| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MBR2560CT | onsemi |
 Description: DIODE ARR SCHOT 60V 12.5A TO2203Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12.5A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
на замовлення 1656 шт: термін постачання 21-31 дні (днів) |
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HUF76629D3ST | onsemi |
Description: MOSFET N-CH 100V 20A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FQB44N10TM | onsemi |
Description: MOSFET N-CH 100V 43.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Power Dissipation (Max): 3.75W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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FQP6N60 | onsemi |
Description: MOSFET N-CH 600V 6.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
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FJA4310OTU | onsemi |
Description: TRANS NPN 140V 10A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V Frequency - Transition: 30MHz Supplier Device Package: TO-3P Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 100 W |
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FQAF22P10 | onsemi |
Description: MOSFET P-CH 100V 16.6A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
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FQAF33N10L | onsemi |
Description: MOSFET N-CH 100V 25.8A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 12.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
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FQA9P25 | onsemi |
Description: MOSFET P-CH 250V 10.5A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
на замовлення 508 шт: термін постачання 21-31 дні (днів) |
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FQA22P10 | onsemi |
Description: MOSFET P-CH 100V 24A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
товару немає в наявності |
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| KA7630TS | onsemi |
Description: IC REG LINEAR 5.1V/8V/12V 10SIP Packaging: Tube Package / Case: 10-SIP, 10-SIPH Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA, 500mA, 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 20V Number of Regulators: 3 Supplier Device Package: 10-SIP H/S Voltage - Output (Min/Fixed): 5.1V, 8V, 12V Control Features: Enable, Reset Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, - Protection Features: Over Temperature, Over Voltage, Short Circuit |
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| KA7632 | onsemi |
Description: IC REG LIN 3.3V/5.1V/8V 10SIP Packaging: Tube Package / Case: 10-SIP, 10-SIPH Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA, 1A, 500mA Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 20V Number of Regulators: 3 Supplier Device Package: 10-SIP H/S Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V Control Features: Enable, Reset Part Status: Obsolete Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA Protection Features: Over Temperature, Over Voltage, Short Circuit |
товару немає в наявності |
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| KA7630 | onsemi |
Description: IC REG LINEAR 5.1V/8V/12V 10SIP Packaging: Tube Package / Case: 10-SIP, 10-SIPH Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA, 500mA, 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 20V Number of Regulators: 3 Supplier Device Package: 10-SIP H/S Voltage - Output (Min/Fixed): 5.1V, 8V, 12V Control Features: Enable, Reset Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, - Protection Features: Over Temperature, Over Voltage, Short Circuit |
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FSAV331MTCX | onsemi |
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm -3db Bandwidth: 300MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 4.75V ~ 5.25V Multiplexer/Demultiplexer Circuit: 4:1 Part Status: Obsolete Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB19N20TM | onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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HGTP2N120CN | onsemi |
Description: IGBT NPT 1200V 13A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A Supplier Device Package: TO-220-3 IGBT Type: NPT Td (on/off) @ 25°C: 25ns/205ns Switching Energy: 96µJ (on), 355µJ (off) Test Condition: 960V, 2.6A, 51Ohm, 15V Gate Charge: 30 nC Part Status: Obsolete Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 104 W |
товару немає в наявності |
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FQA33N10 | onsemi |
Description: MOSFET N-CH 100V 36A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
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FFPF40U60STU | onsemi |
Description: DIODE AVAL 600V 40A TO220F2L Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Avalanche Current - Average Rectified (Io): 40A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FJAF6806DYDTBTU | onsemi |
Description: TRANS NPN 750V 6A TO3PF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFP30U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 30A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQA12P20 | onsemi |
Description: MOSFET P-CH 200V 12.6A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FXL4245MPX | onsemi |
Description: IC XLTR VL BIDIR 24-MLP Packaging: Tape & Reel (TR) Features: Power-Off Protection Package / Case: 24-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-WQFN (3.5x4.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Part Status: Active Number of Circuits: 1 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FQPF44N10 | onsemi |
Description: MOSFET N-CH 100V 27A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF30U60DNTU | onsemi |
Description: DIODE ARR AVAL 600V 30A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQP12P20 | onsemi |
Description: MOSFET P-CH 200V 11.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQA33N10L | onsemi |
Description: MOSFET N-CH 100V 36A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
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FFPF10U120STU | onsemi |
Description: DIODE GEN PURP 1.2KV 10A TO220F |
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FQP10N60C | onsemi |
Description: MOSFET N-CH 600V 9.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
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FQP13N50C | onsemi |
Description: MOSFET N-CH 500V 13A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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FQA19N20L | onsemi |
Description: MOSFET N-CH 200V 25A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
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FSA2267AL10X | onsemi |
Description: IC SWITCH DUAL SPDT 10MICROPAK Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 350mOhm (Typ) -3db Bandwidth: 45MHz Supplier Device Package: 10-MicroPak™ Voltage - Supply, Single (V+): 2.3V ~ 4.3V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
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В кошику од. на суму грн. | ||||||||||||||||
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FQB4N90TM | onsemi |
