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FFPF40U60STU FFPF40U60STU onsemi FFPF40U60S.pdf Description: DIODE AVAL 600V 40A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Avalanche
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FJAF6806DYDTBTU FJAF6806DYDTBTU onsemi FJAF6806D.pdf Description: TRANS NPN 750V 6A TO3PF
товару немає в наявності
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FFP30U60DNTU FFP30U60DNTU onsemi FFP30U60DN.pdf Description: DIODE ARRAY GP 600V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQA12P20 FQA12P20 onsemi FQA12P20.pdf Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
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FXL4245MPX FXL4245MPX onsemi fxl4245-d.pdf Description: IC XLTR VL BIDIR 24-MLP
Features: Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-WQFN (3.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+26.49 грн
6000+24.89 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FQPF44N10 FQPF44N10 onsemi FQPF44N10.pdf Description: MOSFET N-CH 100V 27A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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FFPF30U60DNTU FFPF30U60DNTU onsemi FFPF30U60DN.pdf Description: DIODE ARR AVAL 600V 30A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQP12P20 FQP12P20 onsemi fqp12p20-d.pdf Description: MOSFET P-CH 200V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
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HUFA76429S3S HUFA76429S3S onsemi HUFA76429.pdf Description: MOSFET N-CH 60V 47A D2PAK
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
FQA33N10L FQA33N10L onsemi FQA33N10L.pdf Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
FFPF10U120STU FFPF10U120STU onsemi FFPF10U120S.pdf Description: DIODE GEN PURP 1.2KV 10A TO220F
товару немає в наявності
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FQP10N60C FQP10N60C onsemi fqp10n60c-d.pdf Description: MOSFET N-CH 600V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HUF76429S3S HUF76429S3S onsemi HUF76429S3S%2C%20HUF76429P3%5B1%5D.pdf Description: MOSFET N-CH 60V 47A D2PAK
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
FQP13N50C FQP13N50C onsemi fqp13n50c-d.pdf Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQA19N20L FQA19N20L onsemi FQA19N20L.pdf Description: MOSFET N-CH 200V 25A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
HUF75333S3ST HUF75333S3ST onsemi HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf Description: MOSFET N-CH 55V 66A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FSA2267AL10X FSA2267AL10X onsemi Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
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FQB4N90TM FQB4N90TM onsemi FQB4N90.pdf Description: MOSFET N-CH 900V 4.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
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HUFA75329S3ST HUFA75329S3ST onsemi HUFA75329G3%2CP3%2CS3S.pdf Description: MOSFET N-CH 55V 49A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQP8N80C FQP8N80C onsemi FQPF8N80C-D.pdf Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
2+289.42 грн
10+183.56 грн
50+142.72 грн
100+121.61 грн
500+100.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
HUF76633P3 HUF76633P3 onsemi HUF76633P3%2CS3S.pdf Description: MOSFET N-CH 100V 39A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
FQPF10N60CYDTU FQPF10N60CYDTU onsemi fqp10n60c-d.pdf Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
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HUFA76432P3 HUFA76432P3 onsemi HUFA76432P3%2CS3S.pdf Description: MOSFET N-CH 60V 59A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
HCPL0452V HCPL0452V onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
товару немає в наявності
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FSTD16211MTDX FSTD16211MTDX onsemi ONSM-S-A0003586458-1.pdf?t.download=true&u=5oefqw Description: IC BUS SWITCH 12 X 1:1 56TSSOP
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FSTD16861MTD FSTD16861MTD onsemi fstd16861-d.pdf Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Part Status: Obsolete
Supplier Device Package: 48-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 10 x 1:1
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
товару немає в наявності
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FSTD16211MTD FSTD16211MTD onsemi ONSM-S-A0003586458-1.pdf?t.download=true&u=5oefqw Description: IC BUS SWITCH 12 X 1:1 56TSSOP
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HCPL0501 HCPL0501 onsemi hcpl0534-d.pdf Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 4024 шт:
термін постачання 21-31 дні (днів)
4+97.53 грн
10+66.28 грн
100+49.72 грн
500+39.77 грн
1000+37.52 грн
3000+34.63 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
HCPL0500 HCPL0500 onsemi hcpl0534-d.pdf Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 1377 шт:
термін постачання 21-31 дні (днів)
4+97.53 грн
50+53.88 грн
100+49.76 грн
500+39.80 грн
1000+37.55 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
HCPL0501R2 HCPL0501R2 onsemi hcpl0534-d.pdf Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 97500 шт:
термін постачання 21-31 дні (днів)
2500+40.72 грн
5000+37.51 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FSUSB11MTCX FSUSB11MTCX onsemi fsusb11-d.pdf Description: IC USB SWITCH DUAL 1X1 14TSSOP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 350MHz
On-State Resistance (Max): 1.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Break-Before-Make, USB 1.1
Packaging: Tape & Reel (TR)
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FQP58N08 FQP58N08 onsemi FQP58N08.pdf Description: MOSFET N-CH 80V 57.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FQB7N60TM FQB7N60TM onsemi fqi7n60-d.pdf Description: MOSFET N-CH 600V 7.4A D2PAK
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HCPL0501R1 HCPL0501R1 onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HCPL0501R1V HCPL0501R1V onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
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В кошику  од. на суму  грн.
