| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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EGP20K | onsemi |
 Description: DIODE STANDARD 800V 2A DO15Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-15 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 45pF @ 4V, 1MHz |
на замовлення 7552 шт: термін постачання 21-31 дні (днів) |
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FDC645N | onsemi |
Description: MOSFET N-CH 30V 5.5A SUPERSOT6 Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 5240 шт: термін постачання 21-31 дні (днів) |
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FDS4480 | onsemi |
Description: MOSFET N-CH 40V 10.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +30V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FJV3115RMTF | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FMBM5551 | onsemi |
Description: TRANS 2NPN 160V 600MA SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 700mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SuperSOT™-6 Part Status: Active |
на замовлення 2466 шт: термін постачання 21-31 дні (днів) |
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FQB19N20TM | onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1892 шт: термін постачання 21-31 дні (днів) |
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FQB7N60TM | onsemi |
Description: MOSFET N-CH 600V 7.4A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB7P20TM | onsemi |
Description: MOSFET P-CH 200V 7.3A D2PAK |
на замовлення 1785 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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HUF76429S3ST | onsemi |
Description: MOSFET N-CH 60V 47A D2PAK |
на замовлення 2230 шт: термін постачання 21-31 дні (днів) |
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HUF76629D3ST | onsemi |
Description: MOSFET N-CH 100V 20A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V |
на замовлення 535 шт: термін постачання 21-31 дні (днів) |
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LM431BCZX | onsemi |
Description: IC VREF SHUNT ADJ 1% TO92-3 Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM431BIZX | onsemi |
Description: IC VREF SHUNT ADJ 1% TO92-3 Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 45478 шт: термін постачання 21-31 дні (днів) |
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NZT560 | onsemi |
Description: TRANS NPN 60V 3A SOT223-4 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: SOT-223-4 Frequency - Transition: 75MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 273 шт: термін постачання 21-31 дні (днів) |
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NZT6714 | onsemi |
Description: TRANS NPN 30V 2A SOT223-3 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: SOT-223-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZT753 | onsemi |
Description: TRANS PNP 100V 4A SOT223-4 |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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QSD124A4R0 | onsemi |
Description: SENSOR PHOTO 880NM TOP VIEW RAD Packaging: Cut Tape (CT) Package / Case: Radial, 5mm Dia (T 1 3/4) Wavelength: 880nm Mounting Type: Through Hole Orientation: Top View Operating Temperature: -40°C ~ 100°C Viewing Angle: 24° Current - Dark (Id) (Max): 100 nA Part Status: Active Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 100 mW |
на замовлення 40260 шт: термін постачання 21-31 дні (днів) |
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FAN7080MX-GF085 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 40ns, 25ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 300mA, 600mA Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 361 шт: термін постачання 21-31 дні (днів) |
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FAN7621BSJX | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOP Power (Watts): 192 W Part Status: Active Control Features: Frequency Control Voltage - Start Up: 12.5 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: 16-SOP Voltage - Supply (Vcc/Vdd): 10V ~ 25V Topology: Half-Bridge Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: Up to 300kHz Duty Cycle: 50% Operating Temperature: -40°C ~ 130°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD7N60TM-WS | onsemi |
Description: MOSFET N-CH 600V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
на замовлення 1163 шт: термін постачання 21-31 дні (днів) |
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FJD3305H1TM | onsemi |
Description: TRANS NPN 400V 4A TO252AA Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Power - Max: 1.1 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-252AA |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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FQD30N06TM | onsemi |
Description: MOSFET N-CH 60V 22.7A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V |
на замовлення 4879 шт: термін постачання 21-31 дні (днів) |
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FQD3N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 2.4A DPAK Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSQ0265RLX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8LSOP Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 55kHz ~ 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-LSOP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12 V Control Features: Sync Part Status: Last Time Buy Power (Watts): 20 W |
на замовлення 462 шт: термін постачання 21-31 дні (днів) |
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RURD620CCS9A-F085 | onsemi |
Description: DIODE ARR AVAL 200V 6A TO-252AA Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-252AA Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Avalanche Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 9894 шт: термін постачання 21-31 дні (днів) |
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FAN4146SX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FJV42MTF | onsemi |
