| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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FDP032N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 4868 шт: термін постачання 21-31 дні (днів) |
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FDP045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
на замовлення 184236 шт: термін постачання 21-31 дні (днів) |
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FDP085N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 96A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FGH15T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 30A TO-247Switching Energy: 1.15mJ (on), 460µJ (off) Td (on/off) @ 25°C: 32ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Reverse Recovery Time (trr): 72 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 333 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Gate Charge: 128 nC Test Condition: 600V, 15A, 34Ohm, 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FGH25T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 50A TO-247Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 428 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active Gate Charge: 225 nC Test Condition: 600V, 25A, 23Ohm, 15V Switching Energy: 1.74mJ (on), 560µJ (off) Td (on/off) @ 25°C: 40ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Reverse Recovery Time (trr): 60 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FGH30T65UPDT-F155 | onsemi |
Description: IGBT 650V 60A 250W TO247-3Power - Max: 250 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 155 nC Test Condition: 400V, 30A, 8Ohm, 15V Switching Energy: 760µJ (on), 400µJ (off) Td (on/off) @ 25°C: 22ns/139ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Reverse Recovery Time (trr): 43 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FGH40T120SMD | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
на замовлення 1070 шт: термін постачання 21-31 дні (днів) |
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FGH40T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
на замовлення 3121 шт: термін постачання 21-31 дні (днів) |
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FOD8160V | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOPCurrent - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Tube |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
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RHRP860-F085 | onsemi |
Description: DIODE STANDARD 600V 8A TO2202Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Grade: Automotive Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN302HLMY-F117 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 67% Frequency - Switching: 85kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN3122TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 10.6A, 11.4A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 23ns, 19ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAN3224CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN3224TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FAN3226TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPart Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FAN3227CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Type: N-Channel MOSFET Number of Drivers: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN3228CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN6757MRMX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPart Status: Obsolete Voltage - Start Up: 17 V Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-SOIC Voltage - Supply (Vcc/Vdd): 11V ~ 30V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 82.5% Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN6921AMLMY | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 16SOICPart Status: Obsolete Voltage - Start Up: 18 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 16-SOIC Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCD620N60ZF | onsemi |
Description: MOSFET N-CH 600V 7.3A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V |
на замовлення 11800 шт: термін постачання 21-31 дні (днів) |
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FCD900N60Z | onsemi |
Description: MOSFET N-CH 600V 4.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FDB8132_F085 | onsemi |
Description: MOSFET N-CH 30V 80A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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FDD120AN15A0-F085 | onsemi |
Description: MOSFET N-CH 150V 14A DPAKPackage / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDD1600N10ALZ | onsemi |
Description: MOSFET N-CH 100V 6.8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V Power Dissipation (Max): 14.9W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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FDMC0310AS-F127 | onsemi |
Description: MOSFET N-CH 30V 21A 8MLPInput Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 1mA Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FDMF6824A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFNCurrent - Output / Channel: 60A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS037N08B | onsemi |
Description: MOSFET N-CH 75V 100A 8PQFNOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 830mW (Ta), 104.2W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMS3660AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS3660S-F121 | onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: Power56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS86202 | onsemi |
Description: MOSFET N-CH 120V 13.5A POWER56Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMS86550 | onsemi |
Description: MOSFET N-CH 60V 32A/155A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDPC4044 | onsemi |
Description: MOSFET 2N-CH POWERCLIP-33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDT1600N10ALZ | onsemi |
Description: MOSFET N-CH 100V 5.6A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V Power Dissipation (Max): 10.42W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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FGD3040G2-F085 | onsemi |
Description: IGBT 400V 41A TO-252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FGD3440G2-F085 | onsemi |
Description: IGBT 400V 26.9A TO-252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: -/5.3µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 24 nC Current - Collector (Ic) (Max): 26.9 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 166 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FODM8801AR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FODM8801BR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 210000 шт: термін постачання 21-31 дні (днів) |
