| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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FMS6400CS | onsemi |
 Description: IC VIDEO DRIVER 8SOICSupplier Device Package: 8-SOIC Standards: PAL Applications: Consumer Video Voltage - Supply: 4.75V ~ 5.25V Function: Driver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF5N90 | onsemi |
Description: MOSFET N-CH 900V 3A TO220F Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1019MTCX | onsemi |
Description: IC TRANSCEIVER FULL 1/1 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 14-TSSOP Duplex: Full Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FMS6400CS1 | onsemi |
Description: IC VIDEO DRIVER 8SOIC Supplier Device Package: 8-SOIC Standards: PAL Applications: Consumer Video Voltage - Supply: 4.75V ~ 5.25V Function: Driver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ISL9R8120S3ST | onsemi |
Description: DIODE GEN PURP 1.2KV 8A D2PAK Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 30pF @ 10V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA76633S3S | onsemi |
Description: MOSFET N-CH 100V 39A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||
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FFA20U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 20A TO-3P |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||
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RFP50N05L | onsemi |
Description: MOSFET N-CH 50V 50A TO220-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2611WV | onsemi |
Description: OPTOISO 2.5KV OPN COLLECTOR 8DIP Current - Output / Channel: 50 mA Number of Channels: 1 Part Status: Obsolete Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Common Mode Transient Immunity (Min): 10kV/µs Rise / Fall Time (Typ): 50ns, 12ns Supplier Device Package: 8-MDIP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 50mA Voltage - Isolation: 2500Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.4V Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Output Type: Open Collector Package / Case: 8-DIP (0.400", 10.16mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQA65N06 | onsemi |
Description: MOSFET N-CH 60V 72A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 36A, 10V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||
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HUF75637S3S | onsemi |
Description: MOSFET N-CH 100V 44A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB34P10TM | onsemi |
Description: MOSFET P-CH 100V 33.5A D2PAK Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V |
на замовлення 13600 шт: термін постачання 21-31 дні (днів) |
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FQB5N90TM | onsemi |
Description: MOSFET N-CH 900V 5.4A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 158W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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HCPL2611SDV | onsemi |
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD Current - Output / Channel: 50 mA Number of Channels: 1 Part Status: Obsolete Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Common Mode Transient Immunity (Min): 10kV/µs Rise / Fall Time (Typ): 50ns, 12ns Supplier Device Package: 8-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 50mA Voltage - Isolation: 2500Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.4V Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Open Collector Package / Case: 8-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP22N30 | onsemi |
Description: MOSFET N-CH 300V 21A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FFAF20U20DNTU | onsemi |
Description: DIODE ARRAY GP 200V 20A TO-3PF Current - Reverse Leakage @ Vr: 20 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-3PF Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 40 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||
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HUFA75637S3S | onsemi |
Description: MOSFET N-CH 100V 44A D2PAK Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Vgs (Max): ±20V |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||
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FFAF30U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 30A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3PF Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP34N20L | onsemi |
Description: MOSFET N-CH 200V 31A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD260LSD | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 8SMD Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 8-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - Output / Channel: 50 mA Number of Channels: 1 Part Status: Active Propagation Delay tpLH / tpHL (Max): 90ns, 75ns Common Mode Transient Immunity (Min): 25kV/µs Rise / Fall Time (Typ): 22ns, 3ns Supplier Device Package: 8-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 50mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.4V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 85°C |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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HUF75639S3 | onsemi |
Description: MOSFET N-CH 100V 56A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FQPF7N80 | onsemi |
Description: MOSFET N-CH 800V 3.8A TO220F Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF27N25T | onsemi |
Description: MOSFET N-CH 250V 14A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FJA4213OTU | onsemi |
Description: TRANS PNP 250V 17A TO3P DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Current - Collector Cutoff (Max): 5µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Power - Max: 130 W Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 17 A Part Status: Obsolete Supplier Device Package: TO-3P Frequency - Transition: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJA4213RTU | onsemi |
Description: TRANS PNP 250V 17A TO3P Power - Max: 130 W Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 17 A Part Status: Obsolete Supplier Device Package: TO-3P Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Current - Collector Cutoff (Max): 5µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP34N20 | onsemi |
Description: MOSFET N-CH 200V 31A TO220-3 Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF70N10 | onsemi |
Description: MOSFET N-CH 100V 35A TO220F Rds On (Max) @ Id, Vgs: 23mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 62W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FJAF6812TU | onsemi |
Description: TRANS NPN 750V 12A TO3PF Power - Max: 60 W Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector (Ic) (Max): 12 A Supplier Device Package: TO-3PF DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 8A, 5V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SGW10N60RUFDTM | onsemi |
Description: IGBT 600V 16A 75W D2PAK Current - Collector Pulsed (Icm): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 16 A Gate Charge: 30 nC Test Condition: 300V, 10A, 20Ohm, 15V Switching Energy: 141µJ (on), 215µJ (off) Td (on/off) @ 25°C: 15ns/36ns Supplier Device Package: TO-263 (D2Pak) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Reverse Recovery Time (trr): 60 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Power - Max: 75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP6N90 | onsemi |
Description: MOSFET N-CH 900V 5.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 2.9A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FSAV331MTC | onsemi |