HCPL0500R1 HCPL0500R1 onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 500ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 7% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HCPL0700R1V HCPL0700R1V onsemi hcpl0731-d.pdf Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FQB32N20CTM FQB32N20CTM onsemi FQB32N20C,%20FQI32N20C.pdf Description: MOSFET N-CH 200V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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HCPL0700R2V HCPL0700R2V onsemi hcpl0731-d.pdf Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FQAF16N25C FQAF16N25C onsemi FQAF16N25C.pdf Description: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
HCPL0452R1V HCPL0452R1V onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
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HCPL0452R1 HCPL0452R1 onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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HCPL0452R2 HCPL0452R2 onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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HCPL0500R1V HCPL0500R1V onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
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HCPL0700R1 HCPL0700R1 onsemi hcpl0731-d.pdf Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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HCPL0452R2V HCPL0452R2V onsemi hcpl0534-d.pdf Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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В кошику  од. на суму  грн.
HCPL0700R2 HCPL0700R2 onsemi hcpl0731-d.pdf Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+72.99 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FJA4313OTU FJA4313OTU onsemi fja4313-d.pdf Description: TRANS NPN 250V 17A TO3PN
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Active
Supplier Device Package: TO-3PN
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 7A, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
2+310.04 грн
30+236.32 грн
120+202.57 грн
510+168.98 грн
1020+144.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
HUF75329G3 HUF75329G3 onsemi HUF75329(G,P,S)3.pdf Description: MOSFET N-CH 55V 49A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
FFB10U120STM FFB10U120STM onsemi FFB10U120S.pdf Description: DIODE GEN PURP 1.2KV 10A D2PAK
товару немає в наявності
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SGR20N40LTF SGR20N40LTF onsemi SGU20N40L%2CSGR20N40L.pdf Description: IGBT TRENCH 400V TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
FQB11N40CTM FQB11N40CTM onsemi fqb11n40c-d.pdf Description: MOSFET N-CH 400V 10.5A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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SGU20N40LTU SGU20N40LTU onsemi SGU20N40L%2CSGR20N40L.pdf Description: IGBT TRENCH 400V IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: IPAK
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
товару немає в наявності
 Мінімальне замовлення: 5040 шт
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SGR20N40LTM SGR20N40LTM onsemi SGU20N40L,SGR20N40L.pdf Description: IGBT 400V 45W DPAK
Power - Max: 45 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQP65N06 FQP65N06 onsemi fqp65n06-d.pdf Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FSA3259BQX FSA3259BQX onsemi FAIRS43447-1.pdf?t.download=true&u=5oefqw Description: IC SWITCH SP3T X 2 15OHM 16DQFN
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 3.6pF
Switch Time (Ton, Toff) (Max): 6.5ns, 3.7ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: SP3T
Crosstalk: -60dB @ 10MHz
Charge Injection: 3pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 16-DQFN (2.5x3.5)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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FQP45N15V2 FQP45N15V2 onsemi fqpf45n15v2-d.pdf Description: MOSFET N-CH 150V 45A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 813 шт:
термін постачання 21-31 дні (днів)
2+227.57 грн
50+109.49 грн
100+98.88 грн
500+75.36 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FFAF20U60DNTU FFAF20U60DNTU onsemi FFAF20U60DN.pdf Description: DIODE ARRAY GP 600V 20A TO-3PF
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
FQPF10N60C FQPF10N60C onsemi fqp10n60c-d.pdf description Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQPF45N15V2 FQPF45N15V2 onsemi fqpf45n15v2-d.pdf Description: MOSFET N-CH 150V 45A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
FFPF40U60STU FFPF40U60S.pdf
FFPF40U60STU
Виробник: onsemi
Description: DIODE AVAL 600V 40A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Avalanche
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FJAF6806DYDTBTU FJAF6806D.pdf
FJAF6806DYDTBTU
Виробник: onsemi
Description: TRANS NPN 750V 6A TO3PF
товару немає в наявності
В кошику  од. на суму  грн.
FFP30U60DNTU FFP30U60DN.pdf
FFP30U60DNTU
Виробник: onsemi
Description: DIODE ARRAY GP 600V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQA12P20 FQA12P20.pdf
FQA12P20
Виробник: onsemi
Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FXL4245MPX fxl4245-d.pdf
FXL4245MPX
Виробник: onsemi
Description: IC XLTR VL BIDIR 24-MLP
Features: Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-WQFN (3.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+26.49 грн
6000+24.89 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FQPF44N10 FQPF44N10.pdf
FQPF44N10
Виробник: onsemi
Description: MOSFET N-CH 100V 27A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 13.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FFPF30U60DNTU FFPF30U60DN.pdf
FFPF30U60DNTU
Виробник: onsemi
Description: DIODE ARR AVAL 600V 30A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQP12P20 fqp12p20-d.pdf
FQP12P20
Виробник: onsemi
Description: MOSFET P-CH 200V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
HUFA76429S3S HUFA76429.pdf
HUFA76429S3S
Виробник: onsemi
Description: MOSFET N-CH 60V 47A D2PAK
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
FQA33N10L FQA33N10L.pdf
FQA33N10L
Виробник: onsemi
Description: MOSFET N-CH 100V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
FFPF10U120STU FFPF10U120S.pdf
FFPF10U120STU
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 10A TO220F
товару немає в наявності
В кошику  од. на суму  грн.
FQP10N60C fqp10n60c-d.pdf
FQP10N60C
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HUF76429S3S HUF76429S3S%2C%20HUF76429P3%5B1%5D.pdf
HUF76429S3S
Виробник: onsemi
Description: MOSFET N-CH 60V 47A D2PAK
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
FQP13N50C fqp13n50c-d.pdf
FQP13N50C
Виробник: onsemi
Description: MOSFET N-CH 500V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQA19N20L FQA19N20L.pdf
FQA19N20L
Виробник: onsemi
Description: MOSFET N-CH 200V 25A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
HUF75333S3ST HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf
HUF75333S3ST
Виробник: onsemi
Description: MOSFET N-CH 55V 66A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FSA2267AL10X
FSA2267AL10X
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FQB4N90TM FQB4N90.pdf
FQB4N90TM
Виробник: onsemi
Description: MOSFET N-CH 900V 4.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
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HUFA75329S3ST HUFA75329G3%2CP3%2CS3S.pdf
HUFA75329S3ST
Виробник: onsemi
Description: MOSFET N-CH 55V 49A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FQP8N80C FQPF8N80C-D.pdf
FQP8N80C
Виробник: onsemi
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+289.42 грн
10+183.56 грн
50+142.72 грн
100+121.61 грн
500+100.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
HUF76633P3 HUF76633P3%2CS3S.pdf
HUF76633P3
Виробник: onsemi
Description: MOSFET N-CH 100V 39A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
FQPF10N60CYDTU fqp10n60c-d.pdf
FQPF10N60CYDTU
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
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HUFA76432P3 HUFA76432P3%2CS3S.pdf
HUFA76432P3
Виробник: onsemi
Description: MOSFET N-CH 60V 59A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
HCPL0452V hcpl0534-d.pdf
HCPL0452V
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
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FSTD16211MTDX ONSM-S-A0003586458-1.pdf?t.download=true&u=5oefqw
FSTD16211MTDX
Виробник: onsemi
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FSTD16861MTD fstd16861-d.pdf
FSTD16861MTD
Виробник: onsemi
Description: IC BUS SWITCH 10 X 1:1 48TSSOP
Part Status: Obsolete
Supplier Device Package: 48-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 10 x 1:1
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
товару немає в наявності
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FSTD16211MTD ONSM-S-A0003586458-1.pdf?t.download=true&u=5oefqw
FSTD16211MTD
Виробник: onsemi
Description: IC BUS SWITCH 12 X 1:1 56TSSOP
товару немає в наявності
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HCPL0501 hcpl0534-d.pdf
HCPL0501
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 4024 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+97.53 грн
10+66.28 грн
100+49.72 грн
500+39.77 грн
1000+37.52 грн
3000+34.63 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
HCPL0500 hcpl0534-d.pdf
HCPL0500
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 1377 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+97.53 грн
50+53.88 грн
100+49.76 грн
500+39.80 грн
1000+37.55 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
HCPL0501R2 hcpl0534-d.pdf
HCPL0501R2
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 97500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+40.72 грн
5000+37.51 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FSUSB11MTCX fsusb11-d.pdf
FSUSB11MTCX
Виробник: onsemi
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 350MHz
On-State Resistance (Max): 1.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Break-Before-Make, USB 1.1
Packaging: Tape & Reel (TR)
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FQP58N08 FQP58N08.pdf
FQP58N08
Виробник: onsemi
Description: MOSFET N-CH 80V 57.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FQB7N60TM fqi7n60-d.pdf
FQB7N60TM
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A D2PAK
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HCPL0501R1 hcpl0534-d.pdf
HCPL0501R1
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HCPL0501R1V hcpl0534-d.pdf
HCPL0501R1V
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Obsolete
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HCPL0500R1 hcpl0534-d.pdf
HCPL0500R1
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 500ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 7% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
HCPL0700R1V hcpl0731-d.pdf
HCPL0700R1V
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FQB32N20CTM FQB32N20C,%20FQI32N20C.pdf
FQB32N20CTM
Виробник: onsemi
Description: MOSFET N-CH 200V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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HCPL0700R2V hcpl0731-d.pdf
HCPL0700R2V
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FQAF16N25C FQAF16N25C.pdf
FQAF16N25C
Виробник: onsemi
Description: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
HCPL0452R1V hcpl0534-d.pdf
HCPL0452R1V
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
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HCPL0452R1 hcpl0534-d.pdf
HCPL0452R1
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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HCPL0452R2 hcpl0534-d.pdf
HCPL0452R2
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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HCPL0500R1V hcpl0534-d.pdf
HCPL0500R1V
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
товару немає в наявності
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HCPL0700R1 hcpl0731-d.pdf
HCPL0700R1
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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HCPL0452R2V hcpl0534-d.pdf
HCPL0452R2V
Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 450ns, 300ns
Voltage - Output (Max): 20V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 50% @ 16mA
Current Transfer Ratio (Min): 19% @ 16mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.45V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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HCPL0700R2 hcpl0731-d.pdf
HCPL0700R2
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 1µs, 7µs
Voltage - Output (Max): 7V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 300% @ 1.6mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+72.99 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FJA4313OTU fja4313-d.pdf
FJA4313OTU
Виробник: onsemi
Description: TRANS NPN 250V 17A TO3PN
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Active
Supplier Device Package: TO-3PN
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 7A, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+310.04 грн
30+236.32 грн
120+202.57 грн
510+168.98 грн
1020+144.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
HUF75329G3 HUF75329(G,P,S)3.pdf
HUF75329G3
Виробник: onsemi
Description: MOSFET N-CH 55V 49A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
FFB10U120STM FFB10U120S.pdf
FFB10U120STM
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 10A D2PAK
товару немає в наявності
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SGR20N40LTF SGU20N40L%2CSGR20N40L.pdf
SGR20N40LTF
Виробник: onsemi
Description: IGBT TRENCH 400V TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
товару немає в наявності
Мінімальне замовлення: 2000 шт
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FQB11N40CTM fqb11n40c-d.pdf
FQB11N40CTM
Виробник: onsemi
Description: MOSFET N-CH 400V 10.5A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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SGU20N40LTU SGU20N40L%2CSGR20N40L.pdf
SGU20N40LTU
Виробник: onsemi
Description: IGBT TRENCH 400V IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Supplier Device Package: IPAK
IGBT Type: Trench
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 45 W
товару немає в наявності
Мінімальне замовлення: 5040 шт
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SGR20N40LTM SGU20N40L,SGR20N40L.pdf
SGR20N40LTM
Виробник: onsemi
Description: IGBT 400V 45W DPAK
Power - Max: 45 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Part Status: Obsolete
IGBT Type: Trench
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQP65N06 fqp65n06-d.pdf
FQP65N06
Виробник: onsemi
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FSA3259BQX FAIRS43447-1.pdf?t.download=true&u=5oefqw
FSA3259BQX
Виробник: onsemi
Description: IC SWITCH SP3T X 2 15OHM 16DQFN
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 3.6pF
Switch Time (Ton, Toff) (Max): 6.5ns, 3.7ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: SP3T
Crosstalk: -60dB @ 10MHz
Charge Injection: 3pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 16-DQFN (2.5x3.5)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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FQP45N15V2 fqpf45n15v2-d.pdf
FQP45N15V2
Виробник: onsemi
Description: MOSFET N-CH 150V 45A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 813 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+227.57 грн
50+109.49 грн
100+98.88 грн
500+75.36 грн
Мінімальне замовлення: 2 шт
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FFAF20U60DNTU FFAF20U60DN.pdf
FFAF20U60DNTU
Виробник: onsemi
Description: DIODE ARRAY GP 600V 20A TO-3PF
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
FQPF10N60C description fqp10n60c-d.pdf
FQPF10N60C
Виробник: onsemi
Description: MOSFET N-CH 600V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
FQPF45N15V2 fqpf45n15v2-d.pdf
FQPF45N15V2
Виробник: onsemi
Description: MOSFET N-CH 150V 45A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
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