| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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 +1 |
BC857BWT1G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 150...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1650 шт: термін постачання 21-30 дні (днів) |
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M74VHC1G132DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; TSOP5; 2÷5.5VDC; -55÷125°C; 40uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: VHC |
на замовлення 3223 шт: термін постачання 21-30 дні (днів) |
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| SS22FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD123F; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.5V Max. off-state voltage: 20V Type of diode: Schottky rectifying Case: SOD123F Max. forward impulse current: 50A |
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| SS22T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.5V Max. load current: 3A Max. off-state voltage: 20V Type of diode: Schottky rectifying Case: SMB Max. forward impulse current: 75A |
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NCP1380BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 9÷28V; SO8 Type of integrated circuit: PMIC Output current: -800...500mA Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V |
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NCP1380CDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 9÷28V; SO8 Type of integrated circuit: PMIC Output current: -800...500mA Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V |
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NCP1380DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 9÷28V; SO8 Type of integrated circuit: PMIC Case: SO8 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V Output current: -800...500mA |
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1N5364BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 33V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
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FOD852 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4 Type of optocoupler: optocoupler Mounting: THT Case: DIP4 Turn-on time: 0.1ms Turn-off time: 20µs Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 1869 шт: термін постачання 21-30 дні (днів) |
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FOD8523S | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 1099 шт: термін постачання 21-30 дні (днів) |
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FOD8523SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 1364 шт: термін постачання 21-30 дні (днів) |
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FOD852S | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
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FOD852SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 300V Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-15000%@1mA |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| FDMS3500 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 100A; 96W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 49A Pulsed drain current: 100A Power dissipation: 96W Case: Power56 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 22A Power dissipation: 78W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3606S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 10.8/2.8mΩ Mounting: SMD Gate charge: 29/83nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMS3660S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±12V On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2639 шт: термін постачання 21-30 дні (днів) |
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| FDMS3662 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 90A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3669S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 24/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 14.5/7.1mΩ Mounting: SMD Gate charge: 24/34nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS3D5N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 86A Pulsed drain current: 745A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 78W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS7602S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W Mounting: SMD Drain-source voltage: 30/30V Drain current: 30/30A On-state resistance: 12/7.2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.2/2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28/46nC Kind of channel: enhanced Gate-source voltage: ±20/±20V Case: Power56 |
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| FDMS7608S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS7650 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 169A Pulsed drain current: 1210A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 209nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD4243 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK Kind of package: reel; tape Case: DPAK Drain-source voltage: -40V Drain current: -14A On-state resistance: 69mΩ Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 29nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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MM74HCT574SJX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Trigger: positive-edge-triggered |
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FDS6680A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
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| FPF2895CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...85°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection |
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| FPF2895UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
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| FPF2895VUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...105°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection |
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MMBZ33VALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Tolerance: ±5% |
на замовлення 1870 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ33VALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
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BZX84C5V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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1SS400T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 3pF Case: SOD523F Max. forward voltage: 1.2V Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 5670 шт: термін постачання 21-30 дні (днів) |
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NSS40201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 2A Power dissipation: 0.46W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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MC74VHC126DR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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MC74VHC126DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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| FSA4157AP6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: analog switch Kind of output: SPDT Technology: TTL Quiescent current: 1µA Kind of package: reel; tape Case: SC70-6 Number of channels: 1 Supply voltage: 2.7...5.5V DC |
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| FDA38N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 22A Pulsed drain current: 150A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 85mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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MBT6429DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 500...1250 Mounting: SMD Kind of package: reel; tape Frequency: 700MHz |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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MMBT6429LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.2A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 500...1250 Mounting: SMD Kind of package: reel; tape Frequency: 700MHz |