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP Number of Channels: 2 Part Status: Obsolete Multiplexer/Demultiplexer Circuit: 4:1 Voltage - Supply, Single (V+): 4.75V ~ 5.25V Supplier Device Package: 16-TSSOP -3db Bandwidth: 300MHz On-State Resistance (Max): 10Ohm Applications: Video Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP70N10 | onsemi |
Description: MOSFET N-CH 100V 57A TO220-3 Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 28.5A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB85N06TM_AM002 | onsemi |
Description: MOSFET N-CH 60V 85A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA75639P3 | onsemi |
Description: MOSFET N-CH 100V 56A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||
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HCPL2731WV | onsemi |
Description: OPTOISO 2.5KV 2CH DARL 8DIP Current - DC Forward (If) (Max): 20 mA Number of Channels: 2 Part Status: Obsolete Turn On / Turn Off Time (Typ): 300ns, 5µs Voltage - Output (Max): 18V Supplier Device Package: 8-MDIP Current Transfer Ratio (Min): 500% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Output Type: Darlington Package / Case: 8-DIP (0.400", 10.16mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2731V | onsemi |
Description: OPTOISO 2.5KV 2CH DARL 8DIP Current - DC Forward (If) (Max): 20 mA Number of Channels: 2 Part Status: Obsolete Turn On / Turn Off Time (Typ): 300ns, 5µs Voltage - Output (Max): 18V Supplier Device Package: 8-DIP Current Transfer Ratio (Min): 500% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Output Type: Darlington Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2731SV | onsemi |
Description: OPTOISO 2.5KV 2CH DARL 8SMD Current - DC Forward (If) (Max): 20 mA Number of Channels: 2 Part Status: Obsolete Turn On / Turn Off Time (Typ): 300ns, 5µs Voltage - Output (Max): 18V Supplier Device Package: 8-SMD Current Transfer Ratio (Min): 500% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 8-SMD, Gull Wing Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA75637S3ST | onsemi |
Description: MOSFET N-CH 100V 44A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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HCPL2731SDV | onsemi |
Description: OPTOISO 2.5KV 2CH DARL 8SMD Current - DC Forward (If) (Max): 20 mA Number of Channels: 2 Part Status: Obsolete Turn On / Turn Off Time (Typ): 300ns, 5µs Voltage - Output (Max): 18V Supplier Device Package: 8-SMD Current Transfer Ratio (Min): 500% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 8-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB12N60CTM | onsemi |
Description: MOSFET N-CH 600V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 3.13W (Ta), 225W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSAV450MTCX | onsemi |
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP Number of Channels: 4 Part Status: Obsolete Supplier Device Package: 16-TSSOP -3db Bandwidth: 800MHz On-State Resistance (Max): 7Ohm Applications: Video Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Features: RGB Packaging: Tape & Reel (TR) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 4.5V ~ 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2531V | onsemi |
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2730SV | onsemi |
Description: OPTOISOLTR 2.5KV 2CH DARL 8-SMD Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.3V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Supplier Device Package: 8-SMD Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300ns, 5µs Number of Channels: 2 Current - DC Forward (If) (Max): 20 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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HCPL2531SV | onsemi |
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMD Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FQAF58N08 | onsemi |
Description: MOSFET N-CH 80V 44A TO3PF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FFA30U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 30A TO-3P Current - Reverse Leakage @ Vr: 15 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-3P Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||
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FQP17N40 | onsemi |
Description: MOSFET N-CH 400V 16A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 8A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 2174 шт: термін постачання 21-31 дні (днів) |
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FQPF6N90 | onsemi |
Description: MOSFET N-CH 900V 3.4A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.7A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FM3560M20X | onsemi |
Description: MULTIPLEXER 4/5BIT 2WIRE 20SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF85N06 | onsemi |
Description: MOSFET N-CH 60V 53A TO220F Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 26.5A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FTM3725 | onsemi |
Description: TRANS 4NPN 40V 1.2A 16SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 16-SOIC Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 1.2A Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 4 NPN (Quad) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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HUF76639S3ST | onsemi |
Description: MOSFET N-CH 100V 51A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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FQB7N80TM_AM002 | onsemi |
Description: MOSFET N-CH 800V 6.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V Power Dissipation (Max): 3.13W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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FQA7N60 | onsemi |
Description: MOSFET N-CH 600V 7.7A TO3P Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 152W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||
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FQP85N06 | onsemi |
Description: MOSFET N-CH 60V 85A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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ISL9R1560PF2 | onsemi |
Description: DIODE GEN PURP 600V 15A TO220F Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220F-2L Current - Average Rectified (Io): 15A Technology: Avalanche Reverse Recovery Time (trr): 40 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB46N15TM_AM002 | onsemi |
Description: MOSFET N-CH 150V 45.6A D2PAK Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 210W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB12N50TM_AM002 | onsemi |
Description: MOSFET N-CH 500V 12.1A D2PAK Power Dissipation (Max): 3.13W (Ta), 179W (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 6.05A, 10V Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SGH15N60RUFTU | onsemi |
Description: IGBT 600V 24A 160W TO3P Power - Max: 160 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Test Condition: 300V, 15A, 13Ohm, 15V Switching Energy: 320µJ (on), 356µJ (off) Td (on/off) @ 25°C: 17ns/44ns Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Current - Collector (Ic) (Max): 24 A Gate Charge: 42 nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB47P06TM-AM002 | onsemi |
Description: MOSFET P-CH 60V 47A D2PAK Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| FMS6400CS |
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Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FQPF5N90 |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 900V 3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| FIN1019MTCX |
