| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HCPL0700R2 | onsemi |
 Description: OPTOCOUPLER SGL DARL OUT 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 1µs, 7µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FJA4313OTU | onsemi |
Description: TRANS NPN 250V 17A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 7A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3PN Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 130 W |
на замовлення 1996 шт: термін постачання 21-31 дні (днів) |
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HUF75329G3 | onsemi |
Description: MOSFET N-CH 55V 49A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB65N06TM | onsemi |
Description: MOSFET N-CH 60V 65A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FFB10U120STM | onsemi |
Description: DIODE GEN PURP 1.2KV 10A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SGR20N40LTF | onsemi |
Description: IGBT TRENCH 400V TO-252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A Supplier Device Package: TO-252AA IGBT Type: Trench Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 45 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB11N40CTM | onsemi |
Description: MOSFET N-CH 400V 10.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SGU20N40LTU | onsemi |
Description: IGBT TRENCH 400V IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A Supplier Device Package: IPAK IGBT Type: Trench Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 45 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SGR20N40LTM | onsemi |
Description: IGBT 400V 45W DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A Supplier Device Package: TO-252AA IGBT Type: Trench Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 45 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP65N06 | onsemi |
Description: MOSFET N-CH 60V 65A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSA3259BQX | onsemi |
Description: IC SWITCH SP3T X 2 15OHM 16DQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: 16-DQFN (2.5x3.5) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 3pC Crosstalk: -60dB @ 10MHz Switch Circuit: SP3T Multiplexer/Demultiplexer Circuit: 3:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 6.5ns, 3.7ns Channel Capacitance (CS(off), CD(off)): 3.6pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Obsolete Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP45N15V2 | onsemi |
Description: MOSFET N-CH 150V 45A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V |
на замовлення 595 шт: термін постачання 21-31 дні (днів) |
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FFAF20U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 20A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF10N60C | onsemi |
 Description: MOSFET N-CH 600V 9.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF45N15V2 | onsemi |
Description: MOSFET N-CH 150V 45A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2601WV | onsemi |
Description: OPTOISO 3.75KV OPN COLL 8-MDIP Packaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Open Collector Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-MDIP Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Obsolete Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2601SV | onsemi |
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Obsolete Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJA4210RTU | onsemi |
Description: TRANS PNP 140V 10A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Frequency - Transition: 30MHz Supplier Device Package: TO-3P Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF12N60CT | onsemi |
Description: MOSFET N-CH 600V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RHRP15120 | onsemi |
Description: DIODE STANDARD 1200V 15A TO2202L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB10N60CTM | onsemi |
Description: MOSFET N-CH 600V 9.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V Power Dissipation (Max): 3.13W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1028M | onsemi |
Description: IC RECEIVER 0/2 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/2 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5H0365RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 67% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5H0280RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1027AMX | onsemi |
Description: IC TRANSCEIVER 2/0 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 2/0 Data Rate: 600Mbps Protocol: LVDS Supplier Device Package: 8-SOIC |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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KA5H0280RTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5M0365RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5H0365RTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 67% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5M0365RTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1028MX | onsemi |
Description: IC TRANSCEIVER 0/2 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/2 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 8-SOIC |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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KA5M0280RTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V Supplier Device Package: TO-220F-4L Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15 V Control Features: Soft Start Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUF76633S3S | onsemi |
Description: MOSFET N-CH 100V 39A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP55N10 | onsemi |
Description: MOSFET N-CH 100V 55A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL2601SDV | onsemi |
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Obsolete Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQA44N08 | onsemi |
Description: MOSFET N-CH 80V 49.8A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49.8A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 24.9A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL0701R1V | onsemi |
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 18V Turn On / Turn Off Time (Typ): 300ns, 1.6µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL0701R1 | onsemi |
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 18V Turn On / Turn Off Time (Typ): 300ns, 1.6µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL0701R2 | onsemi |
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 18V Turn On / Turn Off Time (Typ): 300ns, 1.6µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA75333P3 | onsemi |
Description: MOSFET N-CH 55V 66A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA76432S3S | onsemi |
Description: MOSFET N-CH 60V 59A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF12N60C | onsemi |
Description: MOSFET N-CH 600V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MM74C04MX | onsemi |
Description: IC INVERTER 6CH 6-INP 14SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MM74C04M | onsemi |
Description: IC INVERTER 6CH 6-INP 14SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQA44N10 | onsemi |
Description: MOSFET N-CH 100V 48A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HCPL0701 | onsemi |
