| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NLSV2T244MUTAG | onsemi |
Description: IC TRANSLTR UNIDIRECTIONAL 8UDFNPackaging: Cut Tape (CT) Features: Over Voltage Protection, Power-Off Protection Package / Case: 8-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-UDFN (1.8x1.2) Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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NLSX3018MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 20UDFNPackaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 20-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 110Mbps Supplier Device Package: 20-UDFN (4x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLSX4373MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFNPackaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-UFDFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 20Mbps Supplier Device Package: 8-UDFN (1.8x1.2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NS5B1G385DTT1G | onsemi |
Description: IC SWITCH SPST-NOX1 15OHM 5TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 330MHz Supplier Device Package: 5-TSOP Voltage - Supply, Single (V+): 2V ~ 5.5V Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 6ns, 2ns Channel Capacitance (CS(off), CD(off)): 4.1pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
на замовлення 9936 шт: термін постачання 21-31 дні (днів) |
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NSI45025T1G | onsemi |
Description: IC CURRENT REGULATOR 15% SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 25mA Accuracy: ±15% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Part Status: Active |
на замовлення 7625 шт: термін постачання 21-31 дні (днів) |
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NSI45030T1G | onsemi |
Description: IC CURRENT REGULATOR 15% SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 30mA Accuracy: ±15% Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Part Status: Active |
на замовлення 26995 шт: термін постачання 21-31 дні (днів) |
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NSR0170P2T5G | onsemi |
Description: DIODE SCHOTTKY 70V 70MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA Current - Reverse Leakage @ Vr: 3 µA @ 70 V |
на замовлення 128410 шт: термін постачання 21-31 дні (днів) |
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NSR01F30NXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 100MA 2DSNPackaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 5V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 2-DSN (0.60x0.30) Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 121531 шт: термін постачання 21-31 дні (днів) |
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NSR01L30NXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 100MA 2DSNPackaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 5V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 2-DSN (0.60x0.30) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 30 V |
на замовлення 50412 шт: термін постачання 21-31 дні (днів) |
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NSR0340P2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 200MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 200 mA Current - Reverse Leakage @ Vr: 20 µA @ 40 V |
на замовлення 787019 шт: термін постачання 21-31 дні (днів) |
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NSS12200LT1G | onsemi |
Description: TRANS PNP 12V 2A SOT23-3 |
на замовлення 155 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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NSS1C201LT1G | onsemi |
Description: TRANS NPN 100V 2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 490 mW |
на замовлення 22749 шт: термін постачання 21-31 дні (днів) |
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NSS20101JT1G | onsemi |
Description: TRANS NPN 20V 1A SC-89-3Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 350MHz Supplier Device Package: SC-89-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 300 mW |
на замовлення 1006 шт: термін постачання 21-31 дні (днів) |
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NSS20500UW3T2G | onsemi |
Description: TRANS PNP 20V 5A 3WDFNPackaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: 3-WDFN (2x2) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 875 mW |
на замовлення 1345 шт: термін постачання 21-31 дні (днів) |
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NSS40200LT1G | onsemi |
Description: TRANS PNP 40V 2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 460 mW |
на замовлення 8435 шт: термін постачання 21-31 дні (днів) |
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NSS40300MZ4T1G | onsemi |
Description: TRANS PNP 40V 3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V Frequency - Transition: 160MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 2 W |
на замовлення 7221 шт: термін постачання 21-31 дні (днів) |
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NST3906F3T5G | onsemi |
Description: TRANS PNP 40V 0.2A SOT-1123Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-1123 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 290 mW |
на замовлення 16261 шт: термін постачання 21-31 дні (днів) |
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NST45010MW6T1G | onsemi |
Description: TRANS 2PNP 45V 100MA SC-88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
на замовлення 4769 шт: термін постачання 21-31 дні (днів) |
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NTGS3136PT1G | onsemi |
Description: MOSFET P-CH 20V 3.7A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V |
на замовлення 55967 шт: термін постачання 21-31 дні (днів) |