Description: MOSFET N-CH 900V 4.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
товару немає в наявності |
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ISL9R460S3ST | onsemi |
Description: DIODE GEN PURP 600V 4A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HUFA75329S3ST | onsemi |
Description: MOSFET N-CH 55V 49A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQP8N80C | onsemi |
Description: MOSFET N-CH 800V 8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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HUF76633P3 | onsemi |
Description: MOSFET N-CH 100V 39A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF10N60CYDTU | onsemi |
Description: MOSFET N-CH 600V 9.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HUFA76432P3 | onsemi |
Description: MOSFET N-CH 60V 59A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0452V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Box Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSTD16211MTDX | onsemi |
Description: IC BUS SWITCH 12 X 1:1 56TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSTD16861MTD | onsemi |
Description: IC BUS SWITCH 10 X 1:1 48TSSOP Packaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Circuit: 10 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 48-TSSOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSTD16211MTD | onsemi |
Description: IC BUS SWITCH 12 X 1:1 56TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0501 | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Box Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 46026 шт: термін постачання 21-31 дні (днів) |
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HCPL0500 | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 7% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 500ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 23016 шт: термін постачання 21-31 дні (днів) |
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HCPL0501R2 | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 217500 шт: термін постачання 21-31 дні (днів) |
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FSUSB11MTCX | onsemi |
Description: IC USB SWITCH DUAL 1X1 14TSSOP Packaging: Tape & Reel (TR) Features: Break-Before-Make, USB 1.1 Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 1.5Ohm -3db Bandwidth: 350MHz Supplier Device Package: 14-TSSOP Voltage - Supply, Single (V+): 1.65V ~ 5.5V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQP58N08 | onsemi |
Description: MOSFET N-CH 80V 57.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V Power Dissipation (Max): 146W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB7N60TM | onsemi |
Description: MOSFET N-CH 600V 7.4A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0501R1 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0501R1V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0500R1 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 7% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 500ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0700R1V | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 1µs, 7µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB32N20CTM | onsemi |
Description: MOSFET N-CH 200V 28A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V Power Dissipation (Max): 3.13W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0700R2V | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 1µs, 7µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQAF16N25C | onsemi |
Description: MOSFET N-CH 250V 11.4A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0452R1V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0452R1 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0452R2 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0500R1V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0700R1 | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 1µs, 7µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0452R2V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR2560CT |
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Виробник: onsemi
Description: DIODE ARR SCHOT 60V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE ARR SCHOT 60V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 1656 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.40 грн |
| 50+ | 70.85 грн |
| 100+ | 70.81 грн |
| 500+ | 61.61 грн |
| 1000+ | 60.04 грн |
| HUF76629D3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 81.28 грн |
| FQB44N10TM |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 78.06 грн |
| 1600+ | 69.88 грн |
| 2400+ | 67.57 грн |
| FQP6N60 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 6.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 600V 6.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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| FJA4310OTU |
|
Виробник: onsemi
Description: TRANS NPN 140V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Description: TRANS NPN 140V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
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| FQAF22P10 |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 16.6A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET P-CH 100V 16.6A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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| FQAF33N10L |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 25.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 12.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 100V 25.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 12.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
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од. на суму грн.
| FQA9P25 |
|
Виробник: onsemi
Description: MOSFET P-CH 250V 10.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET P-CH 250V 10.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 508 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 319.48 грн |
| 30+ | 169.34 грн |
| 120+ | 138.76 грн |
| FQA22P10 |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET P-CH 100V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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В кошику
од. на суму грн.
| KA7630TS |
|
Виробник: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
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од. на суму грн.
| KA7632 |
|
Виробник: onsemi
Description: IC REG LIN 3.3V/5.1V/8V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 1A, 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V
Control Features: Enable, Reset
Part Status: Obsolete
Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA
Protection Features: Over Temperature, Over Voltage, Short Circuit
Description: IC REG LIN 3.3V/5.1V/8V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 1A, 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V
Control Features: Enable, Reset
Part Status: Obsolete
Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA
Protection Features: Over Temperature, Over Voltage, Short Circuit
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од. на суму грн.