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 18V Turn On / Turn Off Time (Typ): 300ns, 1.6µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 3422 шт: термін постачання 21-31 дні (днів) |
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FJAF6810ATU | onsemi |
Description: TRANS NPN 750V 10A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V Supplier Device Package: TO-3PF Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJAF6810DYDTBTU | onsemi |
Description: TRANS NPN 750V 10A TO-3PF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5M0380RTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5L0380RTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5H0380RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 67% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
KA5L0380RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FQPF7N60 | onsemi |
Description: MOSFET N-CH 600V 4.3A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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KA5M0380RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA5H0380RTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220F Packaging: Tube Package / Case: TO-220-4 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 67% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP7N60 | onsemi |
Description: MOSFET N-CH 600V 7.4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FQAF11N40 | onsemi |
Description: MOSFET N-CH 400V 8.8A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 4.4A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQP5N90 | onsemi |
Description: MOSFET N-CH 900V 5.4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJAF6810AYDTBTU | onsemi | Description: TRANS NPN 750V 10A TO3PF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQAF65N06 | onsemi |
Description: MOSFET N-CH 60V 49A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 24.5A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB6N80TM | onsemi |
Description: MOSFET N-CH 800V 5.8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V Power Dissipation (Max): 3.13W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| HCPL0700R2 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 76.40 грн |
| FJA4313OTU |
|
Виробник: onsemi
Description: TRANS NPN 250V 17A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 7A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PN
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Description: TRANS NPN 250V 17A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 7A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PN
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 324.54 грн |
| 30+ | 247.38 грн |
| 120+ | 212.04 грн |
| 510+ | 176.88 грн |
| 1020+ | 151.45 грн |
| HUF75329G3 |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 49A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 55V 49A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FQB65N06TM |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 65A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Description: MOSFET N-CH 60V 65A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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| FFB10U120STM |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 10A D2PAK
Description: DIODE GEN PURP 1.2KV 10A D2PAK
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| SGR20N40LTF |
|
Виробник: onsemi
Description: IGBT TRENCH 400V TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
Description: IGBT TRENCH 400V TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
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| FQB11N40CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 10.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Description: MOSFET N-CH 400V 10.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
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| SGU20N40LTU |
|
Виробник: onsemi
Description: IGBT TRENCH 400V IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: IPAK
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
Description: IGBT TRENCH 400V IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: IPAK
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
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| SGR20N40LTM |
|
Виробник: onsemi
Description: IGBT 400V 45W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
Description: IGBT 400V 45W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
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| FQP65N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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| FSA3259BQX |
|
Виробник: onsemi
Description: IC SWITCH SP3T X 2 15OHM 16DQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-DQFN (2.5x3.5)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 3pC
Crosstalk: -60dB @ 10MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 6.5ns, 3.7ns
Channel Capacitance (CS(off), CD(off)): 3.6pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 2
Description: IC SWITCH SP3T X 2 15OHM 16DQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-DQFN (2.5x3.5)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 3pC
Crosstalk: -60dB @ 10MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 6.5ns, 3.7ns
Channel Capacitance (CS(off), CD(off)): 3.6pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 2
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| FQP45N15V2 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
Description: MOSFET N-CH 150V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 214.14 грн |
| 50+ | 86.67 грн |
| 100+ | 83.17 грн |
| 500+ | 77.16 грн |
| FFAF20U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 20A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 20A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| FQPF10N60C | |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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| FQPF45N15V2 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 45A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
Description: MOSFET N-CH 150V 45A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
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| HCPL2601WV |
|
Виробник: onsemi
Description: OPTOISO 3.75KV OPN COLL 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 3.75KV OPN COLL 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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| HCPL2601SV |
|
Виробник: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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| FJA4210RTU |
|
Виробник: onsemi
Description: TRANS PNP 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Description: TRANS PNP 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
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| FQPF12N60CT |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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| RHRP15120 |
|
Виробник: onsemi