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NTGS3433T1G | onsemi |
Description: MOSFET P-CH 12V 2.35A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTHS4166NT1G | onsemi |
Description: MOSFET N-CH 30V 4.9A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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NTLJS2103PTBG | onsemi |
Description: MOSFET P-CH 12V 3.5A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V |
на замовлення 3360 шт: термін постачання 21-31 дні (днів) |
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NTLUS3A40PZTAG | onsemi |
Description: MOSFET P-CH 20V 4A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V |
на замовлення 2394 шт: термін постачання 21-31 дні (днів) |
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NTLUS3A90PZTAG | onsemi |
Description: MOSFET P-CH 20V 2.6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTTFS5116PLTAG | onsemi |
Description: MOSFET P-CH 60V 5.7A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V Power Dissipation (Max): 3.2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V |
на замовлення 3949 шт: термін постачання 21-31 дні (днів) |
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NTTFS5826NLTAG | onsemi |
Description: MOSFET N-CH 60V 8A 8WDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTUD3169CZT5G | onsemi |
Description: MOSFET N/P-CH 20V 0.22A SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 125mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 20680 шт: термін постачання 21-31 дні (днів) |
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NUP2114UCMR6T1G | onsemi |
Description: TVS DIODE 5VWM 10VC 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes Part Status: Active |
на замовлення 32764 шт: термін постачання 21-31 дні (днів) |
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NUP2114UPXV5T1G | onsemi |
Description: TVS DIODE 5VWM 10VC SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-553 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes |
на замовлення 1937 шт: термін постачання 21-31 дні (днів) |
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NUP4114HMR6T1G | onsemi |
Description: TVS DIODE 5.5VWM 10VC 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: Yes Part Status: Active |
на замовлення 25981 шт: термін постачання 21-31 дні (днів) |
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NVTR4503NT1G | onsemi |
Description: MOSFET N-CH 30V 1.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15128 шт: термін постачання 21-31 дні (днів) |
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NZ9F2V4ST5G | onsemi |
Description: DIODE ZENER 2.53V 250MW SOD923Packaging: Cut Tape (CT) Tolerance: ±4% Package / Case: SOD-923 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.53 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-923 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
на замовлення 25445 шт: термін постачання 21-31 дні (днів) |
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NZQA6V8AXV5T1G | onsemi |
Description: TVS DIODE 4.3VWM 13VC SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 4.3V Supplier Device Package: SOT-553 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.47V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Part Status: Active |
на замовлення 27942 шт: термін постачання 21-31 дні (днів) |
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PACDN004SR | onsemi |
Description: TVS DIODE 5.5VWM SOT143-4Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: Automotive Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-143-4 Unidirectional Channels: 2 Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PACDN042Y3R | onsemi |
Description: TVS DIODE 5.5VWM 8VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 88210 шт: термін постачання 21-31 дні (днів) |
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SMUN2211T1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 11475 шт: термін постачання 21-31 дні (днів) |
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SMUN5111DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18020 шт: термін постачання 21-31 дні (днів) |
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SMUN5311DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 123 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ27VALT1G | onsemi |
Description: DIODE ZENER ARRAY 27V SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active Tolerance: ±5% Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 27 V Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 22 V Qualification: AEC-Q101 |
на замовлення 46992 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ27VCLT1G | onsemi |
Description: TVS DIODE 22VWM 38VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 38V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5V6ALT1G | onsemi |
Description: DIODE ZENER ARRAY 5.6V SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 3A Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.32V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 24W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 Tolerance: ±5% Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 5.6 V Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 5987 шт: термін постачання 21-31 дні (днів) |
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SZNUP2105LT1G | onsemi |
Description: TVS DIODE 24VWM 44VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 58176 шт: термін постачання 21-31 дні (днів) |
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FDB060AN08A0 | onsemi |
Description: MOSFET N-CH 75V 16A/80A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V |
