| Фото | Назва | Виробник | Інформація |
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| NCP2820FCT1G | ONSEMI |
 Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω Kind of package: reel; tape Mounting: SMD Supply voltage: 2.5...5.5V DC Output power: 2.65W Type of integrated circuit: audio amplifier Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Impedance: 4Ω Amplifier class: D Case: flip chip9 |
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| NCP2820MUTBG | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8 Kind of package: reel; tape Mounting: SMD Supply voltage: 2.5...5.5V DC Output power: 2.65W Type of integrated circuit: audio amplifier Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Impedance: 4Ω Amplifier class: D Case: uDFN8 |
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| FR014H5JZ | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection Max. forward impulse current: 0.8A Breakdown voltage: 30V Kind of package: reel; tape Type of diode: diode arrays Features of semiconductor devices: ESD protection Mounting: SMD Case: WDFN8 |
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NUP4114UCLW1T2G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape |
на замовлення 991 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT139ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD Type of integrated circuit: digital Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Operating temperature: -55...125°C |
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NC7SP157P6X | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Case: SC88 Manufacturer series: TinyLogic Technology: CMOS Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: multiplexer Family: NC Mounting: SMD Number of inputs: 3 Type of integrated circuit: digital |
на замовлення 1965 шт: термін постачання 21-30 дні (днів) |
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| NV24C08DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C08MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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CAT24C08TDI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Clock frequency: 400kHz Mounting: SMD Case: TSOT23-5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C08WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C08YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAV24C08WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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| CAV24C08YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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FDS6673BZ | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC6675BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -20A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -32A Mounting: SMD Case: WDFN8 |
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| FDMS6673BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -52A Pulsed drain current: -422A Power dissipation: 73W Case: Power56 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
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| SS33 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape; 2.27W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A Power dissipation: 2.27W |
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NCV8405ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223 Supply voltage: 42V DC On-state resistance: 0.46Ω Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: low-side Mounting: SMD Case: SOT223 |
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NCV8406ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 60V DC |
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NCV8450ASTT3G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 3Ω Kind of package: reel; tape Supply voltage: 4.5...45V DC |
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NCV8452STT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5mA Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.4Ω Kind of package: reel; tape Supply voltage: 5...34V DC |
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NCV8460ADR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.4Ω Kind of package: reel; tape Supply voltage: 6...36V DC |
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NCV8461DR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.7Ω Kind of package: reel; tape Supply voltage: 5...34V DC |
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MC74HC11ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC |
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MC74HC11ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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MC74HC11ADTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: HC |
на замовлення 1021 шт: термін постачання 21-30 дні (днів) |
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| MC74HC11ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: AND Number of channels: 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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ISL9V5036S3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 31A Power dissipation: 250W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: ignition systems |
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BCP56T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
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FDB3632 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMA1028NZ-F021 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; Idm: 6A; 1.4W Mounting: SMD Kind of package: reel; tape Drain current: 3.7A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Case: MicroFET On-state resistance: 90mΩ Gate-source voltage: ±12V Pulsed drain current: 6A Power dissipation: 1.4W Gate charge: 6nC Polarisation: unipolar |
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Capacitance: 0.5...0.9pF |
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BC846CLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 4720 шт: термін постачання 21-30 дні (днів) |
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| FSA2268L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPDT x2 Technology: TTL Case: MicroPak10 Supply voltage: 1.65...4.3V DC |
