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PN4391_D75Z PN4391_D75Z onsemi PN4391-93%2C%20MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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PN4392_D26Z PN4392_D26Z onsemi PN4391-93, MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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PN4392_D27Z PN4392_D27Z onsemi PN4391-93, MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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PN4392_D75Z PN4392_D75Z onsemi PN4391-93, MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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PN4393_D26Z PN4393_D26Z onsemi PN4391-93, MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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PN4393_D27Z PN4393_D27Z onsemi PN4391-93, MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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PN4393_D74Z PN4393_D74Z onsemi PN4391-93, MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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PN4393_D75Z PN4393_D75Z onsemi PN4391-93, MMBF4391-93.pdf Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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PN4416_D27Z PN4416_D27Z onsemi Description: RF MOSFET JFET 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
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PN5179_D26Z PN5179_D26Z onsemi MMBT5179.pdf Description: RF TRANS NPN 12V 2GHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 15dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
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PN5432_D27Z PN5432_D27Z onsemi PN5432-34.pdf Description: JFET N-CH 25V 0.35W TO92
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PN5434_D26Z PN5434_D26Z onsemi PN5432-34.pdf Description: JFET N-CH 25V 0.35W TO92
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PN5434_D27Z PN5434_D27Z onsemi PN5432-34.pdf Description: JFET N-CH 25V 0.35W TO92
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PN918_D74Z PN918_D74Z onsemi PN918,%20MMBT918.pdf Description: RF TRANS NPN 15V 600MHZ TO92-3
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QEE323 onsemi Description: EMITTER RECTANGLE FOR QRD SWITCH
Packaging: Box
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QSB34CZR QSB34CZR onsemi ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
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QSD2030FA4A0 onsemi qsd2030f-d.pdf Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
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QSD2030FA4R0 onsemi qsd2030f-d.pdf Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
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QTLP610CPDTR QTLP610CPDTR onsemi qtlp610cpd-d.pdf Description: SENSOR PHOTO 860NM SIDE VIEW SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Wavelength: 860nm
Mounting Type: Surface Mount
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Viewing Angle: 160°
Current - Dark (Id) (Max): 100 nA
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 75 mW
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RB751S40 RB751S40 onsemi RB751S40_Overview.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RURD620CCS9A RURD620CCS9A onsemi rurd620ccs-f085-d.pdf Description: DIODE ARRAY GP 200V 6A DPAK
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SG6516DZ SG6516DZ onsemi SG6516.pdf Description: IC SUPERVISOR 4 CHANNEL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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SG6516SZ SG6516SZ onsemi SG6516.pdf Description: IC SUPERVISOR 4 CHANNEL 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
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SG6901ASZ SG6901ASZ onsemi Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 12V ~ 20V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Current - Startup: 10 µA
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TIS75_D75Z TIS75_D75Z onsemi Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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TIS75_J35Z TIS75_J35Z onsemi Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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TN2219A_D26Z TN2219A_D26Z onsemi TN2219A.pdf Description: TRANS NPN 40V 1A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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TN2219A_J05Z TN2219A_J05Z onsemi TN2219A.pdf Description: TRANS NPN 40V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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TN2907A_D26Z TN2907A_D26Z onsemi Description: TRANS PNP 60V 0.8A TO-226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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TN4033A_D26Z TN4033A_D26Z onsemi TN4033A.pdf Description: TRANS PNP 80V 1A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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TN6714A_D26Z TN6714A_D26Z onsemi tn6714a-d.pdf Description: TRANS NPN 30V 2A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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TN6725A_D26Z TN6725A_D26Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D27Z TN6725A_D27Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D74Z TN6725A_D74Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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TN6725A_D75Z TN6725A_D75Z onsemi TN6725A.pdf Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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TN6726A_D26Z TN6726A_D26Z onsemi NZT6726.pdf Description: TRANS PNP 30V 1.5A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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U1898_D27Z U1898_D27Z onsemi U1898_DS.pdf Description: JFET N-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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ZTX749A_J05Z ZTX749A_J05Z onsemi ZTX749A.pdf Description: TRANS PNP 35V 2A TO92-3