на замовлення 2841 шт: термін постачання 21-31 дні (днів) |
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HUF76439S3ST | onsemi |
Description: MOSFET N-CH 60V 75A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V |
на замовлення 3171 шт: термін постачання 21-31 дні (днів) |
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FIN1019MTCX | onsemi |
Description: IC TRANSCEIVER FULL 1/1 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 14-TSSOP Duplex: Full Part Status: Active |
на замовлення 10016 шт: термін постачання 21-31 дні (днів) |
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FSUSB11MTCX | onsemi |
Description: IC USB SWITCH DUAL 1X1 14TSSOPFeatures: Break-Before-Make, USB 1.1 Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 1.5Ohm -3db Bandwidth: 350MHz Supplier Device Package: 14-TSSOP Voltage - Supply, Single (V+): 1.65V ~ 5.5V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDD86250 | onsemi |
Description: MOSFET N-CH 150V 8A/50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V |
на замовлення 3381 шт: термін постачання 21-31 дні (днів) |
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FDD5N50NZFTM | onsemi |
Description: MOSFET N-CH 500V 3.7A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC8200S | onsemi |
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 10742 шт: термін постачання 21-31 дні (днів) |
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LM431SCCMLX | onsemi |
Description: IC VREF SHUNT ADJ 0.5% SOT89-3Packaging: Cut Tape (CT) Tolerance: ±0.5% Package / Case: TO-243AA Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 3594 шт: термін постачання 21-31 дні (днів) |
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NC7SV32L6X | onsemi |
Description: IC GATE OR 1CH 2-INP 6MICROPAK |
на замовлення 128005 шт: термін постачання 21-31 дні (днів) |
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GF1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 90837 шт: термін постачання 21-31 дні (днів) |
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FDB035N10A | onsemi |
Description: MOSFET N-CH 100V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V |
на замовлення 3303 шт: термін постачання 21-31 дні (днів) |
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74LVTH573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 32mA, 64mA Delay Time - Propagation: 4.4ns Supplier Device Package: 20-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX541BQX | onsemi |
Description: IC BUF NON-INVERT 3.6V 20DQFN Packaging: Cut Tape (CT) Package / Case: 20-WFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-DQFN (2.5x4.5) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC86102LZ | onsemi |
Description: MOSFET N-CH 100V 7A/18A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V |
на замовлення 41361 шт: термін постачання 21-31 дні (днів) |
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EGP20G | onsemi |
Description: DIODE STANDARD 400V 2A DO15Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 10787 шт: термін постачання 21-31 дні (днів) |
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SS18 | onsemi |
Description: DIODE SCHOTTKY 80V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 80 V |
на замовлення 32544 шт: термін постачання 21-31 дні (днів) |
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74LVT16374MTDX | onsemi |
Description: IC FF D-TYPE DUAL 8BIT 48TSSOP |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC8622 | onsemi |
Description: MOSFET N-CH 100V 4A/16A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V |
на замовлення 20076 шт: термін постачання 21-31 дні (днів) |
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| NLSV2T244MUTAG |
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Виробник: onsemi
Description: IC TRANSLTR UNIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Over Voltage Protection, Power-Off Protection
Package / Case: 8-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Over Voltage Protection, Power-Off Protection
Package / Case: 8-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.88 грн |
| 10+ | 61.39 грн |
| 25+ | 57.61 грн |
| NLSX3018MUTAG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 20UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 20-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-UDFN (4x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 20UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 20-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-UDFN (4x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Part Status: Active
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| NLSX4373MUTAG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| NS5B1G385DTT1G |
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Виробник: onsemi
Description: IC SWITCH SPST-NOX1 15OHM 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 5-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 2ns
Channel Capacitance (CS(off), CD(off)): 4.1pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPST-NOX1 15OHM 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 5-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 2ns
Channel Capacitance (CS(off), CD(off)): 4.1pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
на замовлення 9936 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.37 грн |
| 14+ | 24.47 грн |
| 25+ | 22.05 грн |
| 100+ | 11.29 грн |
| 250+ | 10.91 грн |
| 500+ | 9.78 грн |
| 1000+ | 7.40 грн |
| NSI45025T1G |
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Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
на замовлення 7625 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.97 грн |