Description: TRANS NPN 350V 0.5A SOT-23-3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 16734 шт: термін постачання 21-31 дні (днів) |
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FXLA104UM12X | onsemi |
Description: IC XLTR VL BIDIR 12-UMLP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 12-UMLP (1.8x1.8) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Number of Circuits: 1 |
на замовлення 2047 шт: термін постачання 21-31 дні (днів) |
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NC7SZ04FHX | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAK2 Current - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Supplier Device Package: 6-MicroPak2™ Number of Inputs: 1 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Cut Tape (CT) |
на замовлення 2626 шт: термін постачання 21-31 дні (днів) |
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NC7SZ14FHX | onsemi |
Description: IC INVERT 1CH 1-INP 6MICROPAK2 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Input Logic Level - Low: 0.2V ~ 1.2V Input Logic Level - High: 1.4V ~ 3.6V Supplier Device Package: 6-MicroPak2™ Number of Inputs: 1 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 6-UFDFN Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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NC7WZ17FHX | onsemi |
Description: IC BUF NON-INVERT 5.5V 6MICROPK2 Part Status: Obsolete Supplier Device Package: 6-MicroPak2™ Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Input Type: Schmitt Trigger Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 6-UFDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH47N60-F085 | onsemi |
Description: MOSFET N-CH 600V 47A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 47A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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FCP104N60F | onsemi |
Description: MOSFET N-CH 600V 37A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 25 V |
на замовлення 1187 шт: термін постачання 21-31 дні (днів) |
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FGH40T65SPD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/37ns Switching Energy: 1.16mJ (on), 280µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 35 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 267 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3268TMX-F085 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: N-Channel, P-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAN48610UC50X | onsemi |
Description: IC REG BOOST 5V 1A 9WLCSP Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 4.8V Topology: Boost Supplier Device Package: 9-WLCSP (1.22x1.22) Synchronous Rectifier: Yes Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 5V Part Status: Active |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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FDMA8051L | onsemi |
Description: MOSFET N-CH 40V 10A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMA86551L | onsemi |
Description: MOSFET N-CH 60V 7.5A 6MICROFET Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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FDMC8032L | onsemi |
Description: MOSFET 2N-CH 40V 7A 8PWR33 Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 40V Power - Max: 1.9W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FDMF5820DC | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Packaging: Tape & Reel (TR) Features: Bootstrap Circuit, Latch Function, Status Flag Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 470mOhm LS, 680mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: UMOS Voltage - Load: 4.5V ~ 16V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Over Temperature, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMF5821DC | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Current - Output / Channel: 60A Applications: Synchronous Buck Converters Rds On (Typ): 470mOhm LS, 680mOhm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit, Latch Function, Status Flag Packaging: Tape & Reel (TR) Part Status: Obsolete Load Type: Inductive Fault Protection: Over Temperature, UVLO Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 4.5V ~ 16V Technology: UMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMF5823DC | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 31PQFN Packaging: Tape & Reel (TR) Features: Bootstrap Circuit, Latch Function, Status Flag Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 470mOhm LS, 680mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 55A Technology: UMOS Voltage - Load: 4.5V ~ 16V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Over Temperature, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMF5833 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 31PQFN Part Status: Obsolete Load Type: Inductive Fault Protection: Over Temperature, UVLO Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 4.5V ~ 24V Technology: UMOS Current - Output / Channel: 50A Applications: Synchronous Buck Converters Rds On (Typ): 470mOhm LS, 680mOhm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit, Latch Function, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS36101L-F085 | onsemi |
Description: MOSFET N-CH 100V 38A POWER56 Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS86252L | onsemi |
Description: MOSFET N-CH 150V 4.4A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 75 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS86255 | onsemi |
Description: MOSFET N-CH 150V 10A/45A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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FAN48610UC50X | onsemi |
Description: IC REG BOOST 5V 1A 9WLCSP Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 4.8V Topology: Boost Supplier Device Package: 9-WLCSP (1.22x1.22) Synchronous Rectifier: Yes Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 5V Part Status: Active |