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ZTX749A_J61Z ZTX749A_J61Z onsemi ZTX749A.pdf Description: TRANS PNP 35V 2A TO92-3
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ZTX749_D27Z ZTX749_D27Z onsemi ZTX749.pdf Description: TRANS PNP 25V 2A TO226
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ZTX749_J61Z ZTX749_J61Z onsemi ZTX749.pdf Description: TRANS PNP 25V 2A TO92-3
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FDP3205 FDP3205 onsemi FDP3205.pdf Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
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FDP150N10 FDP150N10 onsemi fdp150n10-d.pdf Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
на замовлення 1024 шт:
термін постачання 21-31 дні (днів)
2+204.03 грн
50+100.70 грн
100+97.10 грн
500+78.80 грн
1000+74.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FSBB20CH60L FSBB20CH60L onsemi FSBB20CH60L.pdf Description: MODULE SPM 600V 20A SPM27-CB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
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FSBF15CH60BTL FSBF15CH60BTL onsemi FSBF15CH60BTL_DS.pdf Description: MODULE SPM 600V 15A SPM27-JB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товару немає в наявності
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FQPF6N90CT FQPF6N90CT onsemi fqpf6n90c-d.pdf Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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FQPF9N90CT FQPF9N90CT onsemi FQPF9N90C-D.PDF Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
на замовлення 11881 шт:
термін постачання 21-31 дні (днів)
1+346.14 грн
50+157.00 грн
100+151.51 грн
500+123.50 грн
1000+119.65 грн
В кошику  од. на суму  грн.
FDMA410NZ FDMA410NZ onsemi fdma410nz-d.pdf Description: MOSFET N-CH 20V 9.5A 6MICROFET
товару немає в наявності
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FDY1002PZ FDY1002PZ onsemi FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 20V 0.83A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+13.18 грн
6000+12.11 грн
9000+11.57 грн
15000+10.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDY102PZ FDY102PZ onsemi FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+7.95 грн
6000+6.95 грн
9000+6.59 грн
15000+5.80 грн
21000+5.58 грн
30000+5.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDY6342L FDY6342L onsemi Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
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FGH20N60SFDTU FGH20N60SFDTU onsemi fgh20n60sfdtu-f085-d.pdf Description: IGBT FIELD STOP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
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FGH20N60UFDTU FGH20N60UFDTU onsemi fgh20n60ufd-d.pdf Description: IGBT FIELD STOP 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/87ns
Switching Energy: 380µJ (on), 260µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
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В кошику  од. на суму  грн.
FDMA410NZ FDMA410NZ onsemi fdma410nz-d.pdf Description: MOSFET N-CH 20V 9.5A 6MICROFET
на замовлення 2051 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FDY1002PZ FDY1002PZ onsemi FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 20V 0.83A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 17622 шт:
термін постачання 21-31 дні (днів)
6+61.92 грн
10+37.23 грн
100+24.01 грн
500+17.22 грн
1000+15.54 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDY102PZ FDY102PZ onsemi FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
на замовлення 34254 шт:
термін постачання 21-31 дні (днів)
9+36.52 грн
15+21.41 грн
100+13.55 грн
500+9.52 грн
1000+8.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDY6342L FDY6342L onsemi Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MM5Z12V MM5Z12V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 12V 200MW SOD523F
товару немає в наявності
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MM5Z13V MM5Z13V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 13V 200MW SOD523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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MM5Z15V MM5Z15V onsemi MM5Z2V4-5Z75V.pdf Description: DIODE ZENER 15V 200MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523F
Part Status: Obsolete
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
товару немає в наявності
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PN4391_D75Z PN4391-93%2C%20MMBF4391-93.pdf
