| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NRVBSS26T3G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBCurrent - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVHP120SFT3G | onsemi |
Description: DIODE STANDARD 200V 1A SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NRVHPD660T4G | onsemi |
Description: DIODE STANDARD 600V 6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVHPM120T3G | onsemi |
Description: DIODE GEN PURP 200V 1A POWERMITEQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Powermite Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||
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NSBC123TPDP6T5G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT963Supplier Device Package: SOT-963 Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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NSBC144WPDP6T5G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT963Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSR02F30MXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA 2X3DFNPackaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSS60100DMTTBG | onsemi |
Description: TRANS 2PNP 60V 1APart Status: Active Supplier Device Package: 6-WDFN (2x2) Frequency - Transition: 155MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 1A Power - Max: 2.27W Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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NSV40302PDR2G | onsemi |
Description: TRANS NPN/PNP 40V 3A 8SOICPackaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 3A Power - Max: 653mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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NSVBAS21M3T5G | onsemi |
Description: DIODE STANDARD 250V 200MA SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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NSVBAV99WT3G | onsemi |
Description: DIODE ARRAY GP 100V 215MA SC70-3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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NSVDAP222T1G | onsemi | Description: DIODE SW 80V DUAL SC75-3 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
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NSVDTA144EET1G | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75Resistors Included: R1 and R2 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: SC-75, SOT-416 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
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NSVJ3557SA3T1G | onsemi |
Description: JFET N-CH 15V 50MA SC59-3/CP3Qualification: AEC-Q101 Grade: Automotive Current Drain (Id) - Max: 50 mA Voltage - Breakdown (V(BR)GSS): 15 V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA Power - Max: 200 mW Drain to Source Voltage (Vdss): 15 V Supplier Device Package: SC-59-3/CP3 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NSVMMBTA05LT1G | onsemi |
Description: TRANS NPN 60V 0.5A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 225 mW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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NSVR0240P2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 200MA SOD923Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-923 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 7pF @ 1V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-923 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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NSVR1020MW2T1G | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD323Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 40 µA @ 15 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 29pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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NSVRB751S40T1G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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NSVT3904DP6T5G | onsemi |
Description: TRANS 2NPN 40V 200MA SOT-963Supplier Device Package: SOT-963 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NSVT3946DP6T5G | onsemi |
Description: TRANS NPN/PNP 40V 200MA SOT-963Supplier Device Package: SOT-963 Frequency - Transition: 200MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTMFD4C20NT1G | onsemi |
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A Drain to Source Voltage (Vdss): 30V Power - Max: 1.09W, 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTMFD4C20NT3G | onsemi |
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A Drain to Source Voltage (Vdss): 30V Power - Max: 1.09W, 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTMFS4931NT1G | onsemi |
Description: MOSFET N-CH 30V 23A/246A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTMFS4C05NT3G | onsemi |
Description: MOSFET N-CH 30V 11.9A 5DFNPackaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NTMFS4C06NAT1G | onsemi |
Description: MOSFET N-CH 30V 11A SO8FL Part Status: Obsolete Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTMFS4C10NAT1G | onsemi |
Description: MOSFET N-CH 30V 8.2A SO8FL Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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NTMFS4C13NT1G | onsemi |
Description: MOSFET N-CH 30V 7.2A/38A 5DFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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NTMFS4C13NT3G | onsemi |
Description: MOSFET N-CH 30V 7.2A/38A 5DFNPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| NTMFS4C800NT1G | onsemi | Description: MOSFET N-CH 30V 69A SO8FL |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||
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NTMFS5C612NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 235A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 235A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTR5103NT1G | onsemi |
Description: MOSFET N-CH 60V 260MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NTTFS4C05NTAG | onsemi |
Description: MOSFET N-CH 30V 12A/75A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 820mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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NTTFS4C10NTAG | onsemi |
Description: MOSFET N-CH 30V 8.2A/44A 8WDFNSupplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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NTTFS4C10NTWG | onsemi |
Description: MOSFET N-CH 30V 8.2A/44A 8WDFNVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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NVMFS5113PLT1G | onsemi |
Description: MOSFET P-CH 60V 10A/64A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4250 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C404NT3G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFNVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVMFS5C404NWFT1G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVMFS5C404NWFT3G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFNDrain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVMFS5C423NLT3G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVMFS5C423NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVMFS5C423NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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NVMFS5C670NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVMFS5C670NLWFT3G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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PCA9517ADMR2G | onsemi |
Description: IC VOLT LEVEL TRANSLATOR US8Capacitance - Input: 5 pF Part Status: Not For New Designs Supplier Device Package: 8-MSOP Current - Supply: 1mA Applications: I2C Voltage - Supply: 0.9V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Buffer, ReDriver Mounting Type: Surface Mount Number of Channels: 2 Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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RB751S40T5G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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SFT1431-TL-W | onsemi |
