: 60...360 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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FQP47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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| NTH4L027N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced |
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FDB045AN08A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 90A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 138nC Kind of package: reel; tape Kind of channel: enhanced |
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MMBZ5V6ALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 5.6V Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Features of semiconductor devices: ESD protection Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% |
на замовлення 18200 шт: термін постачання 21-30 дні (днів) |
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| 7WBD3306USG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: bus switch; translator Technology: TTL Mounting: SMD Case: US8 Supply voltage: 4...5.5V DC Kind of package: reel; tape Operating temperature: -55...125°C |
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| 7WBD383USG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA Type of integrated circuit: digital Kind of integrated circuit: bus switch; translator Technology: TTL Mounting: SMD Case: US8 Supply voltage: 4...5.5V DC Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 1µA |
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NTZD3154NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.54A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±7V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3790 шт: термін постачання 21-30 дні (днів) |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 5712 шт: термін постачання 21-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 3469 шт: термін постачання 21-30 дні (днів) |
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| DTC114TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ |
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| DTC114YET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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NTS2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Mounting: SMD Power dissipation: 0.29W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Case: SC70; SOT323 Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Type of transistor: P-MOSFET |
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NTS260SFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD123F Max. off-state voltage: 60V Max. load current: 4A Max. forward voltage: 0.65V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 25A |
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NTS4101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Kind of package: reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Power dissipation: 0.329W Polarisation: unipolar Gate charge: 6.4nC Kind of channel: enhanced Gate-source voltage: ±8V Drain current: -0.62A On-state resistance: 0.16Ω |
на замовлення 3127 шт: термін постачання 21-30 дні (днів) |
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NTS4409NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.75A Power dissipation: 0.28W Case: SC70; SOT323 Gate-source voltage: ±8V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 1.2nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2159 шт: термін постачання 21-30 дні (днів) |
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| FDC8601 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 2.7A On-state resistance: 183mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-6 |
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| FDC8602 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.2A Pulsed drain current: 5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC86012 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 88A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 54W Polarisation: unipolar Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 230A Mounting: SMD Case: Power33 |
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SMMUN2215LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry |
товар відсутній |
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LM285D-2.5G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Maximum output current: 20mA |
на замовлення 814 шт: термін постачання 21-30 дні (днів) |
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LM385D-2.5R2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±3%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±3% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA |
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MJF6388G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 40W; TO220FP Kind of package: tube Collector-emitter voltage: 100V Current gain: 100...15000 Collector current: 10A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of transistor: Darlington Mounting: THT Case: TO220FP |
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MJH6284G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 20A Power dissipation: 160W Case: TO247-3 Mounting: THT Kind of package: tube |
товар відсутній |
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74VHCT04AMTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: VHCT |
товар відсутній |
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| 74VHCT374AMTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: VHCT |
товар відсутній |
| FDMS3D5N08LC |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 745A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 745A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS5672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS7602S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Drain-source voltage: 30/30V
Drain current: 30/30A
On-state resistance: 12/7.2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28/46nC
Kind of channel: enhanced
Gate-source voltage: ±20/±20V
Mounting: SMD
Case: Power56
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Drain-source voltage: 30/30V
Drain current: 30/30A
On-state resistance: 12/7.2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28/46nC
Kind of channel: enhanced
Gate-source voltage: ±20/±20V
Mounting: SMD
Case: Power56
товар відсутній
| FDMS7608S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS7650 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD4243 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.42 грн |
| 25+ | 41.03 грн |
| 28+ | 28.55 грн |
| 77+ | 26.99 грн |
| MM74HCT574SJX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| FDS6680A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
товар відсутній
| FPF2895CUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
товар відсутній
| FPF2895UCX |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| FPF2895VUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
товар відсутній
| MMBZ33VALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 1870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.56 грн |
| 165+ | 2.15 грн |
| 490+ | 1.65 грн |
| 1340+ | 1.56 грн |
| SZMMBZ33VALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
товар відсутній
| BZX84C5V6LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 2.77 грн |
| 1SS400T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SOD523F
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SOD523F
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 5670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.74 грн |
| 155+ | 2.23 грн |
| 470+ | 1.71 грн |
| 1290+ | 1.62 грн |
| NSS40201LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.31 грн |
| 35+ | 11.07 грн |
| 90+ | 8.91 грн |
| 250+ | 8.43 грн |
| MC74VHC126DR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| MC74VHC126DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| FSA4157AP6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Kind of output: SPDT
Technology: TTL
Quiescent current: 1µA