| 28+ | 12.03 грн |
| 31+ | 10.65 грн |
| 100+ | 8.57 грн |
| 250+ | 7.88 грн |
| 500+ | 7.47 грн |
| 1000+ | 7.01 грн |
| NSI45030T1G |
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Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
на замовлення 26995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.97 грн |
| 28+ | 11.95 грн |
| 32+ | 10.61 грн |
| 100+ | 8.52 грн |
| 250+ | 7.84 грн |
| 500+ | 7.43 грн |
| 1000+ | 6.98 грн |
| NSR0170P2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
на замовлення 128410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.97 грн |
| 31+ | 10.71 грн |
| 100+ | 8.59 грн |
| 500+ | 5.99 грн |
| 1000+ | 5.00 грн |
| 2000+ | 4.72 грн |
| NSR01F30NXT5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 121531 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.10 грн |
| 22+ | 15.00 грн |
| 100+ | 12.01 грн |
| 500+ | 8.42 грн |
| 1000+ | 7.27 грн |
| 2000+ | 6.72 грн |
| NSR01L30NXT5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
на замовлення 50412 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.82 грн |
| 31+ | 10.96 грн |
| 100+ | 10.39 грн |
| 500+ | 7.65 грн |
| 1000+ | 7.06 грн |
| NSR0340P2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
на замовлення 787019 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.83 грн |
| 50+ | 6.67 грн |
| 100+ | 4.70 грн |
| 500+ | 3.21 грн |
| 1000+ | 2.79 грн |
| 2000+ | 2.49 грн |
| NSS12200LT1G |
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Виробник: onsemi
Description: TRANS PNP 12V 2A SOT23-3
Description: TRANS PNP 12V 2A SOT23-3
на замовлення 155 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NSS1C201LT1G |
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Виробник: onsemi
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
на замовлення 22749 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.48 грн |
| 11+ | 30.07 грн |
| 100+ | 19.29 грн |
| 500+ | 13.71 грн |
| 1000+ | 12.29 грн |
| NSS20101JT1G |
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Виробник: onsemi
Description: TRANS NPN 20V 1A SC-89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: SC-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
Description: TRANS NPN 20V 1A SC-89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: SC-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
на замовлення 1006 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.81 грн |
| 23+ | 14.34 грн |
| 100+ | 8.95 грн |
| 500+ | 6.20 грн |
| 1000+ | 5.48 грн |
| NSS20500UW3T2G |
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Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
на замовлення 1345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.46 грн |
| 10+ | 37.49 грн |
| 100+ | 24.29 грн |
| 500+ | 17.45 грн |
| 1000+ | 15.73 грн |
| NSS40200LT1G |
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Виробник: onsemi
Description: TRANS PNP 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
Description: TRANS PNP 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
на замовлення 8435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.79 грн |
| 16+ | 21.75 грн |
| 100+ | 13.82 грн |
| 500+ | 9.73 грн |
| 1000+ | 8.69 грн |
| NSS40300MZ4T1G |
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Виробник: onsemi
Description: TRANS PNP 40V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Description: TRANS PNP 40V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
на замовлення 7221 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.73 грн |
| 10+ | 43.59 грн |
| 100+ | 28.30 грн |
| 500+ | 20.37 грн |
| NST3906F3T5G |
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Виробник: onsemi
Description: TRANS PNP 40V 0.2A SOT-1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 290 mW
Description: TRANS PNP 40V 0.2A SOT-1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 290 mW
на замовлення 16261 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.81 грн |
| 23+ | 14.34 грн |
| 100+ | 8.96 грн |
| 500+ | 6.20 грн |
| 1000+ | 5.49 грн |
| 2000+ | 4.89 грн |
| NST45010MW6T1G |
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Виробник: onsemi
Description: TRANS 2PNP 45V 100MA SC-88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS 2PNP 45V 100MA SC-88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 4769 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.49 грн |
| 13+ | 26.37 грн |
| 100+ | 16.87 грн |
| 500+ | 11.96 грн |
| 1000+ | 10.71 грн |
| NTGS3136PT1G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
на замовлення 55967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 83.00 грн |
| 10+ | 70.12 грн |
| 100+ | 53.76 грн |
| 500+ | 39.88 грн |
| 1000+ | 31.91 грн |
| NTGS3433T1G |
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Виробник: onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
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од. на суму грн.
| NTHS4166NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.42 грн |
| 10+ | 56.28 грн |
| 100+ | 39.04 грн |
| NTLJS2103PTBG |
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Виробник: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
на замовлення 3360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.59 грн |
| 10+ | 44.25 грн |
| 100+ | 28.87 грн |
| 500+ | 20.89 грн |
| 1000+ | 18.89 грн |
| NTLUS3A40PZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Description: MOSFET P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.27 грн |
| 10+ | 56.77 грн |
| 100+ | 37.46 грн |
| 500+ | 27.35 грн |
| 1000+ | 24.84 грн |
| NTLUS3A90PZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
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од. на суму грн.