|
Виробник: onsemi
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 64.12 грн |
| 5000+ | 60.42 грн |
| 7500+ | 59.76 грн |
| FMS6400CS1 |
|
Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| ISL9R8120S3ST |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| HUFA76633S3S |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 100V 39A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Мінімальне замовлення: 400 шт
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| FFA20U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 20A TO-3P
Description: DIODE ARRAY GP 600V 20A TO-3P
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Мінімальне замовлення: 450 шт
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| RFP50N05L |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 50A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 50V 50A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
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| HCPL2611WV |
|
Виробник: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-MDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Description: OPTOISO 2.5KV OPN COLLECTOR 8DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-MDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
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| FQA65N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 36A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Description: MOSFET N-CH 60V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 36A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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Мінімальне замовлення: 450 шт
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| HUF75637S3S |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
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| FQB34P10TM |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Description: MOSFET P-CH 100V 33.5A D2PAK
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
на замовлення 13600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 95.31 грн |
| 1600+ | 86.08 грн |
| FQB5N90TM |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 5.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 900V 5.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
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| HCPL2611SDV |
|
Виробник: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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| FQP22N30 |
|
Виробник: onsemi
Description: MOSFET N-CH 300V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 300V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| FFAF20U20DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 20A TO-3PF
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: DIODE ARRAY GP 200V 20A TO-3PF
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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Мінімальне замовлення: 360 шт
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| HUFA75637S3S |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 44A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs (Max): ±20V
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Мінімальне замовлення: 400 шт
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| FFAF30U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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| FQP34N20L |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 31A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 200V 31A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| FOD260LSD |
|
Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 8SMD
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 90ns, 75ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 22ns, 3ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Description: OPTOISO 5KV OPEN COLLECTOR 8SMD
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 90ns, 75ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 22ns, 3ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 85.41 грн |
| HUF75639S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 56A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.10 грн |
| 10+ | 154.64 грн |
| 100+ | 108.32 грн |
| 800+ | 78.97 грн |
| FQPF7N80 |
|
Виробник: onsemi
Description: MOSFET N-CH 800V 3.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 3.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| FQPF27N25T |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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| FJA4213OTU |
|
Виробник: onsemi
Description: TRANS PNP 250V 17A TO3P
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
Description: TRANS PNP 250V 17A TO3P
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
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| FJA4213RTU |
|
Виробник: onsemi
Description: TRANS PNP 250V 17A TO3P
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: TRANS PNP 250V 17A TO3P
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| FQP34N20 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 31A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Description: MOSFET N-CH 200V 31A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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| FQPF70N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 35A TO220F
Rds On (Max) @ Id, Vgs: 23mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
Description: MOSFET N-CH 100V 35A TO220F
Rds On (Max) @ Id, Vgs: 23mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
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Мінімальне замовлення: 1000 шт
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| FJAF6812TU |
|
Виробник: onsemi
Description: TRANS NPN 750V 12A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 8A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: TRANS NPN 750V 12A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 8A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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| SGW10N60RUFDTM |
|
Виробник: onsemi
Description: IGBT 600V 16A 75W D2PAK
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 30 nC
Test Condition: 300V, 10A, 20Ohm, 15V
Switching Energy: 141µJ (on), 215µJ (off)
Td (on/off) @ 25°C: 15ns/36ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 75 W
Description: IGBT 600V 16A 75W D2PAK
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 30 nC
Test Condition: 300V, 10A, 20Ohm, 15V
Switching Energy: 141µJ (on), 215µJ (off)
Td (on/off) @ 25°C: 15ns/36ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 75 W
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| FQP6N90 |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 5.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 2.9A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Description: MOSFET N-CH 900V 5.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 2.9A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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| FSAV331MTC |
|
Виробник: onsemi
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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| FQP70N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 100V 57A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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| FQB85N06TM_AM002 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 85A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 85A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| HUFA75639P3 |
Виробник: onsemi
Description: MOSFET N-CH 100V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 400 шт
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| HCPL2731WV |
|
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
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| HCPL2731V |
|
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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| HCPL2731SV |
|
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
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| HUFA75637S3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
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Мінімальне замовлення: 800 шт
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| HCPL2731SDV |
|
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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| FQB12N60CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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| FSAV450MTCX |
|
Виробник: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 800MHz
On-State Resistance (Max): 7Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: RGB
Packaging: Tape & Reel (TR)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 800MHz
On-State Resistance (Max): 7Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: RGB
Packaging: Tape & Reel (TR)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
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| HCPL2531V |
|
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
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| HCPL2730SV |
|
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 2CH DARL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300ns, 5µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISOLTR 2.5KV 2CH DARL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300ns, 5µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
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Мінімальне замовлення: 1000 шт
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| HCPL2531SV |
|
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
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Мінімальне замовлення: 1000 шт
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| FQAF58N08 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 44A TO3PF
Description: MOSFET N-CH 80V 44A TO3PF
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| FFA30U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 30A TO-3P
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3P
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: DIODE ARRAY GP 600V 30A TO-3P
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3P
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Мінімальне замовлення: 450 шт
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| FQP17N40 |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 2174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.14 грн |
| 50+ | 115.84 грн |
| 100+ | 104.82 грн |
| 500+ | 80.23 грн |
| 1000+ | 74.41 грн |
| 2000+ | 70.27 грн |
| FQPF6N90 |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 3.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.7A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Description: MOSFET N-CH 900V 3.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.7A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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| FM3560M20X |
|
Виробник: onsemi
Description: MULTIPLEXER 4/5BIT 2WIRE 20SOIC
Description: MULTIPLEXER 4/5BIT 2WIRE 20SOIC
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| FQPF85N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 53A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 26.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 60V 53A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 26.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| FTM3725 |
|
Виробник: onsemi
Description: TRANS 4NPN 40V 1.2A 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SOIC
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1.2A
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Description: TRANS 4NPN 40V 1.2A 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SOIC
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1.2A
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| HUF76639S3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| FQB7N80TM_AM002 |
Виробник: onsemi
Description: MOSFET N-CH 800V 6.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Description: MOSFET N-CH 800V 6.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| FQA7N60 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 7.7A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 600V 7.7A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
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| FQP85N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 85A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 85A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| ISL9R1560PF2 |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 15A TO220F
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 15A
Technology: Avalanche
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE GEN PURP 600V 15A TO220F
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 15A
Technology: Avalanche
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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| FQB46N15TM_AM002 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 45.6A D2PAK
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 210W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 45.6A D2PAK
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 210W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Packaging: Tape & Reel (TR)
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| FQB12N50TM_AM002 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 12.1A D2PAK
Power Dissipation (Max): 3.13W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 6.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Description: MOSFET N-CH 500V 12.1A D2PAK
Power Dissipation (Max): 3.13W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 6.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
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| SGH15N60RUFTU |
|
Виробник: onsemi
Description: IGBT 600V 24A 160W TO3P
Power - Max: 160 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Test Condition: 300V, 15A, 13Ohm, 15V
Switching Energy: 320µJ (on), 356µJ (off)
Td (on/off) @ 25°C: 17ns/44ns
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Current - Collector (Ic) (Max): 24 A
Gate Charge: 42 nC
Description: IGBT 600V 24A 160W TO3P
Power - Max: 160 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Test Condition: 300V, 15A, 13Ohm, 15V
Switching Energy: 320µJ (on), 356µJ (off)
Td (on/off) @ 25°C: 17ns/44ns
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Current - Collector (Ic) (Max): 24 A
Gate Charge: 42 nC
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| FQB47P06TM-AM002 |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 47A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET P-CH 60V 47A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.