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| FSA2268UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: analog switch Number of channels: 2 Quiescent current: 500nA Kind of output: SPDT x2 Technology: TTL Case: UMLP10 Supply voltage: 1.65...4.3V DC |
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| NCP456RFCCT2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Case: WLCSP6 Mounting: SMD On-state resistance: 50mΩ Number of channels: 1 Kind of package: reel; tape Supply voltage: 0.75...5.5V DC Kind of output: N-Channel Active logical level: high Control voltage: 0...5.5V DC |
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| NTB25P06T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Mounting: SMD On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK Kind of channel: enhanced Gate-source voltage: ±15V Drain-source voltage: -60V Drain current: -27.5A |
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| NTD14N03RT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 2.5A Pulsed drain current: 28A Power dissipation: 20.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced |
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| NTD20N03L27T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NTD25P03LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Power dissipation: 75W Case: DPAK Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3409 шт: термін постачання 21-30 дні (днів) |
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| NTD4302T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| NTD4804NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: 30V Drain current: 124A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 230A |
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| NTD4805NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: 30V Drain current: 73A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 175A |
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| NTD4808N-1G | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK Mounting: THT Case: IPAK Drain-source voltage: 30V Drain current: 49A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Power dissipation: 54.6W Polarisation: unipolar Kind of package: tube Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 126A |
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BAT54AWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: common anode; double Capacitance: 7.6pF Max. forward voltage: 0.8V Case: SOT323 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
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SBAT54ALT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.225W |
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SBAT54ALT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.225W |
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SBAT54AWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Case: SOT323 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
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NSR0130P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD923 Max. off-state voltage: 30V Max. forward voltage: 0.525V Load current: 0.1A |
на замовлення 6440 шт: термін постачання 21-30 дні (днів) |
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NSR0240V2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Max. forward voltage: 0.7V Case: SOD523 Kind of package: reel; tape Max. forward impulse current: 2A Application: automotive industry |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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NSR0340V2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape Application: automotive industry Mounting: SMD Max. forward impulse current: 1A Case: SOD523 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.7V Load current: 0.25A Semiconductor structure: single diode |
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NSR05F40NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; DSN0402-2; reel,tape Type of diode: Schottky rectifying Max. forward impulse current: 1A Semiconductor structure: single diode Mounting: SMD Case: DSN0402-2 Max. off-state voltage: 40V Kind of package: reel; tape Max. forward voltage: 0.46V Load current: 0.5A |
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NSR0620P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD923; reel,tape Mounting: SMD Max. forward impulse current: 1A Case: SOD923 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward voltage: 0.52V Load current: 0.5A Semiconductor structure: single diode |
на замовлення 5425 шт: термін постачання 21-30 дні (днів) |
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NSR07540SLT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1.5A; SOT23-3; reel,tape Mounting: SMD Max. forward impulse current: 8A Case: SOT23-3 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Load current: 1.5A Semiconductor structure: single diode |
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NSR20F30NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.48V Case: DSN0603-2 Kind of package: reel; tape Max. forward impulse current: 28A |
на замовлення 1435 шт: термін постачання 21-30 дні (днів) |
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UMC3NT1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT353 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common base-collector Base resistor: 10/10kΩ Base-emitter resistor: 10/10kΩ |
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ESD9B5.0ST5G | ONSEMI |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.3W Max. off-state voltage: 5V Breakdown voltage: 7.8V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
на замовлення 8008 шт: термін постачання 21-30 дні (днів) |
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BC857CWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1780 шт: термін постачання 21-30 дні (днів) |
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SBC857CLT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 270...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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MC74VHC138DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; SOIC16; VHC Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
товар відсутній |