на замовлення 54028 шт: термін постачання 21-31 дні (днів) |
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FDMA86551L | onsemi |
Description: MOSFET N-CH 60V 7.5A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 41265 шт: термін постачання 21-31 дні (днів) |
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FDMC8032L | onsemi |
Description: MOSFET 2N-CH 40V 7A 8PWR33 Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 40V Power - Max: 1.9W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 11970 шт: термін постачання 21-31 дні (днів) |
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FDMF5820DC | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Packaging: Cut Tape (CT) Features: Bootstrap Circuit, Latch Function, Status Flag Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 470mOhm LS, 680mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: UMOS Voltage - Load: 4.5V ~ 16V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Over Temperature, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMF5821DC | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit, Latch Function, Status Flag Packaging: Cut Tape (CT) Part Status: Obsolete Load Type: Inductive Fault Protection: Over Temperature, UVLO Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 4.5V ~ 16V Technology: UMOS Current - Output / Channel: 60A Applications: Synchronous Buck Converters Rds On (Typ): 470mOhm LS, 680mOhm HS |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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FDMF5823DC | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 31PQFN Packaging: Cut Tape (CT) Features: Bootstrap Circuit, Latch Function, Status Flag Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 470mOhm LS, 680mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 55A Technology: UMOS Voltage - Load: 4.5V ~ 16V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Over Temperature, UVLO Load Type: Inductive Part Status: Obsolete |
на замовлення 2684 шт: термін постачання 21-31 дні (днів) |
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FDMF5833 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 31PQFN Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit, Latch Function, Status Flag Packaging: Cut Tape (CT) Part Status: Obsolete Load Type: Inductive Fault Protection: Over Temperature, UVLO Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 4.5V ~ 24V Technology: UMOS Current - Output / Channel: 50A Applications: Synchronous Buck Converters Rds On (Typ): 470mOhm LS, 680mOhm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS36101L-F085 | onsemi |
Description: MOSFET N-CH 100V 38A POWER56 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS86252L | onsemi |
Description: MOSFET N-CH 150V 4.4A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 75 V |
на замовлення 3978 шт: термін постачання 21-31 дні (днів) |
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FDMS86255 | onsemi |
Description: MOSFET N-CH 150V 10A/45A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V |
на замовлення 70685 шт: термін постачання 21-31 дні (днів) |
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FAN6921AMRMY | onsemi |
Description: IC PFC CTRLR CRM 16SOP Packaging: Tape & Reel (TR) Current - Startup: 20 µA Part Status: Obsolete Supplier Device Package: 16-SOIC Mode: Critical Conduction (CRM) Voltage - Supply: 8.5V ~ 25V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7930BMX-G | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOP Current - Startup: 120 µA Part Status: Active Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM) Frequency - Switching: 250kHz ~ 350kHz Voltage - Supply: 13V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAN7930CMX-G | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOP Current - Startup: 120 µA Part Status: Active Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM) Frequency - Switching: 250kHz ~ 350kHz Voltage - Supply: 13V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FDB3632-F085 | onsemi |
Description: MOSFET N-CH 100V 12A TO263AB Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FL7930BMX-G | onsemi |
Description: IC BALLAST CNTRL 350KHZ 8SOP Type: Ballast Controller Frequency: 250kHz ~ 350kHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Current - Supply: 2.5 mA Dimming: No Supplier Device Package: 8-SOIC Voltage - Supply: 13V ~ 20V Operating Temperature: -40°C ~ 125°C |
товару немає в наявності |
В кошику од. на суму грн. |
| EGP20K |
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Виробник: onsemi
Description: DIODE STANDARD 800V 2A DO15
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Description: DIODE STANDARD 800V 2A DO15
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
на замовлення 7552 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.03 грн |
| 10+ | 45.82 грн |
| 50+ | 33.80 грн |
| 100+ | 28.08 грн |
| 500+ | 21.66 грн |
| FDC645N |
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Виробник: onsemi
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 5240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.68 грн |
| 10+ | 44.46 грн |
| 100+ | 29.14 грн |
| 500+ | 21.17 грн |
| 1000+ | 19.18 грн |
| FDS4480 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 10.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +30V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V
Description: MOSFET N-CH 40V 10.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +30V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1686 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| FJV3115RMTF |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Description: TRANS PREBIAS NPN 50V SOT23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
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В кошику
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| FMBM5551 |
|
Виробник: onsemi