PN4391_D75Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
товару немає в наявності
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PN4392_D26Z PN4391-93, MMBF4391-93.pdf
PN4392_D26Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товару немає в наявності
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PN4392_D27Z PN4391-93, MMBF4391-93.pdf
PN4392_D27Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PN4392_D75Z PN4391-93, MMBF4391-93.pdf
PN4392_D75Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PN4393_D26Z PN4391-93, MMBF4391-93.pdf
PN4393_D26Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PN4393_D27Z PN4391-93, MMBF4391-93.pdf
PN4393_D27Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PN4393_D74Z PN4391-93, MMBF4391-93.pdf
PN4393_D74Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PN4393_D75Z PN4391-93, MMBF4391-93.pdf
PN4393_D75Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
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PN4416_D27Z
PN4416_D27Z
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
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PN5179_D26Z MMBT5179.pdf
PN5179_D26Z
Виробник: onsemi
Description: RF TRANS NPN 12V 2GHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 15dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
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PN5432_D27Z PN5432-34.pdf
PN5432_D27Z
Виробник: onsemi
Description: JFET N-CH 25V 0.35W TO92
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PN5434_D26Z PN5432-34.pdf
PN5434_D26Z
Виробник: onsemi
Description: JFET N-CH 25V 0.35W TO92
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PN5434_D27Z PN5432-34.pdf
PN5434_D27Z
Виробник: onsemi
Description: JFET N-CH 25V 0.35W TO92
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PN918_D74Z PN918,%20MMBT918.pdf
PN918_D74Z
Виробник: onsemi
Description: RF TRANS NPN 15V 600MHZ TO92-3
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QEE323
Виробник: onsemi
Description: EMITTER RECTANGLE FOR QRD SWITCH
Packaging: Box
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QSB34CZR ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw
QSB34CZR
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
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QSD2030FA4A0 qsd2030f-d.pdf
Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
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QSD2030FA4R0 qsd2030f-d.pdf
Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
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QTLP610CPDTR qtlp610cpd-d.pdf
QTLP610CPDTR
Виробник: onsemi
Description: SENSOR PHOTO 860NM SIDE VIEW SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Wavelength: 860nm
Mounting Type: Surface Mount
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Viewing Angle: 160°
Current - Dark (Id) (Max): 100 nA
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 75 mW
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RB751S40 RB751S40_Overview.pdf
RB751S40
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RURD620CCS9A rurd620ccs-f085-d.pdf
RURD620CCS9A
Виробник: onsemi
Description: DIODE ARRAY GP 200V 6A DPAK
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SG6516DZ SG6516.pdf
SG6516DZ
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
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SG6516SZ SG6516.pdf
SG6516SZ
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
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SG6901ASZ
SG6901ASZ
Виробник: onsemi
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 12V ~ 20V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Current - Startup: 10 µA
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TIS75_D75Z
TIS75_D75Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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TIS75_J35Z
TIS75_J35Z
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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TN2219A_D26Z TN2219A.pdf
TN2219A_D26Z
Виробник: onsemi
Description: TRANS NPN 40V 1A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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TN2219A_J05Z TN2219A.pdf
TN2219A_J05Z
Виробник: onsemi
Description: TRANS NPN 40V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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TN2907A_D26Z
TN2907A_D26Z
Виробник: onsemi
Description: TRANS PNP 60V 0.8A TO-226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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TN4033A_D26Z TN4033A.pdf
TN4033A_D26Z
Виробник: onsemi
Description: TRANS PNP 80V 1A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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TN6714A_D26Z tn6714a-d.pdf
TN6714A_D26Z
Виробник: onsemi
Description: TRANS NPN 30V 2A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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TN6725A_D26Z TN6725A.pdf
TN6725A_D26Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D27Z TN6725A.pdf
TN6725A_D27Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
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TN6725A_D74Z TN6725A.pdf
TN6725A_D74Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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TN6725A_D75Z TN6725A.pdf