на замовлення 1003 шт: термін постачання 21-30 дні (днів) |
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| FDMS7678 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 70A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
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MC74VHC541DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Quiescent current: 40µA |
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MC74VHC541DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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| MC74VHC541DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20WB Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
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MMSZ5228BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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MC74AC253DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC Manufacturer series: AC Mounting: SMD Supply voltage: 2...6V DC Operating temperature: -40...85°C Number of channels: 2 Number of inputs: 5 Kind of output: 3-state Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 3-state; multiplexer Family: AC Case: SOIC16 |
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MC74HCT4051ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V DC; 2...12V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Technology: CMOS; TTL Family: HCT Manufacturer series: HCT |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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MC74HCT4051ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V DC; 2...12V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Family: HCT Manufacturer series: HCT |
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MC74HCT4051ADTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: 2...6V DC; 2...12V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Technology: CMOS; TTL Family: HCT Manufacturer series: HCT |
на замовлення 314 шт: термін постачання 21-30 дні (днів) |
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PACDN042Y3R | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2 Type of diode: TVS array Mounting: SMD Case: SOT23-3 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Number of channels: 2 Kind of package: reel; tape |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
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NCP51460SN33T1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Kind of package: reel; tape Operating voltage: 4.2...28V Type of integrated circuit: voltage reference source Reference voltage: 3.3V Maximum output current: 20mA Mounting: SMD Operating temperature: 0...100°C Case: SOT23 Tolerance: ±1% |
на замовлення 1611 шт: термін постачання 21-30 дні (днів) |
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SBAV99LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
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MMBT4124LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.2A Power dissipation: 0.3W Case: SOT23 Current gain: 60...360 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товар відсутній |
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FQP47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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| NTH4L027N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced |
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FDB045AN08A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 90A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 138nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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MMBZ5V6ALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 5.6V Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Features of semiconductor devices: ESD protection Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% |
на замовлення 18200 шт: термін постачання 21-30 дні (днів) |
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| 7WBD3306USG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: bus switch; translator Technology: TTL Mounting: SMD Case: US8 Supply voltage: 4...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape |
товар відсутній |
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| 7WBD383USG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA Type of integrated circuit: digital Kind of integrated circuit: bus switch; translator Technology: TTL Mounting: SMD Case: US8 Supply voltage: 4...5.5V DC Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 1µA |
товар відсутній |
| BC857BWT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.14 грн |
| 250+ | 1.52 грн |
| 500+ | 1.33 грн |
| 650+ | 1.27 грн |
| M74VHC1G132DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; TSOP5; 2÷5.5VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; TSOP5; 2÷5.5VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: VHC
на замовлення 3223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.52 грн |
| 50+ | 8.13 грн |
| 130+ | 6.31 грн |
| 358+ | 5.96 грн |
| 3000+ | 5.75 грн |
| SS22FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SOD123F
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SOD123F
Max. forward impulse current: 50A
товар відсутній
| SS22T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. load current: 3A
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SMB
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.5V
Max. load current: 3A
Max. off-state voltage: 20V
Type of diode: Schottky rectifying
Case: SMB
Max. forward impulse current: 75A
товар відсутній
| NCP1380BDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
товар відсутній
| NCP1380CDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
товар відсутній
| NCP1380DDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Output current: -800...500mA
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V
Output current: -800...500mA
товар відсутній
| 1N5364BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| FOD852 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Turn-on time: 0.1ms
Turn-off time: 20µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP4
Turn-on time: 0.1ms
Turn-off time: 20µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 1869 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.05 грн |
| 7+ | 54.27 грн |
| 25+ | 39.76 грн |
| 28+ | 29.73 грн |
| 77+ | 28.11 грн |
| FOD8523S |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 1099 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.74 грн |
| 8+ | 47.96 грн |
| 23+ | 36.11 грн |
| 63+ | 34.15 грн |
| 500+ | 32.89 грн |
| FOD8523SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 1364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.74 грн |
| 10+ | 46.63 грн |
| 23+ | 36.95 грн |
| 62+ | 34.85 грн |
| 1000+ | 33.59 грн |
| FOD852S |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
товар відсутній
| FOD852SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 300V
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-15000%@1mA
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.99 грн |
| 9+ | 43.2 грн |
| FDMS3500 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 78W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 78W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3606S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/2.8mΩ
Mounting: SMD
Gate charge: 29/83nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/2.8mΩ
Mounting: SMD