| NCP2820FCT1G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: flip chip9
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: flip chip9
товар відсутній
| NCP2820MUTBG |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: uDFN8
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: uDFN8
товар відсутній
| FR014H5JZ |
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Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection
Max. forward impulse current: 0.8A
Breakdown voltage: 30V
Kind of package: reel; tape
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: WDFN8
Category: Transil diodes - arrays
Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection
Max. forward impulse current: 0.8A
Breakdown voltage: 30V
Kind of package: reel; tape
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: WDFN8
товар відсутній
| NUP4114UCLW1T2G |
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Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.35 грн |
| 34+ | 10.52 грн |
| 100+ | 9.47 грн |
| 108+ | 7.58 грн |
| 295+ | 7.16 грн |
| MC74VHCT139ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| NC7SP157P6X |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Case: SC88
Manufacturer series: TinyLogic
Technology: CMOS
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: multiplexer
Family: NC
Mounting: SMD
Number of inputs: 3
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Case: SC88
Manufacturer series: TinyLogic
Technology: CMOS
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: multiplexer
Family: NC
Mounting: SMD
Number of inputs: 3
Type of integrated circuit: digital
на замовлення 1965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.17 грн |
| 18+ | 20.13 грн |
| 20+ | 17.95 грн |
| 25+ | 16.41 грн |
| 50+ | 13.81 грн |
| 100+ | 11.22 грн |
| 144+ | 5.68 грн |
| 396+ | 5.4 грн |
| NV24C08DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C08MUW3VLTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C08TDI-GT3 |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C08WI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C08YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAV24C08WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| CAV24C08YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| FDS6673BZ | |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC6675BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -32A
Mounting: SMD
Case: WDFN8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -32A
Mounting: SMD
Case: WDFN8
товар відсутній
| FDMS6673BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SS33 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Power dissipation: 2.27W
товар відсутній
| NCV8405ASTT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
On-state resistance: 0.46Ω
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
On-state resistance: 0.46Ω
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
товар відсутній
| NCV8406ASTT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
товар відсутній
| NCV8450ASTT3G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 3Ω
Kind of package: reel; tape
Supply voltage: 4.5...45V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 3Ω
Kind of package: reel; tape
Supply voltage: 4.5...45V DC
товар відсутній
| NCV8452STT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5mA
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5mA
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
товар відсутній
| NCV8460ADR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 6...36V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 6...36V DC
товар відсутній
| NCV8461DR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
товар відсутній
| MC74HC11ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
товар відсутній
| MC74HC11ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC11ADTG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
на замовлення 1021 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.13 грн |
| 26+ | 13.74 грн |
| 100+ | 10.31 грн |
| 163+ | 4.98 грн |
| 449+ | 4.7 грн |
| MC74HC11ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| ISL9V5036S3ST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
товар відсутній
| BCP56T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
товар відсутній
| FDB3632 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMA1028NZ-F021 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; Idm: 6A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Case: MicroFET
On-state resistance: 90mΩ
Gate-source voltage: ±12V
Pulsed drain current: 6A
Power dissipation: 1.4W
Gate charge: 6nC
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; Idm: 6A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Case: MicroFET
On-state resistance: 90mΩ
Gate-source voltage: ±12V
Pulsed drain current: 6A
Power dissipation: 1.4W
Gate charge: 6nC
Polarisation: unipolar
товар відсутній
| ESD9L3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.5...0.9pF
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.5...0.9pF
товар відсутній
| BC846CLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 4720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.76 грн |
| 220+ | 1.68 грн |
| 500+ | 1.51 грн |
| 700+ | 1.2 грн |
| 1880+ | 1.13 грн |
| FSA2268L10X |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: TTL
Case: MicroPak10
Supply voltage: 1.65...4.3V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: TTL
Case: MicroPak10
Supply voltage: 1.65...4.3V DC
товар відсутній
| FSA2268UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
Technology: TTL
Case: UMLP10
Supply voltage: 1.65...4.3V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
Technology: TTL
Case: UMLP10
Supply voltage: 1.65...4.3V DC
товар відсутній
| NCP456RFCCT2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Case: WLCSP6
Mounting: SMD
On-state resistance: 50mΩ
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 0.75...5.5V DC
Kind of output: N-Channel
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Case: WLCSP6
Mounting: SMD
On-state resistance: 50mΩ
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 0.75...5.5V DC
Kind of output: N-Channel
Active logical level: high
Control voltage: 0...5.5V DC
товар відсутній
| NTB25P06T4G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK
Kind of channel: enhanced
Gate-source voltage: ±15V
Drain-source voltage: -60V
Drain current: -27.5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK
Kind of channel: enhanced
Gate-source voltage: ±15V
Drain-source voltage: -60V
Drain current: -27.5A
товар відсутній
| NTD14N03RT4G | |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTD20N03L27T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTD25P03LT4G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3409 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.17 грн |
| 6+ | 62.41 грн |
| 18+ | 46.28 грн |
| 49+ | 43.48 грн |
| NTD4302T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTD4804NT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 124A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 230A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 124A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 230A
товар відсутній
| NTD4805NT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 73A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 175A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 30V
Drain current: 73A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 175A
товар відсутній
| NTD4808N-1G |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK
Mounting: THT
Case: IPAK
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 54.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK
Mounting: THT
Case: IPAK
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 54.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
товар відсутній
| BAT54AWT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
товар відсутній
| SBAT54ALT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
товар відсутній
| SBAT54ALT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
товар відсутній
| SBAT54AWT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT323
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT323
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
товар відсутній
| NSR0130P2T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD923
Max. off-state voltage: 30V
Max. forward voltage: 0.525V
Load current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD923
Max. off-state voltage: 30V
Max. forward voltage: 0.525V
Load current: 0.1A
на замовлення 6440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.8 грн |
| 65+ | 5.54 грн |
| 100+ | 4.91 грн |
| 185+ | 4.46 грн |
| 500+ | 4.42 грн |
| 505+ | 4.22 грн |
| NSR0240V2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: SOD523
Kind of package: reel; tape
Max. forward impulse current: 2A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: SOD523
Kind of package: reel; tape
Max. forward impulse current: 2A
Application: automotive industry
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.31 грн |
| 50+ | 7.29 грн |
| 100+ | 6.45 грн |
| 145+ | 5.59 грн |
| NSR0340V2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Application: automotive industry
Mounting: SMD
Max. forward impulse current: 1A
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Application: automotive industry
Mounting: SMD
Max. forward impulse current: 1A
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
товар відсутній
| NSR05F40NXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; DSN0402-2; reel,tape
Type of diode: Schottky rectifying
Max. forward impulse current: 1A
Semiconductor structure: single diode
Mounting: SMD
Case: DSN0402-2
Max. off-state voltage: 40V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Load current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; DSN0402-2; reel,tape
Type of diode: Schottky rectifying
Max. forward impulse current: 1A
Semiconductor structure: single diode
Mounting: SMD
Case: DSN0402-2
Max. off-state voltage: 40V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Load current: 0.5A
товар відсутній
| NSR0620P2T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD923; reel,tape
Mounting: SMD
Max. forward impulse current: 1A
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD923; reel,tape
Mounting: SMD
Max. forward impulse current: 1A
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
на замовлення 5425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.01 грн |
| 50+ | 7.5 грн |
| 100+ | 6.73 грн |
| 165+ | 5.01 грн |
| 450+ | 4.74 грн |
| NSR07540SLT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1.5A; SOT23-3; reel,tape
Mounting: SMD
Max. forward impulse current: 8A
Case: SOT23-3
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1.5A; SOT23-3; reel,tape
Mounting: SMD
Max. forward impulse current: 8A
Case: SOT23-3
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
товар відсутній
| NSR20F30NXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Case: DSN0603-2
Kind of package: reel; tape
Max. forward impulse current: 28A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Case: DSN0603-2
Kind of package: reel; tape
Max. forward impulse current: 28A
на замовлення 1435 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.37 грн |
| 25+ | 21.18 грн |
| 50+ | 16.41 грн |
| 137+ | 15.5 грн |
| UMC3NT1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT353
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common base-collector
Base resistor: 10/10kΩ
Base-emitter resistor: 10/10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT353
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common base-collector
Base resistor: 10/10kΩ
Base-emitter resistor: 10/10kΩ
товар відсутній
| ESD9B5.0ST5G |
|
Виробник: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
на замовлення 8008 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.35 грн |
| 79+ | 4.49 грн |
| 112+ | 3.14 грн |
| 186+ | 1.89 грн |
| 500+ | 1.7 грн |
| 624+ | 1.3 грн |
| 1716+ | 1.23 грн |
| BC857CWT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.38 грн |
| 240+ | 1.54 грн |
| 500+ | 1.4 грн |
| 700+ | 1.19 грн |
| SBC857CLT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 270...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 270...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| MC74VHC138DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; SOIC16; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; SOIC16; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній