| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MBR2550CT | onsemi |
 Description: DIODE ARR SCHOT 50V 12.5A TO2203Current - Reverse Leakage @ Vr: 1 mA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Not For New Designs Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 12.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 797 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
MBR2560CT | onsemi |
Description: DIODE ARR SCHOT 60V 12.5A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12.5A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
на замовлення 1656 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
HUF76629D3ST | onsemi |
Description: MOSFET N-CH 100V 20A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
 |
FQB44N10TM | onsemi |
Description: MOSFET N-CH 100V 43.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Power Dissipation (Max): 3.75W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
FQP6N60 | onsemi |
Description: MOSFET N-CH 600V 6.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FJA4310OTU | onsemi |
Description: TRANS NPN 140V 10A TO3P Power - Max: 100 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 10 A Part Status: Obsolete Supplier Device Package: TO-3P Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FQAF22P10 | onsemi |
Description: MOSFET P-CH 100V 16.6A TO3PF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||
|
|
FQAF33N10L | onsemi |
Description: MOSFET N-CH 100V 25.8A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 12.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||
 |
FQA9P25 | onsemi |
Description: MOSFET P-CH 250V 10.5A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FQA22P10 | onsemi |
Description: MOSFET P-CH 100V 24A TO3PN Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| KA7630TS | onsemi |
Description: IC REG LINEAR 5.1V/8V/12V 10SIP Protection Features: Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, - Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5.1V, 8V, 12V Supplier Device Package: 10-SIP H/S Number of Regulators: 3 Voltage - Input (Max): 20V Current - Quiescent (Iq): 2 mA Output Configuration: Positive Operating Temperature: 0°C ~ 125°C Current - Output: 500mA, 500mA, 1A Mounting Type: Through Hole Output Type: Fixed Package / Case: 10-SIP, 10-SIPH Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KA7632 | onsemi |
Description: IC REG LIN 3.3V/5.1V/8V 10SIP Protection Features: Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA Part Status: Obsolete Control Features: Enable, Reset Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V Supplier Device Package: 10-SIP H/S Number of Regulators: 3 Voltage - Input (Max): 20V Current - Quiescent (Iq): 2 mA Output Configuration: Positive Operating Temperature: 0°C ~ 125°C Current - Output: 500mA, 1A, 500mA Mounting Type: Through Hole Output Type: Fixed Package / Case: 10-SIP, 10-SIPH Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KA7630 | onsemi |
Description: IC REG LINEAR 5.1V/8V/12V 10SIP Protection Features: Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, - Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5.1V, 8V, 12V Supplier Device Package: 10-SIP H/S Number of Regulators: 3 Voltage - Input (Max): 20V Current - Quiescent (Iq): 2 mA Output Configuration: Positive Operating Temperature: 0°C ~ 125°C Current - Output: 500mA, 500mA, 1A Mounting Type: Through Hole Output Type: Fixed Package / Case: 10-SIP, 10-SIPH Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
FSAV331MTCX | onsemi |
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP Number of Channels: 2 Part Status: Obsolete Multiplexer/Demultiplexer Circuit: 4:1 Voltage - Supply, Single (V+): 4.75V ~ 5.25V Supplier Device Package: 16-TSSOP -3db Bandwidth: 300MHz On-State Resistance (Max): 10Ohm Applications: Video Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FQB19N20TM | onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
HGTP2N120CN | onsemi |
Description: IGBT NPT 1200V 13A TO-220-3 Power - Max: 104 W Current - Collector Pulsed (Icm): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 13 A Part Status: Obsolete Gate Charge: 30 nC Test Condition: 960V, 2.6A, 51Ohm, 15V Switching Energy: 96µJ (on), 355µJ (off) Td (on/off) @ 25°C: 25ns/205ns IGBT Type: NPT Supplier Device Package: TO-220-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||
|
|
FQA33N10 | onsemi |
Description: MOSFET N-CH 100V 36A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||
 |
FFPF40U60STU | onsemi |
Description: DIODE AVAL 600V 40A TO220F2L Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Avalanche Current - Average Rectified (Io): 40A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
 |
FJAF6806DYDTBTU | onsemi |
Description: TRANS NPN 750V 6A TO3PF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FFP30U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 30A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
 |
FQA12P20 | onsemi |
Description: MOSFET P-CH 200V 12.6A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FXL4245MPX | onsemi |
Description: IC XLTR VL BIDIR 24-MLP Features: Power-Off Protection Packaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-WQFN (3.5x4.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Part Status: Active Number of Circuits: 1 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
FQPF44N10 | onsemi |
Description: MOSFET N-CH 100V 27A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FFPF30U60DNTU | onsemi |
Description: DIODE ARR AVAL 600V 30A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
 |
FQP12P20 | onsemi |
Description: MOSFET P-CH 200V 11.5A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FQA33N10L | onsemi |
Description: MOSFET N-CH 100V 36A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||
 |
FFPF10U120STU | onsemi |
Description: DIODE GEN PURP 1.2KV 10A TO220F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FQP10N60C | onsemi |
Description: MOSFET N-CH 600V 9.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
FQP13N50C | onsemi |
Description: MOSFET N-CH 500V 13A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
FQA19N20L | onsemi |
Description: MOSFET N-CH 200V 25A TO3P Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||
|
|
HUF75333S3ST | onsemi |
Description: MOSFET N-CH 55V 66A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
 |
FSA2267AL10X | onsemi |
Description: IC SWITCH DUAL SPDT 10MICROPAK Number of Channels: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 2.3V ~ 4.3V Supplier Device Package: 10-MicroPak™ -3db Bandwidth: 45MHz On-State Resistance (Max): 350mOhm (Typ) Applications: Audio Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FQB4N90TM | onsemi |
Description: MOSFET N-CH 900V 4.2A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HUFA75329S3ST | onsemi |
Description: MOSFET N-CH 55V 49A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
|
|
FQP8N80C | onsemi |
Description: MOSFET N-CH 800V 8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
HUF76633P3 | onsemi |
Description: MOSFET N-CH 100V 39A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||
|
|
FQPF10N60CYDTU | onsemi |
Description: MOSFET N-CH 600V 9.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
HUFA76432P3 | onsemi |
Description: MOSFET N-CH 60V 59A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||
 |
HCPL0452V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Current Transfer Ratio (Min): 19% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.45V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Box Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 450ns, 300ns Voltage - Output (Max): 20V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 50% @ 16mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FSTD16211MTDX | onsemi |
Description: IC BUS SWITCH 12 X 1:1 56TSSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
 |
FSTD16861MTD | onsemi |
Description: IC BUS SWITCH 10 X 1:1 48TSSOP Part Status: Obsolete Supplier Device Package: 48-TSSOP Voltage Supply Source: Single Supply Independent Circuits: 2 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 10 x 1:1 Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FSTD16211MTD | onsemi |
Description: IC BUS SWITCH 12 X 1:1 56TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
HCPL0501 | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 4139 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
HCPL0500 | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 7% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 500ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 1377 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
HCPL0501R2 | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 102500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
FSUSB11MTCX | onsemi |
Description: IC USB SWITCH DUAL 1X1 14TSSOP Number of Channels: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 1.65V ~ 5.5V Supplier Device Package: 14-TSSOP -3db Bandwidth: 350MHz On-State Resistance (Max): 1.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Features: Break-Before-Make, USB 1.1 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FQP58N08 | onsemi |
Description: MOSFET N-CH 80V 57.5A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FQB7N60TM | onsemi |
Description: MOSFET N-CH 600V 7.4A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0501R1 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Obsolete Turn On / Turn Off Time (Typ): 450ns, 300ns Voltage - Output (Max): 20V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 50% @ 16mA Current Transfer Ratio (Min): 19% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.45V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Transistor with Base Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
 |
HCPL0501R1V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Mounting Type: Surface Mount Output Type: Transistor with Base Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Turn On / Turn Off Time (Typ): 450ns, 300ns Voltage - Output (Max): 20V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 50% @ 16mA Current Transfer Ratio (Min): 19% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.45V Operating Temperature: -40°C ~ 85°C Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0500R1 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 450ns, 500ns Voltage - Output (Max): 20V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 50% @ 16mA Current Transfer Ratio (Min): 7% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.45V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Transistor with Base Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0700R1V | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 1µs, 7µs Voltage - Output (Max): 7V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 2600% @ 1.6mA Current Transfer Ratio (Min): 300% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Darlington with Base Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FQB32N20CTM | onsemi |
Description: MOSFET N-CH 200V 28A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0700R2V | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 1µs, 7µs Voltage - Output (Max): 7V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 2600% @ 1.6mA Current Transfer Ratio (Min): 300% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Darlington with Base Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
FQAF16N25C | onsemi |
Description: MOSFET N-CH 250V 11.4A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0452R1V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 450ns, 300ns Voltage - Output (Max): 20V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 50% @ 16mA Current Transfer Ratio (Min): 19% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.45V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0452R1 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 450ns, 300ns Voltage - Output (Max): 20V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 50% @ 16mA Current Transfer Ratio (Min): 19% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.45V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0452R2 | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 450ns, 300ns Voltage - Output (Max): 20V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 50% @ 16mA Current Transfer Ratio (Min): 19% @ 16mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.45V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0500R1V | onsemi |
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
HCPL0700R1 | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 1µs, 7µs Voltage - Output (Max): 7V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 2600% @ 1.6mA Current Transfer Ratio (Min): 300% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Darlington with Base Package / Case: 8-SOIC (0.154", 3.90mm Width) |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR2550CT |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 50V 12.5A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Not For New Designs
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 50V 12.5A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Not For New Designs
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 140.35 грн |
| 50+ | 64.77 грн |
| 100+ | 62.15 грн |
| 500+ | 54.25 грн |
| MBR2560CT |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 60V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE ARR SCHOT 60V 12.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 1656 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 158.59 грн |
| 50+ | 67.53 грн |
| 100+ | 67.48 грн |
| 500+ | 58.72 грн |
| 1000+ | 57.22 грн |
| HUF76629D3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FQB44N10TM |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 74.39 грн |
| 1600+ | 66.60 грн |
| 2400+ | 64.40 грн |
| FQP6N60 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 6.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 600V 6.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FJA4310OTU |
|
Виробник: onsemi
Description: TRANS NPN 140V 10A TO3P
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: TRANS NPN 140V 10A TO3P
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FQAF22P10 |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 16.6A TO3PF
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Description: MOSFET P-CH 100V 16.6A TO3PF
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| FQAF33N10L |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 25.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 12.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 100V 25.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 12.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| FQA9P25 |
|
Виробник: onsemi
Description: MOSFET P-CH 250V 10.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET P-CH 250V 10.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FQA22P10 |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 24A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET P-CH 100V 24A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| KA7630TS |
|
Виробник: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Protection Features: Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Supplier Device Package: 10-SIP H/S
Number of Regulators: 3
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 500mA, 500mA, 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: 10-SIP, 10-SIPH
Packaging: Tube
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Protection Features: Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Supplier Device Package: 10-SIP H/S
Number of Regulators: 3
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 500mA, 500mA, 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: 10-SIP, 10-SIPH
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| KA7632 |
|
Виробник: onsemi
Description: IC REG LIN 3.3V/5.1V/8V 10SIP
Protection Features: Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA
Part Status: Obsolete
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V
Supplier Device Package: 10-SIP H/S
Number of Regulators: 3
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 500mA, 1A, 500mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: 10-SIP, 10-SIPH
Packaging: Tube
Description: IC REG LIN 3.3V/5.1V/8V 10SIP
Protection Features: Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA
Part Status: Obsolete
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V
Supplier Device Package: 10-SIP H/S
Number of Regulators: 3
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 500mA, 1A, 500mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: 10-SIP, 10-SIPH
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| KA7630 |
|
Виробник: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Protection Features: Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Supplier Device Package: 10-SIP H/S
Number of Regulators: 3
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 500mA, 500mA, 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: 10-SIP, 10-SIPH
Packaging: Tube
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Protection Features: Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Supplier Device Package: 10-SIP H/S
Number of Regulators: 3
Voltage - Input (Max): 20V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 500mA, 500mA, 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: 10-SIP, 10-SIPH
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FSAV331MTCX |
|
Виробник: onsemi
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FQB19N20TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Description: MOSFET N-CH 200V 19.4A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 65.02 грн |
| HGTP2N120CN |
|
Виробник: onsemi
Description: IGBT NPT 1200V 13A TO-220-3
Power - Max: 104 W
Current - Collector Pulsed (Icm): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 30 nC
Test Condition: 960V, 2.6A, 51Ohm, 15V
Switching Energy: 96µJ (on), 355µJ (off)
Td (on/off) @ 25°C: 25ns/205ns
IGBT Type: NPT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: IGBT NPT 1200V 13A TO-220-3
Power - Max: 104 W
Current - Collector Pulsed (Icm): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 30 nC
Test Condition: 960V, 2.6A, 51Ohm, 15V
Switching Energy: 96µJ (on), 355µJ (off)
Td (on/off) @ 25°C: 25ns/205ns
IGBT Type: NPT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| FQA33N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FFPF40U60STU |
|
Виробник: onsemi
Description: DIODE AVAL 600V 40A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Avalanche
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE AVAL 600V 40A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Avalanche
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FJAF6806DYDTBTU |
|
Виробник: onsemi
Description: TRANS NPN 750V 6A TO3PF
Description: TRANS NPN 750V 6A TO3PF
товару немає в наявності
В кошику
од. на суму грн.