Gate charge: 29/83nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3660S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2639 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 123.09 грн |
| 5+ | 103.78 грн |
| 11+ | 79.24 грн |
| 29+ | 75.03 грн |
| FDMS3662 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3669S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS3D5N08LC |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 745A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 86A; Idm: 745A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 745A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS5672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS7602S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Mounting: SMD
Drain-source voltage: 30/30V
Drain current: 30/30A
On-state resistance: 12/7.2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28/46nC
Kind of channel: enhanced
Gate-source voltage: ±20/±20V
Case: Power56
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Mounting: SMD
Drain-source voltage: 30/30V
Drain current: 30/30A
On-state resistance: 12/7.2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28/46nC
Kind of channel: enhanced
Gate-source voltage: ±20/±20V
Case: Power56
товар відсутній
| FDMS7608S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS7650 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD4243 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.11 грн |
| 25+ | 41.58 грн |
| 28+ | 28.93 грн |
| 77+ | 27.35 грн |
| MM74HCT574SJX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| FDS6680A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
товар відсутній
| FPF2895CUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
товар відсутній
| FPF2895UCX |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| FPF2895VUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
товар відсутній
| MMBZ33VALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 1870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.6 грн |
| 165+ | 2.18 грн |
| 490+ | 1.67 грн |
| 1340+ | 1.58 грн |
| SZMMBZ33VALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 33V
Max. forward impulse current: 0.87A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
товар відсутній
| BZX84C5V6LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 2.8 грн |
| 1SS400T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SOD523F
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SOD523F
Max. forward voltage: 1.2V
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 5670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.78 грн |
| 155+ | 2.26 грн |
| 470+ | 1.73 грн |
| 1290+ | 1.64 грн |
| NSS40201LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 27.19 грн |
| 23+ | 15.71 грн |
| 90+ | 9.16 грн |
| 247+ | 8.66 грн |
| 1000+ | 8.34 грн |
| MC74VHC126DR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| MC74VHC126DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| FSA4157AP6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Kind of output: SPDT
Technology: TTL
Quiescent current: 1µA
Kind of package: reel; tape
Case: SC70-6
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Kind of output: SPDT
Technology: TTL
Quiescent current: 1µA
Kind of package: reel; tape
Case: SC70-6
Number of channels: 1
Supply voltage: 2.7...5.5V DC
товар відсутній
| FDA38N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MBT6429DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 7.55 грн |
| MMBT6429LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.2A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.2A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 500...1250
Mounting: SMD
Kind of package: reel; tape
Frequency: 700MHz
на замовлення 1003 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.16 грн |
| 195+ | 1.8 грн |
| 500+ | 1.59 грн |
| 564+ | 1.44 грн |
| FDMS7678 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 70A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 70A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC74VHC541DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
товар відсутній
| MC74VHC541DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| MC74VHC541DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| MMSZ5228BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товар відсутній
| MC74AC253DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Manufacturer series: AC
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Number of channels: 2
Number of inputs: 5
Kind of output: 3-state
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; multiplexer
Family: AC
Case: SOIC16
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Manufacturer series: AC
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Number of channels: 2
Number of inputs: 5
Kind of output: 3-state
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; multiplexer
Family: AC
Case: SOIC16
товар відсутній
| MC74HCT4051ADG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.66 грн |
| 10+ | 45.16 грн |
| 28+ | 29.68 грн |
| 76+ | 28.06 грн |
| MC74HCT4051ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
товар відсутній
| MC74HCT4051ADTG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC; 2...12V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS; TTL
Family: HCT
Manufacturer series: HCT
на замовлення 314 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.68 грн |
| 10+ | 47.12 грн |
| 33+ | 25.42 грн |
| 89+ | 24.03 грн |
| PACDN042Y3R |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2
Type of diode: TVS array
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Number of channels: 2
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23-3; Features: ESD protection; Ch: 2
Type of diode: TVS array
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Number of channels: 2
Kind of package: reel; tape
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.63 грн |
| 50+ | 7.29 грн |
| 100+ | 6.52 грн |
| 155+ | 5.31 грн |
| 425+ | 5.02 грн |
| NCP51460SN33T1G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Kind of package: reel; tape
Operating voltage: 4.2...28V
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Maximum output current: 20mA
Mounting: SMD
Operating temperature: 0...100°C
Case: SOT23
Tolerance: ±1%
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Kind of package: reel; tape
Operating voltage: 4.2...28V
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Maximum output current: 20mA
Mounting: SMD
Operating temperature: 0...100°C
Case: SOT23
Tolerance: ±1%
на замовлення 1611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 35.72 грн |
| 25+ | 29.73 грн |
| 35+ | 23.95 грн |
| 94+ | 22.64 грн |
| SBAV99LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| MMBT4124LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 60...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 60...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
| FQP47P06 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTH4L027N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDB045AN08A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MMBZ5V6ALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Features of semiconductor devices: ESD protection
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 18200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.78 грн |
| 155+ | 2.33 грн |
| 455+ | 1.8 грн |
| 1250+ | 1.7 грн |
| 7WBD3306USG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
товар відсутній
| 7WBD383USG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 1µA
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; US8; 4÷5.5VDC; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: bus switch; translator
Technology: TTL
Mounting: SMD
Case: US8
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 1µA
товар відсутній