| NTTFS5116PLTAG |
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Виробник: onsemi
Description: MOSFET P-CH 60V 5.7A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
на замовлення 3949 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.98 грн |
| 10+ | 61.47 грн |
| 100+ | 42.82 грн |
| 500+ | 32.32 грн |
| NTTFS5826NLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 8A 8WDFN
Description: MOSFET N-CH 60V 8A 8WDFN
товару немає в наявності
В кошику
од. на суму грн.
| NTUD3169CZT5G |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.22A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
Description: MOSFET N/P-CH 20V 0.22A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 20680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.81 грн |
| 23+ | 14.42 грн |
| 100+ | 9.02 грн |
| 500+ | 6.27 грн |
| 1000+ | 5.55 грн |
| 2000+ | 4.95 грн |
| NUP2114UCMR6T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Part Status: Active
на замовлення 32764 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.49 грн |
| 12+ | 29.09 грн |
| 100+ | 19.92 грн |
| 500+ | 14.82 грн |
| 1000+ | 13.25 грн |
| NUP2114UPXV5T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 10VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-553
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-553
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
на замовлення 1937 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.40 грн |
| 35+ | 9.64 грн |
| 100+ | 8.11 грн |
| 500+ | 7.28 грн |
| 1000+ | 7.22 грн |
| NUP4114HMR6T1G |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
на замовлення 25981 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.82 грн |
| 23+ | 14.91 грн |
| 100+ | 14.74 грн |
| NVTR4503NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.66 грн |
| 18+ | 18.87 грн |
| 100+ | 11.90 грн |
| 500+ | 8.33 грн |
| 1000+ | 7.39 грн |
| NZ9F2V4ST5G |
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Виробник: onsemi
Description: DIODE ZENER 2.53V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.53 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: DIODE ZENER 2.53V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.53 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
на замовлення 25445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.37 грн |
| 15+ | 22.49 грн |
| 100+ | 11.36 грн |
| 500+ | 8.70 грн |
| 1000+ | 6.45 грн |
| 2000+ | 5.43 грн |
| NZQA6V8AXV5T1G |
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Виробник: onsemi
Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
на замовлення 27942 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.10 грн |
| 22+ | 15.00 грн |
| 100+ | 7.58 грн |
| 500+ | 6.54 грн |
| 1000+ | 5.97 грн |
| PACDN004SR |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143-4
Unidirectional Channels: 2
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5.5VWM SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143-4
Unidirectional Channels: 2
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| PACDN042Y3R |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 8VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 8VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 88210 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.96 грн |
| 21+ | 15.74 грн |
| 100+ | 7.75 грн |
| 500+ | 7.08 грн |
| 1000+ | 6.90 грн |
| SMUN2211T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 11475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.40 грн |
| 36+ | 9.31 грн |
| 100+ | 5.77 грн |
| 500+ | 3.94 грн |
| 1000+ | 3.47 грн |
| SMUN5111DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18020 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.39 грн |
| 27+ | 12.52 грн |
| 100+ | 7.82 грн |
| 500+ | 5.40 грн |
| 1000+ | 4.77 грн |
| SMUN5311DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 123 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.68 грн |
| 29+ | 11.54 грн |
| 100+ | 7.20 грн |
| SZMMBZ27VALT1G |
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Виробник: onsemi
Description: DIODE ZENER ARRAY 27V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 27 V
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22 V
Qualification: AEC-Q101
Description: DIODE ZENER ARRAY 27V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 27 V
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22 V
Qualification: AEC-Q101
на замовлення 46992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.41 грн |
| 55+ | 6.01 грн |
| 155+ | 2.13 грн |
| 500+ | 1.94 грн |
| SZMMBZ27VCLT1G |
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Виробник: onsemi
Description: TVS DIODE 22VWM 38VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 38VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.70 грн |
| 86+ | 3.87 грн |
| 100+ | 3.63 грн |
| 500+ | 3.27 грн |
| 1000+ | 3.07 грн |
| SZMMBZ5V6ALT1G |
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Виробник: onsemi
Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 5987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.82 грн |
| 30+ | 11.04 грн |
| 100+ | 6.82 грн |
| 500+ | 4.70 грн |
| 1000+ | 4.15 грн |
| SZNUP2105LT1G |
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Виробник: onsemi
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 58176 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.81 грн |
| 23+ | 14.67 грн |
| 100+ | 9.20 грн |
| 500+ | 6.40 грн |
| 1000+ | 5.67 грн |
| FDB060AN08A0 |
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Виробник: onsemi
Description: MOSFET N-CH 75V 16A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
Description: MOSFET N-CH 75V 16A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
на замовлення 2841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 373.92 грн |
| 10+ | 238.54 грн |
| 100+ | 169.38 грн |
| HUF76439S3ST |
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Виробник: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V
на замовлення 3171 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 263.54 грн |
| 10+ | 164.96 грн |
| 100+ | 114.68 грн |
| FIN1019MTCX |
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Виробник: onsemi
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
на замовлення 10016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.47 грн |
| 10+ | 99.12 грн |
| 25+ | 90.24 грн |
| 100+ | 75.56 грн |
| 250+ | 71.20 грн |
| 500+ | 68.57 грн |
| 1000+ | 65.32 грн |
| FSUSB11MTCX |
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Виробник: onsemi
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Features: Break-Before-Make, USB 1.1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Features: Break-Before-Make, USB 1.1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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од. на суму грн.