TN6725A_D75Z
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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TN6726A_D26Z NZT6726.pdf
TN6726A_D26Z
Виробник: onsemi
Description: TRANS PNP 30V 1.5A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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U1898_D27Z U1898_DS.pdf
U1898_D27Z
Виробник: onsemi
Description: JFET N-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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ZTX749A_J05Z ZTX749A.pdf
ZTX749A_J05Z
Виробник: onsemi
Description: TRANS PNP 35V 2A TO92-3
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ZTX749A_J61Z ZTX749A.pdf
ZTX749A_J61Z
Виробник: onsemi
Description: TRANS PNP 35V 2A TO92-3
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ZTX749_D27Z ZTX749.pdf
ZTX749_D27Z
Виробник: onsemi
Description: TRANS PNP 25V 2A TO226
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ZTX749_J61Z ZTX749.pdf
ZTX749_J61Z
Виробник: onsemi
Description: TRANS PNP 25V 2A TO92-3
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FDP3205 FDP3205.pdf
FDP3205
Виробник: onsemi
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
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FDP150N10 fdp150n10-d.pdf
FDP150N10
Виробник: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
на замовлення 1024 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.03 грн
50+100.70 грн
100+97.10 грн
500+78.80 грн
1000+74.93 грн
Мінімальне замовлення: 2
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FSBB20CH60L FSBB20CH60L.pdf
FSBB20CH60L
Виробник: onsemi
Description: MODULE SPM 600V 20A SPM27-CB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
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FSBF15CH60BTL FSBF15CH60BTL_DS.pdf
FSBF15CH60BTL
Виробник: onsemi
Description: MODULE SPM 600V 15A SPM27-JB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
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FQPF6N90CT fqpf6n90c-d.pdf
FQPF6N90CT
Виробник: onsemi
Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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FQPF9N90CT FQPF9N90C-D.PDF
FQPF9N90CT
Виробник: onsemi
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
на замовлення 11881 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+346.14 грн
50+157.00 грн
100+151.51 грн
500+123.50 грн
1000+119.65 грн
В кошику  од. на суму  грн.
FDMA410NZ fdma410nz-d.pdf
FDMA410NZ
Виробник: onsemi
Description: MOSFET N-CH 20V 9.5A 6MICROFET
товару немає в наявності
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FDY1002PZ FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw
FDY1002PZ
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.18 грн
6000+12.11 грн
9000+11.57 грн
15000+10.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDY102PZ FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw
FDY102PZ
Виробник: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.95 грн
6000+6.95 грн
9000+6.59 грн
15000+5.80 грн
21000+5.58 грн
30000+5.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDY6342L
FDY6342L
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
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FGH20N60SFDTU fgh20n60sfdtu-f085-d.pdf
FGH20N60SFDTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
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FGH20N60UFDTU fgh20n60ufd-d.pdf
FGH20N60UFDTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/87ns
Switching Energy: 380µJ (on), 260µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
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FDMA410NZ fdma410nz-d.pdf
FDMA410NZ
Виробник: onsemi
Description: MOSFET N-CH 20V 9.5A 6MICROFET
на замовлення 2051 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FDY1002PZ FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw
FDY1002PZ
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 17622 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.92 грн
10+37.23 грн
100+24.01 грн
500+17.22 грн
1000+15.54 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDY102PZ FAIR-S-A0000083184-1.pdf?t.download=true&u=5oefqw
FDY102PZ
Виробник: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
на замовлення 34254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.52 грн
15+21.41 грн
100+13.55 грн
500+9.52 грн
1000+8.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDY6342L
FDY6342L
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
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MM5Z12V MM5Z2V4-5Z75V.pdf
MM5Z12V
Виробник: onsemi
Description: DIODE ZENER 12V 200MW SOD523F
товару немає в наявності
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MM5Z13V MM5Z2V4-5Z75V.pdf
MM5Z13V
Виробник: onsemi
Description: DIODE ZENER 13V 200MW SOD523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товару немає в наявності
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MM5Z15V MM5Z2V4-5Z75V.pdf
MM5Z15V
Виробник: onsemi
Description: DIODE ZENER 15V 200MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523F
Part Status: Obsolete
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
товару немає в наявності
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