Kind of package: reel; tape
Case: SC70-6
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Kind of output: SPDT
Technology: TTL
Quiescent current: 1µA
Kind of package: reel; tape
Case: SC70-6
Number of channels: 1
Supply voltage: 2.7...5.5V DC
товар відсутній
| FDA38N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MBT6429DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 7.45 грн |
| MMBT6429LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.2A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.2A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
на замовлення 1003 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.13 грн |
| 195+ | 1.78 грн |
| 500+ | 1.57 грн |
| 564+ | 1.43 грн |
| FDMS7678 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 70A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 70A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC74VHC541DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
товар відсутній
| MC74VHC541DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| MC74VHC541DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| MMSZ5228BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товар відсутній
| MC74AC253DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Manufacturer series: AC
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Number of channels: 2
Number of inputs: 5
Kind of output: 3-state
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; multiplexer
Family: AC
Case: SOIC16
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Manufacturer series: AC
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Number of channels: 2
Number of inputs: 5
Kind of output: 3-state
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; multiplexer
Family: AC
Case: SOIC16
товар відсутній
| MC74HCT4051ADG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.87 грн |
| 10+ | 44.56 грн |
| 28+ | 29.29 грн |
| 76+ | 27.69 грн |
| MC74HCT4051ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
товар відсутній
| MC74HCT4051ADTG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
на замовлення 314 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.85 грн |
| 10+ | 46.5 грн |
| 33+ | 25.08 грн |
| 89+ | 23.71 грн |
| PACDN042Y3R |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2
Type of diode: TVS array
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Number of channels: 2
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2
Type of diode: TVS array
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Number of channels: 2
Kind of package: reel; tape
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.48 грн |
| 50+ | 7.2 грн |
| 100+ | 6.44 грн |
| 155+ | 5.24 грн |
| 425+ | 4.95 грн |
| NCP51460SN33T1G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Kind of package: reel; tape
Operating voltage: 4.2...28V
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Maximum output current: 20mA
Mounting: SMD
Operating temperature: 0...100°C
Case: SOT23
Tolerance: ±1%
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Kind of package: reel; tape
Operating voltage: 4.2...28V
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Maximum output current: 20mA
Mounting: SMD
Operating temperature: 0...100°C
Case: SOT23
Tolerance: ±1%
на замовлення 1611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 35.25 грн |
| 25+ | 29.34 грн |
| 35+ | 23.63 грн |
| 94+ | 22.34 грн |
| SBAV99LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| MMBT4124LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 60...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 60...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
| FQP47P06 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTH4L027N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDB045AN08A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MMBZ5V6ALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 18200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.74 грн |
| 155+ | 2.3 грн |
| 455+ | 1.77 грн |
| 1250+ | 1.68 грн |
| 7WBD3306USG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| 7WBD383USG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 1µA
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 1µA
товар відсутній
| NTZD3154NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.4 грн |
| 50+ | 9.2 грн |
| 130+ | 6.38 грн |
| 350+ | 6.03 грн |
| NTZD3155CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 5712 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.6 грн |
| 35+ | 10.17 грн |
| 100+ | 8.23 грн |
| 115+ | 7.06 грн |
| 315+ | 6.64 грн |
| NTZD3155CT2G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 3469 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 22.35 грн |
| 22+ | 16.4 грн |
| 29+ | 11.97 грн |
| 100+ | 6.44 грн |
| 130+ | 6.23 грн |
| 250+ | 5.95 грн |
| 358+ | 5.88 грн |
| 500+ | 5.67 грн |
| DTC114TET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
товар відсутній
| DTC114YET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| NTS2101PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SC70; SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SC70; SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
товар відсутній
| NTS260SFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
Max. off-state voltage: 60V
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
Max. off-state voltage: 60V
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
товар відсутній
| NTS4101PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Power dissipation: 0.329W
Polarisation: unipolar
Gate charge: 6.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain current: -0.62A
On-state resistance: 0.16Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Power dissipation: 0.329W
Polarisation: unipolar
Gate charge: 6.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain current: -0.62A
On-state resistance: 0.16Ω
на замовлення 3127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 7.75 грн |
| 54+ | 6.44 грн |
| 163+ | 4.93 грн |
| 447+ | 4.67 грн |
| NTS4409NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.75A
Power dissipation: 0.28W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.75A
Power dissipation: 0.28W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2159 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.31 грн |
| 30+ | 11.56 грн |
| 100+ | 9.2 грн |
| 101+ | 7.99 грн |
| 278+ | 7.56 грн |
| FDC8601 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
товар відсутній
| FDC8602 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC86012 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 88A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 230A
Mounting: SMD
Case: Power33
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 88A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 230A
Mounting: SMD
Case: Power33
товар відсутній
| SMMUN2215LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
товар відсутній
| LM285D-2.5G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
на замовлення 814 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 42.25 грн |
| 25+ | 36.12 грн |
| 31+ | 25.95 грн |
| 85+ | 24.56 грн |
| LM385D-2.5R2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
товар відсутній
| MJF6388G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 40W; TO220FP
Kind of package: tube
Collector-emitter voltage: 100V
Current gain: 100...15000
Collector current: 10A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO220FP
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 40W; TO220FP
Kind of package: tube
Collector-emitter voltage: 100V
Current gain: 100...15000
Collector current: 10A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: TO220FP
товар відсутній
| MJH6284G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
товар відсутній
| 74VHCT04AMTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
товар відсутній
| 74VHCT374AMTCX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHCT
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHCT
товар відсутній