Description: DIODE STANDARD 1200V 15A TO2202L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STANDARD 1200V 15A TO2202L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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| FQB10N60CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 9.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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| FIN1028M |
|
Виробник: onsemi
Description: IC RECEIVER 0/2 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
Description: IC RECEIVER 0/2 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
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| KA5H0365RYDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| KA5H0280RYDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Description: IC OFFLINE SW MULT TOP TO220F
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| FIN1027AMX |
|
Виробник: onsemi
Description: IC TRANSCEIVER 2/0 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 2/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
Description: IC TRANSCEIVER 2/0 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 2/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 24.52 грн |
| 5000+ | 23.00 грн |
| 7500+ | 22.70 грн |
| 12500+ | 20.98 грн |
| 17500+ | 20.79 грн |
| 25000+ | 20.62 грн |
| KA5H0280RTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Description: IC OFFLINE SW MULT TOP TO220F
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| KA5M0365RYDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| KA5H0365RTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| KA5M0365RTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| FIN1028MX |
|
Виробник: onsemi
Description: IC TRANSCEIVER 0/2 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
Description: IC TRANSCEIVER 0/2 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 36.60 грн |
| 5000+ | 34.39 грн |
| 7500+ | 33.97 грн |
| 12500+ | 31.43 грн |
| KA5M0280RTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 8.8V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
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| HUF76633S3S |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
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| FQP55N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 100V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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| HCPL2601SDV |
|
Виробник: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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| FQA44N08 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 49.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 24.9A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Description: MOSFET N-CH 80V 49.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 24.9A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
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| HCPL0701R1V |
|
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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| HCPL0701R1 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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| HCPL0701R2 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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| HUFA75333P3 |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 66A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 55V 66A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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| HUFA76432S3S |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Description: MOSFET N-CH 60V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
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| FQPF12N60C |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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| MM74C04MX |
|
Виробник: onsemi
Description: IC INVERTER 6CH 6-INP 14SOIC
Description: IC INVERTER 6CH 6-INP 14SOIC
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| MM74C04M |
|
Виробник: onsemi
Description: IC INVERTER 6CH 6-INP 14SOIC
Description: IC INVERTER 6CH 6-INP 14SOIC
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| FQA44N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 48A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 48A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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| HCPL0701 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 3422 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.50 грн |
| 50+ | 120.18 грн |
| 100+ | 112.10 грн |
| 500+ | 91.69 грн |
| 1000+ | 87.29 грн |
| 2000+ | 83.56 грн |
| FJAF6810ATU |
Виробник: onsemi
Description: TRANS NPN 750V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 60 W
Description: TRANS NPN 750V 10A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 60 W
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| FJAF6810DYDTBTU |
|
Виробник: onsemi
Description: TRANS NPN 750V 10A TO-3PF
Description: TRANS NPN 750V 10A TO-3PF
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| KA5M0380RTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| KA5L0380RTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| KA5H0380RYDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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од. на суму грн.
| KA5L0380RYDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| FQPF7N60 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 4.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Description: MOSFET N-CH 600V 4.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.42 грн |
| KA5M0380RYDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Part Status: Obsolete
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| KA5H0380RTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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| FQP7N60 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Description: MOSFET N-CH 600V 7.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
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| FQAF11N40 |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 8.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.4A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 8.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.4A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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| FQP5N90 |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 5.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 900V 5.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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| FJAF6810AYDTBTU |
Виробник: onsemi
Description: TRANS NPN 750V 10A TO3PF
Description: TRANS NPN 750V 10A TO3PF
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| FQAF65N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 49A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 24.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Description: MOSFET N-CH 60V 49A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 24.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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| FQB6N80TM |
|
Виробник: onsemi
Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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од. на суму грн.