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FQD9N25TM-F085 | onsemi |
Description: MOSFET N-CH 250V 7.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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ISL9V5045S3ST-F085 | onsemi |
Description: IGBT 480V 51A TO-263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: -/10.8µs Test Condition: 300V, 1kOhm, 5V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 480 V Power - Max: 300 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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RURD4120S9A-F085 | onsemi |
Description: DIODE GEN PURP 1.2KV 4A TO252AAMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-252AA Current - Average Rectified (Io): 4A Technology: Avalanche Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RURD660S9A-F085 | onsemi |
Description: DIODE GEN PURP 600V 6A TO252AA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FAN48630UC50X | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSPFunction: Step-Up Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 16-UFBGA, WLCSP Packaging: Tape & Reel (TR) Voltage - Output (Min/Fixed): 5V, 5.29V Voltage - Input (Min): 2.35V Synchronous Rectifier: Yes Supplier Device Package: 16-WLCSP (1.78x1.78) Topology: Boost Voltage - Input (Max): 5.5V Frequency - Switching: 2.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 1.5A (Switch) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN53555UC04X | onsemi |
Description: IC REG BUCK PROG 5A 20WLCSPPart Status: Active Voltage - Output (Min/Fixed): 0.603V Voltage - Input (Min): 2.5V Voltage - Output (Max): 1.41V Synchronous Rectifier: Yes Supplier Device Package: 20-WLCSP (1.96x1.56) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 2.4MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 5A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 20-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FAN54013BUCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 20WLCSPPart Status: Obsolete Current - Charging: Constant - Programmable Battery Pack Voltage: 4.5V (Max) Voltage - Supply (Max): 6V Fault Protection: Over Temperature, Over Voltage, Short Circuit Programmable Features: Current, Timer, Voltage Charge Current - Max: 1.45A Supplier Device Package: 20-WLCSP (1.96x1.56) Battery Chemistry: Lithium Ion/Polymer Operating Temperature: -30°C ~ 85°C (TA) Interface: I2C, USB Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 20-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMA908PZ | onsemi |
Description: MOSFET P-CH 12V 12A 6MICROFETInput Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 23650 шт: термін постачання 21-31 дні (днів) |
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FDZ1323NZ | onsemi |
Description: MOSFET 2N-CH 20V 10A 6WLCSPPart Status: Active Supplier Device Package: 6-WLCSP (1.3x2.3) Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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FHR1200 | onsemi |
Description: TRANS NPN 100V 0.05A SC88Power - Max: 227 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: SC-88 (SC-70-6) Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN + Zener Diode (Isolated) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FOD8160R2V | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOPCurrent - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FPF1504BUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSPVoltage - Load: 1V ~ 3.6V Input Type: Non-Inverting Rds On (Typ): 15mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 4-UFBGA, WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 4-WLCSP (0.96x0.96) Ratio - Input:Output: 1:1 Current - Output (Max): 1.5A Voltage - Supply (Vcc/Vdd): Not Required |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FPF1504LUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FSA831AL10X | onsemi |
Description: IC BATT MFUNC 10MICROPAKFault Protection: Over Voltage Supplier Device Package: 10-MicroPak™ Operating Temperature: -40°C ~ 85°C (TA) Interface: USB Function: Multi-Function Controller Mounting Type: Surface Mount Package / Case: 10-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FSA832L10X | onsemi |
Description: IC BATT MFUNC 10MICROPAK |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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FSA880UMX_F106 | onsemi |
Description: IC BATT MFUNC 16UMLPPart Status: Obsolete Fault Protection: Over Voltage Supplier Device Package: 16-UMLP (1.8x2.6) Operating Temperature: -40°C ~ 85°C (TA) Interface: I²C, USB Function: Multi-Function Controller Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN3122TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 10.6A, 11.4A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 23ns, 19ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3659 шт: термін постачання 21-31 дні (днів) |
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FAN3224TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6273 шт: термін постачання 21-31 дні (днів) |
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FAN3226TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICChannel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Driven Configuration: Low-Side Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 |
на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
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FAN3227CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICRise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent |
на замовлення 2349 шт: термін постачання 21-31 дні (днів) |
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FAN3228CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Current - Peak Output (Source, Sink): 3A, 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCD620N60ZF | onsemi |
Description: MOSFET N-CH 600V 7.3A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V |
на замовлення 11800 шт: термін постачання 21-31 дні (днів) |
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FCD900N60Z | onsemi |
Description: MOSFET N-CH 600V 4.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 11542 шт: термін постачання 21-31 дні (днів) |
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| FDP032N08B-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 4868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.69 грн |
| 50+ | 128.48 грн |
| 100+ | 116.45 грн |
| 500+ | 89.48 грн |
| 1000+ | 83.12 грн |
| 2000+ | 79.77 грн |
| FDP045N10A-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
на замовлення 184236 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 335.54 грн |