| FFP30U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FQA12P20 |
|
Виробник: onsemi
Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FXL4245MPX |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR 24-MLP
Features: Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-WQFN (3.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 24-MLP
Features: Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-WQFN (3.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 24.55 грн |
| 6000+ | 23.06 грн |
| FQPF44N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 27A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 27A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FFPF30U60DNTU |
|
Виробник: onsemi
Description: DIODE ARR AVAL 600V 30A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE ARR AVAL 600V 30A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FQP12P20 |
|
Виробник: onsemi
Description: MOSFET P-CH 200V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 200V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FQA33N10L |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FFPF10U120STU |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 10A TO220F
Description: DIODE GEN PURP 1.2KV 10A TO220F
товару немає в наявності
В кошику
од. на суму грн.
| FQP10N60C |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FQP13N50C |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FQA19N20L |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 25A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 200V 25A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| HUF75333S3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 66A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 66A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FSA2267AL10X |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FQB4N90TM |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 4.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 900V 4.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику
од. на суму грн.
| HUFA75329S3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 49A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 49A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FQP8N80C |
|
Виробник: onsemi
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 279.90 грн |
| 50+ | 137.52 грн |
| 100+ | 124.77 грн |
| 500+ | 96.12 грн |
| HUF76633P3 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 39A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 39A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| FQPF10N60CYDTU |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| HUFA76432P3 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 59A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 59A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| HCPL0452V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
товару немає в наявності
В кошику
од. на суму грн.
| FSTD16211MTDX |
|
Виробник: onsemi
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FSTD16861MTD |
|
Виробник: onsemi
Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Part Status: Obsolete
Supplier Device Package: 48-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 10 x 1:1
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Part Status: Obsolete
Supplier Device Package: 48-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 10 x 1:1
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FSTD16211MTD |
|
Виробник: onsemi
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0501 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 4139 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 94.36 грн |
| 10+ | 64.22 грн |
| 100+ | 48.21 грн |
| 500+ | 38.56 грн |
| 1000+ | 36.38 грн |
| 3000+ | 33.58 грн |
| HCPL0500 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 1377 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 94.36 грн |
| 50+ | 52.24 грн |
| 100+ | 48.25 грн |
| 500+ | 38.59 грн |
| 1000+ | 36.41 грн |
| HCPL0501R2 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 102500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 39.48 грн |
| 5000+ | 36.37 грн |
| FSUSB11MTCX |
|
Виробник: onsemi
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 350MHz
On-State Resistance (Max): 1.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Break-Before-Make, USB 1.1
Packaging: Tape & Reel (TR)
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 350MHz
On-State Resistance (Max): 1.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Break-Before-Make, USB 1.1
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FQP58N08 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 57.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 80V 57.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FQB7N60TM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A D2PAK
Description: MOSFET N-CH 600V 7.4A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0501R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| HCPL0501R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0500R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 500ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 7% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 500ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 7% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| HCPL0700R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FQB32N20CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0700R2V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FQAF16N25C |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| HCPL0452R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0452R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0452R2 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0500R1V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0700R1 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
товару немає в наявності
В кошику
од. на суму грн.