| KA7630 |
|
Виробник: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
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од. на суму грн.
| FSAV331MTCX |
|
Виробник: onsemi
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 4:1
Part Status: Obsolete
Number of Channels: 2
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 4:1
Part Status: Obsolete
Number of Channels: 2
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| FQB19N20TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 68.23 грн |
| HGTP2N120CN |
|
Виробник: onsemi
Description: IGBT NPT 1200V 13A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
Description: IGBT NPT 1200V 13A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
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| FQA33N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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| FFPF40U60STU |
|
Виробник: onsemi
Description: DIODE AVAL 600V 40A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Avalanche
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE AVAL 600V 40A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Avalanche
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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| FJAF6806DYDTBTU |
|
Виробник: onsemi
Description: TRANS NPN 750V 6A TO3PF
Description: TRANS NPN 750V 6A TO3PF
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| FFP30U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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| FQA12P20 |
|
Виробник: onsemi
Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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| FXL4245MPX |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR 24-MLP
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 24-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-WQFN (3.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 24-MLP
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 24-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-WQFN (3.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 26.00 грн |
| FQPF44N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 27A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 27A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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| FFPF30U60DNTU |
|
Виробник: onsemi
Description: DIODE ARR AVAL 600V 30A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE ARR AVAL 600V 30A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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| FQP12P20 |
|
Виробник: onsemi
Description: MOSFET P-CH 200V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET P-CH 200V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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| FQA33N10L |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
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| FFPF10U120STU |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 10A TO220F
Description: DIODE GEN PURP 1.2KV 10A TO220F
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| FQP10N60C |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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| FQP13N50C |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| FQA19N20L |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 200V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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| FSA2267AL10X |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 350mOhm (Typ)
-3db Bandwidth: 45MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 350mOhm (Typ)
-3db Bandwidth: 45MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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| FQB4N90TM |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 4.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 900V 4.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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| ISL9R460S3ST |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| HUFA75329S3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
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| FQP8N80C |
|
Виробник: onsemi
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
на замовлення 64 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 262.07 грн |
| 50+ | 130.94 грн |
| HUF76633P3 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
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| FQPF10N60CYDTU |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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| HUFA76432P3 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 59A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Description: MOSFET N-CH 60V 59A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
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В кошику
од. на суму грн.
| HCPL0452V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| FSTD16211MTDX |
|
Виробник: onsemi
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
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| FSTD16861MTD |
|
Виробник: onsemi
Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Circuit: 10 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Circuit: 10 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
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| FSTD16211MTD |
|
Виробник: onsemi
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
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В кошику
од. на суму грн.
| HCPL0501 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 46026 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.01 грн |
| 10+ | 67.62 грн |
| 100+ | 50.73 грн |
| 500+ | 40.58 грн |
| 1000+ | 38.28 грн |
| 3000+ | 35.33 грн |
| 6000+ | 33.28 грн |
| 12000+ | 32.04 грн |
| HCPL0500 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 23016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.01 грн |
| 50+ | 54.98 грн |
| 100+ | 50.77 грн |
| 500+ | 40.61 грн |
| 1000+ | 38.31 грн |
| 2000+ | 36.36 грн |
| 5000+ | 33.67 грн |
| 10000+ | 32.37 грн |
| HCPL0501R2 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 217500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 41.54 грн |
| 5000+ | 38.27 грн |
| 7500+ | 37.39 грн |
| 12500+ | 34.15 грн |
| 17500+ | 33.59 грн |
| FSUSB11MTCX |
|
Виробник: onsemi
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Break-Before-Make, USB 1.1
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Break-Before-Make, USB 1.1
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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од. на суму грн.
| FQP58N08 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 57.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Power Dissipation (Max): 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 80V 57.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Power Dissipation (Max): 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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од. на суму грн.
| FQB7N60TM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A D2PAK
Description: MOSFET N-CH 600V 7.4A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0501R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0501R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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од. на суму грн.
| HCPL0500R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| HCPL0700R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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| FQB32N20CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Description: MOSFET N-CH 200V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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| HCPL0700R2V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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| FQAF16N25C |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
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| HCPL0452R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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од. на суму грн.
| HCPL0452R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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од. на суму грн.
| HCPL0452R2 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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од. на суму грн.
| HCPL0500R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0700R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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од. на суму грн.
| HCPL0452R2V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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од. на суму грн.