Description: TRANS 2NPN 160V 600MA SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: TRANS 2NPN 160V 600MA SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SuperSOT™-6
Part Status: Active
на замовлення 2466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 12+ | 26.95 грн |
| 100+ | 17.27 грн |
| 500+ | 12.30 грн |
| 1000+ | 11.03 грн |
| FQB19N20TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 19.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.68 грн |
| 10+ | 136.47 грн |
| 100+ | 94.27 грн |
| FQB7N60TM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A D2PAK
Description: MOSFET N-CH 600V 7.4A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| FQB7P20TM |
|
Виробник: onsemi
Description: MOSFET P-CH 200V 7.3A D2PAK
Description: MOSFET P-CH 200V 7.3A D2PAK
на замовлення 1785 шт:
термін постачання 21-31 дні (днів)
| HUF76429S3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 47A D2PAK
Description: MOSFET N-CH 60V 47A D2PAK
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.66 грн |
| 10+ | 125.14 грн |
| 50+ | 95.54 грн |
| 100+ | 80.71 грн |
| HUF76629D3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
на замовлення 535 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 263.36 грн |
| 10+ | 165.83 грн |
| 100+ | 115.76 грн |
| 500+ | 88.67 грн |
| LM431BCZX |
|
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| LM431BIZX |
|
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 45478 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 37+ | 8.38 грн |
| 41+ | 7.40 грн |
| 100+ | 5.89 грн |
| 250+ | 5.41 грн |
| 500+ | 5.11 грн |
| 1000+ | 4.78 грн |
| NZT560 |
|
Виробник: onsemi
Description: TRANS NPN 60V 3A SOT223-4
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-223-4
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 60V 3A SOT223-4
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-223-4
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.89 грн |
| 10+ | 36.00 грн |
| 100+ | 25.01 грн |
| NZT6714 |
|
Виробник: onsemi
Description: TRANS NPN 30V 2A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-223-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 2A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-223-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-3
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| NZT753 |
|
Виробник: onsemi
Description: TRANS PNP 100V 4A SOT223-4
Description: TRANS PNP 100V 4A SOT223-4
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.76 грн |
| 10+ | 59.18 грн |
| 100+ | 45.35 грн |
| QSD124A4R0 |
|
Виробник: onsemi
Description: SENSOR PHOTO 880NM TOP VIEW RAD
Packaging: Cut Tape (CT)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Orientation: Top View
Operating Temperature: -40°C ~ 100°C
Viewing Angle: 24°
Current - Dark (Id) (Max): 100 nA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
Description: SENSOR PHOTO 880NM TOP VIEW RAD
Packaging: Cut Tape (CT)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Orientation: Top View
Operating Temperature: -40°C ~ 100°C
Viewing Angle: 24°
Current - Dark (Id) (Max): 100 nA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
на замовлення 40260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.89 грн |
| 11+ | 29.36 грн |
| 100+ | 21.30 грн |
| 500+ | 16.58 грн |
| FAN7080MX-GF085 |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 25ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 300mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 25ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 300mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 361 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.38 грн |
| 10+ | 118.05 грн |
| 25+ | 107.75 грн |
| 100+ | 90.51 грн |
| 250+ | 85.46 грн |
| FAN7621BSJX |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOP
Power (Watts): 192 W
Part Status: Active
Control Features: Frequency Control
Voltage - Start Up: 12.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC OFFLINE SW HALF-BRDG 16SOP
Power (Watts): 192 W
Part Status: Active
Control Features: Frequency Control
Voltage - Start Up: 12.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FCD7N60TM-WS |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 1163 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.58 грн |
| 10+ | 146.20 грн |
| 50+ | 112.28 грн |
| 100+ | 95.12 грн |
| 500+ | 77.15 грн |
| FJD3305H1TM |
|
Виробник: onsemi
Description: TRANS NPN 400V 4A TO252AA
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-252AA
Description: TRANS NPN 400V 4A TO252AA
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-252AA
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.22 грн |
| 10+ | 48.00 грн |
| 100+ | 33.27 грн |
| 500+ | 26.09 грн |
| 1000+ | 22.20 грн |
| FQD30N06TM |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
на замовлення 4879 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.63 грн |
| 10+ | 75.86 грн |
| 100+ | 50.77 грн |
| 500+ | 37.56 грн |
| 1000+ | 34.31 грн |
| FQD3N60CTM-WS |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A DPAK
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Description: MOSFET N-CH 600V 2.4A DPAK
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
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| FSQ0265RLX |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.46 грн |
| 10+ | 93.82 грн |
| 25+ | 85.41 грн |
| 100+ | 71.49 грн |
| 250+ | 67.36 грн |
| RURD620CCS9A-F085 |
|
Виробник: onsemi
Description: DIODE ARR AVAL 200V 6A TO-252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARR AVAL 200V 6A TO-252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 9894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.57 грн |
| 10+ | 44.15 грн |
| 100+ | 43.68 грн |
| 500+ | 32.23 грн |
| 1000+ | 29.41 грн |
| FAN4146SX |
|
Виробник: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Description: IC CTLR LOW PWR AC GFI 6-SSOT
товару немає в наявності
В кошику
од. на суму грн.