Description: MOSFET N-CH 35V 11A DPAK/TP-FAFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Drain to Source Voltage (Vdss): 35 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: DPAK/TP-FA Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SFT1431-W | onsemi |
Description: MOSFET N-CH 35V 11A IPAK/TPVgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Drain to Source Voltage (Vdss): 35 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: IPAK/TP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMMSZ4688T1G | onsemi |
Description: DIODE ZENER 4.7V 500MW SOD123Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Last Time Buy Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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SMMSZ4689T1G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD123 Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 5.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMMSZ4690T1G | onsemi |
Description: DIODE ZENER 5.6V 500MW SOD123 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMMSZ4698T1G | onsemi |
Description: DIODE ZENER 11V 500MW SOD123 Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Last Time Buy Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMMSZ5252BT1G | onsemi |
Description: DIODE ZENER 24V 500MW SOD123 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 18 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Last Time Buy Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 33 Ohms Voltage - Zener (Nom) (Vz): 24 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMMSZ5260BT1G | onsemi | Description: DIODE ZENER 43V 500MW SOD123 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
| STK531U36AA-E | onsemi |
Description: MODULE IPM INVERTER 3PH 29SIP Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 11 шт В кошику од. на суму грн. | |||||||||||||
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STK531U394A-E | onsemi |
Description: IC HALF BRIDGE DRIVER 15A 29SIPPackaging: Tube Features: Status Flag Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 15A Current - Peak Output: 30A Technology: IGBT Voltage - Load: 450V (Max) Supplier Device Package: 29-SIP Fault Protection: Current Limiting Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| STK531U395A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STK5F1U3C3D-E | onsemi |
Description: IC HALF BRIDGE DRIVER 15A 44DIP Interface: Logic Mounting Type: Through Hole Package / Case: 44-DIP Module, 37 Leads Features: Status Flag Packaging: Tube Current - Peak Output: 49A Current - Output / Channel: 15A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Load Type: Inductive Fault Protection: Current Limiting Supplier Device Package: 44-DIP Voltage - Load: 450V (Max) Technology: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| STK984-091B-E | onsemi |
Description: MOD INVERTER 3PHASE AUTO Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 9 шт В кошику од. на суму грн. | |||||||||||||
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SZMM3Z36VT1G | onsemi |
Description: DIODE ZENER 36V 300MW SOD323Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Grade: Automotive Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SZMM3Z3V3T1G | onsemi |
Description: DIODE ZENER 3.3V 300MW SOD323Tolerance: ±5% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NRVBSS26T3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 60V 2A SMB
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| NRVHP120SFT3G |
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Виробник: onsemi
Description: DIODE STANDARD 200V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 10.05 грн |
| 20000+ | 8.99 грн |
| NRVHPD660T4G |
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Виробник: onsemi
Description: DIODE STANDARD 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NRVHPM120T3G |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A POWERMITE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику
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| NSBC123TPDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Supplier Device Package: SOT-963
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Supplier Device Package: SOT-963
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
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| NSBC144WPDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Supplier Device Package: SOT-963
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Supplier Device Package: SOT-963
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NSR02F30MXT5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
товару немає в наявності
В кошику
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| NSS60100DMTTBG |
![]() |
Виробник: onsemi
Description: TRANS 2PNP 60V 1A
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: TRANS 2PNP 60V 1A
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NSV40302PDR2G |
![]() |
Виробник: onsemi
Description: TRANS NPN/PNP 40V 3A 8SOIC
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 3A
Power - Max: 653mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: TRANS NPN/PNP 40V 3A 8SOIC
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 3A
Power - Max: 653mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NSVBAS21M3T5G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NSVBAV99WT3G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NSVDAP222T1G |
Виробник: onsemi
Description: DIODE SW 80V DUAL SC75-3
Description: DIODE SW 80V DUAL SC75-3
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| NSVDTA144EET1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| NSVJ3557SA3T1G |
![]() |
Виробник: onsemi
Description: JFET N-CH 15V 50MA SC59-3/CP3
Qualification: AEC-Q101
Grade: Automotive
Current Drain (Id) - Max: 50 mA
Voltage - Breakdown (V(BR)GSS): 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Supplier Device Package: SC-59-3/CP3
Description: JFET N-CH 15V 50MA SC59-3/CP3
Qualification: AEC-Q101
Grade: Automotive
Current Drain (Id) - Max: 50 mA
Voltage - Breakdown (V(BR)GSS): 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Supplier Device Package: SC-59-3/CP3
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.77 грн |
| 6000+ | 11.97 грн |
| NSVMMBTA05LT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NSVR0240P2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 200MA SOD923
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA SOD923
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 1.80 грн |
| 16000+ | 1.65 грн |
| NSVR1020MW2T1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.20 грн |
| 6000+ | 5.41 грн |
| 9000+ | 5.12 грн |
| 15000+ | 4.51 грн |
| 21000+ | 4.33 грн |
| 30000+ | 4.15 грн |
| NSVRB751S40T1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NSVT3904DP6T5G |
![]() |
Виробник: onsemi
Description: TRANS 2NPN 40V 200MA SOT-963
Supplier Device Package: SOT-963
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
Description: TRANS 2NPN 40V 200MA SOT-963
Supplier Device Package: SOT-963
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NSVT3946DP6T5G |
![]() |
Виробник: onsemi
Description: TRANS NPN/PNP 40V 200MA SOT-963
Supplier Device Package: SOT-963
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
Description: TRANS NPN/PNP 40V 200MA SOT-963
Supplier Device Package: SOT-963
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