| 50+ | 168.05 грн |
| 100+ | 153.09 грн |
| 500+ | 119.08 грн |
| 1000+ | 111.87 грн |
| FDP085N10A-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.67 грн |
| 50+ | 115.65 грн |
| 100+ | 104.63 грн |
| 500+ | 80.07 грн |
| FGH15T120SMD-F155 |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
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| FGH25T120SMD-F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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| FGH30T65UPDT-F155 |
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Виробник: onsemi
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| FGH40T120SMD |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 662.55 грн |
| 30+ | 377.51 грн |
| 120+ | 320.30 грн |
| 510+ | 275.45 грн |
| FGH40T120SMD-F155 |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
на замовлення 3121 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 663.32 грн |
| 30+ | 377.58 грн |
| 120+ | 320.35 грн |
| 510+ | 275.50 грн |
| FOD8160V |
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Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tube
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tube
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.10 грн |
| 10+ | 173.42 грн |
| 100+ | 136.99 грн |
| 500+ | 113.66 грн |
| RHRP860-F085 |
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Виробник: onsemi
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
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| FAN302HLMY-F117 |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
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| FAN3122TMX-F085 |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 23ns, 19ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 23ns, 19ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 71.83 грн |
| FAN3224CMX-F085 |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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| FAN3224TMX-F085 |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 59.88 грн |
| 5000+ | 56.41 грн |
| FAN3226TMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FAN3227CMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
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| FAN3228CMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FAN6757MRMX |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 11V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 11V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FAN6921AMLMY |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 16SOIC
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 16SOIC
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FCD620N60ZF |
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Виробник: onsemi
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
на замовлення 11800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 56.73 грн |
| 5000+ | 53.92 грн |
| FCD900N60Z |
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Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.01 грн |
| 5000+ | 43.50 грн |
| FDB8132_F085 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V
Qualification: AEC-Q101
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| FDD120AN15A0-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 14A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 14A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
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| FDD1600N10ALZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 6.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 6.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.44 грн |
| 5000+ | 24.52 грн |
| FDMC0310AS-F127 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 21A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.80 грн |
| 6000+ | 22.70 грн |
| FDMF6824A |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 107.89 грн |
| FDMS037N08B |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 75V 100A 8PQFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 100A 8PQFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 80.54 грн |
| FDMS3660AS |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| FDMS3660S-F121 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
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| FDMS86202 |
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Виробник: onsemi
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| FDMS86550 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 216.50 грн |
| FDPC4044 |
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Виробник: onsemi
Description: MOSFET 2N-CH POWERCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Obsolete
Description: MOSFET 2N-CH POWERCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Obsolete
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| FDT1600N10ALZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
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Мінімальне замовлення: 4000 шт
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| FGD3040G2-F085 |
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Виробник: onsemi
Description: IGBT 400V 41A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 41A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 44.96 грн |
| FGD3440G2-F085 |
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Виробник: onsemi
Description: IGBT 400V 26.9A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/5.3µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 26.9A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/5.3µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 2500 шт
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| FODM8801AR2V |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 45.63 грн |
| FODM8801BR2V |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 210000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 42.44 грн |
| 5000+ | 39.14 грн |
| 7500+ | 38.25 грн |
| 12500+ | 34.96 грн |
| FQD9N25TM-F085 |
Виробник: onsemi
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 2500 шт
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| ISL9V5045S3ST-F085 |
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Виробник: onsemi
Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 146.69 грн |
| RURD4120S9A-F085 |
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Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 4A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 1.2KV 4A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.30 грн |
| RURD660S9A-F085 |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Description: DIODE GEN PURP 600V 6A TO252AA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| FAN48630UC50X |