| FJV42MTF |
|
Виробник: onsemi
Description: TRANS NPN 350V 0.5A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 350V 0.5A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 16734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 28+ | 10.87 грн |
| 100+ | 6.79 грн |
| 500+ | 4.69 грн |
| 1000+ | 4.14 грн |
| FXLA104UM12X |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.8x1.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.8x1.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
на замовлення 2047 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 21.89 грн |
| 25+ | 19.53 грн |
| 100+ | 15.91 грн |
| 250+ | 14.76 грн |
| 500+ | 14.07 грн |
| 1000+ | 13.37 грн |
| NC7SZ04FHX |
|
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK2
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak2™
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Description: IC INVERTER 1CH 1-INP 6MICROPAK2
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak2™
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
на замовлення 2626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 31+ | 9.81 грн |
| 35+ | 8.70 грн |
| 100+ | 6.98 грн |
| 250+ | 6.42 грн |
| 500+ | 6.08 грн |
| 1000+ | 5.70 грн |
| 2500+ | 5.52 грн |
| NC7SZ14FHX |
|
Виробник: onsemi
Description: IC INVERT 1CH 1-INP 6MICROPAK2
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: 6-MicroPak2™
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT 1CH 1-INP 6MICROPAK2
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: 6-MicroPak2™
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.76 грн |
| 13+ | 23.62 грн |
| 25+ | 19.38 грн |
| 100+ | 13.68 грн |
| 250+ | 11.46 грн |
| 500+ | 10.10 грн |
| 1000+ | 8.82 грн |
| 2500+ | 7.61 грн |
| NC7WZ17FHX |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Part Status: Obsolete
Supplier Device Package: 6-MicroPak2™
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Part Status: Obsolete
Supplier Device Package: 6-MicroPak2™
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
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од. на суму грн.
| FCH47N60-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 47A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 47A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 450 шт
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| FCP104N60F |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 25 V
Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 25 V
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 493.02 грн |
| 10+ | 321.46 грн |
| 50+ | 255.84 грн |
| 100+ | 220.30 грн |
| 500+ | 192.01 грн |
| FGH40T65SPD-F155 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/37ns
Switching Energy: 1.16mJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 35 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/37ns
Switching Energy: 1.16mJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 35 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
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| FAN3268TMX-F085 |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 94.42 грн |
| FAN48610UC50X |
|
Виробник: onsemi
Description: IC REG BOOST 5V 1A 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 4.8V
Topology: Boost
Supplier Device Package: 9-WLCSP (1.22x1.22)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 1A 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 4.8V
Topology: Boost
Supplier Device Package: 9-WLCSP (1.22x1.22)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.35 грн |
| 6000+ | 24.76 грн |
| FDMA8051L |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 10A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 10A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 30.95 грн |
| 6000+ | 27.78 грн |
| FDMA86551L |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 7.5A 6MICROFET
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Description: MOSFET N-CH 60V 7.5A 6MICROFET
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 34.45 грн |
| 6000+ | 31.60 грн |
| 9000+ | 30.14 грн |
| FDMC8032L |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 7A 8PWR33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.9W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 7A 8PWR33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.9W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.73 грн |
| 6000+ | 29.10 грн |
| 9000+ | 27.76 грн |
| FDMF5820DC |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMF5821DC |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: UMOS
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: UMOS
товару немає в наявності
В кошику
од. на суму грн.