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| NTMFD4C20NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| NTMFD4C20NT3G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| NTMFS4931NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 23A/246A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 23A/246A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NTMFS4C05NT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
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| NTMFS4C06NAT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 11A SO8FL
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11A SO8FL
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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| NTMFS4C800NT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 69A SO8FL
Description: MOSFET N-CH 30V 69A SO8FL
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Мінімальне замовлення: 1500 шт
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| NTMFS5C612NLWFT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 235A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 235A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NTR5103NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 260MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Description: MOSFET N-CH 60V 260MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.03 грн |
| 6000+ | 1.85 грн |
| 9000+ | 1.74 грн |
| 15000+ | 1.58 грн |
| 21000+ | 1.53 грн |
| 30000+ | 1.49 грн |
| NTTFS4C05NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 12A/75A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 12A/75A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1500 шт
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| NTTFS4C10NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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Мінімальне замовлення: 1500 шт
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| NTTFS4C10NTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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Мінімальне замовлення: 5000 шт
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| NVMFS5113PLT1G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 77.01 грн |
| 3000+ | 72.72 грн |
| NVMFS5C404NT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
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| NVMFS5C404NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NVMFS5C404NWFT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
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| NVMFS5C423NLT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 31A/150A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NVMFS5C423NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 31A/150A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NVMFS5C423NLWFT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 31A/150A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NVMFS5C670NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NVMFS5C670NLWFT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| PCA9517ADMR2G |
![]() |
Виробник: onsemi
Description: IC VOLT LEVEL TRANSLATOR US8
Capacitance - Input: 5 pF
Part Status: Not For New Designs
Supplier Device Package: 8-MSOP
Current - Supply: 1mA
Applications: I2C
Voltage - Supply: 0.9V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Buffer, ReDriver
Mounting Type: Surface Mount
Number of Channels: 2
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC VOLT LEVEL TRANSLATOR US8
Capacitance - Input: 5 pF
Part Status: Not For New Designs
Supplier Device Package: 8-MSOP
Current - Supply: 1mA
Applications: I2C
Voltage - Supply: 0.9V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Buffer, ReDriver
Mounting Type: Surface Mount
Number of Channels: 2
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| RB751S40T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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Мінімальне замовлення: 8000 шт
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| SFT1431-TL-W |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 35V 11A DPAK/TP-FA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 35 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Description: MOSFET N-CH 35V 11A DPAK/TP-FA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 35 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
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| SFT1431-W |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 35V 11A IPAK/TP
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 35 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK/TP
Description: MOSFET N-CH 35V 11A IPAK/TP
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 35 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK/TP
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| SMMSZ4688T1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 4.7V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.79 грн |
| 6000+ | 2.39 грн |
| 9000+ | 2.25 грн |
| 15000+ | 1.95 грн |
| 21000+ | 1.86 грн |
| 30000+ | 1.77 грн |
| SMMSZ4689T1G |
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 5.1 V
Description: DIODE ZENER 5.1V 500MW SOD123
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 5.1 V
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| SMMSZ4690T1G |
Виробник: onsemi
Description: DIODE ZENER 5.6V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 5.6V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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| SMMSZ4698T1G |
Виробник: onsemi
Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SMMSZ5252BT1G |
Виробник: onsemi
Description: DIODE ZENER 24V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 24V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SMMSZ5260BT1G |
Виробник: onsemi
Description: DIODE ZENER 43V 500MW SOD123
Description: DIODE ZENER 43V 500MW SOD123
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| STK531U394A-E |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 15A 29SIP
Packaging: Tube
Features: Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 15A
Current - Peak Output: 30A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 15A 29SIP
Packaging: Tube
Features: Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 15A
Current - Peak Output: 30A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting
Load Type: Inductive
товару немає в наявності
В кошику
од. на суму грн.
| STK5F1U3C3D-E |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 15A 44DIP
Interface: Logic
Mounting Type: Through Hole
Package / Case: 44-DIP Module, 37 Leads
Features: Status Flag
Packaging: Tube
Current - Peak Output: 49A
Current - Output / Channel: 15A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Load Type: Inductive
Fault Protection: Current Limiting
Supplier Device Package: 44-DIP
Voltage - Load: 450V (Max)
Technology: IGBT
Description: IC HALF BRIDGE DRIVER 15A 44DIP
Interface: Logic
Mounting Type: Through Hole
Package / Case: 44-DIP Module, 37 Leads
Features: Status Flag
Packaging: Tube
Current - Peak Output: 49A
Current - Output / Channel: 15A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Load Type: Inductive
Fault Protection: Current Limiting
Supplier Device Package: 44-DIP
Voltage - Load: 450V (Max)
Technology: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SZMM3Z36VT1G |
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Виробник: onsemi
Description: DIODE ZENER 36V 300MW SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 36V 300MW SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.91 грн |
| SZMM3Z3V3T1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 3.3V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Description: DIODE ZENER 3.3V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.14 грн |
