| FDD86250 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 8A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
Description: MOSFET N-CH 150V 8A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
на замовлення 3381 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.36 грн |
| 10+ | 86.93 грн |
| 100+ | 62.38 грн |
| 500+ | 43.62 грн |
| 1000+ | 40.59 грн |
| FDD5N50NZFTM |
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Виробник: onsemi
Description: MOSFET N-CH 500V 3.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Description: MOSFET N-CH 500V 3.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FDMC8200S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 10742 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.61 грн |
| 10+ | 88.58 грн |
| 100+ | 59.47 грн |
| 500+ | 44.07 грн |
| 1000+ | 40.29 грн |
| LM431SCCMLX |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 3594 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.08 грн |
| 14+ | 24.06 грн |
| 25+ | 21.49 грн |
| 100+ | 17.51 грн |
| 250+ | 16.25 грн |
| 500+ | 15.48 грн |
| 1000+ | 14.61 грн |
| NC7SV32L6X |
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Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Description: IC GATE OR 1CH 2-INP 6MICROPAK
на замовлення 128005 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.79 грн |
| 12+ | 29.75 грн |
| 25+ | 27.82 грн |
| 100+ | 20.87 грн |
| 250+ | 19.38 грн |
| 500+ | 16.40 грн |
| 1000+ | 12.46 грн |
| 2500+ | 12.10 грн |
| GF1G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 90837 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.07 грн |
| 14+ | 24.39 грн |
| 100+ | 15.56 грн |
| 500+ | 11.01 грн |
| 1000+ | 9.85 грн |
| 2000+ | 8.87 грн |
| FDB035N10A |
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Виробник: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
на замовлення 3303 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.48 грн |
| 10+ | 244.72 грн |
| 100+ | 174.99 грн |
| 74LVTH573MTCX |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 4.4ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 4.4ns
Supplier Device Package: 20-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| 74LCX541BQX |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| FDMC86102LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
на замовлення 41361 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.99 грн |
| 10+ | 112.14 грн |
| 100+ | 81.73 грн |
| 500+ | 64.41 грн |
| 1000+ | 59.32 грн |
| EGP20G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 10787 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.74 грн |
| 10+ | 41.69 грн |
| 100+ | 32.84 грн |
| 500+ | 23.89 грн |
| 1000+ | 21.66 грн |
| 2000+ | 19.78 грн |
| SS18 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 80V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
Description: DIODE SCHOTTKY 80V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
на замовлення 32544 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.09 грн |
| 16+ | 20.76 грн |
| 100+ | 17.28 грн |
| 500+ | 13.37 грн |
| 1000+ | 11.98 грн |
| 2000+ | 11.83 грн |
| 74LVT16374MTDX |
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Виробник: onsemi
Description: IC FF D-TYPE DUAL 8BIT 48TSSOP
Description: IC FF D-TYPE DUAL 8BIT 48TSSOP
на замовлення 420 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FDMC8622 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 4A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
Description: MOSFET N-CH 100V 4A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
на замовлення 20076 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.91 грн |
| 10+ | 96.90 грн |
| 100+ | 72.92 грн |
| 500+ | 52.37 грн |
| 1000+ | 48.09 грн |






