| FDMF5823DC |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 55A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| FDMF5833 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 24V
Technology: UMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 24V
Technology: UMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FDMS36101L-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 38A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 100V 38A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86252L |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 4.4A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 75 V
Description: MOSFET N-CH 150V 4.4A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 60.34 грн |
| FDMS86255 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 10A/45A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Description: MOSFET N-CH 150V 10A/45A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 136.29 грн |
| FAN48610UC50X |
|
Виробник: onsemi
Description: IC REG BOOST 5V 1A 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 4.8V
Topology: Boost
Supplier Device Package: 9-WLCSP (1.22x1.22)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST 5V 1A 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 4.8V
Topology: Boost
Supplier Device Package: 9-WLCSP (1.22x1.22)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
на замовлення 54028 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.79 грн |
| 10+ | 40.31 грн |
| 25+ | 36.26 грн |
| 100+ | 29.88 грн |
| 250+ | 27.91 грн |
| 500+ | 26.72 грн |
| 1000+ | 25.37 грн |
| FDMA86551L |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 7.5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 7.5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 41265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.08 грн |
| 10+ | 65.67 грн |
| 100+ | 51.05 грн |
| 500+ | 40.60 грн |
| 1000+ | 33.08 грн |
| FDMC8032L |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 7A 8PWR33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.9W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 7A 8PWR33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.9W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 11970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.81 грн |
| 10+ | 60.46 грн |
| 100+ | 47.01 грн |
| 500+ | 37.39 грн |
| 1000+ | 30.46 грн |
| FDMF5820DC |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
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| FDMF5821DC |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Cut Tape (CT)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: UMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Cut Tape (CT)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: UMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 395.83 грн |
| 10+ | 254.06 грн |
| FDMF5823DC |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 55A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Obsolete
на замовлення 2684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.23 грн |
| 10+ | 221.23 грн |
| 100+ | 157.27 грн |
| 500+ | 121.98 грн |
| 1000+ | 113.75 грн |
| FDMF5833 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Cut Tape (CT)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 24V
Technology: UMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Cut Tape (CT)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 24V
Technology: UMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
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| FDMS36101L-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 38A POWER56
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 38A POWER56
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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од. на суму грн.
| FDMS86252L |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 4.4A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 75 V
Description: MOSFET N-CH 150V 4.4A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 75 V
на замовлення 3978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.41 грн |
| 10+ | 132.77 грн |
| 100+ | 91.67 грн |
| 500+ | 69.53 грн |
| 1000+ | 66.74 грн |
| FDMS86255 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 10A/45A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Description: MOSFET N-CH 150V 10A/45A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
на замовлення 70685 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 387.20 грн |
| 10+ | 248.48 грн |
| 100+ | 177.94 грн |
| 500+ | 150.75 грн |
| FAN6921AMRMY |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM 16SOP
Packaging: Tape & Reel (TR)
Current - Startup: 20 µA
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Mode: Critical Conduction (CRM)
Voltage - Supply: 8.5V ~ 25V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Description: IC PFC CTRLR CRM 16SOP
Packaging: Tape & Reel (TR)
Current - Startup: 20 µA
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Mode: Critical Conduction (CRM)
Voltage - Supply: 8.5V ~ 25V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
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| FAN7930BMX-G |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Current - Startup: 120 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 250kHz ~ 350kHz
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Current - Startup: 120 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 250kHz ~ 350kHz
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.80 грн |
| FAN7930CMX-G |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Current - Startup: 120 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 250kHz ~ 350kHz
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Current - Startup: 120 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 250kHz ~ 350kHz
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| FDB3632-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 12A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 12A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FL7930BMX-G |
|
Виробник: onsemi
Description: IC BALLAST CNTRL 350KHZ 8SOP
Type: Ballast Controller
Frequency: 250kHz ~ 350kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply: 2.5 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Description: IC BALLAST CNTRL 350KHZ 8SOP
Type: Ballast Controller
Frequency: 250kHz ~ 350kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply: 2.5 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
товару немає в наявності
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од. на суму грн.