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Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 5V, 5.29V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Description: IC REG BOOST PROG 1.5A 16WLCSP
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 5V, 5.29V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
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| FAN53555UC04X |
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Виробник: onsemi
Description: IC REG BUCK PROG 5A 20WLCSP
Part Status: Active
Voltage - Output (Min/Fixed): 0.603V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 1.41V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG BUCK PROG 5A 20WLCSP
Part Status: Active
Voltage - Output (Min/Fixed): 0.603V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 1.41V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FAN54013BUCX |
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Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Part Status: Obsolete
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 6V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.45A
Supplier Device Package: 20-WLCSP (1.96x1.56)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Part Status: Obsolete
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 6V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.45A
Supplier Device Package: 20-WLCSP (1.96x1.56)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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| FDMA908PZ |
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Виробник: onsemi
Description: MOSFET P-CH 12V 12A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 12A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 23650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.85 грн |
| 6000+ | 21.26 грн |
| 9000+ | 20.40 грн |
| 15000+ | 18.56 грн |
| FDZ1323NZ |
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Виробник: onsemi
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.3x2.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.3x2.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 39.62 грн |
| FHR1200 |
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Виробник: onsemi
Description: TRANS NPN 100V 0.05A SC88
Power - Max: 227 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SC-88 (SC-70-6)
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN + Zener Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TRANS NPN 100V 0.05A SC88
Power - Max: 227 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SC-88 (SC-70-6)
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN + Zener Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| FOD8160R2V |
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Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 119.38 грн |
| 2000+ | 110.50 грн |
| 3000+ | 108.28 грн |
| 5000+ | 99.30 грн |
| FPF1504BUCX |
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Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.21 грн |
| 6000+ | 12.74 грн |
| FPF1504LUCX |
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Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FSA831AL10X |
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Виробник: onsemi
Description: IC BATT MFUNC 10MICROPAK
Fault Protection: Over Voltage
Supplier Device Package: 10-MicroPak™
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC BATT MFUNC 10MICROPAK
Fault Protection: Over Voltage
Supplier Device Package: 10-MicroPak™
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 23.75 грн |
| FSA832L10X |
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Виробник: onsemi
Description: IC BATT MFUNC 10MICROPAK
Description: IC BATT MFUNC 10MICROPAK
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FSA880UMX_F106 |
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Виробник: onsemi
Description: IC BATT MFUNC 16UMLP
Part Status: Obsolete
Fault Protection: Over Voltage
Supplier Device Package: 16-UMLP (1.8x2.6)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I²C, USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Description: IC BATT MFUNC 16UMLP
Part Status: Obsolete
Fault Protection: Over Voltage
Supplier Device Package: 16-UMLP (1.8x2.6)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I²C, USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
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од. на суму грн.
| FAN3122TMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 23ns, 19ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 23ns, 19ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3659 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.21 грн |
| 10+ | 109.92 грн |
| 25+ | 100.29 грн |
| 100+ | 84.19 грн |
| 250+ | 79.46 грн |
| 500+ | 76.61 грн |
| 1000+ | 73.04 грн |
| FAN3224TMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6273 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.56 грн |
| 10+ | 84.02 грн |
| 25+ | 76.44 грн |
| 100+ | 63.92 грн |
| 250+ | 60.18 грн |
| 500+ | 57.93 грн |
| 1000+ | 55.15 грн |
| FAN3226TMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Driven Configuration: Low-Side
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Description: IC GATE DRVR LOW-SIDE 8SOIC
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Driven Configuration: Low-Side
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.00 грн |
| 10+ | 107.90 грн |
| 25+ | 91.13 грн |
| 100+ | 67.74 грн |
| 250+ | 59.01 грн |
| 500+ | 53.64 грн |
| 1000+ | 48.33 грн |
| FAN3227CMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Description: IC GATE DRVR LOW-SIDE 8SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.29 грн |
| 10+ | 173.79 грн |
| 25+ | 148.53 грн |
| 100+ | 112.51 грн |
| 250+ | 99.32 грн |
| 500+ | 91.21 грн |
| 1000+ | 83.03 грн |
| FAN3228CMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 3A, 3A
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 3A, 3A
товару немає в наявності
В кошику
од. на суму грн.
| FCD620N60ZF |
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Виробник: onsemi
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
на замовлення 11800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.48 грн |
| 10+ | 125.66 грн |
| 100+ | 86.43 грн |
| 500+ | 65.38 грн |
| 1000+ | 61.93 грн |
| FCD900N60Z |
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Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 11542 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.41 грн |
| 10+ | 99.39 грн |
| 100+ | 67.83 грн |
| 500+ | 50.97 грн |
| 1000+ | 49.97 грн |


































